TW508374B - Etching solution for nickel or nickel alloy, and etching method - Google Patents

Etching solution for nickel or nickel alloy, and etching method Download PDF

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Publication number
TW508374B
TW508374B TW89117064A TW89117064A TW508374B TW 508374 B TW508374 B TW 508374B TW 89117064 A TW89117064 A TW 89117064A TW 89117064 A TW89117064 A TW 89117064A TW 508374 B TW508374 B TW 508374B
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Taiwan
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nickel
weight
etching
copper
alloy
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TW89117064A
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Chinese (zh)
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Tsuyoshi Yoneoka
Daisaku Akiyama
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Mec Kk
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/44Compositions for etching metallic material from a metallic material substrate of different composition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067Etchants

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)

Abstract

The subject of the present invention is to produce an etching solution for nickel or a nickel alloy in which the etching rate of the nickel or a nickel alloy is high, also, the erosion of the other metals such as copper and a copper alloy in particular is extremely small, and moreover, side etching is hardly occurred. In an etching solution in which, from the material in which nickel or a nickel alloy and the other metals are coexistent, the nickel or nickel alloy is selectively etched, this etching solution for nickel or a nickel alloy is composed of an aqueous solution containing (A) nitric acid of 5 to 5 weight %, (B) sulfuric acid of 0.5 to 40 weight %, (C) the main oxidizer selected from peroxide, nitrate and an aromatic nitro compound of 0.1 to 20 weight % and (D) chlorine ions of 0.0001 to 0.5 weight %.

Description

,374 友、發明說明α) [發明之詳細說明] [發明所屬之技術領域] 本發明為關於由鎳或鎳合金與其他金屬共^ 、— 所構成之可選擇性地蝕刻鎳或鎳合金之触刻、=之複合材料 法。本發明之蝕刻液特別可用於半制:/(,及麵刻 等電子零件之製造。 、脱衣叩、印刷電路板 [先前之技術] 於包含TAB用可撓式基板和BGA包 之電極和配線、半導體製品之電極^ =印刷電路板 電鍍和無電解鍍敷形成鎳被膜之工铲^ ^ ,具有經由 部分所形成的鎳被膜為經由蝕刻液二皮:::於不需要之 亟和配線許多為複數種類金屬的屉人雕:由於前述電 時,要求不侵蝕鎳以外之金屬。s 口脰,故在剝離鎳被膜 例如於依據半添加法之印刷 布壞氧樹脂含浸板、聚醯亞胺】的衣造中’乃於破璃 電解鑛錦和錄澱積後’以鍍阻之絕緣基板上進行無 :行電鍍鍍鋼,於鎳上形成銅電路》成】路的逆圖型’其次 ς J將露出之鎳剝離。此情形所使用;二將鍍阻物剝離, 不钕蝕銅電路。 7使用之鎳蝕刻液,被要求 【:钱鋼且剝離鎳之鞋刻液 作為添力 中已揭不於含有硝酸、、将開千6-5 745 7號公報 基之有機酴另a 士'…ι平 氣之酸性溶液中,以含有叛 物 又’於特開平9 揭示由不含齒離子之 ’夜所構成的蝕刻液 _228〇75號公報中 89117064.ptd $ 4頁 五、發明說明(2) 业#匕氧化氫等氧化劑、芳香族硝基化人物七 二^^=之水溶液所構成㈣刻液機染料和 市場上渴望$:::: η’亚未充分抑制銅之侵#,於 Ξ7銅之知蝕更被抑制的鎳蝕刻液。、374 friends, description of the invention α) [Detailed description of the invention] [Technical field to which the invention belongs] The present invention relates to a device capable of selectively etching nickel or a nickel alloy composed of nickel or a nickel alloy and other metals. Composite material method of engraving, =. The etching solution of the present invention can be particularly used for the manufacture of electronic parts such as semi-finished products such as / (, and face engraving.), Strippers, printed circuit boards [previous technology] for electrodes and wiring including flexible substrates for TAB and BGA packages 、 Electrode of semiconductor products ^ = Shovel for forming nickel coating on printed circuit board electroplating and electroless plating ^ ^ The nickel coating formed by the part is formed by the etching solution. ::: When it is not needed and many wiring Drawers of multiple types of metal: Because the above-mentioned electricity is required to not attack metals other than nickel. S mouth, so the nickel coating is peeled off, for example, printed cloth bad oxygen resin impregnated board based on semi-additive method, polyimide In the clothes manufacturing process, “is after the break of the electrolytic glass ore bromine and the deposition” on the insulating substrate with no plating: line plating steel to form a copper circuit on nickel "inverse pattern of the road" followed by ς J strips the exposed nickel. Used in this case; two strips the plated material and does not etch the copper circuit with neodymium. 7 The nickel etching solution used is required [: Qiangang Steel and nickel-stripping liquid for shoe engraving as a booster. Has been revealed not to contain nitric acid, will be opened thousands 6-5 745 No. 7 organic-based organic compounds in a flat acidic solution containing traitors and 'Yukkaihei 9' reveals an etchant composed of 'night without tooth ions'_228 〇75Publication 89117064.ptd $ 4Page 5. Description of the Invention (2) Industry #Diamond Oxide and other oxidants, aromatic Nitrogenated Character 720 ^^ = aqueous solution composed of engraving liquid machine dyes and market desires $ :::: η ′ 亚 未 undempressed copper invasion #, Yu et al. Nickel etchant, which suppresses copper corrosion more,

