CN1293667C - Inverted microstrip transmission line based on micro electromechanical system and its producing method - Google Patents
Inverted microstrip transmission line based on micro electromechanical system and its producing method Download PDFInfo
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- CN1293667C CN1293667C CNB2003101227387A CN200310122738A CN1293667C CN 1293667 C CN1293667 C CN 1293667C CN B2003101227387 A CNB2003101227387 A CN B2003101227387A CN 200310122738 A CN200310122738 A CN 200310122738A CN 1293667 C CN1293667 C CN 1293667C
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- transmission line
- metal band
- microstrip transmission
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- holding wire
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Abstract
The present invention relates to an inverted microstrip transmission line based on a micro electromechanical system and a producing method thereof, which belongs to the technical field of communication. The inverted microstrip transmission line comprises a dielectric substrate, a metal strip band of a signal line, a metal strip band of a left grounding line, a metal strip band of a right grounding line, and a metal film bridge, wherein the left and the right metal strip bands of the grounding line and the metal strip band of the signal line are positioned at the upper surface of the dielectric substrate. The metal film bridge is connected with a left and a right metal strip bands of grounding lines arranged at both sides of the signal line, and is hung and covered above the metal strip band of the signal line in an arched shape, and a metal ground plane of the inverted microstrip transmission line is commonly formed. The inverted microstrip transmission line is integrally manufactured by adopting the micro mechanical process technique. The metal strip band of the signal line and the metal strip band of the grounding line are prepared on the medium substrate by a mask electroplating method, then, the metal strip bands of grounding lines of both sides are connected by a sacrificial layer technique, and the metal film bridge of the signal line is hung and covered to obtain the inverted microstrip transmission line. The inverted microstrip transmission line of the method has the advantages of no radiation loss, wide resistance and low loss.
Description
Technical field
The present invention relates to a kind of inversion microstrip transmission line and manufacture method thereof, specifically is a kind of inversion microstrip transmission line and manufacture method thereof based on MEMS (micro electro mechanical system).Belong to communication technical field.
Technical background
The development of microelectric technique impels components and parts constantly microminiaturized, integrated, corresponding therewith, as the microwave transmission line of one of main interconnection element of microwave circuit system, experiences the technological progress process that yardstick diminishes gradually equally.Yet the processing live width constantly diminishes, and causes the conductor losses of transmission line to enlarge markedly, thus traditional transmission line can not satisfy the demand, therefore, the conductor losses that reduces microwave transmission line becomes very important studying a question.Based on above-mentioned purpose, some arise at the historic moment based on the low-loss coplanar waveguide transmission line design of MEMS technology.
Find by literature search, people such as Fu Jiahui are at " electronic device ", the 26th volume, " Millimeter Wave Applications of micromechanics transmission line " delivered on the 2nd phase, this article point out that they have all reduced the loss of transmission line to some extent, still, they all need wet method to carve silicon making V-type groove, particularly the film support co-planar waveguide needs very complicated thin film technique and bonding technology, and complex process and integrated circuit technology are incompatible, thereby have limited their application.Compare with co-planar waveguide, the loss of microstrip line is lower usually, and the advantage of particularly being inverted microstrip transmission line is more obvious, but, in traditional inversion microstrip transmission line structure, the metal conduction band is with in ground plane lays respectively at different planes, and the difficulty of integrated design and manufacturing is very big.
Summary of the invention
The present invention is directed to the deficiency in the background technology, be inverted in tradition on the basis of microstrip transmission line, principle and rule in conjunction with Micrometer-Nanometer Processing Technology, proposed a kind of inversion microstrip transmission line and manufacture method thereof, made it obtain a kind of radiationless loss, wide resistance, low-loss microwave signal MEMS (micro electro mechanical system) transmission line based on MEMS (micro electro mechanical system).
The present invention is achieved by the following technical solutions, and the present invention is inverted microstrip transmission line and comprises: dielectric substrate, holding wire metal band, left earth connection metal band, right earth connection metal band and metal film bridge.Left and right sides earth connection metal band and holding wire metal band all are positioned at the upper surface of dielectric substrate, the metal film bridging connect the holding wire both sides about two earth connection metal bands, be the unsettled holding wire metal band top that covers of arch, constituted the metal ground plane of being inverted microstrip transmission line jointly.
