CN1641883A - CMOS image sensor and method for fabricating the same - Google Patents

CMOS image sensor and method for fabricating the same Download PDF

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CN1641883A
CN1641883A CNA2004101026876A CN200410102687A CN1641883A CN 1641883 A CN1641883 A CN 1641883A CN A2004101026876 A CNA2004101026876 A CN A2004101026876A CN 200410102687 A CN200410102687 A CN 200410102687A CN 1641883 A CN1641883 A CN 1641883A
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ion
semiconductor substrate
device isolation
impurity ion
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CN100530663C (en
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韩昌勋
金凡植
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DongbuAnam Semiconductor Inc
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DongbuAnam Semiconductor Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

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Abstract

A CMOS image sensor and a method for fabricating the same are disclosed, in which the boundary between an active region and a field region is not damaged by ion implantation. The method for fabricating a CMOS image sensor includes forming a trench in a first conductive type semiconductor substrate, forming a first conductive type heavily doped impurity ion region in the semiconductor substrate at both sides of the trench, forming a device isolation film by interposing an insulating film between the trench and the device isolation, sequentially forming a gate insulating film and a gate electrode on the semiconductor substrate, and forming a second conductive type impurity ion region for a photodiode in the semiconductor substrate between the gate electrode and the device isolation film.

Description

Cmos image sensor and manufacture method thereof
The application requires the priority of the korean patent application No.P2003-101553 of submission on December 31st, 2003, and this patent application is incorporated this paper into through quoting.
Technical field
The present invention relates to complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor and manufacture method thereof, more specifically, the present invention relates to the border between active region and field region wherein and injected cmos image sensor and the manufacture method of damaging thereof by ion.
Background technology
In general, imageing sensor is meant the semiconductor device that light signal is converted to the signal of telecommunication.Imageing sensor is divided into charge-coupled device (CCD) and complementary MOS (CMOS) imageing sensor.CCD conversion and store charge charge carrier are in capacitor, and the state of capacitor is that each mos capacitance device is close mutually.Cmos image sensor adopts switching mode, and it is based on peripheral circuit such as control circuit and the according to pixels several output signals that MOS transistor are provided and detect MOS transistor of signal processing circuit use CMOS technology.
CCD has some shortcomings.Be that CCD requires very big power consumption and its type of drive complexity.And, can not in the CCD chip, realize signal processing circuit owing to need many masks (mask) treatment step.
In order to solve these shortcomings, carried out research recently based on the cmos image sensor of sub-micron CMOS technology.In cmos image sensor, by in unit pixel, forming photodiode and MOS transistor and obtaining image with the switching mode detection signal.In this case, because used the CMOS technology, need power consumption still less.And owing to need 20 masks, treatment step is simpler than CCD, and CCD needs 30 to 40 masks.Therefore, signal processing circuit can be integrated in the single chip.This makes the various application of small-size product and this product become possibility.
With reference now to Fig. 1 and Fig. 2, the cmos image sensor of prior art is described.Fig. 1 and Fig. 2 are the circuit diagram and the layouts of the unit pixel structure of explanation prior art cmos image sensor.Although can use 3 or more transistor constituting cmos image sensor, for convenience's sake, will describe based on 3 transistorized cmos image sensors.
As depicted in figs. 1 and 2, the unit pixel 100 of cmos image sensor comprises photodiode 110 and three nmos pass transistors.Photodiode 110 is as transducer.In three transistors, the optical charge that reset transistor Rx 120 conversion produces in photodiode 110 and with these charge discharges with detection signal.Another driving transistors Dx 130 is as source follower.Another selects transistor Sx 140 to be used for switching and addressing.
Therebetween, in the imageing sensor of unit pixel, photodiode 110 is used as the source of reset transistor Rx 120 to promote charge conversion.For this reason, the procedure of processing of the imageing sensor of manufacturing cell's pixel comprises the step of light or heavy implanting impurity ion in the zone that comprises some photodiode, as shown in Figure 2.
With reference to the procedure of processing of figure 3A to Fig. 3 C description manufacturing with the imageing sensor of the corresponding unit pixel of part of the A-A ' line of Fig. 2.For reference, the solid line of Fig. 2 is represented active region 160.
As shown in Figure 3A, gate insulating film 122 and gate electrode 123 are formed on the P type semiconductor substrate 101 successively, wherein form device isolation film 121 by shallow-trench isolation (STI) method.In this case, although do not illustrate, P type epitaxial loayer can be pre-formed in P type semiconductor substrate 101.Subsequently, on Semiconductor substrate 101 whole surfaces, deposit photoresist film.Form the photoresist pattern by photoetching process then, to determine photodiode area.At this moment, gate electrode can not exposed by the photoresist pattern.
In this state, with lightly doped foreign ion, for example N type foreign ion is injected in the whole surface of Semiconductor substrate, forms lightly doped impurity ion region with desired depth in Semiconductor substrate 101.
