CN1938938B - 温度补偿的压控振荡器 - Google Patents
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
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- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
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- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
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Abstract
使用反偏压二极管来获得一种具有温度补偿的VCO。所述VCO包括一可提供所需信号增益的放大器、一可提供所需相移的谐振器振谐电路、及至少一个用于对振荡器信号频率进行调谐的频率调谐电路。每一频率调谐电路包括至少一个调谐电容器及至少一个MOS传送晶体管,所述MOS传送晶体管用于将所述调谐电容器连接至所述谐振器振谐电路或断开所述调谐电容器与所述谐振器振谐电路的连接。每一反偏压二极管可为一寄生二极管,其形成于一MOS晶体管的一漏极或源极结处。所述反偏压二极管的电容可由一反偏压来控制以补偿所述VCO振荡频率随温度的漂移。
Description
技术领域
本发明大体而言涉及电路,且更具体而言涉及一种带温度补偿的压控振荡器(VCO)。
背景技术
VCO为许多电子电路中不可分割的一部分,且在通信电路中尤其重要。例如,VCO通常用于产生本地振荡器(LO)信号,供发射机和接收机子系统分别用于进行上变频及下变频。VCO也可用于产生用于同步电路(例如,正反器)的时钟信号。无线通信系统中的无线装置(例如,蜂窝电话)可使用多个VCO来产生用于发射机和接收机电路的LO信号及用于数字电路的时钟信号。
VCO通常采用一个或多个可变电容器以便能够调节所述VCO的振荡频率。VCO的调谐范围是指通过改变所述可变电容器所获得的振荡频率范围。此调谐范围用于:(1)确保所述VCO能够以需要频率或频率范围工作;及(2)补偿因组件容差、集成电路(IC)工艺变化等等所导致的振荡频率变化。
VCO的电路组件通常会随温度而变化。因此,VCO的振荡频率通常会随温度变化而发生漂移。对于许多应用(例如,无线通信)而言,与温度相关的频率漂移是人们所关注的问题且通过将VCO设计成具有覆盖此频率漂移的额外调谐范围来虑及此问题。所述额外调谐范围可能会降低VCO的相位噪声性能。相位噪声是指一振荡器信号的短期随机频率波动且是一用于描述此振荡器信号品质的参数。如果可使此种与温度相关的频率漂移降低或最小化,则有可能提高VCO的总体性能。
因此,业内需要一种具有温度补偿的VCO。
发明内容
使用反偏压二极管获得带温度补偿的VCO。VCO的振荡频率通常会随温度的升高而降低。发生此种现象的主要原因是决定此振荡频率的电容器及电感器的值随温度增大。反偏压二极管(即被施以一反偏压的二极管)具有一随反偏压的大小而变化的电容。反偏压二极管的此一特征可用来实现对VCO的温度补偿。
一实施例提供一种包括一VCO及至少一个反偏压二极管的集成电路。所述VCO提供一具有一频率的振荡器信号。在一实例性设计中,所述VCO包括一可提供所需信号增益的放大器、一可提供所需相移的谐振器振谐电路及至少一个用于对所述振荡器信号的频率实施调谐的频率调谐电路。每一频率调谐电路包括至少一个调谐电容器及至少一个金属氧化物半导体(MOS)传送晶体管,所述MOS传送晶体管用于连接这一(这些)调谐电容器与所述谐振器振谐电路或断开这一(这些)调谐电容器与所述谐振器振谐电路的连接。
所述至少一个反偏压二极管的电容可由一反偏压控制,以补偿振荡频率随温度的漂移。每一反偏压二极管可为一寄生二极管,其形成于一MOS晶体管(例如,频率调谐电路中的MOS传送晶体管)的漏极或源极结处。一偏压产生器为所述至少一个反偏压二极管产生适宜的反偏压。
附图说明
结合以下附图阅读上文所作详细说明可更易于了解本发明的特征及性质,其中各图中相同的参考符号表示相同的含义,且其中:
图1A及1B显示两种VCO设计;
图2显示一用于图1A中VCO的CMOS设计;
图3及图5显示VCO的两种粗调谐电路;
图4A及4B显示一频率调谐电路及其等效电路;
图6A及6B显示另一频率调谐电路及其等效电路;
图7显示一二极管的电容与反偏压的关系曲线图;
图8及图10显示两种偏压产生器;
图9显示图8中偏压产生器的偏压与温度的关系曲线图;