^本發明為克服先前技術之缺點,以接彳i£ # I 虫刻速度#、且其他以外之金屬=、錄或錄合 的。,之錄或鎳合金之餘刻液、以及飯刻法為其目“ 八 本电明為以提供幾乎不合發生5ι丨4占ir丨 金之钱刻液、以及㈣&。^曰《生心刻之鎳或鎳合 [用以解決課題之手段] 本發明者等人致力檢 上述先前技術之缺點。 α ,、左下述之構成而克服 金:發:2:=:合金之钱刻速度快、且其他以外之 液,其為由ί= ά之侵钱極少之鎳或鎳合金之姓刻 硫酸0.5〜‘、(c ^酸5/55%(重量% ’以下同樣)、⑻ 物所選出之主Λ= 酸鹽及芳香族硝基化合 臬或錄合金之錄夜…關二 之蝕刻液:有比。疋化合物0·01〜6%之水溶液之鎳或鎳合金 之材斜本發明為關於令鎳或鎳合金、與其他金屬混合存在 ,接觸前述水溶液,並且選擇性地蝕刻鎳或鎳合金 89117064.ptd 第5頁 508374 五、發明說明(3) 之蝕刻法。 [發明之實施型態] 以下,詳細說明 本發明之蝕刻液 之成分。又,輔助 酉夂之〉辰度為5〜55% 述/辰度未滿5 %則鎳 恕化並且恐發生無 於本發明中,為 併用。因為如此併 之鎳的餘刻速度變 Q · 1〜1 0 %、更佳為 钱刻速度之效果不 恐發生無法蝕刻。 本發明之蝕刻劑 了使用過氧化物、 種。 本發明 中,硝 氧化齊1J 、較佳 的蝕刻 法蝕刻 了令氧 用硝酸 &。硫 1 〜5% c 夠充分 中所用 確酸鹽 酉欠為令主氧化劑所氧化之鎳溶解 亦具有促進鎳之氧化之作用。硝 為10〜40%、更佳為2〇〜3〇%。前 速度變慢,若超過55%則令鎳鈍 〇 化之鎳溶解,亦可將硝酸與硫酸 和硫酸,故比未併用硫酸之情況 酸之濃度為0· 5〜40%、較佳為 剷述濃度未滿0 · 5 %,則提升錄 ’若超過4 0 %則令鎳鈍態化並且 之主乳化劑為令鎳氧化之成分, 及芳香族硝基化合物中之至少一 過氧 前述過氡化物可列與y, 銳、、^手#於斤】舉例如過氧化氫、過氧化鈉 過氧化苯醯等。^ In order to overcome the shortcomings of the prior art, the present invention is based on the following: # I 虫 刻 速 #, and other metals =, recording or recording. , The engraving solution of nickel or nickel alloy, and the rice carving method for its purpose "Eight books of the Ming Dynasty to provide 5 丨 丨 ir 丨 gold money engraving solution, and ㈣ &. Carved nickel or nickel alloy [means to solve the problem] The present inventors and others are committed to examining the shortcomings of the above-mentioned prior art. Α, the following structure to overcome gold: hair: 2: =: alloy money engraving speed is fast And other liquids, which are selected by the name of nicked nickel or nickel alloy with little invasion of sulfur, sulphuric acid 0.5 ~ ', (c ^ acid 5/55% (the same as the following for weight%), and the product selected The main Λ = acid salt and aromatic nitro compound 臬 or 合金 alloy recording night… the second etching solution: ratio. 疋 compound 0. 01 ~ 6% aqueous solution of nickel or nickel alloy material. The invention is Regarding the presence of nickel or nickel alloy mixed with other metals, contacting the aforementioned aqueous solution, and selectively etching nickel or nickel alloy 89117064.ptd page 5 508374 5. Etching method of invention description (3). ] Hereinafter, the components of the etching solution of the present invention will be described in detail. Moreover, the degree of the auxiliary solution is 5 ~ 55% If the temperature is less than 5%, nickel will be converted and it will not occur in the present invention. It is used in combination. Because of this, the remaining nickel speed becomes Q · 1 ~ 10%, and more preferably money engraving. The effect of speed is not feared and cannot be etched. The etchant of the present invention uses peroxides and species. In the present invention, nitric oxide 1J, the preferred etching method etches oxygen with nitric acid & sulfur 1 ~ 5% c The sufficient salt used in the process is enough to dissolve the nickel oxidized by the main oxidant and also promote the oxidation of nickel. The nitrate is 10 ~ 40%, more preferably 20 ~ 30%. The front speed becomes slower, If it exceeds 55%, it will dissolve nickel, and dissolve nickel. Nitric acid, sulfuric acid, and sulfuric acid can also be used. Therefore, the concentration of acid is 0.5 to 40%, preferably less than 0. · 5%, then increase the record 'if more than 40% will passivate nickel and the main emulsifier is the component that oxidizes nickel, and at least one peroxy compound in the aromatic nitro compound can be listed with y , 锐 ,, ^ 手 # 于 斤】 For example, hydrogen peroxide, sodium peroxide, phenylhydrazone, and the like.

