CN105969360A - Etching solution composition for indium oxide layer and manufacturing method of an array substrate, and liquid crystal display and wire using the same - Google Patents
Etching solution composition for indium oxide layer and manufacturing method of an array substrate, and liquid crystal display and wire using the same Download PDFInfo
- Publication number
- CN105969360A CN105969360A CN201610119104.3A CN201610119104A CN105969360A CN 105969360 A CN105969360 A CN 105969360A CN 201610119104 A CN201610119104 A CN 201610119104A CN 105969360 A CN105969360 A CN 105969360A
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- Prior art keywords
- indium oxide
- oxide layer
- weight
- layer
- etching
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- Granted
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- 238000005530 etching Methods 0.000 title claims abstract description 128
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 74
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 18
- 239000000203 mixture Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 150000001805 chlorine compounds Chemical class 0.000 claims abstract description 20
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 16
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 15
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 12
- 239000010452 phosphate Substances 0.000 claims abstract description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 71
- 239000002131 composite material Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 31
- -1 cyclic amine compound Chemical class 0.000 claims description 25
- 239000002253 acid Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 6
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 4
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 3
- 229910000388 diammonium phosphate Inorganic materials 0.000 claims description 3
- ZPWVASYFFYYZEW-UHFFFAOYSA-L dipotassium hydrogen phosphate Chemical compound [K+].[K+].OP([O-])([O-])=O ZPWVASYFFYYZEW-UHFFFAOYSA-L 0.000 claims description 3
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 3
- 229910000402 monopotassium phosphate Inorganic materials 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 235000002639 sodium chloride Nutrition 0.000 claims description 3
- 125000003831 tetrazolyl group Chemical group 0.000 claims description 3
- 239000005696 Diammonium phosphate Substances 0.000 claims description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 2
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- 235000019838 diammonium phosphate Nutrition 0.000 claims description 2
- 235000011167 hydrochloric acid Nutrition 0.000 claims description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 2
- 235000019796 monopotassium phosphate Nutrition 0.000 claims description 2
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 claims description 2
- 239000001103 potassium chloride Substances 0.000 claims description 2
- 235000011164 potassium chloride Nutrition 0.000 claims description 2
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 2
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 2
- 235000011151 potassium sulphates Nutrition 0.000 claims description 2
- 125000003226 pyrazolyl group Chemical group 0.000 claims description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- 125000000335 thiazolyl group Chemical group 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- 239000004254 Ammonium phosphate Substances 0.000 claims 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims 1
- 235000019289 ammonium phosphates Nutrition 0.000 claims 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 claims 1
- 229910000403 monosodium phosphate Inorganic materials 0.000 claims 1
- 235000019799 monosodium phosphate Nutrition 0.000 claims 1
- 239000001488 sodium phosphate Substances 0.000 claims 1
- 229910000162 sodium phosphate Inorganic materials 0.000 claims 1
- 235000011008 sodium phosphates Nutrition 0.000 claims 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 184
- 229910052751 metal Inorganic materials 0.000 description 81
- 239000002184 metal Substances 0.000 description 81
- 239000010949 copper Substances 0.000 description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 38
- 229910052802 copper Inorganic materials 0.000 description 37
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 24
- 239000010936 titanium Substances 0.000 description 24
- 239000010953 base metal Substances 0.000 description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 20
- 229910052719 titanium Inorganic materials 0.000 description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 17
- 239000011733 molybdenum Substances 0.000 description 17
- 229910052750 molybdenum Inorganic materials 0.000 description 16
- 239000004411 aluminium Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 239000001117 sulphuric acid Substances 0.000 description 8
- 235000011149 sulphuric acid Nutrition 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 235000010755 mineral Nutrition 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 229910019670 (NH4)H2PO4 Inorganic materials 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000007836 KH2PO4 Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 1
- 229910000397 disodium phosphate Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- GNSKLFRGEWLPPA-UHFFFAOYSA-M potassium dihydrogen phosphate Chemical compound [K+].OP(O)([O-])=O GNSKLFRGEWLPPA-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XJPANWOKBWZVHC-UHFFFAOYSA-N tetrazol-2-amine Chemical compound NN1N=CN=N1 XJPANWOKBWZVHC-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Human Computer Interaction (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Weting (AREA)
Abstract
The invention relates to an etching solution composition for an indium oxide layer, and more specifically relates to the indium oxide layer etching solution composition comprising the following compounds: nitric acid and/or nitrous acid, chlorine compound, sulfate, amines, phosphate and water; the invention relates to a manufacturing method of an array substrate for a liquid crystal display, the array substrate for the LCD, and a wire.
