CN1877876A - 发光二极管及其封装方法 - Google Patents

发光二极管及其封装方法 Download PDF

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CN1877876A
CN1877876A CNA200610060860XA CN200610060860A CN1877876A CN 1877876 A CN1877876 A CN 1877876A CN A200610060860X A CNA200610060860X A CN A200610060860XA CN 200610060860 A CN200610060860 A CN 200610060860A CN 1877876 A CN1877876 A CN 1877876A
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吴质朴
马学进
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Shenzhen Aolunde Components Co., Ltd.
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract

本发明公开了一种具有共晶金属层的发光二极管及其封装方法，所述的发光二极管包括竖式支架、芯片、引线和外壳，其中所述的芯片的底部还设置有一共晶金属层，该共晶金属层位于芯片和支架之间。本发明提出的方法不含传统封装工艺的银浆层，简化了固晶工艺，提高封装后的器件可靠性，而且降低了封装的成本。

Description

发光二极管及其封装方法
【技术领域】
本发明涉及发光二极管，尤其涉及一种具有共晶金属层的发光二极管及其封装方法。
【背景技术】
发光二极管是一种将电流顺向通到半导体PN结处而发光的器件。它是当今最炙手可热的光源技术，具有很多相对于传统光源的优点，首先最显著的优点是节能，比日光灯节约50％电能，而且采用低压供电方式，更安全可靠；其次，发光二极管的典型工作寿命长达十万小时，作为固态光源，发光二极管可靠性高，从而在苛求和困难的使用环境中成为完美的光源；最后是发光二极管不仅仅在生产上所需的能源和材料少，它还不含有在荧光灯里常见的有毒物质水银，对环境友好。
现有竖式支架发光二极管芯片的封装一般使用银浆固晶工艺，银浆固晶工艺是：点胶→固晶→烧结，它存在的缺点是封装工序复杂，且封装后器件可靠性差。
【发明内容】
本发明的目的是解决发光二极管封装中银浆固晶工艺复杂，封装后器件可靠性差的技术问题，提出一种具有共晶金属层的发光二极管及其封装方法。
为解决上述现有技术中存在的问题，本发明提出的发光二极管包括竖式支架、芯片、引线和环氧树脂外壳，其特征在于：所述的芯片底部还设置有一共晶金属层，该共晶金属层位于芯片和支架之间。
所述的共晶金属层可由金、金锡、金锗、金硅、铅锡、铅银铟或铅银锡中的任一种材料制成。
本发明提出的发光二极管的封装方法包括下列步骤：
(1)、将发光二极管的竖式支架进行加热；
(2)、将具有共晶金属层的发光二极管芯片放置于支架上进行共晶粘结，共晶粘结时施加压力；同时使用保护气体对芯片进行吹扫，防止芯片电极在高温下氧化。
步骤(1)中竖式支架加热的温度范围在250-500摄氏度。
步骤(2)中的压力范围在25-300克。
步骤(2)中的保护气体可以是氮气，或氮氢混合气体。
与现有技术相比，本发明提出的发光二极管在芯片底部设有共晶金属层，该共晶金属层位于芯片和支架之间，封装时不含有传统封装工艺的银浆层，简化了竖式支架发光二极管芯片封装固晶工艺，而且相对于传统的发光二极管结构有更好的导热能力，从而提高了竖式支架发光二极管芯片封装后的散热效果，增加了竖式支架发光二极管的可靠性，同时降低了后段封装的成本。
【附图说明】
下面结合附图和实施例对本发明作详细的说明，其中：
图1是本发明发光二极管的一实施例的结构示意图；
图2是本发明发光二极管的另一实施例的结构示意图；
图3、图4、图5是现有技术发光二极管封装固晶工艺的示意图；
图6是本发明发光二极管的封装固晶工艺图。
【具体实施方式】
现有的发光二极管封装工艺采用银浆固晶工艺，如图3、图4和图5所示，包括：点胶、固晶和烧结。首先，点胶工序过程中必须对胶的多少进行精密控制，银浆6少了不能很好固定芯片3，多了则可能会溢出造成短路或者其它问题；其次，烧结工序温度在150摄氏度左右，时间在120分钟左右，需要比较长的工时；最重要的是一般的固晶银浆的导热性能比较差，造成热量不能很好的散出，从而造成器件可靠性变差。
图1是本发明提出的发光二极管的结构示意图，包括竖式支架1、芯片3、引线4和环氧树脂外壳5。所述的芯片3的底部设置有一共晶金属层2。在该实施例中，采用单引线结构，引线4连接发光二极管芯片3的一个电极和竖式支架的一极；另一个电极通过共晶金属层连接竖式支架的另一极。
图2显示了本发明提出的发光二极管的另一个实施例的结构，在该实施例中，发光二极管包括竖式支架1、芯片3、引线4和环氧树脂外壳5。芯片3的底部设置有一共晶金属层2。在该实施例中，采用双引线结构，引线分别连接发光二极管芯片的两个电极和竖式支架的双极。
本发明中增设的共晶金属层2可以采用金、金锡、金锗、金硅、铅锡、铅银铟或铅银锡等金属材料中的任何一种制造。
本发明提出的芯片的封装方法包括下列步骤(参阅图6)：
(1)、将发光二极管的竖式支架进行加热；
(2)、将采用具有共晶金属层的发光二极管芯片放置于竖式支架上进行共晶粘结，共晶粘结时施加压力；同时使用保护气体对芯片进行吹扫，防止芯片电极在高温下氧化。
步骤(1)中竖式支架加热的温度范围在250-500摄氏度。
步骤(2)中的压力范围在25-300克。
步骤(2)中的保护气体是氮气或氮氢混合气体。
经实验证明，本发明提出的新型结构，简化了竖式支架发光二极管芯片的固晶工艺，降低了后段封装成本达15％，而且提高了竖式支架发光二极管芯片封装后的散热效果，提高了竖式支架发光二极管的可靠性。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以作出若干改进，这些改进也应视为本发明的保护范围。

Claims (7)

1、一种发光二极管，包括竖式支架(1)、芯片(3)、引线(4)和外壳(5)，其特征在于：所述的芯片(3)底部还设置有一共晶金属层(2)，该共晶金属层(2)位于芯片和支架之间。
2、如权利要求1所述的发光二极管，其特征在于：所述的共晶金属层(2)由金、金锡、金锗、金硅、铅锡、铅银铟或铅银锡中的任一种材料制成。
3、一种权利要求1所述发光二极管的封装方法，其特征在于包括下列步骤：
(1)、将发光二极管的竖式支架进行加热；
(2)、将具有共晶金属层的发光二极管芯片放置于支架上进行共晶粘结，共晶粘结时施加压力；同时使用保护气体对芯片进行吹扫，防止芯片电极在高温下氧化。
4、如权利要求3所述的方法，其特征在于：步骤(1)中竖式支架加热的温度范围在250-500摄氏度。
5、如权利要求3所述的方法，其特征在于：步骤(2)中的压力范围在25-300克。
6、如权利要求3所述的方法，其特征在于：步骤(2)中的保护气体是氮气。
7、如权利要求3所述的方法，其特征在于：步骤(2)中的保护气体是氮氢混合气体。
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CN102437267A (zh) * 2010-12-10 2012-05-02 奉化市匡磊半导体照明有限公司 金属基底板发光芯片封装结构
CN102447044A (zh) * 2010-12-10 2012-05-09 奉化市匡磊半导体照明有限公司 绝缘底板发光芯片封装结构
CN103427002A (zh) * 2013-08-28 2013-12-04 刘振亮 Led smd氮气封装工艺

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Publication number Priority date Publication date Assignee Title
CN102437267A (zh) * 2010-12-10 2012-05-02 奉化市匡磊半导体照明有限公司 金属基底板发光芯片封装结构
CN102447044A (zh) * 2010-12-10 2012-05-09 奉化市匡磊半导体照明有限公司 绝缘底板发光芯片封装结构
CN102437267B (zh) * 2010-12-10 2014-05-14 罗容 金属基底板发光芯片封装结构
CN103427002A (zh) * 2013-08-28 2013-12-04 刘振亮 Led smd氮气封装工艺
CN103427002B (zh) * 2013-08-28 2016-08-10 刘振亮 Led smd氮气封装工艺

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