如述石肖酸鹽可列舉例4 織二硝醆鎳等。一酸銨、确酸鈉、硝酸鉀、确 甲基:ΐ物可列舉例如硝基苯續酸、硝基 峭基本妝峭基笨酚、其鹽等。 4可列舉例如硝基笨磺酸納、琐基苯曱酸鈉等。For example, the stone salt can be exemplified in Example 4 woven dinitrate nickel. Monoammonium acid, sodium sulphate, potassium nitrate, sodium succinate: Examples of phosphonium compounds include nitrobenzoic acid, nitrobenzylbenzylphenol, and salts thereof. 4 includes, for example, sodium nitrobenzylsulfonate and sodium zirconate.

^yj〇^ /4 五、發明說明(4) 0 5主〜t化劑^農度為Ο.1〜2〇%、較佳為Ο·1〜5%、更佳為 速度變^,河述/度未滿〇.1%,則氧化力不足且錄之敍刻 ^ k 右超過20%則銅等之侵蝕變大。 前ί’d刻液中所用之氯離子為抑制銅等溶解之成分。 之趟舻脑?如以鹽酸、鹽酸苯胺、鹽酸胍、鹽酸乙胺等 氣it ]氣化錢、氯化納、氯化鋅、氯化銅、氯化鎳等 乳化物等型式為佳。 干予 η /』f氯離子之濃度為0 · 0 0 01〜0 · 5 %、較佳為0 · 0 0 01〜 ,.二更佳為0· 0 0 0 1〜0·0 0 5%。前述濃度未滿0.0 0 0 1 % 丄」銅專之侵蝕變大,若超過〇· 5%則令鎳的蝕刻速度變 十笑〇 又,將本發明之蝕刻劑使用於圖型蝕刻時,為了放止副 I虫刻’較佳添加吡啶化合物。 ,例士於依據半添加法之印刷電路板的製造中,進行以無 電2鍍鎳等作為頭道鍍物,於電鍍銅形成電路後將鎳蝕刻 之=況中,若使用添加吡啶化合物之本發明之蝕刻液,則 可幾乎不發生副蝕刻(於銅下方部分之鎳的溶解)。 月,J述所謂之Π比啶化合物為指咄啶及其氫原子為經鹵原 子、胺基、羥基、烷基、芳烷基、乙烯基、爷醯基等之取 ,基所取代之化合物,其具體例可列舉2_氯吡啶、3—溴咄 啶、3-氟咣啶、2, 6-二氯吡啶、2-胺基咄啶、2, 3-二胺基 =啶、3-羥基吡啶、2, 4-二曱基,比啶、2, 4, 6—三曱基咄 =、2-羥甲基π比啶、2-(2-羥基二乙基)咄啶、2_乙烯基咄 啶、2 -乙烯基吡啶、4 - ( 3 -苯丙基)咄啶、4 —苄醯基u比啶^ yj〇 ^ / 4 V. Description of the invention (4) 0 5 The main ~ t chemical agent ^ The agricultural degree is 0.1 ~ 20%, preferably 0 · 1 ~ 5%, more preferably the speed change ^, river If the ratio is less than 0.1%, the oxidizing power is insufficient and the recorded time is more than 20%, and the corrosion of copper and the like becomes larger. The chloride ion used in the former'd engraving solution is a component that suppresses dissolution of copper and the like. A trip to the brain? For example, hydrochloric acid, aniline hydrochloride, guanidine hydrochloride, ethylamine hydrochloride, etc. are preferred. Emulsions such as sodium chloride, sodium chloride, zinc chloride, copper chloride, and nickel chloride are preferred. The concentration of the dry ion η / "f chloride ion is 0 · 0 0 01 ~ 0 · 5%, preferably 0 · 0 0 01 ~. 2 is more preferably 0 · 0 0 0 1 ~ 0 · 0 0 5% . The above-mentioned concentration is less than 0.0 0 0 1%. The corrosion of copper is increased, and if it exceeds 0.5%, the etching rate of nickel will be greatly changed. Furthermore, when the etchant of the present invention is used in pattern etching, It is preferable to add a pyridine compound to the release of parasites. For example, in the manufacture of printed circuit boards based on the semi-additive method, electroless nickel plating or the like is used as the head plating, and nickel is etched after electroplating copper to form a circuit. In the case, if a pyridine compound is used, The etching solution of the invention can hardly cause sub-etching (dissolution of nickel in the lower part of copper). The "bipyridine compound" mentioned in J refers to a compound in which pyridine and its hydrogen atom are substituted by a halogen atom, an