CN1916764B - 顶部抗反射涂料聚合物、制法及顶部抗反射涂料组合物 - Google Patents
顶部抗反射涂料聚合物、制法及顶部抗反射涂料组合物 Download PDFInfo
- Publication number
- CN1916764B CN1916764B CN2005100919515A CN200510091951A CN1916764B CN 1916764 B CN1916764 B CN 1916764B CN 2005100919515 A CN2005100919515 A CN 2005100919515A CN 200510091951 A CN200510091951 A CN 200510091951A CN 1916764 B CN1916764 B CN 1916764B
- Authority
- CN
- China
- Prior art keywords
- reflective coating
- composition
- top anti
- methacrylic acid
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000006117 anti-reflective coating Substances 0.000 title claims description 80
- 239000000203 mixture Substances 0.000 title claims description 62
- 229920001688 coating polymer Polymers 0.000 title claims description 37
- 238000002360 preparation method Methods 0.000 title description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 38
- 239000000178 monomer Substances 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 44
- 238000000576 coating method Methods 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 40
- 239000002253 acid Substances 0.000 claims description 27
- 230000014509 gene expression Effects 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 18
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 12
- 239000003960 organic solvent Substances 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 239000003112 inhibitor Substances 0.000 claims description 6
- 239000003505 polymerization initiator Substances 0.000 claims description 6
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000010526 radical polymerization reaction Methods 0.000 claims description 5
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 4
- 229930182821 L-proline Natural products 0.000 claims description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- ZQMIGQNCOMNODD-UHFFFAOYSA-N diacetyl peroxide Chemical compound CC(=O)OOC(C)=O ZQMIGQNCOMNODD-UHFFFAOYSA-N 0.000 claims description 4
- YFSUTJLHUFNCNZ-UHFFFAOYSA-N perfluorooctane-1-sulfonic acid Chemical class OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-N 0.000 claims description 4
- 229960002429 proline Drugs 0.000 claims description 4
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 claims description 4
- 239000012953 triphenylsulfonium Substances 0.000 claims description 4
- VLSRKCIBHNJFHA-UHFFFAOYSA-N 2-(trifluoromethyl)prop-2-enoic acid Chemical compound OC(=O)C(=C)C(F)(F)F VLSRKCIBHNJFHA-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- LGJCFVYMIJLQJO-UHFFFAOYSA-N 1-dodecylperoxydodecane Chemical compound CCCCCCCCCCCCOOCCCCCCCCCCCC LGJCFVYMIJLQJO-UHFFFAOYSA-N 0.000 claims description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 2
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 claims description 2
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 claims description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 238000000671 immersion lithography Methods 0.000 abstract description 17
- 229910052731 fluorine Inorganic materials 0.000 abstract description 8
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000011737 fluorine Chemical group 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- ZRNSSRODJSSVEJ-UHFFFAOYSA-N 2-methylpentacosane Chemical group CCCCCCCCCCCCCCCCCCCCCCCC(C)C ZRNSSRODJSSVEJ-UHFFFAOYSA-N 0.000 abstract description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical group FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract description 4
- 125000001153 fluoro group Chemical group F* 0.000 abstract description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 abstract description 4
- 150000002430 hydrocarbons Chemical class 0.000 abstract 2
- 239000002861 polymer material Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002431 hydrogen Chemical group 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 16
- 239000000839 emulsion Substances 0.000 description 10
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- SSDIHNAZJDCUQV-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonate;triphenylsulfanium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F SSDIHNAZJDCUQV-UHFFFAOYSA-M 0.000 description 1
- -1 2,2,3,4,4,4-hexafluoro butyl Chemical group 0.000 description 1
- 102100023698 C-C motif chemokine 17 Human genes 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 101000978362 Homo sapiens C-C motif chemokine 17 Proteins 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/32—Radiation-absorbing paints
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040100527A KR100676885B1 (ko) | 2004-12-02 | 2004-12-02 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
| KR100527/04 | 2004-12-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1916764A CN1916764A (zh) | 2007-02-21 |
| CN1916764B true CN1916764B (zh) | 2010-08-04 |
Family
ID=36441834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005100919515A Expired - Fee Related CN1916764B (zh) | 2004-12-02 | 2005-08-15 | 顶部抗反射涂料聚合物、制法及顶部抗反射涂料组合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7462439B2 (enExample) |
| JP (1) | JP4662819B2 (enExample) |
| KR (1) | KR100676885B1 (enExample) |
