CN1975467A - Extremely micro optical lens based on micro-pore diffraction - Google Patents
Extremely micro optical lens based on micro-pore diffraction Download PDFInfo
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- CN1975467A CN1975467A CN 200610111317 CN200610111317A CN1975467A CN 1975467 A CN1975467 A CN 1975467A CN 200610111317 CN200610111317 CN 200610111317 CN 200610111317 A CN200610111317 A CN 200610111317A CN 1975467 A CN1975467 A CN 1975467A
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Abstract
A kind of very tiny optical lens and its fabrication method based on tiny pore diffraction, it relates to a kind of optical lens, especially to a kind of wavelength size very tiny optical lens and its fabrication method with focusing and collimation function. Providing a kind of very tiny optical lens and its fabrication method based on tiny pore diffraction which only has the wavelength size and it can realize the focusing and collimation function in the tiny optics field. Metal film is set up, there is at least 1 through-hole in metal film, the tie strap is set in the basal plane of the metal film, the transparent medium underlay can be set in the bottom of the metal film, or setting the transparent medium underlay interlayer between the bottom of the metal film and the tie strap. Using the photoetching method to form the photoetching reverse pattern of the hole structure in the transparent medium underlay, depositing metal film on the underlay from upwards to downwards; taking out the photolithographic glue, make the metal hole or the metal hole array on the underlay. It can realize the use that the optical lens component miniaturized, high-effect energy conversion of the component and making use of other tiny light beam to do the handling.
Description
Technical field
The present invention relates to a kind of optical lens, especially relate to a kind of have focus on and the wavelength level size of alignment function very micro optical lens and manufacture method thereof.
Background technology
Further miniaturization along with micro-optical systems, for traditional micro-optical device (as various lenticules) based on insulating medium, the influence of dwindling restriction that its size always is subjected to only having ordinary dielectric constant material and diffraction effect and low-light chamber resonance effect is (referring to document: 1.J.B.Pendry, Phys.Rev.Lett.2000,85,3966; 2.V.B.Braginsky and V.S.Ilchenko, Sov.Phys.Dokl.1987,32,36; 3.J.Kofler and N.Arnold, Phys.Rev.B 2006,73,235401).At present, the size of general micro-optical device is all at least more than tens microns, and manufacturing technology has certain degree of difficulty (referring to document: H.P. Hull Qi Ke chief editor, Zhou Haixian etc. translate, micro optical element, system and application, Beijing: National Defense Industry Press, 2002).Therefore, how can overcome theoretic limitation, produce a kind of size littler (as less than ten microns, even being less to wavelength dimension), functional, and the simple relatively device of the manufacturing technology needs that are technical development in the future.Under current micro-optical systems technology also was not very ripe situation, this invention had certain perspective to a certain extent; This invention simultaneously also provides solution or new technological approaches to the relevant issues of (as optical communication, integrated optoelectronics etc.) in other application.Coupling as luminous energy between optical fiber in the optical communication and optical fiber, optical fiber and illuminator, optical fiber and the detector, improving its coupling efficiency just needs the shape height collimation of outgoing light wave, and light-wave energy distributes and the intensity distributions (generally being close to Gaussian beam) of accepting light wave pattern in the device is complementary (referring to document: J.Palais, " Fiber Optic Communications ", FourthEdition, Prentice Hall, New Jersey, 1998).In the integrated optoelectronics, for Vertical Launch device (as LED or VCSEL) or their high density arrays, realize that its emergent light wave energy also needs the collimation of light beam or focusing (referring to document: 1.H.Martinsson in the coupling of the high-level efficiency of receiver, J.Bengtsson, M.Ghisoni, and A.Larsson, IEEE Photon.Technol.Lett.1999,11,503; 2.Yongqi Fu and Ngoi KoK Ann Bryan, IEEE Photon.Tech.Lett.2001,13,424).
