CN1889268A - Low-substrate leakage current hole accumulating active picture element and producing method thereof - Google Patents
Low-substrate leakage current hole accumulating active picture element and producing method thereof Download PDFInfo
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- CN1889268A CN1889268A CN 200510083007 CN200510083007A CN1889268A CN 1889268 A CN1889268 A CN 1889268A CN 200510083007 CN200510083007 CN 200510083007 CN 200510083007 A CN200510083007 A CN 200510083007A CN 1889268 A CN1889268 A CN 1889268A
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Abstract
The present invention provides active dot structure based on N substrate and photodiode, such low substrate leakage current hole accumulation type active dot structure effectively reducing dark current and raising quantum efficiency. It contains growing single-layer P+ type epitaxial layer on N substrate, growing single-layer P type epitaxial layer on P+ type epitaxial layer, implanting single-layer N+ zone in P epitaxial layer zone and shallow implanting single-layer P zone in N+ zone, thereby forming two PN junctions capable of absorbing different wavelength implanting light. Said N substrate can effectively prevent light charge diffusing between pixel and preventing diffusing phenomena.
Description
Technical field
The present invention relates to microelectronic integrated circuit (IC) design technical field, relate in particular to a kind of hole accumulating active picture element and manufacture method thereof of low-substrate leakage current.
Background technology
Research through the more than ten years, CMOS (Complementary Metal-Oxide-Semiconductor Transistor, Chinese: complementary subordinate oxide semiconductor) imageing sensor has been obtained obvious improvement at some aspect of performance, but at aspects such as noise and image quality all less than CCD (Charge Coupled Device, Chinese: imageing sensor charge coupled device).For the ccd image sensor technology, based on the imageing sensor of CMOS technology have cost low, low in energy consumption, be convenient to advantages such as extensive integrated.
Especially along with the characteristic size of CMOS technology is further dwindled by the equal proportion principle, concerning some was used, the advantage of some performance of cmos image sensor technology was more outstanding.
The cmos image sensor technology can the integrated many adjunct circuits of single-chip, as electric power management circuit, image processing circuit, image compression circuit etc.; Pixel cell in the cmos device can be done smallerly simultaneously, can provide than the more high-resolution image device of ccd image sensor.
At present, the pixel cell that is used for the cmos image sensor structure mainly contains passive pixel structure and active pixel structure.The great advantage of passive pixel structure is an only integrated transistor in the pixel, can obtain big activity coefficient; The rate of finished products height that circuit structure is uncomplicated, addressing is simple, obtain, thereby price is low.But the resistance and the capacity ratio of the column bus equivalence of passive pixel are bigger, and the speed that makes pixel read is slow, and particularly when pel array was bigger, the signal delay and the loss of signal that are brought by column bus were very big; The noise that next passive pixel is read is bigger, and the loss of signal charge becomes along with the growth of column bus greatly, has reduced signal to noise ratio.
Because above-mentioned drawbacks limit application, active pixel structure that very fast quilt developed afterwards replaces.Active pixel inside comprises an active device, promptly comprise an amplifier of forming by one or more transistors, usually following transistor by the source constitutes, this amplifier has amplification and buffering function in pixel inside, electric charge does not need through arriving output amplifier at a distance, column bus directly output be voltage or current signal, therefore avoided signal charge in the picture passive pixel must could arrive the defective of amplifier through long line bus very.
At present, the active pixel structure commonly used of measured CMOS manufacture process is the photodiode that comprises three transistors and a N+/P-trap, but this active pixel has bigger dark current, influenced the dynamic range of cmos image sensor greatly, more seriously big dark current will cause cmos image sensor white point to occur.
Another kind of active pixel structure Design is based on the pinning type photodiode of P type substrate, this photodiode have surperficial dark current low, blue light is had good response characteristic.But the photodiode of this kind structure does not still change the substantive characteristics of CMOS technology, and therefore the dark current that reduces is not clearly.
Summary of the invention
In view of above-mentioned existing in prior technology problem, the purpose of this invention is to provide a kind of hole accumulating active picture element and manufacture method thereof of low-substrate leakage current, be produced on the N type silicon substrate, thus the feature of acquisition low-dark current.
