CN1978191B - 一种具有多层镀膜的模具 - Google Patents

一种具有多层镀膜的模具 Download PDF

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CN1978191B
CN1978191B CN200510102017A CN200510102017A CN1978191B CN 1978191 B CN1978191 B CN 1978191B CN 200510102017 A CN200510102017 A CN 200510102017A CN 200510102017 A CN200510102017 A CN 200510102017A CN 1978191 B CN1978191 B CN 1978191B
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layer
mould
carbon
chromium
multicoating
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CN1978191A (zh
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陈杰良
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Abstract

本发明提供一种具有多层镀膜的模具，其包括一基材，以及在该基材上依次形成的一铬层或硅化铬层，一硅层，一碳化硅层，一碳化硅与碳的组合层及一含氢类金刚石碳层。本发明通过在基材上形成一铬层或硅化铬层以及一硅层，可增强后续镀层与基材的附着性；最外层选用含氢类金刚石碳材，可有效增强模具的脱膜性；另，碳化硅具有较强的硬度，中间采用一碳化硅层及一碳化硅与碳的组合层，可增强模具的耐磨性。

Description

一种具有多层镀膜的模具
【技术领域】
本发明涉及一种模具，尤其是一种具有多层镀膜的模具。
【背景技术】
随着社会发展，科技进步，人们对于模具的性能要求愈来愈高。但是，通常模具基材一般难以满足较高综合性能的要求，因此往往需采用表面处理技术在模具基材表面镀上一些修饰材料，以便于在一定程度上弥补模具基材本身的不足。
近年来，在科学技术快速发展的推动下，表面处理技术中出现了一种类金刚石碳镀层。类金刚石碳是在结构中混合了SP2石墨平面键结与SP3四面体钻石共价键结的非晶态碳。类金刚石碳中的SP2键结的石墨组织，层与层之间以微弱的范德华键键结，导致层与层间极易滑动，可使类金刚石碳镀层具有低摩擦系数与润滑等效果，具有较好的脱膜性。
由于类金刚石碳具有良好的镀层性能，在模具表面处理技术中应用较多。目前，通常采用单层纯类金刚石碳镀层来改善模具性能，而当类金刚石碳镀膜厚度太厚时，会产生较大内应力，使其与基材附着性不佳，易脱落；厚度太薄时，容易使基材元素扩散至保护膜表层，导致类金刚石碳镀膜变色而与基材发生反应，丧失其脱膜性。
有鉴于此，提供一种与基材附着性强，且脱膜性佳的镀膜模具实为必需。
【发明内容】
下面将以具体实施例说明一种与基材附着性强，且脱膜性佳的镀膜模具。
一种具有多层镀膜的模具，包括一基材，以及在该基材上依次形成的一铬层或硅化铬层，一硅层，一碳化硅层，一碳化硅与碳的组合层及一含氢类金刚石碳层。
与现有技术相比，所述具有多层镀膜的模具，通过在基材上形成一铬层或硅化铬层以及一硅层，可增强后续镀层与基材的附着性；最外层选用含氢类金刚石碳材，可有效增强模具的脱膜性；另，碳化硅具有较强的硬度，中间采用一碳化硅层及一碳化硅与碳的组合层，可增强模具的耐磨性。
【附图说明】
图1是本实施例所提供的具有多层镀膜的模具示意图。
图2是本实施例中形成该具有多层镀膜的模具的装置示意图。
【具体实施方式】
下面将结合附图对本发明实施例作进一步的详细说明。
请参见图1，一种具有多层镀膜的模具100，包括：一基材110，以及一铬层或硅化铬层120，一硅层130，一碳化硅层140，一碳化硅与碳的组合层150及一含氢类金刚石碳层160。
其中，该基材110的材质为不锈钢，如铁碳铬合金、铁碳铬钼合金、铁碳铬硅合金、铁碳铬镍钼合金、铁碳铬镍钛合金、铁碳铬钨锰合金、铁碳铬钨钒合金、铁碳铬钼钒合金或铁碳铬钼钒硅合金等。
该铬层或硅化铬层120的厚度范围为2～8纳米，优选为4～6纳米。
该硅层130的厚度范围也为2～8纳米，优选为4～6纳米。
设置该铬层或硅化铬层120的目的在于增加后续镀层与基材110的附着性。
所述碳化硅层140及碳化硅与碳的组合层150的厚度范围均为20～100纳米，优选均为40～80纳米。
所述含氢类金刚石碳层160的厚度范围为20～3000纳米，优选为100～2000纳米。
结合图2，提供一溅镀装置200，该溅镀装置200具有一密封腔室210，该密封腔室210内设置有一底座212，其可自由旋转，一基材110设置于该底座212上，其可随底座212一起旋转，亦可自转。腔室210内与该底座212相对的位置设置有一可旋转的固定装置214，其上固定有一第一靶材222，一第二靶材232以及一第三靶材242。其中，该第一靶材222的材质可选用铬或硅化铬，第二靶材232的材质可选用硅或碳化硅，第三靶材242为石墨。
射频电源224、234、244的负极分别与该第一靶材222、第二靶材232及第三靶材242连接，射频电源224、234、244的正极均连接基材110。射频电源224、234、244的工作频率均为13.56百万赫兹。一偏置电源250设置于底座212的一端，在底座212上施加一负偏压，以加速正离子向基材110的沉积速度。偏置电源250可为直流或交流电源，本实施例中采用交流电源，其频率为20～800千赫，优选为40～400千赫，其电压为-100～-30伏，优选为-60～-40伏。
