TWI560319B - Etching composition for copper and molibdenum containing film - Google Patents

Etching composition for copper and molibdenum containing film

Info

Publication number
TWI560319B
TWI560319B TW103133055A TW103133055A TWI560319B TW I560319 B TWI560319 B TW I560319B TW 103133055 A TW103133055 A TW 103133055A TW 103133055 A TW103133055 A TW 103133055A TW I560319 B TWI560319 B TW I560319B
Authority
TW
Taiwan
Prior art keywords
molibdenum
copper
containing film
etching composition
etching
Prior art date
Application number
TW103133055A
Other languages
Chinese (zh)
Other versions
TW201514342A (en
Inventor
Sehoon Kim
Boyeon Lee
Eunkyung Lee
Seulki Kim
Heechun Eun
Hyoseop Shin
Original Assignee
Enf Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enf Technology Co Ltd filed Critical Enf Technology Co Ltd
Publication of TW201514342A publication Critical patent/TW201514342A/en
Application granted granted Critical
Publication of TWI560319B publication Critical patent/TWI560319B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW103133055A 2013-10-07 2014-09-24 Etching composition for copper and molibdenum containing film TWI560319B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20130118885A KR20150043569A (en) 2013-10-07 2013-10-07 Etching composition for copper and molibdenum containing film

Publications (2)

Publication Number Publication Date
TW201514342A TW201514342A (en) 2015-04-16
TWI560319B true TWI560319B (en) 2016-12-01

Family

ID=52789849

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103133055A TWI560319B (en) 2013-10-07 2014-09-24 Etching composition for copper and molibdenum containing film

Country Status (3)

Country Link
KR (1) KR20150043569A (en)
CN (1) CN104513983B (en)
TW (1) TWI560319B (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6516214B2 (en) * 2015-03-20 2019-05-22 パナソニックＩｐマネジメント株式会社 Etching solution for multilayer film, etching solution and etching method
CN105060727B (en) * 2015-07-31 2018-03-02 安徽和润特种玻璃有限公司 A kind of high transmittance anti-dazzle glas etching solution and preparation method thereof
KR20170056279A (en) * 2015-11-13 2017-05-23 동우 화인켐 주식회사 Etchant composition for silver
CN106835138B (en) * 2015-12-03 2019-02-19 东友精细化工有限公司 Etchant, array substrate for display device and its manufacturing method
CN105386056A (en) * 2015-12-04 2016-03-09 宁波东盛集成电路元件有限公司 Metal etching agent used for etching copper-containing metal layer and preparation method for metal etching agent
CN107587135A (en) * 2016-07-08 2018-01-16 深圳新宙邦科技股份有限公司 A kind of molybdenum aluminium-molybdenum etching liquid
CN106637209A (en) * 2016-12-29 2017-05-10 深圳市华星光电技术有限公司 Etching solution composition and metal film etching method using same
CN108359987A (en) * 2017-01-26 2018-08-03 易案爱富科技有限公司 Etch combination
CN107604360B (en) * 2017-09-14 2019-10-15 江阴江化微电子材料股份有限公司 A kind of selectivity copper corrosion liquid and application
CN109594079B (en) * 2017-09-30 2021-02-12 深圳新宙邦科技股份有限公司 Molybdenum-aluminum common etching solution and etching method
CN107761098A (en) * 2017-11-24 2018-03-06 江苏中德电子材料科技有限公司 A kind of new copper etchant solution of panel industry environment-friendly type high stability
CN107761099A (en) * 2017-11-24 2018-03-06 江苏中德电子材料科技有限公司 A kind of panel industry high stability copper etchant solution
CN108004550A (en) * 2017-12-29 2018-05-08 深圳市华星光电技术有限公司 Etching solution and its application for copper/molybdenum film layer
KR102048495B1 (en) * 2018-03-27 2019-11-25 김용석 Etching solution for msap substrate
CN109576717A (en) * 2018-11-29 2019-04-05 广东工业大学 Move back copper agent and its preparation method and application in a kind of permalloy silk table face
CN111041489B (en) * 2020-01-03 2021-10-15 易安爱富(武汉)科技有限公司 Molybdenum/titanium alloy film etching solution composition and application thereof
CN113106453A (en) * 2020-02-26 2021-07-13 江苏艾森半导体材料股份有限公司 Etching solution composition and application thereof
CN111647888A (en) * 2020-05-27 2020-09-11 湖北兴福电子材料有限公司 Copper etching solution with long etching life
CN112030165B (en) * 2020-08-28 2022-05-20 武汉迪赛新材料有限公司 Copper-molybdenum layer etching solution for TFT-LCD (thin film transistor-liquid Crystal display) process
CN112064032B (en) * 2020-09-11 2022-04-01 武汉迪赛新材料有限公司 Supplementary liquid capable of prolonging service life of hydrogen peroxide etching liquid
CN114438495A (en) * 2020-11-03 2022-05-06 宣城亨旺新材料有限公司 Metal etching solution and metal etching method
CN114318340B (en) * 2021-12-22 2023-09-29 惠州达诚微电子材料有限公司 Etching solution composition and preparation method thereof
CN115595154B (en) * 2022-08-31 2024-08-13 湖北兴福电子材料股份有限公司 SiGe and Si selective etching solution

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200916605A (en) * 2007-10-08 2009-04-16 Basf Electronic Materials Taiwan Ltd Etchant compositions and etching method for metals Cu/Mo
CN101684557A (en) * 2008-09-26 2010-03-31 韩国泰科诺赛美材料株式会社 Copper, copper/molybdenum, or copper/molybdenum alloy electrode etching solution for use in liquid crystal display system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100064361A (en) * 2007-10-08 2010-06-14 바스프 에스이 Etchant compositions and etching method for metals cu/mo
KR101531688B1 (en) * 2008-11-12 2015-06-26 솔브레인 주식회사 Etchant for transparent conductive ITO films
CN102102206A (en) * 2009-12-18 2011-06-22 鑫林科技股份有限公司 Metal etching liquid composition and etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200916605A (en) * 2007-10-08 2009-04-16 Basf Electronic Materials Taiwan Ltd Etchant compositions and etching method for metals Cu/Mo
CN101684557A (en) * 2008-09-26 2010-03-31 韩国泰科诺赛美材料株式会社 Copper, copper/molybdenum, or copper/molybdenum alloy electrode etching solution for use in liquid crystal display system

Also Published As

Publication number Publication date
KR20150043569A (en) 2015-04-23
CN104513983A (en) 2015-04-15
TW201514342A (en) 2015-04-16
CN104513983B (en) 2018-09-04

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