CN2746519Y - T-shaped beam and parallel plate micro-mechanical variable capacitor - Google Patents
T-shaped beam and parallel plate micro-mechanical variable capacitor Download PDFInfo
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- CN2746519Y CN2746519Y CN 200420079335 CN200420079335U CN2746519Y CN 2746519 Y CN2746519 Y CN 2746519Y CN 200420079335 CN200420079335 CN 200420079335 CN 200420079335 U CN200420079335 U CN 200420079335U CN 2746519 Y CN2746519 Y CN 2746519Y
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- shaped beam
- tee girder
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Abstract
A T-shaped beam and parallel plate micro-mechanical variable capacitor is a realization of micro-machine variable capacitance variable capacitor using a T-shaped beam and parallel plates. The structure realizes capacitive variation by using a form of voltage change between parallel plates. The layers of the structure are listed sequentially from top to bottom as follows: a top aluminous crown (1), a dielectric layer (2), a bottom aluminous pole plate (3), an insulating barrier (4), a conductivity shielding layer (5) and a silicon bulk (6). The T-shaped beams(7) are disposed symmetrically on the outer side of the top aluminous crown (1). The T-shaped beam(7)is composed of a T-shaped beam connecting arm (7.1) and a T-shaped beam anchor zone (7.2). A U-shaped port slot (7.3) is arranged in the middle part of the T-shaped beam connecting arm (7.1). The T-shaped beam anchor zone (7.2) is positioned in the U-shaped port slot (7.3). An anchor block(7.2.1) is disposed at the bottom of the T-shaped beam anchor zone (7.2). The T-shaped beam and parallel plate micro-mechanical variable capacitor has simple architecture, higher dependability, and the technology of production is compatible with the mainstream of CMOS-process.
Description
Technical field
The utility model is to utilize tee girder and parallel-plate structure to realize a micro-mechanical variable capacitor, belongs to the technical field that microelectronic component is made.
Background technology
Because in person-to-person communication and the miniaturization of military communication neighborhood system volume, high reliability and the demand that reduces cost, also carried out research to MEMS (micromechanics) device in RF application.Many modern radio systems need to have wide amplitude modulation, low noise high-quality voltage-controlled oscillator (VCO) in the frequency range of several gigahertzs, its adjustable range must be not less than the frequency range due to the flow-route and temperature variation, and adjustability is provided by a variable capacitance usually.Because the variable capacitance that is integrated on the chip is difficult to realize high quality factor that variable capacitance is realized with outer member usually.Low noise just means the circuit that must have high quality factor, the inductance and the variable capacitance that also just need high quality factor, integrated VCO relies on variable capacitance diode usually and realizes frequency adjustment, yet in low noise applications, the quality factor of integrating varactor is not enough big, therefore, usually must select another kind of variable capacitance.
For a long time because the structure particularity of tee girder parallel-plate MEMS variable capacitance, the research and development of such device only are confined to scientific research field.The large-scale production that tee girder parallel-plate MEMS variable capacitor structure is applied to integrated circuit exists and a series of obstacles such as incompatible, the repeatable poor reliability of main flow technology, production cost height.
Summary of the invention
Technical problem: the purpose of this utility model provides a kind of tee girder parallel-plate micro-mechanical variable capacitor that uses integrated circuit technology to realize.The performance of this variable capacitance is relatively good, and all has preferably in all many-sides such as material, technology, reliability, repeatability and production costs and to improve, for radio frequency and microwave circuit provide a kind of reasonable variable capacitance.
Technical scheme: tee girder parallel-plate MEMS variable capacitance is different from the transfiguration pattern of traditional variable capacitance diode, this structure utilizes the form of change in voltage between the parallel-plate to realize changes in capacitance, its layer structure order from top to bottom is: top crown aluminium, dielectric layer, bottom crown aluminium, insulating barrier, conductive shielding layer, silicon substrate; The tee girder that is provided with in the outside of top crown aluminium symmetry.Tee girder is made of tee girder linking arm and tee girder anchor district, has the groove of " U " shape in the centre of tee girder linking arm, and tee girder anchor district is positioned at the groove of this " U " shape, and the bottom in tee girder anchor district is provided with an anchor block.
The form that tee girder parallel-plate MEMS variable capacitor structure of the present utility model is used parallel plate capacitor realizes top-down tee girder parallel-plate MEMS variable capacitor structure, this structure is easy to realize different electric capacity number and position by using different etching domains, no matter how what and position shape of electric capacity number all can be determined by a lithography step.
Based on the Promethean invention of this structure and numerous advantageous characteristic that should invention, distinguish whether to be the standard of this structure as follows:
(a) utilize the form of parallel-plate to realize changes in capacitance, be respectively top crown-dielectric layer (or air layer or air and medium mixed layer)-bottom crown-insulating barrier-conductive shielding layer-silicon substrate from top to bottom.
