CN102177219A - Etching solution for a transparent conductive film - Google Patents
Etching solution for a transparent conductive film Download PDFInfo
- Publication number
- CN102177219A CN102177219A CN2009801399302A CN200980139930A CN102177219A CN 102177219 A CN102177219 A CN 102177219A CN 2009801399302 A CN2009801399302 A CN 2009801399302A CN 200980139930 A CN200980139930 A CN 200980139930A CN 102177219 A CN102177219 A CN 102177219A
- Authority
- CN
- China
- Prior art keywords
- nesa coating
- film
- etching
- etching reagent
- acetate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 148
- 239000003112 inhibitor Substances 0.000 claims abstract description 25
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000003153 chemical reaction reagent Substances 0.000 claims description 71
- 239000011248 coating agent Substances 0.000 claims description 57
- 238000000576 coating method Methods 0.000 claims description 57
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 15
- -1 iron ion Chemical class 0.000 claims description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 13
- 230000003750 conditioning effect Effects 0.000 claims description 13
- 150000004820 halides Chemical class 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 12
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 claims description 8
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 8
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 claims description 6
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 5
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 5
- 239000005695 Ammonium acetate Substances 0.000 claims description 5
- 235000019257 ammonium acetate Nutrition 0.000 claims description 5
- 229940043376 ammonium acetate Drugs 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229940071125 manganese acetate Drugs 0.000 claims description 5
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 claims description 5
- RSEBUVRVKCANEP-UHFFFAOYSA-N 2-pyrroline Chemical compound C1CC=CN1 RSEBUVRVKCANEP-UHFFFAOYSA-N 0.000 claims description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 4
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 claims description 4
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 4
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 claims description 4
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 4
- 229910001413 alkali metal ion Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 4
- 150000001413 amino acids Chemical class 0.000 claims description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- ZVJHJDDKYZXRJI-UHFFFAOYSA-N pyrroline Natural products C1CC=NC1 ZVJHJDDKYZXRJI-UHFFFAOYSA-N 0.000 claims description 4
- 150000003335 secondary amines Chemical class 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 239000001632 sodium acetate Substances 0.000 claims description 4
- 229960004249 sodium acetate Drugs 0.000 claims description 4
- 235000017281 sodium acetate Nutrition 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 claims description 4
- 239000004246 zinc acetate Substances 0.000 claims description 4
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 claims description 3
- 239000011654 magnesium acetate Substances 0.000 claims description 3
- 235000011285 magnesium acetate Nutrition 0.000 claims description 3
- 229940069446 magnesium acetate Drugs 0.000 claims description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims description 2
- NVMAITWQERIPJB-UHFFFAOYSA-N 1-phenyltetrazol-5-amine Chemical compound NC1=NN=NN1C1=CC=CC=C1.NC1=NN=NN1C1=CC=CC=C1 NVMAITWQERIPJB-UHFFFAOYSA-N 0.000 claims description 2
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004160 Ammonium persulphate Substances 0.000 claims description 2
- TTWYBNLBVHMTBZ-UHFFFAOYSA-N CN1N=NN=C1N.CN1N=NN=C1N Chemical compound CN1N=NN=C1N.CN1N=NN=C1N TTWYBNLBVHMTBZ-UHFFFAOYSA-N 0.000 claims description 2
- 208000006558 Dental Calculus Diseases 0.000 claims description 2
- YYRZLMUGWJRZSK-UHFFFAOYSA-O NC1=NN=NN1C1=CC=CC2=CC=CC=C12.NC=1N=NN[N+]1C1=CC=CC2=CC=CC=C12 Chemical compound NC1=NN=NN1C1=CC=CC2=CC=CC=C12.NC=1N=NN[N+]1C1=CC=CC2=CC=CC=C12 YYRZLMUGWJRZSK-UHFFFAOYSA-O 0.000 claims description 2
- GQIIFFOTIPKTHB-UHFFFAOYSA-O NN1N=NN=C1N.N[N+]=1NN=NC1N Chemical compound NN1N=NN=C1N.N[N+]=1NN=NC1N GQIIFFOTIPKTHB-UHFFFAOYSA-O 0.000 claims description 2
- 241001274216 Naso Species 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 239000004159 Potassium persulphate Substances 0.000 claims description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 2
- YBCVMFKXIKNREZ-UHFFFAOYSA-N acoh acetic acid Chemical compound CC(O)=O.CC(O)=O YBCVMFKXIKNREZ-UHFFFAOYSA-N 0.000 claims description 2
- BIGPRXCJEDHCLP-UHFFFAOYSA-N ammonium bisulfate Chemical compound [NH4+].OS([O-])(=O)=O BIGPRXCJEDHCLP-UHFFFAOYSA-N 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 2
