CN1813328A - Micro-electromechanical device and module and method of manufacturing same - Google Patents
Micro-electromechanical device and module and method of manufacturing same Download PDFInfo
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- CN1813328A CN1813328A CN 200480018001 CN200480018001A CN1813328A CN 1813328 A CN1813328 A CN 1813328A CN 200480018001 CN200480018001 CN 200480018001 CN 200480018001 A CN200480018001 A CN 200480018001A CN 1813328 A CN1813328 A CN 1813328A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/38—Multiple capacitors, e.g. ganged
Abstract
The MEMS element of the invention has a first, a second and an intermediate third electrode. It is given an increased dynamic range in that the switchable capacitor constituted by the second and the third electrode is provided in the signal path between input and output, and that the switchable capacitor constituted by the first and third electrode is provided between the signal path and ground. The MEMS element of the invention is very suitable for integration in a network of passive components.
Description
The present invention relates to a kind of electronic installation, it comprises MEMS (micro electro mechanical system) (MEMS) element, the intermediate beam that described element has first and second electrodes and has the first and second relative conduction sides, first side is in the face of first electrode, second side is in the face of second electrode, by applying driving voltage, described beam moves between first and second electrodes.
The invention still further relates to the module that comprises this device.
This electronic installation for example can be learnt from WO-A 00/52722.Known devices is the MEMS element, and wherein electrode and beam are arranged on the plane that is roughly parallel to substrate.Intermediate beam is laminated product herein, and it is included in first insulating barrier, cantilever beam and second insulating barrier between two conduction surfaces.The side is used as control surface, is provided for the ability of the individual drive function of top and bottom switch structure.This allows pushing away with pulling process so that raising speed of while.By two conduction surfaces are placed on common earth potential place, the electrostatic shielding between the cantilever beam place signal code and provide the control signal of Coulomb force to be provided.Thereby when comparing with simpler cantilever beam structure, this structure provides the Signal Spacing of enhancing.
The defective of known electronic is that it lacks enough dynamic ranges in the application in RF field.
Thereby first purpose of the present invention provides a kind of the sort of electronic installation of mentioning in opening paragraph, and it has improved dynamic range.
According to a first aspect of the invention, a kind of electronic installation is provided, it comprises microcomputer electric component (MEMS) device, the intermediate beam that this element comprises first and second electrodes and has the first and second relative conduction sides, first side is in the face of first electrode, second side is in the face of second electrode, by between described first and second electrodes, applying driving voltage, described beam is removable, it is characterized in that: the second conduction side of second electrode and beam forms first switchable capacitors that has intermediate dielectric, it connects the signal path between the input and output, and first side of first electrode and beam forms second switchable capacitors that has intermediate dielectric, and it is connected to ground from signal path.
Find to have the MEMS element of this connection surprisingly, one of them capacitor is arranged in signal path, and another capacitor is connected with ground, and this provides improved dynamic range.This connection is actually conventional MEMS capacitor and does not have the parallel connection of switch of any intermediate beam and the combination of cascaded structure.Under given insertion loss, cause significantly higher isolation with its element more of the present invention.Although the isolation of conventional RF MEMS capacitive switch demonstration-20dB when the insertion loss of-0.1dB, the isolation of element of the present invention demonstration-32dB when same insertion loss.And this improvement performance is to realize under the situation that does not increase overall device dimensions.
In first embodiment, beam embodies as the 3rd capacitor.Thereby compared with prior art beam has used more simple structure.This first advantage that has is that it has lower rigidity, thereby allows low-down actuation voltage, is preferably lower than the cell voltage of several volts.Second advantage that it has is to have improved manufacturability.In fact, the element of this embodiment can be realized in thin-film technique.
In another embodiment, the surface area of second electrode is less than the surface area of first electrode.Therefore can adjust switch performance, realize even higher isolation.There is several different methods to change the surface area of second electrode; It can be less than the third electrode and first electrode; It can only have limited overlapping with third electrode.But preferably second electrode is subdivided into independent section.This section permission third electrode falls within the border of second electrode.This allows the good design of surface area ratio between first and second electrodes.This benefit that has is to reduce the adhesion problems of the third electrode and second electrode.Can be reduced effectively if wish it, use flowing of air, perhaps use the space between the another kind of material filled section, described material can not show any sucking action with the third electrode material.Adopt this embodiment, isolation can be brought up to-38dB.The effect of section is sizable as a whole; Because the capacitor that is connected with ground has increased by four times (with respect to series capacitors), so dynamic range has increased ten times.