图11显示一种使用反偏压二极管对一VCO进行温度补偿的方法;
图12显示一种无线装置;及
图13显示此无线装置内的一数字信号处理器(DSP)。
具体实施方式
可通过业内已知的各种设计来构建一VCO。某些VCO设计更适合于射频(RF)、制作于IC上或适合于提供更佳的相位噪声性能。也可根据将使用VCO的应用的要求来将此VCO设计成以一特定频率或一频率范围工作。
图1A显示一第一设计中一VCO100的示意图。VCO100包括一放大器110及一谐振器振谐电路120,此谐振器振谐电路120由一电感器130及一可变电容器140构成。放大器110提供为实现振荡所需的信号增益。放大器110及谐振器振谐电路120共同提供为实现振荡所需的360°相移。VCO100提供一具有一基频fosc的振荡器信号(Osc)。此振荡频率fosc主要取决于电感器130的电感(L)及可变电容器140的电容(C),且可表达为下式:
图1B显示一第二设计中一VCO150的示意图。VCO150包括一放大器160及一谐振器振谐电路170,此谐振器振谐电路170由一电感器180及可变电容器190和192构成。放大器160提供为实现振荡所需的信号增益。放大器160及谐振器振谐电路170共同提供为实现振荡所需的相移。振荡频率fosc主要取决于电感器180的值及可变电容器190和192的值,如方程式(1)中所示。
图1A及1B显示两种实例性VCO设计。其他设计也可用于VCO。为简明起见,图1A及1B仅显示VCO100及150的基本电路组件。一VCO通常包括其他支持电路以提供偏压、频率控制等等。图1A及1B中未显示此种支持电路。
VCO100及150可按各种形式构建且可使用诸如互补金属氧化物半导体(CMOS)、双极结晶体管(BJT)、双极CMOS(BiCMOS)、硅锗(SiGe)、硅砷(GaAs)等各种IC工艺技术来制造。
图2显示一VCO100a的示意图,VCO100a是图1A中所示VCO100的一实例性CMOS设计。VCO100a包括一放大器110a及一谐振器振谐电路120a—其分别为图1A中所示放大器110及谐振器振谐电路120的一实施例。VCO100a可制作于一CMOSIC上。
放大器110a由N-沟道MOS(N-MOS)晶体管210a和210b及P-沟道MOS(P-MOS)晶体管212a和212b构成。晶体管210a及212a形成一第一反相器,晶体管210b及212b形成一第二反相器。晶体管210a的源极耦接至电路接地,其漏极耦接至晶体管212a的漏极,且其栅极耦接至一节点V+ out。晶体管212a的源极耦接至一电源VDD,其漏极耦接至晶体管210a的漏极,且其栅极耦接至节点V+ out。晶体管210b及212b以与晶体管210a及212a相似的方式耦接。节点V+ out及V- out分别表示所述第一反相器的输入端及输出端。节点V- out及V+ out也分别表示所述第二反相器的输入端及输出端。所述第一及第二反相器由此以一闭环配置串联耦接。节点V+ out及V- out也可进一步表示VCO 100a的差动输出。
谐振器振谐电路120a由一电感器230、一可变电容器240及一粗调谐电路250构成,所有这些组件均并联耦接于节点V- out与V+ out之问。电感器230及可变电容器240可制作于晶片上或可通过外部电路组件来构建。可变电容器240可经调节以获得VCO100a所需的振荡频率。例如,可变电容器240可用于:(1)补偿因电源、温度等变化所导致的频率漂移;及(2)跟踪所接收RF信号的输入频率。可变电容器240可由多个可变电容器代替(所述可变电容器可串联或并联耦接)以提供更宽的调谐范围。
粗调谐电路250可用于选择不同的工作频率或不同的工作频带。例如,一无线装置能够与多个无线通信系统进行通信。每一系统可与一不同的工作频率相关联。因此,粗调谐电路250可用于将VCO的振荡频率调谐至此无线装置与之进行通信的系统的频率。作为另一实例,此无线装置可与单个可在多个频带上传输的无线通信系统进行通信。因此,可对粗调谐电路250加以控制,以使VCO以所期望频带工作。
一偏压产生器260为粗调谐电路250产生一偏压Vbias。一控制器270为粗调谐电路250提供一L位控制信号S[1..L]及为偏压产生器260提供一M位控制信号G[1..M]。一般而言,L≥1且M≥1。下文将阐述偏压产生器260的某些实例性设计。
图3显示一粗调谐电路250a的示意图,此粗调谐电路250a为图2中所示粗调谐电路250的一实施例。粗调谐电路250a包括L个频率调谐电路310a至3101以用于L条调谐支路。每一频率调谐电路310均由一来自控制器270的相应S[x]控制信号控制,其中x=1..L。