The character of dielectric substrate has a direct impact the technical indicator of transmission line, the dielectric constant of backing material and loss factor are being dominated the groundwork parameter of transmission line, and the thickness of backing material, surface smoothness, conductivity etc. also have appreciable impact to processing and loss.Microwave circuit dielectric material commonly used such as GaAs, High Resistivity Si, aluminium oxide, glass, complex media material etc. all can adopt.In case selected backing material, just the key physical parameter of dielectric substrate such as dielectric constant, conductivity, dissipation constant etc. are definite substantially.The thickness of dielectric substrate is from the angle of little processing request, can get 100 microns to the millimeter level, and thicker do not have a clear and definite restriction.
The surface of dielectric substrate should have evenness preferably, otherwise is unfavorable for the size Control of fine structure, also might increase loss.Being applicable to that generally micro-machined substrate can meet the demands, also can satisfy the demand through simple attrition process in more coarse surface.
Holding wire metal band and earth connection metal band material can be selected the good copper of conductivity, silver or golden, can certainly adopt nickel or other alloy, the thickness of metal band has certain influence to the loss of integral transmission line, and thickness should be greater than become 2～3 times of skin thickness of metal material under this transmission frequency.Particularly the thickness effect of holding wire metal band is more obvious, generally can get micron order to tens of micron thickness.
The metal film bridge can adopt the same material of metal band, the film bridge is a base configuration with the left and right sides earth connection metal band of holding wire both sides, its sidewall can the such independent moulding of similar bridge pier, also can with bridge floor part disposal molding, the cross section of metal film bridge can adopt approximate rectangular, also can adopt the arch of semicircular.
The present invention is inverted microstrip transmission line and adopts the integrated manufacturing of micromachining technology, on dielectric substrate, prepare holding wire metal band and earth connection metal band with the mask plating method earlier, the metal film bridge that connects both sides earth connection metal band and unsettled covering holding wire then by the sacrifice layer process structure obtains radiationless loss, wide resistance, low-loss microwave signal inversion microstrip transmission line.
Below the present invention is done further qualification, concrete steps are as follows:
A. get rid of one deck thin photoresist on the dielectric substrate at the end accomplishing fluently, thickness is 2 μ m～8 μ m, preferred value is 5 μ m, form the mask that is used for electroplating after the photoetching, electroplating then makes institute's plating identical with photoresist thickness, metal material can be copper, silver, nickel or other alloy etc., thereby obtains the earth connection metal band on holding wire metal band, holding wire both sides;
B. on the basis of step a, get rid of one deck photoresist, thickness equates with designed film bridge height, scope can be 5 μ m～100 μ m, preferred value is 15 μ m, form mask after the photoetching, plating makes institute's plating equal with the photoresist surface then, and metal material can be identical with metal material among a, thereby obtain the sidewall of film bridge;
C. at the thin glue of basic last layer of step b, thickness is 2 μ m～8 μ m, and preferred value is 5 μ m, and mask plating obtains film bridge top then, and metal material is identical with metal material among a;
D. remove photoresist, just formed unsettled metal film bridge with being embedded in after sacrifice layer below the film bridge removes, the solution that removes photoresist can be used KOH solution or acetone soln, removes counterdie then, thereby obtains being inverted microstrip transmission line.
The inventive method innovation part is exactly repeatedly to utilize whirl coating, photoetching, mask plating in the micro mechanical technology, remove sacrifice layer process then and make microstrip line, and technology is simple, the precision of microstrip line can be controlled at micron dimension.
The holding wire of being inverted microstrip transmission line among the present invention is covered by the metal film bridge, thereby has avoided radiation loss.For the conventional co-planar waveguide, when characteristic impedance is low, electric current almost all is distributed in the metal band edge, thereby cause metal loss big, but for inversion microstrip transmission line of the present invention, electric current can be distributed in the surface of the lower surface and the holding wire metal band of film bridge, thereby its characteristic impedance can be lower, promptly has wide resistance characteristic.Just because of electric current can be distributed in the surface of the following of film bridge and holding wire metal band, caused lower sheet resistance, thereby it has low this advantage of loss.This preparation method adopts fine process, have can produce in batches, low-cost, with the good advantage of ic process compatibility.In a word, inversion microstrip transmission line of the present invention is a kind of radiationless loss, wide resistance, low-loss microwave signal MEMS (micro electro mechanical system) transmission line.