For this structure optimization be that the MEMS element is a horizontal type, for example first and second electrodes appear in the plane of almost parallel and substrate.The term almost parallel should be able to be found out during with the comparison of vertical-type MEMS element, for example uses in accelerometer.
Further preferably second electrode appears on the substrate surface, because if it appears on the substrate, will be easy to second electrode is subdivided into independent section.
Even more preferably first electrode is included in the layer with elastic constant, and described elastic constant is basically greater than the elastic constant of beam.First electrode is configured to bridge shape form usually.For stable work, should ignore with the mobile phase ratio of beam by the moving of bridge of driving voltage induction.In addition, if the rigidity of bridge is not enough, when moving up or down, beam has the risk of this first electrode resonance behavior.This does not wish to take place.The rigidity that increases the layer of first electrode can address this problem.Increase the rigidity of this layer by the thickness that increases layer, 1-10 micron order for example perhaps has high stiffness by use but also has the material of excellent conductive performance.Its example is the alloy of Al and Ti or the alloy of Al and Cu, preferably contains the alloying element of 1-5%.
Further preferably first electrode is connected with ground, because it has the thickness of increase.The thickness that increases causes higher conductivity, thereby ground also has real earth potential.
The situation that these faces are coated with the thin layer isolated material do not got rid of in term " conduction side ".In fact, if Al then can form native oxide Al as third electrode
2O
3This is preferred especially in following situation: first and second electrodes not only play the effect of single electrode, but also play the effect of activation electrodes.Same third electrode also can be given this two kinds of functions.Dielectric is then used in protection, to prevent short circuit.
First and second switchable capacitors both can be used as capacitor, also can be used as switch.If wish the capacitive character behavior towards ground, then dielectric layer appears at the top of second electrode.Suitable dielectric for example is silicon nitride, tantalum oxide etc.
The invention still further relates to electronic installation, it comprises MEMS (micro electro mechanical system) (MEMS) element that is arranged on the substrate, it comprises first and second electrodes, and described electrode is arranged in the plane that is roughly parallel to substrate, and intermediate beam is arranged between described first and second electrodes, described intermediate beam has first and second and conducts the side relatively, first side is in the face of first electrode, and second side is in the face of second electrode, by apply driving voltage between described first and second electrodes, described beam is removable
Second purpose of the present invention provides this electronic installation, and it is made easily, and better Electronic Performance can be provided.
This purpose is implemented, because the first and second relative conduction sides are the parts as the same conductive layer of third electrode.Therefore, can use thin-film technique to make three metal levels.The easier control of this thin-film technique.
An advantage of the present invention is that this MEMS element with three electrodes has the good electron performance, if especially connect in the mode of further demonstration.Third electrode is placed as and can contacts with first electrode, can contact with second electrode again.If be connected with first electrode, then electrically contact quite well, cause low-down separation loss.If be connected with second electrode, then separation loss is quite high, can be up to-40dB.
The attribute of element can be optimized during as capacitor, transducer or switch.If plan as variable capacitor, then first and second electrodes can be selected different shapes, so as first and third electrode between have be different from second and third electrode between another capacity area.
If plan as switch, the then overlapping reduction between the electrode is so that place the adhesion behavior.Equally, the contact area at the first and second electrode places does not need to be chosen in same position; Just, when with first electrode on second metal layer of electrodes when outstanding, between first and second electrodes without any need for overlapping.This can realize by the abundant design of electrode.This area that reduces allows the bigger degree of freedom of electrode design, thereby RF attribute that can optimization means.The parasitic capacitance of substrate reduces, and chosen position so that cross tie part have the strip line feature, and it connects ground level or ground cross tie part (for example as transmission line or coaxial construction).
The realization that can be used as selection of the electrode pattern design of wishing is that superficial layer is arranged on one or two electrode, and it comprises the window that is used to make contact.Use one or two this superficial layer can reduce any adhesion behavior, because the interface between the electrode is not fully flat.This can not impair and electrically contact, and does not have some spaces that are used to compromise because there is the result of this superficial layer to show.The use of superficial layer is particularly suitable for second electrode.If the MEMS element is incorporated in the passive network that has capacitor, the patterned dielectric layer of relatively little thickness always appears on the metal level, and second electric limit fixes in this metal level.For its abundant layout is no problem, thereby the exposed area of second electrode is less than the exposed area of third electrode.