Summary of the invention
The objective of the invention is to size at existing micro-optical device all at least more than tens microns, and manufacturing technology has problems such as certain degree of difficulty, provide a kind of realize to focus in the micro-optic field and (or) the very micro optical lens and the manufacture method thereof that only have the wavelength level size of alignment function based on micro-pore diffraction, with high efficiency and other purposes of utilizing microbeam to operate of energy conversion between the further miniaturization that is implemented in lens element in the micro-optical systems, device.
A kind of very micro optical lens based on micro-pore diffraction of the present invention is provided with:
Metal film, metal film are provided with at least 1 through hole, are provided with brace table in the metal film bottom surface.
A kind of very micro optical lens based on micro-pore diffraction of the present invention is provided with:
Metal film, metal film are provided with at least 1 through hole, are provided with the transparent medium substrate in the metal film bottom surface.
A kind of very micro optical lens based on micro-pore diffraction of the present invention is provided with:
Metal film, metal film are provided with at least 1 through hole, are provided with brace table in the metal film bottom surface, are provided with transparent medium substrate interlayer between metal film bottom surface and brace table.
The transparent medium substrate can be selected common any optical medium for use among the present invention, and as optical glass, quartz, silicon nitride or organic polymer etc., organic polymer generally can adopt does not have absorption or organic polymers such as the low transparent plastic that absorbs, resin to being suitable for light wave.The shape of substrate generally all is common lamellar, no specific (special) requirements.As long as its size is decided by concrete applicable cases regional greater than the useful effect of device.
Metal film among the present invention can be selected any lighttight metal material for use, and its thickness is much larger than the transmission depth of light wave in this metal.The general transmission depth of light wave in metal is tens nanometers (between 20～50 nanometers, concrete relevant with the kind of wavelength and metal).Therefore, the thickness for metal film 100～500 nanometers is a well selection.On the one hand, if too thick, have bigger difficulty on the technology; On the other hand,,, can form strong resonator cavity between the metallic walls in the hole, influence the beam shape of transmitted light for more a little bit smaller hole of diameter if too thick.
Metal film can directly be deposited on the transparent medium substrate among the present invention, as the depositing technics with metallic films such as thermal evaporation, electron beam evaporation or magnetron sputterings.As for strengthening the adhesiveness between metal film and transparent medium substrate, can be before this metal film of deposit on substrate first deposit skim (as 5～10 nanometers) metal that adhesiveness is strong (as chromium, Cr), and then deposit is used for forming the metal film of lens hole.
The size of the through hole on the metal film, shape and number decide according to the concrete needs of using.If integrated morphology (a plurality of through holes promptly being arranged respectively as optical lens), the arrangement of through hole does not have specific (special) requirements, can be periodically can be acyclic yet, is produced on any position as required; But between through hole distance (border is to the border) be preferably at least greater than one times of wavelength, to avoid influencing each other between transmitted light beam in each through hole.
Brace table there is no effect to the Core Feature of device, just plays the effect of mechanical support.Brace table only is present in outside the border of the non-active region of device.Its material is selected no any specific (special) requirements, is as the criterion with the simple consideration of related manufacturing process.As select silicon etc., make that etching technics can be than being easier to.
General brace table is the initial substrate material of device fabrication, and its selection is considered with the degree of ripeness and the simplicity of technology, is a kind of good selection as silicon.Then, with film deposition art (as electron beam evaporation, magnetron sputtering or chemical vapour deposition etc.) deposit transparent medium sandwich material on the backing material of final making brace table.Further depositing metal film on the transparent medium interlayer film is removed the brace table backing material of service area in the middle of the device with the method for etching at last, the brace table around just only being left.The thickness of transparent medium interlayer should less than half-wavelength (as in 100 nanometers between the half-wavelength of light wave).
The manufacture method of a kind of very micro optical lens based on micro-pore diffraction of the present invention the steps include:
1) on the transparent medium substrate, forms the anti-pattern of thick photoresist that to make pore texture with photoetching process;
2) depositing metal film from top to bottom on substrate;
3) remove photoresist, on substrate, be made into metal hole or metal array of apertures.
