CN1915595A - Method for batch processing polishing fluid in situ for chemico-mechanical polishing metal, and equipment utilized - Google Patents
Method for batch processing polishing fluid in situ for chemico-mechanical polishing metal, and equipment utilized Download PDFInfo
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- CN1915595A CN1915595A CNA2006100305518A CN200610030551A CN1915595A CN 1915595 A CN1915595 A CN 1915595A CN A2006100305518 A CNA2006100305518 A CN A2006100305518A CN 200610030551 A CN200610030551 A CN 200610030551A CN 1915595 A CN1915595 A CN 1915595A
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Abstract
An in-situ treating method for the polishing liquid used for chemico-mechanical polishing (CMP) of metal features that based on the electrochemical principle, the metallic ions generated by polishing are removed by reducing transfer and the function of oxidant in polishing liquid is restored. Its apparatus features that the in-situ treating system of polishing liquid and the in-line repairing system of polishing disc are additionally used in the traditional polishing system.
Description
Technical Field
The invention relates to a polishing solution in-situ batch processing process and a polishing solution in-situ batch processing device for metal Chemical Mechanical Polishing (CMP) of an integrated circuit multilayer interconnection structure. More specifically, the invention relates to a process and a device for carrying out in-situ batch treatment on polishing solution, reducing the oxidation capability of the polishing solution by removing metal ions in the polishing solution, and further promoting the polishing solution to be fully and effectively used, so as to replace the existing one-time consumption process and device of the polishing solution, effectively reduce the material cost of a CMP process, and belongs to the technical field of microelectronic ultra-precision machining processes.
The invention relates to a method for reducing the consumption cost of a CMP process, which integrates a polishing process and polishing solution post-treatment into a one-step process through an in-situ batch processing device, firstly reduces and transfers metal ions generated by polishing to achieve the purpose of removing by utilizing the electrochemical working principle, and simultaneously recovers the function of an oxidant. The effectiveness of the polishing solution is judged by an online detection method, and fresh polishing solution is supplemented or replaced in time. And judging the removal condition and uniformity of the film by an online detection method. The polishing pad is repaired on line by combining a hairbrush on-line treatment means with micro-ultrasonic treatment, so that the effectiveness of the polishing pad is ensured, and the service life of the polishing pad is prolonged. Compared with the existing one-time consumption process of the polishing solution, the CMP in-situ batch processing process and the device not only can reduce the consumption cost of the polishing solution, but also can reduce the inconvenience caused by the post-treatment of the polishing solution, and are effective methods and equipment for solving the high cost of the chemical mechanical polishing process of the integrated circuit.
Background
With the development of high integration and feature size miniaturization of integrated circuits, high resolution exposure systems have placed extremely high demands on the flatness of semiconductor thin film materials, and especially with the application of multilayer interconnection materials, Chemical Mechanical Polishing (CMP) or chemical mechanical global planarization (CMP) has been developed as one of the critical processes of ICs. In the aluminum wiring era, a layout structure can be formed by etching, but with the influence of interconnection delay on the device speed, copper interconnection is becoming mainstream gradually, copper wiring cannot be formed by etching, a multilayer interconnection structure cannot be realized by adopting an embedded (also called Damascus) process, and the removal and planarization of corresponding redundant copper interconnection materials become a key process in the copper interconnection process (shown in FIG. 1). At present, 90 nm technology for copper interconnection has been developed to more than 8 layers, and chemical mechanical polishing is required for metal interconnection structure and film planarization of each layer. The polishing solution in the conventional chemical mechanical polishing system is disposable (as shown in fig. 2), and the consumption amount is large. The polishing field is concerned about two aspects aiming at the consumable problem: on the one hand, high-cost consumable consumption; another aspect is the environmental impact of waste treatment after CMP. The cost of consumables in the CMP process is about 60%, wherein the polishing solution is 40%, and the cost of polishing pads and other consumables is 