- 235000019395 ammonium persulphate Nutrition 0.000 claims description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 150000002460 imidazoles Chemical class 0.000 claims description 2
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 claims description 2
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 claims description 2
- 150000002475 indoles Chemical class 0.000 claims description 2
- 229920001451 polypropylene glycol Polymers 0.000 claims description 2
- 235000011056 potassium acetate Nutrition 0.000 claims description 2
- CHKVPAROMQMJNQ-UHFFFAOYSA-M potassium bisulfate Chemical compound [K+].OS([O-])(=O)=O CHKVPAROMQMJNQ-UHFFFAOYSA-M 0.000 claims description 2
- 235000007715 potassium iodide Nutrition 0.000 claims description 2
- 229960004839 potassium iodide Drugs 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 2
- 235000019394 potassium persulphate Nutrition 0.000 claims description 2
- 150000003217 pyrazoles Chemical class 0.000 claims description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 2
- 150000003233 pyrroles Chemical class 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- 229940001516 sodium nitrate Drugs 0.000 claims description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 2
- JXAZAUKOWVKTLO-UHFFFAOYSA-L sodium pyrosulfate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)OS([O-])(=O)=O JXAZAUKOWVKTLO-UHFFFAOYSA-L 0.000 claims description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 2
- 235000011152 sodium sulphate Nutrition 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 130
- 239000010949 copper Substances 0.000 abstract description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 31
- 229910052802 copper Inorganic materials 0.000 abstract description 31
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 17
- 239000011733 molybdenum Substances 0.000 abstract description 17
- 229910001182 Mo alloy Inorganic materials 0.000 abstract description 16
- 238000003475 lamination Methods 0.000 abstract description 11
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 150000002366 halogen compounds Chemical class 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 14
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 12
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 12
- 229910001069 Ti alloy Inorganic materials 0.000 description 11
- 230000003628 erosive effect Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 230000001934 delay Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 235000006408 oxalic acid Nutrition 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 description 3
- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000003517 fume Substances 0.000 description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 229940116269 uric acid Drugs 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- WJGAPUXHSQQWQF-UHFFFAOYSA-N acetic acid;hydrochloride Chemical compound Cl.CC(O)=O WJGAPUXHSQQWQF-UHFFFAOYSA-N 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 description 2
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 2
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000008045 alkali metal halides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
The present invention relates to etching solution compositions for transparent conductive film formed into fine pattern during manufacture of thin film transistors for flat panel liquid crystal displays. The compositions of the present invention comprise: 0.05 to 15 wt % of a halogen compound, 0.1 to 20 wt % of a secondary oxidant, 0.05 to 15 wt % of an etching adjustment agent, 0.1 to 15 wt % of a residue inhibitor, 0.3 to 10 wt % of a corrosion inhibitor, and balance water bringing total weight of the composition to 100 wt %. The compositions according to the present invention do not degrade copper film, copper alloy film, molybdenum film, molybdenum alloy film or laminations thereof.
Description
Technical field
The present invention relates to a kind of nesa coating etching reagent, described conducting film is fine pattern and is used to make transparency electrode in the production process of flat-panel monitor (FPD, Flat Panel Display).
Background technology
Nesa coating is the film that is widely used in Thin Film Transistor-LCD, plasma panel display, the electroluminescent display etc.In order in above-mentioned panel display apparatus, to form nesa coating, need etching work procedure to form needed fine pattern.
The ELD that use this moment comprises indium tin oxides film, indium zinc oxide film and Zinc oxide film; above-mentioned indium tin oxides film, indium zinc oxide film and Zinc oxide film are used for forming indium tin oxides film, indium zinc oxide film and Zinc oxide film on the top of protective membrane; make after the mask coating etching oxidation indium tin film, indium zinc oxide film and Zinc oxide film then with photoresist material.
