CN104513983B - Copper and molybdenum contain the etchant of film - Google Patents
Copper and molybdenum contain the etchant of film Download PDFInfo
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- CN104513983B CN104513983B CN201410489479.XA CN201410489479A CN104513983B CN 104513983 B CN104513983 B CN 104513983B CN 201410489479 A CN201410489479 A CN 201410489479A CN 104513983 B CN104513983 B CN 104513983B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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Abstract
The present invention relates to a kind of etchants, when etching the film containing copper and molybdenum, even if the thickness of copper film can accelerate the speed of copper film etching if thicker, molybdenum are maintained to contain the higher etching speed of film, prevented bad with line segment.The etchant is the etchant that the copper containing hydrogen peroxide and persulfate as oxidant and molybdenum contain film, which is characterized in that relative to 100 parts by weight of the hydrogen peroxide, the persulfate containing 0.5~10 parts by weight.
Description
Technical field
The present invention relates to the etching solution combinations that a kind of copper-molybdenum film or copper-molybdenum contain film (hereinafter referred to as " copper/molybdenum contains film ")
Object contains the etchant of film in particular for the copper and molybdenum of TFT-LCD electrodes for display.
Background technology
The microcircuits such as semiconductor device, TFT-LCD, OLED are closed by aluminium, aluminium alloy, copper and the copper formed on substrate
On the insulating films such as the conductive metals such as gold film or silicon dioxide film, silicon nitride film, photoresist is equably smeared, then passes through quarter
Figuratum film is imaged after carrying out light irradiation, required patterned photo glue is made to be imaged, using dry-etching or wet etching,
On the metal film or insulating film of photoresist lower part after display pattern, stripping removes a series of photoetching such as unwanted photoresist
Engineering and complete.
Aluminium chromium wiring phase in copper alloy, with conventional art used in the grid and data metal wiring of giant display
Than impedance is low and does not have environmental problem.Copper exist with the adhesion of glass substrate and insulating film it is relatively low, be easily diffused as silicon oxide film
The problems such as, so being used as lower film metal usually using titanium, molybdenum etc..
It is special in South Korea as the relevant technologies of workable etchant when etching and molybdenum contain film simultaneously
It is disclosed in sharp Publication the 2006-0064881st, Patent Laid the 2006-0099089th etc. and is with hydrogen peroxide
Copper/the molybdenum on basis contains the etching solution of film.But these etching solutions, when etching is repeated, the metal in the etching solution contains
Amount increases, and can lose the stone inscriptions characteristics such as etching cone angle, etch bias and etching straightness, contain to reduce the metal in etching solution
Amount, then need high amount of etching solution, this is problem of the prior art.
Further, the high image quality of display and enlargement promote the thickness of the copper metal for wiring increased, and pursue
High image quality requires pixel to become smaller, and wiring amplitude increases, it is desirable that enlargement just needs to reduce the resistance of wiring.In this regard, having to
Increase the thickness of the copper metal for wiring.
The thickness of copper metal thickens, and the time for etching engineering will be elongated, can reduce production efficiency, to improve etching speed
Degree, can cause with line segment it is bad, also cause problems.
Look-ahead technique document Prior Art
Patent document
(patent document 1) patent disclosure the 2006-0064881st (on June 14th, 2006 is open)
(patent document 2) patent disclosure the 2006-0099089th (disclosure on the 19th of September in 2006)
Invention content
The purpose of the present invention is to provide one kind when etch copper/molybdenum contains film, even if can if increasing the thickness of copper metal
To maintain higher etching speed, ensure engineering time, does not match the etchant of the undesirable misgivings of line segment.
In order to achieve the object of the present invention, copper of the invention and molybdenum contain the etchant of film, the etching solution group
It is the etchant that the copper containing hydrogen peroxide and persulfate as oxidant and molybdenum contain film to close object, and feature exists
In, relative to 100 parts by weight of the hydrogen peroxide, the persulfate containing 0.5~10 parts by weight.
