CN112064027A - Etching solution for composite copper film structure - Google Patents
Etching solution for composite copper film structure Download PDFInfo
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- CN112064027A CN112064027A CN202010960641.7A CN202010960641A CN112064027A CN 112064027 A CN112064027 A CN 112064027A CN 202010960641 A CN202010960641 A CN 202010960641A CN 112064027 A CN112064027 A CN 112064027A
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- etchant
- solvent
- etching solution
- copper film
- acid
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
Abstract
The invention discloses an etching solution for a composite copper film structure, which comprises a solvent; the first etching agent is dissolved in the solvent, and the volume ratio of the first etching agent to the solvent is 1:1-1: 6; the first etchant is at least one of nitric acid and nitrous acid; the second etchant is dissolved in the solvent, and the volume ratio of the second etchant to the solvent is 1:1-1: 6; the second etchant is at least one of sulfuric acid, peroxysulfuric acid and nitrous acid; the third etching agent is dissolved in the solvent, and the volume ratio of the third etching agent to the solvent is 1:2-1: 21; the third etchant is at least one of hydrochloric acid, hypochlorous acid and perchloric acid; the volume ratio of the second etching agent to the third etching agent to the first etching agent is 1:1:1 to 1:0.25: 0.25. The etching solution can completely etch the region of the resistance layer which is not protected by the photoresistance, avoids the black edge at the edge of the metal circuit on the copper film, does not etch the copper film, and effectively improves the processing precision.
Description
Technical Field
The invention relates to the technical field of composite copper film structure processing with an embedded resistor/capacitor, in particular to an etching solution for a composite copper film structure.
Background
Engineers with electronic, electromechanical, or computer engineering backgrounds should purchase Printed Circuit Boards (PCBs) and develop, etch, and strip the PCBs based on a pre-designed circuit pattern (DES), and then form patterned copper film circuits, called metal lines, on the surfaces of the PCBs. After the metal circuit is fabricated, the predetermined electronic chip and passive components are disposed on the metal circuit, such as: amplifier, processor, resistor, capacitor, inductor, etc. to form an electronic circuit by using metal circuit, electronic chip and passive element.
On the other hand, with the development of smart technology, lightness and thinness have become the basic specifications of portable electronic products. It is expected that as the size of portable electronic products becomes thinner and lighter, the space for placing the electronic chip and the passive components inside the portable electronic products is also compressed. Therefore, it is a great problem for manufacturers and assembly factories of electronic devices to dispose sufficient electronic components and passive components in the limited internal space of the portable electronic products.
In view of this, the industry has sought to continually reduce the size of passive components. Currently, the size is 0805(80 × 50 mil)2) And 0603(60 × 30 mil)2) The passive component of (1) is mainly used for manufacturing a mainboard and a notebook computer, and the size of the passive component is 0402(40 multiplied by 20 mil)2) And 0201 (20X 10 mil)2) The passive component is mostly applied to smart phones and tablet computers. It is inferred that the continuous miniaturization of the size of the passive components is always subject to the bottleneck of technology or process, so the technology of "Embedded passive components" (Embedded Passives) has been paid attention again in recent years.
The composite copper film structure with the embedded resistor/capacitor comprises a base material layer, a resistor layer and a copper film layer which are sequentially laminated, wherein the resistor layer is made of nickel (Ni), chromium (Cr), tungsten (W), nickel-based compound (Ni-based compound), chromium-based compound (Cr-based compound), tungsten-based compound (W-based compound), nickel-based alloy (Ni-based alloy), chromium-based alloy (Cr-based alloy), tungsten-based alloy (W-based alloy) and the like, when the composite copper film structure with the embedded resistor/capacitor is processed, the same patterns are firstly etched on the copper film and the resistor layer, then an opening is etched on the pattern of the copper film, and the resistor layer pattern region corresponding to the opening is used as a resistor element in an electronic circuit.
In the actual process, when etching the composite copper film structure, ferric chloride (FeCl3) is usually used as the main etching solution for the resistive layer made of metal alloy or metal composite to remove the residual or redundant resistive layer under the conductive metal layer (i.e., copper film layer). Unfortunately, in the process of etching the resistive layer using ferric chloride, the conductive metal layer becomes thinner due to corrosion (etching), resulting in an increase in the line resistance of the metal line formed of the patterned conductive metal layer; in a severe case, the metal lines may be broken, that is, the conventional etching solution may affect the processing precision of the composite copper film structure. In addition, ferric chloride, as a main etching solution for the resistance layer made of metal alloy or metal composite, also forms an oblique angle at the edge of the patterned resistance layer, that is, the cross section of the formed metal line is trapezoidal rather than regular rectangular, so that when looking down on the metal line of the composite copper film structure, the edge of the metal line may have a black edge represented by the oblique angle, which seriously affects the processing precision.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: provided is an etching solution for a composite copper film structure, which can improve processing accuracy.
In order to solve the technical problems, the invention adopts the technical scheme that: the etching solution for the composite copper film structure comprises
A solvent;
the first etchant is dissolved in the solvent, and the volume ratio of the first etchant to the solvent is 1:1-1: 6; the first etchant is at least one of nitric acid and nitrous acid;
the second etchant is dissolved in the solvent, and the volume ratio of the second etchant to the solvent is 1:1-1: 6; the second etchant is at least one of sulfuric acid and peroxysulfuric acid;
a third etchant dissolved in the solvent, wherein the volume ratio of the third etchant to the solvent is 1:2-1: 21; the third etchant is at least one of hydrochloric acid, hypochlorous acid and perchloric acid;
wherein the volume ratio of the second etchant to the third etchant to the first etchant is 1:1:1 to 1:0.25: 0.25.
The invention has the beneficial effects that: the etching solution for the composite copper film structure can completely etch the resistance layer area which is not protected by the photoresistance, and prevent the edge of the metal circuit on the copper film from generating black edges (formed by the residual resistance layer), and the etching solution for the composite copper film structure can not etch the copper film layer in the composite copper film structure, thereby effectively improving the processing precision of the composite copper film structure; meanwhile, the etching solution for the composite copper film structure can not influence the surface appearance and the dielectric constant of the copper film and the substrate layer (such as a glass fiber plate).
Detailed Description
In order to explain the technical content, the objects and the effects of the present invention in detail, the following description will be given with reference to the embodiments.
The etching solution for the composite copper film structure comprises
A solvent;
the first etchant is dissolved in the solvent, and the volume ratio of the first etchant to the solvent is 1:1-1: 6; the first etchant is at least one of nitric acid and nitrous acid;
the second etchant is dissolved in the solvent, and the volume ratio of the second etchant to the solvent is 1:1-1: 6; the second etchant is at least one of sulfuric acid and peroxysulfuric acid;
a third etchant dissolved in the solvent, wherein the volume ratio of the third etchant to the solvent is 1:2-1: 21; the third etchant is at least one of hydrochloric acid, hypochlorous acid and perchloric acid;
wherein the volume ratio of the second etchant to the third etchant to the first etchant is 1:1:1 to 1:0.25: 0.25.
From the above description, the beneficial effects of the present invention are: the etching solution for the composite copper film structure can completely etch the resistance layer area which is not protected by the photoresistance, and prevent the edge of the metal circuit on the copper film from generating black edges (formed by the residual resistance layer), and the etching solution for the composite copper film structure can not etch the copper film layer in the composite copper film structure, thereby effectively improving the processing precision of the composite copper film structure; meanwhile, the etching solution for the composite copper film structure can not influence the surface appearance and the dielectric constant of the copper film and the substrate layer (such as a glass fiber plate).
Further, the etching solution also comprises a corrosion inhibitor dissolved in the solvent, and the concentration of the corrosion inhibitor in the etching solution is 0.01g/L-50 g/L; the corrosion inhibitor is at least one of a chloride corrosion inhibitor, a thiourea compound corrosion inhibitor and an organic corrosion inhibitor.
