TWI677560B - Etchant composition for etching an indium oxide layer and method of manufacturing display substrate using the same - Google Patents
Etchant composition for etching an indium oxide layer and method of manufacturing display substrate using the same Download PDFInfo
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- TWI677560B TWI677560B TW105104268A TW105104268A TWI677560B TW I677560 B TWI677560 B TW I677560B TW 105104268 A TW105104268 A TW 105104268A TW 105104268 A TW105104268 A TW 105104268A TW I677560 B TWI677560 B TW I677560B
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- Prior art keywords
- acid
- etchant composition
- indium oxide
- oxide layer
- etching
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- 238000005530 etching Methods 0.000 title claims abstract description 47
- 239000000203 mixture Substances 0.000 title claims abstract description 45
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 36
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 19
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 24
- -1 cyclic amine compound Chemical class 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 19
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 17
- 229910017604 nitric acid Inorganic materials 0.000 claims description 17
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 14
- 230000007797 corrosion Effects 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 14
- 239000003112 inhibitor Substances 0.000 claims description 14
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 8
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 7
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 5
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 3
- 150000003536 tetrazoles Chemical class 0.000 claims description 3
- 150000003852 triazoles Chemical class 0.000 claims description 3
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 2
- WUHLVXDDBHWHLQ-UHFFFAOYSA-N pentazole Chemical compound N=1N=NNN=1 WUHLVXDDBHWHLQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 74
- 230000000052 comparative effect Effects 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- GEHMBYLTCISYNY-UHFFFAOYSA-N Ammonium sulfamate Chemical compound [NH4+].NS([O-])(=O)=O GEHMBYLTCISYNY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 2
- 239000005695 Ammonium acetate Substances 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 2
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 2
- 229940043376 ammonium acetate Drugs 0.000 description 2
- 235000019257 ammonium acetate Nutrition 0.000 description 2
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 2
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 description 2
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- GGKWWYDCXQRQCE-UHFFFAOYSA-N azane;benzene-1,4-diol Chemical compound N.OC1=CC=C(O)C=C1 GGKWWYDCXQRQCE-UHFFFAOYSA-N 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 2
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Substances C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 150000003854 isothiazoles Chemical class 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 150000002545 isoxazoles Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 150000003853 pentazoles Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- XJPANWOKBWZVHC-UHFFFAOYSA-N tetrazol-2-amine Chemical compound NN1N=CN=N1 XJPANWOKBWZVHC-UHFFFAOYSA-N 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
公開了用於蝕刻氧化銦層的蝕刻劑組合物及使用其製作顯示基板的方法，其中蝕刻劑組合物不包含對環境有害的硫酸，蝕刻後不產生殘留物，並且在蝕刻過程中不損害如由Cu，Ti，Mo或Al製成的下層。 Disclosed are an etchant composition for etching an indium oxide layer and a method for manufacturing a display substrate using the same, wherein the etchant composition does not contain sulfuric acid that is harmful to the environment, does not generate residues after etching, and does not damage such as during the etching process. Lower layer made of Cu, Ti, Mo or Al.
Description
本發明涉及用於蝕刻氧化銦層的蝕刻劑組合物 及使用其製作顯示基板的方法。 The invention relates to an etchant composition for etching an indium oxide layer. And a method for manufacturing a display substrate using the same.
通常，顯示面板包括具有作為用於驅動像素的開關元件的薄膜電晶體的顯示基板。該顯示基板包括多個金屬圖案，並且該金屬圖案主要通過光刻形成。該光刻工藝包括在將被刻蝕並在基板上存在的薄層上形成光致抗蝕劑層，曝光和顯影該光致抗蝕劑層以形成光致抗蝕劑圖案，並使用光致抗蝕劑圖案作為蝕刻屏障用蝕刻劑蝕刻所述薄層，因此使薄層圖案化。 Generally, a display panel includes a display substrate having a thin film transistor as a switching element for driving a pixel. The display substrate includes a plurality of metal patterns, and the metal patterns are mainly formed by photolithography. The photolithography process includes forming a photoresist layer on a thin layer to be etched and present on a substrate, exposing and developing the photoresist layer to form a photoresist pattern, and using photoresist The resist pattern etches the thin layer as an etchant for an etching barrier, thereby patterning the thin layer.
在蝕刻薄層的過程中，使用蝕刻劑去除與由光致抗蝕劑圖案暴露區域相應的薄層部分，而且暴露被去除薄層下方的下薄層。因此，暴露的下薄層接觸到蝕刻劑，不被期望地由於蝕刻劑損害下薄層。 During the etching of the thin layer, an etchant is used to remove a portion of the thin layer corresponding to the area exposed by the photoresist pattern, and the lower thin layer below the removed thin layer is exposed. Therefore, the exposed lower layer is in contact with the etchant, and the lower layer is not expected to be damaged by the etchant.
用以蝕刻氧化銦層的蝕刻劑的例子可能包括王水類蝕刻劑(韓國專利申請公開號1996-002903)，氯化鐵類蝕刻劑(美國專利號5,456,795)，和草酸蝕刻劑(韓國專利申請公開號2000-0017470)，其可能具有高化學活性，因此易損害下薄層。為了解決此問題，公開了(韓國專利申請公開號2005-0077451)用於蝕刻氧化銦層的蝕刻劑組合物，包括作為主要氧化劑的硫酸和作為輔助氧化劑的硝酸或高氯酸。上述蝕刻劑組合物可能在蝕刻氧化銦層過程中不損害包含鋁-釹(Al-Nd)，鉬(Mo)和鉻(Cr)的下薄層。 Examples of the etchant used to etch the indium oxide layer may include aqua regia-based etchant (Korean Patent Application Publication No. 1996-002903), iron chloride-based etchant (U.S. Patent No. 5,456,795), and oxalic acid etchant (Korean Patent Application) Publication No. 2000-0017470), which may have high chemical activity, and thus easily damage the lower layer. To solve this problem, an etchant composition (Korea Patent Application Publication No. 2005-0077451) for etching an indium oxide layer is disclosed, including sulfuric acid as a primary oxidant and nitric acid or perchloric acid as a secondary oxidant. The above-mentioned etchant composition may not damage the lower thin layer including aluminum-neodymium (Al-Nd), molybdenum (Mo), and chromium (Cr) during the etching of the indium oxide layer.
然而，使用上述蝕刻劑組合物蝕刻在由銅(Cu)製成的下層上形成的氧化銦層的情況下，銅層表面被蝕刻劑組合物損害，並且由於對環境有害的硫酸的使用環境保護方面被限制。 However, in the case where the indium oxide layer formed on the lower layer made of copper (Cu) is etched using the above-mentioned etchant composition, the surface of the copper layer is damaged by the etchant composition, and environmental protection is caused by the use of sulfuric acid which is harmful to the environment Aspects are restricted.
專利文件：韓國專利申請公開號1996-002903 Patent document: Korean Patent Application Publication No. 1996-002903
U.S.專利號5,456,795 U.S. Patent No. 5,456,795
韓國專利申請公開號2000-0017470 Korean Patent Application Publication No. 2000-0017470
韓國專利申請公開號2005-0077451 Korean Patent Application Publication No. 2005-0077451
因此，本發明考慮到相關技術中發生的問題，並且本發明的目的為提供即使不使用對環境有害的硫 酸，蝕刻後也不產生殘留物的蝕刻劑組合物，其不損害下層(Cu，Al，Mo，Ti)，並且具有改良的蝕刻特性。 Therefore, the present invention takes into consideration problems occurring in the related art, and an object of the present invention is to provide even if sulfur which is harmful to the environment is not used. Etchant composition that does not generate residue after etching, does not damage the underlying layer (Cu, Al, Mo, Ti), and has improved etching characteristics.
本發明提供用於蝕刻氧化銦層的蝕刻劑組合物，包括：3-10wt%的硝酸，3-10wt%的磺酸，0.1-5wt%的阻蝕劑，0.1-5wt%的環胺化合物，和剩餘部分的水。 The invention provides an etchant composition for etching an indium oxide layer, comprising: 3-10 wt% nitric acid, 3-10 wt% sulfonic acid, 0.1-5 wt% corrosion inhibitor, 0.1-5 wt% cyclic amine compound, And the rest of the water.
在一實施方式中，磺酸可以包括選自由甲基磺酸、對甲苯磺酸、氨基磺酸，和萘酚磺酸組成的組中的至少一個。 In one embodiment, the sulfonic acid may include at least one selected from the group consisting of methanesulfonic acid, p-toluenesulfonic acid, sulfamic acid, and naphtholsulfonic acid.
在另一實施方式中，阻蝕劑可以包括選自由醋酸銨(CH3COONH4)，氨基磺酸銨(NH4SO3NH2)，苯二酚銨(NH4C6H4(OH)2)，氨基甲酸銨(NH2COONH4)，氯化銨(NH4Cl)，磷酸二氫銨(NH4H2PO4)，甲酸銨(NH4COOH)，碳酸氫銨(NH4HCO3)，檸檬酸銨((H4NO2CCH2C(OH)(CO2NH4)CH2CO2NH4)或(OC(CO2H)(CH2CO2NH4)2))，硝酸銨(NH4NO3)，過硫酸銨((NH4)2S2O8)，氨基磺酸銨(H2NSO3NH4)，和硫酸銨((NH4)2SO4)組成的組中的至少一個。 In another embodiment, the corrosion inhibitor may include a material selected from the group consisting of ammonium acetate (CH 3 COONH 4 ), ammonium sulfamate (NH 4 SO 3 NH 2 ), and ammonium hydroquinone (NH 4 C 6 H 4 (OH) 2 ), ammonium carbamate (NH 2 COONH 4 ), ammonium chloride (NH 4 Cl), ammonium dihydrogen phosphate (NH 4 H 2 PO 4 ), ammonium formate (NH 4 COOH), ammonium bicarbonate (NH 4 HCO 3 ), ammonium citrate ((H 4 NO 2 CCH 2 C (OH) (CO 2 NH 4 ) CH 2 CO 2 NH 4 ) or (OC (CO 2 H) (CH 2 CO 2 NH 4 ) 2 )) , Ammonium nitrate (NH 4 NO 3 ), ammonium persulfate ((NH4) 2 S 2 O 8 ), ammonium sulfamate (H 2 NSO 3 NH 4 ), and ammonium sulfate ((NH4) 2 SO 4 ) At least one of the group.
在又一實施方式中，環胺化合物可以包括選自由吡咯類化合物，吡唑類化合物，咪唑類化合物，三唑類化合物，四唑類化合物，五唑類化合物，惡唑類化合物，異惡唑類化合物，噻唑類化合物和異噻唑類化合物組成的組中的至少一個。 In yet another embodiment, the cyclic amine compound may include a compound selected from the group consisting of pyrrole-based compounds, pyrazole-based compounds, imidazole-based compounds, triazole-based compounds, tetrazole-based compounds, pentazole-based compounds, oxazole-based compounds, isoxazole At least one selected from the group consisting of a thiazole compound, a thiazole compound, and an isothiazole compound.
此外，本發明提供製作顯示基板的方法，包括：在基板上形成包括柵電極，源極電極和漏極電極的開 關元件；在具有所述開關元件的基板上形成氧化銦層；和通過使用包括3-10wt%的硝酸，3-10wt%的磺酸，0.1-5wt%的阻蝕劑，0.1-5wt%的環胺化合物，和剩餘部分的水的蝕刻劑組合物使氧化銦層圖案化形成連接至所述漏極電極的第一像素電極。 In addition, the present invention provides a method for manufacturing a display substrate, including: forming an opening including a gate electrode, a source electrode, and a drain electrode on the substrate; Off element; forming an indium oxide layer on a substrate having the switching element; and by using 3-10 wt% nitric acid, 3-10 wt% sulfonic acid, 0.1-5 wt% corrosion inhibitor, 0.1-5 wt% The cyclic amine compound, and the remaining portion of the etchant composition of water pattern the indium oxide layer to form a first pixel electrode connected to the drain electrode.
在一實施方式中，磺酸可以包括選自由甲基磺酸、對甲苯磺酸、氨基磺酸，和萘酚磺酸組成的組中的至少一個。 In one embodiment, the sulfonic acid may include at least one selected from the group consisting of methanesulfonic acid, p-toluenesulfonic acid, sulfamic acid, and naphtholsulfonic acid.
此外，本發明提供製作顯示基板的方法，包括：在基板上形成包括柵電極，源極電極和漏極電極的開關元件；形成直接連接至漏極電極並包括氧化銦層的第一像素電極；使用包括3-10wt%的硝酸，3-10wt%的磺酸，0.1-5wt%的阻蝕劑，0.1-5wt%的環胺化合物，和剩餘部分的水的蝕刻劑組合物去除第一像素電極；和在第一像素電極被去除的基板上形成直接連接至漏極電極的第二像素電極。 In addition, the present invention provides a method for manufacturing a display substrate, including: forming a switching element including a gate electrode, a source electrode, and a drain electrode on a substrate; and forming a first pixel electrode directly connected to the drain electrode and including an indium oxide layer; Remove the first pixel electrode using an etchant composition including 3-10 wt% nitric acid, 3-10 wt% sulfonic acid, 0.1-5 wt% corrosion inhibitor, 0.1-5 wt% cyclic amine compound, and the remainder of water And forming a second pixel electrode directly connected to the drain electrode on the substrate from which the first pixel electrode is removed.
在一實施方式中，磺酸可以包括選自由甲基磺酸、對甲苯磺酸、氨基磺酸，和萘酚磺酸組成的組中的至少一個。 In one embodiment, the sulfonic acid may include at least one selected from the group consisting of methanesulfonic acid, p-toluenesulfonic acid, sulfamic acid, and naphtholsulfonic acid.
根據本發明，用於蝕刻氧化銦層的蝕刻劑組合物不包含對環境有害的硫酸，蝕刻後不產生殘留物，並且在蝕刻過程中不損害如由Cu，Ti，Mo，或Al製成的下層。 According to the present invention, the etchant composition for etching an indium oxide layer does not contain sulfuric acid that is harmful to the environment, does not generate a residue after the etching, and does not damage during the etching process such as made of Cu, Ti, Mo, or Al Lower level.
本發明的上述和其他目的，特徵和優點將從以 下結合附圖的詳細描述中更清楚地被理解，其中：圖1示出當使用實施例1的蝕刻劑時側面蝕刻的掃描電子顯微鏡(SEM)圖；圖2示出當使用實施例2的蝕刻劑時側面蝕刻的SEM圖；圖3示出當使用實施例3的蝕刻劑時側面蝕刻的SEM圖；圖4示出當使用實施例4的蝕刻劑時側面蝕刻的SEM圖；圖5示出當使用實施例5的蝕刻劑時側面蝕刻的SEM圖；圖6示出當使用實施例6的蝕刻劑時側面蝕刻的SEM圖；圖7示出當使用比較例1的蝕刻劑時側面蝕刻的SEM圖；圖8示出當使用比較例2的蝕刻劑時側面蝕刻的SEM圖；圖9示出當使用實施例1的蝕刻劑時是否產生殘留物的SEM圖；圖10示出當使用比較例1的蝕刻劑時是否產生殘留物的SEM圖；圖11示出當使用實施例1的蝕刻劑時是否損害下層(Cu)的SEM圖；圖12示出當使用比較例2的蝕刻劑時是否損害 下層(Cu)的SEM圖； The above and other objects, features and advantages of the present invention will be from The following is more clearly understood in the detailed description in conjunction with the accompanying drawings, in which: FIG. 1 shows a scanning electron microscope (SEM) image of side etching when the etchant of Example 1 is used; SEM image of side etching when the etchant is used; FIG. 3 shows the SEM image of side etching when the etchant of Example 3 is used; FIG. 4 shows the SEM image of side etching when the etchant of Example 4 is used; SEM image of side etching when the etchant of Example 5 is used; FIG. 6 shows the SEM image of side etching when the etchant of Example 6 is used; FIG. 7 shows side etching when the etchant of Comparative Example 1 is used FIG. 8 shows a SEM image of side etching when the etchant of Comparative Example 2 is used; FIG. 9 shows a SEM image of whether a residue is generated when the etchant of Example 1 is used; FIG. 10 shows when it is used SEM image of whether a residue was generated when the etchant of Comparative Example 1 was used; FIG. 11 illustrates a SEM image of whether the lower layer (Cu) was damaged when the etchant of Example 1 was used; FIG. 12 illustrates the etchant when Comparative Example 2 was used Whether it is damaged SEM image of the lower layer (Cu);
本發明涉及用於蝕刻氧化銦層的蝕刻劑組合物及使用其製作顯示基板的方法。一般地，薄膜電晶體(TFT)陣列面板用作用於獨立驅動在液晶顯示器或有機電致發光顯示器中的各個像素的電路基板。該薄膜電晶體陣列板包括柵極線或用於發射掃描信號的掃描信號線，資料線或用於發射圖像信號的圖像信號線，連接至柵極線和資料線的薄膜電晶體，和連接至薄膜電晶體的像素電極。在製造這種薄膜電晶體陣列面板中，在基板上形成用於柵極線和資料線的金屬層，並且該金屬層然後被蝕刻。此後，在其上形成與連接至薄膜電晶體的像素電極對應的像素層。隨後塗布抗蝕劑並使光致抗蝕劑圖案化。因此，連接至像素層或暴露的源極/漏極線或柵極線可能在使像素圖案化的過程中變形。為了解決這個問題，用於像素的材料必須與用於柵極或源極/漏極的不同。用於像素的材料包括氧化銦層，如ITO或IZO。 The present invention relates to an etchant composition for etching an indium oxide layer and a method for manufacturing a display substrate using the same. Generally, a thin film transistor (TFT) array panel is used as a circuit substrate for independently driving individual pixels in a liquid crystal display or an organic electroluminescence display. The thin film transistor array board includes a gate line or a scanning signal line for transmitting a scanning signal, a data line or an image signal line for transmitting an image signal, a thin film transistor connected to the gate line and the data line, and A pixel electrode connected to a thin film transistor. In manufacturing such a thin film transistor array panel, a metal layer for gate lines and data lines is formed on a substrate, and the metal layer is then etched. Thereafter, a pixel layer corresponding to a pixel electrode connected to the thin film transistor is formed thereon. A resist is then applied and the photoresist is patterned. Therefore, the source / drain lines or gate lines connected to the pixel layer or exposed may be deformed during the patterning of the pixels. To solve this problem, the materials used for the pixels must be different from those used for the gate or source / drain. The material for the pixel includes an indium oxide layer, such as ITO or IZO.
從傳統的用於氧化銦層的蝕刻劑組合物中排除對環境有害的硫酸的研究正在進行。在強酸硫酸被排除的情況下，硝酸的量必須過度增加以提高像素蝕刻速率，並因此由於氮(N)總量的增加造成強加於廢水處理的過度負擔。旨在解決此問題，在本發明中包含磺酸。此外，根據本發明所述的蝕刻劑組合物在蝕刻後不產生殘 留物，並且不損害如Cu，Ti，Mo，或Al製成的下層的蝕刻是可能的。 Research is being conducted to exclude environmentally harmful sulfuric acid from conventional etchant compositions for indium oxide layers. In the case where strong acid sulfuric acid is excluded, the amount of nitric acid must be excessively increased to increase the pixel etching rate, and thus an excessive burden imposed on wastewater treatment due to an increase in the total amount of nitrogen (N). In order to solve this problem, a sulfonic acid is included in the present invention. In addition, the etchant composition according to the present invention does not generate a residue after etching. It is possible to etch without damaging underlying layers such as Cu, Ti, Mo, or Al.
在下文中，將給出本發明的詳細的描述。 Hereinafter, a detailed description of the present invention will be given.
本發明提出用於蝕刻氧化銦層的蝕刻劑組合物，包括：3-10wt%的硝酸，3-10wt%的磺酸，0.1-5wt%的阻蝕劑，0.1-5wt%的環胺化合物，和剩餘部分的水。 The present invention provides an etchant composition for etching an indium oxide layer, including: 3-10 wt% nitric acid, 3-10 wt% sulfonic acid, 0.1-5 wt% corrosion inhibitor, 0.1-5 wt% cyclic amine compound, And the rest of the water.
在本發明中，硝酸為用於蝕刻包含銦的氧化銦層的主要成分，並且優選使用基於蝕刻劑組合物總重量的3-10wt%的量。如果硝酸的量少於3wt%，不可能蝕刻氧化銦層，或蝕刻速率非常低。另一方面，如果其量超過10wt%，總蝕刻速率可能增大，但很難控制過程，或要被處理的廢水量可能由於總氮(N)量的增加而增加。 In the present invention, nitric acid is a main component for etching an indium oxide layer containing indium, and an amount of 3 to 10% by weight based on the total weight of the etchant composition is preferably used. If the amount of nitric acid is less than 3 wt%, it is impossible to etch the indium oxide layer, or the etching rate is very low. On the other hand, if the amount exceeds 10 wt%, the total etching rate may increase, but it is difficult to control the process, or the amount of wastewater to be treated may increase due to an increase in the total nitrogen (N) amount.
在本發明中，像硝酸一樣，磺酸為用於蝕刻包含銦的氧化銦層的主要成分。磺酸可以包括選自由甲基磺酸、對甲苯磺酸、氨基磺酸，和萘酚磺酸組成的組中的至少一個，並且優選使用基於蝕刻劑組合物總重量的3-10wt%的量。如果磺酸的量少於3wt%，由於硝酸的限制使用很難增大氧化銦層的蝕刻速率，並且可能產生來自氧化銦層的殘留物。另一方面，如果硫酸的量超過10wt%，可能增大氧化銦層的蝕刻速率，並可能發生對如由Cu，Al，Mo，或Ti製成的下層的損害增加。 In the present invention, like nitric acid, sulfonic acid is a main component for etching an indium oxide layer containing indium. The sulfonic acid may include at least one selected from the group consisting of methanesulfonic acid, p-toluenesulfonic acid, sulfamic acid, and naphtholsulfonic acid, and an amount of 3 to 10% by weight based on the total weight of the etchant composition is preferably used. . If the amount of sulfonic acid is less than 3 wt%, it is difficult to increase the etching rate of the indium oxide layer due to the limited use of nitric acid, and residues from the indium oxide layer may be generated. On the other hand, if the amount of sulfuric acid exceeds 10 wt%, the etching rate of the indium oxide layer may be increased, and an increase in damage to an underlying layer such as made of Cu, Al, Mo, or Ti may occur.
