CN1805156A - Photoelectric sensor based on one-dimensional semiconductor nano structure and manufacturing method thereof - Google Patents
Photoelectric sensor based on one-dimensional semiconductor nano structure and manufacturing method thereof Download PDFInfo
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- CN1805156A CN1805156A CNA2006100009957A CN200610000995A CN1805156A CN 1805156 A CN1805156 A CN 1805156A CN A2006100009957 A CNA2006100009957 A CN A2006100009957A CN 200610000995 A CN200610000995 A CN 200610000995A CN 1805156 A CN1805156 A CN 1805156A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000000992 sputter etching Methods 0.000 claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 11
- 229910052793 cadmium Inorganic materials 0.000 claims description 11
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 239000002127 nanobelt Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 6
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000002071 nanotube Substances 0.000 claims description 5
- 239000002070 nanowire Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract description 2
- 238000005459 micromachining Methods 0.000 abstract 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 1
- 238000001962 electrophoresis Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001476 alcoholic effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a photoelectric sensor based on a one-dimensional semiconductor nano structure and a manufacturing method, comprising the following steps: a single crystal silicon wafer-like substrate; a silicon dioxide layer which grows on the surface of the monocrystalline silicon chip type substrate through a thermal oxidation method and a silicon nitride layer which is deposited on the surface of the silicon dioxide layer through a low-pressure chemical vapor deposition method or a plasma enhanced chemical vapor deposition method in sequence; the silicon dioxide layer and the silicon nitride layer form an insulating layer; further comprising: a comb electrode pair composed of a first comb electrode and a second comb electrode, which is prepared on the surface of the insulating layer by a photoetching/ion etching method; the multiple comb teeth ends of the electrode pair are oppositely arranged, and a one-dimensional semiconductor nano structure is assembled between the multiple comb teeth ends; has the advantages that: the manufacturing of the microelectrode pair is a standard micromachining process, and the method is simple; the one-dimensional semiconductor nano structure has small size, large surface area/volume ratio and high photoelectric efficiency, and the simple electrophoretic assembly can realize batch production; the photoelectric sensor has small size and high sensitivity, and can be used for optical detection, optical switches and the like.
Description
Technical field
The present invention relates to the photoelectric sensor field, particularly a kind of photoelectric sensor based on one-dimensional nanometer semiconductor structure and preparation method thereof.
Background technology
Photoelectric sensor is the critical component in the present information detection technique.The performance that how to improve the luminous sensitivity of photosensitive sensing arrangement and improve photosensitive unit becomes a subject matter of this area research.Under illumination, the optical semiconductor sensitive structure can absorb incident light.Incident light excites the generation photo-generated carrier after being absorbed in the photaesthesia structure, thereby causes resistance to change, and by measuring the variation of this photaesthesia structural resistance, can obtain intensity variations.
The sensitivity level of photoelectric sensor and its sensitive thin film structural table area/volume ratio have direct relation, and traditional photoelectric sensing structure is subject to processing the restriction of technology, and the surface area/volume ratio of its sensitive structure is bigger, and sensitivity is difficult to further improve.Thereby, need a kind of material that surface area/volume ratio more greatly be arranged as the photaesthesia structure, obtain the light sensor that size is less, sensitivity is higher with making.One-dimensional nanometer semiconductor structure has had the big essential advantage of surface area/volume ratio, can satisfy the requirement of the sensitivity that improves photoelectric sensor.
Summary of the invention
The object of the invention is to provide a kind of photoelectric sensor based on one-dimensional nanometer semiconductor structure.Because the characteristic size of one-dimensional nanometer semiconductor structure has had bigger surface area/volume ratio in nanometer scale, can overcome the defective of conventional photoelectric sensor.