(b) tie-beam partly is novel tee girder structure.
(c) manufacturing process and silicon CMOS process compatible are made simple and can be in enormous quantities.
The structure that satisfies above three conditions is the structure of this tee girder parallel-plate MEMS variable capacitance.
When adding certain voltage between last bottom crown when, top crown is because the effect of electrostatic attraction moves downward certain distance, thereby makes capacitance change.Make a general survey of the technical process of this tee girder parallel-plate of whole realization MEMS variable capacitor structure, wherein without any special material is not introduced any complicated special technology yet, and CMOS, the BiCMOS technology with main flow is compatible mutually fully.Therefore, the tee girder parallel-plate MEMS variable capacitor structure of using among the present invention can improve the performance that traditional variable capacitance diode uses in integrated circuit, and then can promote the development of IC industry.
Beneficial effect: the tee girder parallel-plate MEMS variable capacitor structure in the utility model, based on the implementation method of main stream of CMOS, BiCMOS technology, repeatable reliability all is greatly improved, and production cost significantly reduces.Simultaneously, tee girder parallel-plate MEMS variable capacitor structure can be realized variable capacitance more easily than previous methods, and realize the number of all types electric capacity and position only need to determine a lithography step, really realized the control easily and effectively of electric capacity number and position under the unified agent structure.
Therefore, realize that with the MEMS technology tunable capacitor has outstanding advantage.Be easy to realize high reliability, high duplication, the low production cost of device, well satisfy the basic demand of integrated circuit device.So the structure of MEMS tunable capacitor has using value and vast market potentiality preferably.
Tee girder parallel-plate MEMS variable capacitance has following major advantage: one, this is relatively simple for structure, and reliability is easy to realize than higher; Two, manufacture craft of this device and main stream of CMOS process compatible, in integrated circuit, need not add special process and can realize this structure, be convenient to make together with circuit, thereby entire circuit is greatly reduced, only need in the end in addition together simple postprocessing working procedures, thereby make the manufacturing of this device not influence the performance of circuit: three, this structural volume is small, has only the hundreds of micron, electrical length is smaller, thereby be fit to the radio frequency of high frequency and the simulation process of microwave signal, be particularly suitable for constituting the carrier wave of radio frequency and microwave signal and the generation circuit and the multiband filter circuit of local oscillation signal.
Description of drawings
Fig. 1 is the mechanical structure schematic diagram of tee girder parallel-plate MEWS variable capacitance.
Fig. 2 is the partial structurtes generalized section of tee girder parallel-plate MEMS variable capacitance thickness direction.
Fig. 3 is the equivalent circuit structure schematic diagram of tee girder parallel-plate MEMS variable capacitance.
The structural representation of the tee girder part of the T shape fine strain of millet parallel-plate MEMS variable capacitance that the CMOS technology that is based on Fig. 4 realizes.
Fig. 5 is the regulating characteristics figure of tee girder parallel-plate MEMS variable capacitance.
Have among the above figure: top crown aluminium 1, dielectric layer 2, bottom crown aluminium 3, insulating barrier 4, conductive shielding layer 5, silicon substrate 6, tee girder 7, tee girder linking arm 7.1, tee girder anchor district 7.2, the groove 7.3 of " U " shape, anchor block 7.21.
Embodiment
Tee girder parallel-plate MEMS variable capacitor structure of the present utility model, employing is based on the implementation method of CMOS technology, this structure utilizes the form of change in voltage between the parallel-plate to realize changes in capacitance, its layer structure order from top to bottom is: top crown aluminium 1, dielectric layer 2, bottom crown aluminium 3, insulating barrier 4, conductive shielding layer 5, silicon substrate 6; Be provided with tee girder 7 in the outside of top crown aluminium 1 symmetry.Tee girder 7 is made of tee girder linking arm 7.1 and tee girder anchor district 7.2, has the groove 7.3 of " U " shape in the centre of tee girder linking arm 7.1, and tee girder anchor district 7.2 is positioned at the groove 7.3 of this " U " shape.The bottom in shape fine strain of millet anchor district 7.2 is provided with an anchor block 7.2.1.
We have designed the concrete technology based on the tee girder parallel-plate MEMS variable capacitance of CMOS technology, and will use this technology manufacturing to have the tee girder parallel-plate MEMS variable capacitance of better characteristic.