In a further embodiment, the MEMS element is provided with the spring-like element in its structure.This spring-like structures is known in MEMS element field in essence.Basically, bridge shape or membrane structure as first electrode, are connected with substrate by some beams in the present invention, and described beam side direction appears in this structure.These beams have big elasticity, thereby can vibrate.Thereby they are equal to spring.Beam has the design of hope, for example comprises angle.
This structure especially has advantage when of the present invention, and it allows moving of first electrode.This further extends capacitance range.In addition, it allows to switch between three or more states: complete closure state, and three promptly all electrodes are connected to each other; The first semi-open state, promptly third electrode connects first electrode; The second semi-open state, promptly third electrode connects second electrode; Also have the complete opening state, promptly third electrode does not connect first or second electrode.For this last state, preferably third electrode is also by the support structure that comprises spring.Its another advantage is can obtain for example power up to 6.75 times under the same driving voltage, so that resist any stiction force.The reliability of this modifying device.
In suitable embodiment, second electrode is roughly elasticity.This allow second electrode roll around.This means that part second electrode can be in the position that connects first electrode, part second electrode can be in very the position near second electrode.The elastic behavior of second electrode can be realized by the thickness of selecting the material and second electrode.For example the thin metal layer of gold, silver, copper and aluminium has enough elasticity.Make it become alloy can further to adjust elasticity, for example comprise the copper of about 0.5-2% in the aluminium by adding suitable element.This alloy demonstrates and the similar hardness of fine aluminium, but has the creep that roughly reduces.
This embodiment is suitable especially, if at least one in third electrode and other electrode forms capacitor.Advantage is that capacitor has continuously adjustable setting range, and described scope is extended considerably, compares with the variable capacitor that only has first and second electrodes in the time of especially.
By the change electrode area, and/or, realize the electric capacity adjustment by on the surface of first electrode and second electrode, using different dielectrics.
Thereby first realization is that the electric medium constant of the dielectric layer on first and second electrode surfaces is different.The following fact is possible: use the layer with high relatively electric medium constant on a surface, silicon nitride for example, tantalum oxide, perhaps even perovskite ceramics, plumbous zirconate titanate etc. for example, on another surface, use simultaneously layer, benzocyclobutene (benzocyclobutene) for example, organically-modified middle lyriform pore silicon or analog with low-dielectric constant.
Second realization is that first and second electrodes have different shapes.This shape can be that electrode is designed pattern so that only occur in the part.Because the common bridge construction of first electrode, this relates generally to the shape of second bottom electrode.It can further be subdivided into many sections.Be divided into triangular sections and seem especially suitable.This allows the continuous variation of electrode area, and the section of causing is connected to each other in this electrode interior simultaneously.
It is most preferred that the layer that first electrode occurs wherein has enough mechanical strengths, so that have bridge-like structure, have enough conductivity simultaneously, so that in RF uses, be used as cross tie part.This can realize by fully selecting material.
In a further embodiment, this MEMS element is incorporated in the passive network.Inductor can be limited in the layer, and first electrode also is limited in this layer, and this layer is given bigger thickness and/or another material composition, increases its rigidity so that compare with third electrode.The electrode of film capacitor can with second and third electrode be limited to in one deck.Its dielectric layer even can cover second electrode of MEMS element, if it is used as the adjustable capacitance device especially, rather than switch.The process that make this RF of being applied to field, has a passive integration process of good capacitors, good electrical sensor and good interconnects can learn that it incorporates reference into from US6538874 herein.
Aforesaid realization and embodiment also are suitable for herein.
The substrate of this MEMS process is preferably insulation or semi-insulating.The example of this substrate comprises GaAs, glass, aluminium oxide and has or do not have the pottery of inner conductor.Select pottery can optimize the thermal expansion behavior.But preferably use high ohm silicon as substrate.Can use polysilicon and high ohm monocrystalline silicon, make high ohm by the ion of implanting He for example or Ar.Silicon substrate with amorphous top layer is another suitable selection.
Electronic installation of the present invention is highly suitable in the impedance matching and uses.Particularly preferably be the application of the impedance matching network that is used for mobile phone antenna, wherein duplexer is used for switching between reception and transmission path, has comprised the bandwidth between the different frequency.But impedance matching also is suitable for other position, for example power amplifier, transceiver.
Obtainable prior art is not instructed the present invention.
EP1093142 and WO00/52722 have shown structure, and wherein target is the laminate of several layers.It can not realize simple manufacturing on commercial scale.