Preferred embodiment according to the present invention, relative to the total weight of composition, the peroxidating containing 15~30 weight %
Hydrogen, the persulfate of 0.05~3 weight %, the etching inhibitor of 0.1~3 weight %, the chelating agent of 0.1~5 weight %, 0.01
The compound selected from one or more of the group being made of inorganic acid, organic acid and its salt of~2 weight %, 0.01~2 weight
The fluoride of % is measured, and the water for making composition total weight reach 100 weight %.
Sulphur of the persulfate in the group being made of sodium peroxydisulfate, potassium peroxydisulfate, ammonium persulfate and its mixture
Hydrochlorate.
The inhibitor is selected from by furans, thiophene, pyrroles, oxazole, imidazoles, pyrazoles, 1,2,4- triazoles, tetrazolium, 5- ammonia
Base tetrazolium, methyl tetrazolium, piperazine, methyl piperazine, hydroxyethyl piperazine, pyrrolidines and alloxan, benzofuran, benzothiophene, indoles,
Benzimidazole, benzopyrazoles, Aminotetrazole, methylbenzotrazole, hydrogen methylbenzotrazole, methylol benzotriazole and its mixing
The group that object is constituted.
The chelating agent is the compound containing carboxylic acid group or phosphate in the molecule together with amino.
In addition, the chelating agent is selected from by iminodiacetic acid, nitrilotriacetic acid, ethylenediamine tetra-acetic acid, diethylenetriamine five
Acetic acid, aminotrimethylenephosphonic acid, 1- hydroxy ethylene -1,1- diphosphonic acid, ethylenediamine tetraacetic methylene phosphoric acid, diethylenetriamines five
The group that methylene phosphate, alanine, glutamic acid, aminobutyric acid and glycine and its mixture are constituted.
The additive is selected from by the inorganic acid containing sulfuric acid, nitric acid, phosphoric acid, hydrochloric acid and hydrofluoric acid, contains acetic acid, first
Acid, butyric acid, citric acid, glycolic, oxalic acid, malonic acid, valeric acid, propionic acid, tartaric acid, gluconic acid, glycine, succinic acid have
The group that machine acid and its salt and its mixture are constituted.
The etching additive is selected from by potassium acid sulfate, niter cake, sodium sulphate, potassium sulfate, ammonium sulfate and its mixture
Sulfate in the group of composition.
The fluoride is to dissociate F- or HF2 -Compound.
The fluoride is selected from by hafnium, sodium fluoride, potassium fluoride, aluminum fluoride, boron fluoric acid, ammonium fluoride, ammonium acid fluoride, hydrogen fluoride
The group that sodium, potassium bifluoride and ammonium fluoroborate and its mixture are constituted.
The water is the deionized water that resistivity is 18M Ω/㎝ or more.
Further include additive, the additive be selected from by hydrogen peroxide stabilizer, etching stabilizer, glass etching inhibitor and
The group that its mixture is constituted.
Other embodiments for the present invention are described in detail in following specific implementation mode.
The beneficial effects of the invention are as follows：Etchant according to the present invention, to for TFT-LCD electrodes for display
When copper/molybdenum contains film and is etched, copper film etching speed can be maintained in 140/s or more, molybdenum contain film etching speed be 15/s with
On, it can control and match the undesirable generation of line segment.
Description of the drawings
Fig. 1 is the etchant using embodiment of the present invention 1, after being etched to copper/molybdenum film, uses scanning electricity
The photo for the test piece section that sub- microscope is observed；
Fig. 2 is to use scanning electron after being etched to copper/molybdenum film using the etchant of comparative example 1 of the present invention
The photo for the test piece section that microscope is observed；
Fig. 3 is to use scanning electron after being etched to copper/molybdenum film using the etchant of comparative example 3 of the present invention
The photo for the test piece section that microscope is observed.
