CN1868065A - 具有由多环结构形成的电感环的集成电路封装 - Google Patents

具有由多环结构形成的电感环的集成电路封装 Download PDF

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Publication number
CN1868065A
CN1868065A CNA2004800298246A CN200480029824A CN1868065A CN 1868065 A CN1868065 A CN 1868065A CN A2004800298246 A CNA2004800298246 A CN A2004800298246A CN 200480029824 A CN200480029824 A CN 200480029824A CN 1868065 A CN1868065 A CN 1868065A
Authority
CN
China
Prior art keywords
pin
conductor
chip
semiconductor packages
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2004800298246A
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English (en)
Chinese (zh)
Inventor
具利度
许炯基
李康润
李正雨
朴畯培
李京浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GCT Semiconductor Inc
Original Assignee
GCT Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GCT Semiconductor Inc filed Critical GCT Semiconductor Inc
Publication of CN1868065A publication Critical patent/CN1868065A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/501—Inductive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
CNA2004800298246A 2003-08-28 2004-08-27 具有由多环结构形成的电感环的集成电路封装 Pending CN1868065A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49835403P 2003-08-28 2003-08-28
US60/498,354 2003-08-28

Publications (1)

Publication Number Publication Date
CN1868065A true CN1868065A (zh) 2006-11-22

Family

ID=34272661

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2004800298246A Pending CN1868065A (zh) 2003-08-28 2004-08-27 具有由多环结构形成的电感环的集成电路封装

Country Status (8)

Country Link
US (1) US7768097B2 (https=)
EP (1) EP1665383A2 (https=)
JP (1) JP2007504716A (https=)
KR (1) KR100819134B1 (https=)
CN (1) CN1868065A (https=)
CA (1) CA2537259A1 (https=)
TW (1) TW200520121A (https=)
WO (1) WO2005022597A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112368832A (zh) * 2018-06-22 2021-02-12 微芯片技术股份有限公司 具有增强型集成电路的半导体器件及其制造方法

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US7489022B2 (en) * 2005-08-02 2009-02-10 Viasat, Inc. Radio frequency over-molded leadframe package
CN100511664C (zh) * 2006-07-11 2009-07-08 日月光半导体制造股份有限公司 芯片封装结构
US8035218B2 (en) * 2009-11-03 2011-10-11 Intel Corporation Microelectronic package and method of manufacturing same
US9999129B2 (en) * 2009-11-12 2018-06-12 Intel Corporation Microelectronic device and method of manufacturing same
US9236872B2 (en) 2012-03-12 2016-01-12 Seiko Epson Corporation Voltage-controlled oscillator, signal generation apparatus, and electronic device
KR101888401B1 (ko) * 2012-05-09 2018-08-16 삼성전자주식회사 집적 회로를 위한 인덕터
FR3099667A1 (fr) * 2019-07-29 2021-02-05 Stmicroelectronics S.R.L. Oscillateur commandé en tension à transformateur actif distribué
CN111835308B (zh) * 2020-07-15 2023-09-05 武汉博畅通信设备有限责任公司 一种数控电调滤波器
CN114864531B (zh) * 2021-02-03 2025-12-19 瑞昱半导体股份有限公司 集成电路导线架及其半导体装置

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US5175884A (en) * 1990-06-01 1992-12-29 Motorola, Inc. Voltage controlled oscillator with current control
JP2581398B2 (ja) * 1993-07-12 1997-02-12 日本電気株式会社 Ｐｌｌ周波数シンセサイザ
US5739730A (en) * 1995-12-22 1998-04-14 Microtune, Inc. Voltage controlled oscillator band switching technique
EP0829143A1 (en) * 1996-04-02 1998-03-18 Koninklijke Philips Electronics N.V. Portable radio comprising a connectable circuit
GB2317279B (en) * 1996-09-11 2001-01-24 Nec Technologies Frequency synthesisers
US5839184A (en) * 1997-07-10 1998-11-24 Vlsi Technology, Inc. Method for creating on-package inductors for use with integrated circuits
US5909050A (en) * 1997-09-15 1999-06-01 Microchip Technology Incorporated Combination inductive coil and integrated circuit semiconductor chip in a single lead frame package and method therefor
US5886393A (en) * 1997-11-07 1999-03-23 National Semiconductor Corporation Bonding wire inductor for use in an integrated circuit package and method
US6034423A (en) * 1998-04-02 2000-03-07 National Semiconductor Corporation Lead frame design for increased chip pinout
US6137372A (en) * 1998-05-29 2000-10-24 Silicon Laboratories Inc. Method and apparatus for providing coarse and fine tuning control for synthesizing high-frequency signals for wireless communications
US6194947B1 (en) * 1998-07-24 2001-02-27 Global Communication Technology Inc. VCO-mixer structure
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US6194774B1 (en) * 1999-03-10 2001-02-27 Samsung Electronics Co., Ltd. Inductor including bonding wires
KR100877253B1 (ko) * 1999-08-02 2009-01-07 콸콤 인코포레이티드 잡음 면역성을 가진 다중 대역 전압제어 발진기를 위한방법 및 장치
US6323735B1 (en) * 2000-05-25 2001-11-27 Silicon Laboratories, Inc. Method and apparatus for synthesizing high-frequency signals utilizing on-package oscillator circuit inductors
JP2002076250A (ja) * 2000-08-29 2002-03-15 Nec Corp 半導体装置
US6538336B1 (en) * 2000-11-14 2003-03-25 Rambus Inc. Wirebond assembly for high-speed integrated circuits
DE10061241A1 (de) * 2000-12-08 2002-06-27 Infineon Technologies Ag Oszillatorschaltung
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US6621140B1 (en) * 2002-02-25 2003-09-16 Rf Micro Devices, Inc. Leadframe inductors
KR20020069181A (ko) * 2002-05-13 2002-08-29 주식회사 엠씨링크 에프엠 전송신호 발생기용 전압조정 발진기의 집적회로 설계방법
US6876266B2 (en) * 2002-06-10 2005-04-05 Gct Semiconductor, Inc. LC oscillator with wide tuning range and low phase noise
KR100399585B1 (ko) * 2002-09-12 2003-09-26 (주) 가인테크 상보성 트랜지스터를 이용한 전압 제어 발진기

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112368832A (zh) * 2018-06-22 2021-02-12 微芯片技术股份有限公司 具有增强型集成电路的半导体器件及其制造方法
CN112368832B (zh) * 2018-06-22 2021-12-28 微芯片技术股份有限公司 具有增强型集成电路的半导体器件及其制造方法

Also Published As

Publication number Publication date
JP2007504716A (ja) 2007-03-01
TW200520121A (en) 2005-06-16
KR100819134B1 (ko) 2008-04-03
US7768097B2 (en) 2010-08-03
US20050045986A1 (en) 2005-03-03
KR20060115857A (ko) 2006-11-10
CA2537259A1 (en) 2005-03-10
EP1665383A2 (en) 2006-06-07
WO2005022597A3 (en) 2005-08-04
WO2005022597A2 (en) 2005-03-10

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