20%, and the market research on CMP in 2005 shows that the consumables in CMP are about 11 hundred million dollars, and the polishing solution and the polishing pads account for the vast majority, about 10 million dollars. At least 600ml of polishing solution is usually needed for polishing each wafer, at least more than 6 times of metal CMP is needed for each wafer considering an IC factory producing 30000 wafers per month, the price of the CMP polishing solution for metal interconnection is generally 80-120 yuan/liter, and only one item of polishing solution needs to consume nearly 1.0 billion yuan of RMB every year in the production line. The large amount of consumption has attracted considerable attention from IC companies, and International Integrated Circuit manufacturing Limited, in 2004 at the IEDM conference, has indicated that copper interconnects, instead of aluminum wiring, have on average doubled or more per month consumable items (S.Yang, J.Chen, S.Chen, Customer Integrated Technologies for Innovative lead Edge Foundation Manual, 2004 IEDM: 673-. The consumption and post-treatment of the polishing solution during the CMP process have been noted in foreign countries, and patents US5664990 (slow recovery in CMP apparatus) and US5755614 (rice water recovery in CMP apparatus) disclose the dilution of the polishing solution after polishing and the removal of particles by filtration, which do not relate to the removal of soluble metal ions in the polishing solution. US5791970 (sizing system for chemical mechanical polishing apparatus) discloses a treatment method for recycling polishing solution by an end-point detection system, but fails to provide a method for removing soluble metal ions from polishing solution. Patent US6362103(method and apparatus for polishing a CMP chemical solution) discloses a device and a method for treating polishing solution, which uses electrochemical methods to remove metal ions in the polishing solution, but the method disclosed in the patent needs to add a large purification space outside the polishing machine for treating the polishing solution, and will increase the investment in equipment and purification plant space.
How to provide a process and a device which can fully utilize the effective components of the polishing solution, reduce the cost and save the space becomes the aim of the invention, and the invention provides a polishing solution in-situ batch processing process method and a device by considering the process condition of the existing IC factory and the existing polishing solution processing method.
Disclosure of Invention
In order to solve the problem of effective utilization of polishing solution, the invention provides a method for reducing the consumption cost of a CMP process, wherein a polishing process and post-treatment of the polishing solution are integrated into a one-step process through an in-situ batch processing device, and by utilizing the electrochemical working principle, metal ions generated by polishing are reduced and transferred to achieve the purpose of removing the metal ions and simultaneously recover the function of an oxidant. The effectiveness of the polishing solution is judged by an online detection method, and fresh polishing solution is supplemented or replaced in time. And judging the removal condition and uniformity of the film by an online detection method. The polishing pad is repaired on line by combining a hairbrush on-line treatment means with micro-ultrasonic treatment, so that the effectiveness of the polishing pad is ensured, and the service life of the polishing pad is prolonged. Compared with the existing one-time consumption process of the polishing solution, the CMP in-situ batch processing process and the device not only can reduce the consumption cost of the polishing solution, but also can reduce the inconvenience caused by the post-treatment of the polishing solution, and are an effective method and equipment for solving the high cost of the chemical mechanical polishing process of the integrated circuit (shown in figure 3).
It should be noted that the present invention is applicable to any kind of polishing machine, including single-head polishing machine, multi-head polishing machine, etc., and the polishing liquid in the polishing process is not limited as long as it can polish the material to be polished, but the material to be polished is limited to metal material, especially the metal ions generated in the polishing process remain in the polishing liquid.
The polishing solution in-situ batch processing method for metal Chemical Mechanical Polishing (CMP) of the integrated circuit multilayer interconnection structure comprises two stages: firstly, the CMP process of the metal interconnection material of the integrated circuit generates polishing solution containing metal ions of the polished material for treatment; and secondly, the polishing solution is treated and recovered through an online in-situ batch treatment process.