Description
Technical field
The present invention relates to the etching agent composite for indium oxide layer and its method making the array base palte for liquid crystal indicator of use.
Background technology
Thin film transistor (TFT) (TFT) display floater is typically used as the circuit substrate for independent each pixel driven in liquid crystal indicator, organic electroluminescent (EL) display device etc..Film transistor display panel has and transmits the scanning signal conductor of scanning signal or grid lead and the picture signal wire of transmission picture signal formed therein that or data conductor, and film transistor display panel is formed with the thin film transistor (TFT) being connected to grid lead and data conductor and the pixel electrode etc. being connected to thin film transistor (TFT).
When making such film transistor display panel, including procedure below: on substrate, stacking for grid lead and the metal level of data conductor and forms a lot of metal pattern by etching metal level.As metal level, in order to reduce conductor resistance and increase the cohesive etc. with silicon-on-insulator, extensively study two-layer or the multilamellar of more layers of the alloy between the monolayer being made up of copper or copper alloy and such as copper or copper alloy/other metals, other metals or metal-oxide etc.Such as, copper/molybdenum layer or molybdenum/aluminum/molybdenum layer can form source/drain polar conductor, its grid lead forming TFT-LCD and data wire, and therefore can be played a role in the development of large screen display by it.
After forming metal pattern, stacking is connected to the pixel electrode of thin film transistor (TFT), and implements procedure below: apply photoresist and patterning.Pixel electrode layer generally uses tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) and indium gallium zinc (IGZO) etc., and patterning process includes using photoresist as etching protecting layer by with the patterning of etchant etching.In such etching process, grid lead or contact or be exposed to the source electrode of pixel electrode layer with pixel electrode layer or drain electrode may impaired or deformation during pixel electrode pattern.Therefore, in order to improve such problem, the material of pixel electrode layer, gate electrode and source/drain electrode needs different.In addition, etch capabilities and residue for having excellence by etching the etching agent composite forming pixel electrode to need layer to be etched resist power, simultaneously need to metal level does not cause damage, this metal level is used as the lower floor of such as layers of copper as above, copper/molybdenum layer or molybdenum/aluminum/molybdenum layer etc.
Korean Patent Application Publication No.10-2006-0050581 discloses the etching agent composite including sulphuric acid, nitric acid or perchloric acid, but, it has problems with: when thin film includes copper instantly, the surface of thin film under damage during pixel electrode pattern.
Korean Patent Application Publication No.10-2012-0093499 discloses the halogen-free etching agent composite including nitric acid, sulphuric acid, ammonium compounds, cyclic amine compound and water.But, the etching agent composite with above-mentioned composition includes environmentally harmful material such as sulphuric acid and makes waste water processing load overweight, and this is to environmentally undesirable, and therefore this etching agent composite is not suitable for.
In view of the problems referred to above, having required that the metal level that can serve as lower floor is not caused damage to be also prevented from the loss of wire caused by over etching by etching agent composite, the indium oxide layer that layer to be etched is used for example as pixel electrode simultaneously shows the etching performance of excellence.Additionally, required the use by restriction environmentally harmful material such as sulphuric acid and the most favourable etching agent composite.
[prior art literature]
[patent documentation]
(patent documentation 1) Korean Patent Application Publication No.10-2006-0050581
(patent documentation 2) Korean Patent Application Publication No.10-2012-0093499
Summary of the invention
In view of the problems referred to above, it is made that the present invention, and it is an object of the invention to provide the etching agent composite for indium oxide layer, it has the etch-rate of excellence and has low metal attack performance indium oxide layer, keep constant etching outline and prevent over etching, there is little lateral erosion and carve change, and by limiting mineral acid quantity and kind, there is the performance to environmental benefits；With its method making the array base palte for liquid crystal indicator of use.
An aspect of of the present present invention provides the etching agent composite for indium oxide layer, comprising: relative to the gross weight of compositions,
One or more acid (A) in nitric acid and nitrous acid of 2 weight %-10 weight %；
The chlorine compound (B) of 0.1 weight %-5 weight %；
The sulfate (C) of 0.1 weight %-5 weight %；
The cyclic amine compound (D) of 0.1 weight %-5 weight %；
The phosphate (E) of 0.1 weight %-5 weight %；With
The water (F) of surplus.