Description of drawings
Fig. 1 the present invention is inverted the microstrip transmission line structure schematic diagram
Embodiment
As shown in Figure 1, the present invention is inverted microstrip transmission line and comprises: dielectric substrate 1, holding wire metal band 2, left earth connection metal band 3, right earth connection metal band 4 and metal film bridge 5.Left side earth connection metal band 3, right earth connection metal band 4 and holding wire metal band 4 all are positioned at the upper surface of dielectric substrate 1, metal film bridge 5 connects left earth connection metal band 3, the right earth connection metal band 4 of holding wire metal band 2 both sides, be unsettled holding wire metal band 2 tops that cover of arch, constituted the metal ground plane of being inverted microstrip transmission line jointly.
The cross section of metal film bridge 5 adopts approximate rectangular, perhaps adopts the arch of semicircular.The thickness of structure each several part all can on several microns.
Holding wire metal band 2 and earth connection metal band 3,4 all adopt the preparation of mask plating method, and material is selected good copper, the silver or golden of conductivity, perhaps adopts nickel or other alloy.
Below in conjunction with embodiment the present invention is done further understanding.
Embodiment 1:
50 Ω transmission line manufacture method steps:
1. mask plating metallic copper on the alumina medium substrate, to constitute holding wire metal band and earth connection metal band at grade, wherein alumina medium thickness is elected 400 μ m as, metallic copper thickness is elected 6 μ m as, holding wire metal band width is elected 16 μ m as, and the groove width between holding wire and the earth connection is elected 32 μ m as;
2. get rid of the photoresist that thickness is 15 μ m, to form mask, electroplating then highly is the metallic copper of 15 μ m after the photoetching, highly is the two side of metal film bridge of 15 μ m to obtain;
3. the mask plating metallic copper constitutes the top of metal film bridge to connect the two side, and metallic copper thickness is elected 6 μ m as;
4. remove photoresist and counterdie, comprise the photoresist that serves as sacrifice layer below the metal film bridge, obtain being inverted microstrip transmission line structure at last.
The characteristic impedance of the inversion microstrip line transmission that this technology is made is 50 Ω, and loss can be reduced to 0.4dB/cm.
Embodiment 2:
30 Ω transmission line making steps:
1. mask plating copper on the alumina medium substrate, to be formed in conplane holding wire metal band and earth connection metal band, wherein alumina medium thickness is elected 400 μ m as, metallic copper thickness is elected 4 μ m as, holding wire metal band width is elected 40 μ m as, and the groove width between holding wire and the earth connection is elected 20 μ m as;
2. get rid of the photoresist that thickness is 15 μ m, to form mask, electroplating then highly is the metallic copper of 15 μ m after the photoetching, highly is the two side of metal film bridge of 15 μ m to obtain;
3. the mask plating metallic copper constitutes the top of metal film bridge to connect the two side, and metallic copper thickness is elected 4 μ m as;
4. remove photoresist and counterdie, comprise the photoresist that serves as sacrifice layer below the metal film bridge, obtain being inverted microstrip transmission line structure at last.
The characteristic impedance of the inversion microstrip line transmission that this technology is made is 30 Ω, and loss can be reduced to 0.5dB/cm.
Embodiment 3:
50 Ω transmission line making steps:
1. mask plating copper on the alumina medium substrate, to be formed in conplane holding wire metal band and earth connection metal band, wherein alumina medium thickness is elected 400 μ m as, metallic copper thickness is elected 5 μ m as, holding wire metal band width is elected 10 μ m as, and the groove width between holding wire and the earth connection is elected 20 μ m as;
2. get rid of the photoresist that thickness is 15 μ m, to form mask, electroplating then highly is the metallic copper of 15 μ m after the photoetching, highly is the two side of metal film bridge of 15 μ m to obtain;
3. the mask plating metallic copper constitutes the top of metal film bridge to connect the two side, and metallic copper thickness is elected 5 μ m as;
4. remove photoresist and counterdie, comprise the photoresist that serves as sacrifice layer below the metal film bridge, obtain being inverted microstrip transmission line structure at last.
The characteristic impedance of the inversion microstrip line transmission that this technology is made is 50 Ω, and loss can be reduced to 0.65dB/cm.
