CN1931523A - Chemomechanical grinder and its grinding pad regulating method - Google Patents
Chemomechanical grinder and its grinding pad regulating method Download PDFInfo
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- CN1931523A CN1931523A CNA2005101038647A CN200510103864A CN1931523A CN 1931523 A CN1931523 A CN 1931523A CN A2005101038647 A CNA2005101038647 A CN A2005101038647A CN 200510103864 A CN200510103864 A CN 200510103864A CN 1931523 A CN1931523 A CN 1931523A
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- grinding pad
- chemical liquids
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Abstract
The chemomechanical grinder includes at least one grinding pan, one grinding pad, one grinding fluid supplying pipeline, one grinding pad regulator, one chemical fluid supplying pipeline and one dividing pipeline. The grinding disc has grinding fluid outlets in the surface and grinding pad configured on it. The grinding pad regulator is configured over the grinding pad, and the chemical fluid supplying pipeline is connected to the grinding pad regulator for supplying chemical grinding fluid to the regulator. The dividing pipeline is connected between the grinding fluid supplying pipeline and the chemical fluid -supplying pipeline for supplying the grinding fluid and the chemical fluid to the surface of the grinding pad. The chemomechanical grinder has excellent grinding effect.
Description
Technical field
The present invention relates to a kind of cmp (Chemical Mechanical Polishing, CMP) device, particularly relate to a kind of chemical mechanical polishing device that is suitable for providing a good grinding effect with and the control method of grinding pad.
Background technology
Along with component size continues reduction, photolithographic exposure resolution ratio needs relatively to promote thereupon.And being accompanied by the reduction of the exposure depth of field, will be more harsh for the requirement of the tolerance of the height fluctuating profile of chip surface.Cmp is the technology that the comprehensive planarization of super large-scale integration technology can be provided at present, the worn character of its anisotropy is except the planarization that is used for the chip surface profile, also can be applied to vertically reach the making that the horizontal metal lead connects (Interconnects) via the mode of metal grinding, or in the FEOL element shallow trench isolation from making and the making of advanced device, or the making of MEMS planarization and flat-panel screens etc.
Fig. 1 illustrates the schematic diagram into existing a kind of chemical mechanical polishing device.Please refer to Fig. 1, existing chemical mechanical polishing device 100 comprises abrasive disk 110, grinding pad 120, polishing liquid feeding pipe 130, grinding pad adjuster 150 at least, and chemical liquids feeding pipe 160 etc.
Please refer to Fig. 1, have a plurality of lapping liquid outlets 112 on abrasive disk 110 surfaces, and grinding pad 120 is disposed on the abrasive disk 110.Abrasive disk 110 drives grinding pad 120 rotations by a carrying machine (not illustrating), and cooperates lapping liquid with for the structure that needs global planarization (Global Plantation) in chip itself or the semiconductor technology, carries out chemical mechanical milling tech.
Polishing liquid feeding pipe 130 is connected in abrasive disk 110 bottoms, and lapping liquid supplies with groove 140 by lapping liquid and provide, and is suitable for being supplied on grinding pad 120 surfaces from abrasive disk 110 belows via lapping liquid outlet 112.Because lapping liquid is to grind slurry (Slurry), if lapping liquid concentration is too high, or the lapping liquid residue and residual stays lapping liquid outlet 112, will cause lapping liquid to export 112 obstruction.And the lapping liquid that part is stopped up outlet 112 can't continue to provide equably lapping liquid to grinding pad 120, thus, will influence the flatness of subsequent chemistry mechanical lapping or even cause the defective of element.
Please continue with reference to Fig. 1, grinding pad adjuster 150 is disposed at grinding pad 120 tops, and chemical liquids feeding pipe 160 connects grinding pad adjuster 150 and chemical liquids supply groove 170, and chemical liquids is suitable for supplying with groove 170 via chemical liquids feeding pipe 160 from chemical liquids, and provides to grinding pad adjuster 150.
After grind stopping, the lapping liquid residue will be adhered in the surface of grinding pad 120, and at this moment, grinding pad adjuster 150 is used to regulate grinding pad 120, and the lapping liquid residue on grinding pad 120 surfaces is removed.Yet list provides chemical liquids to move to the adjusting on the grinding pad 120 from grinding pad adjuster 150, and its adjusting effect to grinding pad 120 is limited.
Summary of the invention
Purpose of the present invention is providing a kind of chemical mechanical polishing device exactly, and it is suitable for providing the adjusting effect of a preferred cmp effect with preferred grinding pad.