The invention provides a polishing solution in-situ batch processing process, wherein the removal process of soluble metal ions in the polishing solution is an electrochemical processing process for converting the metal ions into metal and depositing the metal ions at a specified position so as to achieve the purpose of removing the metal ions in the polishing solution, the optimal process is an electroplating process, a polishing system forms a circuit loop through an additional circuit, and the metal ions in the polishing solution are directionally deposited on the polishing system under the action of an electric fieldOn the cathode of the circuit loop, taking copper ions as an example, the reaction is as follows: other metal ions, e.g. Ta2+、Ru3+、Ti4+、Ag+、W4+、Al3+Etc. also have similar reactions.
In the polishing solution in-situ batch processing method provided by the invention, the recovery of the oxidation capacity of the polishing solution becomes necessary when the soluble metal ions in the polishing solution are removed and another important influencing factor in the metal polishing solution, and the recovery of the oxidation capacity can be realized by any one of the following two methods. Firstly, when constituting the circuit loop and getting rid of metal ion, the anodic oxidation reaction of circuit for the oxidizing power of polishing solution obtains reducing, if: . Another method is to continuously supplement the polishing solution with an oxidizing agent, wherein the commonly used oxidizing agent is hydrogen peroxide without metal ions, carbamide peroxide, ammonium persulfate and the like.
In the polishing solution in-situ batch processing technology provided by the invention, the soluble metal ions contained in the polishing solution for processing comprise one or a mixture of any two of copper, tungsten, aluminum, tantalum, ruthenium, titanium and silver.
The invention provides a polishing solution in-situ batch processing device (shown in figure 3), which is an adding and polishing solution in-situ batch processing system and a polishing pad on-line repairing system in a single-head or multi-head polishing machine. The polishing solution in-situ processing system is divided into a polishing solution electrochemical processing system and a polishing solution parameter online detection system which are connected with the polishing system, the polishing pad and the wafer are soaked in the polishing solution, metal ions of the polishing solution are removed and reduced through a circuit loop, the consistency of the polishing solution in the polishing process is kept as much as possible by using the polishing solution online detection technology, and the information of the polishing rate and the uniformity of the polishing process is displayed through the online detection system.
The invention provides a polishing solution in-situ batch processing device, wherein polishing solution is not discharged at one time, but a polishing pad and a wafer material are soaked in the polishing solution, a container for containing the polishing solution comprises at least two ports, one port is an inlet of the polishing solution, the other port is an outlet of polishing waste solution, and various additives, an inlet of deionized water for cleaning and the like are not excluded.
The invention provides a polishing solution in-situ batch processing device, wherein the method for online detecting the effectiveness of the polishing solution is one or any two of electrical, mechanical and optical film thickness testing means, and the stability of the polishing rate is judged by online detecting a polishing process signal (shown in figure 3). The use of the polishing solution has a certain service life, even though the effective utilization of the polishing solution is greatly improved by in-situ batch processing, the polishing efficiency is influenced along with the extension ofthe polishing time, and further the time required for removing a film with a certain thickness is prolonged, and the phenomenon can be realized by any one of the online detection methods to realize online detection and control. When the polishing rate is reduced to 80% of the initial polishing solution, various additives and fresh polishing solution should be replenished in time, and when the polishing rate is reduced to 60% of the initial polishing solution, the polishing solution in the container should be replaced in time.
The invention provides a polishing solution in-situ batch processing device, which integrates end point detection on the device by adding one or the combination of any two of electrical, mechanical, optical and other testing means and is used for judging the in-chip removal condition and the surface uniformity in the polishing process of a removed film.
In the polishing solution in-situ batch processing device provided by the invention, the lower end device of the cathode of the electrochemical processing loop is of a brush structure with micro-ultrasonic processing (shown in figure 4), and a plastic brush with relatively soft texture is adopted for online repairing of the polishing pad so as to avoid transition loss of the polishing pad caused by the traditional diamond repairing disc. During the polishing process, micro-ultrasonic treatment effect is generated by micro-current in the circuit loop, more particles buried in the polishing pad during the polishing process are removed, and the surface of the polishing pad is slightly brushed, so that the effect of repairing the polishing pad on line is achieved. Compared with a diamond repairing disc, the plastic brush has softer texture, so that the loss of the polishing pad is greatly reduced in the repairing process, the consumption cost of the polishing solution is saved, and the loss of the polishing pad is reduced to different degrees.