每一频率调谐电路310包括调谐电容器312和314及一N-MOS传送晶体管316,所有这些组件均串联耦接于节点V- out与V+ out之间。传送晶体管316接收S[x]控制信号,以启用或禁用此晶体管。传送晶体管316充当一开关,以将调谐电容器312和314连接至节点V- out及V+ out或断开调谐电容器312和314与节点V- out及V+ out的连接。当S[x]控制信号启用传送晶体管316时,通过调谐电容器312及314的信号路径闭合。这些电容器由此连接于节点V- out与V+ out之间并直接影响VCO100a的振荡频率。
对于图3所示的实施例而言,所述L个频率调谐电路310a至3101均构建有二进制解码(即二进制加权)。为实现二进制解码,用于频率调谐电路310a的电容器312a及314a具有电容CT,用于频率调谐电路310b的电容器312b及314b具有电容2CT,以此类推,用于频率调谐电路3101的电容器3121及3141具有电容2L-1CT。用于最低有效位(LSB)的频率调谐电路310a具有最小调谐电容,而用于最高有效位(MSB)的频率调谐电路3101具有最大调谐电容。
也可对粗频率调谐电路250a使用热解码。在此种情况下,所述L个频率调谐电路310a至3101中的每一个中的调谐电容器均具有相同的电容CT。
每一调谐支路的品质因数(Q)可表示如下:
其中Cb为所述支路的总调谐电容,及
Rb为所述支路的串联电阻。
为了使所述L条支路中的每一条支路均获得相同的品质因数,每一支路的传送晶体管316均具有一由所述支路的调谐电容器所决定的尺寸。对于二进制解码而言,第二支路(电路310b)的调谐电容为第一支路(电路310a)的调谐电容的两倍。为了使第二支路获得相同的Q,将该支路的串联电阻相对于第一支路的串联电阻减少二分的一。此种电阻减小可通过使传送晶体管316b的宽度相对于晶体管316a的宽度(W)加倍而达成。其他支路的晶体管尺寸以同样方式加以确定,以获得相同的Q,如图3所示。
为简明起见,图3仅显示粗调谐电路250a的基本电路组件。为简明起见,图3中未显示用于控制传送晶体管及用于对调谐电容器施加偏压的其他电路。
图4A显示频率调谐电路310x的示意图,频率调谐电路310x为图3所示L个频率调谐电路中的一个。电路310x包括调谐电容器312x和314x及传送晶体管316x,其均如上文所述串联耦接于节点V- out与V+ out之间。电路310x进一步包括一反相器320x及电阻器322x和324x,以用于为调谐电容器312x和314x及传送晶体管316x提供偏压。电阻器322x和324x的一端耦接至反相器320x的输出端,且另一端分别耦接至传送晶体管316x的源极及漏极。反相器320x在其信号输入端处接收用于电路310x的S[x]控制信号且在其电源输入端处接收偏压Vbias,并将一偏压信号Bx提供至电阻器322x及324x。
频率调谐电路310x按下文所述方式工作。当S[x]控制信号为逻辑高时,Bx偏压信号的电压为零,传送晶体管316x导通,且调谐电容器312x及314x连接至节点V- out及V+ out。反之,当S[x]控制信号为逻辑低时,Bx偏压信号处于偏压Vbias,传送晶体管316x关断,且调谐电容器312x及314x处于浮动状态且不连接至节点V- out及V+ out。当传送晶体管316x关断时,传送晶体管316x的源极结和漏极结被施以Vbias伏特的反偏压。此反偏压可确保传送晶体管316x完全关断并进一步减小晶体管的寄生电容。
在大多数VCO中,例如在VCO 100a中,振荡频率会随温度升高而降低。此种现象的主要原因是在决定振荡频率中起主要作用的电容器及电感器的值会随温度而增大。电容随温度而增加是因在温度升高时电子迁移率及潜在电压变化均增大。由于振荡频率与电容及电感成反比,如方程式(1)所示,因而增大电容及/或电感会使振荡频率下降。
对于一制作于一集成电路上的VCO而言,寄生二极管形成于一被施以反偏压的MOS晶体管的源极及漏极结处。例如,在图4A中,当Bx偏压信号处于电压Vbias且S[x]控制信号为逻辑低时,N-MOS传送晶体管316x的源极及漏极结被施以反偏压,且寄生二极管332x及334x分别形成于所述被施以反偏压的源极及漏极结处。寄生二极管332x及334x的电容也随温度而增大。寄生二极管332x及334x的电容可能是总电容随温度变化的一主要源(且在某些情况下为一支配源)。