amine group, a hydroxyl group, an alkyl group, an aralkyl group, a vinyl group, and a hexyl group. Specific examples include 2-chloropyridine, 3-bromopyridine, 3-fluoropyridine, 2, 6-dichloropyridine, 2-aminopyridine, 2, 3-diaminopyridine, 3- Hydroxypyridine, 2,4-difluorenyl, bipyridine, 2, 4, 6-trimethylpyridyl =, 2-hydroxymethyl pipyridine, 2- (2-hydroxydiethyl) pyridine, 2_ Vinylpyridine, 2-vinylpyridine, 4- (3-phenylpropyl) pyridine, 4-benzylpyridyl u-pyridine

前述吼咬化合物之濃度為0.01 6°/〇 、車交4土 ' 更佳為G.1〜U。前述濃度為·未滿"1%、為G]〜3%、 效果少H面即使超糊則亦未察見^制副姓刻之 而令效果增大。 ° ’恭加量增加 於本發明之鎳蝕刻液中,視需要亦可添加 之成分。例如,為了促進鎳之溶解,亦可 ^成分以外 離子等之ii離子,且為τ裎一 、、加溴離子、碘 且馮了棱鬲對於被處理材 亦可添加非離子系界面活性劑和水溶性溶劑之濕潤性, 本發明之蝕刻液可藉由令前述成 換水共同混合、攪拌則可輕易調製。 乂佳為離子交 本發明蝕刻液之使用方法並無^ 中浸潰被處理材料之方法、將斜 、’可列舉蝕刻液 蝕刻液與被處理材料之接觸時間::之方法等。又’ 材料之種類’被蝕刻錦之厚度等而適:二摆可根據被處理 [實施例] 過曰k擇。 t施例1〜7及比軔 將表1及表2所示之成分混人,— 蝕刻这声为钿俨铋$命4 ° 调製银刻液。所得液之鎳 2 為如下述調查,並以目視觀察銅表 甶有無k色。結果不於表i及表2。 (鎳姓刻速度之測定) 40·χ 〇·3_ 之鎳板(比重8.845)w5^_ ::中::置3分鐘*取* ’並依據下式,由錄板之重量變 化,鼻出蝕刻速度。The concentration of the above-mentioned roaring bite compound is 0.01 6 ° / 〇, and Chejiao 4 soil 'is more preferably G.1 ~ U. The aforementioned concentration is less than 1%, G] ~ 3%, and the effect is small. Even if the surface is too thick, the effect is not seen even if it is engraved by the surname. ° 'The amount added is added to the nickel etching solution of the present invention, and can be added as needed. For example, in order to promote the dissolution of nickel, ii ions such as ions other than ions can be added, and τ 裎, 加, bromide, iodine, and phosphine can be added to the material to be treated. Non-ionic surfactants and For the wettability of water-soluble solvents, the etching solution of the present invention can be easily prepared by mixing and stirring the above-mentioned exchanged water. The method of using the etching solution of the present invention does not include a method of impregnating the material to be treated, and the method of etching, etc. can be exemplified as the contact time between the etching solution and the material to be treated :: method, etc. The “type of material” is suitable for the thickness of the etched brocade, etc .: The second pendulum can be selected according to the processing example. tExamples 1 to 7 and the ratio 轫 Mix the ingredients shown in Table 1 and Table 2—the etching sound is bismuth, and the temperature is 4 ° to modulate the silver engraving solution. The obtained liquid Ni 2 was investigated as described below, and the copper surface was visually observed for the presence or absence of k color. Results are shown in Tables i and 2. (Determination of the Nickel Surveillance Speed) 40 · χ 〇 · 3_ Nickel Plate (Specific Gravity 8.845) w5 ^ _ :: Medium :: Set for 3 minutes * Take * 'and according to the following formula, change the weight of the recording plate, nose out Etching speed.