Further, the chloride-based corrosion inhibitor comprises at least one of potassium chloride, zinc chloride, calcium chloride, ammonium chloride and chromium chloride.
Further, the thiourea compound corrosion inhibitor comprises at least one of thiourea, thiourea dioxide, N-methylthiourea, 1, 3-dimethylthiourea, 1, 3-diethylthiourea and phenylthiourea.
Further, the organic corrosion inhibitor comprises at least one of benzotriazole, methylbenzotriazole, mercaptobenzothiazole, sodium benzotriazole, sodium mercaptobenzothiazole, methylbenzotriazole and methylisothiazolinone.
Further, the etching solution also comprises a wetting agent dissolved in the solvent, the concentration of the wetting agent in the etching solution is 0.02g/L-0.5g/L, and the wetting agent comprises at least one of nonylphenoxy polyoxyvinyl alcohol compounds, quaternary ammonium salt compounds and tert-octylphenoxy polyoxyvinyl alcohol compounds.
Further, the etching solution also comprises an acid agent dissolved in the solvent, wherein the concentration of the acid agent in the etching solution is 0.01g/L-150g/L, and the acid agent is methanesulfonic acid.
Further, the solvent is deionized water.
Example one
The first embodiment of the invention is as follows: an etching solution, suitable for an etching process of a composite copper film structure, the composite copper film structure including a conductive metal layer made of copper and a resistive layer connected to a surface of the conductive metal layer, and the resistive layer being made of nickel (Ni), chromium (Cr), tungsten (W), nickel-based compound (Ni-based compound), chromium-based compound (Cr-based compound), tungsten-based compound (W-based compound), nickel-based alloy (Ni-based alloy), chromium-based alloy (Cr-based alloy), or tungsten-based alloy (W-based alloy), the etching solution comprising:
a solvent, optionally, the solvent is deionized water;
a first etchant dissolved in the solvent, a volume ratio (v/v) of the first etchant to the solvent being 1:1 to 1: 6; the first etchant is at least one of nitric acid and nitrous acid;
a second etchant dissolved in the solvent, a volume ratio (v/v) of the second etchant to the solvent being 1:1 to 1: 6; the second etchant is at least one of sulfuric acid and peroxysulfuric acid;
a third etchant dissolved in the solvent, a volume ratio (v/v) of the third etchant to the solvent being 1:2 to 1: 21; the third etchant is at least one of hydrochloric acid, hypochlorous acid and perchloric acid;
wherein the ratio (v/v/v) of the volume of the second etchant, the volume of the third etchant and the volume of the first etchant is between 1:1:1 and 1:0.25: 0.25.
Incidentally, the unit of (v/v) is (ml/L), and the unit of (v/v/v) is (ml/ml/ml).
Optionally, the etching solution further comprises a corrosion inhibitor dissolved in the solvent, and the concentration of the corrosion inhibitor in the etching solution is 0.01g/L-50 g/L; the corrosion inhibitor is at least one of a chloride corrosion inhibitor, a thiourea compound corrosion inhibitor and an organic corrosion inhibitor. Wherein, the chloride corrosion inhibitor comprises at least one of potassium chloride, zinc chloride, calcium chloride, ammonium chloride and chromium chloride; the thiourea compound corrosion inhibitor comprises at least one of thiourea, thiourea dioxide, N-methylthiourea, 1, 3-dimethylthiourea, 1, 3-diethylthiourea and phenylthiourea; the organic corrosion inhibitor comprises at least one of benzotriazole (1,2,3-benzotriazole, BTA), methylbenzotriazole (5-Methyl-1H-benzotriazole, TTA), Mercaptobenzothiazole (2-Mercaptobenzothiazole, MBT), Sodium benzotriazole (Sodium salt of 1,2,3-benzotriazole, BTA. Na), Sodium Mercaptobenzothiazole (Sodium 2-Mercaptobenzothiazole, MBT. Na), methylbenzotriazole (Sodium salt of 5-Methyl-1H-benzotriazole, TTA. Na) and methylisothiazolinone (2-Methyl-4-thiazolin-3-CMIT).