In step 1), described transparent medium substrate be organic polymers such as optical glass, quartz, resin or at certain optoelectronic device (as unit or array type surface emitting luminescent device LED, Vcsel VCSEL etc.) above-mentioned transparent medium of chip surface deposit one deck as substrate, in the case, the position of the hole of doing will be corresponding with the unit of optoelectronic device, and directly over being positioned at.The thickness of depositing metal film can be 100 nanometers to the arbitrary value between the half-wavelength.The thickness of described photoresist needs much larger than thickness of metal film, as being chosen between 1～5 micron; The step of the pattern that photoresist forms should be precipitous as far as possible, so that remove photoresist in the step 3).In step 3), sample can be immersed in the ultrasonic cleaner with removing photoresist in the organic solutions such as acetone, the metal film on the photoresist will also be stripped from simultaneously.
In step 2) in, described on substrate from top to bottom the depositing metal film can adopt good thermal evaporation of direction of deposition or electron beam evaporation process.
The present invention has tangible focusing effect according to the diffraction phenomena of hole (slit, the hole) structure that has wavelength level size (as from about 1～10 times of wavelength) on opaque plane (as metal film) and at the mesozone Zero-order diffractive.Specifically, size by adjustment apertures, the focal length that focuses on (the hole plane is to focusing on the strength of light intensity) can change between sub-wavelength to tens times wavelength, and the transverse width (promptly Jiao is wide, estimates with halfwidth) of focus (focus on light intensity strength) but can remain within several times of wavelength; Simultaneously, depth of focus (light intensity reduces by 10% distance between two points along the longitudinal direction at the focus place) also correspondingly changes between sub-wavelength to tens times wavelength with the variation of pore-size.Therefore, a kind of very micro optical lens based on micro-pore diffraction of the present invention is except that as focusing on, and when depth of focus is longer, also has alignment function (and breadth wise dimension also can be very little, within several times of wavelength).The present invention utilizes this phenomenon and rule to propose related a kind of very micro optical lens based on micro-pore diffraction.By further popularization, this very micro optical lens and function thereof not only can use in the light wave scope, be benchmark with the wavelength dimension, also go for infrared, microwave and other electromagnetic wave scope.
In general, the diffraction of hole according to the yardstick a of hole (minimum a＜＜λ, small a～λ, big a＞＞λ) position (R of (λ is a wavelength) and observation point, hole is to observation point distance) (near field region R＜＜λ, mesozone R～λ, far-field region R＞＞λ) can be divided into a variety of.What people were interested and practical usually is than the diffraction effect (as Fraunhofer diffraction, Fresnel diffraction) of macropore in the far field.Can well be similar in these regional correlation theories, its research is also relatively more thorough.And to the present invention relates to for the diffraction of micro-pore in the mesozone, research is few in theory, it is not enough that people understand its phenomenon, yet do not have to such an extent that be application before.The present invention has at first simulated under different incident light polarizations the micro gap diffraction in the light intensity pattern distribution of mesozone by finite time-domain difference numerical method, and compare with result of calculation by Rayleigh one Suo Mofei (Rayleigh-Sommerfeld) scalar formula (formula (1)), discovery is in the mesozone, and this formula can be similar to its diffraction pattern and phenomenon well.Therefore can utilize the computing formula of this formula as this designs.
To the slit:
To hole:
φ is the field intensity at the observation station place in the formula, and intensity is I=φ φ
*K=2 π/λ is a wave vector,
Be from crack, hole (seam) a bit to the position vector of observation station,
It is the unit normal vector on plane, place, crack, hole (seam).Be G for the core function that hole adopted in the formula
0=exp (ikR)/R, and to what adopted in the slit be
Then select incident light to locate field intensity under the undisturbed situation for initial field intensity φ in crack, hole (seam) (x ', 0) or φ (x ', y ', 0) at this.In fact, by discover this initial field intensity extremely short on the direction of propagation (but＜＜develop into the field strength distribution that is disturbed with regard to self according to formula (1) in λ) the distance at this place by strict analog computation gained.Therefore this formula to this very the micro optical lens design have good applicability.The relevant accompanying drawing that specific design can be done according to this formula with reference to the back.