US2002/0153236 shows to have the structure (Figure 20) of target, but this is a vertical-type MEMS structure (being used for transducer), is not horizontal structure.
US6310526 describes the structure with the moving principle of mangneto.MEMS is input and two switches of exporting between the microstrip herein.One-tenth-value thickness 1/10 be given as be used for microstrip (0.5-10um) but this only depends on the microstrip behavior.Do not provide any hint and connect ground, and switch is used as capacitor yet, do not show the manufacturing of shown device yet one in two outputs.
US2003/0048036 shows the MEMS structure, and it is worked on the basis of comb shape-finger sensor-actuator.This patent is at first discussed the electrostatic MEMS structure of using among the present invention, clearly the difference of statement and comb shape-finger sensor/actuator.
With reference to the embodiment that after this describes, these and other aspect of the present invention will become clear, and be illustrated.
With reference now to accompanying drawing, also only embodiments of the invention are described by example, wherein:
Figure 1A is the schematic cross-sectional view of changeable MEM capacitor;
Figure 1B shows schematic circuit, and its device of setting forth Figure 1A can be used for parallel connection or cascaded structure;
Fig. 2 is a bistable state MEMS element schematic cross-sectional view according to an exemplary embodiment of the present invention;
Fig. 3 shows schematic circuit, and it sets forth the operating structure of the device of Fig. 2;
Fig. 4 sets forth with respect to device of the prior art with chart, causes significantly higher isolation (isolation) for the device of given insertion loss Fig. 2;
Fig. 5 is the schematic cross-sectional view of the MEMS element of another exemplary embodiment according to the present invention;
Fig. 6 schematically sets forth the manufacturing process that is used to realize Fig. 2 device;
Fig. 7 summary shows the viewgraph of cross-section of second embodiment of apparatus of the present invention;
Fig. 8 summary shows the viewgraph of cross-section of the 3rd embodiment of apparatus of the present invention;
The top view of the 3rd embodiment shown in Fig. 9 summary displayed map 8.
Same components in the different accompanying drawings is represented with identical Reference numeral.Accompanying drawing is schematically pure.
With reference to Figure 1A, conventional changeable MEM capacitor 10 comprises the main body 12 that is installed on the substrate 14, has recess 16 between main body 12 and substrate 14.First electrode 30 is limited in the main body 12.Second fixed electrode 20 is arranged on the top of substrate 14.In the use, by apply the DC driving voltage between first and second electrodes 30,20, stand alone type (free-standing) first electrode 30 is moved to contact bottom electrode 20 downwards.Under its extreme case, the surface 18 of first electrode 30 can contact second electrode 20.Shown in Figure 1B, MEM device 10 can be worked in parallel connection or cascaded structure.
In principle, the capacitive character mems switch, for example above-described the sort of, comparing with their the relative thing of semiconductor (for example p-I-n diode and field-effect transistor) provides high isolation and low insertion loss.As mentioned above, these conventional MEMS (capacitive character, with electrically contact opposite) switch can be used in parallel connection or the cascaded structure.But in fact, the dynamic range of this capacitive switch is subjected to the restriction of capacitance density, can obtain capacitance density when apex electrode is moved to contact bottom electrode 20 downwards.Especially, the surface roughness of contact electrode causes capacitance density low relatively when switch closure.For example, the spraying plating aluminium lamination that 500nm is thick has Ra ~ 10nm surface roughness.This causes having residual air gap between the electrode of about 30nm when they are pulled together.In fact, when free-standing electrode was moved to contact bottom electrode 20 downwards, effective air gap caused 300pF/mm
2Capacitance density.For the typical devices layout, this causes being used for-the 0.1dB insertion loss only-20dB isolates.Can increase dynamic range by the size (just by increasing electrode area and top and bottom gaps between electrodes) that increases switch 10.But in fact, this causes unacceptable bigger device (just some mm
2Electrode area and gap＞10um).
With reference now to Fig. 2,, MEM switchable capacitors 10 comprises the main body 12 that is installed on the substrate 14 according to an exemplary embodiment of the present invention, has recess 16 between main body 12 and substrate 14.First electrode 30 is limited in the main body 12.Second electrode 20 appears on the substrate 14.Device also is included in the intermediate beam 220 between first and second electrodes, and it comprises free-standing film, the almost parallel and first and second electrodes, and intermediate beam 220 forms the third electrode of element.In other words, device comprises 3 electrodes 30,20,220, and wherein two are suspended on the substrate 14.In the use, to contact top fixed electrode 30 or bottom fixed electrode 20, carry out change action by pulling target 220.This pulling is made to apply dc voltage and is set up between one in traveling electrode 220 and fixed electrode 30,20.
