CN1971351A - Etching composition for ito - Google Patents
Etching composition for ito Download PDFInfo
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- CN1971351A CN1971351A CNA2006101467632A CN200610146763A CN1971351A CN 1971351 A CN1971351 A CN 1971351A CN A2006101467632 A CNA2006101467632 A CN A2006101467632A CN 200610146763 A CN200610146763 A CN 200610146763A CN 1971351 A CN1971351 A CN 1971351A
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- ito
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- etching composition
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- 238000005530 etching Methods 0.000 title claims abstract description 68
- 239000000203 mixture Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000460 chlorine Substances 0.000 claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 8
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims description 4
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M potassium chloride Inorganic materials [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 2
- 229910013553 LiNO Inorganic materials 0.000 claims description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 23
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 235000006408 oxalic acid Nutrition 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006172 buffering agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
The invention provides a transparent conductive film etching composition used for selectively etching a transparent conductive film (ITO film) when manufacturing a film transistor display device without effect on a grid wiring material, which composes a TFT, i.e, a Mo/Al-Nd duplex film, and without effect on a Mo single film as a source/drain wiring material. The formed transparent conductive film has an excellent profile, can be etched with a high-speed, has an effect of saving LCD manufacturing cost and increasing process efficiency. The transparent conductive film etching composition of the invention is characterised by comprising 0.1%-5% by weight of a) chlorine containing compounds in which Cl can be separated from a water solution; 0.1%-5% by weight of b) compounds in which NO3 can be separated from a water solution; and c) residual water.
Description
Technical field
The present invention relates to etching composition for ito, more particularly, relate to following etching composition for ito, this etch combination is used for when making thin-film transistor LCD device etc. nesa coating (ITO film) being carried out optionally etching, and can be to not constituting TFT (thin film transistor (TFT), thin film transistor) grid (gate) wiring material is the Mo/Al-Nd duplex film and impacts as the single film of Mo of source/drain (source/drain) wiring material, the profile of formed nesa coating (profile) excellence, etching speed is fast, has the effect of saving the LCD manufacturing cost and improving the operation yield.
Background technology
Etching work procedure is the final process that forms fine circuits on substrate, and this process forms and the identical metal pattern of photoresist pattern (photoresist pattern) that forms by developing procedure.
Etching work procedure is divided into Wet-type etching and dry-etching substantially according to its mode, and in Wet-type etching, it corrodes to use reaction pairs such as acid (acid) class chemicals and metal, will not have being partly dissolved of photoresist pattern; In the dry-etching, quicken to remove the metal of extending part by making ion (ion), thereby form pattern.
Dry-etching is compared with Wet-type etching has following advantage: it has anisotropy (anisotropy) profile, etching control ability excellence.But, the equipment price costliness of dry-etching, and be difficult to large tracts of landization, etching speed is slow, thereby has the low problem of throughput rate (throughput).
On the contrary, Wet-type etching is compared with dry-etching and had following advantage: it can carry out a large amount of and large-scale processing, and etching speed is fast, thereby the throughput rate height, and equipment is cheap.But there are the following problems for it: the use amount of etching solution (etchant) and pure water (deionized water) is many, and waste liquid amount is many.
Usually, when carrying out dry-etching, in order to remove the partly solidified photoresist (photoresist) on surface, append plasma ashing (plasma ashing) operation, appending of this operation causes equipment price, activity time loss etc., these descend as throughput rate and the reason of product competitiveness reduction plays a role, so actual conditions are main Wet-type etchings that use in actual field.
And, owing to require more accurate fine circuits, so in Wet-type etching, in the application of employed etching solution (etchant), decide specific etching solution according to carrying out etched metal species.
As an example, the etch combination that contains oxalic acid that is used for etching aluminium and noncrystalline ITO is disclosed in following patent documentation 1.
But, the etch combination of the prior art produces residue in the manufacturing process of thin-film transistor LCD device, activity time is long and have the problem of separating out, thereby cause that operation is loaded down with trivial details, have the unfavorable problem of aspects such as throughput rate decline and expense increase.
