WO2011055915A2 - Etchant composition - Google Patents

Etchant composition Download PDF

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Publication number
WO2011055915A2
WO2011055915A2 PCT/KR2010/006956 KR2010006956W WO2011055915A2 WO 2011055915 A2 WO2011055915 A2 WO 2011055915A2 KR 2010006956 W KR2010006956 W KR 2010006956W WO 2011055915 A2 WO2011055915 A2 WO 2011055915A2
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WO
WIPO (PCT)
Prior art keywords
metal film
based metal
aluminum
molybdenum
titanium
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PCT/KR2010/006956
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French (fr)
Korean (ko)
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WO2011055915A3 (en
Inventor
신혜라
유인호
권오병
이유진
Original Assignee
동우 화인켐 주식회사
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Priority claimed from KR1020100097748A external-priority patent/KR101804572B1/en
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to JP2012536650A priority Critical patent/JP5788400B2/en
Priority to CN201080050506.3A priority patent/CN102597163B/en
Publication of WO2011055915A2 publication Critical patent/WO2011055915A2/en
Publication of WO2011055915A3 publication Critical patent/WO2011055915A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Definitions

  • the present invention can etch a triple layer made of a semiconductor device and a flat panel display device, in particular an indium metal film, an aluminum metal film, and a titanium or molybdenum metal film used for a gate, a source / drain array wiring, such as a TFT or an OLED. It relates to an etchant composition that can be.
  • a process of forming a metal wiring on a substrate is typically a process of forming a metal film by sputtering, a process of forming a photoresist in a selective region by applying a photoresist on a metal film, exposing and developing the metal film, and a metal. It consists of a process of etching the film. Moreover, the washing
  • This etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask. As an etching process, dry etching using a plasma or the like, or wet etching using an etching solution is generally used.
  • a transparent conductive film which is an indium metal film
  • a transparent conductive film is mainly used as a pixel electrode.
  • a metal film including titanium or molybdenum is mainly used as a buffer film under the source / drain electrode to bond the source / drain electrode to the insulating film.
  • Korean Patent Publication No. 10-2006-0104926 discloses an etchant composition comprising phosphoric acid, nitric acid, a water-soluble organic acid, an etchant, an etchant, and water.
  • the composition is effective in a single film composed of aluminum, nickel, additive metal, but the etching properties are not exhibited in the multi-layer.
  • An object of the present invention is a triple consisting of a metal film containing indium, a metal film containing aluminum, in particular, an aluminum lanthanum nickel alloy film, and a metal film containing titanium or molybdenum used as wiring in semiconductor devices and flat panel display devices. It is to provide an etching liquid composition capable of batch etching the membrane.
  • the present invention is 0.1 to 10% by weight based on the total weight of the composition; 0.1 wt% to 10 wt% nitric acid; 0.01 wt% to 5 wt% of a fluorine-containing compound; And an indium metal film, an aluminum metal film, and a titanium or molybdenum metal film including a residual amount of water.
  • the present invention comprises 1% to 7% by weight of the iron compound, based on the total weight of the composition; 2 wt% to 7 wt% nitric acid; 0.1 wt% to 2 wt% of a fluorine-containing compound; And an indium metal film, an aluminum metal film, and a titanium or molybdenum metal film including a residual amount of water.
  • an etchant composition of the triple layer further comprises 0.1 wt% to 5 wt% of the phosphate compound in the composition.
  • the etchant composition of the present invention can batch-etch a triple film made of a metal film containing indium, a metal film containing aluminum, and a metal film containing titanium or molybdenum to simplify the etching process and improve productivity.
  • the etchant composition of the present invention is excellent in etching characteristics because the etching rate is fast and there is no damage to the underlying film and equipment and uniform etching is possible.
  • the etchant composition of the present invention does not require expensive equipment configuration and is very economical because it is advantageous for large area.
  • the etchant composition of the present invention comprises an iron compound, nitric acid, a fluorine-containing compound and water.
  • the iron compound serves to oxidize the surface of the aluminum-based metal film and the titanium-based or molybdenum-based metal film.
  • the iron compound is preferably included in an amount of 0.1 wt% to 10 wt%, more preferably 1 wt% to 7 wt%, based on the total weight of the composition.
  • the etching rate of the metal film containing aluminum is lowered, and thus residues are generated.
  • uneven etching characteristics cause staining in the substrate. If the above range is exceeded, the metal film containing aluminum and the metal film containing titanium or molybdenum may be lost due to excessive etching speed.
  • the iron compound is not particularly limited, but for example FeCl 3 , Fe (NO 3 ) 3 , Fe 2 (SO 4 ) 3 , NH 4 Fe (SO 4 ) 2 , Fe (ClO 4 ) 3 , FePO 4 , Fe (NH 4) and the like 3 (C 2 O 4) 3 , may be used in each of these mixed alone, or two or more kinds.
  • the nitric acid serves to oxidize the surface of the aluminum-based metal film and the titanium or molybdenum-based metal film.
  • the nitric acid is preferably included in an amount of 0.1 wt% to 10 wt%, more preferably 2 wt% to 7 wt%, based on the total weight of the composition.
  • the etching rate decreases between the aluminum-based metal film and the titanium-based or molybdenum-based metal film.
