CN1899707A - 用于控制光学涂布器装置中的分散误差的设备 - Google Patents
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Abstract
适用于光学涂布器装置使用的化学溶液分散设备。该设备包括:喷嘴,适于将化学溶液喷洒到晶片上、压力传感器,与喷嘴相关联,并且适于感应喷洒压力并生成对应于所感应的喷洒压力的压力值、以及控制器,适于接收压力值,将所接收的压力值与预设阈值压力值做比较,并且当所接收的压力值超过预设阀值压力值时生成互锁信号。
Description
技术领域
本发明的实施例涉及适用于在涂布器(spinner)装置中使用的控制设备。更具体,本发明的实施例涉及适于减小在通过喷嘴分散(dispense)化学溶液中的误差(例如,阻塞)的控制设备。
本申请基于35U.S.C.§119要求2005年7月19日提交的韩国专利申请10-2005-0065141的优先权,将其全部主题在此引用作为参考。
背景技术
在制造半导体器件中使用的多数工序通常可以分类为涉及制造、组装和测试。在例如晶片的衬底的表面上顺序执行制造工序,例如杂质扩散、光刻胶形成、材料层蚀刻以及材料层形成,以制造电路。当电路(通常包含在称为电路片的部分晶片)在其“晶片上”状态中完全可操作时,制造工序通常完成。
光刻工序是制造工序的通常类型。在典型的光刻工序中,形成氧化物层以保护抛光的硅晶片的表面。然后执行光蚀刻工序,其中通过将溶液滴到氧化物层并且然后高速旋转晶片以均匀地涂敷晶片,将液态化学溶液“旋涂”到晶片上。在干燥旋涂层之后,通过构图的掩模用光学能量(下文中称为“光”)照射晶片。穿过掩模的部分光与化学溶液层反应(例如,氧化)。然后,显影晶片,使得晶片上的氧化的表面部分反应以形成虚拟电路图形图像。随后,可以通过使用气体和/或其他化学溶液的各种蚀刻工序,选择性地除去在晶片上先前形成的材料层(即,在化学溶液层之下)。以这样的方式,可以在晶片上形成期望的电路图形。如所期望,在所得电路图形的最终质量中,向晶片提供化学溶液是非常重要的因素。例如,覆盖晶片的化学溶液层的厚度对于与电路图形相关联的特定临界尺寸(CD)的精确确定是至关重要的。
在适于使用化学溶液(例如,光刻胶)涂敷晶片的传统应用器件中,通常在与存储罐(tank)相关联的交换阀的前端安装传感器,以防止在光刻胶溶液中生成不期望的空气泡。该传感器通常由在与存储罐相关联的交换阀和化学溶液供给管之间连接的辅助传感器所备份。以这种方式,可以保持光刻胶溶液的良好控制的流。
例如,在U.S.专利No.6,332,924B1中公开了适于均匀地用光刻胶溶液涂敷晶片的设备,将其主题在此引入作为参考。该设备允许在通过喷嘴提供的均匀流出压力之下,用化学溶液均匀地涂敷晶片。
图1说明传统化学溶液分散设备的示例性结构。
该化学溶液分散设备包括至少两个容纳化学溶液的瓶12a和12b;化学供给线14,形成瓶12a和12b之间的化学溶液的流路;连接到发动机40的涂布(spin)卡盘42;以及净化气体供给管16,在压力下从净化气体供给源11向瓶12a和12b供给净化气体。该化学溶液分散设备还包括汽水阀(trap)罐18,从每个瓶12a和12b延伸,适于将限定量的化学溶液提供给化学供应线14,还包括第一和第二阀15和17,适于响应于从控制器20接收的控制信号,控制通过汽水阀罐18的化学溶液流。该化学溶液分散设备还包括光传感器24a/24b,其构造为光发射器和光接收器,并且适于校验汽水阀罐18是否装有化学溶液。由光传感器24a/24b所感应的从控制器20所接收的控制信号控制该处理。
此外,该化学溶液分散设备包括泵19,适于向流过化学供给线14的化学溶液提供流压;化学过滤器30,适于过滤来自流过化学供给线14的化学溶液的异质物质和空气泡;倒吸阀26,连接在化学过滤器30之后,并适于向化学供给线14提供吸力,使得一旦喷洒操作结束,喷洒的化学溶液的残留滴不滴落在晶片(W)上;以及喷嘴28,连接到倒吸阀26,并适于喷洒化学溶液。该化学溶液分散设备还包括气泡排气线32和排气阀34,连接到化学过滤器30,并适于从化学过滤器30的内部除去空气气泡。
当由控制器20开启第一阀15或第二阀17以使用化学溶液涂敷晶片(W)时,化学溶液从瓶12a和/或12b流入泵19。泵19在控制器20的控制下加压流入的化学溶液,并将其传送到化学过滤器30。化学过滤器30过滤加压的化学溶液。然后在由泵19所提供的压力之下,通过喷嘴28喷洒所过滤的化学溶液。喷嘴28典型地具有多个以均匀间距形成的喷洒孔29,以均匀地将化学溶液喷洒到晶片(W)上。
当这种类型的传统化学溶液分散设备长时间用于光刻胶涂布器设备,例如小的阻塞可在某些喷洒孔29中形成,由此阻碍将化学溶液均匀地喷洒到晶片W上。这种效应导致在晶片(W)上最终形成的产品(例如,半导体器件)的质量缺陷。
发明内容
本发明的实施例提供减小在光学涂布器设备中与化学溶液的分散相关联的误差。在这些实施例中,抑制了喷嘴阻塞并避免了在所制造的产品中出现的退化。
在一个实施例中,本发明提供一种化学溶液分散设备,适用于光学涂布器设备使用,并包括:喷嘴,适于将化学溶液喷洒到晶片上、压力传感器,与喷嘴相关联,并且适于感应喷洒压力并生成对应于所感应的喷洒压力的压力值、以及控制器,适于接收压力值,将所接收的压力值与预设阈值压力值做比较,并且当所接收的压力值超过预设阀值压力值时生成互锁信号。
在一个相关方面,喷嘴可包括多个适用于喷洒化学溶液的喷洒孔。在另一相关方面,预设阈值压力值可以是大约0.1MPA。在另一相关方面,可在喷嘴的表面上安装压力传感器。
附图说明
图1说明传统化学溶液分散设备的一种结构;以及
图2说明根据本发明的实施例的化学溶液分散设备的一个示例性结构。
具体实施方式
将参照图2更详细地描述本发明的实施例。本领域技术人员将理解,可以不同地实施本发明,而不仅限制于所说明的实施例。而是,示出本实施例作为教导实例。
