CN1371545A - 高效调制射频放大器 - Google Patents
高效调制射频放大器 Download PDFInfo
- Publication number
- CN1371545A CN1371545A CN00812058A CN00812058A CN1371545A CN 1371545 A CN1371545 A CN 1371545A CN 00812058 A CN00812058 A CN 00812058A CN 00812058 A CN00812058 A CN 00812058A CN 1371545 A CN1371545 A CN 1371545A
- Authority
- CN
- China
- Prior art keywords
- signal
- amplifier
- control
- power
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004044 response Effects 0.000 claims abstract description 11
- 230000005284 excitation Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 12
- 238000005086 pumping Methods 0.000 claims description 8
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- IXORZMNAPKEEDV-OBDJNFEBSA-N gibberellin A3 Chemical compound C([C@@]1(O)C(=C)C[C@@]2(C1)[C@H]1C(O)=O)C[C@H]2[C@]2(C=C[C@@H]3O)[C@H]1[C@]3(C)C(=O)O2 IXORZMNAPKEEDV-OBDJNFEBSA-N 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 16
- 230000008859 change Effects 0.000 description 13
- 238000013461 design Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 6
- 230000001413 cellular effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
- H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0244—Stepped control
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/004—Control by varying the supply voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3215—To increase the output power or efficiency
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
电容 | pf | 电感 | nh | 电压 | V |
C1 | 27 | L1 | 8.2 | Vd1 | 3.3 |
C2 | 10 | L2 | 33 | Vd2 | 3.2 |
C3 | 0.01 | L3 | 33 | Vg1 | -1.53 |
C4 | 27 | L4 | 4.7 | Vg2 | -1.27 |
C5 | 27 | L5 | NA | ||
C6 | 27 | L6 | 39 | ||
C7 | NA | L7 | 15 | ||
C8 | 27 | L8 | 2.7 | ||
C9 | 0.01 | ||||
C10 | 27 | ||||
C11 | 1.5 | ||||
C12 | 5.6 |
Claims (21)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/362,880 | 1999-07-29 | ||
US09/362,880 US6198347B1 (en) | 1999-07-29 | 1999-07-29 | Driving circuits for switch mode RF power amplifiers |
US09/564,548 US7265618B1 (en) | 2000-05-04 | 2000-05-04 | RF power amplifier having high power-added efficiency |
US09/564,548 | 2000-05-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1371545A true CN1371545A (zh) | 2002-09-25 |
CN1249912C CN1249912C (zh) | 2006-04-05 |
Family
ID=27001827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008120587A Expired - Lifetime CN1249912C (zh) | 1999-07-29 | 2000-07-31 | 高效调制射频放大器 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1201024A1 (zh) |
JP (1) | JP2003506941A (zh) |
KR (1) | KR20020059343A (zh) |
CN (1) | CN1249912C (zh) |
AU (1) | AU6615700A (zh) |
WO (1) | WO2001010013A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101110595B (zh) * | 2006-07-21 | 2010-06-09 | 联发科技股份有限公司 | 多级linc发射器 |
CN102843108A (zh) * | 2012-09-21 | 2012-12-26 | 中国科学院上海微系统与信息技术研究所 | 一种高效线性化射频功率放大装置及方法 |
CN1832312B (zh) * | 2005-03-09 | 2013-11-20 | 英特尔移动通信有限责任公司 | 电压控制电路和用于供给电气元件供电电压的方法 |
CN105703716A (zh) * | 2014-12-12 | 2016-06-22 | 英特尔公司 | 与一个或多个频带内的同时发送有关的包络跟踪 |
CN114467261A (zh) * | 2019-08-13 | 2022-05-10 | 艾尔丹通信设备公司 | 具有宽带乘积模式控制的极化调制发射机 |
WO2022116741A1 (zh) * | 2020-12-01 | 2022-06-09 | 锐石创芯(深圳)科技股份有限公司 | 级间匹配电路和推挽功率放大电路 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0115082D0 (en) * | 2001-06-20 | 2001-08-15 | Nokia Networks Oy | Power control for non-constant envelope modulation |
