KR101284390B1 - Method for fabricating array substrate for a liquidcrystal display device - Google Patents

Abstract

The present invention relative to the total weight of the composition _{a) Fe (NO 3) 3} 1 to 10 weight%, b) also 0.1 to 2% by weight of a fluorine compound, c) HNO ₃ 2 to 20 weight%, d) tetra-based compounds 0.1 To 5% by weight, and e) an molybdenum / aluminum double film and an indium oxide film including 68 to 96% by weight of water, and a method of manufacturing an array substrate for a liquid crystal display device using the same.

Molybdenum / aluminum, indium oxide, etchant

Description

Method for fabricating array substrate for a liquidcrystal display device

1 is an electron scanning microscope photograph of the entire surface after etching molybdenum / aluminum double membrane with the etchant composition according to Example 1 of the present invention.

2 is an electron scanning microscope photograph of the entire surface of the indium oxide film after etching with the etchant composition according to Example 1 of the present invention.

3 is an electron scanning microscope photograph of the entire surface of the indium oxide film after etching with the etchant composition according to Comparative Example 1 of the present invention.

FIG. 4 is an electron scanning microscope photograph of the surface of the molybdenum / aluminum double layer etched in the composition of Example 1 of the present invention and then observed on its entire surface.

5 is an electron scanning microscope photograph of the entire surface of the indium oxide film after etching 1,000 sheets of the composition of Example 1 of the present invention.

FIG. 6 is an electron scanning microscope photograph of the entire surface of the molybdenum / aluminum double membrane etched with the etchant composition according to Comparative Example 2 of the present invention.

FIG. 7 is an electron scanning microscope photograph of the surface of the molybdenum / aluminum double membrane etched with an etchant composition according to Comparative Example 2 of the present invention and then observed on its entire surface.

8 is an electron scanning microscope photograph of the entire surface of the indium oxide film after etching with the etchant composition according to Comparative Example 2 of the present invention.

The present invention relates to an etchant composition for collectively etching a molybdenum / aluminum double film and an indium oxide film used as a gate electrode and a pixel electrode constituting a thin film transistor (TFT) of a flat panel display, and a method of manufacturing an array substrate for a liquid crystal display device using the same. It is about.

The process of forming the metal wiring on the substrate in the semiconductor device is typically composed of a metal film forming process by sputtering, a photoresist coating process, a process of forming a photoresist pattern in an optional region by exposure and development, and an etching process And washing processes before and after individual unit processes. Among the processes, an etching process refers to a process of leaving a metal film in a selective region by using a photoresist pattern as an etching mask, and typically, a dry etching using a plasma or the like, or a wet etching using an etching solution is used.

In semiconductor devices, the metal commonly used as the wiring material for thin film transistor-liquid crystal displays (TFT-LCDs) is aluminum or aluminum alloys, and pure aluminum has low chemical resistance and causes wiring bonding problems in subsequent processes. As such, it may be used in the form of an aluminum alloy, or a multilayered laminated structure having another metal layer, such as molybdenum, chromium, tungsten, tin or the like, on the aluminum or aluminum alloy layer may be used.

By the way, in the case of the Mo / Al double layer, for example, in the case of wet etching with a conventional aluminum etching solution mainly containing phosphoric acid, the upper Mo layer is lower because the etching rate of the upper Mo layer is smaller than that of the aluminum alloy layer. It shows a poor profile that has a cross section projecting out of the Al layer. This poor profile results in poor step coverage in subsequent processes and increases the likelihood that the top layer is disconnected from the slope or the upper and lower metals are shorted.

Recently, in order to solve the above problem, Korean Patent No. 10-0579511 discloses that a molybdenum / aluminum double layer may be collectively etched using an etchant consisting of Fe (NO ₃ ) ₃ , HNO ₃ , NH ₄ F, and HClO ₄ . We have presented a way to do this. However, when etching the molybdenum / aluminum double layer substrate with the etchant, there is a disadvantage that the amount of the substrate that can be etched is about 350 sheets. In general, when the substrate is etched with the etchant, the etched metal continues to accumulate in the etchant, thereby reducing the etching ability of the etchant and making the etching impossible. Further, if the indium oxide film is etched with the etchant, an indium oxide film residue remains.

In the technical field, an etching solution capable of etching a larger amount of substrates is required for cost reduction, and in the manufacture of an array substrate for a liquid crystal display device, a molybdenum / aluminum double used as a gate wiring as one etching solution to simplify the process There is a need to develop an etching solution capable of collectively etching an indium oxide film used as a film and a pixel electrode.

