KR101070170B1 - Nickel etchant composition - Google Patents
Nickel etchant composition Download PDFInfo
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- KR101070170B1 KR101070170B1 KR1020030087621A KR20030087621A KR101070170B1 KR 101070170 B1 KR101070170 B1 KR 101070170B1 KR 1020030087621 A KR1020030087621 A KR 1020030087621A KR 20030087621 A KR20030087621 A KR 20030087621A KR 101070170 B1 KR101070170 B1 KR 101070170B1
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 18
- 239000000203 mixture Substances 0.000 title description 6
- 238000005530 etching Methods 0.000 claims abstract description 42
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000654 additive Substances 0.000 claims abstract description 13
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical group [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 5
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 5
- 150000007522 mineralic acids Chemical class 0.000 abstract description 5
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 21
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229940010514 ammonium ferrous sulfate Drugs 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- IMBKASBLAKCLEM-UHFFFAOYSA-L ferrous ammonium sulfate (anhydrous) Chemical compound [NH4+].[NH4+].[Fe+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O IMBKASBLAKCLEM-UHFFFAOYSA-L 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
본 발명에 따른 언더범프메탈에 대한 에칭 용액은 황산 40 내지 80 중량%, 무기산 0.1 내지 10 중량%, NO3 - 함유 첨가제 0.1 내지 5 중량% 및 잔량의 물을 함유한다. 본 발명에 따른 에칭 용액을 사용하면 니켈로 이루어진 언더범프메탈을 에칭할수 있으며, 아울러 에칭 용액에 기인한 금속의 오염을 방지하여 최종 수득되는 반도체의 수율 저하를 막을 수 있다. The etching solution for the under bump metals according to the invention is 40 to 80% by weight of sulfuric acid, an inorganic acid 0.1 to 10 wt.%, NO 3 - containing additive contains 0.1 to 5% by weight and the residual amount of water. By using the etching solution according to the present invention, it is possible to etch the under bump metal made of nickel, and also to prevent the contamination of the metal due to the etching solution, thereby preventing the yield reduction of the finally obtained semiconductor.
에칭 용액, 황산, 무기산, NO3- 함유 첨가제, 니켈, 웨이퍼 범핑 공정, 플립칭 본딩 방식, 언더범프메탈 Etching Solution, Sulfuric Acid, Inorganic Acid, NO3-Containing Additives, Nickel, Wafer Bumping Process, Flipping Bonding Method, Under Bump Metal
Description
도 1은 본 발명의 실시예 9의 에칭 용액에 의해 식각된 니켈 금속의 표면을 보여준다.1 shows the surface of nickel metal etched by the etching solution of Example 9 of the present invention.
도 2는 본 발명에 따른 실시예 10의 에칭 용액에 의해 식각된 니켈 금속의 표면을 보여준다.2 shows the surface of nickel metal etched by the etching solution of Example 10 according to the present invention.
도 3은 본 발명에 따르지 않는 에칭 용액에 의해 식각된 니켈 금속의 표면을 보여준다.3 shows the surface of nickel metal etched by an etching solution that is not in accordance with the present invention.
본 발명은 니켈의 에칭 용액, 더욱 구체적으로는 웨이퍼 범핑(Wafer Bumping) 공정 중에 생성되는 언더 범프 메탈을 구성하는 니켈을 식각할 수 있는 에칭 용액에 관한 것이다.The present invention relates to an etching solution of nickel, more specifically to an etching solution capable of etching nickel constituting the under bump metal produced during the wafer bumping process.
반도체 칩의 패키징 방법에는 종래 칩과 리더 프레임을 연결하는 와이어 본딩 (Wire Bonding)방식이 사용되었으나, 반도체가 고도로 집적화 되면서 웨이퍼상에 범핑하여 리드 프레임의 역할을 하는 솔더 범프(Solder Bump)를 형성하고, 이를 직접 패키지나 기판에 연결하는 플립칩(Flip Chip Bonding) 본딩 방식이 최근 많이 사용되고 있다. In the semiconductor chip packaging method, a conventional wire bonding method for connecting a chip and a leader frame is used, but as the semiconductor is highly integrated, a bump is formed on the wafer to form a solder bump that serves as a lead frame. In recent years, a flip chip bonding method of directly connecting the same to a package or a substrate has been widely used.
