CN107761099A - A kind of panel industry high stability copper etchant solution - Google Patents
A kind of panel industry high stability copper etchant solution Download PDFInfo
- Publication number
- CN107761099A CN107761099A CN201711193749.2A CN201711193749A CN107761099A CN 107761099 A CN107761099 A CN 107761099A CN 201711193749 A CN201711193749 A CN 201711193749A CN 107761099 A CN107761099 A CN 107761099A
- Authority
- CN
- China
- Prior art keywords
- hydrogen peroxide
- high stability
- etchant solution
- complexing agent
- industry high
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The present invention relates to a kind of panel industry high stability copper etchant solution, includes the composition of following mass percent, hydrogen peroxide 5 30%, tartaric acid 1 7%, hydrogen peroxide bleaching stabilizer 0.05 0.7%, copper ion complexing agent 0.3 1%, molybdenum ion complexing agent 0.1 0.5%, surplus is pure water.Etch-rate is stable, effect is good, noresidue.
Description
Technical field
The present invention relates to liquid crystal display film transistor（TFT）Industry electronic chemicals technical field, and in particular to one
Kind panel industry high stability copper etchant solution.
Background technology
, it is necessary to carry out list processing to copper metal base material using etching solution in the manufacturing processes such as liquid crystal panel.Worked copper gold
The technical examples that category film is allowed to be formed such as wiring micro structured pattern include wet etch techniques and dry etching technology, wherein, it is wet
Etching is to use chemical reagent, and the photoetching agent pattern formed by phototype on metal film surfaces is used as carrying out
The shielding of chemical etching, and metal film is formed pattern.Compared with dry etching technology, wet etch techniques economical interest, it is not necessary to
Expensive device, but use relatively cheap chemical reagent.Using this wet etch techniques, large area can be equably etched
Substrate, while production efficiency is high in the unit interval.
Existing copper etchant solution main component is hydrogen peroxide and hydrofluoric acid, and the problem of being primarily present has：Hydrogen peroxide easily divides
Solution, the service life of copper etchant solution can be shortened, when tenor reaches 10000ppm in etching solution, etching solution failure, it is necessary to
Carry out scrapping processing, and improve hydrogen peroxide concentration, there can be higher potential safety hazard.
The United States Patent (USP) of Patent No. 7056648 provides a kind of process of isotropic etching copper and copper alloy,
Selected etchant contain oxidant, copper and copper alloy at least one weak complexing agent and a kind of mixture of strong complexing agent,
And the pH value of water and etchant is 6 to 12.Smooth copper or copper alloy surface can be obtained using mentioned reagent, still,
The concentration of copper complex ion of the above method in etch copper or the technical process of copper alloy in etchant and solution
PH value can all change, and cause etch-rate unstable, and etching is uneven, and can cause environmental pollution and the wasting of resources.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of etch-rate stabilization, effect for above-mentioned prior art
Good, the panel industry high stability copper etchant solution of noresidue.
Technical scheme is used by the present invention solves the above problems：A kind of panel industry high stability copper etchant solution, bag
Include the composition of following mass percent：
Hydrogen peroxide 5-30%
Hydrofluoric acid 1-7%
Hydrogen peroxide bleaching stabilizer 0.05-0.7%
Ammonium persulfate 0.05-0.5%
Copper ion complexing agent 0.3-1%
Molybdenum ion complexing agent 0.1-0.5%
Surplus is pure water.
The hydrogen peroxide bleaching stabilizer is Na2SiO3, non-silicon class hydrogen peroxide bleaching stabilizer（ZJ-C01 hydrogen peroxide stabilizers, village outstanding person's chemical industry
Production）.
The copper ion complexing agent is sulfosalicylic acid, xylenol orange, the one or more of thiosulfate.
The molybdenum ion complexing agent is tetraacethyl diaminoethanes.
During preparation, above-mentioned each material is put into blender in proportion, is well mixed.
Preferably, a kind of panel industry high stability copper etchant solution, is made up of the composition of following mass percent：Hydrogen peroxide
20%、HF 5%、Na2SiO30.1%th, ammonium persulfate 0.2%, sulfosalicylic acid 0.5%, tetraacethyl diaminoethanes 0.2%, surplus are
Pure water, each component sum are 100%.
Preferably, a kind of panel industry high stability copper etchant solution, is made up of the composition of following mass percent：Hydrogen peroxide
25%th, HF 2%, ZJ-C01 hydrogen peroxide stabilizers, village outstanding person's Chemical Manufacture 0.08%, ammonium persulfate 0.1%, thiosulfate 0.3%,
Tetraacethyl diaminoethanes 0.4%, surplus are pure water, and each component sum is 100%.
Preferably, a kind of panel industry high stability copper etchant solution, is made up of the composition of following mass percent：Hydrogen peroxide
10%、HF 7%、Na2SiO30.05%th, ammonium persulfate 0.5%, xylenol orange 0.8%, tetraacethyl diaminoethanes 0.3%, surplus are
Pure water, each component sum are 100%.
Preferably, a kind of panel industry high stability copper etchant solution, is made up of the composition of following mass percent：Hydrogen peroxide
30%、HF 7%、Na2SiO30.07%th, ammonium persulfate 0.3%, xylenol orange 1%, tetraacethyl diaminoethanes 0.5%, surplus are pure
Water, each component sum are 100%.
Compared with prior art, the advantage of the invention is that：
The present invention is using hydrogen peroxide is used, and it is extremely easy in decomposition so that its service life is short, is ensured by using hydrogen peroxide bleaching stabilizer
The stability of hydrogen peroxide, but hydrogen peroxide bleaching stabilizer adds, reaction speed can reduce, not reach default reaction speed, and its is clear
Except difficulty, its dosage is suitably reduced, by adding ammonium persulfate, it reacts the present invention with copper ion, slowly discharges oxonium ion,
So as to improve reaction speed；Be applied in combination by hydrogen peroxide, hydrogen peroxide bleaching stabilizer, ammonium persulfate, reach improve reaction speed and
Stable effect, caused metal ion in course of reaction, by adding copper ion complexing agent, molybdenum ion complexing agent is gone in time
Remove so that the content of metal ion reduces in etching solution, improves the usage time of etching solution.
Brief description of the drawings
Fig. 1 is that the etching solution of embodiment 1 uses rear electron microscope.
Fig. 2 is that the etching solution of embodiment 2 uses rear electron microscope.
Fig. 3 is that the etching solution of embodiment 3 uses rear electron microscope.
Fig. 4 is that the etching solution of embodiment 4 uses rear electron microscope.
Fig. 5 is that the etching solution of comparative example 1 uses rear electron microscope.
Fig. 6 is that the etching solution of comparative example 2 uses rear electron microscope.
Fig. 7 is that the etching solution of comparative example 3 uses rear electron microscope.
Embodiment
The present invention is described in further detail with reference to embodiments.
A kind of panel industry high stability copper etchant solution, is mixed by the composition of following mass percent：
Hydrogen peroxide 5-30%
HF 1-7%
Hydrogen peroxide bleaching stabilizer 0.05-0.7%
Ammonium persulfate 0.05-0.5%
Copper ion complexing agent 0.3-1%
Molybdenum ion complexing agent 0.1-0.5%
Surplus is pure water.
During preparation, above-mentioned each material is put into blender in proportion, is well mixed.
It is different from specific composition according to matching, embodiment 1-4 and comparative example 1-4 are enumerated respectively, and its result are carried out pair
Than.
Each embodiment and comparative example composition proportion such as table 1.
Table 1
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 | Contrast 1 | Contrast 2 | Contrast 3 |
| Hydrogen peroxide 20% | Hydrogen peroxide 25% | Hydrogen peroxide 10% | Hydrogen peroxide 30% | Hydrogen peroxide 20% | Hydrogen peroxide 20% | Hydrogen peroxide 20% |
| HF 5% | HF 2% | HF 7% | HF 7% | HF 5% | HF 5% | HF 5% |
| Na2SiO3 0.1% | ZJ-C01 hydrogen peroxide stabilizers, village outstanding person's Chemical Manufacture 0.08% | Na2SiO3 0.05% | Na2SiO3 0.7% | -- | Na2SiO3 0.1% | Na2SiO3 0.1% |
| Ammonium persulfate 0.2% | Ammonium persulfate 0.1% | Ammonium persulfate 0.5% | Ammonium persulfate 0.3% | Ammonium persulfate 0.2% | Ammonium persulfate 0.2% | -- |
| Sulfosalicylic acid 0.5% | Thiosulfate 0.3% | Xylenol orange 0.8% | Xylenol orange 1% | Sulfosalicylic acid 0.5% | -- | Sulfosalicylic acid 0.5% |
| Tetraacethyl diaminoethanes 0.2% | Tetraacethyl diaminoethanes 0.4% | Tetraacethyl diaminoethanes 0.3% | Tetraacethyl diaminoethanes 0.5% | Tetraacethyl diaminoethanes 0.2% | Tetraacethyl diaminoethanes 0.2% | Tetraacethyl diaminoethanes 0.2% |
| Surplus is pure water | Surplus is pure water | Surplus is pure water | Surplus is pure water | Surplus is pure water | Surplus is pure water | Surplus is pure water |
Embodiment 1-4 etching solutions are shown in Fig. 1-4 using rear electron microscope, and phase etch effect is good, sharpness of border, easy cleaning, production process
Medium velocity is fast and stable reaction, and controllable-rate is safe, noresidue；It is corrosion-free to glass and etching solution usage time is grown.
Comparative example 1：
Without using oxygen bleaching class stabilizer in embodiment 1.After the content increase of hydrogen peroxide, danger uprises, the difficult control of reaction speed.
Etching solution is bad using rear etch effect, and obscure boundary is clear, referring to Fig. 5.
Comparative example 2：
Without using copper ion complexing agent in embodiment 1.During caused metal ion it is more, etching solution easily fails, and uses the longevity
Life shortens.Etching solution is bad using rear etch effect, and obscure boundary is clear, referring to Fig. 6.
Comparative example 3：
Without using ammonium persulfate in embodiment 1.Reaction speed is slow, and etch effect is poor, follow-up difficult cleaning, there is residual.Etching solution
Bad using rear etch effect, obscure boundary is clear, referring to Fig. 6.
In addition to the implementation, it is all to use equivalent transformation or equivalent replacement present invention additionally comprises there is other embodiment
The technical scheme that mode is formed, it all should fall within the scope of the hereto appended claims.
Claims (4)
- A kind of 1. panel industry high stability copper etchant solution, it is characterised in that：It includes the composition of following mass percent：Hydrogen peroxide 5-30%Hydrofluoric acid 1-7%Hydrogen peroxide bleaching stabilizer 0.05-0.7%Ammonium persulfate 0.05-0.5%Copper ion complexing agent 0.3-1%Molybdenum ion complexing agent 0.1-0.5%Surplus is pure water.
- 2. panel industry high stability copper etchant solution according to claim 1, it is characterised in that：The hydrogen peroxide bleaching stabilizer is Na2SiO3, non-silicon class hydrogen peroxide bleaching stabilizer.
- 3. panel industry high stability copper etchant solution according to claim 1, it is characterised in that：The copper ion complexing agent For sulfosalicylic acid, xylenol orange, the one or more of thiosulfate.