The objective of the invention is to be achieved through the following technical solutions:
A kind of hole accumulating active picture element of low-substrate leakage current, main body comprise N type substrate, P+ epitaxial loayer and P type epitaxial loayer; The P+ outer layer growth is on the N substrate, and P type outer layer growth is on the P+ epitaxial loayer; Described P type epitaxial loayer also is provided with the N+ district, forms a PN junction; In the N+ district, also be provided with the P district, form another PN junction.
Also be provided with dark N+ district on the described P type epitaxial loayer, dark N+ district diffuses to the P+ epitaxial loayer; Dark N+ district contacts with the N+ district; And be provided with electrode in the N+ district, this electrode is added with bias voltage.
Also be provided with the N-trap on the described P type epitaxial loayer, growth has grid oxide layer on the N-trap, and also growth has one deck polysilicon layer on grid oxide layer; On the N-trap, also be provided with source-drain area.
Described P type epitaxial loayer is provided with narrow trench isolation regions, and P is located in the district under the narrow trench isolation regions.
A kind of manufacture method of the hole accumulating active picture element based on above-mentioned low-substrate leakage current comprises:
A, on N type substrate epitaxial growth P+ type epitaxial loayer;
B, on P+ type epitaxial loayer epitaxial growth P type epitaxial loayer;
C, phosphonium ion is injected in the P epitaxial loayer 3, through the high annealing of the scheduled time, activate phosphonium ion simultaneously it is become into, form the N+ district;
The transistor of E, generation reading circuit;
F, at the superficial growth layer of silicon dioxide SiO of N-trap
2, inject ion and inject BF
2+, form surperficial P district.
Described step C also comprises:
C1, at P type epitaxial loayer one heat growth layer of silicon dioxide SiO2;
C2, injection phosphonium ion activate phosphonium ion, inject to form dark N+ district.
Described step C1 also comprises: the silicon dioxide SiO of growth
2Layer thickness is controlled at 100 dusts～150 dusts.
Described step D also comprises:
When lead-in wire with dark P+ district ground connection.
Described step e also comprises:
E1, in P type epitaxial loayer, form the N-trap;
E2, the grid oxide layer of on the N-trap, growing;
E3, long one deck polysilicon is layer by layer on grid oxide layer;
E4, on the N-trap, inject boron ion ion and form source-drain area.
Described step F also comprises:
F1, on P type epitaxial loayer, make narrow trench isolation regions;
The superficial growth layer of silicon dioxide SiO of F2, the N-trap below narrow trench isolation regions
2, inject low-yield, heavy dose of ion and inject BF
2+, form surperficial P district.
As seen from the above technical solution provided by the invention, growth one deck P+ type epitaxial loayer on the N substrate of the hole accumulating active picture element of low-substrate leakage current of the present invention, growth one deck P type epitaxial loayer on P+ type epitaxial loayer, in the P epi region, inject one deck N+ district, and in shallow injection one deck P district, N+ district, thereby form two PN junctions, can absorb the injection light of different wave length.What the present invention proposed is a kind of active pixel structure based on N substrate and photodiode, and the hole accumulating active picture element structure of this low-substrate leakage current has effectively reduced dark current, improved quantum efficiency.
Description of drawings
Fig. 1 is the hole accumulating active picture element structural representation one of low-substrate leakage current of the present invention;
Fig. 2 is the hole accumulating active picture element structural representation two of low-substrate leakage current of the present invention;
Fig. 3 is the hole accumulating active picture element manufacture process schematic diagram one of low-substrate leakage current of the present invention;
Fig. 4 is the hole accumulating active picture element manufacture process schematic diagram two of low-substrate leakage current of the present invention;
Fig. 5 is the hole accumulating active picture element manufacture process schematic diagram three of low-substrate leakage current of the present invention;
Fig. 6 is the hole accumulating active picture element manufacture process schematic diagram four of low-substrate leakage current of the present invention;
Fig. 7 is the hole accumulating active picture element manufacture process schematic diagram five of low-substrate leakage current of the present invention.