According to the present invention, a molybdenum / aluminum double film used as a gate wiring and an indium oxide film used as a pixel electrode can be collectively etched in a method of manufacturing an array substrate for a liquid crystal display device. It is an object of the present invention to provide an etchant composition capable of etching a substrate and having excellent economic efficiency.

In addition, an object of the present invention is to provide an etching method of the indium oxide film using the etching solution composition.

In addition, an object of the present invention is to provide a method for manufacturing an array substrate for a liquid crystal display device comprising the etching method of the indium oxide film.

In order to achieve the above object, the present invention relates to the total weight of the composition

a) Fe (NO ₃ ) ₃ 1-10 wt%;

b) 0.1 to 2% by weight of fluorine-containing compound;

c) 2 to 20 weight percent of HNO ₃ ;

d) 0.1 to 5 wt% of a tetrazole compound; And

e) 68-96 weight percent of water

It provides an etching solution composition of molybdenum / aluminum double film and indium oxide film comprising a.

In addition,

a) forming an indium oxide film on the substrate;

b) selectively leaving a photoreactive material on said indium oxide film; And

c) providing an etching method of the indium oxide film comprising etching the indium oxide film using the etching solution composition of the present invention.

In addition,

a) forming a gate electrode on a substrate;

b) forming a gate insulating layer on the substrate including the gate electrode;

c) forming a semiconductor layer on the gate insulating layer;

d) forming source and drain electrodes on the semiconductor layer; And

e) forming a pixel electrode connected to the drain electrode

And e) comprises forming an indium oxide film and etching the indium oxide film with the etchant composition of the present invention to form a pixel electrode. to provide.

In the present invention, the molybdenum / aluminum double film is a concept including molybdenum or molybdenum alloy / aluminum or aluminum alloy double film, and the indium oxide film is a concept including an indium zinc oxide film (IZO), an indium tin oxide film (ITO), or the like.

Hereinafter, the present invention will be described in detail.

The present invention relates to the total weight of the composition

a) Fe (NO ₃ ) ₃ 1 to 10% by weight, b) 0.1 to 2% by weight of fluorine-containing compound, c) 2 to 20% by weight of HNO ₃ , d) 0.1 to 5% by weight of tetrazole-based compound, and e) water It provides an etching solution composition of molybdenum / aluminum double film and indium oxide film comprising 68 to 96% by weight.

In the etchant composition according to the present invention, a) Fe (NO ₃ ) ₃ is used as a main oxidant for etching molybdenum / aluminum double film used as a gate wiring, and is used as an oxidant for etching an indium oxide film used as a pixel electrode. .

Fe (NO ₃ ) ₃ is preferably included 1 to 10% by weight relative to the total weight of the composition. If Fe (NO ₃ ) ₃ is less than 1% by weight, the etching may not be sufficient due to the lack of etching power, and if it exceeds 10% by weight, the etching rate for molybdenum may be high and the aluminum etching rate may be slow. When the molybdenum / aluminum double film is etched, the upper molybdenum may be etched to cause etching irregularities.

Fe (NO ₃ ) ₃ can be manufactured according to a conventionally known method, and it is especially preferable to have the purity for a semiconductor process.

In the etching solution composition according to the present invention, the b) fluorine-containing compound serves to speed up the etching rate of the aluminum and indium oxide film when etching the molybdenum / aluminum double film and the indium oxide film, and to remove the etching residue.

In the present invention, as the fluorine-containing compound, one or two or more selected from NH ₄ FHF, KFHF, NaFHF, KF, NaF, and the like are preferably used, and NH ₄ FHF is more preferable, but is not limited thereto.

The fluorine-containing compound is preferably included 0.1 to 2% by weight based on the total weight of the composition. When the fluorine-containing compound is less than 0.1% by weight, the etching rate of the molybdenum / aluminum bilayer is not only slowed, but also the indium oxide etching rate is slowed. When it exceeds 2% by weight, the aluminum etching rate is too fast and the molybdenum / aluminum An upper molybdenum overhang may occur when the double layer is etched, and an attack may be applied to the lower insulating layer of the indium oxide layer when the indium oxide layer is etched.

In the etchant composition according to the present invention, c) HNO ₃ speeds up the molybdenum / aluminum bilayer etching rate when etching the molybdenum / aluminum bilayer.