  • staining may occur by causing an etching rate difference between the substrates to cause etching of a tailing phenomenon in the titanium-based or molybdenum-based metal film.
  • the fluorine-containing compound serves to etch the oxidized indium metal film, the oxidized aluminum metal film, and the titanium or molybdenum metal film below.
  • the fluorine-containing compound is preferably included in an amount of 0.01 wt% to 5 wt%, more preferably 0.1 wt% to 2 wt%, based on the total weight of the composition.
  • the aluminum-based metal film may have a low etching rate and may be caused by non-uniform etching characteristics in the substrate. If it exceeds the above-mentioned range, the aluminum-based metal film may be lost due to excessive etching speed, and the titanium-based or molybdenum-based metal film, which is a lower film, may be damaged.
  • the fluorine-containing compound is not particularly limited but is preferably a compound capable of dissociating into fluorine ions or polyatomic fluorine ions.
  • ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride, potassium bifluoride, or the like may be used as the fluorine-containing compound. These can be used individually or in mixture of 2 or more types, respectively.
  • water means deionized water.
  • the water is used for the semiconductor process, preferably water of 18 dl / cm or more.
  • the water is included in the balance so that the total weight of the etchant composition of the present invention to 100% by weight relative to the total weight of the composition.
  • the etchant composition of the present invention may further include a phosphate compound in addition to the essential components.
  • a phosphate compound it is more suitable for the batch etching of the triple film whose lower film is a molybdenum type metal film.
  • the phosphate compound serves to improve the taper profile and to control the etching rate of the aluminum-based metal film and the molybdenum-based metal film.
  • the phosphate compound may be included in an amount of 0.1 wt% to 5 wt%, more preferably 0.1 wt% to 2 wt%, based on the total weight of the composition.
  • the etching rate of the aluminum-based metal film and the molybdenum-based metal film can be easily adjusted, and uniform etching characteristics can be realized.
  • the phosphate compound is preferably one or two or more selected from the group consisting of salts in which one to three hydrogens are substituted with an alkali metal or an alkaline earth metal in phosphoric acid, but is not limited thereto.
  • the phosphate compound may be selected from the group consisting of sodium dihydrogen phosphate, potassium dihydrogen phosphate, and mixtures thereof.
  • the etchant composition of the present invention may contain one or two or more other additives such as an etch control agent, a surfactant, a metal ion sequestrant, and a corrosion inhibitor in addition to the above-mentioned components.
  • the indium-based metal film may be, for example, an indium zinc oxide film (IZO), an indium tin oxide film (ITO), or the like as the transparent conductive film.
  • IZO indium zinc oxide film
  • ITO indium tin oxide film
  • an aluminum type metal film means the aluminum single film or the aluminum alloy film which has aluminum as a main component. It is preferable that the aluminum alloy film is an aluminum-lanthanum alloy film.
  • the aluminum-lanthanum-based alloy film means Al-La or Al-La-X including 90 atomic% or more of aluminum, 10 atomic% or less of La, and the remaining amount of other metal (X).
  • the other metal (X) is in the group consisting of Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt and C It is preferable that it is 1 type, or 2 or more types selected.
  • the titanium-based metal film means a titanium single film or a titanium alloy film.
  • An ITO / Al-La-Ni / Ti or ITO / Al-La-Ni / Mo triple layer was deposited on the glass, and a substrate in which a photoresist was patterned in a shape of a certain shape was used.
  • the etching liquid composition of Examples 1 to 8 and Comparative Examples 1 to 7 was placed in an experimental apparatus of a spray etching method (manufactured by SEMES, model name: ETCHER (TFT)), and the temperature was set to 30 ° C. and heated. Then, after the temperature reached 30 ⁇ 0.1 °C, the etching process was performed. Total etching time was performed at 30% based on EPD.
  • the etching solution compositions of Examples 1 to 8 exhibited excellent etching profiles and etching properties without lower layer damage and residues.
  • the etching profile was not good, and the titanium or molybdenum metal film as the lower film was not etched.
  • the etching profile was not good, and there was a bad result with the lower layer damage.
  • the etching solution composition of Comparative Example 5 there was no nitric acid and there was no damage to the lower layer, but the etching profile was poor and residue was generated.
  • the etching solution composition of Comparative Example 6 there was no damage to the lower layer or residue, but the etching profile was not very good due to overetching.
  • the damage of the lower layer was very large due to the excess of the fluorine-containing compound.

Abstract

The present invention relates to an etchant composition for etching a triple film constituted by an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, wherein the etchant composition comprises: 0.1 wt % to 10 wt % of a ferrous compound; 0.1 wt % to 10 wt % of nitric acid; 0.01 wt % to 5 wt % of a fluorine compound; with the remainder being water, and further comprises 0.1 wt % to 5 wt % of a phosphate compound.

Description

식각액 조성물Etch solution composition
본 발명은 반도체 장치 및 평판표시장치, 특히 TFT 또는 OLED 등의 게이트, 소스/드레인 어레이 배선용으로 이용되는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막을 식각할 수 있는 식각액 조성물에 관한 것이다.The present invention can etch a triple layer made of a semiconductor device and a flat panel display device, in particular an indium metal film, an aluminum metal film, and a titanium or molybdenum metal film used for a gate, a source / drain array wiring, such as a TFT or an OLED. It relates to an etchant composition that can be.
평판표시장치에서 기판 상에 금속 배선을 형성하는 과정은 통상적으로 스퍼터링에 의해 금속막을 형성하는 공정, 금속막 상에 포토레지스트를 도포하고 노광하고 현상하여 선택적인 영역에 포토레지스트를 형성하는 공정 및 금속막을 식각하는 공정으로 구성된다. 또한, 개별적인 단위 공정 전후의 세정공정 등을 포함한다. 이러한 식각공정은 포토레지스트를 마스크로 사용하여 선택적인 영역에 금속막을 남기는 공정을 의미한다. 식각공정으로는 통상적으로 플라즈마 등을 이용한 건식 식각, 또는 식각액을 이용하는 습식 식각이 사용된다.In the flat panel display, a process of forming a metal wiring on a substrate is typically a process of forming a metal film by sputtering, a process of forming a photoresist in a selective region by applying a photoresist on a metal film, exposing and developing the metal film, and a metal. It consists of a process of etching the film. Moreover, the washing | cleaning process, etc. before and after an individual unit process are included. This etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask. As an etching process, dry etching using a plasma or the like, or wet etching using an etching solution is generally used.
한편, 평판표시장치에서 화소전극으로 인듐계 금속막인 투명전도막이 주로 사용된다. 또한, 소스/드레인 전극으로는 알루미늄계 금속막, 예를 들어 Al-La-X (X= Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Mo, Pt, C에서 선택되는 금속) 형태의 알루미늄 란탄계 합금막이 주로 사용된다. 또한, 소스/드레인 전극 하부에는 소스/드레인 전극과 절연막의 접착을 위하여 완충막으로 티타늄 또는 몰리브덴을 포함하는 금속막이 주로 사용된다. In the flat panel display device, a transparent conductive film, which is an indium metal film, is mainly used as a pixel electrode. In addition, as the source / drain electrodes, an aluminum metal film such as Al-La-X (X = Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, An aluminum lanthanum-based alloy film in the form of Nd, Sn, Fe, Si, Mo, Pt, C) is mainly used. In addition, a metal film including titanium or molybdenum is mainly used as a buffer film under the source / drain electrode to bond the source / drain electrode to the insulating film.
이러한 평판표시장치의 화소전극, 소스/드레인 전극 및 완충막을 식각하기 위해서 종래에는 각 전극마다 다른 식각액 조성물을 사용해야만 했다. 예를 들어 대한민국 공개특허 제10-2006-0104926호에서는 인산, 질산, 수용성 유기산, 식각활성제, 식각조절제 및 물을 포함하는 식각액 조성물을 개시하고 있다. 하지만 상기 조성물은 알루미늄, 니켈, 첨가금속으로 구성된 단일막에는 효과가 있으나, 다중막에서는 식각특성이 발휘되지 않는다.In order to etch the pixel electrode, the source / drain electrode, and the buffer film of such a flat panel display device, a conventional etching solution composition has to be used for each electrode. For example, Korean Patent Publication No. 10-2006-0104926 discloses an etchant composition comprising phosphoric acid, nitric acid, a water-soluble organic acid, an etchant, an etchant, and water. However, the composition is effective in a single film composed of aluminum, nickel, additive metal, but the etching properties are not exhibited in the multi-layer.
따라서, 평판표시장치의 화소전극, 소스/드레인 전극 및 완충막을 일괄식각할 수 있는 새로운 식각액 조성물의 개발이 요구되고 있다.Accordingly, there is a need for the development of a new etchant composition capable of collectively etching pixel electrodes, source / drain electrodes, and buffer films of flat panel displays.
본 발명의 목적은 반도체 장치 및 평판표시장치에서 배선으로 사용되는 인듐을 포함하는 금속막, 알루미늄을 포함하는 금속막, 특히, 알루미늄 란타늄 니켈 합금막, 그리고 티타늄 또는 몰리브덴을 포함하는 금속막으로 이루어진 삼중막을 일괄 식각할 수 있는 식각액 조성물을 제공하는 것이다.An object of the present invention is a triple consisting of a metal film containing indium, a metal film containing aluminum, in particular, an aluminum lanthanum nickel alloy film, and a metal film containing titanium or molybdenum used as wiring in semiconductor devices and flat panel display devices. It is to provide an etching liquid composition capable of batch etching the membrane.
또한, 본 발명의 목적은 식각 공정을 간소화시키고 생산성을 향상시킬 수 있고 식각 특성이 우수한 식각액 조성물을 제공하는 것이다.It is also an object of the present invention to provide an etching liquid composition which can simplify the etching process and improve productivity and has excellent etching characteristics.
또한, 본 발명의 목적은 고가의 장비구성이 필요하지 않고 대면적화에 유리하여 매우 경제적인 식각액 조성물을 제공하는 것이다.It is also an object of the present invention to provide an etchant composition which is very economical because it does not require expensive equipment configuration and is advantageous for large area.
