CN105969360B - Indium oxide layer etching agent composite, array substrate, its production method and conducting wire - Google Patents
Indium oxide layer etching agent composite, array substrate, its production method and conducting wire Download PDFInfo
- Publication number
- CN105969360B CN105969360B CN201610119104.3A CN201610119104A CN105969360B CN 105969360 B CN105969360 B CN 105969360B CN 201610119104 A CN201610119104 A CN 201610119104A CN 105969360 B CN105969360 B CN 105969360B
- Authority
- CN
- China
- Prior art keywords
- layer
- indium oxide
- weight
- oxide layer
- etching agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims abstract description 117
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 71
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 70
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000002131 composite material Substances 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 28
- -1 cyclic amine compound Chemical class 0.000 claims abstract description 23
- 150000001805 chlorine compounds Chemical class 0.000 claims abstract description 20
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 16
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 12
- 239000010452 phosphate Substances 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 40
- 239000010953 base metal Substances 0.000 claims description 39
- 229910052802 copper Inorganic materials 0.000 claims description 39
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 6
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 5
- 230000008901 benefit Effects 0.000 claims description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 4
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 4
- 235000002639 sodium chloride Nutrition 0.000 claims description 4
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 3
- 229910000388 diammonium phosphate Inorganic materials 0.000 claims description 3
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 3
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 125000003831 tetrazolyl group Chemical group 0.000 claims description 3
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- 235000019838 diammonium phosphate Nutrition 0.000 claims description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 2
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 2
- 239000001103 potassium chloride Substances 0.000 claims description 2
- 235000011164 potassium chloride Nutrition 0.000 claims description 2
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 2
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 2
- 235000011151 potassium sulphates Nutrition 0.000 claims description 2
- 125000003226 pyrazolyl group Chemical group 0.000 claims description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- 125000000335 thiazolyl group Chemical group 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- 239000004254 Ammonium phosphate Substances 0.000 claims 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims 1
- 235000019289 ammonium phosphates Nutrition 0.000 claims 1
- 238000006701 autoxidation reaction Methods 0.000 claims 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims 1
- 229910000403 monosodium phosphate Inorganic materials 0.000 claims 1
- 235000019799 monosodium phosphate Nutrition 0.000 claims 1
- 239000001488 sodium phosphate Substances 0.000 claims 1
- 229910000162 sodium phosphate Inorganic materials 0.000 claims 1
- 235000011008 sodium phosphates Nutrition 0.000 claims 1
- 239000010410 layer Substances 0.000 description 248
- 229910052751 metal Inorganic materials 0.000 description 66
- 239000002184 metal Substances 0.000 description 66
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 34
- 239000011733 molybdenum Substances 0.000 description 34
- 229910052750 molybdenum Inorganic materials 0.000 description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 24
- 239000010936 titanium Substances 0.000 description 24
- 239000004411 aluminium Substances 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 20
- 229910052719 titanium Inorganic materials 0.000 description 20
- 230000008569 process Effects 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 239000002253 acid Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N nitrous oxide Inorganic materials [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910019670 (NH4)H2PO4 Inorganic materials 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000007836 KH2PO4 Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 1
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 1
- 229910000397 disodium phosphate Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- WUHLVXDDBHWHLQ-UHFFFAOYSA-N pentazole Chemical compound N=1N=NNN=1 WUHLVXDDBHWHLQ-UHFFFAOYSA-N 0.000 description 1
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Human Computer Interaction (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Weting (AREA)
Abstract
The present invention relates to the etching agent composites for indium oxide layer, and relate more specifically to include following compound the etching agent composite for indium oxide layer: nitric acid and/or nitrous acid, chlorine compound, sulfate, cyclic amine compound, phosphate and water；Method of the production for the array substrate of liquid crystal display device；Array substrate for liquid crystal display device；And conducting wire.
Description
Technical field
The present invention relates to the etching agent composite for indium oxide layer and using its production for liquid crystal display device
The method of array substrate.
Background technique
Thin film transistor (TFT) (TFT) display panel is typically used as driving liquid crystal display device, organic electroluminescent for independent
(EL) circuit substrate of each pixel in display device etc..Film transistor display panel has the scanning of transmission scanning signal
Signal conductor or grid lead and the picture signal conducting wire or data conductor for transmitting picture signal formed therein that, and film
Transistor display panel is formed with the thin film transistor (TFT) for being connected to grid lead and data conductor and is connected to thin film transistor (TFT)
Pixel electrode etc..
When making such film transistor display panel, including following procedure: it is laminated on substrate and is led for grid
The metal layer of line and data conductor and many metal patterns are formed by etching metal layer.As metal layer, in order to reduce conducting wire
Resistance and increase with the adhesiveness etc. of silicon-on-insulator, had been extensively studied the single layer being made of copper or copper alloy and such as copper or
The multilayer of the two or more layers of alloy or metal oxide etc between copper alloy/other metals, other metals.For example,
Copper/molybdenum layer or molybdenum/aluminium/molybdenum layer can form source/drain polar conductor, form the grid lead and data line of TFT-LCD, and because
This can be played a role by it in the development of large screen display.