The zone of action of the very micro optical lens structure that the present invention proposes is exactly (as for visible light and near-infrared light waves, between one to tens micron) in the diffraction mesozone, therefore be applicable to micro-optical systems, and other utilizes light beam to carry out the purposes of microoperation.And have advantages such as focused beam is narrow.On making, only need on metallic film, to make one and array type slit or hole and get final product, and its size is utilized the existing processes condition, basically without any difficulty at number of wavelengths magnitude (about one micron to ten microns).
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1.
Fig. 2 is the structural representation that the metal film in the embodiment of the invention 1 adopts the circular holes array.
Fig. 3 is preparation technology's process flow diagram of Fig. 2.
Fig. 4 is the structural representation of the embodiment of the invention 2.
Fig. 5 is the structural representation of the embodiment of the invention 3.
Fig. 6 is preparation technology's process flow diagram of Fig. 5.
Fig. 7 is for using finite time-domain method of difference (Finite-Difference Time-Domain respectively, FDTD) surface of intensity distribution of Mo Ni micro chink behind diffraction under the Different Plane ripple incident polarization condition, and with Rayleigh-Suo Mofei scalar formula calculate the diffraction intensity distribution plan.In Fig. 7, incident wavelength is λ=600 nanometers; The gap width a=λ that each row is corresponding different, (5/3) λ, 2 λ, 3 λ, 4 λ; Each row corresponding under different polarization the result of (TE or TM) and scalar formula.Following mark 0,0.5,1,1.5,2,2.5; 0,0.6,1.2,1.8; The relative intensity that has arbitrary unit among 0,0.4,0.8, the 1.2 expression different lines figure.TE: when electric field intensity is parallel with the slit with the finite time-domain method of difference calculate the result; TM: when magnetic vector is parallel with the slit with the finite time-domain method of difference calculate the result; Scalar R-S: with the result of calculation of Rayleigh-Suo Mofei scalar formula (Scalar Rayleigh-Sommerfeld formula).
When Fig. 8 calculates the diffraction field intensity for being illustrated in Rayleigh-Sommerfeld formula, suppose in the slit undisturbed incident field intensity extremely short (but＜＜just self develop into the field strength distribution that is disturbed in λ) the distance at this place by strict analog computation gained.In Fig. 8, to calculate at the wide slit of 1800 nanometers, incident wavelength is 600 nanometers.X axle: along Width (the coordinate figure unit: micron) in slit; Y axle: along normal direction (the coordinate figure unit: micron) of the metal film at place, slit; The z axle: expression diffraction light wave intensity (Intensity) size (relative value with arbitrary unit, a.u.).
Fig. 9 for calculate with Rayleigh-Sommerfeld formula the slit of different in width (representing) with a at the surface of intensity distribution of the longitudinal direction (y direction) of the medium line of the direction of propagation, Δ y is illustrated in and stitches wide depth of focus when being 5 microns.In Fig. 9, calculate at incident wavelength 600 nanometers, but can be by the proportional zoom of this gap size (and other parameter size) and wavelength to adapt to other wavelength.Among the figure, horizontal ordinate y is illustrated in by the coordinate figure of the transmitted light direction of propagation, normal upper edge of the metal film of slit mid point (unit: micron), and zero coordinate points is arranged in metal film; Ordinate a represents different gap widths (unit: micron); Among the figure the different color showing of each point this put the light wave intensity of the slit of corresponding width at the y of correspondence coordinate place, its size is corresponding to the colour code (relative size: 0,0.4,0.8,1.2) on figure the right; Intensity (a.u.) the expression light wave intensity (arbitrary unit, Arbitrary Unit) of figure top.
Figure 10 is that focal length is with the wide change curve of seam.In Figure 10, horizontal ordinate is gap width (a)/μ m, and ordinate is focal length (FL)/μ m.
Figure 11 is that focus place transverse width (FWHM) is with the wide change curve of seam.In Figure 11, horizontal ordinate is gap width (a)/μ m, and ordinate is focus place transverse width (FWHM)/μ m.FWHM is the abbreviation of Full-Width-Half-Maximum, and the meaning is the half-breadth height.