상기 목적을 달성하기 위하여, 본 발명은 조성물 총 중량에 대하여, 철 화합물 0.1 중량% 내지 10 중량%; 질산 0.1 중량% 내지 10 중량%; 함불소 화합물 0.01 중량% 내지 5 중량%; 및 잔량의 물을 포함하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물을 제공한다.In order to achieve the above object, the present invention is 0.1 to 10% by weight based on the total weight of the composition; 0.1 wt% to 10 wt% nitric acid; 0.01 wt% to 5 wt% of a fluorine-containing compound; And an indium metal film, an aluminum metal film, and a titanium or molybdenum metal film including a residual amount of water.
바람직하게는, 본 발명은 조성물 총 중량에 대하여, 철 화합물 1 중량% 내지 7 중량%; 질산 2 중량% 내지 7 중량%; 함불소 화합물 0.1 중량% 내지 2 중량%; 및 잔량의 물을 포함하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물을 제공한다.Preferably, the present invention comprises 1% to 7% by weight of the iron compound, based on the total weight of the composition; 2 wt% to 7 wt% nitric acid; 0.1 wt% to 2 wt% of a fluorine-containing compound; And an indium metal film, an aluminum metal film, and a titanium or molybdenum metal film including a residual amount of water.
또한, 본 발명은 상기 조성물에 인산염 화합물 0.1 중량% 내지 5 중량%를 추가로 포함하는 삼중막의 식각액 조성물을 제공한다. In addition, the present invention provides an etchant composition of the triple layer further comprises 0.1 wt% to 5 wt% of the phosphate compound in the composition.
본 발명의 식각액 조성물은 인듐을 포함하는 금속막, 알루미늄을 포함하는 금속막, 티타늄 또는 몰리브덴을 포함하는 금속막으로 이루어진 삼중막을 일괄 식각할 수 있어서 식각 공정을 간소화시키고 생산성을 향상시킨다. 또한, 본 발명의 식각액 조성물은 식각속도가 빠르고 하부막 및 장비에 대한 손상이 없고 균일한 에칭이 가능하여 식각 특성이 우수하다. 또한, 본 발명의 식각액 조성물은 고가의 장비구성이 필요하지 않고 대면적화에 유리하여 매우 경제적이다.The etchant composition of the present invention can batch-etch a triple film made of a metal film containing indium, a metal film containing aluminum, and a metal film containing titanium or molybdenum to simplify the etching process and improve productivity. In addition, the etchant composition of the present invention is excellent in etching characteristics because the etching rate is fast and there is no damage to the underlying film and equipment and uniform etching is possible. In addition, the etchant composition of the present invention does not require expensive equipment configuration and is very economical because it is advantageous for large area.
이하, 본 발명에 대해 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 식각액 조성물은 철 화합물, 질산, 함불소 화합물 및 물을 포함한다.The etchant composition of the present invention comprises an iron compound, nitric acid, a fluorine-containing compound and water.
본 발명에서 철 화합물은 알루미늄계 금속막과, 티타늄계 또는 몰리브덴계 금속막의 표면을 산화시키는 역할을 한다.In the present invention, the iron compound serves to oxidize the surface of the aluminum-based metal film and the titanium-based or molybdenum-based metal film.
상기 철 화합물은 조성물 총 중량에 대하여, 0.1 중량% 내지 10 중량%로 포함되는 것이 바람직하며, 1 중량% 내지 7 중량%로 포함되는 것이 더욱 바람직하다. 상술한 범위 미만으로 포함되면, 알루미늄을 포함하는 금속막의 식각 속도가 저하되고, 이로 인해 잔사가 발생하게 된다. 또한, 불균일한 식각 특성으로 인해 기판 내에 얼룩이 발생한다. 상술한 범위를 초과하면, 과도한 식각속도에 의해서 알루미늄을 포함하는 금속막과, 티타늄 또는 몰리브덴을 포함하는 금속막이 소실 될 수 있다.The iron compound is preferably included in an amount of 0.1 wt% to 10 wt%, more preferably 1 wt% to 7 wt%, based on the total weight of the composition. When included below the above range, the etching rate of the metal film containing aluminum is lowered, and thus residues are generated. In addition, uneven etching characteristics cause staining in the substrate. If the above range is exceeded, the metal film containing aluminum and the metal film containing titanium or molybdenum may be lost due to excessive etching speed.
상기 철 화합물은 특별히 제한되지 않으나, 예를 들면 FeCl3, Fe(NO3)3, Fe2(SO4)3, NH4Fe(SO4)2, Fe(ClO4)3, FePO4, Fe(NH4)3(C2O4)3 등을 들 수 있고, 이들을 각각 단독으로 또는 2종 이상 혼합하여 사용할 수 있다.The iron compound is not particularly limited, but for example FeCl 3 , Fe (NO 3 ) 3 , Fe 2 (SO 4 ) 3 , NH 4 Fe (SO 4 ) 2 , Fe (ClO 4 ) 3 , FePO 4 , Fe (NH 4) and the like 3 (C 2 O 4) 3 , may be used in each of these mixed alone, or two or more kinds.
본 발명에서 질산은 알루미늄계 금속막과, 티타늄계 또는 몰리브덴계 금속막의 표면을 산화시키는 역할을 한다.       In the present invention, the nitric acid serves to oxidize the surface of the aluminum-based metal film and the titanium or molybdenum-based metal film.