The nesa coating etching reagent that uses has at present: the mixed aqueous solution of the mixed aqueous solution of acid of hydrochloric acid and nitric acid (chloroazotic acid), hydrochloric acid acetic acid, ferric chloride in aqueous solution, the uric acid aqueous solution, phosphate aqueous solution, oxalic acid (oxalic acid) aqueous solution etc.But existing nesa coating etching reagent finds to have following problem.
At first, acid of hydrochloric acid and nitric acid mixed aqueous solution (chloroazotic acid) although and hydrochloric acid acetic acid mixed aqueous solution etching speed is fast and stable, but because the volatilization of hydrochloric acid or nitric acid, the one-tenth component variation of etching agent composite is very big, therefore, (fume) phenomenon of being fuming is serious, pollutes operating environment, and the copper and the copper alloy that are used as electrode materials in the thin film transistor production process to Thin Film Transistor-LCD cause erosion.
The second, though the ferric chloride in aqueous solution etching speed is fast and safety, comparatively speaking the side etching amount is big and cause the pollution of iron.
The 3rd, the side etching amount of the uric acid aqueous solution is little and etching performance is better, but solution through the time alter a great deal.
The 4th, phosphate aqueous solution corrodes copper film, tin-copper alloy film, and the molybdenum film, the multilayer film of molybdenum alloy film or its lamination, and the etching of the indium tin oxides film in the nesa coating caused obstruction.
The 5th, oxalic acid (oxalic acid) aqueous solution etching performance stable and can not take place through the time change, be reasonable etching reagent therefore, but when etching, be easy to generate residue, and etching solution is after use, and the inboard of etching machines produces residue (oxalic acid crystallisate).
Summary of the invention
The technical problem that solves
Present nesa coating etching reagent has following shortcoming: when using nesa coating etching reagent such as acid of hydrochloric acid and nitric acid mixed aqueous solution (chloroazotic acid), hydrochloric acid aqueous acetic acid, ferric chloride in aqueous solution, the uric acid aqueous solution, phosphate aqueous solution, the oxalic acid aqueous solution, have the side etching phenomenon, through the time produce the residue phenomenon when variation phenomenon, etching and corrode copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or by the long-pending multilayer film phenomenon of above-mentioned rete etc.For addressing the above problem, the invention provides a kind of nesa coating etching reagent that can select.
Nesa coating etching reagent of the present invention for contain resist and through the time change inhibitor (
) the aqueous solution, can eliminate the shortcoming of existing nesa coating etching reagent fully.Especially the present invention has eliminated existing nesa coating etching reagent existing questions, promptly, the multilayer film phenomenon that produces the phenomenon of residue during etching and corrode copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or amassed by above-mentioned rete can be carried out the etching of selectivity pattern to nesa coating.
Technical scheme
For addressing the above problem, the invention provides a kind of optionally nesa coating etching reagent that has, described conducting film is a fine pattern and at flat-panel monitor (FPD, Flat Panel Display) be used to make transparency electrode in the production process, described nesa coating etching reagent contains: halide-containing, oxidation promoter, etching conditioning agent, residue conditioning agent, resist, through the time change inhibitor and water.
Especially, the invention provides a kind of etching reagent that can carry out the selective etch pattern, can eliminate erosion as the multilayer film of copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or the lamination of thin film transistor electrode materials to nesa coating.
In addition, the thickness of above-mentioned each metallic membrane is had no particular limits, can suitably regulate as required.More specifically, the thickness of above-mentioned copper film roughly lamination be
Above-mentioned molybdenum alloy film is meant and contains the molybdenum film that tungsten, titanium, niobium, chromium, tantalum etc. can together form the metal ingredient of alloy with molybdenum.For example, the molybdenum alloy film can be: molybdenum-tungsten (Mo-W), molybdenum-titanium (Mo-Ti), molybdenum-niobium (Mo-Nb), molybdenum-chromium (Mo-Cr), molybdenum-tantalum (Mo-Ta) etc.The lamination thickness of above-mentioned molybdenum film or molybdenum alloy film can be
Nesa coating etching reagent of the present invention is by the resist of the residue inhibitor of the etching conditioning agent of the oxidation promoter of the halide-containing of 0.05～15 weight %, 0.1～20 weight %, 0.05～15 weight %, 0.1～15 weight %, 0.3～10 weight % and to make etching reagent be that the water of 100 weight % is formed, in more detail, the present invention relates to not corrode copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or the nesa coating etching reagent of the multilayer film of lamination thus.