Technical scheme of the present invention is as follows:
Photoelectric sensor based on one-dimensional nanometer semiconductor structure provided by the invention comprises:
One monocrystalline silicon chip matrix 10;
Grow in described monocrystalline silicon chip matrix 10 lip-deep silicon dioxide layers 21 and adopt Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method to be deposited on described silicon dioxide layer 21 lip-deep silicon nitride layers 22 by thermal oxidation method successively; Described silicon dioxide layer 21 and silicon nitride layer 22 constitute insulating barrier 2;
It is characterized in that, also comprise:
It is right to be prepared in the lip-deep pectinate electrodes that is made of first pectinate electrodes 11 and second pectinate electrodes 12 of described insulating barrier 2 by photoetching/ion etching method; The right many nose of comb of described pectinate electrodes are staggered relatively, between be assembled with one-dimensional nanometer semiconductor structure 13;
Described pectinate electrodes is to being that the pectinate electrodes of cadmium/gold, cadmium/platinum, titanium/gold or titanium/platinum composite is right; Or be that the pectinate electrodes of aluminium or copper material is right; Described one-dimensional nanometer semiconductor structure 13 is the one-dimensional nanometer semiconductor structure of zinc oxide, zinc nitride, gallium nitride or cadmium sulfide material.
The manufacture method of the photoelectric sensor based on one-dimensional nanometer semiconductor structure provided by the invention, its making step is as follows:
(1) by the thermal oxidation method layer of silicon dioxide layer 21 of on described monocrystalline silicon chip matrix 10 surfaces, growing; Adopt Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method deposit one deck silicon nitride layer 22 on described silicon dioxide layer 21 surfaces again; Described silicon dioxide layer 21 and silicon nitride layer 22 constitute insulating barrier 2;
(2) on silicon nitride layer 22 surfaces of described insulating barrier 2, cover one deck cadmium or titanium resilient coating, and on described buffer-layer surface sputter one deck gold or platinum layer; Perhaps directly on silicon nitride layer 22 surfaces of described insulating barrier 2, cover layer of aluminum or copper metal layer;
(3) by photoetching/described metal level of ion etching method etching, it is right to prepare the pectinate electrodes that is made of first pectinate electrodes 11 and second pectinate electrodes 12; The right many nose of comb of described pectinate electrodes are staggered relatively;
(4) at assembling one-dimensional nanometer semiconductor structure 13 between the right many nose of comb of described pectinate electrodes: on first pectinate electrodes 11 of described comb-tooth-type electrode pair and second pectinate electrodes 12, apply a high-frequency ac voltage with a high frequency ac signal generator, this high-frequency ac voltage frequency 100kHz-200MHz, the peak-to-peak value scope is 1～30 volt; The drips of solution that to take from the absolute alcohol solution that is suspended with the one dimension semiconductor nano material is added between the comb-tooth-type electrode pair, under the effect of high-frequency ac voltage, there is one or more one-dimensional nanometer semiconductor structure will be adsorbed between the right many nose of comb of described pectinate electrodes, thereby finishes the assembling of one-dimensional nanometer semiconductor structure 13;
Described one-dimensional nanometer semiconductor structure 13 is one dimension semiconductor nano belt, nano wire or the nanotube of zinc oxide, zinc nitride, gallium nitride or cadmium sulfide material.
Described one-dimensional nanometer semiconductor structure is to adopt the growth of chemical vapor deposition (CVD) method.
The present invention finishes after the structure fabrication, loads a direct voltage on described electrode pair, measures its loop current.This loop current has direct relation with extraneous irradiation light intensity, can be used as a kind of photoelectric sensor.
Photoelectric sensor based on one-dimensional nanometer semiconductor structure of the present invention has following beneficial effect:
1) the right making of microelectrode belongs to the standard micro fabrication, and method is simple;
2) to compare other semiconductor photoelectric devices littler for the one-dimensional nanometer semiconductor structure size, and the surface area ratio is bigger, and photoelectric efficiency is higher;
3) adopt simple electrophoresis method, can realize the batch process of transducer;
4) this photoelectric sensor size is little, highly sensitive, can be used for light detection, optical switch etc.
Description of drawings
Fig. 1 is at structure of the present invention and working state schematic representation;
Fig. 2-1, Fig. 2-2, Fig. 2-3, Fig. 2-4, Fig. 2-5 and Fig. 2-6 are manufacture craft flow chart of the present invention;
Fig. 3 is the vertical view of Fig. 1.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
The making of photoelectric sensor of the present invention comprises generally: MEMS technical process and one-dimensional nanometer semiconductor structure assembling process.The MEMS technical process mainly is that the formation pectinate electrodes is right on a monocrystalline silicon chip matrix; The one-dimensional nanometer semiconductor structure assembling mainly is to adopt electrophoresis method that one-dimensional nanometer semiconductor structure is assembled on the electrode pair for preparing.Through above two steps, will obtain photoelectric sensor.