HNO ₃ is preferably included 2 to 20% by weight relative to the total weight of the composition. If HNO ₃ is less than 2% by weight, not only will the molybdenum / aluminum double-layer etch rate slow down, but molybdenum / double-layer residues may occur. If it exceeds 20% by weight, the molybdenum / aluminum double-layer etch rate will be too high. Difficult to control process time

In the etching solution composition according to the present invention, the d) tetrazole-based compound functions to greatly increase the amount of etching in etching the molybdenum / aluminum double film substrate used as the gate wiring. The taper etching of molybdenum / double layer is to control the galvanic effect so that the two metals are etched like one metal. When the amount of etching increases, the molybdenum and aluminum by the etchant accumulate into the etchant. It is a factor that changes the Galvanic effect. In the etchant composition according to the present invention, the tetrazole-based compound has a galvanic effect due to the metal accumulated in the etchant. By minimizing the change, the initial etching performance is maintained. In addition, tetrazole-based compounds minimize the possibility of residual film remaining by chelating molybdenum when etching molybdenum / aluminum bilayer substrates.

The tetrazole-based compound may be any compound having a tetrazole ring, 5-aminotetrazole, 1-alkyl-5-aminotetrazole, 5-hydroxy 5-hydroxy-tetrazole, 1-alkyl-5-hydroxy-tetrazole, tetrazol-5-thiol, 1- Compounds selected from alkyl-tetrazole-5-thiol or mixtures thereof are preferred, and alkyl of the alkyl-substituted tetrazole is preferably a C1 to C7 straight or branched alkyl group. In particular, 5-aminotetrazole (hereinafter referred to as “ATZ”) is more preferable.

The tetrazole-based compound is preferably included 0.1 to 5% by weight relative to the total weight of the composition. When the tetrazole-based compound is less than 0.1 wt%, the galvanic effect cannot be controlled as the etching amount of the molybdenum / aluminum bilayer substrate is increased, so that the etching rate may be slow or impossible to be etched, and the remaining molybdenum film may remain. In case of more than 5% by weight, the molybdenum / aluminum etching rate is too fast and difficult to control.

In the etchant composition according to the present invention, e) water is not particularly limited, but deionized water is preferred. More preferably, deionized water having a specific resistivity of 18 ㏁ / cm or more, which shows the degree of ions removed from the water, may be used.

The etchant composition according to the present invention may further include any additive commonly used in the art to improve etching performance. The additive is preferably included from 0.0001 to 0.01% by weight relative to the total weight of the composition.

As the additive, a surfactant, a sequestering agent, and a corrosion inhibitor may be used.

The surfactant serves to lower the surface tension to increase the uniformity of the etching. As such a surfactant, a surfactant which is resistant to an etching solution and has compatibility with the surfactant is preferable. Examples thereof include any anionic, cationic, zwitterionic or nonionic surfactant. Moreover, a fluorine-type surfactant can be used as surfactant.

The additive is not limited to this, but is a concept including various other additives known in the art in order to further improve the effect of the present invention.

The etchant composition according to the present invention has excellent etching characteristics for molybdenum / aluminum double films used as gate wirings in the manufacture of array substrates for liquid crystal display devices, and has a large amount of substrates to reduce the process cost, Also, the etching rate is faster than that of the conventional oxalic acid-based etching solution, and since the residue of the indium oxide film does not occur, it has an excellent characteristic of minimizing defects caused by the residue of the indium oxide film.

In addition,

a) forming an indium oxide film on the substrate;

b) selectively leaving a photoreactive material on said indium oxide film; And

c) providing an etching method of the indium oxide film comprising etching the indium oxide film using the etching solution composition of the present invention.

In addition,

a) forming a gate electrode on a substrate;

b) forming a gate insulating layer on the substrate including the gate electrode;

c) forming a semiconductor layer on the gate insulating layer;

d) forming source and drain electrodes on the semiconductor layer; And

e) forming a pixel electrode connected to the drain electrode

The step (a) comprises forming a molybdenum / aluminum double layer and etching with the etchant composition of any one of claims 1 to 8 to form a gate electrode, and step (e) forms an indium oxide film In addition, the present invention provides a method of manufacturing an array substrate for a liquid crystal display device, comprising the step of forming a pixel electrode by etching with the etchant composition of the present invention.

