CN1941362B - 具有过电流保护装置的功率半导体模块 - Google Patents

具有过电流保护装置的功率半导体模块 Download PDF

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CN1941362B
CN1941362B CN2006101395672A CN200610139567A CN1941362B CN 1941362 B CN1941362 B CN 1941362B CN 2006101395672 A CN2006101395672 A CN 2006101395672A CN 200610139567 A CN200610139567 A CN 200610139567A CN 1941362 B CN1941362 B CN 1941362B
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power semiconductor
semiconductor module
connection element
module according
section
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CN1941362A (zh
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克里斯蒂安·克罗内德尔
乌维·肖依尔曼
德杨·施伦尔博
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Abstract

本发明涉及一种具有至少一个安全装置的大功率半导体模块。大功率半导体模块包括外壳、向外引出的负载接线元件、设置在外壳内的基底，基底具有多个相互电绝缘且不同极性的金属连接通道。在至少一个连接通道上设置至少一个大功率半导体组件，并与具有第一导线截面的第一连接元件连线正确地连接。安全装置由具有比第一导线截面小的第二导线截面的第二连接元件组成，第二连接元件设置在两个连接通道之间和/或连接通道和负载接线元件之间，其中第二连接元件的一个部分被防爆剂包裹。

Description

具有过电流保护装置的功率半导体模块
技术领域
本发明描述了一种包括外壳和至少一个设置于其中的电绝缘基底的大功率半导体模块(Leistungshalbleitermodul)，其中外壳优选具有用于安装到散热器上的底板。该电绝缘基底在它一侧包括绝缘材料体——该绝缘材料体具有多个设置在其上相互绝缘的金属连接通道(Verbindungsbahn)——和位于绝缘材料体上并与该连接通道符合电路地连接的大功率半导体组件(Leistungshalbleiterbauelement)。此外，大功率半导体模块还具有用于外部的负载和辅助接点的接线元件以及用于大功率半导体模块内部连接的连接元件。
背景技术
作为本发明出发点的大功率半导体模块例如由DE 103 16 355 B3公开。该文献公开了一种半桥电路设置形式的大功率半导体模块，具有第一功率开关和第二功率开关。每个功率开关被构造为分别具有相应自振荡二极管的多个大功率晶体管的并联电路。其中，具有相应大功率二极管的第一和第二大功率晶体管都设置在自己的基底上。
按照作为现有技术提到的文献，这种大功率半导体模块的基底被构造为由作为载体材料的绝缘材料体组成、并用于与底板或散热器绝缘的绝缘基底。根据现有技术，该绝缘材料体由工业陶瓷制成，例如氧化铝或氮化铝。在该绝缘材料体上，在其朝向大功率半导体模块内部的第一主平面上设置有多个相互电绝缘的金属连接通道。在这些连接通道上又设置大功率半导体组件。
绝缘材料体大多在其背向大功率半导体模块内部的第二主平面上同样具有与第一主平面上的连接通道相同材料和相同厚度的金属层。但是，通常该金属层没有被结构化，因为它例如用于与底板的焊接。连接通道和第二主平面的金属层优选由按照DCB(直接铜焊接)方法涂敷的铜制成，其中铜具有小于1mm的典型厚度。
此外，按照现有技术的所述大功率半导体模块还具有用于两个直流电接头和用于至少一个交流电接头的负载接线元件。负载接线元件将外部触点接通与基底上相应的连接通道连接起来。
为了实现内部绝缘，对按照现有技术的大功率半导体模块、直至连接元件之上浇注具有大介电常数的填料。
随着技术进步，现代大功率半导体组件、尤其是大功率晶体管具有越来越大的电流密度.大功率半导体组件和连接通道之间的典型连接元件是压焊连接(Bondverbindung)，在此特别是引线连接(Drahtbondverbindung).根据现有技术，在采用大功率半导体模块时，不同故障情况由大功率半导体模块内或大功率半导体模块的布线中的合适传感器确定，并由电子控制设备引入对抗措施，如断开功率开关.但还存在由此无法确定或无法完全确定的故障情况.在这样的情况下，在大功率半导体模块内部形成短暂流过的过电流，该过电流使压焊丝(Bonddraht)过载.该过电流导致至少一个压焊丝熔断，其中由于存在的电感，该电流以电弧形式保持.在具有填料的大功率半导体模块中，这由于该填料在很短时间内缺乏可压缩性并由于因此迅速产生的内压而经常导致大功率半导体模块的爆炸.
发明内容
本发明要解决的技术问题是提供一种大功率半导体模块，其具有设置在该大功率半导体模块内的保护装置，以防止由于电流过高而引起的大功率半导体模块的爆炸性破坏。
下面将防止大功率半导体模块内部电流过高的保护装置简称为安全装置。
按照本发明，该技术问题是通过权利要求1的特征的措施解决的。优选实施方式在从属权利要求中描述。