Another aspect of the present invention provides the method making the array base palte for liquid crystal indicator, comprising:
A) on substrate, grid lead is formed；
B) on the substrate including described grid lead, gate insulator is formed；
C) on described gate insulator, oxide semiconductor layer is formed；
D) on described oxide semiconductor layer, source electrode and drain electrode are formed；With
E) formation is connected to the pixel electrode of described drain electrode,
Wherein step e) includes forming described pixel electrode by forming indium oxide layer on substrate and etching described indium oxide layer with the etching agent composite for indium oxide layer of the present invention.
Accompanying drawing explanation
The purpose of the present invention and characteristic combine accompanying drawing according to the description of embodiment described below and will become clear from, wherein:
Fig. 1 is with the SEM figure measuring side etching distance after etching agent composite etching；
Fig. 2 is to illustrate the SEM figure that residue produces evaluation result, and (a) is to produce the figure of residue on the ito layer and (b) is the figure not producing residue on the ito layer；
Fig. 3 be shown in layers of copper the evaluation result damaging generation SEM figure, and (a) be produce damage figure and (b) be the figure not producing damage；With
Fig. 4 is the SEM figure being shown in the evaluation result that the upper damage of Mo/Al/Mo tri-layers produces, and (a) is to produce the figure of damage and (b) is the figure not producing damage.
Detailed description of the invention
The inventor of the present invention has made a lot of problem made great efforts to solve the process of etchant refuse; and while preventing over etching, improve the etch-rate to destination layer to be etched; with improve protectiveness to lower metal layer, and with including limited amount mineral acid and including that the etching agent composite of chlorine compound, phosphate etc. is complete the present invention.
The present invention relates to the etching agent composite for indium oxide layer, comprising: relative to the gross weight of etching agent composite, one or more acid (A) in nitric acid and nitrous acid of 2 weight %-10 weight %；The chlorine compound (B) of 0.1 weight %-5 weight %；The sulfate (C) of 0.1 weight %-5 weight %；The cyclic amine compound (D) of 0.1 weight %-5 weight %；The phosphate (E) of 0.1 weight %-5 weight %；Water (F) with surplus.
Indium oxide layer can include tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) or indium gallium zinc (IGZO), but is not limited to this.
Hereinafter, each composition of the etching agent composite being used for indium oxide layer forming the present invention will be described.But, the present invention is not limited to these compositions.
(A) selected from one or more acid of nitric acid and nitrous acid
Nitric acid (the HNO included for the etching agent composite of indium oxide layer3) and/or nitrous acid (HNO2) it is the main component etching indium oxide layer, and act the photoresist pattern of the etching protecting layer preventing damage to be used as indium oxide layer and minimize the effect that residue produces.
(A) one or more acid selected from nitric acid and nitrous acid are preferably included with 2 weight %-10 weight % relative to the gross weight of the etching agent composite of the present invention, are more preferably included with 5 weight %-10 weight %.When based on above-mentioned standard to include less than 2 weight %, it is impossible to favorably accomplish the etching to indium oxide layer, it reduce etch-rate and add the process time.In addition, it may create residue and some regions not exclusively may being etched.Meanwhile, when including more than 10 weight %, etch-rate increases, but, owing to etching is difficult to be controlled, it may occur however that over etching.Additionally, due to the increase of total nitrogen (total N) and the process of liquid wastes that increases, result in expense burden, and problem of environmental pollution becomes even worse, this is the most preferred.
The content of nitric acid and/or nitrous acid can be suitably controlled according to the kind of layer to be etched and character.
(B) chlorine compound
(B) chlorine compound that the etching agent composite for indium oxide layer of the present invention includes plays the effect of assisted etch agent by the displacement reaction of indium oxide layer, plays and removes etch residue and control the effect of etch-rate of layer to be etched together with above-mentioned nitric acid and/or nitrous acid.Existing etching agent composite has the etch-rate of excellence by generally comprising sulphuric acid to layer to be etched, but it is problematic: when with strong acid such as nitric acid is used together time, use that strong acid causes cause over etching to indium oxide layer to environmentally undesirable problem with by damaging to photoresist.Use sulphuric acid by getting rid of and include with limit nitric acid and/or the content of nitrous acid, the etching agent composite for indium oxide layer of the present invention, chlorine compound can solve the problem that environmental problem keeps etching efficiency simultaneously.