Subsequently, shown in Fig. 3 B, form another photoresist pattern 125, and make with photoresist that pattern 125 is formed for the light dope impurity ion region of LDD structure as the ion injecting mask in the drain region of gate electrode.At this moment, lightly doped impurity ion region is not exposed by photoresist pattern 125.
After this, shown in Fig. 3 C, at the side-walls formation separator 126 of gate electrode 123, at N type impurity ion region n -Last formation p type impurity ion district P0.Therefore, finished the procedure of processing that forms photodiode.Finish under the state of photodiode,, forming heavily doped impurity ion region n the heavily doped foreign ion drain region of injection grid electrode 123 optionally +At last, finish procedure of processing corresponding to the part of the A-A ' line of Fig. 2.
In the method for the cmos image sensor of making prior art, lightly doped foreign ion is injected in active region and the device isolation film, form photodiode.At this moment, because the ion that injects in the border between device isolation film and active region produces defective in corresponding substrate.
Produce electric charge or hole carriers and electric charge-hole-recombination district is provided because ion injects this defective that produces, thereby increase the leakage current of photodiode.Promptly produce dark current, wherein electronics is transferred to the floating diffusion region that is under the state that does not have light from photodiode.Dark current is caused by various defectives, and these defectives result near the silicon face, device isolation film and P 0Between boundary, device isolation film and n -Between boundary, at P 0With n -Between boundary, p type island region territory, n type zone or dangling bonds.Dark current also worsens the low photocurrent versus light intensity of cmos image sensor.
In U.S. Patent No. 6,462, in 365, in corresponding to the part of photodiode area, form device isolation film and transmission gate, to reduce because photodiode decreases the dark current that ring produces.In addition, although proposed to reduce other the whole bag of tricks of dark current, do not have to solve because ion is infused in the effective ways of the defective of the boundary generation between device isolation film and the active region.
Summary of the invention
Therefore, the present invention relates to cmos image sensor and manufacture method thereof, can obviously avoid because one or more problems that the limitation of prior art and shortcoming produce.
An object of the present invention is to provide a kind of cmos image sensor and manufacture method thereof, wherein the border between active region and field region is not injected by ion and is damaged.
Other advantage of the present invention, purpose and characteristic are set forth in the following description book, will become apparent for those skilled in the art after having studied hereinafter, perhaps can understand from the practice of the present invention.Purpose of the present invention and other advantage can realize by the structure that particularly points out in specification and claim and accompanying drawing.
In order to realize these purposes and other advantage, and according to purpose of the present invention, implement and general description as this paper, cmos image sensor comprises the first conductive-type semiconductor substrate with the active region that is limited by the field region, the photodiode that in the predetermined portions of active region, forms, along the device isolation film that the photodiode periphery forms, the heavily doped impurity ion region of first conductivity type that forms in the device isolation film both sides.
On the other hand, a kind of method of making cmos image sensor is included in the first conductive-type semiconductor substrate and forms groove, in the Semiconductor substrate of groove both sides, form the heavily doped impurity ion region of first conductivity type, form device isolation film by between groove and device isolation, inserting dielectric film, on Semiconductor substrate, form gate insulating film and gate electrode successively, form the second conductive-type impurity ion district of photodiode in the Semiconductor substrate between gate electrode and device isolation film.
Preferably, the step that forms groove is included on the Semiconductor substrate deposited sacrificial (sacrificing) oxidation film and hard mask layer successively, form the opening of sacrificial oxide film and hard mask layer in the field region of Semiconductor substrate, to expose the substrate surface in the opening and to use hard mask layer in the substrate that exposes, to form groove as etching mask.
Preferably, the step that forms the first conductivity type heavy doping impurity ion region comprises with respect to substrate and injects the first conductivity type heavy doping foreign ion with pre-determined tilt angle θ to the one or both sides of groove.
Preferably, tiltangle depends on tan θ=W/ (H 1+ H 2), wherein W represents the width between device isolation film and the gate electrode, H 1Represent the degree of depth of the second conductive-type impurity ion of photodiode region, H 2Representative is used for the height of the photoresist pattern of first conductivity type half or heavy doping ion injection.
Preferably, the width of the heavily doped impurity ion region of first conductivity type is 100 to 300 .
Preferably, the first conductive-type impurity ion is B ion or BF 2Ion.
Preferably, the first conductivity type heavy doping impurity ion region is 1 * 10 by implantation concentration 12To 1 * 10 15Individual ion/cm 2Ion form.
When form surrounding the device isolation film of photodiode, owing to be pre-formed n with photodiode in the groove both sides that are used for device isolation film -The heavy doping impurity ion region of the P-type conduction type that the zone is opposite is because the n of device isolation film and photodiode -The damage ring on the border between the district and the dark current that causes can minimize.