Embodiment
Core of the present invention has been described a kind of novel active pixel that is applicable to the low-dark current of cmos image sensor, and the most basic characteristics of this kind active pixel are to be produced on the N type silicon substrate, thereby obtains the feature of low-dark current.
The embodiment one of the structure of the hole accumulating active picture element of low-substrate leakage current of the present invention is specially as shown in Figure 1:
Growth one deck P+ type epitaxial loayer 2 on N substrate 1, growth one deck P type epitaxial loayer 3 on P+ type epitaxial loayer 2, injection one deck N+ district 4 P epi region 3 in, and in the N+ district 4 shallow injection one deck P districts 6, thereby form two PN junctions, can absorb the injection light of different wave length.
Also be provided with dark N+ district 5 on described P type epitaxial loayer 3, dark N+ district 5 diffuses to P+ type epitaxial loayer 2, and dark N+ district 5 contacts with N+ district 4.
Change light quantum into optical charge at described two knot PN places, wherein electron accumulation is in N+ district 4, and the hole charge of generation is accumulated in one side near PN junction, P district 6, and the bias voltage of being located at very soon in the N+ district 4 11 siphons away.
Also be provided with N-trap 10 on described P type epitaxial loayer 3, growth has grid oxide layer 8 on the N-trap, and also growth has one deck polysilicon layer 9 on grid oxide layer; On N-trap 10, also be provided with source-drain area and be respectively source electrode 7 and drain electrode 13.Polysilicon layer 9 is provided with transmission grid 12 and grid 14, and electron charge is transported; On transmission grid 12, add a high level, form an inversion layer 8 times, form low potential barrier, thereby electric charge is read into NMOS (N-channel metal oxide semiconductor, Chinese: the source electrode 7 of pipe n channel metal oxide semiconductor) at gate oxide.
The NMOS pipe manufacturer is in P type trap, and the drain electrode of NMOS pipe is 13, generally is connected on the high level, when grid 14 adds a high level NMOS is managed set, source electrode 7 set are high level, when transmission grid 12 are low level, optical charge is read, and changes charge integration into voltage at NMOS pipe source electrode 7 and reads.
The kind embodiment two of the structure of the hole accumulating active picture element of low-substrate leakage current of the present invention as shown in Figure 2, its structure and specific implementation structural similarity shown in Figure 1, difference is that on P type epitaxial loayer 3 are provided with narrow trench isolation regions (shallow trench isolation) 15, and P district 6 is located at narrow trench isolation regions 15 belows.
For the present invention there being further understanding, the manufacture method to the hole accumulating active picture element of low-substrate leakage current of the present invention describes down and again.
With embodiment one is example, and the embodiment of the manufacture craft of the hole accumulating active picture element of low-substrate leakage current of the present invention specifically comprises following making processing procedure:
At first, as shown in Figure 3, epitaxial growth P epitaxial loayer 2 on N type substrate 1, then, epitaxial growth P epitaxial loayer 3 on P+ epitaxial loayer 2 again, the degree of depth that its thickness is slightly larger than the N-trap 10 of back gets final product;
Secondly, as shown in Figure 4, heat growth one deck SiO on P epitaxial loayer 3
2, SiO
2Thickness be 100 dusts～150 dusts, its objective is that reducing P epitaxial loayer 3 is subjected to the damage that ion injects; When the phosphonium ion that injects high-energy, heavy dose to P epitaxial loayer 3, and, behind the activation phosphonium ion, inject the dark N+ of formation district 5 through high annealing; Because P epitaxial loayer 3 is thinner, and dark N+ district 5 is diffused in the P epitaxial loayer 3;
The 3rd, as shown in Figure 5, high-energy, heavy dose of phosphonium ion are injected in the P epitaxial loayer 3, through the high annealing of short time, activate phosphonium ion and simultaneously it are driven in proper depth, form N+ district 4.