In the method for manufacturing an array substrate for a liquid crystal display device according to the present invention, the molybdenum / aluminum double film of step a) uses a vapor phase deposition method or a sputtering method.

In the method of manufacturing an array substrate for a liquid crystal display according to the present invention, in step (b), silicon nitride (SiN _x ) is deposited on a gate electrode formed on a substrate to form a gate insulating layer. Here, the material used in the formation of the gate insulating layer is not limited to silicon nitride (SiN _x ), but a material selected from various inorganic insulating materials including silicon oxide (SiO ₂ ) may be used to form the gate insulating layer have.

In the method of manufacturing an array substrate for a liquid crystal display device according to the present invention, in the step c), a semiconductor layer is formed on the gate insulating layer by chemical vapor deposition (CVD). That is, the active layer and the ohmic contact layer are formed sequentially, and then patterned by dry etching.

Here, the active layer is generally formed of pure amorphous silicon (a-Si: H), and the ohmic contact layer is formed of amorphous silicon (n ⁺ a-Si: H) containing impurities. Chemical vapor deposition (CVD) may be used to form the active layer and the ohmic contact layer, but is not limited thereto.

In the method of manufacturing an array substrate for a liquid crystal display device according to the present invention, the step d) comprises: d1) forming source and drain electrodes on the semiconductor layer; And d2) forming an insulating layer on the source and drain electrodes.

In step d1), a metal film is deposited and etched on the ohmic contact layer by sputtering to form a source electrode and a drain electrode. Here, the metal film is preferably provided with a single film or a multilayer film provided with at least one selected from the group consisting of aluminum, aluminum alloy, molybdenum and molybdenum alloy. The method of forming a metal film on a board | substrate and the material of a metal film are not limited only to what was illustrated above.

Wherein d2) step, including the inorganic insulating group, or benzocyclobutene (BCB) and acrylic (acryl) resins (resin) containing silicon nitride (SiN _x) and silicon oxide (SiO ₂₎ on the source and drain electrodes The organic insulating material is selected from the group of organic insulating materials to form an insulating layer as a single layer or a double layer. The material of the insulating layer is not limited to those illustrated above.

In the method of manufacturing an array substrate for a liquid crystal display according to the present invention, the pixel electrode connected to the drain electrode is formed in step e).

For example, a transparent conductive material such as an indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited through a sputtering method, and the pixel electrode is formed by etching the etching liquid composition according to the present invention. The method of depositing the indium oxide film is not limited to the sputtering method.

In such a method of manufacturing an array substrate for a liquid crystal display device, when the a) step of forming the gate electrode using the etchant composition according to the present invention is performed, a large amount of the gate substrate can be etched, thereby increasing the process cost. Significant savings can be achieved and the process can be simplified by reducing the number of etchant changes.

In addition, in the method of manufacturing an array substrate for a liquid crystal display device, an attack on a data line including a drain electrode disposed under the pixel electrode while having a high etching rate at a high etching rate during the etching process of the step e) using the etchant composition according to the present invention is performed. Since it can be minimized, it is possible to manufacture an excellent liquid crystal display array substrate that can improve the driving characteristics of the TFT-LCD, and to improve the productivity of the array substrate for liquid crystal display devices.

Hereinafter, embodiments according to the present invention will be described in detail. These examples are provided to explain the present invention in more detail, and the present invention is not limited thereto.

Examples 1-20: Preparation of Etch Liquid Composition

Fe (NO ₃ ) ₃ , NH ₄ FHF, HNO ₃ , and 5-aminotetrazole, which are semiconductor process grades, were mixed as shown in Table 1 below, and an etching solution was prepared by adding deionized water to a total of 100% by weight. It was.

Etchant composition (% by weight) Fe (NO _{3) 3} NH ₄ FHF HNO ₃ 5-aminotetrazole Deionized water Example 1 2.0 0.3 10 0.5 87.2 Example 2 2.0 0.4 10 0.5 87.1 Example 3 2.5 0.3 10 0.2 87.0 Example 4 3.0 0.3 10 0.5 86.2 Example 5 3.0 0.4 10 0.5 86.1 Example 6 3.0 0.5 10 0.5 86.0 Example 7 3.0 0.5 10 0.1 86.4 Example 8 3.0 0.5 10 0.2 86.3 Example 9 3.0 0.5 10 1.0 85.5 Example 10 3.0 0.5 10 3.0 83.5 Example 11 3.0 0.5 10 5.0 81.5 Example 12 3.0 0.5 15 0.5 81.0 Example 13 3.0 0.5 20 0.5 76.0 Example 14 3.5 0.5 10 0.5 85.5 Example 15 4.0 0.6 10 0.2 85.2 Example 16 4.0 0.7 10 0.5 84.8 Example 17 5.0 0.9 10 0.5 83.6 Example 18 5.0 0.8 20 0.5 73.7 Example 19 7.0 1.2 10 0.5 81.3 Example 20 9.0 1.5 5 0.5 84.0