Figure 12 for calculate with Rayleigh-Sommerfeld formula length and width be that 1.8 microns square opening is a diffracted intensity three-dimensional distribution map under the 600 nanometer plane wave incidents at wavelength.In Figure 12, the little figure of top-right insertion is illustrated in the surface of intensity distribution in the focus place xsect vertical with the forward-propagating direction.Among the figure, x axle and y axle are represented along the mutually perpendicular length of side direction of square opening; The normal direction of the metal film at z axle indication window place, and its forward is along optical propagation direction.The null position of x, y, z axial coordinate value is corresponding to the mid point in hole, and coordinate figure unit is micron.
Figure 13 for calculate with Rayleigh-Sommerfeld formula diameter be that 1.8 microns circular port is a diffracted intensity three-dimensional distribution map under the 600 nanometer plane wave incidents at wavelength.In Figure 13, the little figure of top-right insertion is illustrated in the surface of intensity distribution in the focus place xsect vertical with the forward-propagating direction.Among the figure, x axle and y axle are represented along mutually perpendicular two diametric(al)s of circular port; The normal direction of the metal film at z axle indication window place, and its forward is along optical propagation direction.The null position of x, y, z axial coordinate value is corresponding to the mid point in hole, and coordinate figure unit is micron.
Embodiment
Following examples will the present invention is further illustrated in conjunction with the accompanying drawings.
Referring to Fig. 1, a kind of very micro optical lens based on micro-pore diffraction of embodiment 1 is provided with metal film 11, and metal film 11 is provided with 1 circular holes 111, is provided with brace table 13 in the bottom surface of metal film 11.Metal film 11 can be any lighttight metal material, its thickness should much larger than the transmission depth of light wave in this metal (as select its thickness in 100 nanometers between the half-wavelength).The diameter of circular holes 111 designs (described in concrete enforcement) as required.Brace table 13 is preferably selected easy etch material (as silicon etc.), and it only is present in the outside of device service area, and zone line will be etched away in technology, and its thickness can be determined according to concrete needs.
The embodiment that Fig. 2 provides is similar to Example 1, and its difference is that metal film 11 is provided with 4 * 4 circular holes arrays 112.
Fig. 3 provides a kind of technology of preparation a kind of very micro optical lens based on micro-pore diffraction shown in Figure 2.((1b → 2b) realize specifies as follows etching after the available photoetching of former steps of this technology for 1a → 2a) or lift-off technology.
At first select suitable backing material (as silicon);
If former steps are with (its thickness can be in 100 nanometers between the half-wavelength for 1a → 2a), the metallic film (as any opaque metals such as gold, silver, aluminium, copper) of deposited by electron beam evaporation or magnetron sputtering technique deposit suitable thickness on substrate earlier then.
If former steps are with (1b → 2b), then form the anti-pattern of photoresist of the pore texture that will do earlier with the method for photoetching on substrate, its thickness should be much larger than the thickness (as 1～5 micron) of metal film of the hole of doing in future, so that remove photoresist in the back.The step of the pattern that photoresist forms should be precipitous as far as possible.
Step (1a): on metallic film, form the photoresist pattern that to do pore texture with photoetching process.Photoresist is as the mask of etching among the step 2a, and its thickness should be enough thick in can carve following metallic film, and concrete thickness designs, proofreaies and correct according to used process equipment and condition.
Step (2a): utilize remaining photoresist after the 1a photoetching as the metallic film below the mask etching, and carve saturating.This technology preferably adopts the good dry etching of etching homogeneity (as plasma etching, reactive ion etching etc.), and not easy-to-use wet etching is so that accurately control the size of metallic film mesoporosity.
Step (1b): the photoresist top from top to down depositing metal film that forms the anti-pattern of pore texture in front with photoetching process.Metallic film material and thickness are selected and step (identical among the 1a → 2a).In the method, the depositing technics of metallic film easily adopts the good method of direction of deposition, as thermal evaporation or electron beam evaporation, so that the side of photoresist step is not covered by metal, is beneficial to and removes photoresist.