在本發明中，阻蝕劑可以阻止氧化銦層下方的下層被硝酸和磺酸損害。阻蝕劑可以包括包含銨的化合物，並且優選包括選自由醋酸銨(CH3COONH4)，氨基磺酸銨 (NH4SO3NH2)，苯二酚銨(NH4C6H4(OH)2)，氨基甲酸銨(NH2COONH4)，氯化銨(NH4Cl)，磷酸二氫銨(NH4H2PO4)，甲酸銨(NH4COOH)，碳酸氫銨(NH4HCO3)，檸檬酸銨(H4NO2CCH2C(OH)(CO2NH4)CH2CO2NH4)或(OC(CO2H)(CH2CO2NH4)2))，硝酸銨(NH4NO3)，過硫酸銨((NH4)2S2O8)，氨基磺酸銨(H2NSO3NH4)，和硫酸銨((NH4)2SO4)組成的組中的至少一個，並且優選使用基於蝕刻劑組合物總重量的0.1-5wt%的量。如果阻蝕劑的量少於0.1wt%，很難減少對如由Cu，Al，Mo，或Ti製成的下層產生的損害。另一方面，如果其量超過5wt%，氧化銦層的蝕刻速率可能減小，使其不可能得到所需性能。 In the present invention, the corrosion inhibitor can prevent the underlying layer under the indium oxide layer from being damaged by nitric acid and sulfonic acid. The corrosion inhibitor may include a compound containing ammonium, and preferably includes a member selected from the group consisting of ammonium acetate (CH 3 COONH 4 ), ammonium sulfamate (NH 4 SO 3 NH 2 ), and ammonium hydroquinone (NH 4 C 6 H 4 (OH ) 2 ), ammonium carbamate (NH 2 COONH 4 ), ammonium chloride (NH 4 Cl), ammonium dihydrogen phosphate (NH 4 H 2 PO 4 ), ammonium formate (NH 4 COOH), ammonium bicarbonate (NH 4 HCO 3 ), ammonium citrate (H 4 NO 2 CCH 2 C (OH) (CO 2 NH 4 ) CH 2 CO 2 NH 4 ) or (OC (CO 2 H) (CH 2 CO 2 NH 4 ) 2 )) , Ammonium nitrate (NH 4 NO 3 ), ammonium persulfate ((NH4) 2 S 2 O 8 ), ammonium sulfamate (H 2 NSO 3 NH 4 ), and ammonium sulfate ((NH4) 2 SO 4 ) At least one of the group, and preferably an amount of 0.1 to 5 wt% based on the total weight of the etchant composition. If the amount of the corrosion inhibitor is less than 0.1 wt%, it is difficult to reduce damage to the lower layer such as made of Cu, Al, Mo, or Ti. On the other hand, if its amount exceeds 5 wt%, the etching rate of the indium oxide layer may decrease, making it impossible to obtain the desired performance.
在本發明中，環胺化合物可以阻止氧化銦層下方的下層被硝酸和磺酸損害。環胺化合物可以包括選自由由吡咯類化合物，吡唑類化合物，咪唑類化合物，三唑類化合物，四唑類化合物，五唑類化合物，惡唑類化合物，異惡唑類化合物，噻唑類化合物和異噻唑類化合物組成的組中的至少一個。優選使用的三唑類化合物為苯並三唑，並且四唑類化合物可以包括選自5-氨基四唑，3-氨基四唑和5-甲基四唑中的至少一個。環胺化合物優選使用基於蝕刻劑組合物總重量的0.1-5wt%的量。如果環胺化合物的量少於0.1wt%，很難減少對如由Cu，Al，Mo，或Ti製成的下層產生的損害。另一方面，如果其量超過5wt%，氧化銦層的蝕刻速率可能減小，使其不可能得到所需性能。 In the present invention, the cyclic amine compound can prevent the lower layer under the indium oxide layer from being damaged by nitric acid and sulfonic acid. The cyclic amine compound may include a compound selected from the group consisting of pyrrole compounds, pyrazole compounds, imidazole compounds, triazole compounds, tetrazoles compounds, pentazole compounds, oxazole compounds, isoxazole compounds, thiazole compounds And at least one of the group consisting of isothiazoles. The triazole-based compound preferably used is benzotriazole, and the tetrazole-based compound may include at least one selected from 5-aminotetrazole, 3-aminotetrazole, and 5-methyltetrazole. The cyclic amine compound is preferably used in an amount of 0.1 to 5 wt% based on the total weight of the etchant composition. If the amount of the cyclic amine compound is less than 0.1 wt%, it is difficult to reduce damage to the lower layer such as made of Cu, Al, Mo, or Ti. On the other hand, if its amount exceeds 5 wt%, the etching rate of the indium oxide layer may decrease, making it impossible to obtain the desired performance.
