CN1154195C - Film-type device and its manufacture - Google Patents
Film-type device and its manufacture Download PDFInfo
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- CN1154195C CN1154195C CNB991222229A CN99122222A CN1154195C CN 1154195 C CN1154195 C CN 1154195C CN B991222229 A CNB991222229 A CN B991222229A CN 99122222 A CN99122222 A CN 99122222A CN 1154195 C CN1154195 C CN 1154195C
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- structure sheaf
- etch window
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims description 18
- 239000000725 suspension Substances 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- 239000002609 medium Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 16
- 238000002360 preparation method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
The present invention relates to a film type device and a making method thereof. The method comprises the following steps: a bottom layer is formed on the upper surface of a substrate; a first etching window is opened on the bottom layer; a sacrificial layer is formed to fill the first etching window; a structural layer is formed to cover the surface of the sacrificial layer; a second etching window is opened on the structural layer; finally, the second etching window is used for etching the sacrificial layer and the substrate, so that the second etching window is communicated with the first etching window; moreover, a pit is formed deeply in the substrate, so that a suspended region of the structural layer is formed above the pit, and the structural layer is isolated from the substrate. The film type device which is made by the present invention can obtain a suspended region with a large area, can avoid the conglutination of the suspended region and the bottom layer, and has high reliability.
Description
The present invention relates to a kind of film-type device and preparation method thereof, particularly about adopting sacrifice layer to make the method and the structure thereof of film-type device.
Film-type device, thermoelectric pile (Thermopile) element for example, resistor-type temperature-sensitive sticker (Bolometer), pressure sensor, flowmeter and gas sensing device or the like, its manufacture method can roughly be divided into front-side etch manufacturing process (Frontside Etching Process) and back etched manufacturing process (Backside Etching Process), the latter's shortcoming need to be special aligning exposure bench, and the flow process of the making film-type device before the tradition is as shown in Figure 1, at first form bottom 13 and structure sheaf 14 in regular turn at a substrate 12 upper surfaces, then form an etch window 16 and run through structure sheaf 14 and bottom 13, make substrate 12 surperficial exposed portions serve zones, and then 16 pairs of substrates of etch window 12 carry out anisotropic etching (anisotr0pic etching) thus, make substrate 12 form a hole (pit) 18, so that bottom 13 forms a suspension zone 19 in the lump with structure sheaf 14, and form isolation between the substrate 12.
Yet, the resulting suspension of this manufacture method zone 19 area ratios that can use are little, for improving this shortcoming, a kind of new manufacture method is suggested, see also Fig. 2, it is after substrate 22 upper surfaces form bottom 23, form a sacrifice layer 24 on bottom 23 surfaces, and then formation structure sheaf 26 topped sacrifice layers 24 surfaces, then just offer an etch window 28, and carry out etching by etch window 28 sacrifice layer 24 is removed, make and form a gap (gap) 29 between structure sheaf 26 and the bottom 23 at structure sheaf 26, cause structure sheaf 26 to form a suspension zone 262, and form isolation between the bottom 23.
Though the area in the suspension zone 262 that this manufacture method obtains is bigger, because the structure sheaf 6 sagging zones 62 that cause suspending adhere to (sticking) with bottom 23.Therefore, be necessary to be improved again, in the hope of perfect at the manufacture method of film-type device.
Main purpose of the present invention provides a kind of film-type device and preparation method thereof, can increase the area in its zone that suspends.
Of the present invention time a purpose provides a kind of film-type device and preparation method thereof, can solve its suspend a zone and difficult problem that bottom adheres to, and improves reliability.
Film-type device of the present invention is achieved in that it comprises: a substrate, and it has a upper surface; One hole gos deep in this substrate from the upper surface of this substrate; Bottom is formed at the upper surface of this substrate; Structure sheaf is formed on this bottom, this structure sheaf also has a zone and is suspended in this hole top, wherein, this bottom has a part and is attached at the below, suspension zone of this structure sheaf and forms a reserve area, and the degree of depth of this hole need be enough to avoid this structure sheaf and this bottom and the generation of this substrate to stick; And one first etch window and one second etch window, being formed in regular turn on this bottom and this structure sheaf, and running through this bottom and this structure sheaf respectively and be communicated with this hole, this second etch window is positioned at and encloses outside this hole again, increases the area in this suspension zone by this.
Wherein this substrate is a silicon.
Wherein this structure sheaf comprises thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.
Wherein this structure sheaf comprises one or more layers dielectric medium, semi-conducting material, metal material, metal oxide, metal nitride or metal silicide.
Wherein this bottom comprises thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.
Wherein this bottom comprises one or more layers dielectric medium, semi-conducting material, metal material, metal oxide, metal nitride or metal silicide.
Film-type device of the present invention also can be achieved in that and comprise: a substrate; One bottom is formed at the upper surface of this substrate, and this bottom offers first etch window; One hole gos deep in this substrate from this first etch window, and the degree of depth of this hole need be enough to avoid this structure sheaf and this bottom and the generation of this substrate to stick; Structure sheaf is formed on this bottom, and this structure sheaf also has a zone and is suspended in this hole top, and the regional lower surface that should suspend is in abutting connection with this hole, and and form between this bottom and this substrate and isolate; And second etch window, run through this structure sheaf and be communicated with this hole, and this second etch window is positioned at and encloses outside this first etch window via this first etch window, increase the area in this suspension zone by this.