상기 질산은 조성물 총 중량에 대하여, 0.1 중량% 내지 10 중량%로 포함되는 것이 바람직하고, 2 중량% 내지 7 중량%로 포함되는 것이 더욱 바람직하다. 상술한 범위 미만으로 포함되면, 알루미늄계 금속막과, 티타늄계 또는 몰리브덴계 금속막의 식각 속도 저하가 발생한다. 또한, 기판 간의 식각 속도 차이를 유발하여 티타늄계 또는 몰리브덴계 금속막에 테일링(Tailing) 현상의 식각을 발생시킴으로써 얼룩이 생길 수 있다. 상술한 범위를 초과하면 PR 크랙 발생에 의한 약액 침투에 의해 알루미늄계 금속막과 티타늄계 또는 몰리브덴계 금속막이 단락되는 현상이 발생할 수 있다. 또한 과 식각에 의해 알루미늄계 금속막과 티타늄계 또는 몰리브덴계 금속막이 소실되거나 금속 배선으로서의 기능을 상실할 수도 있다.The nitric acid is preferably included in an amount of 0.1 wt% to 10 wt%, more preferably 2 wt% to 7 wt%, based on the total weight of the composition. When included below the above range, the etching rate decreases between the aluminum-based metal film and the titanium-based or molybdenum-based metal film. In addition, staining may occur by causing an etching rate difference between the substrates to cause etching of a tailing phenomenon in the titanium-based or molybdenum-based metal film. If the above-mentioned range is exceeded, a phenomenon in which the aluminum-based metal film and the titanium-based or molybdenum-based metal film may be short-circuited may occur due to the penetration of the chemical liquid due to PR crack generation. Also, due to overetching, the aluminum-based metal film and the titanium-based or molybdenum-based metal film may be lost or lose their function as metal wiring.
본 발명에서 함불소 화합물은, 산화된 인듐계 금속막과, 산화된 알루미늄계 금속막 및 하부의 티타늄계 또는 몰리브덴계 금속막을 식각하는 역할을 한다.In the present invention, the fluorine-containing compound serves to etch the oxidized indium metal film, the oxidized aluminum metal film, and the titanium or molybdenum metal film below.
상기 함불소 화합물은 조성물 총 중량에 대하여 0.01 중량% 내지 5 중량%로 포함되는 것이 바람직하고, 0.1 중량% 내지 2 중량%로 포함되는 것이 더욱 바람직하다. 상술한 범위 미만으로 포함되면, 알루미늄계 금속막이 낮은 식각속도를 가지게 되어 기판 내에서 불균일한 식각 특성으로 유발될 수 있다. 상술한 범위를 초과하여 포함되면, 알루미늄계 금속막이 과도한 식각속도에 의해서 소실이 될 수 있고, 하부막인 티타늄계 또는 몰리브덴계 금속막이 손상될 수 있다.The fluorine-containing compound is preferably included in an amount of 0.01 wt% to 5 wt%, more preferably 0.1 wt% to 2 wt%, based on the total weight of the composition. When included below the above range, the aluminum-based metal film may have a low etching rate and may be caused by non-uniform etching characteristics in the substrate. If it exceeds the above-mentioned range, the aluminum-based metal film may be lost due to excessive etching speed, and the titanium-based or molybdenum-based metal film, which is a lower film, may be damaged.
상기 함불소 화합물은 특별히 제한되는 것은 아니나 불소 이온 또는 다원자 불소이온으로 해리될 수 있는 화합물인 것이 바람직하다. 예를 들어, 상기 함불소 화합물로는 불화암모늄, 불화나트륨, 불화칼륨, 중불화암모늄, 중불화나트륨, 중불화칼륨 등을 사용할 수 있다. 이들은 각각 단독으로 또는 2종 이상 혼합하여 사용 가능하다.The fluorine-containing compound is not particularly limited but is preferably a compound capable of dissociating into fluorine ions or polyatomic fluorine ions. For example, ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride, potassium bifluoride, or the like may be used as the fluorine-containing compound. These can be used individually or in mixture of 2 or more types, respectively.
본 발명에서, 물은 탈이온수를 의미한다. 상기 물로는 반도체 공정용을 사용하며, 바람직하게는 18㏁/㎝ 이상의 물을 사용한다. 상기 물은 조성물 총 중량에 대하여 본 발명의 식각액 조성물의 총 중량이 100중량%가 되도록 잔량 포함된다.In the present invention, water means deionized water. The water is used for the semiconductor process, preferably water of 18 dl / cm or more. The water is included in the balance so that the total weight of the etchant composition of the present invention to 100% by weight relative to the total weight of the composition.
또한 본 발명의 식각액 조성물은 상기 필수 성분들 외에 인산염 화합물을 추가로 포함할 수 있다. 본 발명의 조성물이 인산염 화합물을 포함하는 경우에는, 하부막이 몰리브덴계 금속막인 삼중막의 일괄식각에 보다 적합하다.In addition, the etchant composition of the present invention may further include a phosphate compound in addition to the essential components. When the composition of this invention contains a phosphate compound, it is more suitable for the batch etching of the triple film whose lower film is a molybdenum type metal film.