Comparative Example 1: Preparation of Etch Liquid Composition

5% by weight oxalic acid and 95% by weight deionized water.

Comparative Example 2: Preparation of Etch Liquid Composition

An etching solution composition was prepared in which deionized water was added to 3 wt% FeNO ₃ , 0.4 wt% NH ₄ F, 10 wt% HNO ₃ , ₃ wt% HClO ₄ , and 100 wt% in total.

Test Example 1 Evaluation of Etch Characteristics of Molybdenum / Aluminum Double Film and Indium Oxide Film

About molybdenum / aluminum double film was sequentially deposited on the glass substrate by the sputtering method, and an indium oxide film was also deposited by the same method as described above. Test specimens were prepared. The test pieces were etched using the spray method with the etchant prepared in Examples 1-20 and Comparative Examples 1-2.

Using the electron scanning microscope (SEM; Hitach, S-4700), the test results of the test pieces prepared in Examples 1 to 20 and Comparative Examples 1 to 2 are shown in Table 2 and FIGS. 1 to 3. .

The criteria for evaluation of etching properties of molybdenum / aluminum double film and indium oxide film are as follows.

- Etching characteristics of molybdenum / aluminum double film

○: excellent etching characteristics

△: normal

×: bad etching characteristics

The poor etching characteristic means that the upper molybdenum protrusion phenomenon occurs.

- Etching Characteristics of Indium Oxide Film

○: no residue occurs,

×: residue is generated.

Etch Characteristics of Molybdenum / Aluminum Double Layers Etching Characteristics of Indium Oxide Example 1 ○ ○ Example 2 ○ ○ Example 3 ○ ○ Example 4 ○ ○ Example 5 ○ ○ Example 6 ○ ○ Example 7 ○ ○ Example 8 ○ ○ Example 9 ○ ○ Example 10 ○ ○ Example 11 ○ ○ Example 12 ○ ○ Example 13 ○ ○ Example 14 ○ ○ Example 15 ○ ○ Example 16 ○ ○ Example 17 ○ ○ Example 18 ○ ○ Example 19 ○ ○ Example 20 ○ ○ Comparative Example 1 × × Comparative Example 2 △ ×

As can be seen in Figure 1, the etchant composition according to Example 1 of the present invention exhibited excellent etching characteristics in the etching of molybdenum / aluminum double membrane, and also, as can be seen in Figure 2, by the same etchant composition Even after etching the surface of the indium oxide layer, the etching residue did not occur, indicating excellent etching characteristics of the etching liquid composition of the present invention.

In addition, as shown in Table 2, the etching liquid compositions of Examples 1 to 20 according to the present invention showed excellent etching characteristics.

On the other hand, as shown in Table 2, the etching liquid composition of Comparative Examples 1 and 2 was confirmed that both the etching characteristics of the molybdenum / aluminum double layer and the etching characteristics of the indium oxide film is poor. As shown in FIG. 3, in the etchant composition of Comparative Example 1, residues of an indium oxide film were generated after etching.

Test Example 2: Comparative Experiment on the Number of Treated Sheets

Using the etchant composition of Example 1 and the etchant composition of Comparative Example 2 was tested for the number of treatments. The substrate having the molybdenum / aluminum double film and the substrate having the indium oxide film were etched and evaluated in the same manner as in Example 1 above. The evaluation was conducted on 100 sheets, such as one sheet, 100 sheets, 200 sheets, and the number of sheets. The test results are shown in Table 3 below.

Evaluation criteria are the same as those of the etching characteristic evaluation of the molybdenum / aluminum double film and the indium oxide film.