The halide-containing that is contained in the etching reagent of the present invention is the main oxygenant of etching nesa coating.There is no particular limitation to above-mentioned halide-containing, as long as can be dissolved as halogen ion or polyatom halogen ionic compound in solution, can have following chemical formula (1) structure particularly.
Chemical formula (1)
AX
m
(as above the A in the chemical formula is hydrogen ion (H
+), ammonium ion (NH
4 +), iron ion (Fe
2+, Fe
3+), aluminum ion (Al
3+) or Oxidation Number be the alkalimetal ion of 1～3 valency; X is a halogen; M is the oxidation number of A.)
Particularly, above-mentioned halide-containing can comprise hydrogen halide, ammonium halide, iron halide or alkali metal halide etc.More specifically, can be from by the hydrogenchloride that exemplifies (HCl), aluminum chloride (AlCl
3), Neutral ammonium fluoride (NH
4F), potassiumiodide (KI), Repone K (KCl) and ammonium chloride (NH
4Cl) select more than one in the group of Zu Chenging.
The content of the halide-containing of above-mentioned etching reagent can be 0.05～15% of the whole gross weight of etching reagent.If the too high levels of above-mentioned halide-containing then may corrode the phenomenon of the long-pending multilayer film of copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or these retes; If content is low, the shortcoming of the etching speed that delays nesa coating is arranged then.
The oxidation promoter that comprises in the etching reagent of the present invention has the effect of assisted etch nesa coating.The content of above-mentioned oxidation promoter can be 0.1～20% of the whole gross weight of etching reagent.If etching, tin-copper alloy film, molybdenum film, molybdenum alloy film will take place in too high levels or by the phenomenon of the long-pending multilayer film of these retes, the low shortcoming that the etching speed that delays nesa coating is then arranged of content.Above-mentioned oxidation promoter can use more than one the compound of selecting in the group by following compound formation: ammonium nitrate (NH
4NO
3), saltpetre (KNO
3), nitric acid (HNO
3), cupric nitrate (Cu (NO
3)) and SODIUMNITRATE (NaNO
3).Can in solution, dissolve nitrate ion (NO
3 -) compound all can be used as oxidation promoter.
The etching conditioning agent that is comprised in the etching reagent of the present invention can use sulfuric acid and sulphate cpd.Specifically can be from by selecting more than one as above-mentioned etching conditioning agent formed group of the following compound: sulfuric acid (H
2SO
4), ammonium sulfate ((NH
4)
2SO
4), sodium sulfate (Na
2SO
4), vitriolate of tartar (K
2SO
4), monoammonium sulfate (NH
4SO
4H), sodium pyrosulfate (NaSO
4H), sal enixum (KSO
4H), ammonium persulphate ((NH
4)
2S
2O
8), Sodium Persulfate (Na
2S
2O
8) and Potassium Persulphate (K
2S
2O
8).As long as can dissolve sulfate ion (SO in the solution
4 2-) promptly can be used as the etching conditioning agent.
The content of the etching conditioning agent that is added in the etching reagent of the present invention can be whole etching reagent gross weight 0.05～15%, too high levels then causes etching speed too fast, but also can corrode the phenomenon of the long-pending multilayer film of copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or these retes.If it is low then the shortcoming of the etching speed that delays nesa coating is arranged not contain etching conditioning agent or content.
The residue inhibitor that is comprised in the etching reagent of the present invention can improve the wettability of etching reagent, helps nesa coating to form slick etching, and suppresses the generation of residue.The content of the residue inhibitor that adds is 0.1～15% of etching reagent gross weight, uses the residue inhibitor in this scope to suppress residue, neither produces residue after using etching reagent, do not take place yet through the time change.Can both be used as the residue inhibitor as long as comprise all water-soluble cpdss of acetoxy group, can have the structure of following Chemical formula 2 particularly.
Chemical formula 2
B(CH
3COO)
n
(B in the above-mentioned chemical formula represents hydrogen ion (H
+), ammonium ion (NH4
+), iron ion (Fe
2+, Fe
3+), aluminum ion (Al
3+) or Oxidation Number be the alkalimetal ion of 1～3 valency; N is the Oxidation Number of B, is specially the integer in 1～3.)
