CN108511476A - Back side illumination image sensor and forming method thereof - Google Patents
Back side illumination image sensor and forming method thereof Download PDFInfo
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- CN108511476A CN108511476A CN201810517065.1A CN201810517065A CN108511476A CN 108511476 A CN108511476 A CN 108511476A CN 201810517065 A CN201810517065 A CN 201810517065A CN 108511476 A CN108511476 A CN 108511476A
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- 238000005286 illumination Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 238000000926 separation method Methods 0.000 claims abstract description 51
- 238000005036 potential barrier Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 36
- 230000001105 regulatory effect Effects 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000003989 dielectric material Substances 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000012780 transparent material Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- WUNIMIODOAGQAW-UHFFFAOYSA-N [O-2].[Ba+2].[Ti+4] Chemical compound [O-2].[Ba+2].[Ti+4] WUNIMIODOAGQAW-UHFFFAOYSA-N 0.000 claims description 3
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- CZXRMHUWVGPWRM-UHFFFAOYSA-N strontium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Sr+2].[Ba+2] CZXRMHUWVGPWRM-UHFFFAOYSA-N 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 184
- 238000003384 imaging method Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000003574 free electron Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007792 gaseous phase Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000000574 ganglionic effect Effects 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of back side illumination image sensor and forming method thereof, method includes：Semiconductor substrate is provided, the semiconductor substrate includes pixel region and isolated area, and the semiconductor substrate has first surface；Isolated groove is formed in the semiconductor substrate of the isolated area, the top of the isolated groove is located at the first surface；Conductive layer is formed in the isolated groove side wall and bottom surface；Separation layer, the full isolated groove of separation layer filling are formed in the conductive layer surface.The method improves the performance of back side illumination image sensor.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of back side illumination image sensor and forming method thereof.
Background technology
Imaging sensor is a kind of semiconductor devices converting optical signal into electric signal.Imaging sensor is divided into complementary gold
Belong to oxide (CMOS) imaging sensor and charge coupling device (CCD) imaging sensor.Cmos image sensor has technique
Simply, be easy to integrated other devices, small, light-weight, small power consumption and it is at low cost the advantages that.Therefore, with image sensing skill
The development of art, cmos image sensor replace ccd image sensor to be applied in each electronic product more and more.Currently,
Cmos image sensor has been widely used for static digital camera, DV, medical photographic device and automobile-used camera shooting
Device etc..
Cmos image sensor includes preceding illuminated (FSI) imaging sensor and back-illuminated type (BSI) imaging sensor.In back-illuminated
In formula imaging sensor, light is from the light sensitive diode in the back surface incident to imaging sensor of imaging sensor, thus by light
Electric energy can be converted into.
However, the performance of existing back side illumination image sensor is to be improved.
Invention content
The technical problem to be solved by the present invention is to provide a kind of back side illumination image sensors and forming method thereof, reduce back-illuminated type
The dark current of imaging sensor improves the performance of back side illumination image sensor.
In order to solve the above technical problems, the present invention provides a kind of forming method of back side illumination image sensor, including：It provides
Semiconductor substrate, the semiconductor substrate include pixel region and isolated area, and the semiconductor substrate has first surface；Described
Isolated groove is formed in the semiconductor substrate of isolated area, the top of the isolated groove is located at the first surface；It is described every
Conductive layer is formed from recess sidewall and bottom surface；Separation layer, the full institute of separation layer filling are formed in the conductive layer surface
State isolated groove.
Optionally, the conductive layer is transparent material, and the visible light transmittance rate of the transparent material is more than 90 percent.
Optionally, the material of the conductive layer includes indium tin oxide material.
Optionally, the first separation layer, the material of first separation layer are also formed between conductive layer and semiconductor substrate
Material includes silica.
Optionally, the conductive layer is also located at the semiconductor substrate first surface of pixel region.
Optionally, the thickness of the conductive layer is 50 angstroms~500 angstroms.
Optionally, it after forming the first separation layer, is formed before conductive layer, further includes：In the first insulation surface shape
At potential barrier regulating course.
Optionally, the material of the potential barrier regulating course is height-K dielectric materials.
Optionally, the height-K dielectric materials include：Hafnium oxide, zirconium oxide, hafnium silicon oxide, lanthana, zirconium silicon oxide, oxygen
Change titanium, tantalum oxide, strontium barium oxide titanium, barium monoxide titanium, strontium oxide strontia titanium or aluminium oxide.
Optionally, the semiconductor substrate further includes the second surface opposite with first surface, and photosensitive structure is located at pixel
In the semiconductor substrate in area, and the second surface exposes the photosensitive structure.
Optionally, the semiconductor substrate also has logic area, after forming the separation layer, in the first table of semiconductor substrate
Form the conductive gasket that is electrically connected to each other and shielding grid layer on face, the conductive gasket is located at the semiconductor substrate the of logic area
One surface, the shielding grid layer are located at the conductive layer surface of isolated area, and the conductive layer is electrically connected with shielding grid layer.
Optionally, after forming conductive gasket and shielding grid layer, further include：It is formed and is filtered between the shielding grid layer
Layer, the filter layer are located at the semiconductor substrate first surface of pixel region；Lens jacket is formed in the filter surfaces.
Optionally, further include：The conductive layer with negative potential for connecting.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
In the forming method for the back side illumination image sensor that technical solution of the present invention provides, conduction is formed in isolated groove
Layer, when applying negative voltage on the conductive layer, the conductive layer has negative electrical charge, so as to cause positive charge at isolated groove bottom
The semiconductor substrate surface of portion and side wall accumulates, and generates potential barrier so that the table of the semiconductor substrate of isolated groove bottom and side wall
Face free electron is adsorbed, and can not move, is compound, therefore dark current reduces, so that the performance of back side illumination image sensor
It gets a promotion.
Further, the conductive layer is also located at pixel region semiconductor substrate first surface, so as to cause positive charge in picture
Plain area's semiconductor substrate first surface accumulation, generates potential barrier so that the free electron quilt of pixel region semiconductor substrate first surface
Absorption, can not move, is compound, therefore dark current reduces, so that the performance of back side illumination image sensor gets a promotion.
Further, the conductive layer is transparent material, can be formed in semiconductor substrate surface, is born when conductive layer applies
When potential, positive charge accumulation is generated in semiconductor substrate surface, generates potential barrier so that pixel region semiconductor substrate first surface
Free electron is adsorbed, and can not move, is compound, therefore dark current reduces, so that the performance of back side illumination image sensor obtains
To promotion.
Further, when negative voltage is applied to conductive layer, conductive layer has negative electrical charge, and the material of potential barrier regulating course is height
K dielectric materials, it may have negative electrical charge, then the pixel region semiconductor substrate first surface covered by potential barrier regulating course and conductive layer with
And the semiconductor substrate surface of isolated groove bottom and side wall generates the accumulation relative increase of positive charge so that the pixel region half
Conductor substrate first surface and the semiconductor substrate surface free electron of isolated groove bottom and side wall are adsorbed, Wu Fayi
It is dynamic, compound, therefore dark current reduces, so that the performance of back side illumination image sensor gets a promotion.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of back side illumination image sensor；
Fig. 2 to Fig. 8 is the structural schematic diagram of back side illumination image sensor forming process in one embodiment of the invention.
Specific implementation mode
As described in background, the performance of the back side illumination image sensor of the prior art is poor.
With reference to figure 1, a kind of forming method of back-illuminated type image sensor, including：Substrate is provided, the substrate includes partly leading
Body substrate 100, the semiconductor substrate 100 include pixel region, and the semiconductor substrate 100 has opposite first surface 101
With 102 He of second surface, there is photosensitive structure 110 in 100 second surface 102 of semiconductor substrate of the pixel region and expose
100 first surface 101 of semiconductor substrate of photosensitive structure 110, the pixel region is interior with isolated groove, the isolated groove position
Between neighboring photosensitive structure 110；In the isolated groove of the pixel region and 100 first surface of semiconductor substrate, 101 surface
Form the first separation layer 103；After forming the first separation layer 103, potential barrier regulating course is formed on 103 surface of the first separation layer
104；After forming potential barrier regulating course 104,104 surface of potential barrier regulating course in the isolated groove forms separation layer 105, described
The full isolated groove of the filling of separation layer 105；Shielding grid layer 120, the shielding are formed in 105 top surface of the separation layer
Grid layer also 104 surface of covering part potential barrier regulating course.
The potential barrier regulating course 104 is located in isolated groove and 100 first surface 102 of semiconductor substrate, the potential barrier tune
The material of ganglionic layer 104 is high K dielectric material, and the high K dielectric material has partial negative charge, positive charge is enabled to partly to lead
100 surface of semiconductor substrate of 100 first surface 102 of body substrate and isolated groove bottom and side wall accumulates, and generates potential barrier, makes
Obtain the free electron on 100 surface of semiconductor substrate of 100 first surface 102 of semiconductor substrate and isolated groove bottom and side wall
It is adsorbed, can not move, is compound, therefore dark current reduces, but the negative electrical charge in high K dielectric material is limited, the positive electricity of attraction
Lotus is also limited, and the potential barrier of generation is relatively low, therefore the effect for reducing dark current is limited, and the performance of back side illumination image sensor needs to be carried
It is high.
The present invention, conductive layer is formed in isolated groove side wall and bottom surface, applies negative voltage in the conductive layer so that
Positive charge is accumulated in the semiconductor substrate surface of isolated groove bottom and side wall, generates potential barrier, isolated groove bottom and side wall
Semiconductor substrate surface is difficult to generate dislocation charge, and to reduce dark current, the method improves back side illumination image sensor
Performance.
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 2 to Fig. 8 is the structural schematic diagram of back side illumination image sensor forming process in one embodiment of the invention.
Referring to FIG. 2, providing semiconductor substrate 200.
The semiconductor substrate 200 includes pixel region and isolated area, and the isolated area is around pixel region；The semiconductor lining
Bottom 200 further includes logic area, is isolated by isolated area between the logic area and the pixel region.
In the present embodiment, the semiconductor substrate 200 includes pixel region A, isolated area B and logic area C, and isolated area B is surround
Pixel region A, and isolated area B is between pixel region A and logic area C.
The semiconductor substrate 200 has first surface 201, and the semiconductor substrate 200 further includes and first surface 201
Opposite second surface 202, photosensitive structure 210 are located in the semiconductor substrate 200 of pixel region A, and the second surface exposes
Go out the photosensitive structure 210.
In the present embodiment, the photosensitive structure 210 is photodiode.
Include photo-electric conversion element in the present embodiment, in the semiconductor substrate 200 in the pixel region A, the photoelectricity turns
The logic circuit device that element includes photosensitive structure 210 and 200 second surface 202 of semiconductor substrate in pixel region A is changed,
The logic circuit device includes gate structure, capacitance, resistance or inductance.
In the present embodiment, 200 second surface of the semiconductor substrate is formed with interconnection structure, the interconnection structure be located at
Logic circuit device electrical connection in pixel region A, the interconnection structure also by conductive structure in logic area C with it is follow-up
The conductive gasket of formation is electrically connected.
In the present embodiment, the material of the semiconductor substrate 200 is monocrystalline silicon.The semiconductor substrate 200 can also be
Polysilicon or non-crystalline silicon.The material of the semiconductor substrate 200 can also be the semi-conducting materials such as germanium, SiGe, GaAs.Institute
It can also be semiconductor-on-insulator structure to state semiconductor substrate 200, the semiconductor-on-insulator structure include insulator and
The material of semiconductor material layer on insulator, the semiconductor material layer includes silicon, germanium, SiGe, GaAs or indium gallium
The semi-conducting materials such as arsenic.
With continued reference to Fig. 2, isolated groove 203 is formed in the semiconductor substrate 200 of the isolated area B, the isolation is recessed
The top of slot 203 is located at the first surface 201.
The isolated groove 203 is between neighboring photosensitive structure 210.
The forming method of the isolated groove 203 includes：Original mask layer is formed on 200 surface of the semiconductor substrate
(not shown)；Patterned layer (not shown) is formed in the original mask layer surface, the patterned layer expose portion is initially covered
Film layer etches the original mask layer, exposes semiconductor substrate surface using the patterned layer as mask, is served as a contrast in semiconductor
Bottom surface forms mask layer (not shown)；Using the mask layer as mask, the semiconductor substrate 200 is performed etching to form institute
State isolated groove 203.
The isolated groove 203 is located in the semiconductor substrate 200 of isolated area B.
The mask layer protects 200 first surface of semiconductor substrate of pixel region A and logic area C when forming isolated groove
201 surfaces.
The material of the patterned layer is photoresist.
In the present embodiment, after forming isolated groove, the part mask layer is removed, semiconductor in pixel region A is exposed and serves as a contrast
The first surface 201 at bottom 200, subsequently in pixel region A, the first surface 201 of semiconductor substrate 200 forms conductive layer.
In other embodiment, the mask layer is not removed, only forms conductive layer in isolated groove.
Referring to FIG. 3, in interior 200 first table of semiconductor substrate with pixel region A of isolated groove 203 of the isolated area B
201 surface of face forms the first separation layer 204.
First separation layer 204 covers 203 bottom surface of isolated groove and sidewall surfaces.
First separation layer 204 is as the conductive layer being subsequently formed or the surface buffer of potential barrier regulating course and semiconductor substrate
Layer improves the contact condition of semiconductor substrate and potential barrier regulating course and conductive layer.
The material of first separation layer 204 includes：Silica, silicon nitride or silicon oxynitride
In the present embodiment, the material of first separation layer 204 is silica.
The thickness of first separation layer 204 is 10 angstroms~100 angstroms.
First separation layer is more than 100 angstroms, and the first separation layer 204 can absorb excessive incident light, lead to photosensitive structure 210
The luminous energy of reception declines, so that back side illumination image sensor performance declines.
The technique for forming first separation layer 204 includes：Chemical gaseous phase deposition technique, physical gas-phase deposition or
Atom layer deposition process.
In the present embodiment, the formation process of first separation layer 204 is atom layer deposition process.
The step coverage that atom layer deposition process has had can fill isolated groove 203 so that described first well
The thickness of separation layer 204 is uniform, and 203 bottom and side wall surface of isolated groove is completely covered.
In one embodiment, first separation layer 204 is not formed.
In the present embodiment, after forming the first separation layer 204, further include：Potential barrier is formed on 204 surface of the first separation layer
Regulating course 205.
The potential barrier regulating course 205 is located at 203 side wall of 200 first surface of semiconductor substrate and isolated groove of pixel region A
The first separation layer 204 and bottom 204 surface of the first separation layer.
The material of the potential barrier regulating course 205 is height-K dielectric materials.
High K dielectric material itself has partial negative charge, enables to positive charge in the semiconductor substrate 200 of pixel region A
200 surface of semiconductor substrate of 203 bottom and side wall of first surface 201 and isolated groove accumulates, and generates potential barrier, causes pixel
200 surface of semiconductor substrate of 203 bottom and side wall of 200 first surface of semiconductor substrate and isolated groove of area A is freely electric
Son is adsorbed, and can not move, is compound, therefore dark current reduces, so that the performance of back side illumination image sensor gets a promotion.
Height-K the dielectric materials include：Hafnium oxide, zirconium oxide, hafnium silicon oxide, lanthana, zirconium silicon oxide, titanium oxide, oxygen
Change tantalum, strontium barium oxide titanium, barium monoxide titanium, strontium oxide strontia titanium or aluminium oxide.
In the present embodiment, the material of the potential barrier regulating course 205 is hafnium oxide.
The thickness of the potential barrier regulating course 205 is 30 angstroms~150 angstroms.
If potential barrier adjusts layer thickness and is less than 30 angstroms, generation potential is less than normal, and constraint free electron ability is limited, improves dark current
Effect is limited；If potential barrier, which adjusts layer thickness, is more than 150 angstroms, excessive incident light can be absorbed so that the luminous energy that photosensitive structure receives
Decline, image sensor performance reduces.
The technique for forming the potential barrier regulating course 205 includes：Chemical gaseous phase deposition technique, physical gas-phase deposition or
Atom layer deposition process.
In the present embodiment, the formation process of the potential barrier regulating course 205 is atom layer deposition process.
In one embodiment, the potential barrier regulating course 205 is not formed.
Referring to FIG. 4, after forming potential barrier regulating course 205, conductive layer 206 is formed on 205 surface of potential barrier regulating course.
The conductive layer 206 is located at 200 first surface of pixel region A semiconductor substrates, 201 surface and 203 side wall of isolated groove
Potential barrier regulating course 205 and bottom 205 surface of potential barrier regulating course.
The material of the conductive layer 206 is transparent material, and the visible light transmittance rate of the transparent material is more than 9 percent
Ten.
The conductive layer 206 is transparent film layer, and light can extend there through, to the shadow that photosensitive structure receives ring compared with
It is small, and the conductive layer 206 can be conductive, when applying negative electrical charge on conductive layer 206, causes positive charge in pixel region semiconductor
Substrate first surface and the accumulation of the semiconductor substrate surface of isolated groove bottom and side wall, generate potential barrier so that pixel region A half
The silicon face of the semiconductor substrate 200 of 200 first surface 201 of conductor substrate and 203 bottom and side wall of isolated groove is freely electric
Son is adsorbed, and can not move, is compound, therefore dark current reduces, and improves the performance of back side illumination image sensor.
The material of the conductive layer 206 includes indium tin oxide material.
In the present embodiment, the material of the conductive layer 206 is indium tin oxide material.
In the present embodiment, the thickness of the conductive layer 206 is 50 angstroms~500 angstroms.
If 206 thickness of conductive layer is blocked up, portion of incident light can be absorbed so that the luminous energy that photosensitive structure receives is reduced, figure
As sensor performance declines.
Referring to FIG. 4, after forming conductive layer 206, separation layer 207, the separation layer are formed on 206 surface of the conductive layer
The 207 fillings completely isolated groove 203.
The separation layer 207 and the first separation layer 204, potential barrier regulating course 205 and the conductive layer in isolated groove 203
206 collectively form the isolation structure in pixel region A, and adjacent photosensitive structure is isolated in the isolation structure, prevents neighboring photosensitive knot
Photon crosstalk between structure 2210.
The forming method of the separation layer 207 includes：Formed conductive layer 206 after, 206 surface of conductive layer formed initially every
From film (not shown), the initial isolation film covers the 200 first surface surface of semiconductor substrate, and fills the full isolation
Groove 203；After forming initial isolation film, the initial isolation film is planarized, until the top surface of conductive layer 206 is exposed,
The separation layer 207 is formed in the isolated groove 203.
The formation process of the initial isolation film includes：Chemical gaseous phase deposition technique, physical gas-phase deposition or original
Sublayer depositing operation.
In the present embodiment, the formation process of the initial isolation film is chemical vapor deposition method.
The material of the separation layer 207 includes：Silica, silicon nitride or silicon oxynitride.
In the present embodiment, the material of the separation layer 207 is silica.
After forming the separation layer 207, the conduction being electrically connected to each other is formed on 200 first surface 201 of semiconductor substrate
Liner and shielding grid layer, the conductive gasket are located at the semiconductor substrate first surface 201 of logic area C, the shielding grid
Layer is located at the conductive layer surface of isolated area B, and the shielding grid layer is in contact with conductive layer, specifically please refers to Fig. 6 to Fig. 7.
Referring to FIG. 6, after forming separation layer 207, in 200 first surface of the pixel region A and isolated area B semiconductor substrates
201 206 surface of conductive layer and 207 surface of separation layer form protective layer 208；After forming protective layer 208, the half of logic area C
200 first surface of conductor substrate, 201 surface forms dielectric layer 209.
The protective layer protects conductive layer 206.
The conductive gasket being subsequently formed and semiconductor substrate is isolated in the dielectric layer 209.
In the present embodiment, 200 first surface of semiconductor substrate, 201 surface of logic area C has mask layer, the dielectric layer
209 are located at mask layer surface.
In one embodiment, dielectric layer 209 is not formed on 200 first surface of isolated area B semiconductor substrates, 201 surface.
The material of the protective layer 208 includes：Silica, silicon nitride or silicon oxynitride.
In the present embodiment, the material of the protective layer 208 is silica.
In the present embodiment, the material of the dielectric layer 209 is silica.
Referring to FIG. 7, after forming dielectric layer 209, conductive liner is formed on 200 first surface 201 of the semiconductor substrate
Pad 230 and shielding grid layer 220, the conductive gasket 230 are located at 200 first surface of semiconductor substrate, 201 table of logic area C
Face, the shielding grid layer 220 are located at 206 surface of conductive layer, and shielding grid layer 220 is in contact with conductive layer 206, and described lead
Electricity liner 230 is electrically connected with shielding grid layer 220.
The method for forming conductive gasket 230 on 200 first surface 201 of the semiconductor substrate and shielding grid layer 220
Including：After forming dielectric layer 209, etch-protecting layer 208 exposes the part top of 207 top surface of separation layer and conductive layer 206
Portion surface；Initial metal layer (not shown), the original metal are formed on 209 surface of the dielectric layer and 208 surface of protective layer
Layer also covers the atop part surface of 207 top surface of separation layer and conductive layer 206；Remove 209 surface of dielectric layer of logic area C
Initial metal layer, on the atop part surface and isolated area B of 208 surface of pixel region A protective layers and conductive layer 206
The atop part forming metal layer on surface (not shown) on 208 surface of protective layer, 207 top surface of separation layer and conductive layer 206；Shape
After metal layer, conductive gasket 230 is formed in the logic area C dielectric layer surfaces；After forming conductive gasket 230, in the gold
Belong to layer surface and forms patterned layer (not shown), the patterned layer expose portion metal layer；After forming patterned layer, with described
Patterned layer is metal layer described in mask etching, the part at separation layer 207 top and isolated area B conductive layers 206 of isolated area B
Top surface forms shielding grid layer 220, and the shielding grid layer 220 covers 207 top surface of separation layer and isolated area B is conductive
The atop part surface of layer 206.
The conductive layer with negative potential for connecting.
In one embodiment, the back side illumination image sensor further includes negative voltage applying unit (not shown).Negative voltage
Applying unit, the negative voltage applying unit are located in isolated area B semiconductor substrates 200, and the negative voltage applying unit with
Conductive gasket 230 connects.
Negative voltage applying unit directly provides negative electricity and is pressed onto conductive gasket 230, and negative voltage applying unit is also by being connected to
The shielding grid layer 220 of conductive gasket 230 provides negative electricity and is pressed onto conductive layer 206, and the conductive layer 206 has negative electrical charge.
In the present embodiment, the back side illumination image sensor does not include negative voltage applying unit, directly in conductive gasket 230
Upper application negative voltage.
When negative voltage is applied to conductive layer 206, conductive layer 206 has negative potential, and the material of potential barrier regulating course 205 is height
K dielectric materials have negative electrical charge, then the pixel region A semiconductor substrates 200 covered by potential barrier regulating course 205 and conductive layer 206 the
200 surface of semiconductor substrate of 203 bottom and side wall of one surface 201 and isolated groove generates the accumulation of positive charge so that as
The silicon face of the semiconductor substrate 200 of plain 200 first surface 201 of area A semiconductor substrates and 203 bottom and side wall of isolated groove
Free electron is adsorbed, and can not move, is compound, therefore dark current reduces, so that the performance of back side illumination image sensor obtains
To promotion.
Referring to FIG. 8, after forming shielding grid layer 220, in 200 first surface 201 of semiconductor substrate of the pixel region A
Surface forms Colony structure, and the shielding grid layer 220 surrounds the Colony structure.
The Colony structure includes：Filter layer 240 and lens jacket 250.
The filter layer 240 is used for the light of filter specific wavelengths.
The lens jacket 250 is for changing light path so that light enters filter layer and photoelectric sensing layer along specific light path.
Formed Colony structure method include：Filter layer 240 is formed in shielding grid layer 220；Form filter layer 240
Afterwards, lens jacket 250 is formed on filter layer 240, forms the Colony structure.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (13)
1. a kind of forming method of back side illumination image sensor, which is characterized in that including：
Semiconductor substrate is provided, the semiconductor substrate includes pixel region and isolated area, and the semiconductor substrate has the first table
Face；
Isolated groove is formed in the semiconductor substrate of the isolated area, the top of the isolated groove is located at first table
Face；
Conductive layer is formed in the isolated groove side wall and bottom surface；
Separation layer, the full isolated groove of separation layer filling are formed in the conductive layer surface.
2. the forming method of back side illumination image sensor according to claim 1, which is characterized in that the conductive layer is
The visible light transmittance rate of bright material, the transparent material is more than 90 percent.
3. the forming method of back side illumination image sensor according to claim 2, which is characterized in that the material of the conductive layer
Material includes indium tin oxide material.
4. the forming method of back side illumination image sensor according to claim 3, which is characterized in that in conductive layer and partly lead
The first separation layer is also formed between body substrate, the material of first separation layer includes silica.
5. the forming method of back side illumination image sensor according to claim 2, which is characterized in that the conductive layer also position
In the semiconductor substrate first surface of pixel region.
6. the forming method of back side illumination image sensor according to claim 1, which is characterized in that the thickness of the conductive layer
Degree is 50 angstroms~500 angstroms.
7. the forming method of back side illumination image sensor according to claim 5, which is characterized in that form the first separation layer
Afterwards, it is formed before conductive layer, further includes：Potential barrier regulating course is formed in first insulation surface.
8. the forming method of back side illumination image sensor according to claim 7, which is characterized in that the potential barrier regulating course
Material be height-K dielectric materials.
9. the forming method of back side illumination image sensor according to claim 8, which is characterized in that the height-K medium materials
Material includes：Hafnium oxide, zirconium oxide, hafnium silicon oxide, lanthana, zirconium silicon oxide, titanium oxide, tantalum oxide, strontium barium oxide titanium, barium monoxide
Titanium, strontium oxide strontia titanium or aluminium oxide.
10. the forming method of back side illumination image sensor according to claim 1, which is characterized in that the semiconductor lining
Bottom further includes the second surface opposite with first surface, and photosensitive structure is located in the semiconductor substrate of pixel region, and described second
Surface exposes the photosensitive structure.
11. the forming method of the back side illumination image sensor according to claim 1 or 10, which is characterized in that described partly to lead
Body substrate also has logic area, and after forming the separation layer, what formation was electrically connected to each other on semiconductor substrate first surface leads
Electricity liner and shielding grid layer, the conductive gasket are located at the semiconductor substrate first surface of logic area, the shielding grid layer
Positioned at the conductive layer surface of isolated area, the conductive layer is electrically connected with shielding grid layer.
12. the forming method of back side illumination image sensor according to claim 11, which is characterized in that form conductive gasket
After shielding grid layer, further include：Filter layer is formed between the shielding grid layer, the filter layer is located at the half of pixel region
Conductor substrate first surface；Lens jacket is formed in filter surfaces.
13. the forming method of back side illumination image sensor according to claim 1, which is characterized in that further include：It is described to lead
Electric layer with negative potential for connecting.
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