\\312\2D-CODE\89-ll\89117064.ptd\\ 312 \ 2D-CODE \ 89-ll \ 89117064.ptd

508374 五、發明說明(6) 10000(處理前之鎳板重量(克)-處理 後之鎳板重量(克)) 剝離速度("m/分鐘)=-— " ~一 8. 845 X 3 (分鐘)X 32· 48(cm2) (銅侵餘速度之測定) 將40mm X 40mm X 0· 3mm之銅板(比重8. 92)於25 °C之I虫刻 液中靜置3分鐘後取出,並依據下式,由銅板之重量變 化、算出侵#速度。 10000(處理前之銅板重量(克)-處理 後之銅板重量(克)) 侵姓速度("m /分鐘)=- 8. 92 X 3(分鐘)X 32. 48 (cm2)508374 V. Description of the invention (6) 10000 (weight of nickel plate before processing (g)-weight of nickel plate after processing (g)) Peeling speed (" m / min) = -— " ~ 一 8. 845 X 3 (minutes) X 32 · 48 (cm2) (Measurement of copper invasion speed) 40mm X 40mm X 0.3mm copper plate (specific gravity 8.92) was left to stand for 3 minutes in 25 ° C I insect solution Take out and calculate the invasion speed from the weight change of the copper plate according to the following formula. 10000 (weight of copper plate before processing (g)-weight of copper plate after processing (g)) Invasion speed (" m / minute) =-8. 92 X 3 (minutes) X 32. 48 (cm2)