It should be noted that engineers familiar with the processes of PCB development, Etching, and Stripping (DES) should know that when a corrosion inhibitor is added to the Etching solution, one corrosion inhibitor may be used alone or two or more corrosion inhibitors may be used in combination.
In practical application of the present invention, a wetting agent may be further added to dissolve in the solvent, wherein the concentration of the wetting agent in the etching solution is 0.02g/L-0.5g/L, and the wetting agent includes at least one of nonylphenoxy polyoxyethylene alcohol compounds, quaternary ammonium salt compounds and tert-octylphenoxy polyoxyethylene alcohol compounds.
And an acid agent can be further added and dissolved in the solvent, wherein the concentration of the acid agent in the etching solution is 0.01g/L-150g/L, and the acid agent can be selected from methanesulfonic acid.
Experiment of
Preparation of experimental raw materials: a resistance layer was formed on the roughened surface of a copper film having a length of 6mm and a width of 4mm, thereby obtaining a composite copper film structure. Wherein the copper film has a thickness of 18 μm, and the resistance layer is a nickel-chromium compound layer having a thickness of 200 nm. Next, the resistive layer of the composite copper film structure was thermally press-bonded to a glass fiber board (FR4) using a semi-cured Epoxy resin (B stage Epoxy, p.p.), thereby obtaining a circuit board having a composite copper film structure.
During etching, the temperature of an etching tank containing etching solution is controlled at 70 ℃, and the circuit board with the composite copper film structure is immersed in the etching solution for 10 minutes. The etched areas were analyzed by an energy analyzer (EDS) and recorded until the resistive layer could no longer be detected from the circuit board having the composite copper film structure.
The applicant prepared two etching solutions of the present invention and two conventional etching solutions as control groups, and the experimental results are shown in table 1,
table 1 table of etching experiment results
For sample 1, the first etchant was nitric acid, which was dissolved in deionized water at a volume ratio of 1:5 (ml/L). And the second etchant is sulfuric acid, which is dissolved in deionized water in a volume ratio of 1:5 (ml/L). Furthermore, the third etchant is hydrochloric acid, which is dissolved in deionized water according to the volume ratio of 1:5 (ml/L). It should be self-estimating that there is a mixing ratio (v/v/w) between the second etchant, the third etchant and the first etchant, and the mixing ratio is 1:1:1 (ml/ml/g). Sample 1, on the other hand, contained no corrosion inhibitor. Further, for other experimental samples, engineers familiar with the formulation of the etching solution can naturally calculate the (dissolution) ratio of each etching agent in the deionized water, the mixing ratio (v/v/v) between the second etching agent, the third etching agent and the first etching agent, and the concentration of the corrosion inhibitor in the deionized water according to the contents of table 1.
As can be seen from the contents described in table 1, after the composite copper film structure is etched by using the etching solution of the present invention, it is found that the resistive layer is completely etched away, and the etching solution does not etch the copper film (conductive metal layer).
In addition, when microscopic observation is further performed on the sample 1-2 and the control group 1-2 after the etching process by using a polarized light optical microscope, the copper film edge in the composite copper film structure of the control group 1-2 has a resistance layer residue and presents a black edge, while the copper film edge in the composite copper film structure of the sample 1-2 has no resistance layer residue, i.e., no black edge (the black edge is an appearance of a bevel in the background art). In other words, the etching solution of the present invention can not etch the conductive metal layer (i.e. the copper film) and/or effectively control the etching rate of the copper film during the process of etching the resistive layer of the composite copper film structure. In addition, the experimental results also show that for the area not protected by the resistor, no edge of the resistor layer is left (which is obviously different from the etching solution containing ferric chloride in the prior art). Meanwhile, the etching solution does not affect the surface appearance and the dielectric constant of the copper film layer and the dielectric layer/substrate layer (i.e. the glass fiber board).