Step (2b): remove photoresist.Soak sample to remove photoresist with acetone or other organic solution, the metallic film of photoresist top covering simultaneously also will be stripped from simultaneously.This technology can be carried out in ultrasonic cleaner, removes photoresist being more conducive to.
Through step recited above (1a → 2a) or (1b → 2b), finished in the metallic film on substrate and formed pore texture.Following step is to be service area (array of apertures zone) backing material in the middle of removing, and the backing material of retaining periphery is to make stilt.Have the metallic film of pore texture at this for protection in the technology in the back, can on metallic film, be coated with one deck photoresist with the rotation photoresist spinner equably, at last after following all technologies, sample is immersed in the removal photoresist gets final product in the acetone.
Step (3): sample is turned upside down, have the pattern of photoresist with the method for photoetching in the formation of the outside in array of apertures zone.Lithographic accuracy is less demanding in this technology, and photoresist can thick as far as possible (as 2～5 microns).
Step (4): the method with chemical corrosion (is used the acid solution of corrosion silicon, as HNO
3: HF=5: 1) with the photoresist be the backing material of hole array area in the middle of mask erodes.Removing photoresist with acetone again gets final product.
In addition, also can form skim oxide layer (silicon dioxide is as 500 nanometer thickness) earlier with thermal oxidation technology at the initial back side with backing material silicon.So just can be the silicon dioxide layer etching is saturating as mask with photoresist earlier in processing step (4) with the method for chemical corrosion or dry etching, come to remove the backing material of middle hole array area again with chemical corrosion method as mask with the remaining silica layer.This purpose is in order to improve etching ratio to backing material with silicon dioxide layer as mask; On the other hand, corrode silicon as mask, can select alkaline solution, as the KOH solution of dilution with silicon dioxide.Last silicon dioxide layer can keep also and can go with the hydrofluorite corrosion.
Referring to Fig. 4, a kind of very micro optical lens based on micro-pore diffraction of embodiment 2 is provided with metal film 21, and metal film 21 is provided with 4 * 4 circular holes arrays 211, is provided with transparent medium substrate 22 in the bottom surface of metal film 21.Metal film 21 can be any lighttight metal material, its thickness should much larger than the transmission depth of light wave in this metal (as select its thickness in 100 nanometers between the half-wavelength).The diameter of circular holes 211 designs (described in concrete enforcement) as required.Dielectric substrate 23 can be selected as transparent materials such as optical glass, quartz, organic polymers, and its thickness can be determined according to concrete needs.
Referring to Fig. 5, a kind of very micro optical lens based on micro-pore diffraction of embodiment 3 is provided with metal film 31, metal film 31 is provided with 4 * 4 circular holes arrays 311, be provided with brace table 33 in the bottom surface of metal film 31, between the bottom surface of metal film 31 and brace table 33, be provided with transparent medium substrate interlayer 32.Metal film 31 can be any lighttight metal material, its thickness should much larger than the transmission depth of light wave in this metal (as select its thickness in 100 nanometers between the half-wavelength).The diameter of circular holes 311 designs (described in concrete enforcement) as required.Transparent medium substrate interlayer 32 can be selected as transparent materials such as silicon dioxide or silicon nitrides, and its thickness should be in 100 nanometers between the half-wavelength.Brace table 33 materials are selected no specific (special) requirements, with the consideration that is as the criterion of the complexity of technology, as selection silicon.
Fig. 6 provides a kind of technology of preparation a kind of very micro optical lens based on micro-pore diffraction shown in Figure 5.For the dielectric interlayer 32 in the middle of the structure among the embodiment 3 can be continuous (shown in step among Fig. 6 (2a) back), also can be with the metal film 31 the same through holes (shown in step among Fig. 6 (2b) back) that also form accordingly at hole 311 places.