Above-mentioned residue inhibitor can be from by selecting following group more than one compounds that form to use: acetic acid (acetic acid), Potassium ethanoate (potassium acetate), ammonium acetate (ammonium acetate), sodium-acetate (sodium acetate), magnesium acetate (magnesium acetate), manganese acetate (manganese acetate) and zinc acetate (zinc acetate).
The resist that is comprised in the etching reagent among the present invention has and suppress to corrode copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or by the effect of the long-pending multilayer film of these retes.The content of above-mentioned resist can be 0.3～10% of etching reagent gross weight.If too high levels, the speed that can slow down the etching nesa coating, content is low then may to corrode copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or by the phenomenon of the long-pending multilayer film of these retes.
Although above-mentioned resist is not had very big restriction, but can from the group of forming by following compound, select more than one as resist: azimidobenzene (Benzotriazole), amino tetrazole (aminotetrazole), 5-amino-1-phenyltetrazole (5-amino-1-phenyltetrazole), 5-amino-1-(1-naphthyl) tetrazolium (5-amino-1-(1-naphthyl) tetrazole), 1-methyl-5-amino tetrazole (1-methyl-5-aminotetrazole), 1,5-diamino tetrazolium (1,5-diaminotetrazole), imidazoles (imidazole), indoles (indole), purine (purine), pyrazoles (pyrazole), pyridine (pyridine), pyrimidine (pyrimidine), pyrroles (pyrrole), tetramethyleneimine (pyrrolidine), pyrroline (pyrroline), secondary amine (secondary amine) compound and amino acid (amino acid) compound.
Thereby comprised in the etching reagent of the present invention through the time change the steam output that inhibitor can reduce etching reagent and reduce the variation of etching reagent component content, and reduce because (fume) amount of being fuming that evaporation produces.Above-mentioned interpolation through the time change inhibitor content and can be 0～50% of etching reagent gross weight, if too high levels then can produce the phenomenon of the speed that delays the etching nesa coating.And through the time change inhibitor can be from needing at more than one by formed group of the following compound, but be not limited thereto: ethylene glycol, Tetraglycol 99, propylene glycol, butyleneglycol, polyoxyethylene glycol, polypropylene glycol and poly-Tetraglycol 99.
Nesa coating etching reagent of the present invention can be used for forming the transparency electrode that flat pannel display is used.The nesa coating that use this moment can comprise indium tin oxides film, indium zinc oxide film and Zinc oxide film etc.After being formed on described indium tin oxides film, indium zinc oxide film and Zinc oxide film on the protective membrane, be coated with photoresist material again, etching oxidation indium tin film, indium zinc oxide film and Zinc oxide film as mask.
Beneficial effect
Nesa coating etching reagent of the present invention be contain resist and through the time change the aqueous solution of inhibitor, can eliminate the side etching phenomenon that in existing nesa coating etching reagent, takes place, through the time when variation phenomenon, etching generation residue phenomenon and corrode copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or by the long-pending shortcomings such as multilayer film phenomenon of above-mentioned rete.Especially the present invention has eliminated existing nesa coating etching reagent existing questions, that is, produce the phenomenon of residue during etching and copper film or tin-copper alloy film are caused the erosive phenomenon, can carry out the etching of selectivity pattern to nesa coating.
Nesa coating etching reagent of the present invention in addition can provide suitable etching speed and pitch angle, and significantly reduces steam output, thereby reduces the variation of the one-tenth component of etching reagent.And, can also reduce (fume) amount of being fuming thus, thereby prevent the pollution of the environment.
Nesa coating etching reagent of the present invention is applicable to that the nesa coating to being formed by fine pattern carries out pattern etching, different with existing nesa coating etching reagent, almost disappear to main copper film, tin-copper alloy film, molybdenum film, molybdenum alloy film or by the erosion of the long-pending multilayer film of above-mentioned rete, thereby can reduce expense and improve the engineering profit as the transparent transistors electrode materials.
Description of drawings
Fig. 1 is after utilizing nesa coating etching reagent of the present invention to carry out Wet-type etching, with the striograph of electron microscope observation indium tin oxides film profile.
Fig. 2 is after utilizing nesa coating etching reagent of the present invention to carry out Wet-type etching, with the striograph of electron microscope observation indium tin oxides film residue.
Fig. 3 is after utilizing nesa coating etching reagent of the present invention to carry out Wet-type etching, with the striograph of electron microscope observation copper film/molybdenum-titanium alloy film profile.