It is formed after metal pattern, stacking is connected to the pixel electrode of thin film transistor (TFT), and implements following procedure: applying light
Cause resist and patterning.Pixel electrode layer generally uses tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide
(ITZO) and indium gallium zinc (IGZO) etc., and patterning process includes that photoresist is used to pass through as etching protecting layer
With the patterning of etchant etching.In such etching process, grid lead or picture is contacted or is exposed to pixel electrode layer
The source electrode or drain electrode of plain electrode layer may be damaged or deform during pixel electrode pattern.Therefore, in order to improve this
The problem of sample, the material of pixel electrode layer, gate electrode and source/drain electrode need different.In addition, for passing through etching
The etching agent composite for forming pixel electrode needs layer to be etched there are excellent etch capabilities and residue to resist power, together
When need that metal layer is not caused to damage, the metal layer be used as layers of copper such as described above, copper/molybdenum layer or molybdenum/aluminium/molybdenum layer it
The lower layer of class.
Korean Patent Application Publication No.10-2006-0050581 discloses the etchant including sulfuric acid, nitric acid or perchloric acid
Composition, however, it has following problems: when film includes copper instantly, film under being damaged during pixel electrode pattern
Surface.
Korean Patent Application Publication No.10-2012-0093499 is disclosed including nitric acid, sulfuric acid, ammonium compounds, cycloamination
Close the halogen-free etching agent composite of object and water.However, the etching agent composite with above-mentioned composition includes environmentally harmful
Substance such as sulfuric acid simultaneously makes wastewater treatment over-burden, this is unfavorable to environment, therefore the etching agent composite is not suitable for.
In view of the above problem, etching agent composite is required not cause damage also to hinder the metal layer that may be used as lower layer
The only loss of the conducting wire as caused by over etching, while the indium oxide layer for being used for example as pixel electrode to layer to be etched shows
Excellent etching performance out.In addition, having required through the environmentally harmful substance such as sulfuric acid of limitation using in the environment
Advantageous etching agent composite.
[existing technical literature]
[patent document]
(patent document 1) Korean Patent Application Publication No.10-2006-0050581
(patent document 2) Korean Patent Application Publication No.10-2012-0093499
Summary of the invention
In view of the above problem, it is made that the present invention, and the object of the present invention is to provide the erosions for indium oxide layer
Agent composition is carved, with excellent etch-rate and there is low metal erosion performance, the erosion remained unchanged to indium oxide layer
It carves profile and prevents over etching, change with small lateral erosion, and have by limitation mineral acid quantity and type to environment
Advantageous performance；With the method for using its to make the array substrate for liquid crystal display device.
An aspect of of the present present invention provides the etching agent composite for being used for indium oxide layer comprising: relative to composition
Total weight,
2 weight %-10 weight %'s is selected from one of nitric acid and nitrous acid or a variety of sour (A)；
The chlorine compound (B) of 0.1 weight %-5 weight %；
The sulfate (C) of 0.1 weight %-5 weight %；
The cyclic amine compound (D) of 0.1 weight %-5 weight %；
The phosphate (E) of 0.1 weight %-5 weight %；With
The water (F) of surplus.
Another aspect of the present invention provides method of the production for the array substrate of liquid crystal display device comprising:
A) grid lead is formed on substrate；
B) gate insulating layer is formed on the substrate for including the grid lead；
C) oxide semiconductor layer is formed on the gate insulating layer；
D) source electrode and drain electrode is formed on the oxide semiconductor layer；With
E) pixel electrode for being connected to the drain electrode is formed,
Wherein step e) includes the pixel electrode being formed and forming indium oxide layer on substrate and with of the invention
The etching agent composite for indium oxide layer etch the indium oxide layer.
Detailed description of the invention
The purpose of the present invention and characteristic will become obvious according to the description combination attached drawing of embodiment described below,
In:
Fig. 1 is the SEM figure that side etching distance is measured after being etched with etching agent composite；
Fig. 2 be show residue generate evaluation result SEM figure, and (a) be on the ito layer generate residue figure and
It (b) is the figure for not generating residue on the ito layer；
Fig. 3 is the SEM figure for showing the evaluation result that generation is damaged in layers of copper, and (a) is the figure for generating damage and (b) is
The figure of damage is not generated；With
Fig. 4 is the SEM figure for showing the evaluation result generated in tri- layers of Mo/Al/Mo upper damage, and (a) is to generate damage
Figure and (b) are the figures for not generating damage.
Specific embodiment
Inventor of the invention has made many effort to solve the problems, such as that etchant waste is handled, and is preventing
It improves while degree etching to the etch-rate of destination layer to be etched, and improves the protectiveness to lower metal layer, and with including
Limited amount inorganic acid and etching agent composite including chlorine compound, phosphate etc. has completed the present invention.
The present invention relates to the etching agent composites for indium oxide layer comprising: relative to the total of etching agent composite
Weight, 2 weight %-10 weight %'s is selected from one of nitric acid and nitrous acid or a variety of sour (A)；0.1 weight %-5 weight %
Chlorine compound (B)；The sulfate (C) of 0.1 weight %-5 weight %；The cyclic amine compound (D) of 0.1 weight %-5 weight %；
The phosphate (E) of 0.1 weight %-5 weight %；With the water (F) of surplus.
Indium oxide layer may include tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) or oxidation
Indium gallium zinc (IGZO), but not limited to this.
Hereinafter, description is formed to each ingredient of the etching agent composite for being used for indium oxide layer of the invention.So
And the present invention is not limited to these ingredients.