由于溅镀时腔室210内需充有工作气体，工作气体通常为不与靶材、基材110以及后续形成的镀膜发生反应的惰性气体，该惰性气体可选用氩气或氪气。当然，根据待镀膜层的需要，工作气体可为上述惰性气体与其它气体的混合气体，为此，该腔室210设置有一抽气口260，一气体输入口270。
制作上述具有多层镀膜的模具100包括以下步骤：
在基材110上形成一铬层或硅化铬层120。具体步骤为：首先，从抽气口260将腔室210抽为真空后，从气体输入口270向腔室210内充入氩气或氪气，开启射频电源224，射频电源234、244均处于关闭状态，旋转固定装置214或底座212，使第一靶材222处于与基材110垂直相对的位置，在第一靶材222与作为阳极的底座212之间发生辉光放电，由于氩气分子在射频电源224作用下会被离子化为带正电荷的氩离子，在电场作用下，氩离子向负极即第一靶材222方向加速运动，并不断撞击第一靶材222的表面，氩离子的动能转移至靶材原子，当靶材原子获得足够动能后，便脱离第一靶材222的表面而沉积在基材110上形成该铬层或硅化铬层120。该溅镀过程中，基材110可进行自转，以便在基材110表面溅镀上比较均匀的铬层或硅化铬层120。该自转速度可为10～200转/分钟，优选为20～80转/分钟。且控制溅镀时间，使沉积在基材110上的铬层或硅化铬层120的厚度为2～8纳米，优选为4～6纳米。
在铬层或硅化铬层120上形成一硅层130。与形成铬层或硅化铬层120原理类似，同样使用溅镀装置200，开启射频电源234，关闭射频电源224，244处于关闭状态，旋转固定装置214或底座212，使第二靶材232处于与基材110垂直相对的位置，在第二靶材232与作为阳极的底座212之间发生辉光放电，从而在铬层或硅化铬层120上形成一硅层130，本步骤中第二靶材232的材质采用硅。该溅镀过程中，基材110可进行自转，以便在铬层或硅化铬层120表面溅镀上比较均匀的硅层130。该自转速度可为10～200转/分钟，优选为20～80转/分钟。且控制溅镀时间，使沉积在铬层或硅化铬层120上的硅层130的厚度为2～8纳米，优选为4～6纳米。
在硅层130上形成碳化硅层140。与形成硅层130原理类似，同样使用溅镀装置200，不同之处是：本步骤中第二靶材232的材质采用碳化硅。射频电源234处于开启状态，射频电源224、244均处于关闭状态，旋转固定装置214或底座212，使第二靶材232处于与基材110垂直相对的位置，在第二靶材232与作为阳极的底座212之间发生辉光放电，从而于硅层130上形成一碳化硅层140。该溅镀过程中，基材110可进行自转，以便在硅层130表面溅镀上比较均匀的碳化硅层140。该自转速度可为10～200转/分钟，优选为20～80转/分钟。且控制溅镀时间，使碳化硅层140的厚度为20～100纳米，优选为40～80纳米。
在碳化硅层140上形成一碳化硅与碳的组合层150。与形成碳化硅层140原理类似，同样使用溅镀装置200，不同之处是：本步骤采用第二靶材232及第三靶材242共同溅镀。射频电源234处于开启状态，并开启射频电源244，射频电源224处于关闭状态，即，以第二靶材232与第三靶材242作为阴极，在第二靶材232、第三靶材242与底座212之间进行辉光放电，从而在碳化硅层140上形成一碳化硅与碳的组合层150。该溅镀过程中，基材110可进行自转，以便在碳化硅层140表面溅镀上比较均匀的碳化硅与碳的组合层150。该自转速度可为10～200转/分钟，优选为20～80转/分钟。且控制溅镀时间，使该碳化硅与碳的组合层150的厚度为20～100纳米，优选为40～80纳米。
在碳化硅与碳的组合层150上形成一含氢类金刚石碳层160。与形成组合层150原理类似，同样使用溅镀装置200，不同之处是：保持腔室210内的压力条件下，从抽气口260将腔室210抽真空，再从气体输入口270向腔室210中输入一定比例的氢气与氩气的混合气体，该比例满足条件：氢气在混合气体中的体积比为5～20％。当然，也可以输入氢气与氪气的混合气体，甲烷与氩气的混合气体或甲烷与氪气的混合气体，其中，氢气与甲烷在其混合气体中所占的体积比5～20％。射频电源244处于开启状态，射频电源224处于关闭状态，将射频电源234关闭，即，以第三靶材242作为阴极，且第三靶材242处于与基材110垂直相对的位置，在第三靶材242与底座212之间进行辉光放电，从而在碳化硅与碳的组合层150上形成一含氢类金刚石碳层160。该溅镀过程中，基材110可进行自转，以便在碳化硅与碳的组合层150表面溅镀上比较均匀的含氢类金刚石碳层160。该自转速度可为10～200转/分钟，优选为20～80转/分钟。且控制溅镀时间，使该含氢类金刚石碳层160的厚度为20～3000纳米，优选为100～2000纳米。
经过上述制程，最终得到在基材110上形成有一铬层或硅化铬层120，一硅层130，一碳化硅层140，一碳化硅与碳的组合层150，以及一含氢类金刚石碳层160的具有多层镀膜的模具100。
本实施例所提供的具有多层镀膜的模具100通过在基材110上形成一铬层或硅化铬层120以及一硅层130，可增强后续镀层与基材110的附着性；最外层选用含氢类金刚石碳材，可有效增强模具100的脱膜性；另，碳化硅具有较强的硬度，中间采用一碳化硅层140及一碳化硅与碳的组合层150，可增强模具100的耐磨性。