图4B显示当关断传送晶体管316x时频率调谐电路310x的一等效电路311x的示意图。对于等效电路311x而言,传送晶体管316x被移除,但寄生二极管332x及334x存在且分别通过电容为Cdiode的寄生电容器412x及414x来建模。电容器312x及412x串联耦接于节点V- out与电路接地之间。同样地,电容器314x及414x串联耦接于节点V+ out与电路接地之间。由于结寄生电容通常远小于调谐电容(即,Cdiode<<Cx),因而串联耦接的电容器312x及412x的总电容主要取决于所述结寄生电容决定。
结寄生电容Cdiode取决于寄生二极管332x及334x的大小,此大小又取决于传送晶体管316x的大小。如果传送晶体管316x的漏极及源极面积很大(例如,当为了使调谐支路获得高品质因数时即如此),则寄生二极管332x及334x可相对较大。因此,结寄生电容可对振荡频率具有不可忽略的影响,但此影响可如下文所述得到补偿。
图5显示一粗调谐电路250b的示意图,此粗调谐电路250b为图2中粗调谐电路250的另一实施例。粗调谐电路250b包括L个频率调谐电路510a至5101,每一频率调谐电路均各自由一来自控制器270的S[x]控制信号控制。粗调谐电路250b提供相对于电路接地的「分路(shunt)」调谐电容,而粗调谐电路250a在节点V- out及V+ out之间提供「并联(parallel)」调谐电容。粗调谐电路250b也可用于图1B中所示的VCO设计。
每一频率调谐电路510包括调谐电容器512和514及N-MOS传送晶体管516和518。传送晶体管516和518的源极耦接至电路接地,其栅极彼此耦接在一起,且其漏极分别耦接至调谐电容器512和514的一端。调谐电容器512和514的另一端分别耦接至节点V- out及V+ out处。传送晶体管516和518接收S[x]控制信号并充当开关,以将调谐电容器512和514连接至节点V- out及V+ out处或断开调谐电容器512和514与节点V- out及V+ out的连接。
对于图5中所示的实施例而言,所述L个频率调谐电路510a至5101均以二进制解码来实施,如上文针对图3所述。
图6A显示频率调谐电路510x的示意图,此频率调谐电路510x为图5所示L个频率调谐电路510中的一个。电路510x包括调谐电容器512x和514x及传送晶体管516x和518x—其均如上所述进行耦接。电路510x进一步包括一反相器520x及电阻器522x和524x,其均用于为调谐电容器512x和514x及传送晶体管516x和518x提供偏压,亦如上文所述。当这些晶体管关断且在所述漏极结处施加一反偏压时,寄生二极管532x和534x形成于传送晶体管516x和518x的漏极处。
图6B显示当关断传送晶体管516x和518x时频率调谐电路510x的一等效电路511x的示意图。对于等效电路511x而言,传送晶体管516x和518x被移除,但寄生二极管532x及534x存在且分别通过电容为Cdiod。的寄生电容器612x及614x来建模。电容器512x及612x串联耦接于节点V- out与电路接地之间。同样地,电容器514x及614x串联耦接于节点V+ out及电路接地之间。等效电路511x与图4B中的等效电路311x相类似。
反偏压二极管(例如,图4A中的寄生二极管332x和334x及图6A中的寄生二极管532x和534x)的电容会随温度而增大。此会导致振荡频率随温度升高而下降。频率下降量可能会相对较大。例如,在一实例性VCO设计中,观察到寄生二极管332x和334x的电容在一规定的温度范围内增加了0.8%(或约11fF),此导致振荡频率自标称频率2GHz下降了8MHz。对于某些其中频率稳定性对于获得较佳系统性能非常重要的应用(例如无线通信)而言,可能会认为此频率漂移量较大。
对VCO(例如VCO100a)的温度补偿可使用反偏压二极管来实现。一般而言,反偏压二极管可制作于一专用于温度补偿的集成电路上或可为寄生二极管,例如形成于MOS晶体管的结处的寄生二极管。当反偏压增加时,反偏压二极管的电容会降低。通过施加一适宜的反偏压,可使二极管电容降低一适宜的量以补偿因温度而导致的二极管及可能VCO中其他电路组件的任何电容增大。下文将详细阐述使用反偏压二极管进行的温度补偿。
图7显示一反偏压二极管的电容与反偏压之间的关系曲线图。竖轴表示此反偏压二极管的电容(Cdiode),横轴表示此二极管的反偏压(Vrb)。对于一既定温度而言,可根据电脑仿真、实验测量等来获得此反偏压二极管的电容与反偏压之间的关系曲线图。在图7中,曲线712显示在一低温(例如,25℃)下电容与反偏压之间的关系,曲线714显示在一高温(例如,90℃)下电容与反偏压之问的关系。这些曲线表明,当对二极管施加一变大的反偏压时,反偏压二极管的电容会降低。这些曲线还表明,曲线的形状在不同温度下近似相同。然而,高温曲线714相对于低温曲线712上移。
