CN1881053A - 有源-矩阵寻址基板及其制造方法 - Google Patents
有源-矩阵寻址基板及其制造方法 Download PDFInfo
- Publication number
- CN1881053A CN1881053A CNA2006100937965A CN200610093796A CN1881053A CN 1881053 A CN1881053 A CN 1881053A CN A2006100937965 A CNA2006100937965 A CN A2006100937965A CN 200610093796 A CN200610093796 A CN 200610093796A CN 1881053 A CN1881053 A CN 1881053A
- Authority
- CN
- China
- Prior art keywords
- insulation course
- signal line
- pixel electrode
- electrode
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000011159 matrix material Substances 0.000 title abstract description 36
- 239000003989 dielectric material Substances 0.000 claims abstract description 29
- 238000009413 insulation Methods 0.000 claims description 220
- 239000000203 mixture Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 40
- 208000034189 Sclerosis Diseases 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- -1 acryl Chemical group 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 12
- 239000004925 Acrylic resin Substances 0.000 abstract description 2
- 229920000178 Acrylic resin Polymers 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 20
- 239000010408 film Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000005684 electric field Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000007850 degeneration Effects 0.000 description 6
- 230000003111 delayed effect Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Geometry (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005177403A JP4863101B2 (ja) | 2005-06-17 | 2005-06-17 | アクティブマトリクス基板及びその製造方法 |
JP2005177403 | 2005-06-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1881053A true CN1881053A (zh) | 2006-12-20 |
CN100480819C CN100480819C (zh) | 2009-04-22 |
Family
ID=37519302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100937965A Active CN100480819C (zh) | 2005-06-17 | 2006-06-19 | 有源-矩阵寻址基板及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7465594B2 (zh) |
JP (1) | JP4863101B2 (zh) |
CN (1) | CN100480819C (zh) |
TW (1) | TWI329929B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8619225B2 (en) | 2007-03-28 | 2013-12-31 | Japan Display West Inc. | Liquid crystal device with pixel electrode under the common electrode and thinner than drain electrode, method of manufacturing liquid crystal device, and electronic apparatus |
CN101840116B (zh) * | 2009-03-16 | 2014-02-26 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN104793412A (zh) * | 2014-01-17 | 2015-07-22 | 株式会社日本显示器 | 液晶显示装置 |
CN105652531A (zh) * | 2016-03-04 | 2016-06-08 | 友达光电股份有限公司 | 阵列基板以及平面转换液晶显示面板 |
CN107346079A (zh) * | 2016-05-04 | 2017-11-14 | 三星显示有限公司 | 液晶显示装置及其制造方法 |
CN111176034A (zh) * | 2020-01-06 | 2020-05-19 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
CN114779544A (zh) * | 2022-03-29 | 2022-07-22 | 武汉华星光电技术有限公司 | Tft基板及其制作方法、液晶显示面板和oled显示面板 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9612489B2 (en) * | 2009-02-13 | 2017-04-04 | Apple Inc. | Placement and shape of electrodes for use in displays |
TWI471672B (zh) | 2012-07-04 | 2015-02-01 | Chunghwa Picture Tubes Ltd | 顯示面板的畫素結構及其製造方法 |
JP2017151277A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社ジャパンディスプレイ | 液晶表示装置、配線基板、及び、センサ付き表示装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1020338A (ja) * | 1996-07-02 | 1998-01-23 | Hitachi Ltd | 液晶表示装置 |
JP2002323706A (ja) | 2001-02-23 | 2002-11-08 | Nec Corp | 横電界方式のアクティブマトリクス型液晶表示装置及びその製造方法 |
JP3793915B2 (ja) * | 2001-02-28 | 2006-07-05 | 株式会社日立製作所 | 液晶表示装置 |
JP2003131240A (ja) * | 2001-10-29 | 2003-05-08 | Hitachi Ltd | 液晶表示装置 |
JP3792670B2 (ja) * | 2002-04-04 | 2006-07-05 | Nec液晶テクノロジー株式会社 | 横電界方式のアクティブマトリクス型液晶表示装置及びその製造方法 |
JP2003304065A (ja) * | 2002-04-08 | 2003-10-24 | Sony Corp | 回路基板装置及びその製造方法、並びに半導体装置及びその製造方法 |
JP4720970B2 (ja) | 2003-03-19 | 2011-07-13 | 日本電気株式会社 | 液晶表示装置 |
JP4174428B2 (ja) | 2004-01-08 | 2008-10-29 | Nec液晶テクノロジー株式会社 | 液晶表示装置 |
-
2005
- 2005-06-17 JP JP2005177403A patent/JP4863101B2/ja active Active
-
2006
- 2006-05-17 US US11/435,031 patent/US7465594B2/en active Active
- 2006-05-19 TW TW095117799A patent/TWI329929B/zh not_active IP Right Cessation
- 2006-06-19 CN CNB2006100937965A patent/CN100480819C/zh active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8619225B2 (en) | 2007-03-28 | 2013-12-31 | Japan Display West Inc. | Liquid crystal device with pixel electrode under the common electrode and thinner than drain electrode, method of manufacturing liquid crystal device, and electronic apparatus |
CN101840116B (zh) * | 2009-03-16 | 2014-02-26 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN104793412A (zh) * | 2014-01-17 | 2015-07-22 | 株式会社日本显示器 | 液晶显示装置 |
CN105652531A (zh) * | 2016-03-04 | 2016-06-08 | 友达光电股份有限公司 | 阵列基板以及平面转换液晶显示面板 |
CN105652531B (zh) * | 2016-03-04 | 2018-11-30 | 友达光电股份有限公司 | 阵列基板以及平面转换液晶显示面板 |
CN107346079A (zh) * | 2016-05-04 | 2017-11-14 | 三星显示有限公司 | 液晶显示装置及其制造方法 |
CN107346079B (zh) * | 2016-05-04 | 2021-12-14 | 三星显示有限公司 | 液晶显示装置及其制造方法 |
CN111176034A (zh) * | 2020-01-06 | 2020-05-19 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
CN114779544A (zh) * | 2022-03-29 | 2022-07-22 | 武汉华星光电技术有限公司 | Tft基板及其制作方法、液晶显示面板和oled显示面板 |
Also Published As
Publication number | Publication date |
---|---|
JP2006350059A (ja) | 2006-12-28 |
US7465594B2 (en) | 2008-12-16 |
CN100480819C (zh) | 2009-04-22 |
US20060284178A1 (en) | 2006-12-21 |
JP4863101B2 (ja) | 2012-01-25 |
TWI329929B (en) | 2010-09-01 |
TW200705667A (en) | 2007-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: NEC LCD TECHNOLOGIES, LTD. Free format text: FORMER NAME: NEC LCD TECH CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kawasaki, Kanagawa, Japan Patentee after: NLT TECHNOLOGIES, Ltd. Address before: Kawasaki, Kanagawa, Japan Patentee before: NEC LCD Technologies, Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Kawasaki City, Kanagawa Prefecture, Japan Patentee after: TIANMA JAPAN, Ltd. Address before: Kawasaki City, Kanagawa Prefecture, Japan Patentee before: NLT TECHNOLOGIES, Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200616 Address after: 1918 Tianma Building, Liuxian Avenue, Beizhan community, Minzhi street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Kawasaki City, Kanagawa Prefecture, Japan Patentee before: TIANMA JAPAN, Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201216 Address after: 5-6 / F, building D, huilongda Industrial Park, Shuitian Private Industrial Park, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Haiyun Communication Co.,Ltd. Address before: 518131 Tianma Building, Liuxian Avenue, Beizhan community, Minzhi street, Longhua District, Shenzhen City, Guangdong Province Patentee before: Tianma Micro-Electronics Co.,Ltd. Effective date of registration: 20201216 Address after: Room a-430, 4 / F, block a, phase II, Guangxi Huike Technology Co., Ltd., No. 336, Beihai Avenue East extension line, Beihai Industrial Park, Guangxi Zhuang Autonomous Region Patentee after: BEIHAI HKC PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 5-6 / F, building D, huilongda Industrial Park, Shuitian Private Industrial Park, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Haiyun Communication Co.,Ltd. |