Claims (10)

1.一种具有多层镀膜的模具，包括一基材，其特征在于，该模具还包括在该基材上依次形成的一铬层或硅化铬层，一硅层，一碳化硅层，一碳化硅与碳的组合层以及一含氢类金刚石碳层。
2.如权利要求1所述具有多层镀膜的模具，其特征在于，所述基材的材质选自铁碳铬合金、铁碳铬钼合金、铁碳铬硅合金、铁碳铬镍钼合金、铁碳铬镍钛合金、铁碳铬钨锰合金、铁碳铬钨钒合金、铁碳铬钼钒合金以及铁碳铬钼钒硅合金。
3.如权利要求1所述具有多层镀膜的模具，其特征在于，所述铬层或硅化铬层的厚度范围为2～8纳米。
4.如权利要求3所述具有多层镀膜的模具，其特征在于，所述铬层或硅化铬层的厚度范围为4～6纳米。
5.如权利要求1所述具有多层镀膜的模具，其特征在于，所述硅层的厚度范围为2～8纳米。
6.如权利要求5所述具有多层镀膜的模具，其特征在于，所述硅层的厚度范围为4～6纳米。
7.如权利要求1所述具有多层镀膜的模具，其特征在于，所述碳化硅层及碳化硅与碳的组合层的厚度范围均为20～100纳米。
8.如权利要求7所述具有多层镀膜的模具，其特征在于，所述碳化硅层及碳化硅与碳的组合层的厚度范围均为40～80纳米。
9.如权利要求1所述具有多层镀膜的模具，其特征在于，所述含氢类金刚石碳层的厚度范围为20～3000纳米。
10.如权利要求9所述具有多层镀膜的模具，其特征在于，所述含氢类金刚石碳层的厚度范围为100～2000纳米。
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