본 발명에서 인산염 화합물은 테이퍼 프로파일을 양호하게 하고, 알루미늄계 금속막 및 몰리브덴계 금속막의 식각 속도를 조절하는 역할을 한다.In the present invention, the phosphate compound serves to improve the taper profile and to control the etching rate of the aluminum-based metal film and the molybdenum-based metal film.
상기 인산염 화합물은 조성물 총 중량에 대하여 0.1 중량% 내지 5 중량%로 포함되는 것이 바람직하고, 0.1 중량% 내지 2 중량%로 포함되는 것이 더욱 바람직하다. 상술한 범위를 만족하면, 알루미늄계 금속막 및 몰리브덴계 금속막의 식각속도를 조절하기 용이하고, 균일한 식각 특성을 구현할 수 있다.The phosphate compound may be included in an amount of 0.1 wt% to 5 wt%, more preferably 0.1 wt% to 2 wt%, based on the total weight of the composition. When the above-described range is satisfied, the etching rate of the aluminum-based metal film and the molybdenum-based metal film can be easily adjusted, and uniform etching characteristics can be realized.
상기 인산염 화합물은 인산에서 수소가 알칼리 금속 또는 알칼리 토금속으로 한 개 내지 세 개가 치환된 염으로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하나, 이에 제한되는 것은 아니다. 구체적으로, 상기 인산염 화합물로는 인산이수소나트륨(sodium dihydrogen phosphate), 인산이수소칼륨(potassium dihydrogen phosphate) 및 이들의 혼합물로 이루어진 군에서 선택될 수 있다.The phosphate compound is preferably one or two or more selected from the group consisting of salts in which one to three hydrogens are substituted with an alkali metal or an alkaline earth metal in phosphoric acid, but is not limited thereto. Specifically, the phosphate compound may be selected from the group consisting of sodium dihydrogen phosphate, potassium dihydrogen phosphate, and mixtures thereof.
또한 본 발명의 식각액 조성물은 상기에 언급된 성분들 외에 식각조절제, 계면활성제, 금속 이온 봉쇄제, 부식 방지제 등의 기타 첨가제를 1종 또는 2종 이상 함유할 수 있다.In addition, the etchant composition of the present invention may contain one or two or more other additives such as an etch control agent, a surfactant, a metal ion sequestrant, and a corrosion inhibitor in addition to the above-mentioned components.
한편 본 발명에서 인듐계 금속막은 투명전도막으로서, 예를 들면 인듐아연산화막(IZO), 인듐주석산화막(ITO) 등을 들 수 있다. In the present invention, the indium-based metal film may be, for example, an indium zinc oxide film (IZO), an indium tin oxide film (ITO), or the like as the transparent conductive film.
또한, 알루미늄계 금속막은 알루미늄 단일막 또는 알루미늄을 주성분으로 하는 알루미늄 합금막을 의미한다. 상기 알루미늄 합금막은 알루미늄-란타늄 합금막인 것이 바람직하다. 여기서, 알루미늄-란타늄계 합금막은 알루미늄 90원자% 이상, La 10원자% 이하 및 다른 금속(X) 잔량을 포함하는 Al-La 또는 Al-La-X를 의미한다. 상기 다른 금속(X)은 Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt 및 C로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다.In addition, an aluminum type metal film means the aluminum single film or the aluminum alloy film which has aluminum as a main component. It is preferable that the aluminum alloy film is an aluminum-lanthanum alloy film. Here, the aluminum-lanthanum-based alloy film means Al-La or Al-La-X including 90 atomic% or more of aluminum, 10 atomic% or less of La, and the remaining amount of other metal (X). The other metal (X) is in the group consisting of Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt and C It is preferable that it is 1 type, or 2 or more types selected.
또한, 상기 티타늄계 금속막은 티타늄 단일막 또는 티타늄 합금막인 것을 의미한다.In addition, the titanium-based metal film means a titanium single film or a titanium alloy film.
이하, 실시예 및 시험예를 통하여 본 발명을 더욱 상세하게 설명한다. 그러나, 본 발명의 범위가 하기의 실시예 및 시험예에 의하여 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples and Test Examples. However, the scope of the present invention is not limited by the following examples and test examples.
실시예 1 내지 실시예 8, 비교예 1 내지 비교예 7: 식각액 조성물의 제조Examples 1 to 8, Comparative Examples 1 to 7: Preparation of the etchant composition
하기 표 1에 기재된 성분 및 조성비에 따라 식각액 조성물이 180kg이 되도록 제조하였다.To the etchant composition according to the component and composition ratio shown in Table 1 to 180kg was prepared.
