CN1947273A - 在本征半导体和欧姆接触之间具有p掺杂半导体的有机肖特基二极管 - Google Patents

在本征半导体和欧姆接触之间具有p掺杂半导体的有机肖特基二极管 Download PDF

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Publication number
CN1947273A
CN1947273A CNA2005800130663A CN200580013066A CN1947273A CN 1947273 A CN1947273 A CN 1947273A CN A2005800130663 A CNA2005800130663 A CN A2005800130663A CN 200580013066 A CN200580013066 A CN 200580013066A CN 1947273 A CN1947273 A CN 1947273A
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CN
China
Prior art keywords
organic semiconductor
schottky diode
semiconductor layer
ohmic contact
resilient coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800130663A
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English (en)
Chinese (zh)
Inventor
李子成
迈克尔·A·哈斯
保罗·F·博德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
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3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN1947273A publication Critical patent/CN1947273A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
CNA2005800130663A 2004-03-25 2005-03-10 在本征半导体和欧姆接触之间具有p掺杂半导体的有机肖特基二极管 Pending CN1947273A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/809,135 2004-03-25
US10/809,135 US7193291B2 (en) 2004-03-25 2004-03-25 Organic Schottky diode

Publications (1)

Publication Number Publication Date
CN1947273A true CN1947273A (zh) 2007-04-11

Family

ID=34961962

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800130663A Pending CN1947273A (zh) 2004-03-25 2005-03-10 在本征半导体和欧姆接触之间具有p掺杂半导体的有机肖特基二极管

Country Status (5)

Country Link
US (1) US7193291B2 (enExample)
EP (1) EP1738422A1 (enExample)
JP (1) JP2007531272A (enExample)
CN (1) CN1947273A (enExample)
WO (1) WO2005104262A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101930976A (zh) * 2009-06-19 2010-12-29 三洋电机株式会社 半导体装置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100721656B1 (ko) 2005-11-01 2007-05-23 주식회사 엘지화학 유기 전기 소자
US8680693B2 (en) 2006-01-18 2014-03-25 Lg Chem. Ltd. OLED having stacked organic light-emitting units
WO2007095061A2 (en) * 2006-02-09 2007-08-23 Qd Vision, Inc. Device including semiconductor nanocrystals and a layer including a doped organic material and methods
US7608679B2 (en) * 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US20080171422A1 (en) * 2007-01-11 2008-07-17 Tokie Jeffrey H Apparatus and methods for fabrication of thin film electronic devices and circuits
US8330149B2 (en) * 2007-09-28 2012-12-11 The Johns Hopkins University Megahertz organic/polymer diodes
JP4733235B2 (ja) * 2009-04-24 2011-07-27 パナソニック株式会社 有機ｅｌディスプレイおよびその製造方法
JP5477841B2 (ja) * 2009-05-11 2014-04-23 健一 中山 トランジスタ素子
KR101087702B1 (ko) 2010-02-24 2011-11-30 한국과학기술원 유기 다이오드
US9508840B2 (en) * 2010-11-23 2016-11-29 Acreo Swedich Ict Ab Diode, use thereof, and a method for producing the same
US20150349281A1 (en) 2014-06-03 2015-12-03 Palo Alto Research Center Incorporated Organic schottky diodes
CN105428545B (zh) * 2015-12-24 2017-09-22 天津理工大学 一种低压及高色稳定性的白光有机发光二极管
JP2021097147A (ja) * 2019-12-18 2021-06-24 東洋インキＳｃホールディングス株式会社 熱電変換材料、その処理方法および熱電変換素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000017911A1 (en) 1998-09-24 2000-03-30 Fed Corporation Active matrix organic light emitting diode with doped organic layer having increased thickness
JP2000196140A (ja) 1998-12-28 2000-07-14 Sharp Corp 有機エレクトロルミネッセンス素子とその製造法
US6114088A (en) 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
KR20040044998A (ko) 2001-09-27 2004-05-31 쓰리엠 이노베이티브 프로퍼티즈 컴파니 치환 펜타센 반도체

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101930976A (zh) * 2009-06-19 2010-12-29 三洋电机株式会社 半导体装置

Also Published As

Publication number Publication date
EP1738422A1 (en) 2007-01-03
WO2005104262A1 (en) 2005-11-03
US20050212072A1 (en) 2005-09-29
JP2007531272A (ja) 2007-11-01
US7193291B2 (en) 2007-03-20

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Open date: 20070411