CN1117890C - 用于电弧等离子体沉积设备的喷嘴式喷射器 - Google Patents
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Abstract
设计和制造一种喷嘴式喷射器，用于采用界面稳定的电弧点燃器作为等离子体发生器的沉积薄膜层的等离子体沉积装置中。该喷嘴式喷射器控制反应剂的喷射、电离和反应，这些功能本身又决定了覆盖层沉积速率、覆盖层面积、覆盖层组合物以及覆盖层质量。
Description
本发明涉及在各种衬底例如玻璃、石英、金属或金属化的材料以及塑料上形成保护膜的电弧等离子沉积技术；更具体地说，涉及一种组合的喷咀式喷射器，用于导引等离子体流和将反应性试剂注入到等离子体中，以便高速沉积透明覆盖层，该覆盖层耐磨损，吸收紫外线或反射红外线。
各种薄膜的技术重要性使各种各样的沉积镀覆方法得到发展。
化学蒸气沉积(CVD)法通过包含所薄膜组成成分的气态反应剂的热活化和表面反应在衬底表面上形成固体薄膜。通过对衬底加热提供热解各种反应剂所需的能量。为了实现合理的反应速率，衬底要加热得相当高的温度，其范围约500°F到2000°F。这种温度妨碍这种方法应用于热敏感衬底材料。
利用在沉积镀覆室中在气体中的放电形成等离子体，由等离子体增强的化学蒸气沉积(PECVD)向反应剂提供能量。通常将衬底浸入到等离子体中。沉积速率一般是慢的。
由于聚碳酸酯具有高的冲击强度、低密度、光透明性以及良好可加工性，所以是一种选择用于上釉以及光学涂覆的常用工程材料。然而，聚碳酸酯材料是软的，缺少像玻璃那样的耐磨性能，以及对超过约300°F的温度是敏感的。前期研究已经表明，利用等离子体增强的化学蒸气沉积(PECVD)法形成的氧化硅覆盖层可以提高聚碳酸酯的耐磨性能，使其适合上釉等应用场合。然而，先前的利用硅烷和氮氧化物作为先质的PECVD技术速度慢，通常沉积速率仅约为每分0.05微米。后来在PECVDK中采用有机硅作先质用于利用等离子体形成耐磨聚合物覆盖层，不过沉积速率并没有明显提高。
本发明的方法对利用本发明的沉积法所制成的物品或制品提供了改进的附着力、热膨胀相容性、辐射防护性，或耐磨性。利用这里公开的装置和方法，通过在高温和低温的片状、膜状和成形衬底材料上进行等离子沉积镀膜可以形成这样的保护覆盖层。
设计和制造了一种喷咀式喷射器，以利用界面稳定的电弧起燃器作为等离子体发生器来进行等离子体沉积薄膜覆盖层。喷咀式喷射器的设计要控制反应剂的喷射、电离和反应，并且这些功能本身又决定了覆盖层的沉积速率、覆盖层面积、覆盖层组合物以及覆盖层质量。利用本发明的喷咀式喷射器，以氧和硅氧烷作为反应剂，已经实验证明在聚碳酸酯和玻璃衬底上可按每分约30微米的沉积速率形成透明的覆盖层。该硅氧烷形成的覆盖层大大提高了聚碳酸酯衬底的耐磨性能。通过用合适的金属有机化合物替代硅氧烷，还可以在塑料衬底上沉积其它氧化物覆盖层，例如氧化锌或氧化钛。这些覆盖层常用作防护红外线或紫外线的覆盖层。本发明的喷咀式喷射器在单一的装置将喷咀的定向控制功能和一个或多个喷射器的反应剂引入功能相组合。
在利用本发明的喷咀式喷射器的电弧等离子体沉积过程中，可用作单体的有机硅化合物包括硅烷和其它硅化合物，该化合物中至少一个硅原子键合到至少一个碳或一个氢原子上，这些化合物例如为硅氧烷类，硅氮烷类和有机硅氧烷类。
这里所公开的喷咀式喷射器适合于与各种等离子体发生装置例如界面稳定的电弧等离子体起燃器结合使用，该装置具有至少一个位于在阴极和阳极之间的水冷电绝缘的板。在4948485和4957062号美国专利中介绍多板式界面稳定的电弧发生装置。
利用多板的串级电弧已用作等离子体源，用于制备类金刚石的碳覆盖层以及分别由碳氢化合物以及有机硅形成的等离子聚合覆盖层。据报道沉积速率为每分钟几微米。然而，覆盖层面积是小的，直径为几厘米，材料的利用程度低，小于约20％。取决于各种条件，还可能在中心沉积区的外侧形成粉末或粉末状的覆盖层。为使该形成覆盖层的技术实用和经济，关键是扩大覆盖层区域、增加沉积速率和使粉末形成降至最低。本发明的喷咀式喷射器实现了这些改进要求。
设计一种喷咀式喷射器，以便改进用于低温等离子体沉积镀膜和实施聚合方法的界面稳定的电弧等离子体发生器的覆盖层性能。将喷淋环或狭缝环喷射器置入喷咀，用于输送气体或蒸气反应剂。喷射器的位置影响气体电离的程度，进而影响反应程度，因此影响覆盖层的化学计量以及结构、最终影响其性能。喷咀式喷射器的形状和尺寸也影响反应的程度、覆盖层面积以及衬底上的热载荷。利用这种喷咀式喷射器，曾在中心以每分钟约30微米的速率在30厘米×30厘米的面积内沉积形成光学上透明的覆盖层。没有这种喷咀式喷射器的粉末状覆盖层形成。
喷咀式喷射器的组成结构包含有：圆柱形和圆锥形的等离子体通道以及2级圆锥形通道和其间的一个圆柱形区。喷咀式喷射器中的圆锥形通道的发散角度范围约从0到60°。在喷头基部处的等离子体通道的开口直径约由4到7毫米。直径较小的通道可用于涂复较小的物品。喷咀式喷射器的长度为1.5到25厘米，借此来控制该可以发生反应的区域的容积。喷咀式喷射器可以为单一整体结构，或者可以由几个部分组装而成，例如带有用于将反应剂引入等离子体中的喷射器的不锈钢主体、用于将喷咀式喷射器安装到等离子体发生器上的铜适配器、以及安装到主体的下游端部上的延伸部分，以便存在于喷咀式喷射器内部的反应区形成合适的容积。喷射器可内置入用于喷射氧的铜适配器内，而且该铜适配器是镀金的以抗氧化。喷咀式喷射器的模块设计结构使得能适应喷头尺寸和气体喷射位置，不再需要分开的导向控制和反应剂喷射装置。