Claims (5)
1, a kind of inversion microstrip transmission line based on MEMS (micro electro mechanical system), comprise: dielectric substrate (1), holding wire metal band (2), earth connection metal band (3), earth connection metal band (4) and metal bridge (5), it is characterized in that, left side earth connection metal band (3), right earth connection metal band (4) and holding wire metal band (4) all are positioned at the upper surface of dielectric substrate (1), metal film bridge (5) connects the left earth connection metal band (3) of holding wire metal band (2) both sides, right earth connection metal band (4), be unsettled holding wire metal band (2) top that covers of arch, constituted the metal ground plane of being inverted microstrip transmission line jointly.
2, the inversion microstrip transmission line based on MEMS (micro electro mechanical system) as claimed in claim 1, it is characterized in that, metal film bridge (5) is with the left and right sides earth connection metal band (3 of holding wire metal band (2) both sides, 4) be base configuration, the such independent moulding of the similar bridge pier of its sidewall is perhaps with bridge floor part disposal molding.
3, the inversion microstrip transmission line based on MEMS (micro electro mechanical system) as claimed in claim 1 or 2 is characterized in that, the shape of cross section of metal bridge (5) is square or the semicircular arch.
4, a kind of manufacture method of the inversion microstrip transmission line based on MEMS (micro electro mechanical system), it is characterized in that, adopt the integrated manufacturing of micromachining technology, on dielectric substrate, prepare holding wire metal band and earth connection metal band with the mask plating method earlier, connect the metal film bridge of both sides earth connection metal band and unsettled covering holding wire by the sacrifice layer process structure then, thereby obtain being inverted microstrip transmission line.
5, the manufacture method of the inversion microstrip transmission line based on MEMS (micro electro mechanical system) as claimed in claim 4 is characterized in that concrete steps are as follows:
A. get rid of one deck thin photoresist on the dielectric substrate at the end accomplishing fluently, thickness is 2 μ m～8 μ m, preferred value is 5 μ m, form the mask that is used for electroplating after the photoetching, electroplating then makes institute's plating identical with photoresist thickness, metal material can be copper, silver, nickel or other alloy etc., thereby obtains the earth connection metal band on holding wire metal band, holding wire both sides;
B. get rid of one deck photoresist on the basis of step a, thickness equates that with designed film bridge height scope can be 5 μ m～100 μ m, form mask after the photoetching, plating makes institute's plating equal with the photoresist surface then, and metal material is identical with metal material among a, thereby obtains the sidewall of film bridge;
C. at the thin glue of basic last layer of step b, thickness is 2 μ m～8 μ m, and mask plating obtains film bridge top then, and metal material is identical with metal material among the step a;
D. remove photoresist, just formed unsettled metal film bridge with being embedded in after sacrifice layer below the film bridge removes, the solution that removes photoresist can be used KOH solution or acetone soln, removes counterdie then, thereby obtains being inverted microstrip transmission line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101227387A CN1293667C (en) | 2003-12-19 | 2003-12-19 | Inverted microstrip transmission line based on micro electromechanical system and its producing method |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2003101227387A CN1293667C (en) | 2003-12-19 | 2003-12-19 | Inverted microstrip transmission line based on micro electromechanical system and its producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1555107A CN1555107A (en) | 2004-12-15 |
| CN1293667C true CN1293667C (en) | 2007-01-03 |
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| CNB2003101227387A Expired - Fee Related CN1293667C (en) | 2003-12-19 | 2003-12-19 | Inverted microstrip transmission line based on micro electromechanical system and its producing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103730712A (en) * | 2013-12-12 | 2014-04-16 | 中国电子科技集团公司第四十一研究所 | Method for manufacturing high shielding quasi plane transmission line |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3904997A (en) * | 1973-09-13 | 1975-09-09 | Microwave Ass | Trapped-radiation microwave transmission line |
| US5990768A (en) * | 1996-11-28 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Millimeter waveguide and a circuit apparatus using the same |
-
2003
- 2003-12-19 CN CNB2003101227387A patent/CN1293667C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3904997A (en) * | 1973-09-13 | 1975-09-09 | Microwave Ass | Trapped-radiation microwave transmission line |
| US5990768A (en) * | 1996-11-28 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Millimeter waveguide and a circuit apparatus using the same |
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| Publication number | Publication date |
|---|---|
| CN1555107A (en) | 2004-12-15 |
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Granted publication date: 20070103 Termination date: 20100119 |