本发明的思想起始于优选具有用于安装在散热器上的底板的大功率半导体模块。该大功率半导体模块至少具有以下部件：外壳、用于负载和辅助接头的接线元件、至少一个具有连接通道的基底和至少一个大功率半导体组件。
用于负载接头的接线元件从外壳引出，并用于电连接设置在外壳内部的大功率半导体组件。与底板或散热器电绝缘的基底本身包括绝缘材料体、优选是工业陶瓷，和在绝缘材料体上位于其背向底板或散热器的第一主平面上的多个相互电绝缘的金属连接通道。大功率半导体组件设置在该连接通道上，并借助第一连接元件与第一导线截面符合电路地连接。优选地，该第一连接元件被构造为具有多个单压焊丝的压焊连接。这样的压焊连接具有第一导线截面，其由压焊连接的所有压焊丝的横截面之和构成。
大功率半导体模块在其内部具有至少一个安全装置，其中该安全装置由具有比第一导线截面小的第二导线截面的第二连接元件组成。安全装置设置在两个连接通道之间和/或连接通道和负载接线元件之间。此外，该第二连接元件在一个部分中完全被防爆剂(Explosionschutzmittel)包裹。该防爆剂使得可以控制地形成电弧，而在该防爆剂中不造成会导致爆炸的压力迅速提升。
附图说明
下面借助图1至图3进一步解释本发明的方案。
图1示出按照现有技术的大功率半导体模块的电路拓扑结构。
图2示出按照本发明的大功率半导体模块的电路拓扑结构。
图3示出按照本发明的大功率半导体模块的结构。
具体实施方式
图1示出按照现有技术的大功率半导体模块1的电路拓扑结构。在此示出半桥电路，这是许多功率电子电路拓扑结构的基础元件。在此，上面的第一功率开关70与下面的第二功率开关72串联。第一功率开关70与直流中间电路的正接头42连接。第二功率开关72与直流中间电路的负接头46连接。电路的中间引出头(Mittelabgriff)形成半桥电路的交流电输出端44。
功率开关70、72被构造为包括至少一个大功率晶体管70a、72a和至少一个与其反向并联连接的大功率二极管70b、72b的结构。
图2示出按照本发明的大功率半导体模块1的电路拓扑结构。这种电流拓扑结构同样是半桥电路。本发明的思想同样可以应用于其它任何电路拓扑结构中。按照本发明，基于该电路扩展大功率半导体模块1，其方法是将至少一个、在此是3个安全装置6a/6b/6c连接到电路中。
在此，一个优选实施方式是安全装置6b设置在中间引出头和交流电接头44之间。
另一有利实施方式在每个直流电接头42、46和对应的功率开关70、72之间分别设置一个安全装置6a、6c。
大功率半导体模块内部具有3个安全装置6a/6b/6c的结构是本发明的成本最高、但同时最安全的实施方式。只有一个安全装置6a/6b/6c的结构不能防止所有可能的故障情况，但是在成本和使用之间形成一个合理的折衷。
图3示出本发明的大功率半导体模块1。该大功率半导体模块具有底板2，底板上设置有外壳3和基底5。基底5包括绝缘材料体54以及金属涂覆层，这些金属涂覆层设置在两个主平面上。面向底板2的金属涂覆层53被平面地构造，并且未被结构化。借助该涂覆层53和底板2之间的焊接将这两者相互固定。与此相反，朝向大功率半导体模块内部的涂覆层被结构化，并因此形成基底5的连接通道52。
在此示为正极性直流电接头42和交流电接头44的接线元件通过金属模体(Metallformkoerper)形成，该接线元件在其一端以焊接技术与相应的连接通道52连接，而在另一端具有用于螺旋连接的孔(Ausnehmung)。
在该连接通道52上设置大功率半导体组件70、72，在此示为大功率二极管70b。电接线元件形成功率接头42、44和未明确示出的辅助接头。大功率半导体组件70、72——在此按照图2具有连接通道52的电路拓扑结构是大功率二极管70b——的符合电路的连接被构造为压焊连接40。例如，该压焊连接具有10个直径分别为300μm的单压焊丝，由此得到0.71mm2的与该大功率半导体组件的连接的第一导线截面。
此外还示出按照本发明的大功率半导体模块1的安全装置6的两个实施方式。第一实施方式具有正接头的印刷导线52和大功率二极管70b的设置于其阴极侧的印刷导线52之间的压焊连接60。该压焊连接60借助于5个直径分别为300μm的压焊丝构成。由此产生大小为第一截面50％的第二导线截面。特别有利的是，该第二导线截面的大小是第一导线截面的40％到60％。这个明显更小的第二导线截面是足够的，因为在短暂电流、即所谓的脉冲电流下只有导线截面是确定量。与此相比，与大功率半导体组件的压焊连接的构造通过其他参数、例如大功率半导体组件上的电流分配来确定。因此，这些连接通常被构造为具有明显比承受脉冲电流所需要的更大的导线截面。
形成该第二连接元件60的压焊丝除了其与相应印刷导线52的接触面之外被作为防爆剂的氧化硅62包裹。该氧化硅62优选具有50μm到2mm的粒度。在此，氧化硅作为纯净物62a或作为混和物62b存在，其中混和物中氧化硅的最小浓度是90％。
特别有利的是，向氧化硅62b添加粘合剂。由此，不是一定要求覆盖氧化硅62b，因为其在粘合形式下包围压焊丝60，并因此其位置在大功率半导体模块1中是固定的。
具有防爆剂62的压焊丝60被框架形式的结构32包围，该结构在此被构造为外壳部件并借助粘接而被设置在基底5上。因此，防止了防爆剂62和填料、优选为硅橡胶80之间的接触。此外，外壳3在其表面具有用于用防爆剂62填充大功率半导体模块的孔30。
所示的第二实施方式示出通过粘接技术与基底5连接的框架形式的限制装置64，优选由塑料制成。在该限制装置64内部设置压焊连接和防爆剂60。如果该压焊连接不具有粘合剂添加物，则在此设置闭锁装置66、例如环氧树脂，以便将防爆剂固定在预定位置上。