| CN (1) | CN1916764B (enExample) |
| DE (1) | DE102005038087A1 (enExample) |
| IT (1) | ITTO20050459A1 (enExample) |
| TW (1) | TWI303252B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4322205B2 (ja) | 2004-12-27 | 2009-08-26 | 東京応化工業株式会社 | レジスト保護膜形成用材料およびこれを用いたレジストパターン形成方法 |
| JP5084216B2 (ja) * | 2005-10-03 | 2012-11-28 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | フォトリソグラフィーのための組成物および方法 |
| JP2007206229A (ja) * | 2006-01-31 | 2007-08-16 | Renesas Technology Corp | レジストパターン形成方法および半導体装置の製造方法 |
| KR100876783B1 (ko) * | 2007-01-05 | 2009-01-09 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
| CZ18426U1 (cs) * | 2008-02-15 | 2008-04-07 | Linet, Spol. S R.O. | Polohovací mechanizmus lužka |
| JP2013061648A (ja) * | 2011-09-09 | 2013-04-04 | Rohm & Haas Electronic Materials Llc | フォトレジスト上塗り組成物および電子デバイスを形成する方法 |
| KR102487552B1 (ko) | 2018-02-05 | 2023-01-11 | 삼성전자주식회사 | 보호막 조성물 및 이를 이용한 반도체 패키지 제조 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1121190A (zh) * | 1994-06-22 | 1996-04-24 | 希巴-盖吉股份公司 | 正性光刻胶 |
| US5905016A (en) * | 1997-03-05 | 1999-05-18 | Mitsubishi Denki Kabushiki Kaisha | Resist pattern forming method and resist material |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1965587A1 (de) * | 1969-12-30 | 1971-07-15 | Basf Ag | Verfahren zum Herstellen reversibel wasserdampfaufnehmender flaechiger Gebilde |
| US4346235A (en) | 1979-06-15 | 1982-08-24 | Okamura Oil Mill Limited | Fluorine-containing compounds |
| JPS574941A (en) | 1980-06-10 | 1982-01-11 | Okamura Seiyu Kk | Fluorine-containing corboxylic acid and its ester |
| JPH02974A (ja) * | 1988-02-26 | 1990-01-05 | Daikin Ind Ltd | レジスト材料 |
| JPH03226756A (ja) * | 1990-01-31 | 1991-10-07 | Daikin Ind Ltd | レジスト、その製造方法およびそれを用いるレジストパターンの形成方法 |
| JP2648804B2 (ja) * | 1990-04-24 | 1997-09-03 | インターナショナル・ビジネス・マシーンズ・コーポレイション | ドライフィルム型の水性処理可能なホトレジスト組成物 |
| JPH04142542A (ja) * | 1990-10-03 | 1992-05-15 | Daikin Ind Ltd | レジスト、その製造方法およびそれを用いるレジストパターンの形成方法 |
| DE4102340A1 (de) * | 1991-01-26 | 1992-07-30 | Bayer Ag | Lichtleitfasern und verfahren zu ihrer herstellung |
| JP2643056B2 (ja) | 1991-06-28 | 1997-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 表面反射防止コーティング形成組成物及びその使用 |
| EP0537524A1 (en) * | 1991-10-17 | 1993-04-21 | Shipley Company Inc. | Radiation sensitive compositions and methods |
| US5879853A (en) | 1996-01-18 | 1999-03-09 | Kabushiki Kaisha Toshiba | Top antireflective coating material and its process for DUV and VUV lithography systems |
| US6692887B1 (en) * | 1996-02-09 | 2004-02-17 | Jsr Corporation | Radiation-sensitive resin composition |
| US6214517B1 (en) * | 1997-02-17 | 2001-04-10 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
| US6274295B1 (en) | 1997-03-06 | 2001-08-14 | Clariant Finance (Bvi) Limited | Light-absorbing antireflective layers with improved performance due to refractive index optimization |
| US6048672A (en) | 1998-02-20 | 2000-04-11 | Shipley Company, L.L.C. | Photoresist compositions and methods and articles of manufacture comprising same |
| JP3672780B2 (ja) * | 1999-11-29 | 2005-07-20 | セントラル硝子株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
| US6783912B2 (en) | 2000-02-27 | 2004-08-31 | Shipley Company, L.L.C. | Photoacid generators and photoresists comprising same |
| US6844131B2 (en) * | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
| JP2003345026A (ja) | 2002-05-24 | 2003-12-03 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法 |
| US20030235775A1 (en) * | 2002-06-13 | 2003-12-25 | Munirathna Padmanaban | Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds |
| KR100574490B1 (ko) * | 2004-04-27 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
| KR100598176B1 (ko) * | 2004-07-06 | 2006-07-10 | 주식회사 하이닉스반도체 | 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물 |
-
2004
- 2004-12-02 KR KR1020040100527A patent/KR100676885B1/ko not_active Expired - Fee Related
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2005
- 2005-06-17 TW TW094120245A patent/TWI303252B/zh not_active IP Right Cessation
- 2005-06-23 JP JP2005183965A patent/JP4662819B2/ja not_active Expired - Fee Related
- 2005-06-23 US US11/159,735 patent/US7462439B2/en not_active Expired - Fee Related
- 2005-06-30 IT IT000459A patent/ITTO20050459A1/it unknown
- 2005-08-11 DE DE102005038087A patent/DE102005038087A1/de not_active Withdrawn
- 2005-08-15 CN CN2005100919515A patent/CN1916764B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1121190A (zh) * | 1994-06-22 | 1996-04-24 | 希巴-盖吉股份公司 | 正性光刻胶 |
| US5905016A (en) * | 1997-03-05 | 1999-05-18 | Mitsubishi Denki Kabushiki Kaisha | Resist pattern forming method and resist material |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4662819B2 (ja) | 2011-03-30 |
| KR20060061708A (ko) | 2006-06-08 |
| CN1916764A (zh) | 2007-02-21 |
| JP2006163345A (ja) | 2006-06-22 |
| KR100676885B1 (ko) | 2007-02-23 |
| TW200619231A (en) | 2006-06-16 |
| TWI303252B (en) | 2008-11-21 |
| US20070003861A1 (en) | 2007-01-04 |
| ITTO20050459A1 (it) | 2006-06-03 |
| US7462439B2 (en) | 2008-12-09 |
| DE102005038087A1 (de) | 2006-06-08 |
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