图1是电弧等离子体沉积涂覆系统的断面示意图，该系统包含真空室、等离子体发生器以及本发明的喷咀式喷射器。
图2是等离子体发生器和根据本发明的喷咀式喷射器的断面图。
下面参阅图1，示意表示的电弧等离子体沉积涂覆系统包含真空室反应器1，该反应器具有等离子体发生器2、等离子体处理室4、等离子体入口6和喷咀式喷射器8。经过供气管线3向等离子体发生器提供等离子体气体，例如氩。喷咀式喷射器8装有供氧管线12和一对提供反应剂用管线14和16，管线14和16可以各自独立运行或组合运行。未示出的直空泵系统经过出口23维持等离子体处理室4内的低压。需涂覆的衬底20支承在等离子体处理室内的有温度控制的支承体22上。在等离子体喷射路径中的衬底和喷咀之间安置有适于利用手柄25手动定位或自动定位的可伸缩的挡板24。
参阅图2，利用由阴极2经过电绝缘板6流向水冷阳极4的电子流产生等离子体，该电绝缘板6具有发散形状的中心气体等离子体通道。该装置装有多个均匀间隔开的阴极，但在图上仅示出一个阴极2。各阴极是水冷式的。各阴极安装在装于水冷铜板6上的阴极安装座8上。该板6电绝缘的。经过未示的水管线向冷却水通道9供水。利用水管线12提供阳极4的冷却水，并流过在阳极体内的水道5。处理室内的真空部分地是利用0形密封环15和15a维持的。
通过供气管线14向等离子体发生器提供等离子体气体例如氩。通过该与环形导道18和狭缝式喷射器20相连通的管线16向喷咀提供氧。经过管线22提供的该反应剂输向导管24和各均匀间隔的喷射孔26。如图所示，喷咀具有与导管32和喷射孔34相连通的辅助反应剂供应管线30。该辅助供应系统可用于向在喷咀式喷射器内的活化区或反应区提供另一种反应气体或稀释气体。
喷咀式喷射器包括发散部分40，用于将等离子体和反应物质导向需涂覆的衬底表面。该部分40可以是喷咀装置的整体一部分，也可以设计成可拆卸的延伸部分。如图所示，该延伸部分具有与直接邻近阳极的喷咀部分相同的发散角度。该延伸部发可以随阳极等离子体通道和喷咀式喷射器的相邻部分的形状和几何尺寸改变，例如具有喇叭口或钟形口。
紧固螺钉7是用于将阴极安装座固定到板6和阳极4上的数个螺钉之
本发明提供一种通过将各种反应剂喷射到等离子体中以进行表面处理和在衬底表面上沉积一层透光粘合涂层的装置，该装置包括具有一个或多个阴极以及至少一个阳极的等离子体发生器、可在低于大气压力下工作的处理室、位于在处理室内用于支承衬底的衬底支承装置、与处理室相连通用于将处理室抽真空到低于大气压力的真空泵装置以及喷咀式喷射器，该喷咀式喷射器安装在等离子体发生器的阳极端部，用于将等离子体射向衬底，并将反应剂输送到在喷咀式喷射器内的等离子体中。
喷咀式喷射器包含反应剂输送装置，用于当等离子体由等离子体发生器射出时将反应剂喷射到等离子体中。
喷咀式喷射器通常呈圆锥形，其广口端朝向衬底。喷咀的发散角度和长度决定了装置内所包含的容积。这本身又确定了可用于处理或涂覆衬底表面的活性物质的反应和形成的时间。
用于将反应剂喷入等离子体中的反应剂输送装置位于在喷咀式喷射器的窄口端，并包含至少两个分开的环形注射导管以及用于使反应剂均匀注入到等离子体中的分配装置。
通常喷咀式喷射器从等离子体发生器的阳极端伸入到处理室。然而，该喷咀式喷射器装置可以安装在真空室外的等离子体发生器的阳极端，经过适当的真空密封件与真空室内部相连通。
实验
水冷式串级电弧用作等离子体发生器。该电弧发生器包含铜阳极，该铜阳极利用至少一个或一系列的电绝缘铜盘与镀钍的钨制成的三个针状阴极相隔开。随着氩流过电弧点燃器中的孔的同时，DC电压施加到电极上以产生等离子体。等离子体膨胀通过喷咀式喷射器进入处于由真空泵维持的降低了压力的真空室，因此形成等离子体射流。喷咀式喷射器被加热到约200℃，以避免高沸点的有机硅反应剂的凝结。需涂覆的衬底在适当的加工距离例如距阳极约15到70厘米处利用金属支承台支承在射流轴线上。一可伸缩的挡板用于调节衬底对等离子体的暴露程度。
在通常的沉积操作程序中，利用在衬底和喷咀式喷射器之间的挡板控制氩等离子体。将氧引入喷咀式喷射器，以便产生氧/氩等离子体。在氧喷射位置下游引入含硅的反应剂以开始沉积之前，缩回该挡板并使衬底暴露于氧/氩等离子体中持续一段短的时间。
在表1中比较了喷咀式喷射器对涂覆面积、沉积速率、以及覆盖层的泰伯(Taber)耐磨耗性能。覆盖层约2微米厚。发现对于大面积的涂覆圆锥形的喷咀式喷射器(G273，G241)是最有效的。不用这种喷咀式喷射器通常会形成粉末或粉末状覆盖层。
表1喷咀式喷射器对涂覆性能的影响
G273 G241 G187 G204 G147 G123喷咀式喷射 圆锥形 圆锥形 圆锥形 圆锥形 圆锥- 圆锥-器类型a 圆柱- 圆柱形