Embodiment
Below, the present invention is described in more detail by embodiment.
But be necessary to illustrate that embodiments of the invention can have the various deformation formula, the scope of the invention can not be restricted because of embodiment following detailed description.
[embodiment 1]
The preparation of etching reagent
The etching reagent that preparation has following component: the NH of 5 weight %
4Cl, the HNO of 13 weight %
3, the K of 5 weight %
2SO
4, the ammonium acetate of 3 weight %, the amino tetrazole of 2 weight %, the ethylene glycol of 15 weight % is the water of 100 weight % with making the total weight percent of etching reagent.Employed etching-film sample is a lamination at glass substrate (indium tin oxides film, copper film/molybdenum-titanium alloy film, indium tin oxides film/copper film/molybdenum-titanium alloy film on the 100mm * 100mm) among the present invention.Lamination thickness is as shown in table 1.
Table 1
Etching oxidation indium tin film
Above-mentioned tin indium oxide membrane sample is carried out the video picture operation, prepare etched sample, utilize the etching reagent for preparing in the present embodiment to implement etching work procedure afterwards with spray pattern.When etching work procedure carried out, the temperature of keeping etching solution was 40 ℃.Each is formed total etching period of dividing and surpasses 70% of the etching concluding time respectively.Result after the etching such as table 2, illustrated in figures 1 and 2.
Etching/molybdenum-titanium alloy film
In order to estimate the etching degree to copper or copper alloy, the copper film/molybdenum as the laminated structure in the above-mentioned table 1-titanium alloy film that lamination is formed on glass substrate soaks (dipping) in 500mL etching reagent same as described above, and temperature maintenance is about 40 ℃.After 48 hours dippings, gather solution, utilize icp ms (Inductively coupled plasma mass spectroscopy, ICP-MS) concentration of the cupric ion of measurement stripping.With oxalic acid (5%) aqueous solution to the erosion degree minimum of copper or copper alloy is standard, has implemented method same as described above.Its result is as shown in table 2.
Shown in Fig. 1, Fig. 2 and table 2, the etching speed of the nesa coating etching reagent among the present invention is fast, and residue is few, and the pitch angle is about 40 °, has shown good etching outline.
Etching is as the indium tin oxides film/copper film/molybdenum-titanium alloy film of multilayer film sample
In indium tin oxides film/copper film as the multilayer film sample as shown in table 1/molybdenum-titanium alloy film, after forming pattern, the metal membrane-coating etching of copper film/molybdenum-titanium alloy film uses the etchant etching among the embodiment 1 again.Its result as shown in Figure 3, copper film/molybdenum-titanium alloy film is not etched.
[embodiment 2～12]
Embodiment is identical with embodiment 1, as shown in table 2, change halide-containing, oxidation promoter, etching conditioning agent, residue inhibitor, resist and through the time change the ratio of components of inhibitor, perhaps change halide-containing, oxidation promoter, etching conditioning agent, residue inhibitor, resist and through the time change the kind of inhibitor, and interpolation moisture, the total weight percent that makes whole etching reagent is 100 weight %.Implement the etching work procedure identical with embodiment 1.Its result is as shown in table 2.
Following table 2 has shown that etching reagent is to the etching speed of nesa coating (indium tin oxides film) and the result at pitch angle among the embodiment 2～12.And, in order to estimate erosion degree, the laminated structure that is formed by lamination on the glass substrate is carried out copper film/molybdenum-titanium alloy film in the table 1 that pattern etch obtains to copper or copper alloy, carry out etching with as above etching reagent, measure copper ion concentration.Its result is as shown in table 2.
Each is formed total etching period of dividing and surpasses 70% of the etching concluding time.As shown in table 2, the content of each composition is suitable for the compositing range of nesa coating etching reagent of the present invention, and its etching speed is fast, does not have etch residue, and the pitch angle is below 40 °, has shown good etching outline.The copper erosion assessment is the result show, compares with oxalic acid, has favorable applicability.
Table 2
[comparative example 1-5]
Embodiment is identical with embodiment 1～12, as shown in table 3, change outside the claimed range of the present invention halide-containing, oxidation promoter, etching conditioning agent, residue inhibitor, resist and through the time change the ratio of components of inhibitor, adding water, to make the total weight percent of whole etching reagent be 100%.Implement the etching work procedure identical then with embodiment 1-12.