图2说明根据本发明的实施例的化学溶液分散设备的示例性结构。
如之前,化学溶液分散设备包括至少两个容纳化学溶液的瓶12a和12b;化学供给线14,形成瓶12a和12b之间的化学溶液的流路;连接到发动机40的涂布卡盘42;以及净化气体供给管16,在压力下从净化气体供给源11向瓶12a和12b供给净化气体。该化学溶液分散设备还包括汽水阀罐18,从每个瓶12a和12b伸出,适于将限定量的化学溶液提供给化学供应线14,还包括第一和第二阀15和17,适于响应于从控制器20接收的控制信号,控制通过汽水阀罐18的化学溶液流。该化学溶液分散设备还包括光传感器24a/24b,其构造为光发射器和光接收器,并且适于校验汽水阀罐18是否装有化学溶液。由光传感器24a/24b所感应的从控制器20所接收的控制信号控制该处理。
此外,该化学溶液分散设备包括泵19,适于向流过化学供给线14的化学溶液提供流压;化学过滤器30,适于过滤来自流过化学供给线14的化学溶液的异质物质和空气泡;倒吸阀26,连接在化学过滤器30之后,并适于向化学供给线14提供吸力,使得一旦喷洒操作结束,喷洒的化学溶液的残留滴不滴落在晶片(W)上;以及喷嘴28,连接到倒吸阀26,并适于喷洒化学溶液。该化学溶液分散设备还包括气泡排气线32和排气阀34,连接到化学过滤器30,并适于从化学过滤器30的内部除去空气气泡。
当由控制器20开启第一阀15或第二阀17以使用化学溶液涂敷晶片(W)时,化学溶液从瓶12a和/或12b流入泵19。泵19在控制器20的控制下加压流入的化学溶液,并将其传送到化学过滤器30。化学过滤器30过滤加压的化学溶液。然后在由泵19所提供的压力之下,通过喷嘴28喷洒所过滤的化学溶液。喷嘴28典型地具有多个以均匀间距形成的喷洒孔29,以均匀地将化学溶液喷洒到晶片(W)上。
然而,喷嘴28还配置具有第一和第二压力传感器25和27,分别安装在喷嘴28的相对端,并且适于感应喷洒压力。控制器20还适于接收从第一和第二压力传感器25和27获得的压力值。所接收的压力值与和喷嘴28的未阻塞的操作相关联的预设阈值压力值做比较。这样,控制器20可确定喷嘴28是否变得阻塞,并且当作出这种确定时生成互锁信号。
因此,由于化学溶液喷洒在安装在涂布卡盘42的晶片(W)上,第一和第二压力传感器25和27持续地或周期地感应由喷嘴28提供的压力。将由第一和第二压力传感器25和27感应的压力值提供给控制器20,并且控制器20校验所接收的压力值是否超过预设阈值压力值(例如,0.1MPA值)。当所感应的压力超过阈值压力时,控制器生成互锁信号以停止处理。
在所说明的实施例中,只要喷嘴28的喷洒孔29保持未阻塞,所得喷洒压力保持在阈值压力(例如,大约0.1MPA)以下。然而,由于太多的喷洒孔29变得阻塞,喷洒压力上升到阈值压力以上,以触发(trip)互锁信号。
如上所述,根据本发明的示例性实施例,当将化学溶液分散到光学涂布设备中的晶片上时,校验喷嘴的喷洒压力。当太多的喷洒孔变得阻塞时,生成互锁信号并停止处理。因此,不会发生在所制造的产品中的质量恶化。
本领域技术人员将理解,可以对于上述做出改进和变化,而不背离由下面的权利要求所限定的本发明的范围。
Claims (8)
1.一种适用于光学涂布器装置使用的化学溶液分散设备,包括:
喷嘴,适于将化学溶液喷洒到晶片上;
压力传感器,与喷嘴相关联,并且适于感应喷洒压力并生成对应于所感应的喷洒压力的压力值;以及
控制器,适于接收压力值,将所接收的压力值与预设阈值压力值做比较,并且当所接收的压力值超过预设阀值压力值时生成互锁信号。
2.如权利要求1的设备,其中喷嘴包括多个适于喷洒化学溶液的喷洒孔。
3.如权利要求1的设备,其中预设阈值压力值大约是0.1MPA。
4.如权利要求1的设备,其中在喷嘴的表面上安装压力传感器。
5.一种适用于光学涂布器装置使用的化学溶液分散设备,包括:
喷嘴,适于将化学溶液喷洒到晶片上;
第一和第二压力传感器,与喷嘴相关联,每个适于感应喷洒压力并生成对应于所感应的喷洒压力的压力值;以及
控制器,适于接收来自第一和第二压力传感器的压力值,将所接收的压力值与预设阈值压力值做比较,并且当所接收的压力值超过预设阀值压力值时生成互锁信号。
6.如权利要求1的设备,其中喷嘴包括多个适于喷洒化学溶液的喷洒孔。
7.如权利要求1的设备,其中预设阈值压力值大约是0.1MPA。
8.如权利要求1的设备,其中在喷嘴的表面上安装第一和第二压力传感器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050065141 | 2005-07-19 | ||
KR1020050065141A KR100610023B1 (ko) | 2005-07-19 | 2005-07-19 | 포토스피너설비의 분사불량 제어장치 |
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CN1899707A true CN1899707A (zh) | 2007-01-24 |
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CNA2006101055793A Pending CN1899707A (zh) | 2005-07-19 | 2006-07-17 | 用于控制光学涂布器装置中的分散误差的设备 |
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US (1) | US7594969B2 (zh) |
JP (1) | JP2007027764A (zh) |
KR (1) | KR100610023B1 (zh) |