(A) one or more acid of nitric acid and nitrous acid are selected from
Nitric acid (HNO for including in the etching agent composite of indium oxide layer3) and/or nitrous acid (HNO2) it is etching
The main component of indium oxide layer, and rise prevent damage be used as indium oxide layer etching protecting layer photoresist pattern and
Minimize the effect that residue generates.
(A) one or more acid selected from nitric acid and nitrous acid are excellent relative to the total weight of etching agent composite of the invention
Choosing is included more preferably being included with 2 weight %-10 weight % with 5 weight %-10 weight %.When based on above-mentioned standard with
When including less than 2 weight %, the etching to indium oxide layer cannot be favorably accomplished, it reduce etch-rate and increases work
The skill time.In addition, it may create residue and may not exclusively be etched to some regions.Meanwhile when including being greater than 10 weights
When measuring %, etch-rate increases, however, since etching is difficult to be controlled, it may occur however that over etching.Further, since nitrogen pool
The processing of the increase of (total N) and increased liquid wastes, results in expense burden, and problem of environmental pollution becomes even worse, this
It is not preferred.
It can be according to the type of layer to be etched and the content of property suitable control nitric acid and/or nitrous acid.
(B) chlorine compound
(B) chlorine compound for including in etching agent composite for indium oxide layer of the invention passes through indium oxide layer
Displacement reaction play assisted etch agent, play and remove etch residue and started to control with above-mentioned nitric acid and/or nitrous acid one
The effect of the etch-rate of layer to be etched processed.Existing etching agent composite is by generally comprising sulfuric acid to layer to be etched with excellent
Etch-rate, but its is problematic: when with strong acid for example nitric acid is used together when, as using unfavorable to environment caused by strong acid ask
It inscribes and by damaging the over etching caused to indium oxide layer to photoresist.By excluding using sulfuric acid and including chlorine
Compound limits the content of nitric acid and/or nitrous acid simultaneously, and the etching agent composite for indium oxide layer of the invention can
It solves environmental problem and keeps etching efficiency simultaneously.
The chlorine compound for including in etching agent composite of the invention is not particularly limited, and can be used selected from hydrochloric acid
(HCl), sodium chloride (NaCl), potassium chloride (KCl), ammonium chloride (NH4One of Cl) etc. or more.
Chlorine compound is included with 0.1 weight %-5 weight % preferably with respect to the total weight of etching agent composite, more excellent
Selection of land included with 0.5 weight %-3 weight %.When chlorine compound content is less than 0.1 weight %, it is difficult to obtain aoxidizing indium
The excellent etch-rate efficiency of nitride layer, and may there is a phenomenon where residue generate and undercut.Meanwhile working as chlorine compound
When content is greater than 5 weight %, the over etching to pixel electrode occurs since etch-rate increases, pixel electrode is difficult to
Form the region for sufficiently driving.In addition, be unsuitable to include chlorine compound greater than 5 weight %, as it may occur that
The metal layer such as copper (Cu), aluminium (Al), molybdenum (Mo) or the titanium (Ti) that can be used as lower layer are caused to damage, and key needs to limit
The use of chlorine compound.
That is, the chlorine compound content met the above range be preferably as do not cause to glass substrate or under
The damage of metal layer, while preventing over etching and etch residue.
(C) sulfate (sulfate)
(C) sulfate for including in etching agent composite for indium oxide layer of the invention rises and prevents from damaging lower metal
The effect of layer such as copper, aluminium and molybdenum.That is, sulfate plays corrosion inhibitor, which prevents nitric acid and/or nitrous
The lower layer of acid and chlorine compound damage indium oxide layer.
The type of (C) sulfate is not particularly limited in the present invention, may include ammonium sulfate ((NH4)2SO4), ammonium sulfide
((NH4)2S), sodium sulphate (Na2) and potassium sulfate (K S2S) etc., and can be used selected from one such or more.
(C) sulfate is preferably with respect to the total weight of etching agent composite of the invention with 0.1 weight %-5 weight % quilt
Including more preferably being included with 0.5 weight %-3 weight %.With less than 0.1 weight % include sulfate be it is undesirable, because
The difficult effect it is expected the metal layer such as copper (Cu) for preventing corrosion to can be used as lower layer, aluminium (Al), molybdenum (Mo) and titanium (Ti).?
In this case, it is possible to reduce the amount of chlorine compound hurts metal layer to prevent stopping loss, however, this method is not suitable for, due to possible
Residue after increasing etching indium oxide layer generates rate.Meanwhile when sulfate to be included more than 5 weight %, prevent
The effect for corroding lower layer is good, however, it is possible to which the etchant by using main purpose reduces to the etching for indium oxide layer
Rate and increase the process time, and may cause residue occur defect.
(D) cyclic amine compound
(D) cyclic amine compound for including in etching agent composite for indium oxide layer of the invention rises and prevents under damage
The effect of metal layer such as copper, aluminium and molybdenum.That is, cyclic amine compound, which rises, prevents nitric acid and/or nitrous as sulfate
The effect of the lower layer of acid and chlorine compound damage indium oxide layer.