当被施以反偏压Vrb1时,反偏压二极管在低温下具有一电容Cd1。如果对该反偏压二极管施加相同的反偏压Vrb1,则此二极管的电容在高温下会增加至Cd2。所述自Cd1至Cd2的电容增加会导致振荡频率下降,如上文所述。可通过对该二极管施加一反偏压Vrb2而在高温下获得电容Cd1。因此,通过将反偏压自Vrb1增加至Vrb2,可在低温至高温的范围内使此反偏压二极管的电容维持近似恒定。在一实例性设计中,可通过将反偏压自2.0伏特增加至2.4伏特而使二极管电容降低9fF。
反偏压二极管也可用于补偿VCO中其他电路组件的变化。例如,重新参照图4A及4B,寄生二极管332x可用于补偿二极管332x的电容以及调谐电容器312x的电容的变化,从而使此支路的总电容随温度变化而保持近似恒定。粗调谐电路250a中所有被禁用的支路的寄生二极管也可用于补偿电感器230、可变电容器240以及VCO 100a中其他电路组件(例如,晶体管210a、210b、212a及212b)的变化。制作于一集成电路上的电感器及电容器通常对温度并不敏感且可能几乎不随温度发生变化(百分比范围)。制作于一集成电路上的二极管则通常对温度更为敏感(与电感器和电容器相比)且其电容通常会随温度发生更大变化(百分比范围)。因此,可通过反偏压二极管来补偿电感器及电容器的与温度相关的变化。
对于VCO100a而言,粗调谐电路250可能是频率随温度变化的主要原因。然而,可供用于温度补偿的反偏压二极管的数量及大小与导致与温度相关的频率变化的二极管的数量和大小相关。例如,用于调谐控制S[L]中最高有效位的频率调谐电路3101具有最大的寄生二极管(产生于尺寸最大的传送晶体管),并由此导致最大的与温度相关的频率变化。然而,频率调谐电路3101也可采用最大的反向结电容来进行温度补偿。作为另一实例,当禁用更多支路时,会有更多的寄生二极管可造成与温度相关的频率变化及进行温度补偿。
可将一适宜的偏压Vbias施加于传送晶体管的寄生二极管来对VCO 100a进行温度补偿。所述适宜的偏压取决于:(1)寄生二极管的期望电容变化量;及(2)反向结电容与反偏压之间的函数。所期望的电容变化可取决于各种因素,例如VCO设计、VCO的电路组件等等。电容与反偏压之间的函数也可取决于各种因素,例如MOS晶体管设计、IC工艺等等。在任一情况下,均可通过电脑仿真、实验测量等等来确定反偏压与温度之间的总体函数以实现对VCO的温度补偿。
再次参照图4A,当关断传送晶体管316x时,来自反相器320x的Bx偏压信号为寄生二极管332x及334x提供反偏压。Bx偏压信号的电压取决于提供至反相器320x的电源输入端的偏压Vbias。可按各种方式产生偏压Vbias,下文将对其中的某些方式加以阐述。
图8显示一偏压产生器260a的示意图,此偏压产生器260a是图2所示偏压产生器260的一实施例。产生器260a可为传送晶体管的寄生二极管产生偏压Vbias°
偏压产生器260a包括一电流源810、一P-MOS晶体管812、M+1个P-MOS晶体管814a至814n、分别用于晶体管814a至814m的M个开关816a至816m、以及一负载电阻器818。一般而言,M可为1或任何更大的整数。晶体管812的源极耦接至电源VDD,且其栅极耦接至其漏极。电流源810的一端耦接至晶体管812的漏极且其另一端耦接至电路接地。晶体管814n的源极耦接至电源,其栅极耦接至晶体管812的栅极且其漏极耦接至偏压Vbias的一节点。晶体管814a至814m中每一个晶体管的源极均耦接至电源,其栅极耦接至晶体管812的栅极且其漏极耦接至相应开关816的一端。开关816a至816m的另一端耦接至Vbias节点。负载电阻器818耦接于Vbias节点与电路接地之间。
偏压产生器260a按下述方式工作。电流源810提供一偏流Ibias。晶体管812及晶体管814a至814n形成一电流镜。晶体管814a至814n中的每一个均提供一种类型的偏流Ibias。具体而言,流过每一晶体管814a至814n的电流均取决于偏流Ibias及晶体管814的大小对晶体管812的大小之比。晶体管814a至814m可构建有二进制解码(即具有增大的晶体管大小)或热解码(即具有相同的晶体管大小)。晶体管814n始终导通并将其电流提供给负载电阻器818。开关816a至816m分别接收用于断开或闭合这些开关的控制信号G[1]至G[M]。当一既定开关816闭合时,流过相关晶体管814的电流被提供至负载电阻器818。Vbias节点上的电压取决于:(1)由所有被启用晶体管814提供至负载电阻器818的总电流;及(2)电阻器818的电阻。当启用更多开关816时,会有更大的电流提供至负载电阻器818且为偏压Vbias获得一更高的电压。
