CN1905135B - 等离子蚀刻设备 - Google Patents

等离子蚀刻设备 Download PDF

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Publication number
CN1905135B
CN1905135B CN2006101039752A CN200610103975A CN1905135B CN 1905135 B CN1905135 B CN 1905135B CN 2006101039752 A CN2006101039752 A CN 2006101039752A CN 200610103975 A CN200610103975 A CN 200610103975A CN 1905135 B CN1905135 B CN 1905135B
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CN
China
Prior art keywords
substrate
chamber
plasma
etching apparatus
shielding
Prior art date
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Active
Application number
CN2006101039752A
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English (en)
Chinese (zh)
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CN1905135A (zh
Inventor
全富一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jusung Engineering Co Ltd
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Jusung Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jusung Engineering Co Ltd filed Critical Jusung Engineering Co Ltd
Publication of CN1905135A publication Critical patent/CN1905135A/zh
Application granted granted Critical
Publication of CN1905135B publication Critical patent/CN1905135B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2006101039752A 2005-07-29 2006-07-28 等离子蚀刻设备 Active CN1905135B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2005-0069391 2005-07-29
KR1020050069391A KR101149332B1 (ko) 2005-07-29 2005-07-29 플라즈마 식각 장치
KR1020050069391 2005-07-29

Publications (2)

Publication Number Publication Date
CN1905135A CN1905135A (zh) 2007-01-31
CN1905135B true CN1905135B (zh) 2012-05-09

Family

ID=36954515

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006101039752A Active CN1905135B (zh) 2005-07-29 2006-07-28 等离子蚀刻设备

Country Status (6)

Country Link
US (2) US7879187B2 (https=)
EP (1) EP1748465B1 (https=)
JP (1) JP4956080B2 (https=)
KR (1) KR101149332B1 (https=)
CN (1) CN1905135B (https=)
TW (1) TWI404138B (https=)

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KR100978754B1 (ko) * 2008-04-03 2010-08-30 주식회사 테스 플라즈마 처리 장치
US8398778B2 (en) 2007-01-26 2013-03-19 Lam Research Corporation Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter
US8888950B2 (en) 2007-03-16 2014-11-18 Charm Engineering Co., Ltd. Apparatus for plasma processing and method for plasma processing
WO2008120946A1 (en) 2007-04-02 2008-10-09 Sosul Co., Ltd. Apparatus for supporting substrate and plasma etching apparatus having the same
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
WO2013048013A1 (ko) * 2011-09-28 2013-04-04 한국기초과학지원연구원 비접촉식 플라즈마 에싱 장치
KR101405066B1 (ko) * 2011-09-28 2014-06-13 한국기초과학지원연구원 비접촉식 플라즈마 에싱 장치
KR101415740B1 (ko) * 2012-10-04 2014-07-04 한국기초과학지원연구원 원격 플라즈마 소스 에싱 장치
KR20140140418A (ko) * 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기층 에칭 장치 및 유기층 에칭 방법
EP3092324B1 (en) 2014-01-09 2020-07-15 United Technologies Corporation Coating process using gas screen
US9885110B2 (en) 2014-08-06 2018-02-06 United Technologies Corporation Pressure modulated coating
US11866816B2 (en) 2016-07-06 2024-01-09 Rtx Corporation Apparatus for use in coating process
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
SG11202111201WA (en) * 2019-04-11 2021-11-29 Applied Materials Inc Plasma densification within a processing chamber
US10749248B1 (en) * 2019-09-23 2020-08-18 Qualcomm Incorporated Antenna module placement and housing for reduced power density exposure
CN119495544A (zh) * 2023-08-21 2025-02-21 中微半导体设备(上海)股份有限公司 一种刻蚀设备及其衬底处理系统和器件制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1481207A (zh) * 2002-09-04 2004-03-10 ���ǵ�����ʽ���� 组合有双层线圈型天线的感应耦合式等离子发生设备

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US5384008A (en) * 1993-06-18 1995-01-24 Applied Materials, Inc. Process and apparatus for full wafer deposition
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
DE19622015A1 (de) * 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
JPH10241895A (ja) * 1996-11-04 1998-09-11 Applied Materials Inc プラズマシース発生高調波をフィルタリングすることによるプラズマプロセス効率の改善
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
US6271129B1 (en) 1997-12-03 2001-08-07 Applied Materials, Inc. Method for forming a gap filling refractory metal layer having reduced stress
US6335293B1 (en) 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6492612B1 (en) * 1998-12-28 2002-12-10 Tokyo Electron Limited Plasma apparatus and lower electrode thereof
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US20020142612A1 (en) * 2001-03-30 2002-10-03 Han-Ming Wu Shielding plate in plasma for uniformity improvement
KR100433008B1 (ko) 2001-04-18 2004-05-31 (주)소슬 플라즈마 식각 장치
KR100428813B1 (ko) 2001-09-18 2004-04-29 주성엔지니어링(주) 플라즈마 발생장치 및 이를 이용한 ＳｉＯ₂박막 식각방법
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
JP3692133B2 (ja) * 2002-12-04 2005-09-07 積水化学工業株式会社 ウェハー外縁の常圧プラズマ処理装置及びエッチング等の処理方法
JP3712125B2 (ja) * 2003-02-03 2005-11-02 東京応化工業株式会社 プラズマ処理装置
WO2004097919A1 (ja) * 2003-05-02 2004-11-11 Tokyo Electron Limited 処理ガス導入機構およびプラズマ処理装置
JP4122004B2 (ja) 2003-05-12 2008-07-23 株式会社ソスル プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステ厶
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7943007B2 (en) * 2007-01-26 2011-05-17 Lam Research Corporation Configurable bevel etcher

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1481207A (zh) * 2002-09-04 2004-03-10 ���ǵ�����ʽ���� 组合有双层线圈型天线的感应耦合式等离子发生设备

Also Published As

Publication number Publication date
US20070029044A1 (en) 2007-02-08
US7879187B2 (en) 2011-02-01
JP2007043148A (ja) 2007-02-15
KR101149332B9 (ko) 2025-01-10
EP1748465B1 (en) 2015-04-15
US20110079581A1 (en) 2011-04-07
EP1748465A3 (en) 2009-10-14
EP1748465A2 (en) 2007-01-31
TWI404138B (zh) 2013-08-01
KR101149332B1 (ko) 2012-05-23
US8177992B2 (en) 2012-05-15
JP4956080B2 (ja) 2012-06-20
CN1905135A (zh) 2007-01-31
KR20070014601A (ko) 2007-02-01
TW200721299A (en) 2007-06-01

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