The chlorine compound included at the etching agent composite of the present invention is not particularly limited, it is possible to use selected from hydrochloric acid (HCl), sodium chloride (NaCl), potassium chloride (KCl), ammonium chloride (NH4Etc. Cl) one or more of in.
Chlorine compound is included with 0.1 weight %-5 weight % preferably with respect to the gross weight of etching agent composite, is more preferably included with 0.5 weight %-3 weight %.When chlorine compound content is less than 0.1 weight %, it is difficult to obtain the excellent etch-rate efficiency to indium oxide layer, and it may happen that residue produces and the phenomenon of undercut.Meanwhile, when chlorine compound content is more than 5 weight %, the over etching to pixel electrode occurring owing to etch-rate increases, therefore pixel electrode is difficult to form the region for fully driving.In addition, to include that chlorine compound is unaccommodated more than 5 weight %, as it may occur that cause damage to can be used as the metal level such as copper (Cu) of lower floor, aluminum (Al), molybdenum (Mo) or titanium (Ti), and key needs to limit the use of chlorine compound.
It is to say, the chlorine compound content meeting above-mentioned scope is preferably as do not cause the damage to glass substrate or lower metal layer, prevent over etching and etch residue simultaneously.
(C) sulfate (sulfate)
(C) sulfate that the etching agent composite for indium oxide layer of the present invention includes play prevent damage lower metal layer such as copper, aluminum and the effect of molybdenum.It is to say, sulfate plays the effect of corrosion inhibitor, this corrosion inhibitor prevents nitric acid and/or nitrous acid and the lower floor of chlorine compound damage indium oxide layer.
In the present invention, the kind of (C) sulfate is not particularly limited, and can include ammonium sulfate ((NH4)2SO4), ammonium sulfide ((NH4)2S), sodium sulfate (Na2And potassium sulfate (K S)2Etc., and can use selected from therein one or more of S).
(C) sulfate is included with 0.1 weight %-5 weight % preferably with respect to the gross weight of the etching agent composite of the present invention, is more preferably included with 0.5 weight %-3 weight %.To include that sulfate is undesirable less than 0.1 weight %, because it is difficult to expectation prevents from corroding and can be used as the metal level such as copper (Cu) of lower floor, aluminum (Al), molybdenum (Mo) and the effect of titanium (Ti).In such a case, it is possible to the amount of minimizing chlorine compound is in case stopping loss and hindering metal level, but, this method is not suitable for, owing to the residue after may increasing etching indium oxide layer produces speed.Meanwhile, when sulfate is to be included more than 5 weight %, prevent from corroding the effective of lower floor, however, it is possible to increase the process time by using the etchant of main purpose to reduce the etch-rate for indium oxide layer, and residue generation defect may be caused.
(D) cyclic amine compound
(D) cyclic amine compound that the etching agent composite for indium oxide layer of the present invention includes play prevent damage lower metal layer such as copper, aluminum and the effect of molybdenum.It is to say, as sulfate, cyclic amine compound acts the effect of the lower floor preventing nitric acid and/or nitrous acid and chlorine compound damage indium oxide layer.
(D) kind of cyclic amine compound is not particularly limited, its concrete example can include pyrrolyl compound, pyrazolyl compounds, imidazole-based compounds, triazole group compounds, tetrazolyl compounds, pentazolyl compound, oxazolyl compound, isoxazolyl compound, thiazolyl compounds, isothiazolyl compound etc., it is possible to uses selected from therein one or more of.It is highly preferred that can include in the benzotriazole as triazole group compounds and the 5-Aminotetrazole as tetrazolyl compounds, 3-Aminotetrazole and 5-methyl tetrazolium is one or more of.It is highly preferred that benzotriazole wherein can be included.
(D) cyclic amine compound is included with 0.1 weight %-5 weight % preferably with respect to the gross weight of the etching agent composite of the present invention, is more preferably included with 0.5 weight %-2 weight %.To include that cyclic amine compound is the most preferred less than 0.1 weight %, because it is difficult to expect the effect reducing damage that can be used as the metal level such as copper (Cu) of lower floor, aluminum (Al), molybdenum (Mo) and titanium (Ti).Meanwhile, when to include cyclic amine compound more than 5 weight %, the process time may be increased by using etchant to reduce the etch-rate for indium oxide layer.
(E) phosphate
(E) phosphate that the etching agent composite for indium oxide layer of the present invention includes reduces the side etching distance to thin film in wet etch process, prevent over etching by preventing the increase of the amount of the lateral etches caused by the increase of etching period, and play the effect of uniform etching.