CN (1) | CN1899707A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI498170B (zh) * | 2010-03-15 | 2015-09-01 | Toray Eng Co Ltd | A coating liquid supply device and a coating liquid supply method |
Families Citing this family (7)
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KR100819095B1 (ko) * | 2006-11-03 | 2008-04-02 | 삼성전자주식회사 | 포토스피너설비의 분사제어장치 |
JP4981692B2 (ja) * | 2008-01-07 | 2012-07-25 | 旭サナック株式会社 | 多液混合装置 |
CN102294317A (zh) * | 2010-06-28 | 2011-12-28 | 无锡华润上华半导体有限公司 | 光刻胶喷涂装置及方法 |
US20140027535A1 (en) * | 2012-07-30 | 2014-01-30 | Yu-Chun Pan | Method for providing photoresist and photoresist dispensing apparatus |
US9573144B2 (en) * | 2014-05-30 | 2017-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Coating apparatus and method of forming coating film |
KR20190126157A (ko) * | 2017-03-17 | 2019-11-08 | 티이엘 에프에스아이, 인코포레이티드 | 극저온 유체 스프레이들과 같은 유체 스프레이들을 이용한 마이크로 전자 기판들의 처리를 모니터링하기 위한 시스템 및 방법 |
JP6905902B2 (ja) * | 2017-09-11 | 2021-07-21 | 東京エレクトロン株式会社 | 処理液供給装置 |
Family Cites Families (6)
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US6190063B1 (en) * | 1998-01-09 | 2001-02-20 | Tokyo Electron Ltd. | Developing method and apparatus |
US6322009B1 (en) | 1999-10-29 | 2001-11-27 | Advanced Micro Devices, Inc. | Common nozzle for resist development |
US6384894B2 (en) | 2000-01-21 | 2002-05-07 | Tokyo Electron Limited | Developing method and developing unit |
US6688784B1 (en) | 2000-10-25 | 2004-02-10 | Advanced Micro Devices, Inc. | Parallel plate development with multiple holes in top plate for control of developer flow and pressure |
US6848625B2 (en) * | 2002-03-19 | 2005-02-01 | Tokyo Electron Limited | Process liquid supply mechanism and process liquid supply method |
KR100780718B1 (ko) * | 2004-12-28 | 2007-12-26 | 엘지.필립스 엘시디 주식회사 | 도포액 공급장치를 구비한 슬릿코터 |
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- 2006-06-19 US US11/454,843 patent/US7594969B2/en not_active Expired - Fee Related
- 2006-07-17 CN CNA2006101055793A patent/CN1899707A/zh active Pending
- 2006-07-19 JP JP2006197284A patent/JP2007027764A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI498170B (zh) * | 2010-03-15 | 2015-09-01 | Toray Eng Co Ltd | A coating liquid supply device and a coating liquid supply method |
Also Published As
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JP2007027764A (ja) | 2007-02-01 |
US7594969B2 (en) | 2009-09-29 |
KR100610023B1 (ko) | 2006-08-08 |
US20070017635A1 (en) | 2007-01-25 |
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