Wherein this substrate is a silicon.
Wherein this structure sheaf comprises thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.
Wherein this structure sheaf comprises one or more layers dielectric medium, semi-conducting material, metal material, metal oxide, metal nitride or metal silicide.
Wherein this bottom comprises thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.
Wherein this bottom comprises one or more layers dielectric medium, semi-conducting material, metal material, metal oxide, metal nitride or metal silicide.
The manufacture method of film-type device of the present invention is achieved in that and comprises the following steps: to provide a substrate; Upper surface at this substrate forms bottom; Offer first etch window at this bottom; Form sacrifice layer on this bottom of this first etch window and both sides thereof; Form structure sheaf in this bottom and this sacrificial layer surface; Offer second etch window at this structure sheaf, make the sacrifice layer on this bottom expose a part; And sacrifice layer and this substrate are carried out etching via this second etch window.
The manufacture method of film-type device of the present invention also can be achieved in that and comprise the following steps: to provide a substrate; Upper surface at this substrate forms bottom; Offer first etch window at this bottom, so that this bottom is defined at least one reserve area by first etch window; Form sacrifice layer on this bottom in this first etch window and the outside thereof; Form the surface of structure sheaf at this bottom, this sacrifice layer and this reserve area; Offer second etch window at this structure sheaf, make the sacrifice layer on this bottom expose a part; And this sacrifice layer and substrate are carried out etching via this second etch window.
The manufacture method of disclosed a kind of film-type device is after substrate top surface forms bottom, offers first etch window at bottom earlier, and forms sacrifice layer filling first etch window; Then form the topped sacrificial layer surface of structure sheaf, and offer second etch window at structure sheaf.Via second etch window sacrifice layer and substrate are carried out etching at last, make second etch window be communicated with first etch window, and form a hole and go deep in the substrate, cause structure sheaf above hole, to form the zone that suspends, and and form between the substrate and isolate.
Following conjunction with figs. describes feature of the present invention and content in detail.
Fig. 1 is tradition is made film-type device with front-side etch manufacturing process a flow chart.
Fig. 2 adopts sacrifice layer to make the flow chart of film-type device in the traditional technology.
Fig. 3 is the flow chart of one embodiment of the invention.
Fig. 4 is the flow chart of another embodiment of the present invention.
Fig. 3 is the flow chart of one embodiment of the invention.At first, form bottom 33 at substrate 32 upper surfaces.Then offer first etch window 34, and form sacrifice layer 36, for example polysilicon or silica, filling first etch window 34 at bottom 33.Finish and make after the sacrifice layer 36, it is topped in its surface to form structure sheaf 37, and offer second etch window 38 at structure sheaf 37, the part on sacrifice layer 36 surfaces is exposed, wherein, bottom 33 is formed by individual layer or multilayer material with structure sheaf 37, for example dielectric medium, semiconductor element, metal material, metal oxide, metal nitride or metal silicide, include electronic component in it, for example thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.Carry out etching via second etch window 38 for sacrifice layer 36 and substrate 32 then, and form a hole 39, go deep into to substrate 32 by first etch window 34, and second etch window 38 is communicated with hole 39, cause structure sheaf 37 above hole 39, to form one and suspend regional 372, and there are not other interfaces between the two in regional 372 lower surfaces that suspend in abutting connection with hole 39, promptly suspend all to form between zone 372 and bottom 33 and the substrate 32 to isolate.
Make film-type device with flow process shown in Figure 3 and can access larger area suspension zone 372.There is not bottom 33 in regional 372 belows owing to suspend, and hole 39 makes to suspend to have a suitable height between zone 372 and the substrate 32, therefore the zone 372 that suspends can not adhere to bottom 33 or substrate 32, can obtain effective raising for the reliability of film-type device.
Fig. 4 provides the flow chart of another embodiment of the present invention, and itself and flow process shown in Figure 3 are roughly the same.At first form bottom 43, and offer first etch window 44, so that defined a reserve area 432 by first etch window 44 at bottom 43 at bottom 43 on substrate 42 surfaces; Then form sacrifice layer 46 fillings first etch window 44, form structure sheaf 47 on the surface of sacrifice layer 46 and reserve area 432 again, and offer second etch window 48 at structure sheaf 47, carry out etching via 48 pairs of sacrifice layers 46 of second etch window and substrate 42, make substrate 42 form a hole 49, go deep into to substrate 42 from the upper surface of substrate 42, and second etch window 48 runs through bottom 43 and is communicated with hole 49, so that structure sheaf 47 forms the zone 472 that suspends, and the lower surface in the zone 472 that suspends attaches reserve area 432.Wherein, form reserve area 432 regional 472 stress compensations that suspend can be provided, the former area can be less than or greater than the latter's area, break in zone 472 in order to avoid suspending.
In different embodiment, can in substrate, bottom or structure sheaf, make electronic circuit, this is known by the personage who is familiar with film-type device, is not described in detail in this.
Claims (14)
1, a kind of film-type device is characterized in that: comprising: a substrate, and it has a upper surface; One hole gos deep in this substrate from the upper surface of this substrate; Bottom is formed at the upper surface of this substrate; Structure sheaf is formed on this bottom, this structure sheaf also has a zone and is suspended in this hole top, wherein, this bottom has a part and is attached at the below, suspension zone of this structure sheaf and forms a reserve area, and the degree of depth of this hole need be enough to avoid this structure sheaf and this bottom and the generation of this substrate to stick; And one first etch window and one second etch window, being formed in regular turn on this bottom and this structure sheaf, and running through this bottom and this structure sheaf respectively and be communicated with this hole, this second etch window is positioned at and encloses outside this hole again, increases the area in this suspension zone by this.
2, film-type device as claimed in claim 1 is characterized in that: wherein this substrate is a silicon.
3, film-type device as claimed in claim 1 is characterized in that: wherein this structure sheaf comprises thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.
4, film-type device as claimed in claim 1 is characterized in that: wherein this structure sheaf comprises one or more layers dielectric medium, semi-conducting material, metal material, metal oxide, metal nitride or metal silicide.
5, film-type device as claimed in claim 1 is characterized in that: wherein this bottom comprises thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.
6, film-type device as claimed in claim 1 is characterized in that: wherein this bottom comprises one or more layers dielectric medium, semi-conducting material, metal material, metal oxide, metal nitride or metal silicide.
7, a kind of film-type device, it is characterized in that: it comprises: a substrate; Bottom is formed at the upper surface of this substrate, and this bottom offers first etch window; One hole gos deep in this substrate from this first etch window, and the degree of depth of this hole need be enough to avoid this structure sheaf and this bottom and the generation of this substrate to stick; Structure sheaf is formed on this bottom, and this structure sheaf also has a zone and is suspended in this hole top, and the regional lower surface that should suspend is in abutting connection with this hole, and and form between this bottom and this substrate and isolate; And second etch window, run through this structure sheaf and be communicated with this hole, and this second etch window is positioned at and encloses outside this first etch window via this first etch window, increase the area in this suspension zone by this.
8, film-type device as claimed in claim 7 is characterized in that: wherein this substrate is a silicon.
9, film-type device as claimed in claim 7 is characterized in that: wherein this structure sheaf comprises thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.
10, film-type device as claimed in claim 7 is characterized in that: wherein this structure sheaf comprises one or more layers dielectric medium, semi-conducting material, metal material, metal oxide, metal nitride or metal silicide.
11, film-type device as claimed in claim 7 is characterized in that: wherein this bottom comprises thermoelectric pile element, heat resistance type temperature sensor, pressure sensing element, flow sensing element, gas sensing element or electronic component.
12, film-type device as claimed in claim 7 is characterized in that: wherein this bottom comprises one or more layers dielectric medium, semi-conducting material, metal material, metal oxide, metal nitride or metal silicide.
13, a kind of method of making film-type device is characterized in that: comprise the following steps: to provide a substrate; Upper surface at this substrate forms bottom; Offer first etch window at this bottom; Form sacrifice layer on this bottom of this first etch window and both sides thereof; Form structure sheaf in this bottom and this sacrificial layer surface; Offer second etch window at this structure sheaf, make the sacrifice layer on this bottom expose a part; And sacrifice layer and this substrate are carried out etching via this second etch window.
14, a kind of method of making film-type device is characterized in that: comprise the following steps: to provide a substrate; Upper surface at this substrate forms bottom; Offer first etch window at this bottom, so that this bottom is defined at least one reserve area by first etch window; Form sacrifice layer on this bottom in this first etch window and the outside thereof; Form the surface of structure sheaf at this bottom, this sacrifice layer and this reserve area; Offer second etch window at this structure sheaf, make the sacrifice layer on this bottom expose a part; And this sacrifice layer and substrate are carried out etching via this second etch window.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991222229A CN1154195C (en) | 1999-11-03 | 1999-11-03 | Film-type device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991222229A CN1154195C (en) | 1999-11-03 | 1999-11-03 | Film-type device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1295352A CN1295352A (en) | 2001-05-16 |
| CN1154195C true CN1154195C (en) | 2004-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB991222229A Expired - Lifetime CN1154195C (en) | 1999-11-03 | 1999-11-03 | Film-type device and its manufacture |
Country Status (1)
| Country | Link |
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| CN (1) | CN1154195C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100396594C (en) * | 2005-06-23 | 2008-06-25 | 中国科学院微电子研究所 | Method for manufacturing and releasing sacrificial layer by adopting silicon substrate salient point |
| CN103496665B (en) * | 2013-10-19 | 2015-10-07 | 汪硕 | A kind of pressure flow temperature integrated chip and preparation method thereof |
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1999
- 1999-11-03 CN CNB991222229A patent/CN1154195C/en not_active Expired - Lifetime
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| Publication number | Publication date |
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| CN1295352A (en) | 2001-05-16 |
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Granted publication date: 20040616 |