CN101905221A - Method for cleaning wafer after chemical mechanical polishing - Google Patents
Method for cleaning wafer after chemical mechanical polishing Download PDFInfo
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- CN101905221A CN101905221A CN2009100525403A CN200910052540A CN101905221A CN 101905221 A CN101905221 A CN 101905221A CN 2009100525403 A CN2009100525403 A CN 2009100525403A CN 200910052540 A CN200910052540 A CN 200910052540A CN 101905221 A CN101905221 A CN 101905221A
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Abstract
The invention discloses a method for cleaning a wafer after chemical mechanical polishing, comprising the following steps: providing a wafer after chemical mechanical polishing; and cleaning the wafer by using a chemical cleaning solution, wherein the concentration of the chemical cleaning solution is 0.4-0.8%. The method in the invention can effectively avoid the wafer surface from occurring pit-shaped defects, achieve better residue removal effect after chemical mechanical polishing and improve the reliability and stability of a semiconductor device.
Description
Technical field
The present invention relates to integrated circuit and make the field, particularly relate to the wafer cleaning method behind a kind of cmp.
Background technology
Along with size of semiconductor device reduces day by day, because multilayer interconnection or the bigger deposition process of filling depth ratio have caused the excessive fluctuating of wafer surface, cause the difficulty that photoetching process focuses on, feasible control ability to live width weakens, reduced the uniformity of live width on the entire wafer, therefore, industry has been introduced cmp (Chemical Mechanical Polishing CMP) has been come the planarization wafer surface.
The process of cmp generally includes following steps: at first, wafer is positioned on the grinding head, and described wafer surface is contacted with a grinding pad (Pad) downwards, then, by the relative motion between wafer surface and the described grinding pad with described wafer surface planarization.Described lapping liquid generally includes chemical mordant and abrasive grains, by softer easy the to be removed material of chemical reaction generation on chemical mordant and described surface to be ground, by the mechanism of abrasive grains described softer material is removed.And after the grinding of wafer process, a large amount of abrasive grains, metal ion and organic matter very easily are attached to wafer surface and form residue.Therefore, behind chemical mechanical milling tech, must carry out repeatedly surface clean technology, to remove these residues.
At present, it is principal mode with wet chemistry ablution (wet chemical cleaning) still that wafer behind the cmp cleans, in general, mainly comprise the steps: at first the wafer of finishing cmp to be put into a rinse bath, use hairbrush (brush) to clean, and clean with chemical cleaning solution simultaneously, the rotating speed of described hairbrush is 700～800 rpms, and described chemical cleaning solution is generally citric acid solution, and the concentration of described citric acid solution is 1% to 2%; Then, use the described wafer of deionized water rinsing; Dry described wafer at last.But, when the cleaning process of reality finishes, on the surface of wafer a large amount of hole shape defectives (pit defect) appears, influenced the reliability and the stability of semiconductor devices.
Industry also adopts another wafer cleaning method, promptly do not use the wafer after chemical cleaning solution cleans cmp, and only use the described wafer of deionized water rinsing, at this moment, the shape defective can not appear cheating in wafer surface, but the residue of wafer surface is not removed fully, has influenced cleaning performance.
When the wafer behind cmp cleans, can guarantee effectively to remove the residue of wafer surface, can avoid wafer surface hole shape defective to occur again is that those skilled in the art wish to solve but one of open question always.
Summary of the invention
The invention provides the wafer cleaning method behind a kind of cmp, both can avoid wafer surface hole shape defective to occur, can guarantee effectively to remove the residue of wafer surface again, improved the reliability and the stability of semiconductor devices.
For solving the problems of the technologies described above, the invention provides the wafer cleaning method behind a kind of cmp, comprising: the wafer behind the cmp is provided; Working concentration is that 0.4% to 0.8% chemical cleaning solution cleans described wafer.
Optionally, described chemical cleaning solution is a citric acid solution, and the time of using described chemical cleaning solution to clean described wafer is 10 seconds to 100 seconds.
Optionally, use hairbrush to clean described wafer when using described chemical cleaning solution to clean described wafer, the rotating speed of described hairbrush is 300～500 rpms.
Optionally, use described chemical cleaning solution to clean after the described wafer, also comprise: the step of using the described wafer of deionized water rinsing and drying.
Optionally, described cmp is a chemical and mechanical grinding to produce coppor.
Compared with prior art, wafer cleaning method behind the cmp provided by the present invention, employing concentration only is 0.4% to 0.8% chemical cleaning solution clean wafers, can prevent that chemical cleaning solution from causing excessive corrosion to wafer surface, thereby avoid wafer surface hole shape defective to occur, simultaneously, adopt this method can effectively remove the residue of wafer surface behind the cmp again, improved the reliability and the stability of semiconductor devices.