可通过一相依于温度的电流或一相依于温度的电阻器来获得一相依于温度的偏压Vbias。例如,负载电阻器818可为一固定值且偏流Ibias可与绝对温度成正比(PTAT),此意味着电流将随绝对温度(单位:°K)线性增加。另一选择为,偏流Ibias可为一固定值且负载电阻器818的电阻可与绝对温度成正比。
图9显示图8中的偏压产生器260a的偏压Vbias与温度之间的关系曲线。当所有开关816a至816m均关断时,仅晶体管814n向负载电阻器818提供电流,曲线914n显示在此种情况下偏压Vbias与温度之间的关系。此时偏压Vbias会随温度的增高而线性增加,这是因为偏流Ibias随温度的升高而线性增加。当开关816a导通时,晶体管814a及814n将电流提供至负载电阻器818,曲线914a即显示在此种情况下偏压Vbias与温度之间的关系。曲线914a的斜率高于曲线914n,这是因为附加晶体管814a向负载电阻器818提供了更多的电流。随着更多开关816的导通以及更多晶体管814将其电流提供至负载电阻器818,曲线914b至914m具有逐渐增高的斜率。通过导通各开关816的一适宜组合,可获得为实现对VCO100a的温度补偿的而需要的总体函数。
图10显示一偏压产生器260b的图式,此偏压产生器260b为图2中偏压产生器260的另一实施例。偏压产生器260b包括一查用表(LUT)1012及一数字-模拟转换器(DAC)1014。查用表1012用于存储反偏压与温度之间的总体函数。查用表1012接收一温度指示(例如,其可由PTAT电路提供)并提供一相应的控制字。DAC1014接收所述控制字并将其转换成一电压,所述电压将作为偏压Vbias提供。偏压产生器260b在产生偏压Vbias方面可提供更大的灵活性。查用表1012可执行任何线性或非线性函数且可易于通过一新函数加以修改。
上文阐述了两种用于为反偏压/寄生二极管产生偏压Vbias以实现对VCO的温度补偿的实例性设计。也可按其他方式产生偏压Vbias,且此仍属于本发明的范畴。
图11显示一种使用反偏压二极管对一VCO进行温度补偿的过程1100。根据(例如)一具有与绝对温度成正比的特性的电路组件来估测VCO的温度(方块1112)。然后根据反偏压与温度之间的函数来产生一对应于此所估测温度的反偏压(方块1114)。将此反偏压施加于至少一个反偏压二极管以补偿振荡频率随温度的漂移(方块1116)。所述反偏压能调节反偏压二极管的电容以补偿由温度引起的VCO的电容变化。
使用反偏压二极管获得的带温度补偿的VCO可用于各种系统及应用场合,例如用于通信、联网、计算、用户电子设备等等。例如,这些温度补偿型VCO可用于无线通信系统中,例如用于码分多址(CDMA)系统、时分多址(TDMA)系统、全球移动通信系统(GSM)系统、高级移动电话系统(AMPS)、全球定位系统(GPS)、多输入多输出(MIMO)系统、正交分频多路复用(OFDM)系统、正交频分多址(OFDMA)系统、无线局域网(WLAN)等等。下文将阐述温度补偿型VCO在无线通信中的应用。
图12显示一可用于无线通信的无线装置1200的方块图。无线装置1200可为一蜂窝电话、一终端机、一手持电话或某些其他装置或设计。无线装置1200能够通过一发射路径及一接收路径提供双向通信。
在发射路径上,一数字信号处理器(DSP)1210可处理拟发射资料并将一码片流提供至一收发机单元1220。在收发机单元1220内,一个或多个数字-模拟转换器(DAC)1222将此码片流转换成一个或多个模拟信号。这一(这些)模拟信号经由一滤波器1224滤波、经由一可变增益放大器(VGA)1226放大并由一混合器1228自基频带上变频至RF频带以产生一RF信号。此种上变频是通过一来自VCO1230的上变频LO信号进行。此RF信号经由一滤波器1232滤波、经由一功率放大器(PA)1234放大、经由一双工器(D)1236选路并经一天线1240发射。
在接收路径上,一经调制的信号由天线1240接收到、经由一双工器(D)1236选路、经一低噪声放大器(LNA)1244放大、经由一滤波器1246滤波并由一混合器1248使用一来自VCO1250的下变频LO信号自RF频带下变频至基频带。经下变频的信号经由缓冲器1252缓冲、经由滤波器1254滤波并由一个或多个数字-模拟转换器(ADC)1256数字化以获得一个或多个样本流。这一(这些)样本流提供至数字信号处理器1210进行处理。
图12显示一具体的收发机设计。在一典型的收发机中,对每一路径的信号调节均可由业内已知的一级或多级放大器、滤波器、混合器等来实施。图12仅显示某些可用于信号调节的电路块。