Specific implementation mode
The present invention can there are many embodiments of form to embody, and embodiment in this specification is only for specifically
The feature of the bright present invention, the present invention is not limited thereto, as long as being made within the scope of the technological thought of the present invention and spiritual principles
Change, replacement, deformation etc. belong within the protection category of the present invention.In the explanation of the present invention, for known technology, it is
It prevents its explanation from mixing meat and fish dishes core of the invention technical characteristic, does not elaborate.
Hereinafter, copper/molybdenum of the present invention will be described in detail embodiment contains the etchant of film.
The etchant of the present invention can contain film by etch copper/molybdenum simultaneously.Here " copper/molybdenum alloy film " refers to copper film
With molybdenum alloy film, molybdenum alloy is the alloy of molybdenum and various metals, preferably the alloy with titanium, tantalum, chromium, neodymium, nickel, indium or tin, more
Preferably with the alloy of titanium.
The etchant of the present invention is that the copper containing hydrogen peroxide and persulfate as oxidant and molybdenum contain
The etchant of film, relative to 100 parts by weight of the hydrogen peroxide, the persulfate containing 0.5~10 parts by weight.
In hydrogen peroxide etchant, in order to improve the etching speed of the thick copper wiring of etching, hydrogen peroxide conduct
Individual oxidant, when exceeding 30 weight %, it is difficult to control the decomposition reaction of etching solution, and be difficult to eliminate and be generated because matching line segment
It is bad.In the present invention, while two kinds of oxidants are used, while improving etching speed, it is possible to reduce bad with line segment.
Preferred embodiment according to the present invention, relative to the total weight of composition, the peroxidating containing 15~30 weight %
Hydrogen, the persulfate of 0.05~3 weight %, the etching inhibitor of 0.1~3 weight %, the chelating agent of 0.1~5 weight %, 0.01
The compound selected from one or more of the group being made of inorganic acid, organic acid and its salt of~2 weight %, 0.01~2 weight
The fluoride of % is measured, and the water for making composition total weight reach 100 weight %.
Next, each constituent for containing the etchant of film to copper/molybdenum of embodiment of the present invention carries out
It is described in detail.
A) hydrogen peroxide
In the etchant of the present invention, hydrogen peroxide is used as the primary oxidizers of copper, molybdenum or molybdenum alloy.
Above-mentioned hydrogen peroxide, relative to etchant total weight, content can be 15 to 30 weight %.Less than 15 weights
When measuring %, the oxidation of copper molybdenum alloy is not enough, etching is cannot achieve；When beyond 30 weight %, etching speed is too fast, it is difficult to
Control the progress of engineering.Etching speed appropriate can prevent etch residue and etching bad, reduce etch bias, can easily be accommodated
Engineering, the content for this being preferably hydrogen peroxide are 20 to 30 weight %.
B) persulfate
Etchant according to the present invention, persulfate be selected from by sodium peroxydisulfate, potassium peroxydisulfate, ammonium persulfate and its
Sulfate in the group that mixture is constituted, however, it is not limited to this.
Hydrogen peroxide of the content of persulfate relative to 100 parts by weight, when less than 0.5 parts by weight, etching speed, that is, copper
Film etching speed is 140/s or more, and the etching speed that molybdenum contains film is difficult to reach 15/s；When beyond 10 parts by weight, it can cause to match
The bad increase of line segment.Thus one, preferably relative to 100 parts by weight of hydrogen peroxide, the content of persulfate is 0.5 to 10 weight
Measure part, more preferably 0.5 to 8 parts by weight or 0.5 to 7 parts by weight.
C) inhibitor is etched
In the etchant of the present invention, copper, molybdenum or molybdenum alloy etching speed is adjusted in etching inhibitor, reduces erosion
Deviation is carved, engineering efficiency is improved, there is the etching outline of appropriate etching cone angle.
Specifically, above-mentioned etching inhibitor can be the miscellaneous original containing at least more than one in aerobic, sulphur and nitrogen in the molecule
The complex chemical compound of monocyclic heteroatomic compound or monocyclic hetero atom and phenyl ring the condensation structure of son.Above-mentioned monocycle
Formula heteroatomic compound can be the heterocyclic aromatic compound or heterocyclic aliphatic for the monocyclic structure that carbon is 1 to 10
Close object.Specifically, it can be the heterocycles such as furans, thiophene, pyrroles, oxazole, imidazoles, pyrazoles, 1,2,4- triazoles, tetrazolium, benzofuran
Aromatic compound；The heterocyclic aliphatic compounds such as piperazine, methyl piperazine, hydroxyethyl piperazine, pyrrolidines and alloxan；Not
It is confined to this.In addition, heteroatomic monocyclic hetero atom and phenyl ring containing at least more than one in aerobic, sulphur and nitrogen in the molecule
The complex chemical compound for being condensed structure can be piperazine, methyl piperazine, hydroxyethyl piperazine, pyrrolidines and alloxan etc., not limit to
In this.Also a kind of or and be used in mixed way two or more above compounds in the above compound that can be used alone.
Total weight of the above-mentioned etching inhibitor relative to etchant, content are 0.1 to 3 weight %, preferably
0.1 to 2 weight %.When etching inhibitor less than 0.1 weight %, it is difficult to etching speed is adjusted, the adjusting of etching cone angle can be reduced,
Cause engineering less efficient, cannot achieve volume production；If exceeding 3 weight %, etching speed, inefficiencies can be slowed down.
D) chelating agent
Chelating agent in the etchant of the present invention forms chela with the generation copper in etching process and molybdenum alloy ion
It closes, and makes its deactivation, to inhibit the decomposition reaction of hydrogen peroxide in etching solution.If in the etchant of the present invention
Chelating agent is not added, then during etching progress, the metal ion being acidified cannot achieve deactivation, can promote to lose
The hydrogen peroxide carved in liquid composition carries out decomposition reaction, can cause to generate heat and explode.
Chelating agent is the compound containing carboxylic acid group or phosphate in the molecule together with amino.It can be iminodiacetic acid (salt)
Acid, nitrilotriacetic acid, ethylenediamine tetra-acetic acid, diethylene triamine pentacetic acid (DTPA), aminotrimethylenephosphonic acid, 1- hydroxy ethylenes -1,1-
Diphosphonic acid, ethylenediamine tetraacetic methylene phosphoric acid, diethylenetriamine pentamethylene phosphoric acid, alanine, glutamic acid, aminobutyric acid and sweet ammonia
Acid etc. can be one of which, can also be the compound for being used in mixed way two of which or more.
Relative to the total weight of entire combination object, preferably its content is 0.1 to 5 weight %, more preferably 0.1 to 3 weight
Measure %.If when less than 0.1 weight %, the amount of metal ion that can carry out deactivation is seldom, to make its inhibit hydrogen peroxide into
The efficiency of row decomposition reaction weakens；If when beyond 5 weight %, extra chelating can be formed, the effect of metal ion deactivation is made
Fruit is bad, influences engineering efficiency.
E) additive is etched
Etching additive plays the role of assisted oxidation copper, molybdenum and molybdenum alloy, can improve etching outline.The etching addition
Agent can be inorganic acid, organic acid or its salt, can be one kind, can also be used in mixed way two or more.
Specifically, inorganic acid is sulfuric acid, nitric acid, phosphoric acid, hydrochloric acid and hydrofluoric acid；Organic acid be acetic acid, formic acid, butyric acid,
Citric acid, glycolic, oxalic acid, malonic acid, valeric acid, propionic acid, tartaric acid, gluconic acid, glycine, succinic acid；Above-mentioned salt is
Refer to the salt of above-mentioned organic acid and inorganic acid.
Especially, sulfate is potassium acid sulfate, niter cake, sodium sulphate, potassium sulfate, ammonium sulfate etc..