In one embodiment of the invention, after MEMS technical process and electrophoresis assembling one-dimensional nanometer semiconductor structure process finishes based on the photoelectric sensor of one-dimensional nanometer semiconductor structure as shown in Figure 1; Fig. 2-1, Fig. 2-2, Fig. 2-3, Fig. 2-4, Fig. 2-5 and Fig. 2-6 are its manufacture craft schematic diagram; Fig. 3 is the vertical view of Fig. 1; As seen from the figure, photoelectric sensor based on one-dimensional nanometer semiconductor structure of the present invention, comprise a monocrystalline silicon chip matrix 10, it is right to be distributed with the pectinate electrodes that is made of first comb electrodes 11 and second pectinate electrodes 12 on this matrix 10, the relative arrangement of many nose of comb of first comb electrodes 11 and second pectinate electrodes 12; The one-dimensional nanometer semiconductor structure of between the right many nose of comb of pectinate electrodes, assembling 13, described one-dimensional nanometer semiconductor structure 13 is assembled up through electrophoresis method, the material of this one-dimensional nanometer semiconductor structure 13 can be zinc oxide, zinc nitride, gallium nitride or cadmium sulfide, it can be nanotube, nano belt or nano wire in form, will describe as an example with zinc oxide nano-belt in the present embodiment.
Shown in Fig. 2-1, Fig. 2-2, Fig. 2-3, Fig. 2-4, Fig. 2-5 and Fig. 2-6: the embodiment that complete machining process among the present invention is shown by the process sequence details drawing, comprise the steps 1)～6), these step numbers 1)～6) with corresponding one by one as Fig. 2-1, Fig. 2-2, Fig. 2-3, Fig. 2-4, Fig. 2-5 and Fig. 2-6.Specific as follows:
1) provide a monocrystalline silicon piece matrix 10, present embodiment is an example with 5 cun silicon chips;
2) adopt thermal oxidation method at silicon substrate upper surface growth layer of silicon dioxide (SiO2) layer 21, thickness is about 400 ;
Adopt Low Pressure Chemical Vapor Deposition (LPCVD) or plasma reinforced chemical vapour deposition method (PECVD) deposit one deck silicon nitride (Si
3N
4) layer 22, thickness is about 2000 ; Step 2) and the silicon dioxide layer 21 that obtains in the step 3) and silicon nitride layer 22 constitute insulating barriers 2;
4) splash-proofing sputtering metal layer on silicon nitride layer 22 is as gold (Au) layer or platinum (Pt) layer; Also has a thin resilient coating between metal level and the silicon nitride layer 22, as cadmium (Cr) layer or titanium (Ti) layer; Described metal level and resilient coating form complex metal layer; As cadmium/gold, cadmium/platinum, titanium/gold or titanium/platinum complex metal layer; The complex metal layer of present embodiment is cadmium/golden complex metal layer, and its thickness is 40/800 , and other all can as cadmium/platinum, titanium/gold or titanium/platinum complex metal layer;
Also can be on silicon nitride layer 22 directly sputtered aluminum or copper metal layer,
5) by the graphical described complex metal layer of photoetching/ion etching (RIE), the pectinate electrodes that forms among Fig. 1 is right;
The one dimension semiconductor zinc oxide nano-belt that 6) will prepare is put into an absolute alcohol solution, through ultrasonic dispersion, forms the alcohol suspension with nanometer one-dimensional zinc oxide nanometer material; One high frequency ac signal generator is applied a high-frequency ac voltage on first pectinate electrodes 11 of comb-tooth-type electrode pair and second pectinate electrodes 12, the frequency of this high-frequency ac voltage is that 100kHz (can decide as required, be 100MHz, 200MHz, as long as between 100kHz-200MHz all can) the peak value scope is 10 volts and (can decides as required, be 1 volt, 20 volts or 30 volts, if between 1 volt-30 volts all can); The several alcoholic solutions that are suspended with many zinc oxide nano-belts are dropped between the comb-tooth-type electrode pair, under the effect of ac high-frequency voltage, to there be one or more zinc oxide nano-belt to be adsorbed on the right many nose of comb of described pectinate electrodes, thereby finish the assembling of one dimension semiconductor zinc oxide nano-belt;
What present embodiment used is the one dimension semiconductor zinc oxide nano-belt, uses one dimension semiconductor nano belt, nano wire or the nanotube of zinc nitride, gallium nitride or cadmium sulfide material all can certainly.