- 4. panel industry high stability copper etchant solution according to claim 1, it is characterised in that：The molybdenum ion complexing agent For tetraacethyl diaminoethanes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711193749.2A CN107761099A (en) | 2017-11-24 | 2017-11-24 | A kind of panel industry high stability copper etchant solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711193749.2A CN107761099A (en) | 2017-11-24 | 2017-11-24 | A kind of panel industry high stability copper etchant solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107761099A true CN107761099A (en) | 2018-03-06 |
Family
ID=61276879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711193749.2A Pending CN107761099A (en) | 2017-11-24 | 2017-11-24 | A kind of panel industry high stability copper etchant solution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107761099A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111334299A (en) * | 2020-03-26 | 2020-06-26 | 成都中电熊猫显示科技有限公司 | Etching liquid and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101886265A (en) * | 2009-05-15 | 2010-11-17 | 关东化学株式会社 | Etching solution for copper-containing multilayer film |
| CN104513981A (en) * | 2013-10-02 | 2015-04-15 | 易安爱富科技有限公司 | Etching liquid composition for copper-and-molybdenum-containing film |
| CN104513983A (en) * | 2013-10-07 | 2015-04-15 | 易安爱富科技有限公司 | Etching liquid composition for copper-and-molybdenum-containing film |
| CN106367755A (en) * | 2015-07-24 | 2017-02-01 | 东友精细化工有限公司 | Etchant composition and manufacturing method of an array substrate for liquid crystal display |
| CN106637209A (en) * | 2016-12-29 | 2017-05-10 | 深圳市华星光电技术有限公司 | Etching solution composition and metal film etching method using same |
-
2017
- 2017-11-24 CN CN201711193749.2A patent/CN107761099A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101886265A (en) * | 2009-05-15 | 2010-11-17 | 关东化学株式会社 | Etching solution for copper-containing multilayer film |
| CN104513981A (en) * | 2013-10-02 | 2015-04-15 | 易安爱富科技有限公司 | Etching liquid composition for copper-and-molybdenum-containing film |
| CN104513983A (en) * | 2013-10-07 | 2015-04-15 | 易安爱富科技有限公司 | Etching liquid composition for copper-and-molybdenum-containing film |
| CN106367755A (en) * | 2015-07-24 | 2017-02-01 | 东友精细化工有限公司 | Etchant composition and manufacturing method of an array substrate for liquid crystal display |
| CN106637209A (en) * | 2016-12-29 | 2017-05-10 | 深圳市华星光电技术有限公司 | Etching solution composition and metal film etching method using same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111334299A (en) * | 2020-03-26 | 2020-06-26 | 成都中电熊猫显示科技有限公司 | Etching liquid and preparation method thereof |
| CN111334299B (en) * | 2020-03-26 | 2021-11-30 | 成都中电熊猫显示科技有限公司 | Etching liquid and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103666478B (en) | A kind of acid ammonium fluoride etching solution of non-ionic type low surface tension | |
| JP4815406B2 (en) | Silicon oxide film selective wet etching solution and etching method | |
| TWI431162B (en) | Etchant composition for patterning circuits in thin film transistor-liquid crystal devices | |
| KR101216651B1 (en) | etching composition | |
| WO2018055801A1 (en) | Dilute chemical solution-producing apparatus and dilute chemical solution-producing method | |
| CN114350367B (en) | Low-foam etching solution with uniform etching | |
| KR100865881B1 (en) | Surface treating fluid for fine processing of multi-component glass substrate | |
| CN108033686A (en) | A kind of etching liquid for thinning glass substrate | |
| CN112592775B (en) | Control separation blade cleaning solution and cleaning method | |
| EP0004285A1 (en) | A method of plasma etching silica at a faster rate than silicon in an article comprising both | |
| CN103880293A (en) | Etching liquid for secondary reinforcement of glass as well as preparation method and application thereof | |
| JP4778716B2 (en) | Etching composition | |
| CN107761099A (en) | A kind of panel industry high stability copper etchant solution | |
| CN103208421A (en) | Method for improving etching selection ratio of silicon nitride layer to oxide layer | |
| CN110079803A (en) | Etching liquid, etch combinations liquid and lithographic method | |
| US10109499B2 (en) | Etching method and substrate | |
| CN107761098A (en) | A kind of new copper etchant solution of panel industry environment-friendly type high stability | |
| JP2007142409A (en) | Transparent conductive film etching composition | |
| KR20030011564A (en) | Etching method and etching liquid | |
| CN109930153A (en) | Etching liquid and etching device | |
| JPWO2003081658A1 (en) | Etching solution composition | |
| CN102627972A (en) | Formula of GaAs semiconductor material etching liquid | |
| JPH11121419A (en) | Chemical for treating semiconductor substrate and treatment method thereof | |
| CN114411151A (en) | Copper-molybdenum metal film etching solution, application method thereof and display panel | |
| JP2004315887A (en) | Etching liquid composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180306 |
|
| RJ01 | Rejection of invention patent application after publication |