A further object of the present invention provides a kind of control method of grinding pad, and it is suitable for regulating grinding pad and makes it that preferred cmp effect be arranged.
The present invention proposes a kind of chemical mechanical polishing device, comprises an abrasive disk, a grinding pad, a polishing liquid feeding pipe, a grinding pad adjuster, a chemical liquids feeding pipe and a distribution pipeline at least.Wherein, have a plurality of lapping liquid outlets on the abrasive disk surface, and grinding pad is disposed on the abrasive disk.Polishing liquid feeding pipe is connected in the abrasive disk bottom, and is suitable for supplying with a lapping liquid from the abrasive disk below to the grinding pad surface via the lapping liquid outlet.The grinding pad regulator configuration is in the grinding pad top, and the chemical liquids feeding pipe is connected in the grinding pad adjuster, and is suitable for providing chemical liquid to the grinding pad adjuster.Distribution pipeline is connected between polishing liquid feeding pipe and the chemical liquids feeding pipe, is suitable for making chemical liquids to be supplied on the grinding pad surface via chemical liquids feeding pipe, polishing liquid feeding pipe and lapping liquid outlet.
According to the described chemical mechanical polishing device of the preferred embodiments of the present invention, above-mentioned one first control valve that on distribution pipeline, also is provided with, and one second control valve also is set on polishing liquid feeding pipe.Wherein, when supplying lapping liquid to grinding pad, first control valve is closed, and second control valve is opened.In addition, when supplying chemical liquid during to grinding pad, first control valve is opened, and second control valve is closed.
The present invention proposes a kind of control method of grinding pad, is applicable to above-mentioned chemical mechanical polishing device.The control method of this grinding pad is after with chemical mechanical polishing device the layer to be ground on the wafer being ground, chemical liquids is supplied to the grinding pad adjuster via the chemical liquids feeding pipe, simultaneously chemical liquids is supplied on the grinding pad via distribution pipeline, polishing liquid feeding pipe, and uses the grinding pad adjuster to regulate the grinding pad surface.
According to the control method of the described grinding pad of the preferred embodiments of the present invention, above-mentioned layer to be ground comprises metal level.
According to the control method of the described grinding pad of the preferred embodiments of the present invention, above-mentioned metal level comprises copper, and lapping liquid for example comprises acid solution, and chemical liquids for example comprises acid solution, and chemical liquids can be to contain oxalic acid solution.
According to the control method of the described grinding pad of the preferred embodiments of the present invention, above-mentioned metal level comprises tungsten, and lapping liquid for example comprises acid solution, and chemical liquids for example is a deionized water.
According to the control method of the described grinding pad of the preferred embodiments of the present invention, above-mentioned metal level comprises tantalum nitride, and lapping liquid for example comprises alkaline solution, and chemical liquids for example is a deionized water.
The present invention is because of the top of employing self-grind pad and the chemical liquids feeding pipe of below transmitted in both directions, make the below of self-grind pad also can provide chemical liquids, with the molten lapping liquid residue that is blocked in the lapping liquid outlet that removes, and then the lapping liquid in the follow-up grinding technics can be evenly distributed on the grinding pad, to promote grinding effect.In addition, in the regulating step of grinding pad, the chemical liquids that comes from grinding pad top and below, can make chemical liquids more be evenly distributed on the grinding pad, so that grinding pad obtains preferred regulating effect, and further make grinding pad in follow-up chemical mechanical milling tech, have preferred grinding state.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Fig. 1 illustrates the schematic diagram into a kind of chemical mechanical polishing device in existing.
Fig. 2 illustrates the schematic diagram into a kind of chemical mechanical polishing device of one embodiment of the present invention.
The simple symbol explanation
100: existing chemical mechanical polishing device
110: abrasive disk
112: the lapping liquid outlet
120: grinding pad
130: polishing liquid feeding pipe
140: lapping liquid is supplied with groove
150: the grinding pad adjuster
160: the chemical liquids feeding pipe
170: chemical liquids is supplied with groove
200: chemical mechanical polishing device
210: abrasive disk
212: the lapping liquid outlet
220: grinding pad
230: polishing liquid feeding pipe
230a, 280a: control valve
240: lapping liquid is supplied with groove
250: the grinding pad adjuster
260: the chemical liquids feeding pipe
270: chemical liquids is supplied with groove
280: distribution pipeline
The specific embodiment
Fig. 2 illustrates the schematic diagram into a kind of chemical mechanical polishing device in one embodiment of the present invention.Please refer to Fig. 2, the chemical mechanical polishing device 200 of present embodiment comprises abrasive disk 210, grinding pad 220, polishing liquid feeding pipe 230, grinding pad adjuster 250, chemical liquids feeding pipe 260 and distribution pipeline 280 at least.
