CN1925318A - 高频功率放大器 - Google Patents
高频功率放大器 Download PDFInfo
- Publication number
- CN1925318A CN1925318A CNA2006101062994A CN200610106299A CN1925318A CN 1925318 A CN1925318 A CN 1925318A CN A2006101062994 A CNA2006101062994 A CN A2006101062994A CN 200610106299 A CN200610106299 A CN 200610106299A CN 1925318 A CN1925318 A CN 1925318A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- circuit
- voltage
- power amplifier
- frequency power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000087 stabilizing effect Effects 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 12
- 230000000630 rising effect Effects 0.000 abstract 4
- 230000000694 effects Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
- H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
- H03G3/3047—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers for intermittent signals, e.g. burst signals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005251117A JP2007067820A (ja) | 2005-08-31 | 2005-08-31 | 高周波電力増幅器 |
JP251117/2005 | 2005-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1925318A true CN1925318A (zh) | 2007-03-07 |
CN100525082C CN100525082C (zh) | 2009-08-05 |
Family
ID=37803265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101062994A Expired - Fee Related CN100525082C (zh) | 2005-08-31 | 2006-07-19 | 高频功率放大器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7368988B2 (zh) |
JP (1) | JP2007067820A (zh) |
CN (1) | CN100525082C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101807890B (zh) * | 2009-02-03 | 2013-02-13 | 瑞萨电子株式会社 | Rf功率放大电路和使用该电路的rf功率模块 |
CN103138690A (zh) * | 2012-12-17 | 2013-06-05 | 广州慧智微电子有限公司 | 一种射频功率放大器中通过偏置电流进行功率补偿的电路 |
CN104135273A (zh) * | 2014-07-28 | 2014-11-05 | 中国电子科技集团公司第二十四研究所 | 线性度大于96dB的BiCMOS缓冲器 |
CN104426489A (zh) * | 2013-09-11 | 2015-03-18 | 三菱电机株式会社 | 功率放大器 |
CN106788295A (zh) * | 2017-01-06 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | 一种多级放大器 |
CN115913147A (zh) * | 2022-12-19 | 2023-04-04 | 锐石创芯(深圳)科技股份有限公司 | 一种功率放大器电路、装置及射频前端模组 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5165610B2 (ja) * | 2009-02-03 | 2013-03-21 | ルネサスエレクトロニクス株式会社 | Rf電力増幅回路 |
US9246443B2 (en) * | 2013-11-26 | 2016-01-26 | Skyworks Solutions, Inc | Multi-mode power amplifier |
JP2018195954A (ja) * | 2017-05-16 | 2018-12-06 | 株式会社村田製作所 | 電力増幅回路 |
TWI639299B (zh) * | 2017-08-02 | 2018-10-21 | 立積電子股份有限公司 | 電流補償電路 |
US10411661B1 (en) * | 2018-06-01 | 2019-09-10 | Beijing Huntersun Electronic Co., Ltd. | Apparatus, system and method for power amplifier control |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000332542A (ja) | 1999-05-20 | 2000-11-30 | Mitsubishi Electric Corp | 多段電力増幅器のバイアス回路及びそのバイアス供給方法 |
US6701138B2 (en) * | 2001-06-11 | 2004-03-02 | Rf Micro Devices, Inc. | Power amplifier control |
JP2003037454A (ja) * | 2001-07-23 | 2003-02-07 | Hitachi Ltd | 高周波電力増幅回路 |
JP3972110B2 (ja) | 2002-07-02 | 2007-09-05 | 株式会社ケンウッド | 無線機の送信回路 |
JP2005101734A (ja) * | 2003-09-22 | 2005-04-14 | Toshiba Corp | 高出力増幅回路 |
-
2005
- 2005-08-31 JP JP2005251117A patent/JP2007067820A/ja active Pending
-
2006
- 2006-07-19 CN CNB2006101062994A patent/CN100525082C/zh not_active Expired - Fee Related