In device shown in Figure 2, each electrode 30,20,220 all is coated with dielectric layer 240, so that avoid short circuit when intermediate beam 220 is drawn to one that contacts in the fixed electrode 30,20.Appear at the dielectric layer Al particularly on the third electrode 220
2O
3Native oxide, or any other insulating surface layer.First conducting surface 260 of first electrode 30 and beam 220 forms the first switchable capacitors C1 that has intermediate dielectric, and it connects the signal path between the input and output.Similarly, the second conduction side 280 of second electrode 20 and beam 220 forms the second switchable capacitors C2 that has intermediate dielectric, and it is connected to ground from signal path.Take this mode, realized circuit shown in Figure 3.The device layout that can see Fig. 2 will be incorporated in the signalling with reference to the parallel connection and the cascaded structure of Figure 1A and 1B description and elaboration.
Therefore, enlarged and installed 100 dynamic range, switch size has not been made compromise simultaneously.The device layout also causes lower switched voltage and switching time faster.The bistable device layout of Fig. 2 is compared the improvement performance that has and is set forth in accompanying drawing 4 with the form of chart with (routine) single serial or parallel connection switch (described with reference to figure 1).Can see according to bistable switch of the present invention,, under given insertion loss, cause significantly higher isolation as only with reference to the accompanying drawings shown in 2 the example.For example series connection and paralleling switch have under the insertion loss of-0.1dB-isolation of 20dB.But the bistable switch of Fig. 2 has under the insertion loss of-0.1dB-isolation of 32dB.Also can see the performance that has realized this enhancing, not increase the overall dimensions of device simultaneously with reference to prior-art devices.
Can further optimize switch performance by the ratio that changes bottom and top electrode area.For example, when the insertion loss of permission-0.1dB, adjust the ratio of bottom and top electrode area, so that the realization maximum isolation.This causes further increasing isolating, in this case can be up to-38dB, shown in the chart of Fig. 4.Should note by satisfying C
1=2C
2Realize these results, these data are to calculate under 2.4um, the 900MHz frequency (GSM frequency range) in the gap between top and the bottom electrode.Can recognize that then electrode length is equal to the square root of electrode area if be assumed to square electrode.
With reference to the accompanying drawings 5, a kind of method that changes electrode area is, for example, and with bottom electrode 20 segmentations.But, realizing that other method of equifinality also is conceivable, the present invention does not plan limitation in this.
Because switch of the present invention is a bistable state, so intermediate beam 220 is designed to have low relatively rigidity, it is not the sort of situation that is used for ordinary tap, because under the sort of situation, traveling electrode requires the oneself to support when switch is in opening.Because the rigidity of target can be lower under situation of the present invention, so this allows low-down actuation voltage (being preferably lower than the cell voltage that has only several volts).In addition, bistable switch of the present invention causes the raising of switch speed.For ordinary tap, the speed that traveling electrode discharges from contact electrode only depends on the Elastic Contact of traveling electrode.Thereby very fast relatively if the switch speed of ordinary tap requires, then traveling electrode must have high relatively rigidity, and this follows demanding actuation voltage.But, under bistable switch situation of the present invention, by between target 220 and electrode of opposite 20,30, applying voltage, increase target 220 from the speed that contact electrode 20,30 separates, therefore do not need traveling electrode to have higher elastic constant.
Usually, comprise that in manufacturing at first one or more sacrificial release layers 300 are provided in the process of electronic installation of MEMS element, and by abundant layout.Then by (such as the 400 degrees centigrade) sputter under the elevated temperature or the PVD deposit of aluminium lamination, top layer 12 is provided.This top layer 12 is compared relative thicker with the common thickness of film, usually the 1-10 micron.This layer comprises any structure and the supporting construction (still, can recognize and can imagine some different structures in this that the present invention does not plan limitation in this) of interconnecting with substrate 14.
Next, top layer 12 uses photoetching process and etching method to be configured, and for example, the wet chemistry corrosion is so that limit first electrode 30.Then releasing layer 300 is for example further removing in the steps of chemical attack, so that make first electrode 30 and third electrode 220 freely found (free-standing).And then, the 10 sealed encapsulation of MEMS element are because moisture and analog trend towards that the function of device is had adverse effect.This encapsulation realizes that by welding ring its implementation is as follows usually: scolder at first is provided, makes device pass through reflow ovens and reflux solder down at about 250-300 degree centigrade subsequently.
With reference to the accompanying drawings 6, the method for shop drawings 2 devices will briefly be described now.Substrate 14 is provided with thermal oxide layer 142 at the top of high ohmic silicon substrate 141.First aluminium lamination is set, the about 0.3um of thickness on it.This layer is configured by photoetching process according to the pattern of hope.This causes second electrode 20, and it is in this example by segmentation.First sacrifice layer 300 of silicon nitride is disposed thereon, and thickness also is about 0.5um.At the top of this first sacrifice layer 300, second metal level is according to the pattern setting of hope.Pattern comprises third electrode 220.Another sacrifice layer 301 is employed in the above, also is silicon nitride, and it uses the PECVD deposition.This layer 301 has for example 1um of thickness.If wish that another separator 302 (as shown in Figure 7) can be applicable to this layer top.This is specially suitable, if MEMS element and passive network integration, and main body 12 also would be used to limit other assembly.This another separator 302 comprises the material different with first and second sacrifice layers 300,301, silica for example, and organically-modified middle lyriform pore silicon for example can be known from WO-A03/024869, benzocyclobutene, perhaps photosensitive corrosion-resistant material.This another separator 302 is designed pattern, so that it does not exist in the zone of MEMS element.Before or after this layout, second sacrifice layer 301 adopts the reactive ion etching method to be designed pattern according to the pattern of hope.Pattern is created to the window of first and second metal levels.Then the 3rd metal level 12 is provided, and it also will fill window.The Al that this about 1.0-1.5um is thick
.98Cu
.02Metal level is given class girder construction, so that limit first electrode 30.First electrode 30 preferably has bridge construction.After this, another photosensitive layer is employed.It is designed pattern, so that it is created to the window of the chosen position of first and second sacrifice layers 300,301.After this sacrifice layer 300,301 is removed by the use plasma, especially fluorine-based plasma.In this case, the isolation top layer 142 of substrate also comprises the etch stop layer of resisting this plasma, for example Al
2O
3Layer.Notice that it also is possible using the combination of wet chemical process or use wet type and dry chemical corrosion.
As implied above, when middle electrode 220 was pulled to contact in the fixed electrode 30,20, the dielectric layer 240,180 that covers metal level was used to avoid the short circuit between the electrode.Be used to limit under the situation of electrode 30,20,220 at aluminium (Al), natural alumina plays dielectric effect (related is the puncture voltage＞7V of natural alumina, and it is derived from experimental data and obtains).
Fig. 7 shows second embodiment of apparatus of the present invention, and it comprises MEMS element 10, film capacitor 50 and vertical interconnect 60.This figure sets forth favorable characteristics of the present invention, and the MEMS element with three electrodes 30,20,220 can be embedded in the passive network that also comprises other assembly, does not need to use any extra metal level or sacrifice layer.In fact, first sacrifice layer 300 also plays dielectric effect of film capacitor 50.The electrode 51,52 of film capacitor 50 is limited in the metal level identical with second and third electrode of MEMS element 10.The 3rd metal level 12 is not only first electrode 30, but also is cross tie part.Herein particularly importantly, first and second sacrifice layers 300,301 corrode selectively.What be improved together is that not only a hole appears on the main body 12, but a plurality of hole; Supporting construction is roughly extended, and just it is mainly wall-shaped, rather than cylindricality.
Fig. 8 shows the 3rd embodiment of MEMS element with viewgraph of cross-section.Fig. 9 shows the top view of this embodiment, and wherein, first and second and three electrodes 30,20,220 are presented at the top of each other.Herein, third electrode 220 is flexible, this means that its mechanical force can be overcome by applying driving voltage.Second electrode, 20 here designed patterns are so that comprise some triangular sections.Therefore, the surface area of second electrode 20 is different from the surface area of first electrode 30.First and second electrodes 30,20 are provided with the superficial layer 240,180 of dielectric substance in addition, because this example is a variable capacitor.The position of third electrode 220 is results of dynamic balance.These advocate to comprise the internal mechanical power of Van der Waals (Van der Waals) power, electromagnetic force and third electrode 220.Because these electrode 220 relative thin and flexible, its internal mechanical power can be ignored largely.Then the position is defined, and changes by the variation that is applied to the voltage ratio on first and second electrodes 30,20.Be arranged on superficial layer 180,240, especially its surface roughness on first and second electrodes 30,20, will determine the intensity of Van der Waals for strongly, and the resistance of any variation of rest position.Because the triangular sections of second electrode 20, second and third electrode 20,220 between clean electrostatic attraction depend on the plane internal coordinate.In other words, this triangular sections provides embedding trend, and it connects first top electrodes 30 at the place, an end (accompanying drawing left side) of third electrode 220.At the place, the other end of third electrode 220, very big to the power of second electrode 20, still, third electrode 220 will connect second electrode 20.Mechanism is provided simultaneously, and it guarantees that third electrode 220 can not glue post second electrode 20 or first electrode 30 fully.