The content of above-mentioned etching additive relative to etchant total amount be 0.1 to 5 weight %, preferably 0.1 to 3
Weight % when less than 0.1 weight %, improves having little effect for etching outline using etching solution；It is excessive when beyond 5 weight %
Etching additive can cause etching characteristic to reduce.
F) fluoride
The etching of molybdenum alloy can be improved when copper molybdenum alloy etches simultaneously in fluoride in the etchant of the present invention
Speed reduces tail length, removal generated molybdenum alloy residue in etching.The tail portion of molybdenum alloy can reduce bright if increasing
Darkness can cause electric short circuit, wiring bad and shading value reduces if residue remains in substrate and lower film, so
Have to removal residue.
The fluoride of the present invention is to dissociate F- or HF2 -The compound of ion can be hafnium, sodium fluoride, potassium fluoride, fluorination
Aluminium, boron fluoric acid, ammonium fluoride, ammonium acid fluoride, sodium bifluoride, potassium bifluoride and ammonium fluoroborate etc., can also use simultaneously it is a kind of or
Two or more above-mentioned fluorides.
Relative to the total weight of entire combination object, fluoride is preferably that its content is 0.01 to 2 weight %, more preferably
0.01 to 1 weight %.If when less than 0.01 weight %, the residue of molybdenum alloy cannot be removed effectively, if when beyond 2 weight %, meeting
Etch lower film.
G) water
There is no particular limitation for water used in the etchant of the present invention, it is preferable to use deionized water, more
The use of the specific impedance value after deionization is gone in water is preferably the deionized water of 18M Ω/㎝ or more.
The content of above-mentioned water makes the total weight of etchant reach 100 weight %.
H) other additives
In copper/molybdenum of the present invention contains the etchant of film, in order to improve etching performance, it can also select and be used for
Any one additive in etchant.The additive can be dioxygen water additive, etching stabilizer, glass etching suppression
Preparation etc..It can be one of which or two or more be used in mixed way.
Above-mentioned hydrogen peroxide stabilizer be etch engineering be repeated when, what the metal ion content in etching solution increased
In the case of, it can control hydrogen peroxide dissociation reaction.Specifically, phosphate, dihydroxy alcohols, amine can be used in hydrogen peroxide stabilizer
Or mixtures thereof class.
When etchant includes hydrogen peroxide stabilizer, relative to the total weight of composition, content is 0.1 to 5
Weight %, preferably 0.5 to 3 weight %.When hydrogen peroxide stabilizer is less than 0.1 weight %, the effect of hydroperoxidation is controlled
Little, when exceeding 5 weight %, etching performance reduces.
With above-mentioned composition the present invention etchant when etch copper/molybdenum contains film, can improve etch bias,
Etch the etching characteristics such as cone angle and etching straightness.It therefore, can be by above-mentioned etchant for constituting liquid crystal display TFT
Electrode on metal wiring material, when containing film using copper/molybdenum, etchant can be used to form sheet metal wiring diagram
Case.
The engraving method for containing film using copper/molybdenum of upper etchant can be carried out according to usual way.
Specifically, including：The step of copper/molybdenum contains film is being deposited on substrate；Contain formation photoresist material on film in copper/molybdenum
Patterned step is carried out after material；Using above-mentioned etchant, copper/molybdenum to forming patterning photoresist film contains film
The step of being etched.Here, the laminated layer sequence that the copper/molybdenum formed on substrate contains film is not particularly limited.
In addition, above-mentioned engraving method further includes between substrate and copper/molybdenum contain film, i.e., between substrate and copper film or substrate
And between molybdenum contains film, formed semiconductor structure object the step of.Above-mentioned semiconductor structure object can be liquid crystal display device, plasma
The display devices such as display panel semiconductor structure object.Specifically, above-mentioned semiconductor structure object is conductive film, noncrystalline or more
One layer or more of film in the films such as crystalloid, the semiconductor structure object are manufactured according to usual way.