As Fig. 2.Concrete processing step and parameter are as follows:
1, substrate preparation and circuit is fabricated to typical C MOS technology;
2, the preparation of oxide layer, (preparation of cmos circuit midfield oxygen), thickness is 0.2-3.0um, representative value is 0.7um;
3, deposit doping p+ polysilicon membrane (polysilicon gate) above the oxygen on the scene is made screen in this capacitor.The spin coating photoresist develops, and is etched into the pattern of regulation.(carving same photolithography plate of polysilicon gate in the circuit) thickness is 0.3-0.8um, and representative value is 0.5um; Resistance is 10-100 Ω/sq, and representative value is 30 Ω/sq;
4, dielectric SiO
2Thickness was 0.2-3.0um between the preparation of film (being used for the layer insulation medium between the multilayer wiring in the circuit) was two-layer, and representative value is 1um; Be deposited on the metal lead wire that plays circuit interconnection effect above the dielectric film and all etch away (by the circuit technology decision), guarantee SiO at last
2The thickness of film is 0.5-8um, and representative value is 4um;
5, the metal aluminium lamination of the ground floor of deposit interconnection is as the bottom crown of capacitor, and thickness is 0.2-2.0um, and representative value is 0.6um; The spin coating photoresist develops, and is etched into the pattern of regulation.(carving same photolithography plate of ground floor aluminum metal interconnection line in the circuit);
6, the preparation of PSG sacrifice layer.Deposit PSG, thickness are 0.2-3.5um, and representative value is 1.5um, and the spin coating photoresist develops, and anchor district etching is come out.The anchor district will be made in SiO
2Go up influence to guarantee mechanical strength and to avoid being subjected to sacrifice layer to discharge;
7, the preparation of top crown aluminium.The last layer of aluminum of deposit.Thickness is 0.2-1.5um, and typical thickness is 0.6um.Fill up the anchor district, the spin coating photoresist develops, and is etched into the pattern of regulation.(carving same photolithography plate of second layer aluminum metal interconnection line in the circuit).The centre is provided with many apertures, so that the release of sacrifice layer;
8, the release of sacrifice layer; Use phosphorosilicate glass etching process corrosion sacrifice layer;
9, deposit passivating film: adopt the deposit of CMOS standard technology.
The utility model proposes a kind of parallel-plate MEMS tunable capacitor of new T-shape girder construction, have the characteristics of high Q value and wide tuning range.By micromechanics, movably, the VVC voltage variable capacitance that metal plate is formed provides the raising of variable capacitance performance in the enough sheet.Be easy to realize high reliability, high duplication, the low production cost of device, well satisfy the basic demand of integrated circuit device.Therefore, tee girder parallel-plate MEMS variable capacitance has using value and vast market potentiality preferably.
This variable capacitor structure is fairly simple, reliability is than higher, manufacture craft of this device and main stream of CMOS process compatible, in integrated circuit, need not add special process and can realize this structure, be convenient to make together with circuit, thereby entire circuit is greatly reduced, only need in the end in addition together simple postprocessing working procedures, thereby make the manufacturing of this device not influence the performance of circuit, volume is small, have only the hundreds of micron, electrical length is smaller, thereby is fit to the radio frequency of high frequency and the simulation process of microwave signal.
Claims (2)
1, a kind of tee girder parallel-plate micro-mechanical variable capacitor, it is characterized in that this structure utilizes the form of change in voltage between the parallel-plate to realize changes in capacitance, its layer structure order from top to bottom is: top crown aluminium (1), dielectric layer (2), bottom crown aluminium (3), insulating barrier (4), conductive shielding layer (5), silicon substrate (6); Be provided with tee girder (7) in the outside symmetry of top crown aluminium (1).
2, tee girder parallel-plate micro-mechanical variable capacitor according to claim 1, it is characterized in that tee girder (7) is made of tee girder linking arm (7.1) and tee girder anchor district (7.2), have the groove (7.3) of " U " shape in the centre of tee girder linking arm (7.1), tee girder anchor district (7.2) is positioned at the groove (7.3) of this " U " shape, and the bottom in tee girder anchor district (7.2) is provided with an anchor block (7.2.1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420079335 CN2746519Y (en) | 2004-09-10 | 2004-09-10 | T-shaped beam and parallel plate micro-mechanical variable capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420079335 CN2746519Y (en) | 2004-09-10 | 2004-09-10 | T-shaped beam and parallel plate micro-mechanical variable capacitor |
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| Publication Number | Publication Date |
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| CN2746519Y true CN2746519Y (en) | 2005-12-14 |
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| CN 200420079335 Expired - Fee Related CN2746519Y (en) | 2004-09-10 | 2004-09-10 | T-shaped beam and parallel plate micro-mechanical variable capacitor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100464383C (en) * | 2004-09-10 | 2009-02-25 | 东南大学 | T-shaped beam parallel plate micromechanical variable capacitor and manufacturing process thereof |
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2004
- 2004-09-10 CN CN 200420079335 patent/CN2746519Y/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100464383C (en) * | 2004-09-10 | 2009-02-25 | 东南大学 | T-shaped beam parallel plate micromechanical variable capacitor and manufacturing process thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |