CN105938797A - Etchant composition for etching an indium oxide layer and method of manufacturing a display substrate using the etchant composition - Google Patents
Etchant composition for etching an indium oxide layer and method of manufacturing a display substrate using the etchant composition Download PDFInfo
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- CN105938797A CN105938797A CN201610109143.5A CN201610109143A CN105938797A CN 105938797 A CN105938797 A CN 105938797A CN 201610109143 A CN201610109143 A CN 201610109143A CN 105938797 A CN105938797 A CN 105938797A
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- acid
- etching
- oxide layer
- indium oxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
Discloses are an etchant composition for etching an indium oxide layer and a method of manufacturing a display substrate using the etchant composition, wherein the etchant composition does not include sulfuric acid harmful to the environment, does not generate residue after etching, and does not damage lower layers such as Cu, Ti, Mo or Al in an etching process.
Description
Technical field
The present invention relates to the etching agent composite for etching indium oxide layer and use it to make display base
The method of plate.
Background technology
Generally, display floater includes having the film crystal as the switch element for driving pixel
The display base plate of pipe.This display base plate includes multiple metal pattern, and this metal pattern mainly leads to
Cross and be lithographically formed.This photoetching process is included in and will be etched and formed on thin layer present on substrate
Photoresist oxidant layer, this photoresist oxidant layer exposed and developed to form photoresist pattern, and
Use photoresist pattern as thin layer described in etching barrier etchant etching, therefore make thin layer
Patterning.
During etching thin layer, etchant is used to remove and by photoresist pattern exposed region
The corresponding coating portion in territory, and expose and be removed the lower thin layer below thin layer.Therefore, exposure
Lower thin layer touches etchant, undesirably due to the lower thin layer of etchant infringement.
Potentially include chloroazotic acid class etchant in order to etch the example of the etchant of indium oxide layer (Korea S is special
Profit application publication number 1996-002903), iron chloride class etchant (U.S. Patent number 5,456,795),
With oxalic acid etchant (Korean Patent Publication No 2000-0017470), it is likely to be of heightization
Learn activity, therefore easily damage lower thin layer.In order to solve this problem, disclose (korean patent application
Publication number 2005-0077451) for etching the etching agent composite of indium oxide layer, including as master
Want the sulphuric acid of oxidant and as the nitric acid of cooxidant or perchloric acid.Above-mentioned etching agent composite
May not damage during etching indium oxide layer and comprise aluminum-neodymium (Al-Nd), molybdenum (Mo) and chromium
(Cr) lower thin layer.
But, use above-mentioned etching agent composite to be etched in the lower floor being made up of copper (Cu) and formed
Indium oxide layer in the case of, layers of copper surface is etched the infringement of agent compositions, and due to environment
The use environmental conservation aspect of harmful sulphuric acid is limited.
[reference listing]
[patent documentation]
Patent document: Korean Patent Publication No 1996-002903
U.S. the patent No. 5,456,795
Korean Patent Publication No 2000-0017470
Korean Patent Publication No 2005-0077451
Summary of the invention
Therefore, the present invention is in view of the problem occurred in correlation technique, and the purpose of the present invention is
Even if providing and not using environmentally harmful sulphuric acid, after etching, the most do not produce the etchant group of residue
Compound, it does not damage lower floor (Cu, Al, Mo, Ti), and has the etching characteristic of improvement.
The present invention is provided to etch the etching agent composite of indium oxide layer, including: the nitre of 3-10wt%
Acid, the sulfonic acid of 3-10wt%, the corrosion inhibitor of 0.1-5wt%, the cyclic amine compound of 0.1-5wt%, and surplus
The water that remaining part is divided.
In one embodiment, sulfonic acid can include selecting free pyrovinic acid, p-methyl benzenesulfonic acid, ammonia
At least one in base sulfonic acid, and the group of naphtholsulfonic acid composition.
In another embodiment, corrosion inhibitor can include selecting free ammonium acetate (CH3COONH4),
Ammonium sulfamate (NH4SO3NH2), Benzodiazepines ammonium (NH4C6H4(OH)2), aminoquinoxaline
(NH2COONH4), ammonium chloride (NH4Cl), ammonium dihydrogen phosphate (NH4H2PO4), ammonium formate
(NH4COOH), ammonium hydrogen carbonate (NH4HCO3), ammonium citrate
((H4NO2CCH2C(OH)(CO2NH4)CH2CO2NH4) or
(OC(CO2H)(CH2CO2NH4)2)), ammonium nitrate (NH4NO3), Ammonium persulfate.
((NH4)2S2O8), Ammonium sulfamate (H2NSO3NH4), and ammonium sulfate ((NH4)2SO4)
At least one in the group of composition.
In yet, cyclic amine compound can include selecting free azoles, pyrrole
Azole compounds, glyoxaline compound, triazole class compounds, tetrazole compound, five azoles
Compound, oxazole compounds, isoxazole class compound, thiazole compound and isothiazole class chemical combination
At least one in the group of thing composition.
Additionally, the present invention provides the method making display base plate, including: formed on substrate and include
The switch element of gate electrode, source electrode and drain electrode；At the substrate with described switch element
Upper formation indium oxide layer；With included the nitric acid of 3-10wt% by use, the sulfonic acid of 3-10wt%,
The etchant group of the corrosion inhibitor of 0.1-5wt%, the cyclic amine compound of 0.1-5wt%, and the water of remainder
Compound makes indium oxide layer patterning form the first pixel electrode being connected to described drain electrode.
In one embodiment, sulfonic acid can include selecting free pyrovinic acid, p-methyl benzenesulfonic acid, ammonia
At least one in base sulfonic acid, and the group of naphtholsulfonic acid composition.
Additionally, the present invention provides the method making display base plate, including: formed on substrate and include
The switch element of gate electrode, source electrode and drain electrode；Formation is connected directly to drain electrode also
The first pixel electrode including indium oxide layer；Use the nitric acid including 3-10wt%, the sulphur of 3-10wt%
Acid, the corrosion inhibitor of 0.1-5wt%, the cyclic amine compound of 0.1-5wt%, and the etching of the water of remainder
Agent compositions removes the first pixel electrode；Straight with being formed on the first removed substrate of pixel electrode
It is connected to the second pixel electrode of drain electrode in succession.
In one embodiment, sulfonic acid can include selecting free pyrovinic acid, p-methyl benzenesulfonic acid, ammonia
At least one in base sulfonic acid, and the group of naphtholsulfonic acid composition.
According to the present invention, do not comprise bad environmental for etching the etching agent composite of indium oxide layer
Sulphuric acid, do not produce residue after etching, and do not damage as by Cu, Ti, Mo in etching process,
Or the lower floor that Al makes.
Accompanying drawing explanation
The above and other purpose of the present invention, feature and advantage are by from retouching in detail below in conjunction with accompanying drawing
More clearly it is understood in stating, wherein:
Fig. 1 illustrates the scanning electron microscope of side etching when using the etchant of embodiment 1
(SEM) figure；
Fig. 2 illustrates the SEM figure of the side etching when using the etchant of embodiment 2；
Fig. 3 illustrates the SEM figure of the side etching when using the etchant of embodiment 3；
Fig. 4 illustrates the SEM figure of the side etching when using the etchant of embodiment 4；
Fig. 5 illustrates the SEM figure of the side etching when using the etchant of embodiment 5；
Fig. 6 illustrates the SEM figure of the side etching when using the etchant of embodiment 6；
Fig. 7 illustrates the SEM figure of the side etching when using the etchant of comparative example 1；
Fig. 8 illustrates the SEM figure of the side etching when using the etchant of comparative example 2；
Fig. 9 illustrates the SEM figure whether producing residue when using the etchant of embodiment 1；
Figure 10 illustrates the SEM figure whether producing residue when using the etchant of comparative example 1；
Figure 11 illustrates the SEM figure whether damaging lower floor (Cu) when using the etchant of embodiment 1；
Figure 12 illustrates the SEM figure whether damaging lower floor (Cu) when using the etchant of comparative example 2；
Detailed description of the invention
The present invention relates to the etching agent composite for etching indium oxide layer and use it to make display base
The method of plate.Usually, thin film transistor (TFT) (TFT) arraying bread board is with acting on independent driving at liquid
The circuit substrate of each pixel in crystal display or display of organic electroluminescence.This film crystal
Pipe array board includes gate line or for launching the scan signal line of scanning signal, data wire or be used for
Launch the image signal line of picture signal, be connected to the thin film transistor (TFT) of gate line and data wire, and
It is connected to the pixel electrode of thin film transistor (TFT).In manufacturing this thin-film transistor display panel,
Formed for gate line and the metal level of data wire on substrate, and then this metal level is etched.
Hereafter, it is formed on the pixel layer corresponding with the pixel electrode being connected to thin film transistor (TFT).Subsequently
Painting erosion resistant agent also makes patterning photoresist.Therefore, be connected to the source electrode of pixel layer or exposure/
Drain line or gate line may deform during making pattern of pixels.In order to solve this problem,
Material for pixel must be different from for grid or source/drain.Material bag for pixel
Include indium oxide layer, such as ITO or IZO.
Environmentally harmful sulphuric acid is got rid of from the etching agent composite being traditionally used for indium oxide layer
Research is carried out.In the case of strong acid sulphuric acid is excluded, the amount of nitric acid must excessively increase with
Improve pixel etch-rate, and therefore force at waste water process owing to the increase of nitrogen (N) total amount causes
Undue burden.Aim to solve the problem that this problem, comprise sulfonic acid in the present invention.Additionally, according to this
Bright described etching agent composite does not the most produce residue, and does not damage such as Cu, Ti, Mo,
Or the etching of lower floor that Al makes is possible.
Hereinafter, the detailed description of the present invention will be provided.
The present invention proposes the etching agent composite for etching indium oxide layer, including: the nitre of 3-10wt%
Acid, the sulfonic acid of 3-10wt%, the corrosion inhibitor of 0.1-5wt%, the cyclic amine compound of 0.1-5wt%, and surplus
The water that remaining part is divided.
In the present invention, nitric acid is the main component of the indium oxide layer comprising indium for etching, and
The amount of 3-10wt% of based on etching agent composite gross weight is preferably used.If the amount of nitric acid is less than
3wt%, it is impossible to etching indium oxide layer, or etch-rate is the lowest.On the other hand, if its amount
More than 10wt%, total etch-rate may increase, but is difficult to control process, or to be processed giving up
The water yield is likely to be due to increase that total nitrogen (N) measures and increases.
In the present invention, as nitric acid, sulfonic acid is the master of the indium oxide layer comprising indium for etching
Want composition.Sulfonic acid can include selecting free pyrovinic acid, p-methyl benzenesulfonic acid, sulfamic acid, and naphthalene
At least one in the group of phenol sulfonic acid composition, and be preferably used based on etching agent composite gross weight
The amount of 3-10wt%.If the amount of sulfonic acid is less than 3wt%, it is difficult to increase owing to the restriction of nitric acid uses
The etch-rate of big indium oxide layer, and the residue from indium oxide layer may be produced.The opposing party
Face, if the amount of sulphuric acid is more than 10wt%, may increase the etch-rate of indium oxide layer, and may
The infringement to the lower floor being such as made up of Cu, Al, Mo, or Ti is occurred to increase.
In the present invention, corrosion inhibitor can stop the lower floor below indium oxide layer to be damaged by nitric acid and sulfonic acid
Evil.Corrosion inhibitor can include the compound comprising ammonium, and preferably includes to select free ammonium acetate
(CH3COONH4), Ammonium sulfamate (NH4SO3NH2), Benzodiazepines ammonium (NH4C6H4(OH)2),
Aminoquinoxaline (NH2COONH4), ammonium chloride (NH4Cl), ammonium dihydrogen phosphate (NH4H2PO4),
Ammonium formate (NH4COOH), ammonium hydrogen carbonate (NH4HCO3), ammonium citrate
(H4NO2CCH2C(OH)(CO2NH4)CH2CO2NH4) or
(OC(CO2H)(CH2CO2NH4)2)), ammonium nitrate (NH4NO3), Ammonium persulfate.