It should be noted that the foregoing description set forth the present invention, rather than limitation the present invention, those persons skilled in the art can design many embodiment that can be used as selection under the situation that does not break away from the scope of the invention that is limited by the appended claim book.In claims, be placed on any Reference numeral in the bracket and should not be construed as restriction claim.Word " comprises " and similar term is not got rid of generally the element of not listing in each claim or specification or the appearance of step.The singulative of element is not got rid of the plural form of this element, and vice versa.In enumerating the device claim of some parts, a plurality of this parts can by a hardware or same should be with embodiment.This minimum fact of some measure of narration does not represent to use the combination of these measures with the acquisition advantage in the dependent claims that differs from one another.
Claims (21)
1. electronic installation, it comprises MEMS (micro electro mechanical system) (MEMS) element (10), the intermediate beams (220) that this element comprises first electrode (30) and second electrode (20) and has the first and second relative conduction sides, first side (260) is in the face of first electrode (30), second side (280) is in the face of second electrode (20), by apply driving voltage between described first electrode (30) and second electrode (20), described beam (220) is removable, it is characterized in that:
The second conduction side (280) of second electrode (20) and beam (220) forms first switchable capacitors (C1) that has intermediate dielectric, and it connects the signal path between the input and output, and
First side (260) of first electrode (30) and beam (220) forms second switchable capacitors (C2) that has intermediate dielectric, and it is connected to ground from signal path.
2. electronic installation as claimed in claim 1 is characterized in that, beam (220) is as third electrode.
3. electronic installation as claimed in claim 1 or 2 is characterized in that, first electrode (30) has surface area, and it is greater than the surface area of second electrode (20).
4. electronic installation as claimed in claim 3 is characterized in that, second electrode (20) is subdivided into independent section.
5. electronic installation as claimed in claim 1 or 2 is characterized in that, electrode (20,30,220) appears in the plane that is roughly parallel to substrate (14).
6. electronic installation as claimed in claim 5, it is characterized in that, second electrode (20) appears between beam (220) and the substrate (14), and first electrode (30) is included in the layer with elastic constant, and described elastic constant is basically greater than the elastic constant of beam (220).
7. electronic installation as claimed in claim 1 is characterized in that, the conduction side of beam (220) (260,280) are connected with input, and first electrode (30) plays the effect of output.
8. electronic installation as claimed in claim 2 is characterized in that, (260,280) all are provided with electric insulation layer (240) to third electrode (220) in first and second sides.
9. electronic installation, it comprises MEMS (micro electro mechanical system) (MEMS) element (10) that is arranged on the substrate (14), it comprises first electrode (30) and second electrode (20), described electrode (20,30) be arranged in the plane that is roughly parallel to substrate (14), intermediate beam (220) is arranged between described first electrode (30) and second electrode (20), described intermediate beam (220) has first and second and conducts side (260 relatively, 280), first side (260) is in the face of first electrode (30), second side (280) is in the face of second electrode (20), by between described first electrode (30) and second electrode (20), applying driving voltage, described beam (220) is removable, it is characterized in that: first and second conduct side (260 relatively, 280) be a part as the same conductive layer of third electrode (220).
10. electronic installation as claimed in claim 9, it is characterized in that, second electrode (20) appears between third electrode (220) and the substrate (14), and first electrode (30) is included in the layer with elastic constant, and described elastic constant is basically greater than the elastic constant of third electrode (220).
11., it is characterized in that second electrode (20) is provided with surface area as claim 9 or 10 described electronic installations, it is less than the surface area of first electrode (30).
12. electronic installation as claimed in claim 11 is characterized in that, second electrode (20) is subdivided into independent section.