Next, the embodiment party of the present invention will be described in detail the person of ordinary skill in the field present invention easy to implement
Formula, the present invention can be implemented with variform, it is not limited to embodiments described herein.
<Embodiment 1 to 4 and comparative example 1 to 4>
Component content recorded in following list 1 mixes each ingredient, and the embodiment of the present invention 1 to 4 and comparative example 1 to 4 is made
Composition.
【Table 1】
In table 1 above, APS:Ammonium persulfate (ammoniumpersulfate), ATZ：5- Aminotetrazoles (5-
Aminotetrazole), IDA：Iminodiacetic acid (iminodiacetic acid), SHS:Niter cake (Sodium
hydrogen sulfate),ABF:The content unit of ammonium acid fluoride (Ammonium bifluoride), each ingredient is parts by weight.
＜ etching performances test ＞
In order to evaluate the effect of etching solution of the present invention, it is sequentially depositing the copper film that thickness is 4000 and 300 on the glass substrate
With molybdenum alloy film, photoetching engineering is then carried out, pattern is formed, test piece is made.
Using the etchant of the etchant and comparative example of embodiment 1 to 4 and comparative example 1 to 4, can spray
It is carried out on the device (Mini-etcher ME-001) of painting.Using scanning electron microscope, (group of Hitachi manufactures, S- after etching
4800) etching of the etch features of copper-molybdenum alloy film is observed.
According to the type of copper/molybdenum alloy film etching solution, to copper/molybdenum of 5 × 5cm sizes of copper/molybdenum film local excessive etching
After alloy film test piece etching, match line segment number with scanning electron microscope observation.
In order to measure etch bias, the etching period of measurement is controlled and is carried out at 30%over etch.
In order to evaluate stability, the copper powder of 5000ppm is dissolved in each etching solution, maintenance 48 is small under 32 degrees Celsius
When, measuring temperature variation.
The results are shown in Table 2 for it.
【Table 2】
As seen from the above table, the etchant of the embodiment of the present invention 1 to 4 and comparative example 1 to 4 is compared,
In etching speed, etch bias, whether rises etc. with line segment, temperature and all show remarkable result.
Especially, comparative example 1 uses each hydrogen peroxide as individual oxidant, is understood in comparative example 2
When the content of oxide sulfate agent is too small, required etching speed is cannot achieve, comparative example 3 is persulfate oxidation agent content mistake
More situations, comparative example 4 can not be used there is a situation where bad with line segment when content of hydrogen peroxide is excessive.
Fig. 1 is the etchant using embodiment of the present invention 1, after being etched to copper/molybdenum film, uses scanning electricity
The photo for the test piece section that sub- microscope is observed；Fig. 2 is the etchant using comparative example 1 of the present invention, to copper/molybdenum film
After being etched, the photo for the test piece section that scanning electron microscope is observed is used.It can be seen that the etching solution combination of comparative example 1
Object cannot achieve sufficient etching.
Fig. 3 is to use scanning electron after being etched to copper/molybdenum film using the etchant of comparative example 3 of the present invention
The photo for the test piece section that microscope is observed.As shown in figure 3, using comparative example 3 composition when, etching speed can be observed
Match line segment when good.
By above-mentioned experimental result it is found that the present invention etchant when etch copper/molybdenum contains film, can with compared with
High etching speed etches the progress of engineering stability to realize.
The feature of the present invention is described in detail above by embodiment, those skilled in the art's palpus
Know, only to illustrate the invention, technology of the invention is not limited to embodiment to the above embodiment.Protection scope of the present invention
It is limited in the interest field of the present invention.
Claims (9)
1. a kind of copper and molybdenum contain the etchant of film, which is characterized in that relative to the total weight of composition, contain：
The hydrogen peroxide of 15~30 weight %,
The persulfate of 0.05~3 weight %,
The etching inhibitor of 0.1~3 weight %,
The chelating agent of 0.1~5 weight %,
0.01~2 weight %'s includes the etching additive selected from one or more of potassium acid sulfate and niter cake compound,
The fluoride of 0.01~2 weight %, and
Composition total weight is set to become the water of 100 weight %；
Relative to the hydrogen peroxide of 100 parts by weight, contain 1.8 parts by weight to the persulfate of 6 parts by weight.