Description of drawings
The flow chart of the wafer cleaning method behind the cmp that Fig. 1 proposes for one embodiment of the invention;
Fig. 2 a and Fig. 2 b are respectively the hole shape defect distribution schematic diagram behind the cleaning method that adopts existing cleaning method and adopt one embodiment of the invention proposition.
The specific embodiment
For purpose of the present invention, feature are become apparent, the specific embodiment of the present invention is further described below in conjunction with accompanying drawing.
Make the field at integrated circuit, copper has replaced aluminium becomes super large-scale integration (Ultra Large Scale Integrated Circuit, USLI) the main flow interconnection technique in the manufacturing.In general, the copper wiring dual-damascene technics generally includes following steps: at first, has the certain thickness insulating barrier of deposition on the wafer of semiconductor devices, the described insulating barrier of etching is formed for the groove of mosaic technology then, then, in described groove, fill up metallic copper by electroplating technology, utilize the mode planarization wafer surface of cmp at last.
At present, the common working concentration of industry is the wafer after 1% to 2% chemical cleaning solution cleans cmp, though described chemical cleaning solution has stronger corrosivity, not can with copper atom generation chemical reaction.Yet, in the process that forms insulating barrier and groove, the wafer surface accumulation has a large amount of electric charges, these electric charges make copper atom be oxidized to have the copper ion of positive charge, and because the impedance ratio of the metallic copper of wafer surface center is lower, therefore, using chemical cleaning solution to clean in the process of described wafer, described concentration is that chemistry or electrochemical reaction faster can take place with positively charged copper ion for 1% to 2% chemical cleaning solution, and then in wafer surface formation hole shape defective (pit defect), especially cheat the shape defective in the center of wafer comparatively intensive, influenced the reliability and the stability of semiconductor devices.But if only use wafer behind the deionized water rinsing cmp, though this moment, the shape defective can not appear cheating in wafer surface, the residue of wafer surface is not removed fully yet, has influenced cleaning performance.
Core concept of the present invention is, formation reason by hole shape defective after the analytical chemistry mechanical lapping, existing technology is carried out minimum improvement, can avoid wafer surface hole shape defective to occur, and can effectively remove the residue of wafer surface behind the cmp, reach preferable cleaning performance, improve the reliability and the stability of semiconductor devices.
Be described in more detail below in conjunction with the wafer cleaning method of accompanying drawing after cmp of the present invention, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
Please refer to Fig. 1, the flow chart of the wafer cleaning method behind its cmp that proposes for one embodiment of the invention, in conjunction with this figure, the method comprising the steps of:
Step 11 provides the wafer behind the cmp.Have semiconductor devices on the described wafer, on described semiconductor devices, be formed with insulating barrier, in described insulating barrier, be formed with groove, in described groove, deposit metallic copper, can utilize the described wafer surface of mode planarization of cmp.Through after grinding, a large amount of abrasive grains, metal ion and organic matter very easily are attached to wafer surface and form residue at described wafer.Therefore, behind chemical mechanical milling tech, must carry out repeatedly surface clean technology to remove these residues.Simultaneously, in the process that forms insulating barrier and groove, the wafer surface accumulation has a large amount of electric charges, these electric charges to make copper atom be oxidized to have the copper ion of positive charge.
Step 12, working concentration are that 0.4% to 0.8% chemical cleaning solution cleans described wafer.
In an embodiment of the present invention, described chemical cleaning solution is a citric acid solution, concentration is the residues such as abrasive grains, metal ion and organic matter that 0.4% to 0.8% citric acid both can effectively have been removed wafer surface, simultaneously, the citric acid solution that concentration is lower and the reaction rate of copper ion have also reduced greatly, therefore, can avoid wafer surface hole shape defective to occur.
Wherein, using described concentration is that the removal effect that can reach as required time of 0.4% to 0.8% citric acid solution clean wafers is set, and those skilled in the art can obtain concrete technological parameter by experiment, and for example, scavenging period is 10 seconds to 100 seconds.
Preferably, for increasing the removal degree of wafer surface particulate, when using described chemical cleaning solution to clean described wafer, in the rinse bath of chemical-mechanical grinding device, clean described wafer surface with banister brush, preferably, the rotating speed of described hairbrush is 300～500 rpms, can effectively remove the particulate of wafer surface, and can reduce the reaction rate of chemical cleaning solution and copper ion.
Because it is that 0.4% to 0.8% chemical cleaning solution cleans described wafer that the present invention adopts concentration, therefore reduced the reaction rate of chemical cleaning solution and copper ion, can avoid wafer surface hole shape defective to occur, and can guarantee to get rid of fully the residue of wafer surface, improve stability of semiconductor device and reliability.