플립칩 본딩 방식은 구체적으로 웨이퍼 범핑 공정으로 진행되는데, 웨이퍼 범핑 공정은 크게 언더 범퍼 메탈 (Under Bump metallurgy: 이하 UBM이라 한다) 제조 공정과 솔더 범핑 공정으로 구성된다. The flip chip bonding method is specifically a wafer bumping process, and the wafer bumping process is largely composed of an under bumper metallurgy (UBM) manufacturing process and a solder bumping process.
UBM 제조에 사용되는 기술은 스퍼터링을 이용한 건식도금방식이나, 무전해 도금을 이용한 습식도금 방식을 이용한 것으로서, Ni-V, Ni 혹은 Ni-Fe의 UBM을 형성한후 그 위에 포토레지스트층을 만들고 노광 현상후 특정 패턴의 형상으로 만들고, 목적하는 형상의 UBM을 만들 수 있도록 니켈 또는 니켈 합금층을 에칭 용액으로 식각한다. The technology used to manufacture UBM is a dry plating method using sputtering or a wet plating method using electroless plating. After forming a UBM of Ni-V, Ni or Ni-Fe, a photoresist layer is formed thereon and exposed. After development, a specific pattern is formed, and the nickel or nickel alloy layer is etched with an etching solution so as to produce a desired shape of UBM.
니켈 또는 니켈 합금의 에칭 용액로는, USP 5,560,840에 개시된 바와 같이, 황산철암모늄의 수용액과 황산 또는 인산 혹은 그의 혼합물을 함유한 에칭 용액가 있는데, 이러한 이는 금속이온이 함유되어 있어, 니켈 또는 니켈 합금의 에칭시 금속이온에 의한 오염이 발생하여, 제조되는 반도체의 수율이 저하되는 문제점을 가지고 있다.Etching solutions of nickel or nickel alloys include etching solutions containing aqueous solutions of ammonium ferrous sulfate and sulfuric acid or phosphoric acid or mixtures thereof, as disclosed in US Pat. No. 5,560,840, which contain metal ions, Contamination occurs due to metal ions during etching, and the yield of the semiconductor to be produced is reduced.
본 발명은 이와 같은 문제점을 해결하기위해 다각도로 노력한 결과, 니켈의 에칭시 에칭 용액에 기인한 금속 이온 오염이 발생하지 않는 신규 에칭 용액를 개발하였다. As a result of various efforts to solve this problem, the present invention has developed a novel etching solution that does not cause metal ion contamination due to the etching solution during etching of nickel.
본 발명의 신규 에칭 용액은 황산 40 내지 80 중량%, 무기산 0.1 내지 10 중 량%, NO3 - 함유 첨가제 0.1 내지 5 중량% 및 잔량의 물을 함유한다.New etching solution of the present invention is 40 to 80% by weight sulfuric acid,% by weight of inorganic acids of 0.1 to 10, NO 3 - containing additive contains 0.1 to 5% by weight and the residual amount of water.
본 발명의 에칭 용액은 바람직하게는 황산 45 내지 70 중량%, 무기산 1 내지 5 중량%, NO3 - 함유 첨가제 0.1 내지 0.5 중량% 및 잔량의 물을 함유한다.It contains water containing additive from 0.1 to 0.5% by weight and a residual amount-etching solution of the present invention is preferably 45 to 70% by weight sulfuric acid, mineral acid of 1 to 5 wt.%, NO 3.
본 발명의 에칭 용액은 황산을 주 성분으로 하고 있으며, 금속 이온을 함유하고 있지 않기 때문에, UBM을 구성하는 니켈의 에칭시에 금속이온에 의한 오염의 문제를 줄일 수 있으므로 반도체 제조의 수율을 증가시킬 수 있다.Since the etching solution of the present invention contains sulfuric acid as a main component and does not contain metal ions, it is possible to reduce the problem of contamination by metal ions during the etching of nickel constituting the UBM, thereby increasing the yield of semiconductor manufacturing. Can be.