After photoelectric sensor making of the present invention finishes, it is integrated in the test circuit, promptly can be used as photoelectric sensor and use; As shown in Figure 1.The test circuit of its photoelectric sensor comprises a DC-stabilized circuit 31 and a weak current measuring circuit 32, and they measure the loop with described one-dimensional nanometer semiconductor structure and pectinate electrodes to forming one.Voltage of DC-stabilized circuit 31 outputs is applied to a pectinate electrodes of weak current measuring circuit 32 to last, on another electrode by one-dimensional nanometer semiconductor structure 13, first pectinate electrodes 12 and weak current measuring circuit 32, formed current circuit, weak current measuring circuit 32 can accurately measure the electric current in loop.The irradiation intensity variations can cause the resistance of one-dimensional nanometer semiconductor structure 13 to produce very big variation, thereby loop current also produces great changes, so the variation of this electric current has reflected extraneous intensity variations.
Claims (2)
1, a kind of photoelectric sensor based on one-dimensional nanometer semiconductor structure comprises:
One monocrystalline silicon chip matrix (10);
Grow in the lip-deep silicon dioxide layer of described monocrystalline silicon chip matrix (10) (21) and adopt Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method to be deposited on the lip-deep silicon nitride layer of described silicon dioxide layer (21) (22) by thermal oxidation method successively; Described silicon dioxide layer (21) and silicon nitride layer (22) constitute insulating barrier (2);
It is characterized in that, also comprise:
It is right to be prepared in the lip-deep pectinate electrodes by first pectinate electrodes (11) and second pectinate electrodes (12) formation of described insulating barrier (2) by photoetching/ion etching method; The right many nose of comb of described pectinate electrodes are staggered relatively, between be assembled with one-dimensional nanometer semiconductor structure (13);
Described pectinate electrodes is to being that the pectinate electrodes of cadmium/gold, cadmium/platinum, titanium/gold or titanium/platinum composite is right; Or be that the pectinate electrodes of aluminium or copper material is right; Described one-dimensional nanometer semiconductor structure 13 is one dimension semiconductor nano belt, nano wire or the nanotube of zinc oxide, zinc nitride, gallium nitride or cadmium sulfide material.
2, the manufacture method of the described photoelectric sensor based on one dimension semiconductor nanometer equipment structure of a kind of claim 1, its step is as follows:
(1) by the thermal oxidation method layer of silicon dioxide layer (21) of on described monocrystalline silicon chip matrix (10) surface, growing;
Adopt Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method deposit one deck silicon nitride layer (22) on described silicon dioxide layer (21) surface again; Described silicon dioxide layer (21) and silicon nitride layer (22) constitute insulating barrier (2);
(2) on silicon nitride layer (22) surface of described insulating barrier (2), cover one deck cadmium or titanium resilient coating, and on described buffer-layer surface sputter one deck gold or platinum layer; Perhaps directly on silicon nitride layer (22) surface of described insulating barrier (2), cover layer of aluminum or copper metal layer;
(3) by photoetching/described metal level of ion etching method etching, it is right to prepare the pectinate electrodes that is made of first pectinate electrodes (11) and second pectinate electrodes (12); The right many nose of comb of described pectinate electrodes are staggered relatively;
(4) between the right many nose of comb of described pectinate electrodes, assemble one-dimensional nanometer semiconductor structure (13):
On first pectinate electrodes (11) of described comb-tooth-type electrode pair and second pectinate electrodes (12), apply a high-frequency ac voltage with a high frequency ac signal generator, this high-frequency ac voltage frequency 100kHz-200MHz, the peak-to-peak value scope is 1～30 volt;
The drips of solution that to take from the absolute alcohol solution that is suspended with the one dimension semiconductor nano material is added between the comb-tooth-type electrode pair, under the effect of high-frequency ac voltage, there is one or more one-dimensional nanometer semiconductor structure will be adsorbed between the right many nose of comb of described pectinate electrodes, thereby finishes the assembling of one-dimensional nanometer semiconductor structure (13);
Described one-dimensional nanometer semiconductor structure (13) is one dimension semiconductor nano belt, nano wire or the nanotube of zinc oxide, zinc nitride, gallium nitride or cadmium sulfide material.
