CN1898800A - 用于成像器的双联电容器结构及其形成方法 - Google Patents
用于成像器的双联电容器结构及其形成方法 Download PDFInfo
- Publication number
- CN1898800A CN1898800A CNA2004800380698A CN200480038069A CN1898800A CN 1898800 A CN1898800 A CN 1898800A CN A2004800380698 A CNA2004800380698 A CN A2004800380698A CN 200480038069 A CN200480038069 A CN 200480038069A CN 1898800 A CN1898800 A CN 1898800A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000009977 dual effect Effects 0.000 title abstract description 7
- 230000002093 peripheral effect Effects 0.000 claims abstract description 67
- 238000003384 imaging method Methods 0.000 claims abstract description 11
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- 239000000758 substrate Substances 0.000 claims description 41
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- 239000000463 material Substances 0.000 claims description 20
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- 150000004767 nitrides Chemical class 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 11
- 150000004706 metal oxides Chemical class 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 229910019001 CoSi Inorganic materials 0.000 claims description 8
- 229910016006 MoSi Inorganic materials 0.000 claims description 8
- 229910008484 TiSi Inorganic materials 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
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- 238000000059 patterning Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Abstract
Description
Claims (49)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/689,948 US7038259B2 (en) | 2003-10-22 | 2003-10-22 | Dual capacitor structure for imagers and method of formation |
US10/689,948 | 2003-10-22 | ||
PCT/US2004/034370 WO2005043625A2 (en) | 2003-10-22 | 2004-10-19 | Dual capacitor structure for imagers and method of formation |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1898800A true CN1898800A (zh) | 2007-01-17 |
CN1898800B CN1898800B (zh) | 2010-10-20 |
Family
ID=34521515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800380698A Expired - Fee Related CN1898800B (zh) | 2003-10-22 | 2004-10-19 | 用于成像器的双联电容器结构及其形成方法 |
Country Status (7)
Country | Link |
---|---|
US (3) | US7038259B2 (zh) |
EP (1) | EP1676324A2 (zh) |
JP (1) | JP2007513495A (zh) |
KR (1) | KR100854571B1 (zh) |
CN (1) | CN1898800B (zh) |
TW (1) | TWI251438B (zh) |
WO (1) | WO2005043625A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790864A (zh) * | 2009-03-12 | 2012-11-21 | 索尼公司 | 固体摄像装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7038259B2 (en) * | 2003-10-22 | 2006-05-02 | Micron Technology, Inc. | Dual capacitor structure for imagers and method of formation |
US7663167B2 (en) | 2004-12-23 | 2010-02-16 | Aptina Imaging Corp. | Split transfer gate for dark current suppression in an imager pixel |
KR100752655B1 (ko) * | 2006-02-15 | 2007-08-29 | 삼성전자주식회사 | 이미지센서 및 그 제조 방법 |
KR20070082956A (ko) * | 2006-02-20 | 2007-08-23 | 삼성전자주식회사 | 액정표시패널용 어레이 기판 |
US7531374B2 (en) * | 2006-09-07 | 2009-05-12 | United Microelectronics Corp. | CMOS image sensor process and structure |
US7944020B1 (en) | 2006-12-22 | 2011-05-17 | Cypress Semiconductor Corporation | Reverse MIM capacitor |
KR100885494B1 (ko) * | 2007-06-05 | 2009-02-24 | 삼성전자주식회사 | 커패시터를 갖는 이미지 소자의 제조방법 및 그에 의해제조된 이미지 소자 |
US20090128991A1 (en) * | 2007-11-21 | 2009-05-21 | Micron Technology, Inc. | Methods and apparatuses for stacked capacitors for image sensors |
KR101458052B1 (ko) * | 2008-06-12 | 2014-11-06 | 삼성전자주식회사 | 혼색 방지 구조를 갖는 시모스 이미지 센서 및 그 제조방법 |
US8188786B2 (en) | 2009-09-24 | 2012-05-29 | International Business Machines Corporation | Modularized three-dimensional capacitor array |
JP5704848B2 (ja) * | 2010-06-30 | 2015-04-22 | キヤノン株式会社 | 固体撮像装置およびカメラ |
US9935139B2 (en) | 2014-08-22 | 2018-04-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor and method for forming the same |
CN109979930B (zh) * | 2017-12-28 | 2020-12-04 | 南京大学 | 基于复合介质栅光敏探测器的2×2阵列布局及工作方法 |