DE60134005D1 (de) * | 2001-07-13 | 2008-06-26 | Ttp Communications Ltd | Sender Leistungsverstärkersteuerung |
US6819941B2 (en) * | 2001-10-11 | 2004-11-16 | Rf Micro Devices, Inc. | Single output stage power amplification for multimode applications |
US6624712B1 (en) | 2002-06-11 | 2003-09-23 | Motorola, Inc. | Method and apparatus for power modulating to prevent instances of clipping |
US6624711B1 (en) | 2002-06-11 | 2003-09-23 | Motorola, Inc. | Method and apparatus for power modulating to prevent instances of clipping |
US7545865B2 (en) | 2002-12-03 | 2009-06-09 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for wideband signal processing |
US7298854B2 (en) | 2002-12-04 | 2007-11-20 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for noise reduction in electromagnetic signal processing |
US6891432B2 (en) | 2002-11-14 | 2005-05-10 | Mia-Com, Inc. | Apparatus, methods and articles of manufacture for electromagnetic processing |
US6924699B2 (en) | 2003-03-06 | 2005-08-02 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for digital modification in electromagnetic signal processing |
US7526260B2 (en) | 2002-11-14 | 2009-04-28 | M/A-Com Eurotec, B.V. | Apparatus, methods and articles of manufacture for linear signal modification |
US7203262B2 (en) | 2003-05-13 | 2007-04-10 | M/A-Com, Inc. | Methods and apparatus for signal modification in a fractional-N phase locked loop system |
US7245183B2 (en) | 2002-11-14 | 2007-07-17 | M/A-Com Eurotec Bv | Apparatus, methods and articles of manufacture for processing an electromagnetic wave |
US7187231B2 (en) | 2002-12-02 | 2007-03-06 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for multiband signal processing |
JP2004200130A (ja) * | 2002-12-20 | 2004-07-15 | Ulvac Japan Ltd | 四重極質量分析計の電圧制御方法及び電圧制御回路装置 |
US6801082B2 (en) | 2002-12-31 | 2004-10-05 | Motorola, Inc. | Power amplifier circuit and method using bandlimited signal component estimates |
US6859098B2 (en) | 2003-01-17 | 2005-02-22 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for control in an electromagnetic processor |
WO2005027297A2 (en) * | 2003-09-16 | 2005-03-24 | Nokia Corporation | Hybrid switched mode/linear power amplifier power supply for use in polar transmitter |
KR100728086B1 (ko) * | 2003-09-16 | 2007-06-14 | 한국과학기술연구원 | 진공관과 반도체 스위칭 소자의 cascode 방식회로를 이용한 대출력 펄스 RF 전력 발생 장치 |
US7343138B2 (en) | 2003-12-08 | 2008-03-11 | M/A-Com, Inc. | Compensating for load pull in electromagentic signal propagation using adaptive impedance matching |
KR100656333B1 (ko) * | 2005-04-27 | 2006-12-13 | 한국과학기술원 | 자동 스위칭 기능을 갖는 전력증폭기 |
US7199658B2 (en) * | 2005-05-18 | 2007-04-03 | International Business Machines Corporation | Circuits and methods for implementing power amplifiers for millimeter wave applications |
EP1881611B1 (en) * | 2005-06-30 | 2019-01-16 | Panasonic Intellectual Property Management Co., Ltd. | Transmission circuit and communication device |
GB2432982A (en) * | 2005-11-30 | 2007-06-06 | Toshiba Res Europ Ltd | An EER RF amplifier with PWM signal switching |
JP2007180644A (ja) * | 2005-12-27 | 2007-07-12 | Sharp Corp | スイッチング増幅器 |
US7920029B2 (en) | 2006-02-10 | 2011-04-05 | Nxp B.V. | Power amplifier |
US8830710B2 (en) | 2012-06-25 | 2014-09-09 | Eta Devices, Inc. | RF energy recovery system |