Please refer to Fig. 2, abrasive disk 210 is arranged in carrying machine (not illustrating), and drives abrasive disk 210 and rotate via carrying machine (not illustrating), and grinding pad 220 is disposed on the abrasive disk 210, and grinding pad 220 is accompanied by abrasive disk 210 and is rotated simultaneously, with worn layer to be ground.
Please continue with reference to Fig. 2, have a plurality of lapping liquids outlet 212 on abrasive disk 210 surfaces, and polishing liquid feeding pipe 230 is connected in the bottom of abrasive disk 210, and be suitable for supplying with lapping liquids to grinding pad 220 surfaces from abrasive disk 210 belows via lapping liquid outlet 212.In addition, the surface of grinding pad 210 also has a plurality of tiny holes (not illustrating), and lapping liquid can continue to transfer to by the hole on grinding pad 210 surfaces the lapped face of grinding pad 210, grinds for layer to be ground to cooperate grinding pad 210.
Please refer to Fig. 2, grinding pad adjuster 250 is disposed at grinding pad 220 tops, and chemical liquids feeding pipe 260 is connected in grinding pad adjuster 250, and is suitable for providing chemical liquid to grinding pad adjuster 250.This grinding pad adjuster 250 for example has many diamond brushes, the surface that can contact grinding pad 220 with the fine hair of removing grinding pad 220 rough surface injustice be attached to grinding pad 220 lip-deep lapping liquid residues, and fiting chemical liquid with react attached to the lapping liquid residue on the grinding pad 220, and then can promote the effect of removing the lapping liquid residue.
Please refer to Fig. 2, distribution pipeline 280 is connected between polishing liquid feeding pipe 230 and the chemical liquids feeding pipe 260, is suitable for making chemical liquids to be supplied on grinding pad 220 surfaces via chemical liquids feeding pipe 260, polishing liquid feeding pipe 230 and lapping liquid outlet 212.
In a preferred embodiment, utilize the design of distribution pipeline 280, will make chemical liquids also can pass through distribution pipeline 280, the below of self-grind pad 220 is supplied on the grinding pad 220, so that grinding pad 220 is regulated.Particularly, because chemical liquids also can be supplied with by grinding pad 220 belows, so when the lapping liquid of chemical liquids by abrasive disk 210 exports 212, the also solvable lapping liquid residue that is deposited in lapping liquid outlet 212 that removes of chemical liquids will reach the effect of cleaning lapping liquid outlet 212 simultaneously.
Please refer to Fig. 2, in one embodiment, a control valve 280a is set also on the distribution pipeline 280, and another control valve 230a also is set on polishing liquid feeding pipe 230.Wherein, when supplying lapping liquid to grinding pad 220, control valve 280a closes, and control valve 230a opens.In addition, when supplying chemical liquid during to grinding pad 220, control valve 280a opens, and control valve 230a closes.
The control valve 280a that is provided with on the distribution pipeline 280, in order to flowing of control chemical liquids, and the control valve 230a that is provided with on the polishing liquid feeding pipe 230, in order to flowing of control lapping liquid.In one embodiment, when control valve 280a opens, control valve 230a is a closed condition, this moment, chemical liquids was except being supplied to grinding pad adjuster 250 from chemical liquids feeding pipe 260, self-grind pad 220 tops are transferred to outside the grinding pad 220, chemical liquids also can be supplied with groove 270 in regular turn through distribution pipeline 280, control valve 280a, polishing liquid feeding pipe 230 and lapping liquid outlet 212 from chemical liquids, and self-grind pad 220 belows arrive on the grinding pad 220, to carry out the action that grinding pad 220 is regulated.
Otherwise when control valve 280a closes, and control valve 230a is when opening, and lapping liquid can be supplied with groove 240 from lapping liquid and arrive on the grinding pad 220 with lapping liquid outlet 212 through polishing liquid feeding pipes 230, to carry out the action of subsequent chemistry mechanical lapping.