[patent documentation 1] Republic of Korea's patented claim 2001-0030192 number
Summary of the invention
The present invention proposes in order to solve described prior art problems, its purpose is to provide a kind of nesa coating (ITO) etch combination and the manufacture method of using the liquid crystal indicator of described etch combination, described nesa coating (ITO) etch combination is when etching nesa coating (ITO), can not be the Mo/Al-Nd duplex film to the gate wirings material that constitutes TFT and impact as the single film of Mo of source/drain wiring material, can form excellent profile, etching speed is fast, can not produce the residue problem and separate out problem.
In order to achieve the above object, the invention provides a kind of etching composition for ito, it is characterized in that, contain in described nesa coating (ITO film) etch combination:
A) can in aqueous solution, dissociate Cl
-Chlorine-containing compound, this content a) is 0.1 weight %～5 weight %;
B) can in aqueous solution, dissociate NO
3 -Compound, this b) content be 0.1 weight %～5 weight %; And
C) water of surplus.
And, the invention provides the manufacture method of thin-film transistor LCD device, this method comprises utilizes described etch combination to carry out etched step.
Etching composition for ito of the present invention is the Mo/Al-Nd duplex film to the gate wirings material that constitutes TFT and impacts as the single film of Mo of source/drain wiring material at etching nesa coating (ITO) Shi Buhui, can form excellent profile, etching speed is fast, has the effect that can not produce the residue problem and separate out problem.
Description of drawings
Fig. 1 illustrates that the etch combination that utilizes the embodiment of the invention carries out etching to the single film of ITO and the photo of the profile that forms.
Fig. 2 illustrates utilization not contain can dissociate NO in aqueous solution
3 -The etch combination of compound the single film of ITO is carried out etching and the photo of the profile that forms.
Fig. 3 illustrates that the etch combination that utilizes existing etch combination promptly to contain oxalic acid carries out etching to the single film of ITO and the photo of the profile that forms.
Embodiment
Below, describe the present invention in detail.
Etching composition for ito of the present invention is characterised in that it contains: 0.1 weight %～5 weight % a) can dissociate Cl in aqueous solution
-Chlorine-containing compound; 0.1 the b of weight %～5 weight %) can in aqueous solution, dissociate NO
3 -Compound; And c) water of surplus.
Employed compound and water can use the material with the purity that can be used for semiconductor process among the present invention, can use commercially available product, also can use by the generally well-known method in this area and the material of industrial grade be made with extra care the material that gets.
Employedly among the present invention describedly a) can in aqueous solution, dissociate Cl
-Chlorine-containing compound play following effects: it regulates the etching speed of ITO, and (Indium Tin Oxide) decomposes to indium tin oxide.
The kind of described chlorine-containing compound a) is not particularly limited, and can use to be selected from by KCl, HCl, LiCl, NH
4Cl, NaCl, CuCl
2, FeCl
3, FeCl
2, CaCl
2, CoCl
2, NiCl
2, ZnCl
2, AlCl
3, BaCl
2, BeCl
2, BiCl
3, CdCl
2, CeCl
2, CsCl
2, H
2PtCl
6And CrCl
3The compound more than a kind in the group of forming preferably uses HCl or NH
4Cl.
The content of described chlorine-containing compound in etch combination of the present invention is preferably 0.1 weight %～5 weight %, more preferably 2 weight %～4 weight %.Its content can not impact grid and source/drain in described scope the time, makes indium tin oxide suitably decompose, and has the effect of accelerating etching speed, boosting productivity.
And, the described b that uses among the present invention) and can in aqueous solution, dissociate NO
3 -Compound play the effect of the buffering agent of regulating ITO residue and etching speed.
Described b) kind of compound is not particularly limited, and can use to be selected from by HNO
3, NH
4NO
3, KNO
3, NaNO
3, Fe (NO
3)
3, Ca (NO
3)
2, Cr (NO
3)
2, LiNO
3And Zn (NO
3)
2The compound more than a kind in the group of forming preferably uses HNO
3Or NH
4NO
3
Described b) content of compound in etch combination of the present invention is preferably 0.1 weight %～5 weight %, more preferably 0.5 weight %～3 weight %.Its content can effectively be regulated ITO residue and etching speed in described scope the time; What mention especially is, if its content is greater than 5 weight %, the problem that then exists etching speed to slow down.
In addition, etch combination of the present invention contains c) water of surplus, described water preferably uses ultrapure water.
The present invention also provides the manufacture method of thin-film transistor LCD device, and this method comprises utilizes the etch combination that contains described composition to carry out etched step.In the manufacture method of thin-film transistor LCD device of the present invention, use described etch combination carry out etched etching work procedure before and afterwards, certainly be applied in applied conventional operation in the manufacture method of thin-film transistor LCD device.
In the manufacture method of thin-film transistor LCD device of the present invention, the etch combination of the present invention that contains described composition in use is to the nesa coating (ITO film) of the TFT that constitutes thin-film transistor LCD device when carrying out etching, can be to not impacting as the Mo/Al-Nd duplex film of gate wirings material with as the single film of Mo of source/drain wiring material, can form the profile of excellent nesa coating, have the effect of saving the LCD manufacturing cost and improving the operation yield.
Below, describe embodiments of the invention in detail.Described embodiment is used for the present invention is further described in detail, and the present invention is not limited by these embodiment.
[embodiment]
Embodiment 1
With the hydrochloric acid (HCl) of 3.0 weight % and the ammonium nitrate (NH of 1.0 weight %
4NO
3) add in the water of surplus, make etching composition for ito.
Use described etch combination, in 40 ℃ with EPD (end point detect, the endpoint monitoring etching), 30% etching (Over Etch, O/E) excessively, 60% mistake etching are sprayed to ITO film (thickness of ITO film is 500 ) substrate, carry out after the etching, utilize ultrapure water to wash about 1 minute, then with nitrogen (Quality element) carry out drying.
Finish after the etching like this, utilize scanning electron microscope (Hitachi S-4200) that substrate surface is observed, the result crosses under the etching and does not confirm residue in EPD, 30% etching excessively, 60% as shown in Figure 1, and grid (Mo/Al-Nd) and source/drain (Mo) film are not seen damage.
Comparative example 1
The hydrochloric acid (HCl) of 3.0 weight % is added in the water of surplus, make etch combination.Use described etch combination, cross etching in 40 ℃ with EPD, 30% etching excessively, 60% and spray, carry out after the etching, utilize ultrapure water to wash about 1 minute, carry out drying with nitrogen then to ITO film (thickness of ITO film is 500 ) substrate.
Finish like this to utilize scanning electron microscope (Hitachi S-4200) that substrate surface is observed after the etching, the result produces residue as shown in Figure 2 in EPD, crosses in the etching in 30% etching excessively, 60% and does not confirm residue.And grid (Mo/Al-Nd) and source/drain (Mo) film be damage not.
Comparative example 2
The oxalic acid of 4.5 weight % is added in the water of surplus, make etch combination.Use described etch combination, cross etching in 40 ℃ with EPD, 30% etching excessively, 60% and spray, carry out after the etching, utilize ultrapure water to wash about 1 minute, carry out drying with nitrogen then to ITO film (thickness of ITO film is 500 ) substrate.
Finish like this to utilize scanning electron microscope (Hitachi S-4200) that substrate surface is observed after the etching, the result produces residue as shown in Figure 3 in EPD, crosses in the etching in 30% etching excessively, 60% and does not confirm residue.And grid (Mo/Al-Nd) and source/drain (Mo) film be damage not.But when being to use oxalic acid to carry out etching, activity time is longer, produces the problem of separating out.
The formation and the etching result of described embodiment 1 and comparative example are put in order in following table 1.
[table 1]
| Classification | Embodiment | Comparative example | |
| 1 | 1 | 2 | |
| Cl - | 3 weight % | 3 weight % | 0 |
| NO 3 - | 1 weight % | 0 | 0 |
| Oxalic acid | 0 | 0 | 4.5 weight % |
| Water | To 100 weight % | ||
| EPD(sec) | 30 | 35 | 50 |
| ITO residue (30% O/E) | ◎ | ○ | △ |
| Al Attack(10min) | × | × | × |
| ITO residue: ◎ is very good, zero good, the common Al Attack of △: under the Dip state after the test 10 minutes, confirm with SEM | |||
Claims (4)
1. an etching composition for ito is characterized in that, contains in the described etching composition for ito:
A) can in aqueous solution, dissociate Cl
-Chlorine-containing compound, this content a) is 0.1 weight %～5 weight %;
B) can in aqueous solution, dissociate NO
3 -Compound, this b) content be 0.1 weight %～5 weight %; And
C) water of surplus.