For two kinds of structures (continuity dielectric interlayer structure, through hole dielectric interlayer structure), we at first will produce as the preceding structure of step (1a): as the transparent dielectric material of top deposit one layer interlayer 32 of brace table 33 backing materials (thickness in 100 nanometers between the half-wavelength), on dielectric interlayer 32, use photoetching-lithographic method (as Fig. 3 again, (as Fig. 3,1b → 2b) forms the pore texture 311 on the metal film 31 for 1a → 2a) or Lift-off method.Respectively the concrete steps of postchannel process are described below:
The technology of continuity dielectric interlayer structure:
Step (1a): sample is turned upside down, have the pattern of photoresist with the method for photoetching in the formation of the outside in array of apertures zone.Lithographic accuracy is less demanding in this technology, and photoresist can thick as far as possible (as 2～5 microns).
Step (2a): the method with chemical corrosion (is used the acid solution of corrosion silicon, as HNO
3: HF=5: 1) with the photoresist be the backing material of hole array area in the middle of mask erodes.Removing photoresist with acetone again gets final product.
The technology of through hole dielectric interlayer structure:
Step (0b): utilize metallic film to make mask and can use dry etching (plasma etching, reactive ion etching etc.) to carve dielectric interlayer 32 saturating at hole 311 places.
Step (1b): same step (1a).
Step (2b): same step (2a).
Further mention below and the combining of other optoelectronic device.
When the optical lens that needs the present invention to propose or lens arra and other surface-emitting type optoelectronic device or device array (as unit or array type surface emitting luminescent device LED, when Vcsel VCSEL etc.) needs are integrated, can be by following approach: for (embodiment 2) structure shown in Figure 4, then can (its thickness needs to determine according to concrete condition at the chip surface of optoelectronic device elder generation deposit layer of transparent medium 22,), depositing metal film 21 above transparent medium 22 again, and forming single or array of apertures 211, the hole on each metal film is aimed at the unit of a corresponding optoelectronic device; For the optical lens structure shown in Fig. 1 and 2 (embodiment 1) or Fig. 5 (embodiment 3) with stilt table top, can carry out the back in this structure and engage, be about to surface bond or bonding (the deciding) of brace table (13 or 33) and optoelectronic device chip according to concrete condition with optoelectronic device.
From Fig. 7,12 and 13 as can be seen, the optical lens structure of the present invention's proposition can be realized the beam-shaping function of beams focusing and collimation.From Fig. 9～11 as can be seen, by the size of adjustment apertures, the focal length of focusing can change between sub-wavelength to tens times wavelength, and burnt wide only remaining within several times of wavelength; Simultaneously, depth of focus also correspondingly changes between sub-wavelength to tens times wavelength with the variation of pore-size.When depth of focus is longer, be applicable to alignment function in the certain limit (and breadth wise dimension also can be very little, within several times of wavelength).
In concrete enforcement, at first by computer Simulation calculation (if any territory method of difference in limited time) or calculate to such an extent that focal length, depth of focus and the burnt wide reference shown in Fig. 9～11 schemed with the reference of pore texture size relationship with Rayleigh-Sommerfeld formula.Can calculate with following Rayleigh-Sommerfeld formula for slit and pore structure:
To the slit:
To hole:
φ is the field intensity at the observation station place in the formula, and intensity is I=φ φ
*K=2 π/λ is a wave vector,
Be from crack, hole (seam) a bit to the position vector of observation station,
It is the unit normal vector on plane, place, crack, hole (seam).Be G for the core function that hole adopted in the formula
0=exp (ikR)/R, and to what adopted in the slit be
Can select incident light to locate field intensity under the undisturbed situation for initial field intensity φ in crack, hole (seam) (x ', 0) or φ (x ', y ', 0) at this.
Then, according to reference figure can design consideration desired properties parameter the device architecture size, promptly stitch wide and pore-size.Be made into array type integrated device structure as needs, the design of can coming together.The thickness of metal film should be much larger than the transmission depth of light wave between 20～50 nanometers, and concrete numerical value is relevant with the kind of wavelength and metal, and at least less than half-wavelength.The very micro optical lens (as shown in Figure 5) based on micro-pore diffraction as described has interlayer, and thickness of interlayer also should be as much as possible much smaller than half-wavelength.