\\312\2D-CODE\89-ll\89117064.ptd 第9頁 508374 五、發明說明(7) 實施例 編號 組成(重量%) 鎳剝離速度 (β m/min) 銅侵蝕速度 (β m/min) 銅表面之變化 1 硝酸(67.5%) 50.0 硫酸(62.5%) 10.0 過氧化氫(35%) 1.0 氯化鈉 〇.〇1 離子交換水 38.99 5.38 0.04 無變化 2 硝酸(67.5%) 50.0 硫酸(62.5%) 10.0 過氧化氫(35%) 2.0 氯化銨 0.005 離子交換水 37.995 5.49 0.05 無變化 〇 硝酸(67.5%) 50.0 硫酸(62.5%) 10.0 間-硝基苯磺酸鈉 7.〇 氯化鈉 0.01 離子交換水 32.99 5.26 0.05 無變化 4 硝酸(67.5%) 30.0 硫酸(62.5%) 10.0 過氧化氫(3 5%) 1.0 氯化錢 〇.〇1 離子交換水 58.99 4·67 0.05 無變化 5 硝酸(67.5%) 30.0 硫酸(62.5%) 10.0 過氧化氫P 5%) 1.0 氯化鈉 〇.〇5 PEG 400 2.0 離子交換水 56.95 4.22 0.05 無變化 6 硝酸(67.5%) 30.0 硫酸(62.5%) 10.0 鹽酸(35%) 0.5 間-硝基苯磺酸鈉 8.0 離子交換水 51.5 1.28 0.05 無變化 7 硝酸(67.5%) 30.0 1 硫酸(62.5%) 10.0 鹽酸(35。/。) 0.5 硝酸鉀 1〇.〇 PEG-400 0.1 離子交換水 49.4 1.31 0.04 無變化 (注)PEG 400爲平均分子量400之聚乙二醇\\ 312 \ 2D-CODE \ 89-ll \ 89117064.ptd Page 9 508374 V. Description of the invention (7) Composition of example number (wt%) Nickel peeling speed (β m / min) Copper erosion speed (β m / min) Changes on copper surface 1 Nitric acid (67.5%) 50.0 Sulfuric acid (62.5%) 10.0 Hydrogen peroxide (35%) 1.0 Sodium chloride 0.001 Ion exchange water 38.99 5.38 0.04 No change 2 Nitric acid (67.5%) 50.0 Sulfuric acid (62.5%) 10.0 Hydrogen peroxide (35%) 2.0 Ammonium chloride 0.005 Ion-exchanged water 37.995 5.49 0.05 No change 0 Nitric acid (67.5%) 50.0 Sulfuric acid (62.5%) 10.0 Sodium meta-nitrobenzenesulfonate 7.0 Sodium chloride 0.01 Ion exchange water 32.99 5.26 0.05 No change 4 Nitric acid (67.5%) 30.0 Sulfuric acid (62.5%) 10.0 Hydrogen peroxide (3 5%) 1.0 Chlorin chloride 0.001 Ion exchange water 58.99 4.67 0.05 No change 5 nitric acid (67.5%) 30.0 sulfuric acid (62.5%) 10.0 hydrogen peroxide P 5%) 1.0 sodium chloride 0.05 PEG 400 2.0 ion-exchanged water 56.95 4.22 0.05 no change 6 nitric acid (67.5%) 30.0 sulfuric acid (62.5%) ) 10.0 Hydrochloric acid (35%) 0.5 Sodium m-nitrobenzenesulfonate 8.0 Ion-exchanged water 51.5 1.28 0.05 No change 7 Nitric acid (67.5%) 30.0 1 Sulfuric acid (62.5%) 10.0 Hydrochloric acid (35./ ) 0.5 PEG-400 0.1 1〇.〇 potassium ion-exchanged water 0.04 49.4 1.31 No change (Note) PEG 400 is polyethylene glycol of average molecular weight 400

89117064.ptd 第10頁 508374 五、發明說明(8) 表289117064.ptd Page 10 508374 V. Description of the invention (8) Table 2