2. etching composition for ito as claimed in claim 1 is characterized in that, and is described
A) can in aqueous solution, dissociate Cl
-Chlorine-containing compound be selected from by KCl, HCl, LiCl, NH
4Cl, NaCl, CuCl
2, FeCl
3, FeCl
2, CaCl
2, CoCl
2, NiCl
2, ZnCl
2, AlCl
3, BaCl
2, BeCl
2, BiCl
3, CdCl
2, CeCl
2, CsCl
2, H
2PtCl
6And CrCl
3At least a kind of compound in the group of forming.
3. etching composition for ito as claimed in claim 1 is characterized in that, and is described
B) can in aqueous solution, dissociate NO
3 -Compound be selected from by HNO
3, NH
4NO
3, KNO
3, NaNO
3, Fe (NO
3)
3, Ca (NO
3)
2, Cr (NO
3)
2, LiNO
3And Zn (NO
3)
2At least a kind of compound in the group of forming.
4. the manufacture method of a thin-film transistor LCD device is characterized in that, described manufacture method comprises that any described etching composition for ito that utilizes in the claim 1～3 carries out etched step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050111838A KR20070053957A (en) | 2005-11-22 | 2005-11-22 | Etching composition for ito |
| KR1020050111838 | 2005-11-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1971351A true CN1971351A (en) | 2007-05-30 |
Family
ID=38112251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101467632A Pending CN1971351A (en) | 2005-11-22 | 2006-11-22 | Etching composition for ito |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2007142409A (en) |
| KR (1) | KR20070053957A (en) |
| CN (1) | CN1971351A (en) |
| TW (1) | TW200726825A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103911157A (en) * | 2012-12-28 | 2014-07-09 | 东友精细化工有限公司 | Etchant composition for metallic oxide layer |
| CN105907396A (en) * | 2015-02-23 | 2016-08-31 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
| CN105969360A (en) * | 2015-03-12 | 2016-09-28 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate, and liquid crystal display and wire using the same |
| KR101725204B1 (en) * | 2016-01-15 | 2017-04-12 | 풍원화학(주) | Selective etchant for metal oxide |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4957584B2 (en) * | 2008-02-29 | 2012-06-20 | 東ソー株式会社 | Etching composition and etching method |
| JP6662671B2 (en) * | 2016-03-24 | 2020-03-11 | 株式会社Adeka | Etching solution composition and etching method |
-
2005
- 2005-11-22 KR KR1020050111838A patent/KR20070053957A/en not_active Application Discontinuation
-
2006
- 2006-11-13 JP JP2006307034A patent/JP2007142409A/en active Pending
- 2006-11-21 TW TW095143011A patent/TW200726825A/en unknown
- 2006-11-22 CN CNA2006101467632A patent/CN1971351A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103911157A (en) * | 2012-12-28 | 2014-07-09 | 东友精细化工有限公司 | Etchant composition for metallic oxide layer |
| CN105907396A (en) * | 2015-02-23 | 2016-08-31 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
| CN110484258A (en) * | 2015-02-23 | 2019-11-22 | 东友精细化工有限公司 | Etching agent composite for indium oxide layer |
| CN110484258B (en) * | 2015-02-23 | 2022-01-14 | 东友精细化工有限公司 | Etchant composition for indium oxide layer |
| CN105969360A (en) * | 2015-03-12 | 2016-09-28 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate, and liquid crystal display and wire using the same |
| CN105969360B (en) * | 2015-03-12 | 2019-07-12 | 东友精细化工有限公司 | Indium oxide layer etching agent composite, array substrate, its production method and conducting wire |
| KR101725204B1 (en) * | 2016-01-15 | 2017-04-12 | 풍원화학(주) | Selective etchant for metal oxide |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070053957A (en) | 2007-05-28 |
| JP2007142409A (en) | 2007-06-07 |
| TW200726825A (en) | 2007-07-16 |
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