((NH4)2S2O8), Ammonium sulfamate (H2NSO3NH4), and ammonium sulfate ((NH4)2SO4)
At least one in the group of composition, and it is preferably used based on etching agent composite gross weight
The amount of 0.1-5wt%.If the amount of corrosion inhibitor is less than 0.1wt%, it is difficult to reduce to such as by Cu, Al, Mo,
Or the infringement that the lower floor made of Ti produces.On the other hand, if its amount is more than 5wt%, indium oxide layer
Etch-rate may reduce so that it is desired properties can not be obtained.
In the present invention, cyclic amine compound can stop the lower floor below indium oxide layer by nitric acid and sulphur
Acid infringement.Cyclic amine compound can include choosing freely by azoles, pyrazole compound,
Glyoxaline compound, triazole class compounds, tetrazole compound, five azole compounds, oxazole class
Compound, isoxazole class compound, in the group of thiazole compound and different thiazoles compound composition
At least one.The triazole class compounds being preferably used is benzotriazole, and tetrazole compound
At least one in 5-Aminotetrazole, 3-Aminotetrazole and 5-methyl tetrazolium can be included.Cyclammonium
Compound is preferably used the amount of 0.1-5wt% based on etching agent composite gross weight.If cycloamination
The amount of compound is less than 0.1wt%, is difficult to reduce and produces the lower floor being such as made up of Cu, Al, Mo, or Ti
Raw infringement.On the other hand, if its amount may subtract more than 5wt%, the etch-rate of indium oxide layer
Little so that it is desired properties can not be obtained.
In etching agent composite, water is deionized water, its be suitable for use in semiconductor machining and
There is 18M Ω/cm or higher resistivity.Gross weight based on etching agent composite, is used
The water yield makes the total amount of the etching agent composite for etching indium oxide layer be 100wt%.
Etching agent composite of the present invention includes having the metal oxide layer including indium in etching
The burning layer line aspect of monolayer effective, and can be not only used for making such as liquid crystal display
Etc flat faced display, but also be used for making memory semiconductor display panel.Further,
Etching agent composite may be used for the metal oxide layer including having the monolayer of indium-containing metal oxide skin(coating)
In the manufacture of other electronic equipments of line.Therefore, the present invention proposes to use etching agent composite to make
The method of display base plate.
In one embodiment of the present invention, the method making display base plate includes: shape on substrate
Become to include the switch element of gate electrode, source electrode and drain electrode；There is described switch element
Substrate on formed indium oxide layer；With included the nitric acid of 3-10wt% by use, the sulphur of 3-10wt%
Acid, the corrosion inhibitor of 0.1-5wt%, the cyclic amine compound of 0.1-5wt%, and the etching of the water of remainder
Agent compositions makes indium oxide layer patterning form the first pixel electrode being connected to described drain electrode.
In another embodiment of the present invention, the method making display base plate includes: on substrate
Formation includes the switch element of gate electrode, source electrode and drain electrode；Formation is connected directly to Lou
Pole electrode also includes the first pixel electrode of indium oxide layer；Use the nitric acid including 3-10wt%,
The sulfonic acid of 3-10wt%, the corrosion inhibitor of 0.1-5wt%, the cyclic amine compound of 0.1-5wt%, and remainder
The etching agent composite of the water divided removes the first pixel electrode；Removed with at the first pixel electrode
The second pixel electrode being connected directly to drain electrode is formed on substrate.
The present invention is described by following example, comparative example and test case, and it is merely illustrative
The present invention, but the invention is not restricted to such embodiment, comparative example and test case, it is possible to entered
The various modifications and changes of row.
Embodiment 1-6 and the preparation of comparative example 1-5: etching agent composite
The amount using the composition shown in table 1 below prepares etching agent composite.
Table 1
* MSA: pyrovinic acid
* p-TSA: p-methyl benzenesulfonic acid
* A.S: ammonium sulfate
* BTA: benzotriazole
Test case: etching characteristic is assessed
(1) assessment of the side etching of IZO monolayer
IZO is deposited upon on glass substrate (100mm x 100mm).Hereafter, making has
The sample of the photoresist of predetermined pattern (being formed on by photoetching).