在蝕刻劑組合物中，水為去離子水，其適合於用 在半導體加工中且具有18MΩ/cm或更高的電阻率。基於蝕刻劑組合物的總重量，所使用的水量使得用於蝕刻氧化銦層的蝕刻劑組合物的總量為100wt%。 In the etchant composition, water is deionized water, which is suitable for use with It has a resistivity of 18 MΩ / cm or higher in semiconductor processing. Based on the total weight of the etchant composition, the amount of water used was such that the total amount of the etchant composition used to etch the indium oxide layer was 100 wt%.
本發明所述的蝕刻劑組合物在蝕刻包括具有包括銦的金屬氧化物層的單層的金屬氧化層線方面有效，並且不僅可以用於製作如液晶顯示器之類的平板顯示器，而且還用於製作記憶體半導體顯示板。更進一步地，蝕刻劑組合物可以用於包括具有含銦金屬氧化物層的單層的金屬氧化層線的其他電子設備的製造中。因此，本發明提出使用蝕刻劑組合物製作顯示基板的方法。 The etchant composition according to the present invention is effective in etching a metal oxide layer line including a single layer having a metal oxide layer including indium, and can be used not only for making a flat panel display such as a liquid crystal display but also for Fabricate a memory semiconductor display panel. Furthermore, the etchant composition can be used in the manufacture of other electronic devices including a single-layer metal oxide layer line having an indium-containing metal oxide layer. Therefore, the present invention proposes a method for manufacturing a display substrate using an etchant composition.
在本發明的一實施方式中，製作顯示基板的方法包括：在基板上形成包括柵電極，源極電極和漏極電極的開關元件；在具有所述開關元件的基板上形成氧化銦層；和通過使用包括3-10wt%的硝酸，3-10wt%的磺酸，0.1-5wt%的阻蝕劑，0.1-5wt%的環胺化合物，和剩餘部分的水的蝕刻劑組合物使氧化銦層圖案化形成連接至所述漏極電極的第一像素電極。 In one embodiment of the present invention, a method of manufacturing a display substrate includes: forming a switching element including a gate electrode, a source electrode, and a drain electrode on a substrate; forming an indium oxide layer on a substrate having the switching element; and The indium oxide layer is formed by using an etchant composition including 3-10 wt% nitric acid, 3-10 wt% sulfonic acid, 0.1-5 wt% corrosion inhibitor, 0.1-5 wt% cyclic amine compound, and the remainder of water Patterning to form a first pixel electrode connected to the drain electrode.
在本發明的另一實施方式中，製作顯示基板的方法包括：在基板上形成包括柵電極，源極電極和漏極電極的開關元件；形成直接連接至漏極電極並包括氧化銦層的第一像素電極；使用包括3-10wt%的硝酸，3-10wt%的磺酸，0.1-5wt%的阻蝕劑，0.1-5wt%的環胺化合物，和剩餘部分的水的蝕刻劑組合物去除第一像素電極；和在第一像素電極被去除的基板上形成直接連接至漏極電極的第二像 素電極。 In another embodiment of the present invention, a method for fabricating a display substrate includes: forming a switching element including a gate electrode, a source electrode, and a drain electrode on a substrate; and forming a first element directly connected to the drain electrode and including an indium oxide layer. One pixel electrode; removed using an etchant composition including 3-10 wt% nitric acid, 3-10 wt% sulfonic acid, 0.1-5 wt% corrosion inhibitor, 0.1-5 wt% cyclic amine compound, and remaining water A first pixel electrode; and forming a second image directly connected to the drain electrode on a substrate from which the first pixel electrode is removed 素 electrode.
本發明通過以下實施例、比較例和測試例被詳述，其僅僅用於說明本發明，但本發明不限於這樣的實施例、比較例和測試例，並可以被進行各種修改和改變。 The present invention is described in detail through the following examples, comparative examples, and test examples, which are only used to illustrate the present invention, but the present invention is not limited to such examples, comparative examples, and test examples, and can be variously modified and changed.