In the polishing solution in-situ batch processing method and the used device, the polishing solution can prolong the service life and effect of the polishing solution through in-situ regeneration treatment, and the cost of CMP consumables is effectively reduced. Micro-ultrasonic is generated by micro-current of the cathode of the electrochemical treatment loop, particles embedded in the polishing pad are effectively removed, the porous structure and the polishing effect of the polishing pad are recovered, meanwhile, the plastic soft brush is additionally arranged at the lower end to repair the polishing pad on line, the online repair capability is improved, and the loss of the polishing pad is reduced. The method effectively integrates the polishing solution effectiveness detection and the polishing end point detection together, judges the effectiveness of the polishing solution through the online detection of the polishing process, and further determines whether to supplement the fresh polishing solution or completely replace the fresh polishing solution. In short, the invention not only effectively reduces the consumption cost through the online treatment of the polishing solution, but also integrates the detection technology and the polishing pad online repair technology, and reduces the polishing pad ground loss and the serious consequences brought by a small amount of diamond micropowder particles during the repair of the original diamond repair disk by means of the micro-ultrasound and soft brush pad technology, thereby being an effective method and equipment for solving the high cost of the integrated circuit chemical mechanical polishing process.
The using method of the device comprises the following steps:
(1) the polishing solution waste liquid containing metal ions generated by the chemical mechanical polishing process is processed on line by an electrochemical method, the metal ions in the waste liquid are removed, and the oxidizing capability of an oxidant is reduced;
(2) judging whether to supplement or replace the polishing solution according to the effectiveness of the polishing solution, namely the stability of the polishing rate through online detection;
(3) and the uniformity of the polishing process is judged through online detection, and the end point control is realized.
Compared with the existing one-time consumption process of the polishing solution, the consumption of the polishing solution can be reduced, the inconvenience caused by the post-treatment of the polishing solution can be reduced, and the method and the equipment are effective for solving the high cost of the chemical mechanical polishing process of the integrated circuit.
Drawings
FIG. 1 is a schematic diagram of a damascene polishing structure for metal interconnects
FIG. 2 is a schematic diagram of conventional chemical mechanical polishing
FIG. 3 is a schematic view of a batch process chemical mechanical polishing system
FIG. 4 is a schematic view of an on-line repairing apparatus
Detailed Description
The essential features of the invention are further elucidated by the following description of an embodiment. The polishing machine can be any existing machine for CMP, and the polishing conditions adopt corresponding process conditions.
Example 1
The material to be polished is Cu/TaN, and the metal ions generated in the polishing process are Cu2+、Ta3+The removal of metal ions in the polishing solution adopts an electroplating process to remove Cu in the polishing solution2+、Ta3+Plating on the external coating film of the cathode, thereby reducing the metal ion content in the polishing solution used in batch processing, and simultaneously reducing the partially-failed oxidant at the anode of the circuit loop to recover the oxidizing capability of the polishing solution. The polishing solution containing device is a cylindrical device with an upper opening and a lower openingThe device comprises a polishing solution injection port, a deionized water port and a polishing waste liquid discharge port. The on-line detection method of the polishing process is an electrical signal test, and the polishing end point and the uniformity of the polishing process are judged according to the electrical signal of the metal film on the surface of the sample in the polishing process; outer knotAnd judging the effectiveness of the polishing solution according to the polishing efficiency condition between the combined wafers, and timely supplementing various additives and fresh polishing solution when the polishing rate is reduced to 80% of the initial polishing solution. The lower end device of the cathode of the circuit loop is a brush structure with micro-ultrasonic treatment, and a plastic brush with relatively soft texture is adopted for online repair of the polishing pad. The consumption cost of the polishing solution is effectively reduced through the online treatment of the polishing solution, the detection technology and the polishing pad online repairing technology are integrated, and the polishing pad loss and the serious consequences caused by a small amount of diamond micro-powder particles during the repairing of the original diamond repairing disc are reduced by means of the micro-ultrasound and soft brush pad technology.