(D) type of cyclic amine compound is not particularly limited, and specific example may include pyrrolyl compound, pyrazolyl
Close object, imidazole-based compounds, triazole group compounds, tetrazolyl compounds, pentazole based compound, oxazole based compound, isoxazole
Based compound, thiazolyl compounds, isothiazolyl compound etc., and can be used selected from one such or more.It is more excellent
Selection of land may include selected from the benzotriazole as triazole group compounds and 5- Aminotetrazole, 3- as tetrazolyl compounds
One of Aminotetrazole and 5- methyl tetrazolium or more.It is highly preferred that wherein may include benzotriazole.
(D) cyclic amine compound is preferably with respect to the total weight of etching agent composite of the invention with 0.1 weight %-5 weight
Measuring % is included more preferably being included with 0.5 weight %-2 weight %.With less than 0.1 weight % include cyclic amine compound not
It is preferred that, because it is difficult to it is expected that the reduction to the metal layer such as copper (Cu), aluminium (Al), molybdenum (Mo) and titanium (Ti) that can be used as lower layer is damaged
The effect of wound.Meanwhile when including cyclic amine compound to be greater than 5 weight %, it may be reduced by using etchant to for indium
The etch-rate of oxide skin(coating) and increase the process time.
(E) phosphate
(E) phosphate for including in etching agent composite for indium oxide layer of the invention subtracts in wet etch process
Few side etching distance to film is prevented and preventing the increase of amount of the lateral etches as caused by the increase of etching period
Over etching, and play uniform etching.
The indium oxide layer for forming pixel electrode usually has the thickness less than or equal to 50nm, but according to the quick of display
Response speed and high-resolution requirement tend to be thicker to more than are equal to 100nm.With the increase of indium oxide layer thickness,
Etching period for etching this layer increases, therefore, because lateral etches and the amount longitudinally etched increase, generates over etching and asks
Topic.Accordingly, it is difficult to this layer is applied in the conducting wire for the miniaturization for being used for high-resolution.Phosphate reduces the amount of side etching,
And therefore play improvement side etching amount, that is, since the effect of lateral over etching may occur for the increase of etching period.
Phosphatic specific example may include sodium dihydrogen phosphate (NaH2PO4), disodium hydrogen phosphate (Na2HPO4), sodium phosphate
(Na3PO4), potassium dihydrogen phosphate (KH2PO4), dipotassium hydrogen phosphate (K2HPO4), ammonium dihydrogen phosphate ((NH4)H2PO4), diammonium hydrogen phosphate
((NH4)2HPO4) and ammonium phosphate ((NH4)3PO4) etc., but not limited to this, and can be used selected from the one or more of its.
(E) phosphate can be with 0.1 weight %-5 weight preferably with respect to the total weight of etching agent composite of the invention
Measuring % is included more preferably being included with 0.5 weight %-2 weight %.When phosphate content is less than 0.1 weight %, substrate
In etch uniformity decline or composition of the invention due to side etching increase and may not apply to form miniaturization
Conducting wire.When its content is greater than 5 weight %, the etch-rate of indium oxide layer is reduced and is more than or equal to 10 times, thereby increases and it is possible to
Fall short etch-rate, and the process time is therefore increased, cause the decline of process efficiency, and defect example may occur
Such as generate indium oxide layer residue.
(F) water
Etching agent composite for indium oxide layer of the invention is in addition to nitric acid and/or nitrous acid, chlorine compound, sulfuric acid
It further include (F) water except salt, cyclic amine compound and phosphate.Water is not particularly limited, it is however preferred to use deionized water and preferably
Use the water for semiconductor technology.It is highly preferred that water has the specific resistance value more than or equal to 18M Ω/cm.
Water phase can be included with surplus for 100% weight of etching agent composite.
Etching agent composite for indium oxide layer of the invention can also include selected from erosion in addition to the above ingredients
It carves in controlling agent, surfactant, metal ion chelation agent, corrosion inhibiter, pH controlling agent and other additives without being limited thereto
It is one or more.Can select and using from additive commonly used in the art to improve effect of the invention within the scope of the present invention
Fruit.
The ingredient for forming the etching agent composite for indium oxide layer of the invention preferably has for semiconductor technology
Purity grade.
The specific example for the indium oxide layer that etching agent composite for indium oxide layer of the invention etches can wrap
Include one in tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) and indium gallium zinc (IGZO) etc.
Kind is a variety of, but not limited to this.Indium oxide layer can be crystalline state or amorphous state, and in amorphous state, which can be by
Heat treatment is to crystallization and is used.
Etching agent composite for indium oxide layer of the invention does not cause to damage to the lower layer of indium oxide layer.Lower layer
Type be not particularly limited, and its specific example may include lower layer comprising copper base metal layer, molybdenum base metal layer, aluminium base gold
Belong to layer, titanium-based metal layer or the multilayer formed with them, and can more preferably be used and be applied to it.
Copper base metal layer means that layers of copper or copper alloy layer, molybdenum base metal layer mean molybdenum layer or Mo alloy, aluminium based metal layer
Mean that aluminium layer or aluminium alloy layer, titanium-based metal layer mean titanium layer or titanium alloy layer.
Multilayer includes, for example, two layers of molybdenum base metal layer/copper base metal layer, with copper base metal layer be lower layer and
Molybdenum base metal layer is upper layer；Two layers of copper base metal layer/molybdenum base metal layer is lower layer and copper-based gold with molybdenum base metal layer
Category layer is upper layer；Copper base metal layer/two layers of molybdenum-titanium-based metal layer；Three layers or more of multilayer, wherein alternately laminated copper-based
Metal layer and molybdenum base metal layer, such as molybdenum base metal layer/copper base metal layer/molybdenum base metal layer or copper base metal layer/molybdenum base metal
Layer/copper base metal layer.