The indium oxide layer forming pixel electrode usually has the thickness less than or equal to 50nm, but according to the rapid response speed of display and high-resolution requirement, it tends to thicker to more than or equal to 100nm.Along with the increase of indium oxide layer thickness, increase for etching the etching period of this layer, accordingly, because the amount of lateral etches and longitudinally etching increases, produce over etching problem.Accordingly, it is difficult to this layer is applied in the wire of the miniaturization of high-resolution.Phosphate reduces the amount of side etching, and therefore rises and improve side etching amount, i.e. increase it may happen that the effect of horizontal over etching due to etching period.
Phosphatic concrete example can include sodium dihydrogen phosphate (NaH2PO4), disodium hydrogen phosphate (Na2HPO4), sodium phosphate (Na3PO4), potassium dihydrogen phosphate (KH2PO4), dipotassium hydrogen phosphate (K2HPO4), ammonium dihydrogen phosphate ((NH4)H2PO4), diammonium phosphate ((NH4)2HPO4) and ammonium phosphate ((NH4)3PO4) etc., but it is not limited to this, it is possible to use one or more being selected from it.
(E) phosphate can be included with 0.1 weight %-5 weight % preferably with respect to the gross weight of the etching agent composite of the present invention, is more preferably included with 0.5 weight %-2 weight %.When phosphate content is less than 0.1 weight %, the etch uniformity in substrate declines, or the compositions of the present invention may not apply to be formed the wire of miniaturization due to the increase of side etching.When its content is more than 5 weight %, the etch-rate of indium oxide layer is reduced more than or equal to 10 times, thereby increases and it is possible to can not get target etch rate, and therefore add the process time, it causes the decline of process efficiency, and it may happen that defect such as produces indium oxide layer residue.
(F) water
The etching agent composite for indium oxide layer of the present invention also includes (F) water in addition to nitric acid and/or nitrous acid, chlorine compound, sulfate, cyclic amine compound and phosphate.Water is not particularly limited, it is however preferred to use deionized water and water for semiconductor technology is preferably used.It is highly preferred that water has the ratio resistance value more than or equal to 18M Ω/cm.
Aqueous phase can be included with surplus for 100% weight of etching agent composite.
The etching agent composite for indium oxide layer of the present invention can also include in addition to mentioned component selected from etching control agent, surfactant, metal ion chelation agent, corrosion inhibiter, pH controlling agent and other be not limited to one or more in this additive.Can select and use from additive commonly used in the art to improve the effect of the present invention within the scope of the present invention.
The composition of the etching agent composite for indium oxide layer forming the present invention preferably has the purity grade for semiconductor technology.
The concrete example of the indium oxide layer that the etching agent composite for indium oxide layer of the present invention etches can include one or more in tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) and indium gallium zinc (IGZO) etc., but is not limited to this.Indium oxide layer can be crystalline state or amorphous state, and when in amorphous state, this layer can be heat treatment to crystallization and be used.
The lower floor of indium oxide layer is not caused damage by the etching agent composite for indium oxide layer of the present invention.The kind of lower floor is not particularly limited, and its concrete example can include lower floor, and it includes copper base metal layer, molybdenio metal level, aluminium based metal layer, titanium-based metal layer or the multilamellar formed with them, it is possible to is more preferably used and is applied to it.
Copper base metal layer means that layers of copper or copper alloy layer, molybdenio metal level mean that molybdenum layer or Mo alloy, aluminium based metal layer mean that aluminium lamination or aluminium alloy layer, titanium-based metal layer mean titanium layer or titanium alloy layer.
Multilamellar includes, such as, the two-layer of molybdenio metal level/copper base metal layer, it has copper base metal layer and is lower floor and molybdenio metal level is upper strata；The two-layer of copper base metal layer/molybdenio metal level, it has molybdenio metal level and is lower floor and copper base metal layer is upper strata；The two-layer of copper base metal layer/molybdenum-titanium-based metal layer；Three layers or the multilamellar of more layers, the most alternately laminated copper base metal layer and molybdenio metal level, such as molybdenio metal level/copper base metal layer/molybdenio metal level or copper base metal layer/molybdenio metal level/copper base metal layer.