표 1
Figure PCTKR2010006956-appb-T000001
 Table 1
Figure PCTKR2010006956-appb-T000001
시험예: 식각액 조성물의 특성 평가Test Example: Evaluation of Properties of Etch Liquid Composition
<식각특성평가><Etch Characteristic Evaluation>
글래스 위에 ITO/Al-La-Ni/Ti 또는 ITO/Al-La-Ni/Mo 삼중막이 증착되어 있고, 일정한 형태의 모양으로 포토레지스트가 패터닝된 기판을 사용하였다. 분사식 식각 방식의 실험장비 (SEMES사 제조, 모델명: ETCHER(TFT)) 내에 상기 실시예 1 내지 실시예 8, 비교예 1 내지 비교예 7의 식각액 조성물을 넣고 온도를 30℃로 세팅하여 가온하였다. 그 후, 온도가 30±0.1℃에 도달한 후, 식각 공정을 수행하였다. 총 식각시간을 EPD를 기준으로 하여 30%를 주어 실시하였다. 시편을 넣고 분사를 시작하여 식각이 다 되면 꺼내어 탈이온수로 세정한 후, 열풍(熱風) 건조장치를 이용하여 건조하고, 포토레지스트(PR) 박리기(stripper)를 이용하여 포토레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경(SEM; HITACHI사 제조, 모델명: S-4700)을 이용하여 식각 프로파일의 경사각, 사이드 에치(CD(critical dimension) 손실, 식각 잔류물 및 하부막 손상을 평가하였다. 그 결과를 표 2에 나타내었다.An ITO / Al-La-Ni / Ti or ITO / Al-La-Ni / Mo triple layer was deposited on the glass, and a substrate in which a photoresist was patterned in a shape of a certain shape was used. The etching liquid composition of Examples 1 to 8 and Comparative Examples 1 to 7 was placed in an experimental apparatus of a spray etching method (manufactured by SEMES, model name: ETCHER (TFT)), and the temperature was set to 30 ° C. and heated. Then, after the temperature reached 30 ± 0.1 ℃, the etching process was performed. Total etching time was performed at 30% based on EPD. Insert the specimen, start spraying, and when the etching is complete, taken out, washed with deionized water, dried using a hot air drying apparatus, and removed the photoresist using a photoresist stripper (PR) stripper. After cleaning and drying, an electron scanning microscope (SEM; manufactured by HITACHI, model name: S-4700) was used to evaluate the inclination angle, loss of side etch (CD), etching residue and underlying film damage of the etching profile. The results are shown in Table 2.
표 2
Figure PCTKR2010006956-appb-T000002
 TABLE 2
Figure PCTKR2010006956-appb-T000002
[식각 프로파일의 평가 기준][Evaluation Criteria of Etch Profile]
◎: 매우 우수(CD Skew: ≤1㎛, Taper Angle: 40°~ 80°)◎: Very good (CD Skew: ≤1㎛, Taper Angle: 40 ° ~ 80 °)
○: 우수(CD Skew: ≤1.5㎛, Taper Angle: 40°~ 80°)○: Excellent (CD Skew: ≤1.5㎛, Taper Angle: 40 ° ~ 80 °)
△: 양호(CD Skew: ≤2㎛, Taper Angle: 40°~ 80°)△: Good (CD Skew: ≤2㎛, Taper Angle: 40 ° to 80 °)
×: 불량 (금속막 소실 및 잔사)×: defective (metal film loss and residue)
표 2를 참조하면, 실시예 1 내지 실시예 8의 식각액 조성물은 식각 프로파일이 우수하며 하부막 손상 및 잔사가 없는 식각 특성을 나타내었다. Referring to Table 2, the etching solution compositions of Examples 1 to 8 exhibited excellent etching profiles and etching properties without lower layer damage and residues.
그러나, 비교예 1 및 비교예 3의 식각액 조성물의 경우, 식각 프로파일이 좋지 않고, 하부막인 티타늄계 또는 몰리브덴계 금속막이 식각되지 않는 결과를 얻었다. 또한 비교예 2 및 비교예 4의 식각액 조성물의 경우에는 식각 프로파일이 좋지 않고, 하부막 손상이 있는 좋지 않은 결과를 얻었다. 비교예 5의 식각액 조성물의 경우, 질산이 없어 하부막 손상은 없었으나 식각 프로파일이 좋지 않고 잔사가 발생되었다. 비교예 6의 식각액 조성물의 경우에는 하부막 손상이나 잔사는 없었으나, 과식각에 의해 식각 프로파일이 매우 좋지 않았다. 또한 비교예 7의 식각액 조성물의 경우에는, 과량의 함불소 화합물에 의하여 하부막 손상이 매우 크게 나타났다. However, in the etching liquid compositions of Comparative Example 1 and Comparative Example 3, the etching profile was not good, and the titanium or molybdenum metal film as the lower film was not etched. In addition, in the case of the etching solution compositions of Comparative Example 2 and Comparative Example 4, the etching profile was not good, and there was a bad result with the lower layer damage. In the etching solution composition of Comparative Example 5, there was no nitric acid and there was no damage to the lower layer, but the etching profile was poor and residue was generated. In the etching solution composition of Comparative Example 6, there was no damage to the lower layer or residue, but the etching profile was not very good due to overetching. In addition, in the case of the etching solution composition of Comparative Example 7, the damage of the lower layer was very large due to the excess of the fluorine-containing compound.

Claims (7)

  1. 조성물 총 중량에 대하여, Regarding the total weight of the composition,
    철 화합물 0.1 중량% 내지 10 중량%; 0.1 wt% to 10 wt% iron compound;
    질산 0.1 중량% 내지 10 중량%; 0.1 wt% to 10 wt% nitric acid;
    함불소 화합물 0.01 중량% 내지 5 중량%; 및 0.01 wt% to 5 wt% of a fluorine-containing compound; And
    물 잔량을 포함하는 것을 특징으로 하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물.An etchant composition of a triple layer comprising an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, including a residual amount of water.