圆锥形发散角(°) 40 40 25 25 33 50圆柱形部分 - - - - 1.1 3.0直径(厘米)总喷咀长度b 16 16 21 13.5 13.5 9.5(厘米)氧输送位置b 0.5 0.5 4 4 4 4.5(厘米)硅氧烷输送 5 5 5 5 5 6位置b(厘米)加工距离c 25.5 25.5 33 23 38 38(厘米)衬底 MR7 玻璃 MR7e MR7e PC MR5e硅反应剂d D4 TMDSO TMDSO TMDSO HMDSO HMDSO氩流量(升/分) 1.0 1.0 1.5 1.5 2.0 2.0氧流量(升/分) 0.8 0.8 0.8 0.8 0.06- 0-
0.6 0.93硅氧烷流量 0.27 0.18 0.18 0.18 0.11 0.18(升/分)真空室压 0.15 0.15 0.15 0.15 0.18 0.22力(乇)沉积速率 29 9 10 10 4 10(微米/分)透明涂覆层 43 43 15 7.5 10 7.5面积(厘米直径)Δ在1000 3 - 7 3 6 10次循环后的霾指数％
a圆锥形，圆锥-圆柱-圆锥形，圆锥-圆柱形
b距阳极的距离
c衬底和阳极之间的距离
dD4＝八甲基环四硅氧烷，TMDSO＝四甲基双硅氧烷，HMDSO＝六甲基双硅氧烷
e具有硅氧烷硬涂层的聚碳酸酯
加工距离为由阳极到衬底的距离
D4流量是通过使液体温度保持在80℃下控制的。
在上述各特定实验中，该喷咀式喷射器包括带有两个喷淋头式喷射环的主体、用于将喷咀式喷射器安装到阳极上和将氧注射到等离子体中的适配器、以及朝衬底扩张的延伸部分。25°的2级喷咀式喷射器是具有从4毫米扩张到11毫米的阳极适配器的喷射器，接着是直径11毫米的圆柱形部分以及按25°扩张的主体。25°的4英寸圆锥形喷咀式喷射器始终按25°扩张，具有氧喷射适配器，并且圆锥形延伸4英寸长。40°的4英寸圆锥形喷咀式喷射器始终按40°扩张，具有带氧喷射器的阳极适配器，并且圆锥形延伸4英寸长。40°的4英寸长号形喷咀式喷射器与40°的4英寸圆锥形喷咀式喷射器相似，不同的是通过使用由长号形的嗽叭口截下的4英寸部分使得该延伸段张开得更大。
Claims (6)
1一种整体的喷咀式喷射器，以用于电弧等离子体沉积装置，该装置包括有等离子体气体入口的电弧等离子发生器、至少一个阴极、具有扩张的等离子体通道的阳极、所述等离子通道是依等离子体气体流动的方向通过设备而扩张的，安装在阳极上的喷咀式喷射器，所述喷咀式喷射器具有从阳极依等离子体气体流动的方向通过设备而延伸的扩张通道、用于将氧注射到在阳极附近的等离子体中的氧喷射器以及至少一个反应剂喷射器以用于当等离子体膨胀进入扩张通道中时将反应气体喷射到等离子体中。
2一种通过将反应剂喷射到等离子体中以进行表面处理和在衬底表面上沉积一层透光粘合涂层的装置，该装置包括具有一个或多个阴极以及至少一个阳极的等离子体发生器、所述阳极具有一依等离子体流动的方向而扩张的孔，可在低于大气压力下工作的处理室、位于在处理室内用于支承衬底的衬底支承装置、与处理室相连通用于将处理室抽真空到低于大气压力的真空泵装置以及喷咀式喷射器，该喷咀式喷射器安装到等离子体发生器的阳极端部，用于将等离子体射向衬底，并将反应剂输送到在喷咀式喷射器内的等离子体中，所述喷咀式喷射器包括一依等离子体流动方向而扩张的通道。
3根据权利要求2所述的装置，其中该喷咀式喷射器包含反应剂输送装置，用于当等离子体由等离子体发生器射出时反应剂喷射到等离子体中。
4根据权利要求2所述的装置，其中该喷咀式喷射器呈圆锥形，其广口端朝向衬底。
5根据权利要求2所述的装置，其中用于将反应剂喷射到等离子体中的反应剂输送装置位于喷咀式喷射器的窄口端，并包含至少两个分开的喷射导管和环形分配装置，用于将反应剂均匀注入到等离子体中。
6根据权利要求2所述的装置，其中该喷咀式喷射器由等离子体发生器的阳极端伸入到处理室。
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| US033862 | 1998-03-03 | ||
| US09/033,862 US6213049B1 (en) | 1997-06-26 | 1998-03-03 | Nozzle-injector for arc plasma deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1210902A CN1210902A (zh) | 1999-03-17 |
| CN1117890C true CN1117890C (zh) | 2003-08-13 |
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Country Status (7)
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Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6015595A (en) * | 1998-05-28 | 2000-01-18 | Felts; John T. | Multiple source deposition plasma apparatus |
| US6365016B1 (en) | 1999-03-17 | 2002-04-02 | General Electric Company | Method and apparatus for arc plasma deposition with evaporation of reagents |
| US7091605B2 (en) * | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
| TW588222B (en) * | 2000-02-10 | 2004-05-21 | Asml Netherlands Bv | Cooling of voice coil motors in lithographic projection apparatus |
| JP4553471B2 (ja) * | 2000-09-19 | 2010-09-29 | 東京エレクトロン株式会社 | 処理装置及び処理システム |
| US6641673B2 (en) * | 2000-12-20 | 2003-11-04 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
| US6397776B1 (en) * | 2001-06-11 | 2002-06-04 | General Electric Company | Apparatus for large area chemical vapor deposition using multiple expanding thermal plasma generators |
| US6681716B2 (en) * | 2001-11-27 | 2004-01-27 | General Electric Company | Apparatus and method for depositing large area coatings on non-planar surfaces |
| US6948448B2 (en) * | 2001-11-27 | 2005-09-27 | General Electric Company | Apparatus and method for depositing large area coatings on planar surfaces |
| NL1020634C2 (nl) * | 2002-05-21 | 2003-11-24 | Otb Group Bv | Werkwijze voor het passiveren van een halfgeleider substraat. |
| US7282244B2 (en) * | 2003-09-05 | 2007-10-16 | General Electric Company | Replaceable plate expanded thermal plasma apparatus and method |
| KR101224310B1 (ko) * | 2004-03-09 | 2013-01-21 | 엑사테크 엘.엘.씨. | 팽창성 열 플라즈마 침착 시스템 |
| WO2005098083A2 (en) * | 2004-04-07 | 2005-10-20 | Michigan State University | Miniature microwave plasma torch application and method of use thereof |
| CN101563182B (zh) * | 2005-09-07 | 2012-08-15 | 普拉提奥股份公司 | 产生热能的方法 |
| DE102006038780A1 (de) * | 2006-08-18 | 2008-02-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Herstellen einer Beschichtung |
| KR101432257B1 (ko) * | 2006-10-24 | 2014-08-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 원자 층 증착을 위한 보텍스 챔버 리드 |
| US8945219B1 (en) | 2007-05-11 | 2015-02-03 | SDCmaterials, Inc. | System for and method of introducing additives to biological materials using supercritical fluids |
| US8575059B1 (en) | 2007-10-15 | 2013-11-05 | SDCmaterials, Inc. | Method and system for forming plug and play metal compound catalysts |
| CA2658210A1 (en) * | 2008-04-04 | 2009-10-04 | Sulzer Metco Ag | Method and apparatus for the coating and for the surface treatment of substrates by means of a plasma beam |
| KR101750841B1 (ko) * | 2009-02-05 | 2017-06-26 | 오엘리콘 멧코 아게, 볼렌 | 기재 표면의 코팅 또는 처리를 위한 플라즈마 코팅 시스템 및 그 방법 |
| US9039916B1 (en) | 2009-12-15 | 2015-05-26 | SDCmaterials, Inc. | In situ oxide removal, dispersal and drying for copper copper-oxide |
| US9149797B2 (en) | 2009-12-15 | 2015-10-06 | SDCmaterials, Inc. | Catalyst production method and system |
| US8557727B2 (en) | 2009-12-15 | 2013-10-15 | SDCmaterials, Inc. | Method of forming a catalyst with inhibited mobility of nano-active material |
| US8652992B2 (en) | 2009-12-15 | 2014-02-18 | SDCmaterials, Inc. | Pinning and affixing nano-active material |
| US8545652B1 (en) | 2009-12-15 | 2013-10-01 | SDCmaterials, Inc. | Impact resistant material |
| US8470112B1 (en) | 2009-12-15 | 2013-06-25 | SDCmaterials, Inc. | Workflow for novel composite materials |
| US8803025B2 (en) * | 2009-12-15 | 2014-08-12 | SDCmaterials, Inc. | Non-plugging D.C. plasma gun |
| US9126191B2 (en) | 2009-12-15 | 2015-09-08 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
| WO2011108671A1 (ja) * | 2010-03-04 | 2011-09-09 | イマジニアリング株式会社 | 被膜形成装置、及び被膜形成物の製造方法 |
| US8669202B2 (en) | 2011-02-23 | 2014-03-11 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
| US8361607B2 (en) | 2011-04-14 | 2013-01-29 | Exatec Llc | Organic resin laminate |
| CN103502333B (zh) | 2011-04-14 | 2016-05-04 | 埃克阿泰克有限责任公司 | 有机树脂层压板 |
| KR20140071364A (ko) | 2011-08-19 | 2014-06-11 | 에스디씨머티리얼스, 인코포레이티드 | 촉매작용에 사용하기 위한 코팅 기판 및 촉매 변환기 및 기판을 워시코트 조성물로 코팅하는 방법 |
| EP2747921B1 (en) | 2011-08-26 | 2017-11-01 | Exatec, LLC. | Organic resin laminate, methods of making and using the same, and articles comprising the same |
| US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
| US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
| US9586179B2 (en) | 2013-07-25 | 2017-03-07 | SDCmaterials, Inc. | Washcoats and coated substrates for catalytic converters and methods of making and using same |
| RU2541349C1 (ru) * | 2013-10-11 | 2015-02-10 | Федеральное государственное бюджетное учреждение науки Институт физического материаловедения Сибирского отделения Российской академии наук (ИФМ СО РАН) | Высокоресурсный электродуговой генератор низкотемпературной плазмы с защитным наноструктурированным углеродным покрытием электродов |
| KR20160074566A (ko) | 2013-10-22 | 2016-06-28 | 에스디씨머티리얼스, 인코포레이티드 | 대형 디젤 연소 엔진용 촉매 디자인 |
| US9517448B2 (en) | 2013-10-22 | 2016-12-13 | SDCmaterials, Inc. | Compositions of lean NOx trap (LNT) systems and methods of making and using same |
| EP3060693B1 (en) * | 2013-10-25 | 2018-06-27 | United Technologies Corporation | Plasma spraying system with adjustable coating medium nozzle |
| US9687811B2 (en) | 2014-03-21 | 2017-06-27 | SDCmaterials, Inc. | Compositions for passive NOx adsorption (PNA) systems and methods of making and using same |
| SG11201610612SA (en) * | 2014-06-20 | 2017-02-27 | Youtec Co Ltd | Plasma cvd device and method for producing magnetic recording medium |
| CN104046946A (zh) * | 2014-07-04 | 2014-09-17 | 苏州普京真空技术有限公司 | 真空电离镀膜机 |
| WO2016158054A1 (ja) * | 2015-03-30 | 2016-10-06 | 東京エレクトロン株式会社 | 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法 |
| JP6545053B2 (ja) * | 2015-03-30 | 2019-07-17 | 東京エレクトロン株式会社 | 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法 |
| DE102016104863B4 (de) * | 2016-03-16 | 2023-11-02 | Lisa Dräxlmaier GmbH | Vorrichtung zum Bedampfen eines Bauteils |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0223104A1 (de) * | 1985-10-29 | 1987-05-27 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Beschichtung für ein Substrat und Verfahren zu dessen Herstellung |
| US4948485A (en) * | 1988-11-23 | 1990-08-14 | Plasmacarb Inc. | Cascade arc plasma torch and a process for plasma polymerization |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3892882A (en) | 1973-05-25 | 1975-07-01 | Union Carbide Corp | Process for plasma flame spray coating in a sub-atmospheric pressure environment |
| GB8713986D0 (en) | 1987-06-16 | 1987-07-22 | Shell Int Research | Apparatus for plasma surface treating |
| NL8701530A (nl) | 1987-06-30 | 1989-01-16 | Stichting Fund Ond Material | Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze. |
| US4882465A (en) * | 1987-10-01 | 1989-11-21 | Olin Corporation | Arcjet thruster with improved arc attachment for enhancement of efficiency |
| US5104634A (en) | 1989-04-20 | 1992-04-14 | Hercules Incorporated | Process for forming diamond coating using a silent discharge plasma jet process |
| US5356674A (en) | 1989-05-04 | 1994-10-18 | Deutsche Forschungsanstalt Fuer Luft-Raumfahrt E.V. | Process for applying ceramic coatings using a plasma jet carrying a free form non-metallic element |
| US5358596A (en) | 1992-07-02 | 1994-10-25 | The Board Of Trustees Of The Leland Stanford Junior University | Method and apparatus for growing diamond films |
| DE9215133U1 (zh) | 1992-11-06 | 1993-01-28 | Plasma-Technik Ag, Wohlen, Ch | |
| US5278384A (en) | 1992-12-03 | 1994-01-11 | Plasmacarb Inc. | Apparatus and process for the treatment of powder particles for modifying the surface properties of the individual particles |
| US5679167A (en) | 1994-08-18 | 1997-10-21 | Sulzer Metco Ag | Plasma gun apparatus for forming dense, uniform coatings on large substrates |
-
1998
- 1998-03-03 US US09/033,862 patent/US6213049B1/en not_active Expired - Lifetime
- 1998-05-21 CA CA002238158A patent/CA2238158A1/en not_active Abandoned
- 1998-06-18 SG SG1998001462A patent/SG76546A1/en unknown
- 1998-06-25 CN CN98115080A patent/CN1117890C/zh not_active Expired - Lifetime
- 1998-06-26 DE DE69826183T patent/DE69826183T2/de not_active Expired - Lifetime
- 1998-06-26 EP EP98305071A patent/EP0887110B1/en not_active Expired - Lifetime
- 1998-06-26 JP JP10179481A patent/JPH1180963A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0223104A1 (de) * | 1985-10-29 | 1987-05-27 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Beschichtung für ein Substrat und Verfahren zu dessen Herstellung |
| US4948485A (en) * | 1988-11-23 | 1990-08-14 | Plasmacarb Inc. | Cascade arc plasma torch and a process for plasma polymerization |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69826183T2 (de) | 2005-11-17 |
| EP0887110B1 (en) | 2004-09-15 |
| JPH1180963A (ja) | 1999-03-26 |
| US6213049B1 (en) | 2001-04-10 |
| DE69826183D1 (de) | 2004-10-21 |
| SG76546A1 (en) | 2000-11-21 |
| EP0887110A1 (en) | 1998-12-30 |
| CN1210902A (zh) | 1999-03-17 |
| CA2238158A1 (en) | 1998-12-26 |
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