Additionally, multilamellar includes, such as, the two-layer of titanium-based metal layer/copper base metal layer, it has copper base metal layer and is lower floor and titanium-based metal layer is upper strata；The two-layer of copper base metal layer/titanium-based metal layer, it has titanium-based metal layer and is lower floor and copper base metal layer is upper strata；Three layers or the multilamellar of more layers, the most alternately laminated copper base metal layer and titanium-based metal layer, such as titanium-based metal layer/copper base metal layer/titanium-based metal layer or copper base metal layer/titanium-based metal layer/copper base metal layer.
Further, multilamellar includes, such as, the two-layer of molybdenio metal level/aluminium based metal layer, it has aluminium based metal layer and is lower floor and molybdenio metal level is upper strata；The two-layer of aluminium based metal layer/molybdenio metal level, it has molybdenio metal level and is lower floor and aluminium based metal layer is upper strata；Three layers or the multilamellar of more layers, the most alternately laminated titanium-based metal layer and aluminium based metal layer, such as titanium-based metal layer/aluminium based metal layer/titanium-based metal layer or aluminium based metal layer/titanium-based metal layer/aluminium based metal layer.
For multilamellar, can diversely consider to be formed the layer being placed in top of multilamellar or be placed in bottom layer material or with the cohesive of above-mentioned layer to determine Coating combination structure.
Above-mentioned copper, molybdenum, aluminum or titanium alloy layer means have copper, molybdenum, aluminum or titanium as main component the metal level of the alloy being prepared as using other metals according to the performance of layer.Such as, Mo alloy means to be formed as the layer of alloy, and it has molybdenum as main component and one or more included in titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd) and indium (In).
The etching agent composite for indium oxide layer of the present invention can particularly preferably use at etching indium oxide layer, and this indium oxide layer has copper base metal layer, copper base metal layer/molybdenio metal level, titanium-based metal layer/copper base metal layer or molybdenio metal level/aluminium based metal layer/molybdenio metal level as lower floor.But, the purposes for the etching agent composite of indium oxide layer is not limited to above-mentioned metal level.
Additionally, the present invention provides the method making the array base palte for liquid crystal indicator, it includes a) being formed on substrate grid lead；B) on the substrate including described grid lead, gate insulator is formed；C) on described gate insulator, oxide semiconductor layer is formed；D) on described oxide semiconductor layer, source electrode and drain electrode are formed；With e) formation is connected to the pixel electrode of described drain electrode, wherein step e) includes forming described pixel electrode by forming indium oxide layer on the substrate and etching described indium oxide layer with the etching agent composite for indium oxide layer of the present invention.
Indium oxide layer can include tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) and indium gallium zinc (IGZO) etc., but is not limited to this.
A) step can be included on substrate formation metal level and form grid lead by etching this metal level, d) step can be included on oxide semiconductor layer formation metal level and form source electrode and drain electrode by etching this metal level, and a) or d) etching of metal level can use the suitable etching agent composite for metal level in addition to the etching agent composite for indium oxide layer of the present invention to carry out in step.
Array base palte for liquid crystal indicator can be thin film transistor (TFT) (TFT) array base palte.
Additionally, the present invention is provided to the array base palte of liquid crystal indicator, this liquid crystal indicator uses the manufacture method of the array base palte of liquid crystal indicator to be produced.
Present invention also offers the wire using the etching agent composite for indium oxide layer of the present invention to etch.More specifically, wire can be that typically in touch panel (TSP) forms X-axis and the touch sensible wire of Y-axis coordinate.
As an example, touch panel can be produced by ITO layer is deposited on a surface of a bottom substrate and etches the X-axis in this ITO layer and Y-axis wire.
As another example, touch panel can be produced by each X-axis and the Y-axis wire that ITO layer are deposited on two surfaces of bottom substrate and etch and pattern in this ITO layer.
The etching agent composite for indium oxide layer that can use the present invention is etched.
Wire can be indium oxide layer, and more specifically, can be one or more of in tin indium oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO) and indium gallium zinc (IGZO) etc., but be not limited to this.This indium oxide layer can be crystalline state or amorphous state.
As it has been described above, the etching agent composite for indium oxide layer of the application of the invention, can effectively control and etch the metal oxide layer including indium, and corrosion and the damage of lower wire can be prevented.Additionally, the etching agent composite for indium oxide layer of the present invention is also used in making in Organic Light Emitting Diode, touch screen, storing semiconductor display floater etc. and flat faced display such as liquid crystal indicator.Additionally, said composition may be also used in making, other include, in the electronic installation of the metal-oxide layer conductor with monolayer formation, forming the metal oxide layer including indium in this monolayer.