  2. 청구항 1에 있어서, The method according to claim 1,
    조성물 총 중량에 대하여, Regarding the total weight of the composition,
    철 화합물 1 중량% 내지 7 중량%; 1 wt% to 7 wt% iron compound;
    질산 2 중량% 내지 7 중량%; 2 wt% to 7 wt% nitric acid;
    함불소 화합물 0.1 중량% 내지 2 중량%; 및 0.1 wt% to 2 wt% of a fluorine-containing compound; And
    잔량의 물을 포함하는 것을 특징으로 하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물.An etchant composition of a triple layer comprising an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, comprising a residual amount of water.
  3. 청구항 1에 있어서, The method according to claim 1,
    상기 철 화합물은 FeCl3, Fe(NO3)3, Fe2(SO4)3, NH4Fe(SO4)2, Fe(ClO4)3, FePO4및 Fe(NH4)3(C2O4)3으로 이루어진 군으로부터 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물.The iron compound is FeCl 3 , Fe (NO 3 ) 3 , Fe 2 (SO 4 ) 3 , NH 4 Fe (SO 4 ) 2 , Fe (ClO 4 ) 3 , FePO 4 and Fe (NH 4 ) 3 (C 2 An etchant composition of an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, characterized in that at least one selected from the group consisting of O 4 ) 3 .
  4. 청구항 1에 있어서,The method according to claim 1,
    상기 함불소 화합물은 불화암모늄, 불화나트륨, 불화칼륨, 중불화암모늄, 중불화나트륨 및 중불화칼륨으로 이루어진 군으로부터 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물.The fluorine-containing compound is at least one selected from the group consisting of ammonium fluoride, sodium fluoride, potassium fluoride, ammonium bifluoride, sodium bifluoride and potassium bifluoride, indium-based metal film, aluminum-based metal film And an etching liquid composition of a triple layer made of a titanium-based or molybdenum-based metal film.
  5. 청구항 1에 있어서, The method according to claim 1,
    상기 식각액 조성물은 인산염 화합물 0.1 중량% 내지 5 중량%를 추가로 더 포함하는 것을 특징으로 하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물.The etchant composition further comprises 0.1 wt% to 5 wt% of a phosphate compound, the etchant composition of the triple layer consisting of an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film.
  6. 청구항 5에 있어서,The method according to claim 5,
    상기 인산염 화합물은 인산이수소나트륨, 인산이수소칼륨 및 이들의 혼합물로 이루어진 군에서 선택되는 1종인 것을 특징으로 하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물.The phosphate compound is a triple layer consisting of an indium metal film, an aluminum metal film, and a titanium or molybdenum metal film, characterized in that one selected from the group consisting of sodium dihydrogen phosphate, potassium dihydrogen phosphate, and mixtures thereof. Etch solution composition of the membrane.
  7. 청구항 1에 있어서,The method according to claim 1,
    상기 알루미늄계 금속막은, 알루미늄 90원자% 이상, La 10원자% 이하 및 다른 금속 X 잔량을 포함하는 Al-La 또는 Al-La-X로 표시되는 알루미늄-란타늄계 합금막이고, 여기에서 상기 다른 금속 X는 Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt 및 C로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것을 특징으로 하는 인듐계 금속막, 알루미늄계 금속막, 및 티타늄계 또는 몰리브덴계 금속막으로 이루어진 삼중막의 식각액 조성물.The aluminum-based metal film is an aluminum-lanthanum-based alloy film represented by Al-La or Al-La-X including 90 atomic% or more of aluminum, 10 atomic% or less of La, and other metal X balances, wherein the other metal X is one selected from the group consisting of Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti, Pt and C or An etchant composition of a triple layer comprising an indium-based metal film, an aluminum-based metal film, and a titanium-based or molybdenum-based metal film, which is at least two kinds.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050034952A (en) * 2003-10-10 2005-04-15 엘지.필립스 엘시디 주식회사 Etchant for forming metal line and fabrication method for metal line using the same
KR20070060864A (en) * 2005-12-09 2007-06-13 동우 화인켐 주식회사 Etchant for metal layer
KR20080045403A (en) * 2006-11-20 2008-05-23 동우 화인켐 주식회사 Etching solution composition and method of etching using the etching solution composition
KR20080045854A (en) * 2006-11-21 2008-05-26 동우 화인켐 주식회사 Method of producing tft array substrate for liquid crystal display
KR20080109373A (en) * 2007-06-13 2008-12-17 동우 화인켐 주식회사 Method for fabricating array substrate for a liquidcrystal display device

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Publication number Priority date Publication date Assignee Title
KR20050034952A (en) * 2003-10-10 2005-04-15 엘지.필립스 엘시디 주식회사 Etchant for forming metal line and fabrication method for metal line using the same
KR20070060864A (en) * 2005-12-09 2007-06-13 동우 화인켐 주식회사 Etchant for metal layer
KR20080045403A (en) * 2006-11-20 2008-05-23 동우 화인켐 주식회사 Etching solution composition and method of etching using the etching solution composition
KR20080045854A (en) * 2006-11-21 2008-05-26 동우 화인켐 주식회사 Method of producing tft array substrate for liquid crystal display
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