Should be appreciated that above general description of the present invention and following detailed description are exemplary and indicative, aim to provide further explanation of the present invention.
Description of drawings
Be used to provide description of drawings embodiment of the present invention of further understanding of the present invention and introducing and formation the application part, and be used from explanation principle of the present invention with specification one.In the accompanying drawings:
Fig. 1 is the circuit diagram of the unit pixel structure of explanation prior art cmos image sensor;
Fig. 2 is the layout of the unit pixel of explanation prior art cmos image sensor;
Fig. 3 A to Fig. 3 C is along the A-A ' line among Fig. 2, and the sectional view of the procedure of processing of making the prior art cmos image sensor is described;
Fig. 4 is the sectional view of explanation according to the structure of cmos image sensor of the present invention;
Fig. 5 A to Fig. 5 G is that the sectional view according to the procedure of processing of cmos image sensor of the present invention is made in explanation; With
Fig. 6 is the layout of explanation according to the unit pixel of cmos image sensor of the present invention.
Embodiment
Describe the preferred embodiments of the invention now in detail, embodiment shows in the accompanying drawings.As possible, all using identical Reference numeral to represent identical or similar parts in the accompanying drawing.
Hereinafter, will be described below according to cmos image sensor of the present invention and manufacture method thereof.
Fig. 6 is the layout of explanation according to the unit pixel of cmos image sensor of the present invention.As shown in Figure 6, the active region is limited by the field region.The active region is corresponding to the zone in the solid line in Fig. 6 423.Arrange the gate electrode of reset transistor Rx 120, the gate electrode of driver transistor Dx 130 and the gate electrode of selection transistor Sx 140, cover the predetermined portions of active region.Photodiode PD forms in a side of active region.The impurity ion region identical, for example P type heavy doping impurity ion region P with the Semiconductor substrate conduction type +440 inboards along photodiode form in substrate.That is to say that device isolation film and the boundary between the photodiode region in the field region form P +Type zone 440.
With reference to figure 4 cross section structure of cmos image sensor along the B-B ' line among Fig. 6 described.
As shown in Figure 4, at P ++Form P on the N-type semiconductor N substrate 401 -The type epitaxial loayer.In the field region of Semiconductor substrate 401, form device isolation film 406a, come the active region of isolation of semiconductor substrate 401.Gate insulating film 122 and gate electrode 123 are formed on the predetermined portions of active region successively, and separator 129 is formed on the side-walls of gate electrode 123 and gate insulating film 122.
Limit photodiode region by gate electrode 123 and device isolation film 406a.Photodiode region has at N type light dope impurity ion region n -409 and substrate 401 under P type epitaxial loayer between the PN junction structure.And, the drain region n with LDD structure +Be formed in the substrate 401 of gate electrode 123 1 sides.
Therebetween, P type heavy doping impurity ion region p +440 are formed on the boundary between device isolation film 406a and the photodiode region.As the N type light dope impurity ion region n that is formed for photodiode region -409 o'clock, p type island region territory p +440 prevent that border device isolation film 406a and photodiode region from being injected damage by ion, and electronics-hole-recombination zone is provided.
Following more detailed description preparation is according to the method for above-mentioned cmos image sensor of the present invention.
Shown in Fig. 5 A, by the high-temperature thermal oxidation process, according to the thickness of 40 to 150 in Semiconductor substrate 401, p type single crystal silicon substrate P for example ++- SubstrateOn 401, growth sacrificial oxide film 402.P -Type epitaxial loayer P -- ExtensionCan be pre-formed in Semiconductor substrate 401.P -The type epitaxial loayer is the deep depletion region that forms in photodiode, collects the ability of optical charge and improves the light sensitivity so that improve low voltage photodiode.
Subsequently, by thickness on sacrificial oxide film 402 the deposited sacrificial nitride film 403 of low-pressure chemical vapor deposition according to 500 to 1500 .Sacrifice property nitride film 403 is as hard mask layer.Sacrificial oxide film 402 will discharge the stress of Semiconductor substrate 401 and sacrifice property nitride film 403.Sacrifice property nitride film 403 is used as etching mask layer when forming groove, and is used as etch stop film in CMP (Chemical Mechanical Polishing) process afterwards.
After this, on the active region of substrate 401, form photoresist pattern (not shown), make the opening of photoresist pattern be positioned the field region of substrate 401.The complete etching of dry ecthing method that sacrificial oxide film 402 in the opening and sacrifice property nitride film 403 usefulness have the anisotropic etching characteristic, for example making with photoresist, therefore pattern has exposed the field region of substrate 401 as reactive ion etching (RIE) method of etching mask.Remove the photoresist pattern then.
Subsequently, use remaining sacrifice nitride film 403 as etching mask layer by the substrate 401 of RIE method by the field region that shallow deep etching exposed of 3000 .Therefore, in the field region of substrate 401, form groove 404.
In this state, shown in Fig. 5 B, use remaining sacrifice nitride film 403, by 1 * 10 as the ion injecting mask 12To 1 * 10 15Individual ion/cm 2Concentration with predetermined angle of inclination with P type heavy doping foreign ion, for example B ion or BF 2Ion injects substrate 401.Therefore, in the substrate 401 of groove 404 1 sides, form P type heavy doping impurity ion region p +440.Preferably, the width d in p type island region territory 440 is 100 to 300 .