Wafer cleaning method behind the cmp that one embodiment of the invention proposed also comprises:
Step 13 is used the described wafer of deionized water rinsing.Can remove the acid ion that when using chemical cleaning solution to clean, residues in wafer surface by described deionized water rinsing, to avoid of the influence of described acid ion to successive process.
Step 14 dries described wafer.
Preferable, finish the step of using the described wafer of deionized water rinsing after, the method for described wafer by rotation can be dried.
Please continue with reference to figure 2a and Fig. 2 b, it is the comparison diagram of the hole shape defect distribution behind existing cleaning method of employing and the cleaning method that adopts one embodiment of the invention proposition, wherein, Fig. 2 a is the distribution map of the hole shape defective after existing cleaning method is finished, and Fig. 2 b is the distribution map that adopts the hole shape defective behind the cleaning method that one embodiment of the invention proposes.
Fig. 2 a and Fig. 2 b are by the electron microscope observation gained, and comparison diagram 2a and Fig. 2 b can find out obviously that the effect that adopts the cleaning method that one embodiment of the invention proposed is very outstanding, does not almost cheat the shape defective and occurs.Can learn,, because the basic reason that has found problem to take place,, simultaneously, can reach the removal effect of preferable leftover after chemical mechanical grinding again so can avoid wafer surface hole shape defective to occur though the present invention carries out less improvement.
In sum, wafer cleaning method behind the cmp provided by the present invention, working concentration is the wafer after 0.4% to 0.8% chemical cleaning solution cleans cmp, technology is simple, be easy to realize, and do not increase any cost, can effectively avoid wafer surface hole shape defective to occur, and can reach the removal effect of preferable leftover after chemical mechanical grinding, improved the reliability and the stability of semiconductor devices.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (7)
1. the wafer cleaning method behind the cmp comprises:
Wafer behind one cmp is provided;
Working concentration is that 0.4% to 0.8% chemical cleaning solution cleans described wafer.
2. the wafer cleaning method behind the cmp as claimed in claim 1 is characterized in that, described chemical cleaning solution is a citric acid solution.
3. the wafer cleaning method behind the cmp as claimed in claim 1 is characterized in that, the time of using described chemical cleaning solution to clean described wafer is 10 seconds to 100 seconds.
4. the wafer cleaning method behind the cmp as claimed in claim 1 is characterized in that, uses hairbrush to clean described wafer when using described chemical cleaning solution to clean described wafer.
5. the wafer cleaning method behind the cmp as claimed in claim 4 is characterized in that, the rotating speed of described hairbrush is 300 rpms to 500 rpms.
6. the wafer cleaning method behind the cmp as claimed in claim 1 is characterized in that, uses described chemical cleaning solution to clean after the described wafer, also comprises: the step of using the described wafer of deionized water rinsing and drying.
7. the wafer cleaning method behind the cmp as claimed in claim 1 is characterized in that described cmp is a chemical and mechanical grinding to produce coppor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100525403A CN101905221A (en) | 2009-06-04 | 2009-06-04 | Method for cleaning wafer after chemical mechanical polishing |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100525403A CN101905221A (en) | 2009-06-04 | 2009-06-04 | Method for cleaning wafer after chemical mechanical polishing |
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| CN101905221A true CN101905221A (en) | 2010-12-08 |
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| CN2009100525403A Pending CN101905221A (en) | 2009-06-04 | 2009-06-04 | Method for cleaning wafer after chemical mechanical polishing |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107855936A (en) * | 2017-10-31 | 2018-03-30 | 天津中环领先材料技术有限公司 | A kind of cleaning method of zone-melting silicon polished wafer polissoir |
| CN109174778A (en) * | 2018-06-22 | 2019-01-11 | 东莞华清光学科技有限公司 | A kind of white glass cleaning process |
| CN113618234A (en) * | 2021-07-21 | 2021-11-09 | 丹源医学科技(杭州)有限公司 | Surface roughening method of thin-wall metal shell implanted into human body |
-
2009
- 2009-06-04 CN CN2009100525403A patent/CN101905221A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107855936A (en) * | 2017-10-31 | 2018-03-30 | 天津中环领先材料技术有限公司 | A kind of cleaning method of zone-melting silicon polished wafer polissoir |
| CN109174778A (en) * | 2018-06-22 | 2019-01-11 | 东莞华清光学科技有限公司 | A kind of white glass cleaning process |
| CN113618234A (en) * | 2021-07-21 | 2021-11-09 | 丹源医学科技(杭州)有限公司 | Surface roughening method of thin-wall metal shell implanted into human body |
| CN113618234B (en) * | 2021-07-21 | 2023-03-07 | 丹源医学科技(杭州)有限公司 | Surface roughening method of thin-wall metal shell implanted into human body |
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Open date: 20101208 |