Table 3 has shown the etching speed of the nesa coating (indium tin oxides film) among the comparative example 1-5 and the result at pitch angle.In order to estimate the erosion degree of copper or copper alloy, the laminated structure that is formed by lamination on glass substrate is carried out the copper film/molybdenum-titanium alloy film shown in the table 1 that pattern etch obtains, carry out etching with as above identical etching reagent, and measure copper ion concentration, as shown in table 2.By the result of following table 3 as can be known, etching speed is too fast under the situation of comparative example 1-3, and the selectivity of copper is reduced.Etching speed is slow excessively in comparative example 4, causes the pitch angle to become big.
Table 3
Claims (10)
1. nesa coating etching reagent, it is characterized in that, by the resist of the residue inhibitor of the etching conditioning agent of the oxidation promoter of the halide-containing of 0.05～15 weight %, 0.1～20 weight %, 0.05～15 weight %, 0.1～15 weight %, 0.3～10 weight % with to make the total weight percent of whole etching reagent be that 100% water is formed.
2. nesa coating etching reagent as claimed in claim 1 is characterized in that described halide-containing has the structure of Chemical formula 1,
Chemical formula 1: AX
m
Wherein, the A in the described chemical formula is hydrogen ion (H
+), ammonium ion (NH
4 +), iron ion (Fe
2+, Fe
3+), aluminum ion (Al
3+) or Oxidation Number be the alkalimetal ion of 1-3 valency; X is a halogen; M is the oxidation number of A.
3. nesa coating etching reagent as claimed in claim 2, described halide-containing are by hydrogenchloride (HCl), aluminum chloride (AlCl
3), Neutral ammonium fluoride (NH
4F), potassiumiodide (KI), Repone K (KCl) and ammonium chloride (NH
4Cl) compound of more than one formation of selection in the group of Zu Chenging.
4. nesa coating etching reagent as claimed in claim 1 is characterized in that described oxidation promoter is by ammonium nitrate (NH
4NO
3), saltpetre (KNO
3), nitric acid (HNO
3), cupric nitrate (Cu (NO
3)), SODIUMNITRATE (NaNO
3) select the compound of more than one formation in the group formed.
5. nesa coating etching reagent as claimed in claim 1 is characterized in that, described etching conditioning agent is by sulfuric acid (H
2SO
4), ammonium sulfate ((NH
4)
2SO
4), sodium sulfate (Na
2SO
4), vitriolate of tartar (K
2SO
4), monoammonium sulfate (NH
4SO
4H), sodium pyrosulfate (NaSO
4H), sal enixum (KSO
4H), ammonium persulphate ((NH
4)
2S
2O
8), Sodium Persulfate (Na
2S
2O
8) and Potassium Persulphate (K
2S
2O
8) select the compound of more than one formation in the group formed.
6. nesa coating etching reagent as claimed in claim 1 is characterized in that described residue inhibitor has the structure of following Chemical formula 2,
Chemical formula 2: B (CH
3COO)
n
Wherein, the B in the described chemical formula represents hydrogen ion (H
+), ammonium ion (NH4
+), iron ion (Fe
2+, Fe
3+), aluminum ion (Al
3+) or Oxidation Number be the alkalimetal ion of 1～3 valency; N is the Oxidation Number of B.
7. nesa coating etching reagent as claimed in claim 6, it is characterized in that, select more than one compounds that form in the group that described residue inhibitor is made up of acetic acid (acetic acid), Potassium ethanoate (potassium acetate), ammonium acetate (ammonium acetate), sodium-acetate (sodium acetate), magnesium acetate (manganese acetate), manganese acetate (manganese acetate) and zinc acetate (zinc acetate).
8. nesa coating etching reagent as claimed in claim 1, it is characterized in that, described resist is by azimidobenzene (Benzotriazole), amino tetrazole (aminotetrazole), 5-amino-1-phenyltetrazole (5-amino-1-phenyltetrazole), 5-amino-1-(1-naphthyl) tetrazolium (5-amino-1-(1-naphthyl) tetrazole), 1-methyl-5-amino tetrazole (1-methyl-5-aminotetrazole), 1,5-diamino tetrazolium (1,5-diaminotetrazole), imidazoles (imidazole), indoles (indole), purine (purine), pyrazoles (pyrazole), pyridine (pyridine), pyrimidine (pyrimidine), pyrroles (pyrrole), tetramethyleneimine (pyrrolidine), pyrroline (pyrroline), select more than one formation in the group that secondary amine (secondary amine) compound and amino acid (amino acid) compound are formed.