Hereinafter, the present invention will be described in more detail with reference to embodiment.But, following example are served only for illustration purpose, and the scope of the present invention is not limited to following example.Following example suitably can be revised within the scope of the invention by those skilled in the art or change.By the technological thought by the claim being described determines the scope of the present invention.
The preparation of<embodiment and comparative example>etching agent composite
Composition listed in table 1 below and content prepare embodiment 1-9 and the etching agent composite of comparative example 1-10.
[table 1]
<test case>
Test case
1.
Evaluation to the side etching of etching agent composite
Single a-ITO is deposited upon on glass substrate (100mm × 100mm).Afterwards, prepared by photoetching process with the sample with the photoresist being formed on predetermined pattern.
Each etching agent composite using embodiment 1-9 and comparative example 1-10 is etched on sample.Use spraying etch pattern test equipment (model name: ETCHER (TFT), SEMES Co., Ltd.), and the temperature of the etching agent composite in etching process procedure is set to 40 DEG C, when temperature reaches 40 ± 0.1 DEG C, in the etch process of sample, the etching for ITO layer carries out 60 seconds.After cleaning and be dried this layer, use scanning electron microscope (SEM；Model name: SU-8010, is manufactured by HITACHI, Ltd.) investigate side etching distance, result is as shown in Table 2 below.
<side etching evaluation criterion>
◎ (excellent): less than 0.2 μm
Zero (well): more than or equal to 0.2 μm and less than 0.5 μm
X (poor): more than or equal to 0.5 μm
Test case
2.
The mensuration of residue
Single a-ITO is deposited upon on glass substrate (100mm × 100mm).Afterwards, prepared by photoetching process with the sample with the photoresist being formed on predetermined pattern.
The etching agent composite of embodiment 1-9 and comparative example 1-10 is respectively placed in spraying etch pattern test equipment (model name: ETCHER (TFT), K.C.Tech Co., Ltd.) in, and temperature is set to 40 DEG C of post-heating, and when temperature reaches 40 ± 0.1 DEG C, carry out the etch process of sample.Total etching period is 60s.
Start injection after placing substrate, and when through the etching period of 60s, take out substrate, clean with deionized water, be then dried with air drier, use photoresist release agent (PR remover) to remove photoresist.Clean and after dry substrate, use scanning electron microscope (SEM；Model name: SU-8010, is manufactured by HITACHI, Ltd.) test residue (not covering the phenomenon of the ITO layer not being etched in photoresist part and remain), and following standard is with judging.Result is as shown in Table 2 below.
<residue evaluation criterion>
Zero (well): without residue
X (poor): produce residue
Test case
3.
To the evaluation by etching agent composite damage metal
It is deposited upon the three of single copper (Cu) metal level or Mo layer/aluminum metal layer/Mo layer (Mo/Al/Mo) on glass substrate (100mm × 100mm).Afterwards, prepared by photoetching process with the sample with the photoresist being formed on predetermined pattern.
In metal level, form plain conductor by the etchant of applicable metal level, then use remover to be removed completely by photoresist by stripping technology and only remain metal layer conductive line.
Embodiment 1-9 is used to be etched on sample under conditions of identical with etch process 10 minutes with each etching agent composite of comparative example 1-10.Use spraying etch pattern test equipment (model name: ETCHER (TFT), SEMES Co., Ltd.), and the temperature of the etching agent composite in etching process procedure is set to about 40 DEG C.Use scanning electron microscope (SEM；Model name: SU-8010, is manufactured by HITACHI, Ltd.) detection sample is to evaluate subsurface damage degree, and result is as shown in Table 2 below.
<subsurface damage evaluation criterion>
Zero (well): (thickness, width etc.) generates less than the damage of 0.1 μm
X (poor): (thickness, width etc.) produces the damage more than or equal to 0.1 μm
[table 2]
Embodiment 1-9 and the etching performance of the etching agent composite of comparative example 1-10 and lower metal layer damage (damaged metal) are evaluated.Can identify from embodiment 1-9 being listed in Table 1, in side etching is evaluated, side etching distance is excellent, and for less than 0.2 μm or good, for less than 0.5 μm, it is suitable for producing in a large number.The etching agent composite of embodiment 1-9 does not leaves residue, and copper, molybdenum and aluminum metal are not produced damage.
