CN1882712A - 可更换板的膨胀热等离子体装置和方法 - Google Patents
可更换板的膨胀热等离子体装置和方法 Download PDFInfo
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- CN1882712A CN1882712A CNA2004800325900A CN200480032590A CN1882712A CN 1882712 A CN1882712 A CN 1882712A CN A2004800325900 A CNA2004800325900 A CN A2004800325900A CN 200480032590 A CN200480032590 A CN 200480032590A CN 1882712 A CN1882712 A CN 1882712A
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
栅板设计 | 沉积温度(℃) | 厚度(μm) | Taber d浊度 | WI粘结性(1-5B) |
扩张通道a | 72 | 2.08 | 4.0 | 5 |
1.8mm直通道 | 96 | 2.73 | 3.8 | 3 |
扩张通道a反向的 | 82 | 2.50 | 3.9 | 4 |
控制参数 | 响应 | |||||
气体 | 栅极 | Ar流量 | VTMS流量 | 电流 | 产生的功率 | 产生的压力比 |
VTMS | 双倍长度 | 2 | 0.15 | 40 | 1440 | 3.1 |
VTMS | 双倍长度 | 2 | 0.15 | 60 | 2430 | 3.66667 |
VTMS | 双倍长度 | 2 | 0.35 | 40 | 1376 | 2.14286 |
VTMS | 双倍长度 | 2 | 0.35 | 60 | 2400 | 3.11429 |
VTMS | 双倍长度 | 1 | 0.15 | 40 | 1224 | 2.16667 |
VTMS | 双倍长度 | 1 | 0.15 | 60 | 2088 | 2.96667 |
VTMS | 双倍长度 | 1 | 0.35 | 40 | 1228 | 1.71429 |
VTMS | 双倍长度 | 1 | 0.35 | 60 | 2082 | 2.37143 |
VTMS | 标准 | 2 | 0.15 | 40 | 960 | 2.46667 |
VTMS | 标准 | 2 | 0.15 | 60 | 1626 | 3.33333 |
VTMS | 标准 | 2 | 0.35 | 40 | 928 | 1.77143 |
VTMS | 标准 | 2 | 0.35 | 60 | 1602 | 2.57143 |
VTMS | 标准 | 1 | 0.15 | 40 | 832 | 1.8 |
VTMS | 标准 | 1 | 0.15 | 60 | 1416 | 2.33333 |
VTMS | 标准 | 1 | 0.35 | 40 | 836 | 1.42857 |
VTMS | 标准 | 1 | 0.35 | 60 | 1404 | 1.85714 |
术语 | 效果 | 系数 | 标准偏差系数 | T | P |
常量栅极Ar流量VTMS流量电流 | -583.0206.5-20.0778.0 | 1492.0-291.5103.2-10.0389.0 | 26.4426.4426.4426.4426.44 | 56.42-11.023.90-0.3814.71 | 0.0000.0000.0020.7130.000 |
源 | DF | Seq SS | Adj SS | Adj MS | F | P |
主效果残留误差总计 | 41115 | 39528611230754075936 | 3952861123075 | 98821511189 | 88.32 | 0.000 |
术语 | 效果 | 系数 | 标准偏差系数 | T | P |
常量栅极Ar流量VTMS流量电流 | -0.46010.6911-0.60770.7030 | 2.4253-0.23010.3455-0.30390.3515 | 0.033600.033600.033600.033600.03360 | 72.18-6.8510.28-9.0410.46 | 0.0000.0000.0000.0000.000 |
源 | DF | Seq SS | Adj SS | Adj MS | F | P |
主效果残留误差总计 | 41115 | 6.21130.19876.4100 | 6.21130.1987 | 1.552810.01807 | 85.9S | 0.000 |
Claims (41)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/655,350 | 2003-09-05 | ||
US10/655,350 US7282244B2 (en) | 2003-09-05 | 2003-09-05 | Replaceable plate expanded thermal plasma apparatus and method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1882712A true CN1882712A (zh) | 2006-12-20 |
Family
ID=34226110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2004800325900A Pending CN1882712A (zh) | 2003-09-05 | 2004-09-03 | 可更换板的膨胀热等离子体装置和方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7282244B2 (zh) |
EP (1) | EP1664378B1 (zh) |
JP (1) | JP2007504630A (zh) |
KR (1) | KR20060121888A (zh) |
CN (1) | CN1882712A (zh) |
AT (1) | ATE417946T1 (zh) |
AU (1) | AU2004273036A1 (zh) |
DE (1) | DE602004018517D1 (zh) |
WO (1) | WO2005026409A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103117201A (zh) * | 2011-11-17 | 2013-05-22 | 中芯国际集成电路制造(上海)有限公司 | Pecvd装置及半导体器件的形成方法 |
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US7264850B1 (en) * | 1992-12-28 | 2007-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for treating a substrate with a plasma |
US20100330748A1 (en) | 1999-10-25 | 2010-12-30 | Xi Chu | Method of encapsulating an environmentally sensitive device |
US7198832B2 (en) * | 1999-10-25 | 2007-04-03 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US20070196682A1 (en) * | 1999-10-25 | 2007-08-23 | Visser Robert J | Three dimensional multilayer barrier and method of making |
US6866901B2 (en) * | 1999-10-25 | 2005-03-15 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US20090191342A1 (en) * | 1999-10-25 | 2009-07-30 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US20090208754A1 (en) * | 2001-09-28 | 2009-08-20 | Vitex Systems, Inc. | Method for edge sealing barrier films |
US8900366B2 (en) * | 2002-04-15 | 2014-12-02 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US8808457B2 (en) * | 2002-04-15 | 2014-08-19 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
US7510913B2 (en) * | 2003-04-11 | 2009-03-31 | Vitex Systems, Inc. | Method of making an encapsulated plasma sensitive device |
US7648925B2 (en) * | 2003-04-11 | 2010-01-19 | Vitex Systems, Inc. | Multilayer barrier stacks and methods of making multilayer barrier stacks |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US7767498B2 (en) | 2005-08-25 | 2010-08-03 | Vitex Systems, Inc. | Encapsulated devices and method of making |
US7632706B2 (en) * | 2005-10-21 | 2009-12-15 | Spansion Llc | System and method for processing an organic memory cell |
CN100389225C (zh) * | 2005-10-21 | 2008-05-21 | 友达光电股份有限公司 | 等离子体反应腔 |
US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
WO2011123125A1 (en) | 2010-03-31 | 2011-10-06 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
JP2011522381A (ja) | 2008-05-30 | 2011-07-28 | コロラド ステート ユニバーシティ リサーチ ファンデーション | プラズマに基づく化学源装置およびその使用方法 |
WO2009146439A1 (en) | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | System, method and apparatus for generating plasma |
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- 2004-09-03 AU AU2004273036A patent/AU2004273036A1/en not_active Abandoned
- 2004-09-03 JP JP2006526200A patent/JP2007504630A/ja not_active Withdrawn
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CN103117201A (zh) * | 2011-11-17 | 2013-05-22 | 中芯国际集成电路制造(上海)有限公司 | Pecvd装置及半导体器件的形成方法 |
CN103117201B (zh) * | 2011-11-17 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | Pecvd装置及半导体器件的形成方法 |
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WO2005026409A2 (en) | 2005-03-24 |
KR20060121888A (ko) | 2006-11-29 |
US7282244B2 (en) | 2007-10-16 |
DE602004018517D1 (de) | 2009-01-29 |
US20050051094A1 (en) | 2005-03-10 |
WO2005026409A3 (en) | 2005-05-12 |
JP2007504630A (ja) | 2007-03-01 |
ATE417946T1 (de) | 2009-01-15 |
EP1664378B1 (en) | 2008-12-17 |
EP1664378A2 (en) | 2006-06-07 |
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