In addition, multilayer includes, for example, two layers of titanium-based metal layer/copper base metal layer, it is lower layer with copper base metal layer
And titanium-based metal layer is upper layer；Two layers of copper base metal layer/titanium-based metal layer is lower layer and copper with titanium-based metal layer
Base metal layer is upper layer；Three layers or more of multilayer, wherein alternately laminated copper base metal layer and titanium-based metal layer, such as titanium-based
Metal layer/copper base metal layer/titanium-based metal layer or copper base metal layer/titanium-based metal layer/copper base metal layer.
Further, multilayer includes, for example, two layers of molybdenum base metal layer/aluminium based metal layer, it is with aluminium based metal layer
Lower layer and molybdenum base metal layer are upper layer；Two layers of aluminium based metal layer/molybdenum base metal layer, with molybdenum base metal layer be lower layer simultaneously
And aluminium based metal layer is upper layer；Three layers or more of multilayer, wherein alternately laminated titanium-based metal layer and aluminium based metal layer, such as
Titanium-based metal layer/aluminium based metal layer/titanium-based metal layer or aluminium based metal layer/titanium-based metal layer/aluminium based metal layer.
For multilayer, can diversely consider to be formed the material of the layer for being placed in top of multilayer or the layer for being placed in lower part or with it is upper
The adhesiveness of layer is stated to determine Coating combination structure.
Above-mentioned copper, molybdenum, aluminium or titanium alloy layer means that the performance according to layer has copper, molybdenum, aluminium or titanium as main component
And it is prepared as the metal layer of the alloy using other metals.For example, Mo alloy means to be formed as the layer of alloy, make with molybdenum
For main component and including selected from one of titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and indium (In) or a variety of.
Etching agent composite for indium oxide layer of the invention can be used particularly preferably in etching indium oxide layer,
The indium oxide layer has copper base metal layer, copper base metal layer/molybdenum base metal layer, titanium-based metal layer/copper base metal layer or molybdenum base
Metal layer/aluminium based metal layer/molybdenum base metal layer is as lower layer.However, the purposes of the etching agent composite for indium oxide layer
It is not limited to above-mentioned metal layer.
In addition, the present invention provides method of the production for the array substrate of liquid crystal display device comprising a) on substrate
Form grid lead；B) gate insulating layer is formed on the substrate for including the grid lead；C) on the gate insulating layer
Form oxide semiconductor layer；D) source electrode and drain electrode is formed on the oxide semiconductor layer；And it e) is formed and is connected to
The pixel electrode of the drain electrode, wherein step e) includes forming the picture and forming indium oxide layer on the substrate
Plain electrode and the indium oxide layer is etched with the etching agent composite for indium oxide layer of the invention.
Indium oxide layer may include tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) and oxidation
Indium gallium zinc (IGZO) etc., but not limited to this.
A) step may include forming metal layer on substrate and forming grid lead and etching the metal layer, d) step
It suddenly may include forming metal layer on oxide semiconductor layer and forming source electrode and drain electrode and etching the metal layer,
And a) or d) etching of metal layer can be used in addition to the etching agent composite for indium oxide layer of the invention in step
The suitable etching agent composite for metal layer in addition carries out.
Array substrate for liquid crystal display device can be thin film transistor (TFT) (TFT) array substrate.
In addition, the liquid crystal display device uses liquid crystal display the present invention is provided to the array substrate of liquid crystal display device
The manufacturing method of the array substrate of device is produced.
The present invention also provides the conducting wires for using the etching agent composite for indium oxide layer of the invention to etch.More
Body, conducting wire can be that typically in the touch sensible conducting wire that X-axis and Y axis coordinate are formed in touch screen panel (TSP).
As an example, touch screen panel can be by the way that ITO layer to be deposited on a surface of a bottom substrate
And it etches X-axis and the Y-axis conducting wire in the ITO layer and is produced.
As another example, touch screen panel can be by the way that ITO layer to be deposited on two surfaces of bottom substrate simultaneously
Each X-axis and Y-axis conducting wire in the ITO layer is etched and patterns to be produced.
The etching agent composite for indium oxide layer of the invention can be used to be etched.
Conducting wire can be indium oxide layer, and more specifically, can be selected from tin indium oxide (ITO), indium zinc oxide
(IZO), one of indium tin zinc oxide (ITZO) and indium gallium zinc (IGZO) etc. or more, but not limited to this.The indium oxygen
Compound layer can be crystalline state or amorphous state.
As described above, by using the etching agent composite for indium oxide layer of the invention, can effectively control and
Etching includes the metal oxide layer of indium, and can prevent the corrosion and damage of lower wire.In addition, of the invention is used for indium oxide layer
Etching agent composite be also used in production Organic Light Emitting Diode, touch screen, storing semiconductor display panel etc. and plate
In display such as liquid crystal display device.In addition, the composition may be also used in production, other include the metal formed with single layer
In the electronic device of oxide skin(coating) conducting wire, the metal oxide layer including indium is formed in the single layer.
Hereinafter, the present invention will be described in more detail referring to embodiment.However, following embodiment is served only for illustrating mesh
, and the scope of the present invention is not limited to following embodiment.Following embodiment can be suitably by those skilled in the art in this hair
Modifications or changes in bright range.By will determine the scope of the present invention in the technical idea for the claim being described.
<the preparation of embodiment and comparative example>etching agent composite
The etching agent composite of listed composition and content preparation embodiment 1-9 and comparative example 1-10 in following table 1.
[table 1]
<test case>
Evaluation of the test case 1. to the side etching of etching agent composite
Single a-ITO layers is deposited on glass substrate (100mm × 100mm).Later, with have be formed on rule
The sample for determining the photoresist of pattern is prepared by photoetching process.
It is etched on sample using each etching agent composite of embodiment 1-9 and comparative example 1-10.Using spraying
Etch pattern test equipment (model name: ETCHER (TFT), SEMES Co., Ltd.), and by the etching in etching process procedure
The temperature of agent composition is set as 40 DEG C, the erosion when temperature reaches 40 ± 0.1 DEG C, in the etch process of sample, for ITO layer
It carves and carries out 60 seconds.After washing and drying the layer, scanning electron microscope (SEM is used；Model name: SU-8010, by
HITACHI, Ltd. manufacture) side etching distance is investigated, as a result as shown in Table 2 below.
<side etching evaluation criterion>
◎ (excellent): less than 0.2 μm
Zero (good): greater than be equal to 0.2 μm and less than 0.5 μm
X (poor): greater than be equal to 0.5 μm
The measurement of 2. residue of test case
Single a-ITO layers is deposited on glass substrate (100mm × 100mm).Later, with have be formed on rule
The sample for determining the photoresist of pattern is prepared by photoetching process.
The etching agent composite of embodiment 1-9 and comparative example 1-10 are respectively placed in spraying etch pattern test equipment (model name
Claim: ETCHER (TFT), K.C.Tech Co., Ltd.) in, and by temperature setting be 40 DEG C after heat, and when temperature reaches 40 ±
At 0.1 DEG C, the etch process of sample is carried out.Total etching period is 60s.
Start to spray after placing substrate, and when having been subjected to the etching period of 60s, take out substrate, cleaned with deionized water,
Then dry with air drier, photoresist is removed using photoresist release agent (PR remover).It washes and dries
After substrate, scanning electron microscope (SEM is used；Model name: SU-8010 is manufactured by HITACHI, Ltd.) test residue
The phenomenon that (do not cover be not etched on photoresist part and remaining ITO layer), and following standard is with judging.Knot
Fruit is as shown in Table 2 below.
<residue evaluation criterion>
Zero (good): without residue
X (poor): residue is generated
Evaluation of the test case 3. to metal is damaged by etching agent composite
Three layers of single copper (Cu) metal layer or Mo layer/aluminum metal layer/Mo layer (Mo/Al/Mo) are deposited on
On glass substrate (100mm × 100mm).Later, logical with the sample with the photoresist for being formed on predetermined pattern
Cross photoetching process preparation.
In metal layer, by being suitble to the etchant of metal layer to form plain conductor, then pass through removing work using remover
Photoresist is completely removed and only remains metal layer conductive line by skill.
Each etching agent composite using embodiment 1-9 and comparative example 1-10 is existing under the same conditions with etch process
It is etched on sample 10 minutes.Using spraying etch pattern test equipment (model name: ETCHER (TFT), SEMES Co.,
It Ltd. is), and by the temperature setting of the etching agent composite in etching process procedure about 40 DEG C.Use scanning electron microscope
(SEM；Model name: SU-8010 is manufactured by HITACHI, Ltd.) test sample is to evaluate subsurface damage degree, and result is such as
Shown in the following table 2.
<subsurface damage evaluation criterion>
Zero (good): (thickness, width etc.) generates less than 0.1 μm of damage
X (poor): (thickness, width etc.) generates the damage more than or equal to 0.1 μm
[table 2]
Etching performance and lower metal layer damage (metal damage to the etching agent composite of embodiment 1-9 and comparative example 1-10
Wound) it is evaluated.It can be identified from the embodiment 1-9 being listed in Table 1, in side etching evaluation, side etching distance is
Excellent, to be less than 0.2 μm or good, to be suitable for mass production less than 0.5 μm.The etchant of embodiment 1-9
Composition does not leave residue, and does not generate damage to copper, molybdenum and aluminum metal.
Meanwhile in a comparative example, the result obtained is poor, in side etching evaluation, obtains the knot more than or equal to 0.5 μm
Fruit is not suitable for mass production (Comparative Examples 1 and 2 and 8), generates residue (comparative example 3,4,5,9 and 10), or to copper, molybdenum and aluminium
Metal lower layer generates damage (comparative example 2,6 and 7).
That is, identify that the etching agent composite for indium oxide layer of the invention is environmental benefits, because
Without using noxious material such as sulfuric acid, but also have the advantages that the otherness with existing etching agent composite: it is with excellent
Etch and prevent damaged metal performance without including sulfuric acid.
Etching agent composite for indium oxide layer of the invention is by including that limited amount inorganic acid is provided to environment
Interesting advantage, and it is capable of providing advantage: the composition has excellent etch-rate to indium oxide layer, while preventing
Degree etches and has the low damage performance to lower metal layer.