Example 2
The polished material is Cu/Ru (ruthenium), the recovery of the polishing solution simultaneously comprises the supplement of fresh oxidant, and the online detection method is the online detection of mechanical signals, and the rest is the same as the example 1.
Example 3
The material to be polished is W/Ti (titanium), the polishing solution is recovered to be supplemented with fresh oxidant, and the online detection method is optical signal online detection, and the rest is the same as the example 1.
Example 4
The polished material is Ag/Ti (titanium), the recovery of the polishing solution simultaneously comprises the supplement of fresh oxidant, and the online detection method is the online detection of mechanical signals, and the rest is the same as the example 1.
Example 5
The polished material is Ag/Ru (ruthenium), the recovery of the polishing solution simultaneously comprises the supplement of fresh oxidant, and the online detection method is the online detection of electrical signals, and the rest is the same as the example 1.
Example 6
The polished material is Al/Ti (titanium), the polishing solution is recovered to supplement fresh oxidant, and the online detection method is optical signal online detection, and the rest is the same as the example 1.
Claims (10)
1. A method for in-situ batch processing of polishing slurry for metal chemical mechanical polishing of integrated circuit multilayer interconnection structure is characterized in that the batch processing method comprises the following steps:
(1) converting metal ions of polishing solution containing metal ions of a material to be polished, which is generated in the chemical mechanical polishing process, into metal by an electrochemical treatment process and depositing the metal ions on a cathode so as to remove the metal ions in the polishing solution;
(2) recovering the oxidation capacity of the polishing solution by removing the soluble metal ions in the step (1) through any one of two methods, namely an electrochemical treatment method, so that the cathode of the circuit is subjected to oxidation reaction, and the oxidation capacity of the polishing solution is reduced; or an oxidant is supplemented into the polishing solution, wherein the oxidant is hydrogen peroxide without metal ions, carbamide peroxide or ammonium persulfate.
2. The method of claim 1 wherein the electrochemical process is carried out by applying an electrical circuit to form the polishing system into a circuit loop, and wherein the metal ions in the polishing solution are directionally deposited on the cathode of the circuit loop under the influence of the electrical field.
3. The method of in-situ batch processing of polishing slurry for metal chemical mechanical polishing of integrated circuit multilevel interconnect structures of claim 1 or 2 wherein the electrochemical process is an electroplating process.
4. The method of claim 1 or 2, wherein the metal ion in the polishing slurry is Ta2+、Ru3、Ti4+、Ag+、W4+Or Al3+One or a mixture of any two or more ofA compound (I) is provided.
5. The apparatus for the in-situ batch processing of polishing solution suitable for the metal chemical mechanical polishing ofthe integrated circuit multilayer interconnection structure according to claim 1 is characterized in that the existing polishing process and the post-treatment process of the polishing solution are integrated, and a polishing solution in-situ batch processing system and a polishing pad on-line repairing system are added in the polishing system; the in-situ batch processing system is divided into a polishing solution electrochemical batch processing system and a polishing solution parameter online detection system; the electrochemical processing system and the on-line detection system are connected with the polishing system, and the polishing pad and the wafer material are soaked in the polishing solution, so that the information of the polishing rate and the uniformity of the polishing process is displayed through on-line detection.
6. The apparatus for the in-situ batch processing of polishing slurry for the chemical mechanical polishing of integrated circuit multilevel interconnect structure metal of claim 5 wherein the polishing system is a single head polisher or a multi-head polisher.
7. The apparatus for in-situ batch processing of polishing slurry for integrated circuit multilevel interconnect structure metal chemical mechanical polishing according to claim 5, wherein the in-line detection system is one or a combination of any two of electrical, optical and mechanical film thickness test means.
8. The apparatus for in-situ batch processing of polishing slurry for integrated circuit multilevel interconnect structure metal chemical mechanical polishing as recited in claim 5 wherein said polishing pad in-line repair system is a brush structure with micro-ultrasonication; the micro-ultrasound is generated using micro-current in a circuit loop to remove particles from thepolishing pad and clean the surface of the polishing pad.