对于图12所示的实施例而言,收发机单元1220包括两个分别用于发射路径及接收路径的VCO1230及1250。可采用各种VCO设计来构建VCO1230及1250,例如图2中所示的设计。每一VCO也可设计成以一特定频率或一频率范围工作。例如,可将VCO1230及1250设计成以一个或多个下述频带的整倍数(例如2倍)来工作:
·个人通信系统(PCS)频带,自1850至1990MHz;
·蜂窝频带,自824至894MHz;
·数字蜂窝系统(DCS)频带,自1710至1880MHz;
·GSM900频带,自890至960MHz;
·国际移动电信-2000(IMT-2000)频带,自1920至2170MHz;及
·全球定位系统(GPS)频带,自1574.4至1576.4MHz。
VCO1230及1250可设计成通过在粗调谐电路中提供足够的调谐电容器而以多个频带工作。一锁相环(PLL)1260自数字信号处理器1210接收控制信息并为VCO1230及1250提供控制,以分别产生适当的上变频及下变频LO信号。
图13显示DSP1210的一实施例的方块图。DSP1210包括各种处理单元,例如(举例而言)一乘法-加法(MACC)单元1322、一算术逻辑单元(ALU)1324、一内部控制器1326、一处理器1328、一存储器单元1330以及一总线控制单元1332,所有这些均经由一总线1336耦接在一起。DSP1210可进一步包括一VCO/PLL1334,其具有一可通过图2中所示VCO 100a来构建的VCO。此VCO产生一振荡信号,以用于为DSP 1210中的处理单元及可能DSP 1210外部的处理单元(例如一主控制器1340及一主存储器单元1342)产生时钟信号。DSP 1210可(1)对发射路径实施编码、交错、调制、码通道化、频谱扩展等等;及(2)对接收路径实施解扩频、码通道化、解调、解交错、解码等等。DSP 1210所执行的处理取决于通信系统。
无线装置1200可视为包括一数字部分及一模拟部分。所述数字部分(例如,DSP1210且可能为DAC 1222及ADC 1256)可构建于一个或多个数字集成电路上。所述模拟部分(例如,收发机单元1220的剩余部分)可构建于一个或多个RF集成电路(RFIC)上及/或具有其他离散组件。
本文所述温度补偿型VCO可用于各种类型的IC,例如RFIC及数字IC。这些VCO也可用于DSP、应用专用集成电路(ASIC)、处理器、控制器等等。本文所述温度补偿技术可用于各种类型的振荡器,例如VCO、流控振荡器(ICO)、压控晶体振荡器(VCXO)等等。本文所述温度补偿技术也可用于其他类型的电路,例如可调谐滤波器等等。
提供上文对所揭示实施例的说明旨在使所属领域的技术人员能够制作或利用本发明。所属领域的技术人员将易知对这些实施例的各种修改形式,且本文所述的一般原则也可适用于其他实施例,此并不背离本发明的精神或范畴。因此,本发明并非意欲仅限于本文所示实施例,而是将被赋予与本文所揭示原则及新颖特征相一致的最宽广范畴。
Claims (18)
1.一种集成电路,其包括:
一压控振荡器,其用于提供一具有一频率的振荡器信号;及
至少一个反偏压二极管,其具有一电容,所述电容由一反偏压控制以补偿所述振荡器信号的所述频率因温度所致的漂移;
一电流源,其用于提供一偏流;
一电流镜,其包括与同一晶体管形成所述电流镜的复数个晶体管,所述电流镜用于提供所述偏流的至少一种形式;及
一负载电阻器,其用于接收所述偏流的所述至少一种形式并提供所述反偏压,
其中所述偏流的所述至少一种形式可选自所述偏流的复数种可能的形式,且其中通过选择偏流形式的不同组合来获得反偏压对温度的不同函数。
2.如权利要求1所述的集成电路,其中所述至少一个反偏压二极管中的每一个均由所述集成电路内的一寄生二极管形成。
3.如权利要求2所述的集成电路,其中所述寄生二极管形成于一金属-氧化物半导体(MOS)晶体管的一漏极结或一源极结处。
4.如权利要求1所述的集成电路,其中所述压控振荡器包括
一放大器,其用于为所述压控振荡器提供信号增益,
一谐振器振谐电路,其用于为所述压控振荡器提供相移,及
至少一个频率调谐电路,其用于对所述振荡器信号的所述频率进行调谐,每一频率调谐电路均包括至少一个调谐电容器及至少一个金属-氧化物半导体(MOS)晶体管,所述金属-氧化物半导体(MOS)晶体管用于连接所述至少一个调谐电容器与所述谐振器振谐电路或断开所述至少一个调谐电容器与所述谐振器振谐电路的连接。
5.如权利要求4所述的集成电路,其中所述压控振荡器包括复数个频率调谐电路,所述复数个频率调谐电路具有逐渐增大的调谐电容器。