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| CN101308108B (en) * | 2007-05-15 | 2011-06-29 | 清华大学 | Preparation method of sensor embodying one-dimensional nano material sensitive element |
| CN102270673A (en) * | 2011-07-22 | 2011-12-07 | 重庆科技学院 | Multirange photoelectric detector |
| CN102515841A (en) * | 2011-11-16 | 2012-06-27 | 华中科技大学 | Preparation method for gallium-filled silicon dioxide nanotube array and application thereof |
| CN102554254A (en) * | 2011-11-16 | 2012-07-11 | 华中科技大学 | Metal In (indium) filled MgO (magnesium oxide) nanotube, manufacturing method for same and application thereof |
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| CN102515841A (en) * | 2011-11-16 | 2012-06-27 | 华中科技大学 | Preparation method for gallium-filled silicon dioxide nanotube array and application thereof |
| CN102554254A (en) * | 2011-11-16 | 2012-07-11 | 华中科技大学 | Metal In (indium) filled MgO (magnesium oxide) nanotube, manufacturing method for same and application thereof |
| CN102515841B (en) * | 2011-11-16 | 2013-03-20 | 华中科技大学 | Preparation method for gallium-filled silicon dioxide nanotube array and application thereof |
| CN102554254B (en) * | 2011-11-16 | 2013-07-10 | 华中科技大学 | Metal In (indium) filled MgO (magnesium oxide) nanotube, manufacturing method for same and application thereof |
| CN102928588A (en) * | 2012-11-02 | 2013-02-13 | 江苏康宝电器有限公司 | TiO2 nanometer belt biosensor chip and system for detecting pathogenic escherichia coli rapidly |
| CN103928561A (en) * | 2013-12-23 | 2014-07-16 | 南昌大学 | Photoelectric response detector based on simple zinc oxide nanowire and manufacturing method |
| CN104779314B (en) * | 2014-06-27 | 2017-02-08 | 纳米新能源（唐山）有限责任公司 | Ultraviolet photosensitive sensor based on zinc oxide and preparation method of ultraviolet photosensitive sensor |
| WO2016131400A1 (en) * | 2015-02-16 | 2016-08-25 | 上海交通大学 | Highly sensitive nano photo-transistor and manufacturing method therefor, and photo-communication device and spectrum splitter device using same |
| CN107305913A (en) * | 2016-04-21 | 2017-10-31 | 纳智源科技（唐山）有限责任公司 | Ultraviolet light sensor, its preparation method, ultraviolet light-sensitive device and ultraviolet light detection method |
| CN107305913B (en) * | 2016-04-21 | 2019-09-10 | 纳智源科技（唐山）有限责任公司 | Ultraviolet photosensitive sensor, preparation method, ultraviolet light-sensitive device and ultraviolet light detection method |
| CN107785443A (en) * | 2016-08-26 | 2018-03-09 | 中国科学院金属研究所 | Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof |
| CN106252453A (en) * | 2016-09-13 | 2016-12-21 | 南昌大学 | Self energizing photodetectors based on the regulation and control of 1-dimention nano semicon-ductor structure surface state and preparation method |
| CN107389534A (en) * | 2017-07-07 | 2017-11-24 | 中国科学院理化技术研究所 | Single cell photoelectric detection system based on one-dimensional nanostructure probe |
| CN107389534B (en) * | 2017-07-07 | 2019-12-20 | 中国科学院理化技术研究所 | Single cell photoelectric detection system based on one-dimensional nanostructure probe |
| CN109524490A (en) * | 2018-09-12 | 2019-03-26 | 中国科学院半导体研究所 | ZnO/GaN heterojunction nano-wire photoswitch and preparation method thereof |
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