본 발명의 에칭 용액에 사용되는 황산은 순도가 99.9% 이상인 것으로서 금속 불순물이 없는 것이 바람직하다.Sulfuric acid used in the etching solution of the present invention has a purity of 99.9% or more and is preferably free of metal impurities.
본 발명의 에칭 용액에 사용되는 무기산은 질산, 과염소산, 염산 등을 사용할 수 있으며, 순도가 99.9%이상 인 것으로서 금속 불순물이 없는 것이 바람직하다. As the inorganic acid used in the etching solution of the present invention, nitric acid, perchloric acid, hydrochloric acid and the like can be used, and the purity is 99.9% or more, and it is preferable that there are no metallic impurities.
본 발명의 에칭 용액 사용되는 NO3 - 함유 첨가제는 질산철, 질산암모늄, 질산칼륨, 및 질산나트륨으로 구성된 군에서 선택된 것이 사용될 수 있다. 이러한 첨가제는 에칭후 금속이온에 기인한 찌꺼기가 에칭 표면에 남지 않도록 해주는 역할을 한다.NO 3 used etching solution of the invention containing additive may be used is selected from the group consisting of iron nitrate, ammonium nitrate, potassium nitrate, and sodium nitrate. These additives serve to prevent debris due to metal ions after etching from remaining on the etching surface.
본 발명에 사용되는 물은 탈이온수로서 금속 불순물이 없는 것이 바람직하다.The water used in the present invention is preferably deionized water and free of metallic impurities.
실시예 Example
이하 본 발명은 하기 실시예를 바탕으로 상세히 기술하겠으나, 본 발명이 이들 실시예로만 한정되지는 않는다.Hereinafter, the present invention will be described in detail based on the following examples, but the present invention is not limited only to these examples.
실시예 1 내지 9Examples 1-9
알루미늄 금속판위에 300 마이크론의 두께로 니켈 금속을 스퍼터링 방법으로 형성한후 하기 표 1에서 볼수 있는 바와 같이, 황산, 질산(무기산), 질산철(NO3 - 함유 첨가제) 및 물로 구성된 에칭 용액을 가진 배스에 5분간 침적시켜 식각한 후 탈이온수로 세정하고, 에칭된 표면을 주사전자현미경(SEM, Hitach S-4700, 배율 50,000 배)으로 관측하여 에칭 속도를 측정하고 그의 표면에 잔사가 남아 있는지 여부를 확인하고, 그 결과를 표 1에 나타내었다. 에칭속도는 SEM 사진을 근거로 하기식에 따라 계산된다. To after the nickel metal with a 300 micron thick on an aluminum metal sheet formed by a sputtering method as is seen in Table 1, sulfuric acid (inorganic acid), iron nitrate (NO 3 - containing additive) and water bath with the configured etching solution After immersion in water for 5 minutes and etched and washed with deionized water, the etched surface was observed by scanning electron microscope (SEM, Hitach S-4700, 50,000 times magnification) to measure the etching rate and to determine whether there was any residue on the surface. It confirmed, and the result is shown in Table 1. The etching rate is calculated according to the following formula based on the SEM photograph.
에칭속도 = (에칭전 두께 - 에칭후 두께)/에칭 시간Etch rate = (Thickness before etching-thickness after etching) / Etching time
황산을 함량을 변화시키면서 니켈 금속을 식각한 결과, 에칭 속도는 황산의 함량 증가에 따라 증가하였으나, 표면에는 어떠한 잔사도 발생하지 않았다.As the nickel metal was etched with varying sulfuric acid content, the etching rate increased with increasing sulfuric acid content, but no residue was generated on the surface.
특히, 도 1는 본 발명의 실시예 9의 에칭 용액에 의해 식각된 니켈 금속의 표면을 보여주는데, 잔사가 없음을 알수 있다.In particular, Figure 1 shows the surface of the nickel metal etched by the etching solution of Example 9 of the present invention, it can be seen that there is no residue.