9. The method of using the polishing solution in-situ batch processing device for metal chemical mechanical polishing of integrated circuit multilayer interconnection structure according to claim 8, characterized in that the polishing process and the polishing solution original processing process are integrated, and the using steps are as follows:
(1) the polishing solution waste liquid containing metal ions generated by the chemical mechanical polishing process is processed on line by an electrochemical method, the metal ions in the waste liquid are removed, and the oxidizing capability of an oxidant is reduced;
(2) judging whether to supplement or replace the polishing solution according to the effectiveness of the polishing solution, namely the stability of the polishing rate through online detection;
(3) and the uniformity of the polishing process is judged through online detection, and the end point control is realized.
10. The method of using the polishing solution in-situ batch processing apparatus for metal chemical mechanical polishing of integrated circuit multi-level interconnect structures as recited in claim 9, wherein when the polishing rate is reduced to 80% of the initial polishing solution, the polishing solution container should be replaced with various additives and fresh polishing solution, and when the polishing rate is reduced to 60% of the initial polishing solution.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100305518A CN1915595A (en) | 2006-08-30 | 2006-08-30 | Method for batch processing polishing fluid in situ for chemico-mechanical polishing metal, and equipment utilized |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2006100305518A CN1915595A (en) | 2006-08-30 | 2006-08-30 | Method for batch processing polishing fluid in situ for chemico-mechanical polishing metal, and equipment utilized |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101758457B (en) * | 2010-01-19 | 2012-05-30 | 中国科学院上海微系统与信息技术研究所 | Method for recovering and recycling chemically mechanical polishing solution |
| CN106392884A (en) * | 2016-12-14 | 2017-02-15 | 北京中电科电子装备有限公司 | Dressing control system and method for grinding wheel |
| CN106956216A (en) * | 2017-03-10 | 2017-07-18 | 南京航空航天大学 | A kind of grinding and polishing machining state on-Line Monitor Device |
| CN107877352A (en) * | 2017-10-23 | 2018-04-06 | 大连理工大学 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
| CN114633203A (en) * | 2020-12-15 | 2022-06-17 | 应用材料公司 | Compensation for slurry composition in situ electromagnetic induction monitoring |
| CN115464471A (en) * | 2022-09-15 | 2022-12-13 | 湘潭大学 | Ultrasonic auxiliary polishing device capable of self-adapting to irregular complex curved surface |
-
2006
- 2006-08-30 CN CNA2006100305518A patent/CN1915595A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101758457B (en) * | 2010-01-19 | 2012-05-30 | 中国科学院上海微系统与信息技术研究所 | Method for recovering and recycling chemically mechanical polishing solution |
| CN106392884A (en) * | 2016-12-14 | 2017-02-15 | 北京中电科电子装备有限公司 | Dressing control system and method for grinding wheel |
| CN106956216A (en) * | 2017-03-10 | 2017-07-18 | 南京航空航天大学 | A kind of grinding and polishing machining state on-Line Monitor Device |
| CN106956216B (en) * | 2017-03-10 | 2019-08-09 | 南京航空航天大学 | A kind of grinding and polishing machining state on-Line Monitor Device |
| CN107877352A (en) * | 2017-10-23 | 2018-04-06 | 大连理工大学 | Semiconductor wafer optical electro-chemistry mechanical polishing apparatus |
| CN114633203A (en) * | 2020-12-15 | 2022-06-17 | 应用材料公司 | Compensation for slurry composition in situ electromagnetic induction monitoring |
| CN115464471A (en) * | 2022-09-15 | 2022-12-13 | 湘潭大学 | Ultrasonic auxiliary polishing device capable of self-adapting to irregular complex curved surface |
| CN115464471B (en) * | 2022-09-15 | 2023-08-29 | 湘潭大学 | Ultrasonic auxiliary polishing device capable of self-adapting to irregular complex curved surface |
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