13. as claim 2 or 9 described electronic installations, it is characterized in that, third electrode (220) is roughly elasticity, so that an edge at its first surface area connects second electrode (20), connect first electrode (30) at the opposite edges place of its second surface area, thereby the ratio of first and second surface areas can change when applying actuation voltage.
14., it is characterized in that first electrode (30) is limited in one deck as claim 6 or 10 described electronic installations, also be limited with inductor in this layer.
15., it is characterized in that first electrode (30) and third electrode (220) are limited in the layer as claim 2 or 9 described electronic installations, also be limited with the electrode of film capacitor in the layer.
16., it is characterized in that first electrode (30) is constructed to have the bridge that supports separator on the substrate (14) as claim 6 or 10 described electronic installations.
17. as claim 6 or 10 described electronic installations, it is characterized in that, first electrode (30) is membranaceous or the part of bridge-like structure, it is supported on the substrate (14), some beam side direction connect described structure, the function that it comprises spring-like allows first electrode (30) controllable displacement on the direction that is approximately perpendicular to substrate (14).
18., it is characterized in that MEMS element (10) is the part of impedance matching network as claim 1 or 9 described electronic installations.
19. a front-end module, it is provided with power amplifier and according to each described electronic installation (10) in preceding claim.
20. according to the purposes of each described electronic installation in the claim 1 to 18 in RF uses, wherein, beam (220) is driven voltage and drives towards first electrode (30), perhaps is driven driven away from first electrode (30).
21. one kind drives method according to each described electronic installation in the claim 1 to 18 by applying actuation voltage.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP03101911 | 2003-06-26 | ||
| EP03101911.0 | 2003-06-26 | ||
| EP03104042.1 | 2003-10-31 |
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| CN1813328A true CN1813328A (en) | 2006-08-02 |
| CN100521030C CN100521030C (en) | 2009-07-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200480018001 Active CN100521030C (en) | 2003-06-26 | 2004-06-23 | Micro-electromechanical device and module and method of manufacturing same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100434882C (en) * | 2007-11-20 | 2008-11-19 | 东南大学 | Static excitation resonator capacitor vibration pick-up structure |
| CN102543572A (en) * | 2010-12-31 | 2012-07-04 | 上海丽恒光微电子科技有限公司 | Micro electro mechanical system (MEMS) switch apparatus, logic gate and integrated circuit |
| CN103779142A (en) * | 2010-12-31 | 2014-05-07 | 上海丽恒光微电子科技有限公司 | Logical gate |
| CN108886330A (en) * | 2016-03-17 | 2018-11-23 | 西铁城时计株式会社 | Electrostatic electromechanical transducer |
| CN110853985A (en) * | 2019-11-01 | 2020-02-28 | 北京邮电大学 | Parallel type capacitance switch |
| TWI704101B (en) * | 2019-03-29 | 2020-09-11 | 財團法人工業技術研究院 | Adjustable sensing capacitance microelectromechanical system (mems) apparatus |
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2004
- 2004-06-23 CN CN 200480018001 patent/CN100521030C/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100434882C (en) * | 2007-11-20 | 2008-11-19 | 东南大学 | Static excitation resonator capacitor vibration pick-up structure |
| CN102543572A (en) * | 2010-12-31 | 2012-07-04 | 上海丽恒光微电子科技有限公司 | Micro electro mechanical system (MEMS) switch apparatus, logic gate and integrated circuit |
| CN103779142A (en) * | 2010-12-31 | 2014-05-07 | 上海丽恒光微电子科技有限公司 | Logical gate |
| CN102543572B (en) * | 2010-12-31 | 2014-08-13 | 上海丽恒光微电子科技有限公司 | Micro electro mechanical system (MEMS) switch apparatus, logic gate and integrated circuit |
| CN103779142B (en) * | 2010-12-31 | 2017-06-06 | 上海丽恒光微电子科技有限公司 | Gate |
| CN108886330A (en) * | 2016-03-17 | 2018-11-23 | 西铁城时计株式会社 | Electrostatic electromechanical transducer |
| US10622917B2 (en) | 2016-03-17 | 2020-04-14 | Citizen Watch Co., Ltd. | Electrostatic-type electromechanical transducer |
| TWI704101B (en) * | 2019-03-29 | 2020-09-11 | 財團法人工業技術研究院 | Adjustable sensing capacitance microelectromechanical system (mems) apparatus |
| CN110853985A (en) * | 2019-11-01 | 2020-02-28 | 北京邮电大学 | Parallel type capacitance switch |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100521030C (en) | 2009-07-29 |
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