실시예 10Example 10
표 1에 기재된 실시예 9의 구성성분에서 NO3 - 함유 첨가제로 질산철 대신 질산암모늄을 사용한 것이외에는 상기 실시예와 동일한 조성비로 평가하였다. 그 결 과는 표 1에 나타내었다. 도 2는 본 발명에 따른 실시예 10의 에칭 용액에 의해 식각된 니켈 금속의 표면을 보여주는데, 잔사가 없음을 알수 있다.The composition ratio of Example 9 in Table 1 was evaluated in the same composition as in the above example except that ammonium nitrate was used instead of iron nitrate as the NO 3 − -containing additive. The results are shown in Table 1. Figure 2 shows the surface of the nickel metal etched by the etching solution of Example 10 according to the present invention, it can be seen that there is no residue.
비교예 1Comparative Example 1
표 1에 기재된 실시예 6의 구성성분에서 NO3 - 함유 첨가제인 질산철을 사용하지 않은 것이외에는 상기 실시예와 동일한 조성비로 평가하였다. 도 3은 그 결과는 잔사가 발생하였음을 알수 있다. In the composition of Example 6 shown in Table 1 NO 3 - except that did not use the iron nitrate-containing additive was evaluated by the same composition ratios as in the above embodiment. 3 shows that the result is residue.
(중량%)Sulfuric acid
(weight%)
(중량%)nitric acid
(weight%)
(중량%)water
(weight%)
(Å/sec)Etching speed
(Å / sec)
발생Residue
Occur
1Comparative example
One
본 발명에 따른 에칭 용액을 사용하면 니켈로 이루어진 언더범프메탈을 에칭할수 있으며, 아울러 에칭 용액에 기인한 금속의 오염을 방지하여 최종 수득되는 반도체의 수율 저하를 막을 수 있다.
By using the etching solution according to the present invention, it is possible to etch the under bump metal made of nickel, and also to prevent the contamination of the metal due to the etching solution, thereby preventing the yield reduction of the finally obtained semiconductor.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030087621A KR101070170B1 (en) | 2003-12-04 | 2003-12-04 | Nickel etchant composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030087621A KR101070170B1 (en) | 2003-12-04 | 2003-12-04 | Nickel etchant composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20050054270A KR20050054270A (en) | 2005-06-10 |
| KR101070170B1 true KR101070170B1 (en) | 2011-10-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030087621A KR101070170B1 (en) | 2003-12-04 | 2003-12-04 | Nickel etchant composition |
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| Country | Link |
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| KR (1) | KR101070170B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105401210A (en) * | 2015-11-30 | 2016-03-16 | 惠州市博美化工制品有限公司 | Environment-friendly stainless steel substrate plating stripping agent |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101590258B1 (en) * | 2014-07-04 | 2016-02-01 | 오씨아이 주식회사 | Etching composition for metal layer comprising nickel |
| CN112064028B (en) * | 2020-09-14 | 2022-09-16 | 深圳市志凌伟业光电有限公司 | Etching liquid for composite copper film structure |
| CN112087878B (en) * | 2020-09-14 | 2022-05-20 | 深圳市志凌伟业光电有限公司 | Etching method of composite copper film structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000212772A (en) | 1999-01-26 | 2000-08-02 | Mec Kk | Nickel peeling solution |
| JP2001040490A (en) | 1999-07-27 | 2001-02-13 | Mec Kk | Microetching agent for iron-nickel alloy and surface roughening method suing it |
| JP2001140084A (en) * | 1999-08-27 | 2001-05-22 | Mec Kk | Etching solution for nickel or nickel alloy |
-
2003
- 2003-12-04 KR KR1020030087621A patent/KR101070170B1/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000212772A (en) | 1999-01-26 | 2000-08-02 | Mec Kk | Nickel peeling solution |
| JP2001040490A (en) | 1999-07-27 | 2001-02-13 | Mec Kk | Microetching agent for iron-nickel alloy and surface roughening method suing it |
| JP2001140084A (en) * | 1999-08-27 | 2001-05-22 | Mec Kk | Etching solution for nickel or nickel alloy |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105401210A (en) * | 2015-11-30 | 2016-03-16 | 惠州市博美化工制品有限公司 | Environment-friendly stainless steel substrate plating stripping agent |
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| KR20050054270A (en) | 2005-06-10 |
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