US11264389B2 (en) * | 2020-06-03 | 2022-03-01 | Nanya Technology Corporation | Stack capacitor structure and method for forming the same |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797776A (en) * | 1980-12-10 | 1982-06-17 | Fuji Xerox Co Ltd | Image pickup device for reading original |
JP3356816B2 (ja) * | 1992-03-24 | 2002-12-16 | セイコーインスツルメンツ株式会社 | 半導体光電気変換装置 |
JP2755176B2 (ja) * | 1994-06-30 | 1998-05-20 | 日本電気株式会社 | 固体撮像素子 |
US6124606A (en) * | 1995-06-06 | 2000-09-26 | Ois Optical Imaging Systems, Inc. | Method of making a large area imager with improved signal-to-noise ratio |
JPH09219823A (ja) * | 1995-12-07 | 1997-08-19 | Alps Electric Co Ltd | 密着型エリアセンサ |
JP3853478B2 (ja) * | 1997-09-10 | 2006-12-06 | エルピーダメモリ株式会社 | 半導体集積回路装置の製造方法 |
JP4052729B2 (ja) * | 1998-06-12 | 2008-02-27 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
KR100268424B1 (ko) * | 1998-08-07 | 2000-10-16 | 윤종용 | 반도체 장치의 배선 형성 방법 |
US6274887B1 (en) * | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
US6809767B1 (en) | 1999-03-16 | 2004-10-26 | Kozlowski Lester J | Low-noise CMOS active pixel sensor for imaging arrays with high speed global or row reset |
US6640403B2 (en) | 1999-03-22 | 2003-11-04 | Vanguard International Semiconductor Corporation | Method for forming a dielectric-constant-enchanced capacitor |
US6204524B1 (en) * | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
KR100477788B1 (ko) * | 1999-12-28 | 2005-03-22 | 매그나칩 반도체 유한회사 | 커패시터가 접속된 포토다이오드를 갖는 씨모스이미지센서 및 그 제조방법 |
JP2002072963A (ja) * | 2000-06-12 | 2002-03-12 | Semiconductor Energy Lab Co Ltd | 発光モジュールおよびその駆動方法並びに光センサ |
KR100397663B1 (ko) * | 2000-06-23 | 2003-09-13 | (주) 픽셀플러스 | 데이터 입출력선이 리셋 모드의 전압으로 유지되는 씨모스 이미지 센서 |
JP2002083880A (ja) * | 2000-06-30 | 2002-03-22 | Toshiba Corp | 半導体装置及びその製造方法 |
US6660660B2 (en) * | 2000-10-10 | 2003-12-09 | Asm International, Nv. | Methods for making a dielectric stack in an integrated circuit |
JP3847645B2 (ja) * | 2002-03-20 | 2006-11-22 | 富士通株式会社 | 半導体装置及びその製造方法 |
US20040012043A1 (en) * | 2002-07-17 | 2004-01-22 | Gealy F. Daniel | Novel dielectric stack and method of making same |
US7145152B2 (en) * | 2003-10-14 | 2006-12-05 | General Electric Company | Storage capacitor design for a solid state imager |
US7038259B2 (en) * | 2003-10-22 | 2006-05-02 | Micron Technology, Inc. | Dual capacitor structure for imagers and method of formation |
-
2003
- 2003-10-22 US US10/689,948 patent/US7038259B2/en not_active Expired - Lifetime
-
2004
- 2004-10-19 JP JP2006536694A patent/JP2007513495A/ja active Pending
- 2004-10-19 EP EP04795517A patent/EP1676324A2/en not_active Withdrawn
- 2004-10-19 WO PCT/US2004/034370 patent/WO2005043625A2/en active Application Filing
- 2004-10-19 CN CN2004800380698A patent/CN1898800B/zh not_active Expired - Fee Related
- 2004-10-19 KR KR1020067009901A patent/KR100854571B1/ko active IP Right Grant
- 2004-10-22 TW TW093132164A patent/TWI251438B/zh active
-
2005
- 2005-03-01 US US11/067,886 patent/US7274054B2/en not_active Expired - Lifetime
-
2006
- 2006-10-20 US US11/583,810 patent/US7589365B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790864A (zh) * | 2009-03-12 | 2012-11-21 | 索尼公司 | 固体摄像装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI251438B (en) | 2006-03-11 |
KR100854571B1 (ko) | 2008-08-26 |
EP1676324A2 (en) | 2006-07-05 |
US7274054B2 (en) | 2007-09-25 |
US20050087780A1 (en) | 2005-04-28 |
CN1898800B (zh) | 2010-10-20 |
US7589365B2 (en) | 2009-09-15 |
TW200522728A (en) | 2005-07-01 |
WO2005043625A2 (en) | 2005-05-12 |
JP2007513495A (ja) | 2007-05-24 |
KR20060120134A (ko) | 2006-11-24 |
WO2005043625A3 (en) | 2005-09-01 |
US20050145906A1 (en) | 2005-07-07 |
US7038259B2 (en) | 2006-05-02 |
US20070034917A1 (en) | 2007-02-15 |
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Owner name: APTINA DIGITAL IMAGING HOLDINGS INC. Free format text: FORMER OWNER: MICROMETER TECHNOLOGY CO., LTD. Effective date: 20100525 |
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Effective date of registration: 20100525 Address after: Cayman Islands Applicant after: Micron Technology Inc. Address before: Idaho Applicant before: Micron Technology, INC. |
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