In addition, the method for the array substrate using etching agent composite production of the invention for liquid crystal display device has
Excellent etching outline, and in the array substrate for liquid crystal display device formed by electrode size be maintained at certain grade or
Higher pixel electrode, and therefore can make the array substrate for liquid crystal display device with excellent driveability.
Claims (7)
1. being used for the etching agent composite of indium oxide layer comprising: relative to the total weight of the composition,
2 weight %-10 weight %'s is selected from one of nitric acid and nitrous acid or a variety of sour (A)；
The chlorine compound (B) of 0.1 weight %-5 weight %；
The sulfate (C) of 0.1 weight %-5 weight %；
The cyclic amine compound (D) of 0.1 weight %-5 weight %；
The phosphate (E) of 0.1 weight %-5 weight %；With
The water (F) of surplus,
Wherein the etching agent composite does not include sulfuric acid,
Wherein the chlorine compound (B) is to be selected from one of sodium chloride, potassium chloride and ammonium chloride or a variety of；The sulfate
It (C) is to be selected from one of ammonium sulfate, sodium sulphate and potassium sulfate or a variety of；And the phosphate (E) be selected from sodium dihydrogen phosphate,
One of disodium hydrogen phosphate, sodium phosphate, potassium dihydrogen phosphate, dipotassium hydrogen phosphate, ammonium dihydrogen phosphate, diammonium hydrogen phosphate and ammonium phosphate
Or it is a variety of, and
Wherein the indium oxide layer has lower layer, and the lower layer is copper base metal layer or the multilayer including copper base metal layer,
And
Wherein the side etching distance of the indium oxide layer is less than 0.2 μm.
2. the etching agent composite according to claim 1 for indium oxide layer, wherein the cyclic amine compound (D) is
Selected from pyrrolyl compound, pyrazolyl compounds, imidazole-based compounds, triazole group compounds, tetrazolyl compounds, pentazolyl
Close one of object, oxazole based compound, isoxazolyl compound, thiazolyl compounds and isothiazolyl compound or a variety of.
3. the etching agent composite according to claim 1 for indium oxide layer, wherein the indium oxide layer is choosing
One of autoxidation indium tin, indium zinc oxide, indium tin zinc oxide and indium gallium zinc are a variety of.
4. method of the production for the array substrate of liquid crystal display device comprising:
A) grid lead is formed on substrate；
B) gate insulating layer is formed on the substrate for including the grid lead；
C) oxide semiconductor layer is formed on the gate insulating layer；
D) source electrode and drain electrode is formed on the oxide semiconductor layer；With
E) pixel electrode for being connected to the drain electrode is formed；
Wherein step e) includes forming the pixel electrode and with according to power and forming indium oxide layer on the substrate
Benefit for the etching agent composite of indium oxide layer etches the indium oxide layer described in requiring 1.
5. the array substrate for liquid crystal display device made using production method according to claim 4.
6. the conducting wire etched with according to claim 1-3 described in any item etching agent composites for indium oxide layer.
7. conducting wire according to claim 6 is indium oxide layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150034303A KR20160109588A (en) | 2015-03-12 | 2015-03-12 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
| KR10-2015-0034303 | 2015-03-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105969360A CN105969360A (en) | 2016-09-28 |
| CN105969360B true CN105969360B (en) | 2019-07-12 |
Family
ID=56988660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610119104.3A Active CN105969360B (en) | 2015-03-12 | 2016-03-02 | Indium oxide layer etching agent composite, array substrate, its production method and conducting wire |
Country Status (3)
| Country | Link |
|---|---|
| KR (2) | KR20160109588A (en) |
| CN (1) | CN105969360B (en) |
| TW (1) | TWI665289B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0657452A (en) * | 1992-08-07 | 1994-03-01 | Asahi Kagaku Kogyo Kk | Composition for etching copper or copper alloy |
| KR20060037742A (en) * | 2004-10-28 | 2006-05-03 | 주식회사 동진쎄미켐 | Etching composition for tft lcd |
| KR100601740B1 (en) * | 2005-04-11 | 2006-07-18 | 테크노세미켐 주식회사 | Etchant for ito & izo thin film |
| CN1971351A (en) * | 2005-11-22 | 2007-05-30 | 东进世美肯株式会社 | Etching composition for ito |
| KR20080045403A (en) * | 2006-11-20 | 2008-05-23 | 동우 화인켐 주식회사 | Etching solution composition and method of etching using the etching solution composition |
| CN102747367A (en) * | 2011-02-15 | 2012-10-24 | 三星电子株式会社 | Non-halogenated etchant and method of manufacturing a display substrate using the non-halogenated etchant |
| CN103571495A (en) * | 2012-08-03 | 2014-02-12 | 三星显示有限公司 | Etchant composition and method of manufacturing thin film transistor using the same |
| CN103668207A (en) * | 2012-09-24 | 2014-03-26 | 东友精细化工有限公司 | Etching agent and method for producing display equipment by using same |
| CN103911156A (en) * | 2012-12-28 | 2014-07-09 | 东友精细化工有限公司 | Etchant composition for metallic oxide layer |