The chemical mechanical polishing device 200 of present embodiment, because of adopting the design of distribution pipeline 280, so but the top of self-grind pad 220 and below transmitted in both directions chemical liquids to grinding pad 220.Wherein self-grind pad 220 belows provide in the process of chemical liquids, and chemical liquids is solvable removes the polishing particles that is blocked in lapping liquid outlet 212, and then makes that in follow-up grinding technics lapping liquid can be evenly distributed on the grinding pad 220, to promote grinding effect.
Please continue with reference to Fig. 2 so that the control method of grinding pad 220 of the present invention to be described, the control method of this grinding pad 220 is applicable to above-mentioned chemical mechanical polishing device 200.
This control method is after grinding with the layer to be ground (not illustrating) on 200 pairs one wafers of chemical mechanical polishing device (not illustrating), chemical liquids is supplied to grinding pad adjuster 250 via chemical liquids feeding pipe 260, simultaneously chemical liquids is supplied on the grinding pad 220 via distribution pipeline 280, polishing liquid feeding pipe 230, and uses grinding pad adjuster 250 to regulate grinding pad 220 surfaces.Please refer to Fig. 2, the control method of the grinding pad 220 of present embodiment for example comprises the following steps.
At first, chemical liquids is supplied with groove 270 from chemical liquids transfer to grinding pad adjuster 250 via chemical liquids feeding pipe 260, self-grind pad 220 tops transfer on the grinding pad 220 again.In this simultaneously, control valve 280a is an opening, and control valve 230a is a closed condition, so chemical liquids can be again via distribution pipeline 280, polishing liquid feeding pipe 230 and lapping liquid outlet 212, self-grind pad 220 belows are transferred on the grinding pad 220, and because control valve 230a is a closed condition, so lapping liquid can't be transferred on the grinding pad 220 in the self-grind liquid feeding pipe 230.
Afterwards, continue to use grinding pad adjuster 250 to regulate grinding pad 220 surfaces, grinding pad adjuster 250 for example has many diamond brushes, can contact the surface of grinding pad 220, cooperate self-grind pad 220 tops and below to transfer to chemical liquids on the grinding pad 220 again, and then will be attached to the lapping liquid residue on grinding pad 220 surfaces and the fine hair of grinding pad 220 surface irregularities removes.As make one, can make grinding pad 220 maintain suitable roughness (roughness), and make grinding pad 220 in follow-up chemical mechanical milling tech, can adsorb enough lapping liquids, to keep higher, more stable grinding rate (polishing rate).
Please continue with reference to Fig. 2, in above-mentioned regulating step, particularly but chemical liquids self-grind pad 220 belows transfer to the design on the grinding pad 220, make chemical liquids to export 212 lapping liquid residue generation chemical reaction, be beneficial to remove the lapping liquid residue that is blocked in lapping liquid outlet 212 with being blocked in lapping liquid.In other words, lapping liquid outlet 212 can keep unimpeded, and then lapping liquid can be evenly distributed on the grinding pad 220, and promotes the grinding usefulness of overall chemical mechanical lapping equipment 200, also has the effect in the service life that prolongs abrasive disk 210 simultaneously.
In addition, above-mentioned layer to be ground for example is a metal level, and in a preferred embodiment, when metal level for example is the copper metal, its corresponding lapping liquid that uses for example is acid solution, and the chemical liquids of using for example is acid solution, and this chemical liquids can be to contain oxalic acid solution.In another embodiment, when above-mentioned metal level for example was tungsten, its corresponding employed lapping liquid was an acid solution for example, and the chemical liquids of using for example is deionized water.In addition, in another embodiment, when metal level for example was tantalum nitride, its corresponding employed lapping liquid was an alkaline solution for example, and the chemical liquids of using for example is deionized water.
In sum, chemical mechanical polishing device of the present invention and its grinding pad control method have following advantage:
(1) chemical mechanical polishing device of the present invention has the design of distribution pipeline, when grinding pad is regulated, chemical liquids can be blocked in the lapping liquid residue of lapping liquid outlet with removal by the lapping liquid outlet, and then provides follow-up grinding technics good grinding effect.
(2) but chemical mechanical polishing device transmitted in both directions chemical liquids of the present invention, when grinding pad is regulated, to obtain preferred regulating effect.