In conclusion, the etching solution for the composite copper film structure provided by the invention can completely etch the area of the resistance layer which is not protected by the photoresist, and prevent the edge of the metal circuit on the copper film from generating black edges (formed by the residual resistance layer), and the etching solution for the composite copper film structure can not etch the copper film layer in the composite copper film structure, thereby effectively improving the processing precision of the composite copper film structure; meanwhile, the etching solution for the composite copper film structure can not influence the surface appearance and the dielectric constant of the copper film and the substrate layer (such as a glass fiber plate).
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent modifications made by the present invention in the specification or directly or indirectly applied to the related technical field are included in the scope of the present invention.
Claims (8)
1. The etching solution for the composite copper film structure is characterized in that: comprises that
A solvent;
the first etchant is dissolved in the solvent, and the volume ratio of the first etchant to the solvent is 1:1-1: 6; the first etchant is at least one of nitric acid and nitrous acid;
the second etchant is dissolved in the solvent, and the volume ratio of the second etchant to the solvent is 1:1-1: 6; the second etchant is at least one of sulfuric acid and peroxysulfuric acid;
a third etchant dissolved in the solvent, wherein the volume ratio of the third etchant to the solvent is 1:2-1: 21; the third etchant is at least one of hydrochloric acid, hypochlorous acid and perchloric acid;
wherein the volume ratio of the second etchant to the third etchant to the first etchant is 1:1:1 to 1:0.25: 0.25.
2. The etching solution for a composite copper film structure according to claim 1, characterized in that: the corrosion inhibitor is dissolved in the solvent, and the concentration of the corrosion inhibitor in the etching solution is 0.01g/L-50 g/L; the corrosion inhibitor is at least one of a chloride corrosion inhibitor, a thiourea compound corrosion inhibitor and an organic corrosion inhibitor.
3. The etching solution for a composite copper film structure according to claim 2, characterized in that: the chloride corrosion inhibitor comprises at least one of potassium chloride, zinc chloride, calcium chloride, ammonium chloride and chromium chloride.
4. The etching solution for a composite copper film structure according to claim 2, characterized in that: the thiourea compound corrosion inhibitor comprises at least one of thiourea, thiourea dioxide, N-methylthiourea, 1, 3-dimethylthiourea, 1, 3-diethylthiourea and phenylthiourea.
5. The etching solution for a composite copper film structure according to claim 2, characterized in that: the organic corrosion inhibitor comprises at least one of benzotriazole, methyl benzotriazole, mercaptobenzothiazole, benzotriazole sodium, mercaptobenzothiazole sodium, methylbenzotriazole and methylisothiazolinone.
6. The etching solution for a composite copper film structure according to claim 1, characterized in that: the etching solution also comprises a wetting agent dissolved in the solvent, the concentration of the wetting agent in the etching solution is 0.02g/L-0.5g/L, and the wetting agent comprises at least one of nonylphenoxypolyoxyethylene alcohol compounds, quaternary ammonium salt compounds and tert-octylphenoxypolyoxyethylene alcohol compounds.
7. The etching solution for a composite copper film structure according to claim 1, characterized in that: the etching solution also comprises an acid agent dissolved in the solvent, the concentration of the acid agent in the etching solution is 0.01g/L-150g/L, and the acid agent is methanesulfonic acid.
8. The etching solution for a composite copper film structure according to claim 1, characterized in that: the solvent is deionized water.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114000150A (en) * | 2021-10-29 | 2022-02-01 | 苏州博洋化学股份有限公司 | Copper etching solution for Array process thick film process in FP industry |
| CN114318339A (en) * | 2021-12-21 | 2022-04-12 | 苏州博洋化学股份有限公司 | Etching solution for copper alloy film in high-stability PFD (pulse frequency device) industry |
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| CN114000150A (en) * | 2021-10-29 | 2022-02-01 | 苏州博洋化学股份有限公司 | Copper etching solution for Array process thick film process in FP industry |
| CN114318339A (en) * | 2021-12-21 | 2022-04-12 | 苏州博洋化学股份有限公司 | Etching solution for copper alloy film in high-stability PFD (pulse frequency device) industry |
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