This sample uses each etching agent composite of embodiment 1-6 and comparative example 1-5 to be etched.
In etching process, use spraying etching machine (ETCHER (TFT), SEMES manufacture),
The temperature of etching agent composite is set to about 33 DEG C, and etches IZO layer (90s).Measure
Lateral erosion length.Result is as shown in table 2 below.
(2) evaluation of residue
IZO is deposited upon on glass substrate (100mm x 100mm).Hereafter, making has
The sample of the photoresist of predetermined pattern (being formed on by photoetching).
This sample uses each etching agent composite etching of embodiment 1-6 and comparative example 1-5.In erosion
During quarter, use spraying etching machine (ETCHER (TFT), SEMES manufacture), etching
The temperature of agent compositions is set to about 33 DEG C, and etches IZO layer (90s).Observe etching
IZO residue whether is left on the substrate exposed after process.Result is as shown in table 2 below.
(3) evaluation to lower floor's infringement
The sample that layers of copper, IZO layer and photoresist pattern are sequentially formed on substrate, IZO
Layer uses each etching agent composite etching 10min of embodiment 1-6 and comparative example 1-5, and makes
Observe the surface of photoresist pattern removed IZO layer with SEM and be exposed to the copper of etchant
Layer surface.Result is as shown in table 2 below.
Table 2
| Numbering | The side etching (μm) of IZO monolayer | Post-etch residue | Infringement to lower floor (Cu) |
| Embodiment 1 | 0.14 | Nothing | Nothing |
| Embodiment 2 | 0.14 | Nothing | Nothing |
| Embodiment 3 | 0.14 | Nothing | Nothing |
| Embodiment 4 | 0.14 | Nothing | Nothing |
| Embodiment 5 | 0.14 | Nothing | Nothing |
| Embodiment 6 | 0.14 | Nothing | Nothing |
| Comparative example 1 | 0.03 | Have | Nothing |
| Comparative example 2 | 0.28 | Nothing | Have |
| Comparative example 3 | 0.04 | Have | Nothing |
| Comparative example 4 | 0.05 | Nothing | Nothing |
| Comparative example 5 | 0.30 | Nothing | Have |
From table 2 it is evident that embodiment 1-6 neither produces post-etch residue the most not to lower floor's generation
Infringement, and there is the side etching of 0.14 μm.Meanwhile, in the comparison that the sulfonic acid amount used is not enough
In example 1, and without in the comparative example 3 of sulfonic acid, the etch-rate of Indium sesquioxide. metal level (IZO) reduces,
Therefore make it impossible to the side etching of realization such as embodiment 1-6 and produce post-etch residue.More
Further, in the comparative example 2 using excess sulfonic acid, the etching speed of Indium sesquioxide. metal level (IZO)
Rate increases so that it is can not realize the side etching of desirable degree and cause the infringement to lower floor.
Although the preferred embodiments of the present invention are disclosed for illustration purposes, but those skilled in the art
It will be appreciated that repair without departing substantially from the various of the scope and spirit of the present invention as disclosed in claims
It is possible for changing, adding and replacing.
Claims (8)
1. for etching the etching agent composite of indium oxide layer, including:
The nitric acid of 3-10wt%,
The sulfonic acid of 3-10wt%,
The corrosion inhibitor of 0.1-5wt%,
The cyclic amine compound of 0.1-5wt%, and
The water of remainder.
Etching agent composite the most according to claim 1, wherein said sulfonic acid includes that choosing is freely
At least one in pyrovinic acid, p-methyl benzenesulfonic acid, sulfamic acid, and the group of naphtholsulfonic acid composition.
Etching agent composite the most according to claim 1, wherein said corrosion inhibitor includes being selected from
By CH3COONH4,NH4SO3NH2,NH4C6H4(OH)2,NH2COONH4,NH4Cl,
NH4H2PO4,NH4COOH,NH4HCO3,
H4NO2CCH2C(OH)(CO2NH4)CH2CO2NH4,OC(CO2H)(CH2CO2NH4)2,
NH4NO3,(NH4)2S2O8,H2NSO3NH4, and (NH4)2SO4At least one in the group of composition.