Claims (9)

1.一种具有至少一个安全装置(6)的大功率半导体模块(1)，其中所述大功率半导体模块至少包括外壳(3)、向外引出的负载接线元件(42，44，46)、至少一个设置在所述外壳(3)内的电绝缘基底(5)，其中所述基底包括绝缘材料体(54)和位于朝向所述大功率半导体模块内部的第一主平面上的多个相互电绝缘且不同极性的金属连接通道(52)，所述大功率半导体模块具有至少一个设置在所述连接通道(52)中一个上的、具有第一连接元件(40)的大功率半导体组件(70，72)，所述第一连接元件具有到其符合电路的连接的第一导线截面，
其中所述安全装置(6)由具有比所述第一导线截面小的第二导线截面的第二连接元件(60)组成，其中所述第二连接元件设置在两个连接通道(52)之间和/或设置在连接通道(52)和负载接线元件(42，44，46)之间，其中所述第二连接元件(60)在一个部分中被防爆剂(62)包裹；
其中所述第二连接元件(60)和所述安全装置的防爆剂(62)被框架形式的外壳部件(32)或被框架形式的限制装置(64)包围。
2.根据权利要求1所述的大功率半导体模块(1)，其中所述第一连接元件(40)和/或所述第二连接元件(60)分别被构造为具有多个同类型的单压焊丝的压焊连接。
3.根据权利要求1所述的大功率半导体模块(1)，其中所述安全装置(6)的框架形式的外壳部件(32)或框架形式的限制装置(64)在背向所述基底(5)的一侧上在所述防爆剂(62)之上具有闭锁装置(66)。
4.根据权利要求1所述的大功率半导体模块(1)，其中所述安全装置(6)的框架形式的外壳部件(32)或框架形式的限制装置(64)借助于粘接连接与所述基底(5)连接。
5.根据权利要求1所述的大功率半导体模块(1)，其中所述外壳(3)在所述框架形式的外壳部件(32)的区域内具有孔(30)。
6.根据权利要求1所述的大功率半导体模块(1)，其中所述防爆剂(62)包含超过90％的、粒度在50μm到2mm之间的氧化硅。
7.根据权利要求6所述的大功率半导体模块(1)，其中向所述防爆剂(62)添加粘合剂。
8.根据权利要求1所述的大功率半导体模块(1)，其中所述第二连接元件(60)的第二导线截面是所述第一连接元件(40)的第一导线截面的40％到60％。
9.根据权利要求1所述的大功率半导体模块(1)，其中所述大功率半导体模块(1)构成半桥电路，并且所述安全装置(6a/6b/6c)被设置在至少一个负载接线元件(42，44，46)和大功率半导体组件(70，72)之间。
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