2. copper according to claim 1 and molybdenum contain the etchant of film, which is characterized in that the persulfate is
Selected from the group being made of sodium peroxydisulfate, potassium peroxydisulfate, ammonium persulfate and its mixture.
3. copper according to claim 1 and molybdenum contain the etchant of film, which is characterized in that the etching inhibitor
Selected from furans, thiophene, pyrroles,Azoles, imidazoles, pyrazoles, 1,2,4- triazoles, tetrazolium, 5- Aminotetrazoles, methyl tetrazolium, piperazine,
Methyl piperazine, hydroxyethyl piperazine, pyrrolidines, alloxan, benzofuran, benzothiophene, indoles, benzimidazole, benzopyrazoles, methyl
The group that benzotriazole, hydrogen methylbenzotrazole, methylol benzotriazole and its mixture are constituted.
4. copper according to claim 1 and molybdenum contain the etchant of film, which is characterized in that the chelating agent be
Intramolecular is together with amino, the compound containing carboxylic acid group or phosphate.
5. copper according to claim 1 and molybdenum contain the etchant of film, which is characterized in that the chelating agent is selected from
By iminodiacetic acid, nitrilotriacetic acid, ethylenediamine tetra-acetic acid, diethylene triamine pentacetic acid (DTPA), aminotrimethylenephosphonic acid, 1- hydroxyls
Ethylidene -1,1- diphosphonic acid, ethylenediamine tetraacetic methylene phosphoric acid, diethylenetriamine pentamethylene phosphoric acid, alanine, glutamic acid, ammonia
The group that base butyric acid, glycine and its mixture are constituted.
6. copper according to claim 1 and molybdenum contain the etchant of film, which is characterized in that the fluoride be from
Solve F-Or HF2 -Compound.
7. copper according to claim 1 and molybdenum contain the etchant of film, which is characterized in that the fluorine compounds choosing
From HF, NaF, KF, AIF3、HBF4、NH4F、NH4HF2、NaHF2、KHF2、NH4BF4And its group that mixture is constituted.
8. copper according to claim 1 and molybdenum contain the etchant of film, which is characterized in that the water is resistivity
Value is the deionized water of 18M Ω/cm or more.
9. copper according to claim 1 and molybdenum contain the etchant of film, which is characterized in that also include additive,
The additive is selected from hydrogen peroxide stabilizer, etches stabilizer, the group that glass etching inhibitor and its mixture are constituted.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20130118885A KR20150043569A (en) | 2013-10-07 | 2013-10-07 | Etching composition for copper and molibdenum containing film |
| KR10-2013-0118885 | 2013-10-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104513983A CN104513983A (en) | 2015-04-15 |
| CN104513983B true CN104513983B (en) | 2018-09-04 |
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| CN201410489479.XA Active CN104513983B (en) | 2013-10-07 | 2014-09-22 | Copper and molybdenum contain the etchant of film |
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| Country | Link |
|---|---|
| KR (1) | KR20150043569A (en) |
| CN (1) | CN104513983B (en) |
| TW (1) | TWI560319B (en) |
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| JP6516214B2 (en) * | 2015-03-20 | 2019-05-22 | パナソニックＩｐマネジメント株式会社 | Etching solution for multilayer film, etching solution and etching method |
| CN105060727B (en) * | 2015-07-31 | 2018-03-02 | 安徽和润特种玻璃有限公司 | A kind of high transmittance anti-dazzle glas etching solution and preparation method thereof |
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| TWI560319B (en) | 2016-12-01 |
| KR20150043569A (en) | 2015-04-23 |
| TW201514342A (en) | 2015-04-16 |
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