- 2006-07-20 US US11/489,609 patent/US7368988B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101807890B (zh) * | 2009-02-03 | 2013-02-13 | 瑞萨电子株式会社 | Rf功率放大电路和使用该电路的rf功率模块 |
CN102820856B (zh) * | 2009-02-03 | 2015-02-25 | 瑞萨电子株式会社 | Rf功率放大电路和使用该电路的rf功率模块 |
CN103138690A (zh) * | 2012-12-17 | 2013-06-05 | 广州慧智微电子有限公司 | 一种射频功率放大器中通过偏置电流进行功率补偿的电路 |
CN103138690B (zh) * | 2012-12-17 | 2016-06-08 | 广州慧智微电子有限公司 | 一种射频功率放大器中通过偏置电流进行功率补偿的电路 |
CN104426489A (zh) * | 2013-09-11 | 2015-03-18 | 三菱电机株式会社 | 功率放大器 |
CN104426489B (zh) * | 2013-09-11 | 2017-11-14 | 株式会社村田制作所 | 功率放大器 |
CN104135273A (zh) * | 2014-07-28 | 2014-11-05 | 中国电子科技集团公司第二十四研究所 | 线性度大于96dB的BiCMOS缓冲器 |
CN106788295A (zh) * | 2017-01-06 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | 一种多级放大器 |
CN106788295B (zh) * | 2017-01-06 | 2019-04-19 | 上海华虹宏力半导体制造有限公司 | 一种多级放大器 |
CN115913147A (zh) * | 2022-12-19 | 2023-04-04 | 锐石创芯(深圳)科技股份有限公司 | 一种功率放大器电路、装置及射频前端模组 |
Also Published As
Publication number | Publication date |
---|---|
US20070046370A1 (en) | 2007-03-01 |
US7368988B2 (en) | 2008-05-06 |
CN100525082C (zh) | 2009-08-05 |
JP2007067820A (ja) | 2007-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1925318A (zh) | 高频功率放大器 | |
KR102296096B1 (ko) | 가변 부스팅된 서플라이 전압을 갖는 엔벨로프 트래커 | |
CN100483288C (zh) | 用于高功率放大器的静态电流控制电路 | |
US6753734B2 (en) | Multi-mode amplifier bias circuit | |
CN1371545A (zh) | 高效调制射频放大器 | |
CN1485981A (zh) | 用于通信中的可变增益放大器 | |
JP2005502251A (ja) | Rf電力増幅器用のスイッチング電源 | |
US9148097B2 (en) | Electronic system—radio frequency power amplifier and method for dynamic adjusting bias point | |
JP2006303744A (ja) | 高周波電力増幅装置 | |
CN1729637A (zh) | 发射机以及对发射机输出的信号的功率进行校准的方法 | |
US8390379B2 (en) | Amplifier input stage and slew boost circuit | |
JP2020072468A (ja) | 電力増幅モジュール | |
US9917549B1 (en) | Dynamically configurable bias circuit for controlling gain expansion of multi-mode single chain linear power amplifiers | |
US9024689B2 (en) | Electronic system—radio frequency power amplifier and method for self-adjusting bias point | |
CN1234649A (zh) | 可变增益放大器电路 | |
CN1813402A (zh) | 集成功率放大器电路 | |
CN1806386A (zh) | 输出功率检测电路 | |
WO2011160330A1 (zh) | 跟踪电源装置及其控制方法 | |
US11205999B2 (en) | Amplifier with signal dependent mode operation | |
TWI572134B (zh) | 放大模組的功率控制方法 | |
CN116783820A (zh) | 混合可配置rf功率放大器 | |
JP2021078020A (ja) | 電力増幅モジュール | |
Kim et al. | Efficiency enhanced CMOS digitally controlled dynamic bias switching power amplifier for LTE | |
US20030169112A1 (en) | Variable gain amplifier with low power consumption | |
Kim et al. | Wideband envelope amplifier for envelope-tracking operation of handset power amplifier |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: RENESAS TECHNOLOGY CORP. Effective date: 20101019 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TOKYO TO, JAPAN TO: KANAGAWA PREFECTURE, JAPAN |
|
TR01 | Transfer of patent right |
Effective date of registration: 20101019 Address after: Kanagawa Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan, Japan Patentee before: Renesas Technology Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090805 Termination date: 20140719 |
|
EXPY | Termination of patent right or utility model |