Processing sheet (sheets) Example 1 Comparative Example 2 Mo / Al double membrane Indium oxide film Mo / Al double membrane Indium oxide film One ○ ○ ○ × 100 ○ ○ ○ × 200 ○ ○ ○ × 300 ○ ○ ○ × 400 ○ ○ × × 500 ○ ○ × × 600 ○ ○ × × 700 ○ ○ × × 800 ○ ○ × × 900 ○ ○ × × 1,000 ○ ○ × ×

In the molybdenum / aluminum surface etched by the etchant of Example 1, as shown in FIG. 4, the etching characteristics were excellent even after 1,000 sheets were treated. As shown in FIG. 5, the sheet was treated with indium oxide as shown in FIG. 5. No residue was generated on the indium oxide film even when 1,000 sheets were treated.

On the other hand, the etching liquid composition of Comparative Example 2, as can be seen in Figure 6, the initial etching characteristics appeared to be a normal level, but from the 400 sheet treatment, as shown in Figure 7 overhang of the upper molybdenum occurred, the treatment As the number increased, the degree was severe. In addition, in the case of the indium oxide film, as shown in FIG. 8, it was confirmed that residues were generated from the initial etching.

In the case of the molybdenum / aluminum double layer, if the upper molybdenum protrusion occurs, the step coverage is poor. If the indium oxide film remains, the TFT-LCD screen appears uneven due to the shortage and uniformity when the TFT is driven. Can be.

In the method of manufacturing an array substrate for a liquid crystal display device, during the etching process of the molybdenum / aluminum double film used as the gate wiring and the indium oxide film used as the pixel electrode, the etchant composition of the present invention is used in the case of the molybdenum / aluminum double film substrate. Even when the amount of the substrate is etched, the initial etching characteristics are maintained due to the minimized galvanic effect, and even when the indium oxide layer is etched with the same etching solution, the etching residues do not remain.

Therefore, according to the etching solution composition of the present invention, not only an excellent array substrate for liquid crystal display devices having improved driving characteristics of the liquid crystal display device can be manufactured at an economical price, but also the etching uniformity can be maintained even when the substrate size is large. Efficiency is maximized.

Claims (12)

About the total weight of the composition a) Fe (NO ₃ ) ₃ 1-10 wt%; b) 0.1 to 2% by weight of fluorine-containing compound; c) 2 to 20 weight percent of HNO ₃ ; d) 0.1 to 5 wt% of a tetrazole compound; And e) 68-96 weight percent of water An etchant composition of molybdenum / aluminum double film and indium oxide film comprising a. The etchant composition of claim 1, wherein the b) fluorine-containing compound is one or two or more selected from NH ₄ FHF, KFHF, NaFHF, KF, and NaF. The etchant composition of claim 2, wherein the b) fluorine-containing compound is NH ₄ HF. The method according to claim 1, d) tetrazole-based compound is 5-aminotetrazole, 1-alkyl-5-aminotetrazole, 5-hydroxy-tetrazole, 1-alkyl-5-hydroxy-tetrazole, tetrazole- An etchant composition of a molybdenum / aluminum double membrane and an indium oxide film, characterized in that it is one or a mixture of two or more selected from the group consisting of 5-thiol and 1-alkyl-tetrazol-5-thiol. The etchant composition according to claim 4, wherein the d) tetrazole-based compound is 5-aminotetrazole. The etchant composition of claim 1, wherein the e) water is deionized water. The etchant composition of claim 1, further comprising 0.0001 to 0.01% by weight of an additive based on the total weight of the composition. The etchant composition of claim 7, wherein the additive is at least one selected from a surfactant, a metal ion sequestrant, and a corrosion inhibitor. The etching solution composition according to any one of claims 1 to 8, wherein the indium oxide film is an indium zinc oxide film (IZO) or an indium tin oxide film (ITO). a) forming an indium oxide film on the substrate; b) selectively leaving a photoreactive material on said indium oxide film; And c) etching the indium oxide film by using the etching solution composition of any one of claims 1 to 8. a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate including the gate electrode; c) forming a semiconductor layer on the gate insulating layer; d) forming source and drain electrodes on the semiconductor layer; And e) forming a pixel electrode connected to the drain electrode The step (a) comprises forming a molybdenum / aluminum double layer and etching with the etchant composition of any one of claims 1 to 8 to form a gate electrode, and step (e) forms an indium oxide film And forming a pixel electrode by etching with the etchant composition according to any one of claims 1 to 8. A method of manufacturing an array substrate for a liquid crystal display device, characterized by the above-mentioned. The method of claim 11, wherein the array substrate for a liquid crystal display device is a thin film transistor (TFT) array substrate.

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