The 4th, as shown in Figure 6, generate transistor in the reading circuit, transistorized generation is identical based on the technological process of making PMOS in the CMOS technology with tradition in the reading circuit; At first, in epitaxial loayer 3, form N-trap 10, growth grid oxide layer 8, long one deck polysilicon layer 9 on grid oxide layer 8 injects ion formation source electrode 7 and drain electrode 13 at last and shows;
At last, dark in order to prevent as shown in Figure 7 with driving of the source-drain electrode of PMOS (P-channel metal-oxide-semiconductor), after finishing PMOS technology, avoid long pyroprocess, so, adopt the superficial growth one deck SiO of low-temperature oxidation LTO method at N+4
2, as the protective layer that reduces ion implantation damage, then, low-yield, heavy dose of ion injects BF
2+, form surperficial P district 6, use RTP (Rapid Temperature Process, fast temperature is handled) with its activation.
The technological process specific implementation method of embodiment two manufacture methods of the hole accumulating active picture element of low-substrate leakage current of the present invention, difference narrow trench isolation regions 15 of 3 structures on P type epitaxial loayer with embodiment one, below narrow trench isolation regions 15, inject low-yield, heavy dose of ion BF2+ then, form surperficial P+ district 6, use RTP that it is activated.This low-substrate leakage current hole accumulating active picture element is primarily aimed at deep submicron process, owing to adopt narrow channel isolation technology that sensitization junction area and surface are isolated, can obtain low dark current and high luminous sensitivity.Dark current mainly be to produce by the figure (bulk states) of interfacial state between the silicon/silicon dioxide or silicon substrate.By in surperficial shallow injection one deck P district in N+ district, will separate with the surface in the body, the PN junction that light is changed into electric charge is positioned at semi-conductive body, thereby dark current is reduced.This advantage is mainly by reducing surperficial dangling bonds produce electric charge to light influence.
Dark current mainly be to produce by the figure (bulkstates) of interfacial state between the silicon/silicon dioxide or silicon substrate.In most cases, the interface generation is ten times that produce in the body.Growth one deck P+ type epitaxial loayer on the N substrate, growth one deck P type epitaxial loayer on P+ type epitaxial loayer, in the P epi region, inject one deck N+ district, surperficial shallow injection one deck P district in the N+ district, to separate with the surface in the body, the PN junction that light is changed into electric charge is positioned at semi-conductive body, thereby dark current is reduced, because formed two PN junctions, increased the capacity of store charge simultaneously.Utilize the N substrate can effectively prevent the diffusion of the optical charge between the pixel.The N substrate itself has the effect of picture N+ diffused drain.When pixel itself because of irradiates light too strong the time, the unnecessary electric charge of generation will if do not evacuated, will form disperse (blooming) phenomenon to facing the pixel diffusion mutually.When a DC potential is added in the N substrate, unnecessary electric charge will be collected by substrate, and can not spread to the pixel of facing mutually, thus the diffusing phenomenon of preventing.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (10)
1, a kind of hole accumulating active picture element of low-substrate leakage current is characterized in that, main body comprises N type substrate, P+ epitaxial loayer and P type epitaxial loayer; The P+ outer layer growth is on the N substrate, and P type outer layer growth is on the P+ epitaxial loayer; Described P type epitaxial loayer also is provided with the N+ district, forms a PN junction; In the N+ district, also be provided with the P district, form another PN junction.
2, according to the hole accumulating active picture element of claims 1 described a kind of low-substrate leakage current, it is characterized in that, also be provided with dark N+ district on the described P type epitaxial loayer, dark N+ district diffuses to the P+ epitaxial loayer; Dark N+ district contacts with the N+ district; And be provided with electrode in the N+ district, this electrode is added with bias voltage.
3, according to the hole accumulating active picture element of claims 1 described a kind of low-substrate leakage current, it is characterized in that, also be provided with the N-trap on the described P type epitaxial loayer, growth has grid oxide layer on the N-trap, and also growth has one deck polysilicon layer on grid oxide layer; On the N-trap, also be provided with source-drain area.
According to claims 1,2 or 3 described a kind of active pixels, it is characterized in that 4, described P type epitaxial loayer is provided with narrow trench isolation regions, P is located in the district under the narrow trench isolation regions.
