CN1819142B - Cmos图像传感器的制造方法 - Google Patents
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Abstract
在一种制造CMOS图像传感器的方法中，在焊盘上用氮化硅层形成微透镜，使得能够降低微透镜的高度，并能够提高折射率。除了外形为弯曲表面的主透镜，还通过以高蚀刻选择比蚀刻氧化硅层和氮化硅层，形成了侧壁隔离物型状的内部透镜。
Description
相关申请的交叉引用
本申请要求于2004年12月30日提交的第10-2004-0116414号韩国专利申请的优先权，其全部内容结合于此以供参考。
技术领域
本发明涉及一种CMOS图像传感器制造方法。
背景技术
参照图1A和图1B，示出了一种CMOS图像传感器，金属线1a形成于子层1上，然后进行蚀刻处理以形成焊盘(pad)开口。随后，在子层1上形成焊盘层2，然后在焊盘层2上形成滤色镜阵列3。然后，在滤色镜阵列3上形成平面层4，然后形成微透镜6。
微透镜6通过利用了形成于平面层4上的光刻胶5的回流过程而形成。然而，如图1A所示所敞开的焊盘铝部分2a，在进行光学处理时可能会被污染。这样，被污染的部分成为了粒子源。
在制造CMOS图像传感器时，最后的处理步骤关系到形成滤色镜阵列和微透镜的过程。如以上所说明的，微透镜通过使用光刻胶的回流法而形成。
然而，该回流法难以形成弯曲表面。随着微透镜的尺寸减小，微透镜的半径也减小。因此，微透镜的高度必须降低，这使得使用光刻胶的回流法难以进行。
发明内容
因此，本发明旨在提出一种制造CMOS图像传感器的方法，其能够很好地解决由于相关技术的限制和不足而导致的一个或多个问题。
本发明可包括一种制造CMOS图像传感器的方法，它改善了微透镜的整合。
本发明还可包括一种制造CMOS图像传感器的方法，它提高了形成微透镜过程中的精确性。
本发明的其它优点、目的、和特征将在随后的说明中部分地阐述，并且，对于本领域技术人员而言，部分地从随后的分析中变得显而易见。本发明的这些目的和其它优点可通过在所写的说明书、权利要求书、以及附图中所特别指出的结构来实现和获得。
为了获得根据本发明的这些目的和其他优点，如已具体和概括说明的，一种用于制造CMOS图像传感器的方法包括：形成金属线图样；在所述金属线图样上形成焊盘层；在所述焊盘层上形成钝化层；用光刻胶掩模蚀刻所述钝化层，用于微透镜的形成；在用于微透镜的形成的所蚀刻的钝化层上顺序地形成所述氧化硅层和所述氮化硅层；以及，通过以高蚀刻选择比蚀刻所述氧化硅层和所述氮化硅层，在所蚀刻的钝化层的表面中和在所蚀刻的钝化层的内侧壁上形成双重结构的微透镜。
微透镜可在金属线上形成，这样，能够将光会聚而没有光散射现象。因此，侧壁隔离物光刻胶的内部微透镜可以在金属线的任何部分形成。
除了微透镜，还在硅氮化物层的内侧壁上形成内部微透镜。氧化物层和氮化物层都用于微透镜，从而提高了折射率。
通过氧化硅层与氮化硅层的高蚀刻选择比，可形成内部微透镜和主透镜，其中，主透镜形成弯曲表面，内部透镜形成隔离物状。
应该理解，以上对于本发明的一般性描述和以下的详细描述都是示例性的和说明性质的，目的在于对要求保护的本发明提供进一步的说明。
附图说明
附图有助于进一步理解本发明，示出了本发明的实施例，与说明书一起用于解释本发明。附图中：
图1A和图1B是剖视图，示出了一种根据相关技术制造CMOS图像传感器的方法；
图2A-2D是剖视图，示出了一种根据本发明制造CMOS图像传感器的方法；以及
图3是曲线图，示出了CMOS图像传感器的消除光散射现象的情况。
具体实施方式
以下将参照本发明的典型实施例，其实例在附图中示出。尽可能地，在所有附图中使用相同的参考标号表示相同或相似的部件。
图2A-2D示出了根据本发明制造CMOS图像传感器的程序。
如图2A所示，在焊盘层10上形成氮化硅层11，其中，氮化硅层11起到钝化层的作用。然后，通过形成图样在钝化层上设置光刻胶掩模12。
如图2B所示，通过光刻胶掩模12蚀刻氮化硅层11的暴露部分，从而实现氮化硅层的期望图样11a。
如图2C所示，在去除光刻胶掩模12后，在期望图样的所保留的氮化硅层11a上顺序地形成氧化硅层13和氮化硅层14。可选地，层14可以是氮化物层，而不是氮化硅层。在进行对氧化硅层13和氮化硅层14的蚀刻处理过程中，微透镜形成预定形状。以氧化硅层13与氮化硅层14的一般的蚀刻选择比(例如，SiN∶SiO2＝1∶1)，是难以形成微透镜的。
除了这些微透镜，还在氮化硅层11a的内侧壁上形成了内部微透镜。
为了在氮化硅层图样11a中的两个内侧壁上形成内部微透镜的氧化物层隔离物，必须实现氧化硅层13与氮化硅层14的高蚀刻选择比。要形成内部微透镜，必须是能实现氧化硅层13与氮化硅层14的高蚀刻选择比的最佳处理条件。如果根据相关技术处理条件使用CF4和Ar混合气，则很难获得期望的高蚀刻选择比。
本发明能够使用HBr、Cl2、以及O2气体以获得高蚀刻选择比。在一个实施例中，高蚀刻选择比是在如下的条件下实现的：HBr蚀刻剂流量为20-50sccm，Cl2蚀刻剂流量为100-200sccm，SF6蚀刻剂流量为10-20sccm；RF功率为200-500W；压力为100-200毫托(mTorr)。在这些条件下，当蚀刻氧化硅层13和氮化硅层14时，可获得期望的氮化硅层14与氧化硅层13的高蚀刻选择比，例如高于20∶1。
如图2D所示，在钝化层11a的表面上形成微透镜15a，其中，每一个微透镜15a都形成曲面状.另外，在钝化层11a图样内部的两个内侧壁上形成内部微透镜15b，其中，内部微透镜15b形成侧壁隔离物.在焊盘层10下形成子层16，然后，在子层上形成具有开口区17b的金属线17a.在形成焊盘层10之后，在焊盘层10的下侧对应于开口区17b的位置形成铝焊盘部分10a.