使用以下表1中所示的成分的量製備蝕刻劑組合物。 The amount of the components shown in Table 1 below was used to prepare an etchant composition.
將IZO層沉積在玻璃基板(100mm x 100mm)上。此後，製作具有預定圖案(通過光刻在其上形成)的光致 抗蝕劑的樣品。 An IZO layer was deposited on a glass substrate (100 mm x 100 mm). Thereafter, a photoresist having a predetermined pattern (formed thereon by photolithography) is made. Resist sample.
該樣品使用實施例1-6和比較例1-5的各個蝕刻劑組合物進行蝕刻。在蝕刻過程中，使用噴霧蝕刻機(ETCHER(TFT)，由SEMES製造)，蝕刻劑組合物的溫度設置為大約33℃，而且蝕刻IZO層(90s)。測量側蝕長度。結果如下表2所示。 This sample was etched using each of the etchant compositions of Examples 1-6 and Comparative Examples 1-5. During the etching process, a spray etchant (ETCHER (TFT), manufactured by SEMES) was used, the temperature of the etchant composition was set to about 33 ° C, and the IZO layer (90s) was etched. Measure the side etch length. The results are shown in Table 2 below.
將IZO層沉積在玻璃基板(100mm x 100mm)上。此後，製作具有預定圖案(通過光刻在其上形成)的光致抗蝕劑的樣品。 An IZO layer was deposited on a glass substrate (100 mm x 100 mm). Thereafter, a sample of a photoresist having a predetermined pattern (formed thereon by photolithography) was made.
該樣品使用實施例1-6和比較例1-5的各個蝕刻劑組合物蝕刻。在蝕刻過程中，使用噴霧蝕刻機(ETCHER(TFT)，由SEMES製造)，蝕刻劑組合物的溫度設置為大約33℃，而且蝕刻IZO層(90s)。觀察蝕刻過程後露出的基板上是否留下IZO殘留物。結果如下表2所示。 This sample was etched using each of the etchant compositions of Examples 1-6 and Comparative Examples 1-5. During the etching process, a spray etchant (ETCHER (TFT), manufactured by SEMES) was used, the temperature of the etchant composition was set to about 33 ° C, and the IZO layer (90s) was etched. Observe whether IZO residues remain on the exposed substrate after the etching process. The results are shown in Table 2 below.
對於銅層，IZO層和光致抗蝕劑圖案依次形成於基板上的樣品，IZO層使用實施例1-6和比較例1-5的各個蝕刻劑組合物蝕刻10min，並且使用SEM觀察光致抗蝕劑圖案被去除的IZO層的表面和暴露於蝕刻劑的銅層表面。結果如下表2所示。 For a copper layer, a sample in which an IZO layer and a photoresist pattern were sequentially formed on a substrate, the IZO layer was etched for 10 min using each of the etchant compositions of Examples 1-6 and Comparative Examples 1-5, and the photoresistance was observed using SEM The surface of the IZO layer from which the etchant pattern was removed and the surface of the copper layer exposed to the etchant. The results are shown in Table 2 below.
從表2明顯看出，實施例1-6既不產生蝕刻後殘留物又不對下層產生損害，並且發生0.14μm的側面蝕刻。同時，在使用的磺酸量不足的比較例1中，和不含磺酸的比較例3中，氧化銦金屬層(IZO)的蝕刻速率減小，因此使其不可能實現如實施例1-6的側面蝕刻並產生蝕刻後殘留物。更進一步地，在使用過量磺酸的比較例2中，氧化銦金屬層(IZO)的蝕刻速率增大，使其不可能實現所需程度的側面蝕刻並引起對下層的損害。 It is apparent from Table 2 that Examples 1-6 neither produced residues after etching nor damaged the lower layer, and side etching of 0.14 μm occurred. At the same time, in Comparative Example 1 in which the amount of sulfonic acid used was insufficient, and in Comparative Example 3 not containing sulfonic acid, the etching rate of the indium oxide metal layer (IZO) was reduced, thus making it impossible to achieve as in Example 1- The side of 6 is etched and produces post-etch residue. Furthermore, in Comparative Example 2 using an excessive amount of sulfonic acid, the etching rate of the indium oxide metal layer (IZO) was increased, making it impossible to achieve a desired degree of side etching and causing damage to the lower layer.
雖然本發明的優選實施例已公開用於說明目的，但本領域技術人員將理解不背離如所附申請專利範圍中公開的本發明的範圍和精神的各種修改、添加和替換是可能的。 Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible without departing from the scope and spirit of the present invention as disclosed in the scope of the attached application patent.
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