實施例 編號 組成(重量%) 鎳剝離速度 (β m/min) 銅侵蝕速度 (β m/min) 銅表面之變化 比較例 1 硝酸(67.5%) 4.0 硫酸(62.5%) 10.0 過氧化氫(35%) 1.0 氯化鈉 〇.〇1 離子交換水 84.9 0.34 0.05 無變化 比較例 2 硝酸(67.5%) 85.0 硫酸(62.5%) 10.0 過氧化氫(35%) 1.0 氯化銨 〇·〇1 離子交換水 3.99 0.05 0.642 變色且變成 紅黑 比較例 3 硝酸(67.5%) 50.0 硫酸(62.5%) 10.0 過氧化氫(35%) 1.0 離子交換水 39.0 5.38 0.656 變色且變成 紅黑 比較例 4 硝酸(67.5%) 50.0 硫酸(62.5%) 10.0 過氧化氫(35%) 1.0 PEG 400 0.1 離子交換水 38.9 5.37 0.741 變色且變成 紅黑 (注)PEG 400爲平均分子量400之聚乙二醇 89117064.ptd 第11頁 五、發明說明(9) 硝酸濃度為低 對銅的外觀不產生變π。相對地 刻速度慢,而本明蝕刻液之情況(比較例丨)為禮6/^, 態化且幾乎無法剝離情況(比較例2)為令鎳純 4)則鎳的蝕刻速度雖快, ^虱離子之情況(比較例3及 實施、 仁銅的蝕刻大。 將表3所示成分混合,且制 速度、銅侵蝕速度及銅奈衣蝕刻液。所得液之鎳蝕刻 結果示於表3。 無纟交色為同實施例1調查。 又’於聚醯亞胺基材上 鍍膜後,以鍍阻物形成電電解鍍鎳形成厚度〇.5 //m之 銅電路。其後,將鏡逆:^其次以電鍵銅形成 試驗基板於25 t之蝕刻液中读、、主衣八作/式驗基板。將所得之 4 0 0倍之顯微鏡觀察截面,铜又杏貝=鐘後取出、切斷並以 結果示於表3。 —銅圖型下之鎳的副蝕刻。Example No. Composition (wt%) Nickel peeling speed (β m / min) Copper erosion speed (β m / min) Changes in copper surface Comparative Example 1 Nitric acid (67.5%) 4.0 Sulfuric acid (62.5%) 10.0 Hydrogen peroxide (35 %) 1.0 Sodium chloride 0.001 Ion-exchanged water 84.9 0.34 0.05 No change Comparative Example 2 Nitric acid (67.5%) 85.0 Sulfuric acid (62.5%) 10.0 Hydrogen peroxide (35%) 1.0 Ammonium chloride 0.001 Ion exchange Water 3.99 0.05 0.642 Discoloration and red and black Comparative Example 3 Nitric acid (67.5%) 50.0 Sulfuric acid (62.5%) 10.0 Hydrogen peroxide (35%) 1.0 Ion exchange water 39.0 5.38 0.656 Discoloration and red and black Comparative Example 4 Nitric acid (67.5% ) 50.0 Sulfuric acid (62.5%) 10.0 Hydrogen peroxide (35%) 1.0 PEG 400 0.1 Ion-exchanged water 38.9 5.37 0.741 Discoloration and red and black (Note) PEG 400 is a polyethylene glycol with an average molecular weight of 40089117064.ptd page 11 V. Description of the invention (9) Low concentration of nitric acid will not change the appearance of copper. The etching speed is relatively slow, and in the case of the present etchant (Comparative Example 丨) is 6 / ^, and the state of the liquid is almost impossible to peel (Comparative Example 2) is to make the nickel pure 4) Although the etching speed of nickel is fast, ^ In the case of lice ions (Comparative Example 3 and implementation, the etching of copper is large. The ingredients shown in Table 3 are mixed, and the production rate, copper erosion rate, and copper Nai Yi etching solution. The nickel etching results of the obtained solution are shown in Table 3 The colorless cross-color was investigated in the same manner as in Example 1. After coating on the polyimide substrate, a copper electrode with a thickness of 0.5 // m was formed by using electroplated nickel to form a resist. Mirror inverse: ^ Secondly, the test substrate is formed with electrical bond copper in an etching solution of 25 t, and the main coat is used as a test substrate. The cross section of the microscope is observed at 400 times, and the copper and apricot are removed after the bell. , Cut off and show the results in Table 3.-Secondary etching of nickel in copper pattern.

508374 五、發明說明(ίο) 表3 實施例 編號 組成(重量%) 鎳剝離速度 (β m/min) 銅侵蝕速度 (β m/min) 側蝕刻 銅表面之 外觀 8 硝酸(67.5%) 50.0 fcW(62.5%) 10.0 過氧化氫(35%) 1.0 氯化鈉 0.01 2-氯-吼D疋 1.0 離子交換水 37.99 5.27 0.04 Μ y \\\ 無變化 9 硝酸(67.5%) 50.0 硫酸(62.5%) 1〇.〇 過氧化氫(35%) 2.0 氯化銨 0.005 2-胺基-_定 2.0 離子交換水 35.995 5.33 0.05 te 無變化 10 硝酸(67.5%) 50.0 硫酸(62.5%) 1〇.〇 m-硝基苯磺酸鈉 7.0 氯化鈉 〇.〇1 3-羥基吡啶 4.0 離子交換水 28.99 5.12 0,05 4a 無變化 11 硝酸(67.5%) 30.0 硫酸(62·5%) 1〇.〇 過氧化氫(35%) 1.0 氯化銨 〇.〇1 2-氯-咖定 0.2 離子交換水 58.79 4.66 0.05 M j \\\ 無變化 画画11!1 89117064.ptd 第13頁 508374 五、發明說明(11) 如表3所示般,本發明之蝕刻液為鎳之蝕刻速度快,且 銅之侵蝕極少,對銅之外觀不產生變化。又,未觀察到銅 圖型下之錄的溶解(侧I虫刻)。 [發明之效果] 若根據本發明,則可提供鎳或鎳合金之蝕刻速度快,且 其他以外之金屬、特別是銅和銅合金之侵蝕為極少之鎳或 鎳合金之蝕刻液。 更且,若根據本發明,則可提供幾乎不產生副蝕刻之鎳 或鎳合金之钱刻液。508374 V. Description of the invention (ίο) Table 3 Example number composition (% by weight) Nickel peeling speed (β m / min) Copper erosion speed (β m / min) Appearance of side-etched copper surface 8 Nitric acid (67.5%) 50.0 fcW (62.5%) 10.0 Hydrogen peroxide (35%) 1.0 Sodium chloride 0.01 2-Chloro-Hou D 疋 1.0 Ion-exchanged water 37.99 5.27 0.04 Μ y \\\ No change 9 Nitric acid (67.5%) 50.0 Sulfuric acid (62.5%) 10.0 Hydrogen peroxide (35%) 2.0 Ammonium chloride 0.005 2-Amine-Amine 2.0 Ion-exchanged water 35.995 5.33 0.05 te No change 10 Nitric acid (67.5%) 50.0 Sulfuric acid (62.5%) 10.0m -Sodium nitrobenzene sulfonate 7.0 Sodium chloride 0.001 3-hydroxypyridine 4.0 Ion exchange water 28.99 5.12 0,05 4a No change 11 Nitric acid (67.5%) 30.0 Sulfuric acid (62 · 5%) 10.0% Hydrogen oxide (35%) 1.0 Ammonium chloride 〇〇〇 2-Chlorodine 0.2 Ion exchange water 58.79 4.66 0.05 M j \\\ No change drawing 11! 1 89117064.ptd Page 13 508374 5. Description of the invention (11) As shown in Table 3, the etching solution of the present invention is nickel with a high etching speed, and the corrosion of copper is very small, and the appearance of copper is not changed. Also, no dissolution was observed in the copper pattern (side I worm). [Effects of the Invention] According to the present invention, it is possible to provide an etching solution for nickel or a nickel alloy which has a fast etching rate of nickel or a nickel alloy and has little erosion of metals other than copper, especially copper and copper alloys. Furthermore, according to the present invention, a nickel etching solution of nickel or a nickel alloy which hardly causes sub-etching can be provided.