| CN103911616A (en) * | 2012-12-31 | 2014-07-09 | 东友Fine-Chem股份有限公司 | Etching agent composition, method for forming matal pattern, and method for manufacturing array substrate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010103366A (en) * | 2000-05-09 | 2001-11-23 | 고대식 | Urine auto-detecting and alarm circuit adjusted sensitivity of the humidity sensor |
| KR101337263B1 (en) | 2004-08-25 | 2013-12-05 | 동우 화인켐 주식회사 | Etchant composition for indium oxide layer and etching method using the same |
| KR20110045208A (en) * | 2009-10-26 | 2011-05-04 | 군산대학교산학협력단 | Pant diaper and state examination method of pant diaper wearer |
| KR20110087582A (en) * | 2010-01-26 | 2011-08-03 | 삼성전자주식회사 | Etching solution composition and method of etching using the same |
-
2015
- 2015-03-12 KR KR1020150034303A patent/KR20160109588A/en active Application Filing
-
2016
- 2016-02-24 TW TW105105439A patent/TWI665289B/en active
- 2016-03-02 CN CN201610119104.3A patent/CN105969360B/en active Active
-
2021
- 2021-07-05 KR KR1020210088066A patent/KR102400569B1/en active IP Right Grant
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0657452A (en) * | 1992-08-07 | 1994-03-01 | Asahi Kagaku Kogyo Kk | Composition for etching copper or copper alloy |
| KR20060037742A (en) * | 2004-10-28 | 2006-05-03 | 주식회사 동진쎄미켐 | Etching composition for tft lcd |
| KR100601740B1 (en) * | 2005-04-11 | 2006-07-18 | 테크노세미켐 주식회사 | Etchant for ito & izo thin film |
| CN1971351A (en) * | 2005-11-22 | 2007-05-30 | 东进世美肯株式会社 | Etching composition for ito |
| KR20080045403A (en) * | 2006-11-20 | 2008-05-23 | 동우 화인켐 주식회사 | Etching solution composition and method of etching using the etching solution composition |
| CN102747367A (en) * | 2011-02-15 | 2012-10-24 | 三星电子株式会社 | Non-halogenated etchant and method of manufacturing a display substrate using the non-halogenated etchant |
| CN103571495A (en) * | 2012-08-03 | 2014-02-12 | 三星显示有限公司 | Etchant composition and method of manufacturing thin film transistor using the same |
| CN103668207A (en) * | 2012-09-24 | 2014-03-26 | 东友精细化工有限公司 | Etching agent and method for producing display equipment by using same |
| CN103911156A (en) * | 2012-12-28 | 2014-07-09 | 东友精细化工有限公司 | Etchant composition for metallic oxide layer |
| CN103911616A (en) * | 2012-12-31 | 2014-07-09 | 东友Fine-Chem股份有限公司 | Etching agent composition, method for forming matal pattern, and method for manufacturing array substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102400569B1 (en) | 2022-05-20 |
| KR20210088482A (en) | 2021-07-14 |
| CN105969360A (en) | 2016-09-28 |
| TWI665289B (en) | 2019-07-11 |
| KR20160109588A (en) | 2016-09-21 |
| TW201704449A (en) | 2017-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI655323B (en) | Etchant composition for etching a thin layer containing silver and method for manufacturing an array substrate using the same | |
| CN104513983B (en) | Copper and molybdenum contain the etchant of film | |
| KR102002131B1 (en) | Etchant composition and manufacturing method for thin film transistor using the same | |
| CN103173226B (en) | Method for forming wiring, distribution formation etching solution | |
| KR101157207B1 (en) | Etchant for thin film transistor-liquid crystal display | |
| CN108265296A (en) | Etchant, wiring, array substrate for display device and its manufacturing method | |
| TWI675093B (en) | Etchant composition and method of manufacturing array substrate for liquid crystal display | |
| KR20110085254A (en) | Etchant for metal wiring and method of manufacturing thin film transistor array panel using the same | |
| TW201809355A (en) | Etchant composition for copper-based metal layer, and method of manufacturing array substrate for display device using the same | |
| JP2015030855A (en) | Etching solution and etching method | |
| TWI677560B (en) | Etchant composition for etching an indium oxide layer and method of manufacturing display substrate using the same | |
| CN105969360B (en) | Indium oxide layer etching agent composite, array substrate, its production method and conducting wire | |
| TWI797093B (en) | Etching solution composition and etching method | |
| KR102546796B1 (en) | Etchant composition | |
| CN111902569B (en) | Etching solution | |
| KR102707397B1 (en) | Etchant composition for silver thin layer and etching method and method for fabrication metal pattern using the same | |
| TWI759450B (en) | Etching solution, etching method, and manufacturing method of display device | |
| CN107236956A (en) | The method that the array base palte of display device is manufactured for the etching agent composite of copper base metal layer and with it | |
| CN105820819A (en) | Etching solution composition for indium oxide layer and method for etching copper-based metal layer using the same | |
| KR20160108945A (en) | Etching solution composition for molybdenum-containing layer and manufacturing method of an array substrate for liquid crystal display using the same | |
| KR101461180B1 (en) | Copper Echant without Hydrogen Peroxide | |
| KR101406671B1 (en) | Etchant composition and method for fabricating metal pattern | |
| CN106995920A (en) | The manufacture method and copper system metal film etchant of display base plate | |
| KR101614879B1 (en) | Etchant composition, and method for etching a multi-layered metal film | |
| KR102303076B1 (en) | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |