CN1841735A - 包含像素的有机电子设备 - Google Patents

包含像素的有机电子设备 Download PDF

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Publication number
CN1841735A
CN1841735A CNA2005100035317A CN200510003531A CN1841735A CN 1841735 A CN1841735 A CN 1841735A CN A2005100035317 A CNA2005100035317 A CN A2005100035317A CN 200510003531 A CN200510003531 A CN 200510003531A CN 1841735 A CN1841735 A CN 1841735A
Authority
CN
China
Prior art keywords
transistor
pixel
electronic component
capacitive
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005100035317A
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English (en)
Chinese (zh)
Inventor
俞钢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Displays Inc
Original Assignee
DuPont Displays Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DuPont Displays Inc filed Critical DuPont Displays Inc
Publication of CN1841735A publication Critical patent/CN1841735A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CNA2005100035317A 2004-12-29 2005-12-29 包含像素的有机电子设备 Pending CN1841735A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/025,755 2004-12-29
US11/025,755 US20060138403A1 (en) 2004-12-29 2004-12-29 Organic electronic devices including pixels

Publications (1)

Publication Number Publication Date
CN1841735A true CN1841735A (zh) 2006-10-04

Family

ID=36610344

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005100035317A Pending CN1841735A (zh) 2004-12-29 2005-12-29 包含像素的有机电子设备

Country Status (5)

Country Link
US (1) US20060138403A1 (https=)
JP (1) JP2006189851A (https=)
KR (1) KR20060076236A (https=)
CN (1) CN1841735A (https=)
TW (1) TW200629619A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646683A (zh) * 2012-02-02 2012-08-22 京东方科技集团股份有限公司 一种阵列基板及其制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060104092A (ko) * 2005-03-29 2006-10-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
GB2437768A (en) * 2006-05-03 2007-11-07 Seiko Epson Corp Photosensing TFT
TWI307553B (en) * 2006-09-22 2009-03-11 Richtek Technology Corp Depletion mode transistor as start-up control element
GB0722750D0 (en) * 2007-11-20 2008-01-02 Cambridge Display Technology O Organic thin film transistors active matrix organic optical devices and emthods of making the same
JP5363009B2 (ja) * 2008-02-29 2013-12-11 株式会社ジャパンディスプレイ 表示装置およびその製造方法
KR101672344B1 (ko) * 2010-05-20 2016-11-04 삼성전자주식회사 광센싱 회로, 상기 광센싱 회로의 구동 방법, 및 상기 광센싱 회로를 채용한 광센싱 장치
KR101765100B1 (ko) * 2010-11-26 2017-08-07 엘지디스플레이 주식회사 박막 트랜지스터 기판과 그 제조방법 및 그를 이용한 액정표시장치
US9059123B2 (en) 2013-07-24 2015-06-16 International Business Machines Corporation Active matrix using hybrid integrated circuit and bipolar transistor
TWI790911B (zh) * 2014-07-03 2023-01-21 晶元光電股份有限公司 光電元件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3520396B2 (ja) * 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
TW521303B (en) * 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
JP3511602B2 (ja) * 2000-09-29 2004-03-29 日本特殊陶業株式会社 スパークプラグ
US6825496B2 (en) * 2001-01-17 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
CA2438581C (en) * 2001-02-16 2005-11-29 Ignis Innovation Inc. Organic light emitting diode display having shield electrodes
JP2003043994A (ja) * 2001-07-27 2003-02-14 Canon Inc アクティブマトリックス型ディスプレイ
KR20030017748A (ko) * 2001-08-22 2003-03-04 한국전자통신연구원 유기물 전계 효과 트랜지스터와 유기물 발광 다이오드가일체화된 유기물 전기 발광 소자 및 그 제조 방법
KR100461467B1 (ko) * 2002-03-13 2004-12-13 엘지.필립스 엘시디 주식회사 능동행렬 유기전기발광소자
JP3989763B2 (ja) * 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP2003332041A (ja) * 2002-05-15 2003-11-21 Seiko Epson Corp 電気光学装置及び電子機器
US6933529B2 (en) * 2002-07-11 2005-08-23 Lg. Philips Lcd Co., Ltd. Active matrix type organic light emitting diode device and thin film transistor thereof
JP2004077567A (ja) * 2002-08-09 2004-03-11 Semiconductor Energy Lab Co Ltd 表示装置及びその駆動方法
JP4000515B2 (ja) * 2002-10-07 2007-10-31 セイコーエプソン株式会社 電気光学装置、マトリクス基板、及び電子機器
KR100904523B1 (ko) * 2002-12-26 2009-06-25 엘지디스플레이 주식회사 액티브 매트릭스형 유기전계발광 소자용 박막트랜지스터
US20040256978A1 (en) * 2003-05-27 2004-12-23 Gang Yu Array comprising organic electronic devices with a black lattice and process for forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646683A (zh) * 2012-02-02 2012-08-22 京东方科技集团股份有限公司 一种阵列基板及其制造方法

Also Published As

Publication number Publication date
KR20060076236A (ko) 2006-07-04
TW200629619A (en) 2006-08-16
JP2006189851A (ja) 2006-07-20
US20060138403A1 (en) 2006-06-29

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20061004