CN1884040A - Method for manufacturing and releasing sacrificial layer by adopting silicon substrate salient point - Google Patents
Method for manufacturing and releasing sacrificial layer by adopting silicon substrate salient point Download PDFInfo
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- CN1884040A CN1884040A CN 200510011989 CN200510011989A CN1884040A CN 1884040 A CN1884040 A CN 1884040A CN 200510011989 CN200510011989 CN 200510011989 CN 200510011989 A CN200510011989 A CN 200510011989A CN 1884040 A CN1884040 A CN 1884040A
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- nitride film
- sacrificial layer
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- 238000000034 method Methods 0.000 title claims abstract description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010703 silicon Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 57
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 57
- 238000005530 etching Methods 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 34
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 27
- 239000011651 chromium Substances 0.000 claims abstract description 27
- 238000005260 corrosion Methods 0.000 claims abstract description 16
- 230000007797 corrosion Effects 0.000 claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 67
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 36
- 230000008021 deposition Effects 0.000 claims description 31
- 239000012528 membrane Substances 0.000 claims description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 16
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004821 distillation Methods 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Abstract
A method for manufacturing and releasing a sacrificial layer by adopting a silicon substrate salient point comprises the following process steps: 1. depositing a silicon nitride film on a <100> silicon substrate; 2. depositing a chromium film on the surface, photoetching, removing chromium, and etching the silicon nitride film with partial depth to form an inverted trapezoidal window; 3. depositing a chromium film on the surface, photoetching, dechroming, etching a silicon nitride film, and removing photoresist; 4. etching the silicon substrate to form inverted trapezoid etching pits and protruding points; 5. depositing a silicon dioxide film sacrificial layer on the surface; 6. photoetching, base glue coating, depositing a chromium film on the surface, stripping, etching a silicon dioxide film hole, removing chromium, and cleaning the surface; 7. depositing a silicon nitride film on the surface; 8. depositing a chromium film on the surface, photoetching, dechroming, and etching silicon nitride film and silicon dioxide film corrosion grooves; 9. corroding and releasing the silicon dioxide film sacrificial layer; 10. depositing a silicon nitride film on the surface, and sealing the etching groove.
Description
Technical field
The invention belongs to one of MEMS (MEMS) key manufacture in the microelectric technique, promptly adopt method based on prominent some making of silicon substrate and releasing sacrificial layer.
Background technology
In MEMS (MEMS) manufacturing technology, the silicon substrate surface micromachining technology is an important component part, has avoided body silicon deep processing longitudinally, with integrated circuit technology better compatibility is arranged, and helps the integrated of structural devices and treatment circuit.In silicon substrate surface micromachined process, " sacrifice layer " technology that applies to is made unsettled beam, film or cavity structure, in the releasing sacrificial layer process or after the sacrifice layer formation, last structure sheaf is easy to take place and the silicon substrate adhesion phenomenon, generally adopts the method for etching in the sacrifice layer, the prominent point of deposit, prevents adhesion, many weeks, this method technology is loaded down with trivial details, and the time of etching sacrificial layer is longer, the requirement of incompatibility large-scale production.
Summary of the invention
The purpose of this invention is to provide the method for a kind of employing based on prominent some making of silicon substrate and releasing sacrificial layer, it utilizes the anisotropic etch of silicon substrate in corrosive liquid to go out down trapezoidal hole and the prominent point of triangle, prevents in the releasing sacrificial layer process or sacrifice layer formation upward structure sheaf and silicon substrate adhesion afterwards.