9. as each described nesa coating etching reagent of claim 1-8, it is characterized in that, described nesa coating etching reagent also comprise with etching reagent integral body be in a ratio of 0～50 weight % through the time change inhibitor.
10. nesa coating etching reagent as claimed in claim 9, it is characterized in that, described through the time change more than one compounds that form of selection in the group that inhibitor is made up of ethylene glycol, Tetraglycol 99, propylene glycol, butyleneglycol, polyoxyethylene glycol, polypropylene glycol and poly-Tetraglycol 99.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2008-0112176 | 2008-11-12 | ||
| KR1020080112176A KR101531688B1 (en) | 2008-11-12 | 2008-11-12 | Etchant for transparent conductive ITO films |
| PCT/KR2009/006657 WO2010056051A2 (en) | 2008-11-12 | 2009-11-12 | Etching solution for a transparent conductive film |
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| Publication Number | Publication Date |
|---|---|
| CN102177219A true CN102177219A (en) | 2011-09-07 |
| CN102177219B CN102177219B (en) | 2014-06-11 |
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|---|---|
| JP (1) | JP2012508965A (en) |
| KR (1) | KR101531688B1 (en) |
| CN (1) | CN102177219B (en) |
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| CN103627400A (en) * | 2012-08-22 | 2014-03-12 | 易安爱富科技有限公司 | Etchant composition for molybdenum alloy film and indium oxide film |
| CN103890234A (en) * | 2011-11-17 | 2014-06-25 | 易安爱富科技有限公司 | Molybdenum-alloy-film and indium-oxide-film etching-solution composition |
| CN103911159A (en) * | 2012-12-28 | 2014-07-09 | 三菱瓦斯化学株式会社 | Etchant and etching process for oxides containing at least indium and gallium |
| CN103980905A (en) * | 2014-05-07 | 2014-08-13 | 佛山市中山大学研究院 | Novel etching solution used in oxide material system, and etching method and application thereof |
| CN104513983A (en) * | 2013-10-07 | 2015-04-15 | 易安爱富科技有限公司 | Etching liquid composition for copper-and-molybdenum-containing film |
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| CN103627400B (en) * | 2012-08-22 | 2016-02-17 | 易安爱富科技有限公司 | Molybdenum alloy film and indium oxide film wet etchant component |
| CN103911159A (en) * | 2012-12-28 | 2014-07-09 | 三菱瓦斯化学株式会社 | Etchant and etching process for oxides containing at least indium and gallium |
| CN104513983B (en) * | 2013-10-07 | 2018-09-04 | 易安爱富科技有限公司 | Copper and molybdenum contain the etchant of film |
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| CN103980905A (en) * | 2014-05-07 | 2014-08-13 | 佛山市中山大学研究院 | Novel etching solution used in oxide material system, and etching method and application thereof |
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| CN107236956B (en) * | 2016-03-28 | 2020-04-17 | 东友精细化工有限公司 | Etchant composition for copper-based metal layer and method of manufacturing array substrate for display device using the same |
| CN110546741A (en) * | 2017-02-27 | 2019-12-06 | 富士技研工业株式会社 | Etching solution and use thereof |
| CN112064027A (en) * | 2020-09-14 | 2020-12-11 | 深圳市志凌伟业光电有限公司 | Etching solution for composite copper film structure |
| CN113322072A (en) * | 2021-06-25 | 2021-08-31 | 江阴润玛电子材料股份有限公司 | Compatible ITO etching solution and preparation method thereof |
| CN113322072B (en) * | 2021-06-25 | 2022-06-03 | 江阴润玛电子材料股份有限公司 | Compatible ITO etching solution and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010056051A3 (en) | 2010-08-19 |
| JP2012508965A (en) | 2012-04-12 |
| TW201035290A (en) | 2010-10-01 |
| WO2010056051A8 (en) | 2011-04-21 |
| KR101531688B1 (en) | 2015-06-26 |
| CN102177219B (en) | 2014-06-11 |
| TWI419957B (en) | 2013-12-21 |
| KR20100053175A (en) | 2010-05-20 |
| WO2010056051A2 (en) | 2010-05-20 |
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