(3) chemical machine of the present invention is a lapping device, more can not stop up because lapping liquid exports, so abrasive disk will have long service life.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (16)
1, a kind of chemical mechanical polishing device comprises at least:
One abrasive disk wherein has a plurality of lapping liquid outlets on this abrasive disk surface;
One grinding pad is disposed on this abrasive disk;
One polishing liquid feeding pipe is connected in this abrasive disk bottom, is suitable for supplying with a lapping liquid to this grinding pad surface from this abrasive disk below via those lapping liquid outlets;
One grinding pad adjuster is disposed at this grinding pad top;
One chemical liquids feeding pipe is connected in this grinding pad adjuster, is suitable for supplying with a chemical liquids to this grinding pad adjuster; And
One distribution pipeline is connected between this polishing liquid feeding pipe and this chemical liquids feeding pipe, is suitable for making this chemical liquids to be supplied on this grinding pad surface via this chemical liquids feeding pipe, this polishing liquid feeding pipe and the outlet of those lapping liquids.
2, chemical mechanical polishing device as claimed in claim 1 wherein also is provided with one first control valve on this distribution pipeline, and one second control valve also is set on this polishing liquid feeding pipe.
3, chemical mechanical polishing device as claimed in claim 2, wherein when supplying this lapping liquid to this grinding pad, this first control valve is closed, and this second control valve is opened.
4, chemical mechanical polishing device as claimed in claim 2, wherein when supplying this chemical liquids to this grinding pad, this first control valve is opened, and this second control valve is closed.
5, a kind of control method of grinding pad, be applicable to the described chemical mechanical polishing device of claim 1, and the control method of this grinding pad is after with this chemical mechanical polishing device the layer to be ground on one wafer being ground, this chemical liquids is supplied to this grinding pad adjuster via this chemical liquids feeding pipe, simultaneously this chemical liquids is supplied on this grinding pad via this distribution pipeline, this polishing liquid feeding pipe, and uses this grinding pad adjuster to regulate this grinding pad surface.
6, the control method of grinding pad as claimed in claim 5, wherein this layer to be ground comprises metal level.
7, the control method of grinding pad as claimed in claim 6, wherein this metal level comprises copper.
8, the control method of grinding pad as claimed in claim 7, wherein this lapping liquid comprises acid solution.
9, the control method of grinding pad as claimed in claim 7, wherein this chemical liquids comprises acid solution.
10, the control method of grinding pad as claimed in claim 9, wherein this chemical liquids comprises and contains oxalic acid solution.
11, the control method of grinding pad as claimed in claim 6, wherein this metal level comprises tungsten.
12, the control method of grinding pad as claimed in claim 11, wherein this lapping liquid comprises acid solution.
13, the control method of grinding pad as claimed in claim 11, wherein this chemical liquids comprises deionized water.
14, the control method of grinding pad as claimed in claim 6, wherein this metal level comprises tantalum nitride.
15, the control method of grinding pad as claimed in claim 14, wherein this lapping liquid comprises alkaline solution.
16, the control method of grinding pad as claimed in claim 14, wherein this chemical liquids comprises deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101038647A CN100526017C (en) | 2005-09-16 | 2005-09-16 | Chemomechanical grinder and its grinding pad regulating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101038647A CN100526017C (en) | 2005-09-16 | 2005-09-16 | Chemomechanical grinder and its grinding pad regulating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1931523A true CN1931523A (en) | 2007-03-21 |
| CN100526017C CN100526017C (en) | 2009-08-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101038647A Active CN100526017C (en) | 2005-09-16 | 2005-09-16 | Chemomechanical grinder and its grinding pad regulating method |
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| CN (1) | CN100526017C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102380818A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Chemical mechanical grinding method and chemical mechanical grinding equipment |
| CN103079767A (en) * | 2010-08-18 | 2013-05-01 | Lg化学株式会社 | Polishing pad for a polishing system |
| CN108247528A (en) * | 2016-12-29 | 2018-07-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of processing method of grinding pad |
| CN112264928A (en) * | 2020-10-23 | 2021-01-26 | 长江存储科技有限责任公司 | Chemical mechanical polishing equipment |
-
2005
- 2005-09-16 CN CNB2005101038647A patent/CN100526017C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103079767A (en) * | 2010-08-18 | 2013-05-01 | Lg化学株式会社 | Polishing pad for a polishing system |
| CN102380818A (en) * | 2010-09-01 | 2012-03-21 | 无锡华润上华半导体有限公司 | Chemical mechanical grinding method and chemical mechanical grinding equipment |
| CN108247528A (en) * | 2016-12-29 | 2018-07-06 | 中芯国际集成电路制造(上海)有限公司 | A kind of processing method of grinding pad |
| CN112264928A (en) * | 2020-10-23 | 2021-01-26 | 长江存储科技有限责任公司 | Chemical mechanical polishing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100526017C (en) | 2009-08-12 |
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