89117064. pul 第14頁 508374 圖式簡單說明 89117064.ptd 第15頁89117064.pul page 14 508374 Schematic description 89117064.ptd page 15

Claims (1)

六、申請專利範圍 金屬混ίϊϋίί:::'夜,其為由鎳或鎳合金與其他 崎,構,成之選擇性地姓刻鎳或鎳合金之 40重詈% ()硝酸5〜55重量%、(Β)硫酸〇.5〜 出之主^ )過軋化物、硝酸鹽及芳香族硝基化合物所選 〇/之Ρ户匕劑〇.1〜20重量%及(〇氯離子〇. 〇〇〇1〜0. 5重量 /0之水〉谷液所構成。 里 化2入L申及專利範圍第1項記載之餘刻液,其為含… 化ΰ物0·〇ι〜6重量%。 人3广:? f刻*,其特徵為令鎳或鎳合金、與其他金屬混 口 j奮旦《»材料,以含有(A)硝酸5〜55重量%、(B)硫酸0.5 =重里(C)過氧化物、硝酸鹽及芳香族硝基化合物所 ^出之主乳化劑0. i〜20重量%及(1))氯離子〇· 〇〇〇1〜〇. 5重 $ %之水溶液所構成。 4·如申請專利範圍第3項記載之蝕刻法,豆 液為含有吡啶化合物0·01〜6重量%。 八〒別迮^合Sixth, the scope of the patent application: Metal mixture :: 'Ye, which is made of nickel or nickel alloy and other saki, and is made of 40% by weight of nickel or nickel alloy. () 5 to 55 weight of nitric acid %, (B) sulphuric acid 0.5 to ^) Over-rolled products, nitrates and aromatic nitro compounds selected 〇 / P family dagger agent 0.1 to 20% by weight and (〇 chloride ion. 〇〇〇1 ~ 0.5 重量 / 0 的 水〉 谷 液。 Lihua 2 into the L application and the remainder of the solution described in the first item of the patent scope, which contains ... chemical compounds 0 · 〇ι ~ 6 %% by weight. Person 3:? F carved *, characterized by mixing nickel or nickel alloys with other metals. Fendan "» material, containing (A) 5 to 55% by weight nitric acid, (B) 0.5 sulfuric acid = 重 里 (C) The main emulsifier from peroxide, nitrate and aromatic nitro compound 0. i ~ 20% by weight and (1)) chloride ion 〇 · 〇〇〇〇1〜〇. 5 重 $ % Aqueous solution. 4. According to the etching method described in item 3 of the scope of patent application, the soybean solution contains 0.01 to 6% by weight of a pyridine compound. Hachijo, don't 迮 ^ 合
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