6.如权利要求5所述的集成电路,其中对于所述复数个频率调谐电路中的每一个而言,用于所述频率调谐电路的所述至少一个金属-氧化物半导体晶体管的大小与用于所述频率调谐电路的所述至少一个调谐电容器的电容成正比。
7.如权利要求4所述的集成电路,其中所述至少一个反偏压二极管由所述至少一个金属-氧化物半导体晶体管处的寄生二极管形成。
8.如权利要求1所述的集成电路,其中所述所述电流源用于提供一与绝对温度成正比的偏流。
9.如权利要求1所述的集成电路,进一步包含:
一偏压产生器,其用于为所述至少一个反偏压二极管提供所述反偏压,所述偏压产生器包含一电阻器,所述电阻器具有一与绝对温度成正比的电阻。
10.如权利要求1所述的集成电路,其中所述振荡器信号为一适用于在一无线通信系统中进行上变频或下变频的本地振荡器(LO)信号。
11.如权利要求10所述的集成电路,其中所述无线通信系统为一码分多址(CDMA)系统。
12.如权利要求10所述的集成电路,其中所述无线通信系统为一全球移动通信系统(GSM)系统。
13.一种无线装置,其包括:
一压控振荡器,其用于提供一具有一频率的振荡器信号;
至少一个反偏压二极管,其具有一电容,所述电容由一反偏压控制以补偿所述振荡器信号的所述频率因温度所致的漂移;
一电流源,其用于提供一偏流;
一电流镜,其包括与同一晶体管形成所述电流镜的复数个晶体管,所述电流镜用于提供所述偏流的至少一种形式;及
一负载电阻器,其用于接收所述偏流的所述至少一种形式并提供所述反偏压,
其中所述偏流的所述至少一种形式可选自所述偏流的复数种可能的形式,且其中通过选择偏流形式的不同组合来获得反偏压对温度的不同函数。
14.如权利要求13所述的无线装置,其中所述至少一个反偏压二极管中的每一个均由一金属-氧化物半导体(MOS)晶体管的一漏极结或一源极结处的一寄生二极管形成。
15.一种电路设备,其包括:
一压控振荡器,其用于提供一具有一频率的振荡器信号;及
至少一个反偏压二极管,其具有一电容,所述电容由一反偏压控制以补偿所述振荡器信号的所述频率因温度所致的漂移;
一电流源,其用于提供一偏流;
一电流镜,其包括与同一晶体管形成所述电流镜的复数个晶体管,所述电流镜用于提供所述偏流的至少一种形式;及
一负载电阻器,其用于接收所述偏流的所述至少一种形式并提供所述反偏压,
其中所述偏流的所述至少一种形式可选自所述偏流的复数种可能的形式,且其中通过选择偏流形式的不同组合来获得反偏压对温度的不同函数。
16.如权利要求15所述的设备,其中所述至少一个反偏压二极管中的每一个均由一金属-氧化物半导体(MOS)晶体管的一漏极结或一源极结处的一寄生二极管形成。
17.一种对一压控振荡器(VCO)进行温度补偿的方法,其包括:
估测所述压控振荡器的温度,其中通过一电路组件来估测所述压控振荡器的所述温度,所述电路组件具有一与绝对温度成正比的特性;
针对所述估测温度产生一反偏压,且产生包括:
产生一偏流,
产生所述偏流的复数种可能的形式,
基于反偏压对温度的函数,从所述偏流的所述复数种可能的形式中选择所述偏流的至少一种形式,
将选择的所述偏流的所述至少一种形式施加至一负载电阻器以提供所述反偏压;及
将所述反偏压施加至至少一个反偏压二极管以补偿因温度所致的压控振荡器的振荡频率的漂移。
18.如权利要求17所述的方法,其中所述至少一个反偏压二极管的电容由所述反偏压来调节以补偿所述压控振荡器的电容因温度所致的变化。
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US10/773,771 US7116183B2 (en) | 2004-02-05 | 2004-02-05 | Temperature compensated voltage controlled oscillator |
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Also Published As
Publication number | Publication date |
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TWI369067B (en) | 2012-07-21 |
WO2005078913A1 (en) | 2005-08-25 |
US7116183B2 (en) | 2006-10-03 |
TW200605490A (en) | 2006-02-01 |
CN1938938A (zh) | 2007-03-28 |
US20050174184A1 (en) | 2005-08-11 |
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