Etching agent composite the most according to claim 1, wherein said cyclic amine compound includes
Select free azoles, pyrazole compound, glyoxaline compound, triazole class compounds,
Tetrazole compound, five azole compounds, oxazole compounds, isoxazole class compound, thiazole
At least one in the group of compounds and different thiazoles compound composition.
5. the method making display base plate, including:
Substrate is formed the switch element including gate electrode, source electrode and drain electrode；
The substrate with described switch element is formed indium oxide layer；
And
The nitric acid of 3-10wt% is included by use, the sulfonic acid of 3-10wt%, the corrosion inhibitor of 0.1-5wt%,
The cyclic amine compound of 0.1-5wt%, and the etching agent composite of the water of remainder makes indium oxide layer figure
Caseization forms the first pixel electrode being connected to described drain electrode.
Method the most according to claim 5, wherein said sulfonic acid include selecting free pyrovinic acid,
At least one in p-methyl benzenesulfonic acid, sulfamic acid, and the group of naphtholsulfonic acid composition.
7. the method making display base plate, including:
Substrate is formed the switch element including gate electrode, source electrode and drain electrode；
Formed and be connected directly to described drain electrode and include the first pixel electrode of indium oxide layer；
Use and include the nitric acid of 3-10wt%, the sulfonic acid of 3-10wt%, the corrosion inhibitor of 0.1-5wt%,
The cyclic amine compound of 0.1-5wt%, and the etching agent composite removal described first of the water of remainder
Pixel electrode；And
The described first removed substrate of pixel electrode is formed and is connected directly to described drain electrode
The second pixel electrode.
Method the most according to claim 7, wherein said sulfonic acid include selecting free pyrovinic acid,
At least one in p-methyl benzenesulfonic acid, sulfamic acid, and the group of naphtholsulfonic acid composition.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0030989 | 2015-03-05 | ||
| KR1020150030989A KR102259146B1 (en) | 2015-03-05 | 2015-03-05 | Etchant composition for etching an indium oxide layer and method of manufacturing a display substrate using the etchant composition |
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| Publication Number | Publication Date |
|---|---|
| CN105938797A true CN105938797A (en) | 2016-09-14 |
| CN105938797B CN105938797B (en) | 2020-04-17 |
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| CN201610109143.5A Active CN105938797B (en) | 2015-03-05 | 2016-02-26 | Etchant composition for etching indium oxide layer and method for manufacturing display substrate using same |
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| KR (1) | KR102259146B1 (en) |
| CN (1) | CN105938797B (en) |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536963A (en) * | 2019-01-30 | 2019-03-29 | 上海镁印科技有限公司 | A kind of application of carbamate compound in magnesium alloy etching additive |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102579768B1 (en) * | 2018-10-05 | 2023-09-19 | 솔브레인 주식회사 | Etchant composition and method for methal layer etching method using the same |
| US10636666B1 (en) | 2018-10-11 | 2020-04-28 | Samsung Display Co., Ltd. | Etchant and method for manufacturing display device using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20070056340A (en) * | 2005-11-29 | 2007-06-04 | 동우 화인켐 주식회사 | Etching solution of indium oxide film and etching method thereof |
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| CN101649202A (en) * | 2008-08-14 | 2010-02-17 | 关东化学株式会社 | Etching bath composition for transparent conductive film |
| CN101886266A (en) * | 2009-05-14 | 2010-11-17 | 三星电子株式会社 | The method of etching reagent and use etching reagent manufacturing array substrate |
| US20130178023A1 (en) * | 2010-01-26 | 2013-07-11 | Samsung Display Co., Ltd. | Etching solution composition and method of etching using the same |
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| KR20160107761A (en) | 2016-09-19 |
| CN105938797B (en) | 2020-04-17 |
| TWI677560B (en) | 2019-11-21 |
| KR102259146B1 (en) | 2021-06-01 |
| TW201638303A (en) | 2016-11-01 |
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