图3示出了根据本发明的CMOS图像传感器的一个典型实施例的特性，其中，微透镜形成于金属线上。如图3所示，光被会聚而没有光散射现象。因此，侧壁隔离物光刻胶13a的内部微透镜可在金属线的任何部分形成。
如上所述，根据本发明制造CMOS图像传感器的方法，通过利用双重透镜结构，能够减小微透镜的半径，并且改善了微透镜的整合。此外，由于降低了微透镜的总高度，微透镜的精确性也得以提高。而且，由于微透镜用氧化物层和氮化物层形成，微透镜的半径可根据需要进行设置。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (6)
1.一种用于制造CMOS图像传感器的方法，包括：
形成金属线图样；
在所述金属线图样上形成焊盘层；
在所述焊盘层上形成钝化层；
用光刻胶掩模蚀刻所述钝化层，用于微透镜的形成；
在所蚀刻的所述钝化层上顺序地形成氧化硅层和氮化硅层；以及
通过以氮化硅层与氧化硅层的高于20∶1的高蚀刻选择比蚀刻所述氧化硅层和所述氮化硅层，在所蚀刻的钝化层的表面中和在所蚀刻的钝化层的内侧壁上形成双重结构的微透镜。
2.根据权利要求1所述的方法，其中，所述钝化层由氮化硅形成。
3.根据权利要求1所述的方法，其中，用于所述氧化硅层和所述氮化硅层的形成的蚀刻气体由HBr和Cl2和O2构成。
4.根据权利要求1所述的方法，其中，对所述氧化硅层和所述氮化硅层的蚀刻步骤是在如下条件下进行的：HBr蚀刻剂流量为20-50sccm，Cl2蚀刻剂流量为100-200sccm，SF6蚀刻剂流量为10-20sccm；RF功率为200-500W；以及压力为100-200毫托。
5.根据权利要求1所述的方法，还包括：
在所述焊盘层下形成子层；
在所述子层上形成具有开口区的金属线；以及
在所述焊盘层的下侧对应于所述开口区的位置形成铝焊盘部分。
6.一种根据权利要求1所述的方法所形成的CMOS图像传感器。
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| KR1020040116414A KR100649006B1 (ko) | 2004-12-30 | 2004-12-30 | 시모스 이미지 센서의 제조방법 |
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| KR100868653B1 (ko) * | 2007-05-03 | 2008-11-12 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
| KR20100028371A (ko) * | 2008-09-04 | 2010-03-12 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
| CN105399041A (zh) * | 2015-10-19 | 2016-03-16 | 苏州工业园区纳米产业技术研究院有限公司 | 传感器的微凸状氧化层结构及其制造方法 |
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| US6171883B1 (en) * | 1999-02-18 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof |
| KR20010004114A (ko) | 1999-06-28 | 2001-01-15 | 김영환 | 이미지센서의 마이크로렌즈 및 그 형성방법 |
| US6307243B1 (en) * | 1999-07-19 | 2001-10-23 | Micron Technology, Inc. | Microlens array with improved fill factor |
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| US7078260B2 (en) * | 2003-12-31 | 2006-07-18 | Dongbu Electronics Co., Ltd. | CMOS image sensors and methods for fabricating the same |
| US7443005B2 (en) * | 2004-06-10 | 2008-10-28 | Tiawan Semiconductor Manufacturing Co., Ltd. | Lens structures suitable for use in image sensors and method for making the same |
| KR100672661B1 (ko) * | 2004-12-28 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서의 제조방법 |
| KR101008320B1 (ko) | 2005-12-27 | 2011-01-13 | 혼다 기켄 고교 가부시키가이샤 | 차량 제어 장치 |
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2004
- 2004-12-30 KR KR1020040116414A patent/KR100649006B1/ko not_active IP Right Cessation
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2005
- 2005-12-28 CN CN2005100974870A patent/CN1819142B/zh not_active Expired - Fee Related
- 2005-12-29 US US11/320,482 patent/US7294523B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1460874A (zh) * | 2002-05-13 | 2003-12-10 | 罗姆股份有限公司 | 图像传感器组件及其制造方法 |
| CN1518119A (zh) * | 2003-01-16 | 2004-08-04 | ���ǵ�����ʽ���� | 互补金属氧化物半导体图像传感器件的结构及其制造方法 |
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| KR20060077524A (ko) | 2006-07-05 |
| US20060148160A1 (en) | 2006-07-06 |
| US7294523B2 (en) | 2007-11-13 |
| CN1819142A (zh) | 2006-08-16 |
| KR100649006B1 (ko) | 2006-11-27 |
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