5, a kind of manufacture method of the hole accumulating active picture element based on above-mentioned low-substrate leakage current is characterized in that, comprising:
A, on N type substrate epitaxial growth P+ type epitaxial loayer;
B, on P+ type epitaxial loayer epitaxial growth P type epitaxial loayer;
C, phosphonium ion is injected in the P epitaxial loayer 3, through the high annealing of the scheduled time, activate phosphonium ion simultaneously it is become into, form the N+ district;
The transistor of E, generation reading circuit;
F, at the superficial growth layer of silicon dioxide SiO of N-trap
2, inject ion and inject BF
2+, form surperficial P district.
6, according to the manufacture method of the hole accumulating active picture element of claims 5 described low-substrate leakage currents, it is characterized in that described step C also comprises:
C1, at P type epitaxial loayer one heat growth layer of silicon dioxide SiO2;
C2, injection phosphonium ion activate phosphonium ion, inject to form dark N+ district.
7, according to the manufacture method of the hole accumulating active picture element of claims 6 described low-substrate leakage currents, it is characterized in that described step C1 also comprises: the silicon dioxide SiO of growth
2Layer thickness is controlled at 100 dusts～150 dusts.
8, according to the manufacture method of the hole accumulating active picture element of claims 5 described low-substrate leakage currents, it is characterized in that described step D also comprises:
When lead-in wire with dark P+ district ground connection.
9, according to the manufacture method of the hole accumulating active picture element of claims 5 described low-substrate leakage currents, it is characterized in that described step e also comprises:
E1, in P type epitaxial loayer, form the N-trap;
E2, the grid oxide layer of on the N-trap, growing;
E3, long one deck polysilicon is layer by layer on grid oxide layer;
E4, on the N-trap, inject boron ion ion and form source-drain area.
10, according to the manufacture method of the hole accumulating active picture element of claims 5 described low-substrate leakage currents, it is characterized in that described step F also comprises:
F1, on P type epitaxial loayer, make narrow trench isolation regions;
The superficial growth layer of silicon dioxide SiO of F2, the N-trap below narrow trench isolation regions
2, inject low-yield, heavy dose of ion and inject BF
2+, form surperficial P district.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101459184B (en) * | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | System and method for sensing image on CMOS |
| CN103337509A (en) * | 2013-06-13 | 2013-10-02 | 中国兵器工业集团第二一四研究所苏州研发中心 | Anti-dispersion structure and manufacture technology of electron multiplying charge-coupled device(EMCCD) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| NL1011381C2 (en) * | 1998-02-28 | 2000-02-15 | Hyundai Electronics Ind | Photodiode for a CMOS image sensor and method for its manufacture. |
| US6084259A (en) * | 1998-06-29 | 2000-07-04 | Hyundai Electronics Industries Co., Ltd. | Photodiode having charge transfer function and image sensor using the same |
| JP4604296B2 (en) * | 1999-02-09 | 2011-01-05 | ソニー株式会社 | Solid-state imaging device and manufacturing method thereof |
| JP2003060191A (en) * | 2001-08-17 | 2003-02-28 | Sony Corp | Solid-state image pickup element and manufacturing method therefor |
| US6501109B1 (en) * | 2001-08-29 | 2002-12-31 | Taiwan Semiconductor Manufacturing Company | Active CMOS pixel with exponential output based on the GIDL mechanism |
| CN100474601C (en) * | 2005-07-12 | 2009-04-01 | 北京思比科微电子技术有限公司 | Low-dark current active picture element adapted to CMOS image sensor and producing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101459184B (en) * | 2007-12-13 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | System and method for sensing image on CMOS |
| CN103337509A (en) * | 2013-06-13 | 2013-10-02 | 中国兵器工业集团第二一四研究所苏州研发中心 | Anti-dispersion structure and manufacture technology of electron multiplying charge-coupled device(EMCCD) |
| CN103337509B (en) * | 2013-06-13 | 2015-10-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | The anti-disperse structure of electron multiplying charge coupled apparatus and manufacture craft |
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