Simultaneously, in a comparative example, the result obtained is poor, in side etching is evaluated, obtain the result more than or equal to 0.5 μm, it is not suitable for producing in a large number (comparative example 1,2 and 8), produces residue (comparative example 3,4,5,9 and 10), or copper, molybdenum and aluminum metal lower floor are produced damage (comparative example 2,6 and 7).
That is, the etching agent composite for indium oxide layer identifying the present invention is environmental benefits, because not using noxious substance such as sulphuric acid, but also there is the diversity advantage with existing etching agent composite: it has the etching of excellence and prevents damaged metal performance and do not include sulphuric acid.
The etching agent composite for indium oxide layer of the present invention is by including that limited amount mineral acid provides the advantage to environmental benefits, and can provide the advantage that said composition has the etch-rate of excellence to indium oxide layer, prevent over etching simultaneously and there is the low damage performance to lower metal layer.
In addition, the etching agent composite using the present invention makes the method for the array base palte for liquid crystal indicator and has excellent etching outline, and being formed on the array base palte of liquid crystal indicator, electrode size is maintained at certain grade or higher pixel electrode, and therefore, it is possible to make the array base palte for liquid crystal indicator with excellent driveability.
Claims (10)
1. for the etching agent composite of indium oxide layer, comprising: relative to described compositions
Gross weight,
One or more acid (A) in nitric acid and nitrous acid of 2 weight %-10 weight %；
The chlorine compound (B) of 0.1 weight %-5 weight %；
The sulfate (C) of 0.1 weight %-5 weight %；
The cyclic amine compound (D) of 0.1 weight %-5 weight %；
The phosphate (E) of 0.1 weight %-5 weight %；With
The water (F) of surplus.
Etching agent composite for indium oxide layer the most according to claim 1, Qi Zhongsuo
Stating chlorine compound (B) is one or more in hydrochloric acid, sodium chloride, potassium chloride and ammonium chloride.
Etching agent composite for indium oxide layer the most according to claim 1, Qi Zhongsuo
Stating sulfate (C) is one or more in ammonium sulfate, ammonium sulfide, sodium sulfate and potassium sulfate.
Etching agent composite for indium oxide layer the most according to claim 1, Qi Zhongsuo
State cyclic amine compound (D) be selected from pyrrolyl compound, pyrazolyl compounds, imidazole-based compounds,
Triazole group compounds, tetrazolyl compounds, pentazolyl compound, oxazolyl compound, isoxazole
One or more in based compound, thiazolyl compounds and isothiazolyl compound.
Etching agent composite for indium oxide layer the most according to claim 1, Qi Zhongsuo
State phosphate (E) be selected from sodium dihydrogen phosphate, disodium hydrogen phosphate, sodium phosphate, potassium dihydrogen phosphate,
One or more in dipotassium hydrogen phosphate, ammonium dihydrogen phosphate, diammonium phosphate and ammonium phosphate.
Etching agent composite for indium oxide layer the most according to claim 1, Qi Zhongsuo
Stating indium oxide layer is in tin indium oxide, indium zinc oxide, indium tin zinc oxide and indium gallium zinc
One or more.
7. the method making the array base palte for liquid crystal indicator, comprising:
A) on substrate, grid lead is formed；
B) on the substrate including described grid lead, gate insulator is formed；
C) on described gate insulator, oxide semiconductor layer is formed；
D) on described oxide semiconductor layer, source electrode and drain electrode are formed；With
E) formation is connected to the pixel electrode of described drain electrode；
Wherein step e) includes being formed described pixel by forming indium oxide layer on the substrate
Electrode and etch institute with the etching agent composite for indium oxide layer according to claim 1
State indium oxide layer.
8. use that manufacture method according to claim 7 makes for liquid crystal indicator
Array base palte.
9. with according to the etchant group for indium oxide layer described in any one of claim 1-6
The wire of compound etching.
Wire the most according to claim 9, it is indium oxide layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0034303 | 2015-03-12 | ||
| KR1020150034303A KR20160109588A (en) | 2015-03-12 | 2015-03-12 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
Publications (2)
| Publication Number | Publication Date |
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| CN105969360A true CN105969360A (en) | 2016-09-28 |
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| Publication number | Publication date |
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| CN105969360B (en) | 2019-07-12 |
| KR102400569B1 (en) | 2022-05-20 |
| TWI665289B (en) | 2019-07-11 |
| KR20160109588A (en) | 2016-09-21 |
| TW201704449A (en) | 2017-02-01 |
| KR20210088482A (en) | 2021-07-14 |
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