CN104052409B (zh) * | 2013-03-15 | 2018-01-19 | 美国亚德诺半导体公司 | 全数字零电压切换 |
EP2779443B1 (en) * | 2013-03-15 | 2017-07-19 | Analog Devices, Inc. | All digital zero-voltage switching |
US9281788B2 (en) | 2013-03-15 | 2016-03-08 | Analog Devices, Inc. | All digital zero-voltage switching |
US10056924B2 (en) | 2013-08-19 | 2018-08-21 | Analog Devices, Inc. | High output power digital-to-analog converter system |
US8970418B1 (en) | 2013-08-19 | 2015-03-03 | Analog Devices, Inc. | High output power digital-to-analog converter system |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3919656A (en) * | 1973-04-23 | 1975-11-11 | Nathan O Sokal | High-efficiency tuned switching power amplifier |
US4831334A (en) * | 1987-06-08 | 1989-05-16 | Hughes Aircraft Company | Envelope amplifier |
FR2768574A1 (fr) * | 1997-09-15 | 1999-03-19 | Motorola Semiconducteurs | Circuit et procede d'amplification de puissance |
-
2000
- 2000-07-31 EP EP00953760A patent/EP1201024A1/en not_active Withdrawn
- 2000-07-31 WO PCT/US2000/020841 patent/WO2001010013A1/en not_active Application Discontinuation
- 2000-07-31 CN CNB008120587A patent/CN1249912C/zh not_active Expired - Lifetime
- 2000-07-31 JP JP2001514531A patent/JP2003506941A/ja active Pending
- 2000-07-31 AU AU66157/00A patent/AU6615700A/en not_active Abandoned
- 2000-07-31 KR KR1020027001158A patent/KR20020059343A/ko not_active Application Discontinuation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1832312B (zh) * | 2005-03-09 | 2013-11-20 | 英特尔移动通信有限责任公司 | 电压控制电路和用于供给电气元件供电电压的方法 |
CN101110595B (zh) * | 2006-07-21 | 2010-06-09 | 联发科技股份有限公司 | 多级linc发射器 |
CN102843108A (zh) * | 2012-09-21 | 2012-12-26 | 中国科学院上海微系统与信息技术研究所 | 一种高效线性化射频功率放大装置及方法 |
CN102843108B (zh) * | 2012-09-21 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | 一种高效线性化射频功率放大装置及方法 |
CN105703716A (zh) * | 2014-12-12 | 2016-06-22 | 英特尔公司 | 与一个或多个频带内的同时发送有关的包络跟踪 |
CN105703716B (zh) * | 2014-12-12 | 2019-07-26 | 英特尔公司 | 与一个或多个频带内的同时发送有关的包络跟踪 |
CN114467261A (zh) * | 2019-08-13 | 2022-05-10 | 艾尔丹通信设备公司 | 具有宽带乘积模式控制的极化调制发射机 |
CN114467261B (zh) * | 2019-08-13 | 2023-03-31 | 艾尔丹通信设备公司 | 具有宽带乘积模式控制的极化调制发射机 |
WO2022116741A1 (zh) * | 2020-12-01 | 2022-06-09 | 锐石创芯(深圳)科技股份有限公司 | 级间匹配电路和推挽功率放大电路 |
Also Published As
Publication number | Publication date |
---|---|
WO2001010013A9 (en) | 2002-09-06 |
CN1249912C (zh) | 2006-04-05 |
WO2001010013A1 (en) | 2001-02-08 |
JP2003506941A (ja) | 2003-02-18 |
AU6615700A (en) | 2001-02-19 |
EP1201024A1 (en) | 2002-05-02 |
KR20020059343A (ko) | 2002-07-12 |
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C14 | Grant of patent or utility model | ||
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Owner name: PANASONIC ELECTRIC EQUIPMENT INDUSTRIAL CO.,LTD. Free format text: FORMER OWNER: TROPIAN, INC. Effective date: 20070209 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20070209 Address after: Osaka Japan Patentee after: Matsushita Electric Industrial Co., Ltd. Address before: American California Patentee before: Tropian, Inc. |
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Effective date of registration: 20160607 Address after: American California Patentee after: Intel Corporation Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co., Ltd. |
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