At this moment, width W, its depth H of consideration such as groove 404 2Height H with sacrificial oxide film 402 on the substrate 401 and sacrifice property nitride film 403 1Wait some factors to determine P +The ion injector angle in type zone.Relation between these factors is expressed as follows.
tanθ＝W/(H 1+H 2)
P +Type zone 440 is formed on the n-district of photodiode and the boundary between the device isolation film 406a, to reduce dark current.In more detail, inject the defective that causes by the foreign ion n-of photodiode and be created in boundary between device isolation film 406a and the photodiode area.This defective produces electric charge carrier, and electric charge carrier transfers to floating diffusion region, thereby causes dark current.P +The type district catches electric charge carrier and prevents that in advance dark current from producing.
Therebetween, more than the ion injection of groove 404 1 sides is carried out once by specific direction with certain inclination angle.Then, going up the opposite side that P type heavy doping foreign ion is injected into groove 404 with certain inclination angle in the opposite direction with above-mentioned certain party.Therefore, in substrate 401, form P type heavy doping impurity ion region 440 in the both sides of groove 404 with mutually the same shape.
Form in the both sides of groove 404 under the state of P type heavy doping impurity ion region 440, shown in Fig. 5 C, by the thickness of 200 to the 400 dielectric film of growing on Semiconductor substrate 401 in groove 404, for example thermal oxide film 405 by thermal oxidation process.After forming groove 404, thermal oxide film 405 will be removed by plasma and P type heavy doping ion and inject the damage that causes.In more detail, the dangling bonds that exist in the atomic arrangement in the groove 404 of thermal oxide film 405 removals on Semiconductor substrate 401.And thermal oxide film 405 is used for improving junction characteristic with the device isolation film 406a that forms afterwards.Because the optional thermal oxide film 405 that forms, can not form thermal oxide film 405 and carry out subsequent process.
Shown in Fig. 5 D, the dielectric film 406 that is used for device isolation is deposited on thickly and comprises groove 404 and on the substrate 401 whole surfaces of the sacrifice nitride film 403 of groove 404 outsides, so that fully cover groove 404.At this moment, preferably do not form the space in the dielectric film in groove 404 406.According to the design principle of Semiconductor substrate, dielectric film 406 can pass through O 3-tetraethyl orthosilicate (O 3-TEOS) atmospheric pressure chemical vapour deposition (APCVD) method or high density plasma CVD (HDP CVD) method deposition.
Described dielectric film 406 based on single layer structure, dielectric film can also have sandwich construction, for example double-deck oxide and nitride film.
Subsequently, shown in Fig. 5 E, dielectric film 406 is by the chemical mechanical polishing method polishing, so that concordant with sacrifice property nitride film 403.Keep dielectric film 406 densely by the high-temperature thermal annealing process then.After this, shown in Fig. 5 F, sacrifice property nitride film 403 and sacrificial oxide film 402 are removed by the etch of using HF solution, form device isolation film 406a in groove 404.
Under the state of the device isolation film 406a that as above forms cmos image sensor, make the exemplary process steps of cmos image sensor.Form device isolation film 406a, surround the photodiode area of Fig. 6.
Shown in Fig. 5 G, gate insulating film 122 and gate electrode 123 are formed on the predetermined portions of active region successively.Gate electrode 123 can be one of reset transistor, and under the situation based on 4 transistorized cmos image sensors, corresponding with one of conversioning transistor.The light dope impurity ion region forms after can injecting at the foreign ion of photodiode.
In this state, photoresist film is deposited on the whole surface of substrate 401, and patterning optionally, to form the photoresist pattern of determining photodiode area.That is to say that the substrate surface between gate electrode 123 and device isolation film 406a is exposed by the photoresist pattern.Then, the whole surface with light dope foreign ion injection substrate 401 forms photodiode.Therefore, be formed for the light dope impurity ion region n of photodiode -409, and finish and have the P that contains substrate 401 -Type epitaxial loayer P -- ExtensionThe photodiode of PN junction structure.
Because light dope impurity ion region n -So 409 adjacent device barrier film 406a are may be in the problem of the generation of the boundary between device isolation film 406a and the photodiode area such as electronics or holoe carrier and leakage current.But, because P type heavy doping impurity ion region forms and provides electronics-hole-recombination zone in device isolation film 406a one side in advance, therefore by forming n -The ion in zone injects this class problem that causes and can avoid in advance.
After this, although do not illustrate, P type half impurity ion is injected the substrate 401 of photodiode area, and form floating diffusion region.Then, finally finished the method for making according to cmos image sensor of the present invention.
As mentioned above, this cmos image sensor and manufacture method thereof have the following advantages.
In the process of the device isolation film that form to surround photodiode, owing to be pre-formed n with photodiode in the groove both sides of device isolation film -Distinguish opposite P type heavy doping impurity ion region, so by the n of device isolation film and photodiode -The dark current that interface failure between the district causes can minimize.
It will be apparent to those skilled in the art that and to carry out various improvement and variation in the present invention.Therefore the present invention is intended to cover improvement of the present invention and the variation that provides by in claims and the equivalent scope thereof.

Claims (10)

1. cmos image sensor comprises:
The first conductive-type semiconductor substrate with active region of determining by the field region;
The photodiode that in the predetermined portions of active region, forms;
Device isolation film along the formation of photodiode periphery; With
The first conductivity type heavy doping impurity ion region that forms in the device isolation film both sides.
2. the cmos image sensor of claim 1, wherein the width of the first conductivity type heavy doping impurity ion region is 100 to 300 .
3. the cmos image sensor of claim 1, wherein the first conductive-type impurity ion is B ion or BF 2Ion.
4. method of making cmos image sensor comprises:
In the first conductive-type semiconductor substrate, form groove;
In the Semiconductor substrate of groove both sides, form the first conductivity type heavy doping impurity ion region;
Form device isolation film by between groove and device isolation, inserting dielectric film;
On Semiconductor substrate, form gate insulating film and gate electrode successively; With
Form the second conductive-type impurity ion district of photodiode in the Semiconductor substrate between gate electrode and device isolation film.
5. the method for claim 4, the step that wherein forms groove is included on the Semiconductor substrate deposited sacrificial oxidation film and hard mask layer successively, form the opening of sacrificial oxide film and hard mask layer in the field region of Semiconductor substrate, to expose the substrate surface in the opening and to use hard mask layer in the substrate that exposes, to form groove as etching mask.
6. the method for claim 4, the step that wherein forms the first conductivity type heavy doping impurity ion region comprises with respect to substrate injects the first conductivity type heavy doping foreign ion with pre-determined tilt angle θ to the one or both sides of groove.
7. the method for claim 6, wherein tiltangle depends on tan θ=W/ (H 1+ H 2), W represents the width between device isolation film and the gate electrode, H 1Represent the degree of depth of the second conductive-type impurity ion of photodiode region, H 2Representative is used for the height of the photoresist pattern of first conductivity type half or heavy doping ion injection.
8. the method for claim 4, wherein the width of the first conductivity type heavy doping impurity ion region is 100 to 300 .
9. the method for claim 4, wherein the first conductive-type impurity ion is B ion or BF 2Ion.
10. the method for claim 4, wherein the first conductivity type heavy doping impurity ion region is 1 * 10 by implantation concentration 12To 1 * 10 15Individual ion/cm 2Ion form.
CNB2004101026876A 2003-12-31 2004-12-27 CMOS image sensor and method for fabricating the same Expired - Fee Related CN100530663C (en)

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