For achieving the above object, technical solution of the present invention provides a kind of based on the method that adopts prominent some making of silicon substrate and releasing sacrificial layer, and its step is as follows:
Step 1,＜100 deposition silicon nitride film on the silicon chip;
Step 2, surface deposition chromium thin film, photoetching is dechromised, and etched portions degree of depth silicon nitride film forms trapezoidal window;
Step 3, surface deposition chromium thin film, photoetching is dechromised, and the etch silicon nitride film removes photoresist;
Step 4, corrosion silicon substrate form trapezoidal etch pit and prominent point;
Step 5, surface deposition silica membrane sacrifice layer;
Step 6, photoetching, bottoming glue, the surface deposition chromium thin film is peeled off, and the etching silicon dioxide membrane pores is dechromised, the cleaning treatment surface;
Step 7, surface deposition silicon nitride film;
Step 8, surface deposition chromium thin film, photoetching is dechromised, etch silicon nitride film and silica membrane etching tank;
Step 9, corrosion discharge the silica membrane sacrifice layer;
Step 10, surface deposition silicon nitride film, the seal erosion groove.
Described employing is made based on the prominent point of silicon substrate and the method for releasing sacrificial layer, in the described step 1,＜100〉thickness of deposition silicon nitride film is 2.4-2.6 μ m on the silicon chip, is to adopt low-pressure chemical vapor deposition (LPCVD) method to obtain.
Described employing is dashed forward based on silicon substrate, and point is made and the method for releasing sacrificial layer, in the described step 2, and surface electronic beam evaporation chromium thin film, optical lithography, the wet method isotropism is dechromised, and uses SF
6Gas, with the silicon nitride film of the power isotropic etching 2.2-2.3 μ m degree of depth of the flow of 110-130sccm and 40-60w, form and fall trapezoidal window.
Described employing is dashed forward based on silicon substrate, and point is made and the method for releasing sacrificial layer, in the described step 3, and surface electronic beam evaporation chromium, optical lithography, the wet method isotropism is dechromised, and uses SF
6And CHF
3Gas, respectively with the flow of 70-90sccm and 130-150sccm, under the power condition of upper/lower electrode 60-65w and coil 400-450w the anisotropic etching silicon nitride film, till being carved into silicon substrate, remove photoresist with acetone.
Described employing is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, in the described step 4, with wet method anisotropic etch method corrosion silicon substrate, adopting concentration is that the KOH solution of 35%-40% corrode silicon 1.8-2 μ m under 80-85 ℃ of condition, forms to fall trapezoidal etch pit and the triangle point of dashing forward.
Described employing is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, and in the described step 5, the thickness of surface deposition silica membrane sacrifice layer is 1-2 μ m, is to adopt low-pressure chemical vapor deposition (LPCVD) method to obtain.
Described employing in the described step 6, is optical lithography based on the method for prominent some making of silicon substrate and releasing sacrificial layer, with oxygen, with the power bottoming glue of the flow of 50-70sccm and 10-12w about 1 minute, surface electronic beam evaporation chromium thin film is peeled off with acetone, uses SF
6Gas, with the power isotropic etching silica membrane hole of flow and the 60-70w of 35-40sccm, the silica membrane hole is of a size of 2 μ m * 2 μ m, spends chrome liquor wet method isotropism and dechromises, and uses the deionized water rinsing treatment surface.
Described employing is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, and in the described step 7, the thickness of deposition silicon nitride film is 1-1.2 μ m, is to adopt low-pressure chemical vapor deposition (LPCVD) method to obtain.
Described employing in the described step 8, is optical lithography based on the method for prominent some making of silicon substrate and releasing sacrificial layer, uses oxygen, feels secure glue about 1 minute with the flow of 50-70sccm and the power of 10-12w, and the surface evaporation chromium thin film is peeled off with acetone, uses SF
6Gas, with the flow of 50-70sccm and power isotropic etching silicon nitride film and the silica membrane etching tank of 60-70w, be carved into till the underlying silicon nitride film always.
Described employing is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, and in the described step 9, corrosion discharges the silica membrane sacrifice layer, is earlier with the NH that contains 40%-49%HF, 10%-12%
4The BHF wet method isotropic etch silica membrane sacrifice layer of F with deionized water, ethanol, acetone, ether displacement, is put in the cyclohexane solution successively at last, adopts the method for the solid-state distillation of cyclohexane to discharge the silica membrane sacrifice layer.
Described employing is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, and in the described step 10, the thickness of surface deposition silicon nitride film is 3-3.2 μ m, is to adopt low-pressure chemical vapor deposition (LPCVD) method to obtain.
Characteristics of the present invention are to avoid the processing step of etching, the prominent point of deposit in sacrifice layer, and directly utilize the anisotropic etch of silicon substrate in corrosive liquid to go out down trapezoidal hole and the prominent point of triangle, its ratio of dashing forward is sharper by the prominent point that etching in sacrifice layer, deposit go out, and can more effectively prevent in the releasing sacrificial layer process or the sacrifice layer formation upward adhesion of structure sheaf and silicon substrate afterwards.This method is with low cost, the production efficiency height, and process stabilizing has very strong practical value.
The inventive method can obtain to prevent the sacrifice layer of adhesion, is suitable for large-scale production.
Description of drawings
Fig. 1-1 is to Fig. 1-the 9th, flow chart of the present invention;
Fig. 2-1 is to Fig. 2-the 10th, the flow chart of the invention process example.
The specific embodiment
Step of the present invention is as follows: 1,＜100〉deposit silicon nitride (SiN on the silicon chip
X) film; 2, surface deposition chromium thin film, photoetching is dechromised, etched portions degree of depth silicon nitride (SiN
X) film, form trapezoidal window; 3, surface deposition chromium thin film, photoetching is dechromised, etch silicon nitride (SiN
X) film, remove photoresist; 4, corrosion silicon substrate forms trapezoidal etch pit and prominent point 5, surface deposition silica (SiO
2) the film sacrifice layer; 6, photoetching, bottoming glue, the surface deposition chromium thin film is peeled off, etching silicon dioxide (SiO
2) membrane pores, dechromise the cleaning treatment surface; 7, surface deposition silicon nitride (SiN
X) film 8, photoetching, bottoming glue, the surface deposition chromium thin film is peeled off, etch silicon nitride (SiN
X) film and silica (SiO
2) the thin film corrosive groove; 9, corrosion discharges silica (SiO
2) the film sacrifice layer; 10, surface deposition silicon nitride (SiN
X) film, the seal erosion hole.
Wherein, on silicon chip, use the thick silicon nitride (SiN of low-pressure chemical vapor deposition (LPCVD) method deposit 2.4-2.6 μ m
X) after the film, use SF earlier
6Gas, with the silicon nitride (SiN of the power isotropic etching 2.2-2.3 μ m degree of depth of the flow of 110-130sccm and 40-60w
X) film, form trapezoidal window, use SF
6And CHF
3Gas, respectively with the flow of 70-90sccm and 130-150sccm, under the power condition of upper/lower electrode 60-65w and coil 400-450w anisotropic etching silicon nitride (SiN
X) film, till being carved into silicon substrate, remove photoresist with acetone.
Wherein, it is that the KOH solution of 35%-40% corrodes silicon under 80-85 ℃ of condition that the corrosion silicon substrate adopts concentration, and corrosion depth is 1.8-2 μ m, forms to fall trapezoidal etch pit and the prominent point of triangle.Surface low-pressure chemical vapor deposition (LPCVD) method deposit silica (SiO
2) thickness of film sacrifice layer is 1-2 μ m.
Wherein, isotropic etching silica (SiO
2) before the membrane pores, photo-etched, bottoming glue, steam chromium, peel off.Silica (SiO
2) membrane pores is of a size of 2 μ m * 2 μ m, adopts SF in the etching
6The power of gas, 60-70w, flow is suitable, adopts the flow of 35-40sccm.
Wherein, use low-pressure chemical vapor deposition LPCVD method deposit silicon nitride (SiN on the surface
X) thickness of film is 1-1.2 μ m.
Wherein, isotropic etching silicon nitride (SiN
X) film and silica (SiO
2) during the thin film corrosive groove, the length and width of etching tank are set as required.Adopt SF in the etching
6The power of gas, 50-70w, flow can be a little bigger, adopts the flow of 60-70sccm, be carved into underlying silicon nitride (SiN always
X) till the film.
Wherein, corrosion discharges silica (SiO
2) the film sacrifice layer, be earlier with containing the HF of 40%-49%, the NH of 10%-12%
4The BHF wet method isotropic etch silica (SiO of F
2) the film sacrifice layer, with deionized water, ethanol, acetone, ether displacement, be put in the cyclohexane solution at last successively.When adopting the method for the solid-state distillation of cyclohexane, solution temperature to be dropped to below-15 ℃ earlier, environment is evacuated to vacuum, solution temperature is raised to more than 81 ℃ again, the taking-up silicon chip is finished in distillation.
Wherein, during the seal erosion groove, use low-pressure chemical vapor deposition (LPCVD) method deposit silicon nitride (SiN on the surface
X) thickness of film is at least 3-3.2 μ m, just can seal up etching tank.
Conclusion is got up, flow process of the present invention as shown in Figure 1:
1, as Figure 1-1,＜100〉on the silicon chip 101 with low-pressure chemical vapor deposition LPCVD method deposit silicon nitride (SiN
X) film 102, thickness is 2.4-2.6 μ m.
2, shown in Fig. 1-2, the dark silicon nitride (SiN of first isotropic etching 2.2-2.3 μ m
X) film 102 falls trapezoidal window, anisotropy is carved into silicon substrate with it again.
3, as Figure 1-3, adopting concentration is that the KOH solution of 35%-40% corrodes silicon under 80-85 ℃ of condition, and corrosion depth is 1.8-2 μ m, forms to fall trapezoidal etch pit and the prominent point 103 of triangle.
4, shown in Fig. 1-4, use low-pressure chemical vapor deposition (LPCVD) method deposit silica (SiO on the surface
2) film sacrifice layer 104, thickness is 1-2 μ m.
5, shown in Fig. 1-5, use SF
6Gas, with the flow of 35-40sccm and the power isotropic etching silica (SiO of 60-70w
2) film 104, etched hole is of a size of 2 μ m * 2 μ m.
6, shown in Fig. 1-6, use low-pressure chemical vapor deposition (LPCVD) method deposit silicon nitride (SiN on the surface
X) film 105, thickness is 1-1.2 μ m.
7, shown in Fig. 1-7, use SF
6Gas, with the flow of 60-70sccm and the power isotropic etching silicon nitride (SiN of 50-70w
X) film 105 and silica (SiO
2) film 104 etching tanks, be carved into underlying silicon nitride (SiN always
X) till the film 102.
8, shown in Fig. 1-8, earlier with the NH that contains 40%-49%HF, 10%-12%
4The BHF wet method isotropic etch silica (SiO of F
2) film sacrifice layer 204, with deionized water, ethanol, acetone, ether displacement, be put at last in the cyclohexane solution successively, adopt the method for the solid-state distillation of cyclohexane to discharge silica (SiO
2) film sacrifice layer 204.
9, shown in Fig. 1-9, use low-pressure chemical vapor deposition (LPCVD) method deposit silicon nitride (SiN on the surface
X) film 106, thickness is 3-3.2 μ m, the seal erosion groove.
Embodiment:
1, shown in Fig. 2-1,＜100〉on the silicon chip 201 with low-pressure chemical vapor deposition (LPCVD) method deposit silicon nitride (SiN
X) film 202, thickness is 2.4-2.6 μ m.
2, shown in Fig. 2-2, the silicon nitride (SiN that isotropic etching 2.2-2.3 μ m is dark
X) 202 one-tenth of films fall trapezoidal window.
3, shown in Fig. 2-3, anisotropy will be fallen trapezoidal window and will be carved into silicon substrate.
4, shown in Fig. 2-4, adopting concentration is that the KOH solution of 35%-40% corrodes silicon under 80-85 ℃ of condition, and corrosion depth is 1.8-2 μ m, forms to fall trapezoidal etch pit and the prominent point 203 of triangle.
5, shown in Fig. 2-5, use low-pressure chemical vapor deposition (LPCVD) method deposit silica (SiO on the surface
2) film sacrifice layer 204, thickness is 1-2 μ m.
6, shown in Fig. 2-6, use SF
6Gas, with the flow of 35-40sccm and the power isotropic etching silica (SiO of 60-70w
2) film 204, etched hole is of a size of 2 μ m * 2 μ m.
7, shown in Fig. 2-7, use low-pressure chemical vapor deposition (LPCVD) method deposit silicon nitride (SiN on the surface
X) film 205, thickness is 1-1.2 μ m.
8, shown in Fig. 2-8, use SF
6Gas, with the flow of 60-70sccm and the power isotropic etching silicon nitride (SiN of 50-70w
X) film 205 and silica (SiO
2) film 204 etching tanks, be carved into underlying silicon nitride (SiN always
X) till the film 202.
9, shown in Fig. 2-9, earlier with the NH that contains 40%-49%HF, 10%-12%
4The BHF wet method isotropic etch silica (SiO of F
2) film sacrifice layer 204, with deionized water, ethanol, acetone, ether displacement, be put at last in the cyclohexane solution successively, adopt the method for the solid-state distillation of cyclohexane to discharge silica (SiO
2) film sacrifice layer 204.
10, shown in Fig. 2-10, use low-pressure chemical vapor deposition (LPCVD) method deposit silicon nitride (SiN on the surface
X) film 206, thickness is 3-3.2 μ m, the seal erosion groove.
Claims (11)
1, a kind of based on the method that adopts prominent some making of silicon substrate and releasing sacrificial layer, it is characterized in that step is as follows:
Step 1,＜100 deposition silicon nitride film on the silicon chip;
Step 2, surface deposition chromium thin film, photoetching is dechromised, and etched portions degree of depth silicon nitride film forms trapezoidal window;
Step 3, surface deposition chromium thin film, photoetching is dechromised, and the etch silicon nitride film removes photoresist;
Step 4, corrosion silicon substrate form trapezoidal etch pit and prominent point;
Step 5, surface deposition silica membrane sacrifice layer;
Step 6, photoetching, bottoming glue, the surface deposition chromium thin film is peeled off, and the etching silicon dioxide membrane pores is dechromised, the cleaning treatment surface;
Step 7, surface deposition silicon nitride film;
Step 8, surface deposition chromium thin film, photoetching is dechromised, etch silicon nitride film and silica membrane etching tank;
Step 9, corrosion discharge the silica membrane sacrifice layer;
Step 10, surface deposition silicon nitride film, the seal erosion groove.
2, employing according to claim 1 is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, it is characterized in that, in the described step 1,＜100〉thickness of deposition silicon nitride film is 2.4-2.6 μ m on the silicon chip, be to adopt low-pressure chemical vapor deposition method to obtain.
3, employing according to claim 1 is characterized in that based on the method for prominent some making of silicon substrate and releasing sacrificial layer, in the described step 2, and surface electronic beam evaporation chromium thin film, optical lithography, the wet method isotropism is dechromised, and uses SF
6Gas, with the silicon nitride film of the power isotropic etching 2.2-2.3 μ m degree of depth of the flow of 110-130sccm and 40-60w, form and fall trapezoidal window.
4, employing according to claim 1 is characterized in that based on the method for prominent some making of silicon substrate and releasing sacrificial layer, in the described step 3, and surface electronic beam evaporation chromium, optical lithography, the wet method isotropism is dechromised, and uses SF
6And CHF
3Gas, respectively with the flow of 70-90sccm and 130-150sccm, under the power condition of upper/lower electrode 60-65w and coil 400-450w the anisotropic etching silicon nitride film, till being carved into silicon substrate, remove photoresist with acetone.
5, employing according to claim 1 is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, it is characterized in that, in the described step 4, with wet method anisotropic etch method corrosion silicon substrate, adopting concentration is that the KOH solution of 35%-40% corrode silicon 1.8-2 μ m under 80-85 ℃ of condition, forms to fall trapezoidal etch pit and the triangle point of dashing forward.
6, employing according to claim 1 is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, it is characterized in that, in the described step 5, the thickness of surface deposition silica membrane sacrifice layer is 1-2 μ m, is to adopt low-pressure chemical vapor deposition method to obtain.
7, employing according to claim 1 is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, it is characterized in that, in the described step 6, be optical lithography, with oxygen, with the power bottoming glue of the flow of 50-70sccm and 10-12w 0.9 ~ 1.1 minute, surface electronic beam evaporation chromium thin film is peeled off with acetone, uses SF
6Gas, with the power isotropic etching silica membrane hole of flow and the 60-65w of 35-40sccm, the silica membrane hole is of a size of 2 μ m * 2 μ m, spends chrome liquor wet method isotropism and dechromises, and uses the deionized water rinsing treatment surface.
8, employing according to claim 1 is characterized in that based on the method for prominent some making of silicon substrate and releasing sacrificial layer in the described step 7, the thickness of deposition silicon nitride film is 1-1.2 μ m, is to adopt low-pressure chemical vapor deposition method to obtain.
9, employing according to claim 1 is based on the method for prominent some making of silicon substrate and releasing sacrificial layer, it is characterized in that, in the described step 8, be optical lithography, with oxygen, with the power bottoming glue of the flow of 50-70sccm and 10-12w 0.9 ~ 1.1 minute, the surface evaporation chromium thin film is peeled off with acetone, uses SF
6Gas, with the flow of 50-70sccm and power isotropic etching silicon nitride film and the silica membrane etching tank of 60-70w, be carved into till the underlying silicon nitride film always.
10, employing according to claim 1 is characterized in that based on the method for prominent some making of silicon substrate and releasing sacrificial layer in the described step 9, corrosion discharges the silica membrane sacrifice layer, is earlier with the NH that contains 40%-49%HF, 10%-12%
4The BHF wet method isotropic etch silica membrane sacrifice layer of F successively with deionized water, ethanol, acetone, ether displacement, is put in the cyclohexane solution more at last, adopts the method for the solid-state distillation of cyclohexane to discharge the silica membrane sacrifice layer.
11, employing according to claim 1 is characterized in that based on the method for prominent some making of silicon substrate and releasing sacrificial layer in the described step 10, the thickness of surface deposition silicon nitride film is 3-3.2 μ m, is to adopt low-pressure chemical vapor deposition method to obtain.
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| JP2870579B2 (en) * | 1995-10-16 | 1999-03-17 | 日本電気株式会社 | Method for manufacturing field effect transistor |
| CN1054468C (en) * | 1998-07-03 | 2000-07-12 | 北京大学 | Polysilicon structure discharge technology for surface treatment |
| US6596624B1 (en) * | 1999-07-31 | 2003-07-22 | International Business Machines Corporation | Process for making low dielectric constant hollow chip structures by removing sacrificial dielectric material after the chip is joined to a chip carrier |
| CN1154195C (en) * | 1999-11-03 | 2004-06-16 | 光磊科技股份有限公司 | Film-type device and its manufacture |
| CN1274007C (en) * | 2003-09-17 | 2006-09-06 | 华东师范大学 | Preparation method for silicon-based micro machine microwave/radiofrequency switch chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102259822A (en) * | 2010-05-27 | 2011-11-30 | 上海华虹Nec电子有限公司 | Method for preparing pressure-sensitive sensor and method for forming cavity structure on silicon wafer |
| CN102259822B (en) * | 2010-05-27 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | Method for preparing pressure-sensitive sensor and method for forming cavity structure on silicon wafer |
| CN106082103A (en) * | 2015-04-29 | 2016-11-09 | 台湾积体电路制造股份有限公司 | Prevent MEMS (MEMS) structure of viscous after wet cleaning |
| CN106082103B (en) * | 2015-04-29 | 2018-05-11 | 台湾积体电路制造股份有限公司 | Prevent the viscous MEMS after wet cleaning（MEMS）Structure |
| CN117318646A (en) * | 2023-10-12 | 2023-12-29 | 中微龙图电子科技无锡有限责任公司 | Manufacturing method of surface acoustic wave filter with temperature compensation function |
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