According to different needs, the present invention proposes the various very micro optical lens shown in Fig. 1,2,4 and 5 based on micro-pore diffraction.Fig. 1 and 2 is a kind of unsettled type structure (having the brace table of other material to prop up on every side); Metal film among Fig. 4 (screen) is made on certain transparent medium; Metal film among Fig. 5 (screen) is to be made on certain thin-medium interlayer, metal film and thin-medium interlayer unsettled (introducing the thin-medium interlayer herein is in order to strengthen the physical strength of unsettled metal film structures).According to the concrete device products or the applied environment of integrated system, can adopt the material of suitable structure and metal film, substrate, brace table and interlayer.
A kind of very micro optical lens based on micro-pore diffraction of the present invention also can be applied mechanically at present, and some other advanced person's micro-nano processing technology realizes, go to realize as beamwriter lithography (E-Beam Lithography), focused-ion-beam lithography (FocusedIon Beam Milling), nano impression (Nanoimprint) technology and technologies such as UV-LIGA, DEM, selectivity is very wide, can determine according to concrete use device environment.
Claims (10)
1. the very micro optical lens based on micro-pore diffraction is characterized in that being provided with metal film, and metal film is provided with at least 1 through hole, is provided with brace table in the metal film bottom surface.
2. a kind of very micro optical lens based on micro-pore diffraction as claimed in claim 1 is characterized in that described metal film is lighttight metal material, and its thickness is much larger than the transmission depth of light wave in metal.
3. the very micro optical lens based on micro-pore diffraction is characterized in that being provided with metal film, and metal film is provided with at least 1 through hole, is provided with the transparent medium substrate in the metal film bottom surface.
4. a kind of very micro optical lens as claimed in claim 3 based on micro-pore diffraction, it is characterized in that described transparent medium substrate is optical glass, quartz, silicon nitride or organic polymer, being shaped as of substrate is lamellar, and its size is greater than the useful effect zone of device.
5. a kind of very micro optical lens based on micro-pore diffraction as claimed in claim 3 is characterized in that described metal film is lighttight metal material, and its thickness is much larger than the transmission depth of light wave in metal.
6. the very micro optical lens based on micro-pore diffraction is characterized in that being provided with metal film, and metal film is provided with at least 1 through hole, is provided with brace table in the metal film bottom surface, is provided with transparent medium substrate interlayer between metal film bottom surface and brace table.
7. a kind of very micro optical lens based on micro-pore diffraction as claimed in claim 6 is characterized in that described metal film is lighttight metal material, and its thickness is much larger than the transmission depth of light wave in metal.
8. a kind of very micro optical lens as claimed in claim 6 based on micro-pore diffraction, it is characterized in that described transparent medium substrate is optical glass, quartz, silicon nitride or organic polymer, being shaped as of substrate is lamellar, and its size is greater than the useful effect zone of device.
9. the manufacture method based on the very micro optical lens of micro-pore diffraction is characterized in that the steps include:
1) on the transparent medium substrate, forms the anti-pattern of thick photoresist that to make pore texture with photoetching process;
2) depositing metal film from top to bottom on the substrate;
3) remove photoresist, on substrate, be made into metal hole or metal array of apertures.
10. the manufacture method of a kind of very micro optical lens based on micro-pore diffraction as claimed in claim 9, it is characterized in that in step 1) described transparent medium substrate is optical glass, quartz, resin, cell surface emission light-emitting device LED, array type surface emitting luminescent device LED or Vcsel VCSEL; In step 2) in, described on substrate from top to bottom the depositing metal film adopt thermal evaporation or electron beam evaporation process; In step 3), sample is immersed in the ultrasonic cleaner with removing photoresist in the organic solutions such as acetone, the metal film on the while stripping photoresist.
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| CN 200610111317 CN1975467A (en) | 2006-08-21 | 2006-08-21 | Extremely micro optical lens based on micro-pore diffraction |
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