CN107785443A - Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof - Google Patents
Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof Download PDFInfo
- Publication number
- CN107785443A CN107785443A CN201610738835.6A CN201610738835A CN107785443A CN 107785443 A CN107785443 A CN 107785443A CN 201610738835 A CN201610738835 A CN 201610738835A CN 107785443 A CN107785443 A CN 107785443A
- Authority
- CN
- China
- Prior art keywords
- nano wire
- gan nano
- polar gan
- transparent flexible
- ultraviolet detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- -1 polypropylene Polymers 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 4
- 239000004800 polyvinyl chloride Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920006264 polyurethane film Polymers 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910002244 LaAlO3 Inorganic materials 0.000 claims description 2
- 229910010936 LiGaO2 Inorganic materials 0.000 claims description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract 1
- 230000001476 alcoholic effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to belong to field of semiconductor devices, and in particular to a kind of transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof, applied to UV detector structure and manufacturing technology.There are non-transparent flexible substrate, non-polar GaN nano wire, transparency electrode successively from bottom to top, transparency electrode is respectively overlay in the both ends of non-polar GaN nano wire, and forms Ohmic contact.First with the method for deposition in Grown non-polar GaN nano wire;Then single non-polar GaN nano wire is transferred on non-transparent flexible substrate;The method of photoetching is recycled to make electrode pattern by lithography;Transparency electrode finally is plated at non-polar GaN nano wire both ends, produces the ultraviolet detector.The present invention realizes the transparent flexible of ultraviolet detector, substantially increases the application field of ultraviolet detector.The transparent flexible ultraviolet light detector of the present invention is fast in ultraviolet light wave band response height, speed, and preparation technology is simple, and material environment friendly is reliable, and cost is low, is advantageous to extensive use.
Description
Technical field
The present invention relates to belong to field of semiconductor devices, and in particular to a kind of transparent flexible non-polar GaN nano wire is ultraviolet
Detector and preparation method thereof, applied to UV detector structure and manufacturing technology.
Background technology
Because ultraviolet detector can be used for prediction and alarm, the fire of detection, the environmental pollution of ozone layer ultraviolet
Detection and prevention, the detection and improvement of plant gas, the sustainable development of protection and the mankind to environment play an important role,
Ultraviolet detection technology and the demand of device are also growing.Countries in the world are all classified as ultraviolet detection technology at the emphasis of research and development
Problem.U.S. Department of Defense just had been started up Wide Bandgap Semiconductor Technology innovation plan (WBSTI) early in 2001, and emphasis solves material
Expect quality and device fabrication techniques problem, promote the progress of such devices engineering application.By contrast, China is to broad stopband half
The research of conductor material and device is started late, at present also in inferior position.
Because non-polar GaN base device can eliminate built in field caused by polarity effect, electron hole is overcome to be spatially separating
The problem of, the luminous efficiency of device is improved, stabilized illumination wavelength, reduces cut-in voltage.From 2000, nonpolar device obtained prominent
Since broken, non-polar GaN sill and device become current study hotspot.However, it is stranded because prepared by non-polar GaN nano wire
Difficulty, it yet there are no preparation and technique of the someone to non-polar GaN nano wire UV photodetector and carried out report.In addition,
Although GaN is of great interest in ultraviolet photoelectric detection technical elements, photodetector is integrated in wearable
Or Foldable on also in the exploratory stage.Want to prepare high-performance, flexibility, transparent ultraviolet detector, not only will be to non-
The optically and electrically characteristic of polar nano material is furtherd investigate, will also be to the shifting process and transparency electrode of single nano-wire
Preparation technology is constantly groped.Transparent flexible non-polar GaN nano wire UV photodetector is that one kind has application very much
The ultraviolet detector of prospect, grasps the preparation method of its material and the technique of device assembling will be helpful to us and further improve
Performance and developing application field, promote the fast development of related industry.
The content of the invention
It is an object of the invention to provide a kind of transparent flexible non-polar GaN nano wire ultraviolet detector and its preparation side
Method, to improve the performance of ultraviolet detector and application.
In order to achieve the above object, the technical solution adopted by the present invention is:
A kind of transparent flexible non-polar GaN nano wire ultraviolet detector, there is non-transparent flexible substrate, non-pole successively from bottom to top
Property GaN nano wire, transparency electrode, transparency electrode is respectively overlay in the both ends of non-polar GaN nano wire, and forms Ohmic contact.
Described transparent flexible non-polar GaN nano wire ultraviolet detector, non-transparent flexible substrate are polyvinyl chloride film, gathered
Polypropylene film, polyethylene film, polyurethane film or polydimethylsiloxane film, thickness are 500 nanometers to 1 millimeter.
Described transparent flexible non-polar GaN nano wire ultraviolet detector, non-polar GaN nano wire is along GaN crystal
M faces or a look unfamiliar length, a diameter of 50 nanometers to 900 nanometers of non-polar GaN nano wire, the length of non-polar GaN nano wire
For 1 micron to 1 millimeter.
Described transparent flexible non-polar GaN nano wire ultraviolet detector, transparency electrode is tin indium oxide ITO or fluorine doped
Tin oxide FTO, the thickness of transparency electrode is 100 nanometers.
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, comprises the following steps:
1) substrate is cleaned by ultrasonic with acetone, absolute ethyl alcohol and deionized water successively, dried up with nitrogen, it is standby;
2) using the method for deposition, non-polar GaN nano wire is prepared on substrate;
3) method peeled off using physics is stripped down non-polar GaN nano wire from substrate;
4) the non-polar GaN nano wire stripped down is distributed in solution, and ultrasonic vibration;
5) solution after will be scattered is dripped on non-transparent flexible substrate;
6) electrode pattern is etched at single non-polar GaN nano wire both ends using the method for photoetching;
7) transparency electrode is plated at non-polar GaN nano wire both ends using film deposition techniques;
8) spend glue and remove photoresist.
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, the method for step 2) deposition are:
Metal-organic chemical vapor deposition equipment MOCVD, hydride vapor phase epitaxy HVPE or ald ALD or chemical vapor deposition
CVD。
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, step 1), 2), 3) substrate is
(1-102) sapphire, (11-20) sapphire, (100) LaAlO3、(302)LiAlO2, (10-10) sapphire, (001) MgO,
(100)LiGaO2Or (100) LiAlO2。
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, step 4) solution be alcohol or
Person's acetone.
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, step 6) electrode pattern are square
Shape or polygon.
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, step 7) film deposition techniques
For magnetron sputtering, chemical vapor deposition or thermal evaporation.
Advantages of the present invention and beneficial effect are:
1st, not only optical responsivity is not high enough for traditional GaN ultraviolet detectors, and opaque and inflexibility, and this is limited significantly
Application of the ultraviolet detector in terms of the military and people's livelihood.The transparent flexible non-polar GaN nano wire ultraviolet detector of the present invention
Can effectively solve the problems, such as that conventional detectors are faced.So huge economic benefit will be created in actual applications.
2nd, the present invention realizes the transparent flexible of ultraviolet detector, substantially increases the application field of ultraviolet detector.
3rd, transparent flexible ultraviolet light detector of the invention is fast in ultraviolet light wave band response height, speed, and preparation technology is simple,
Material environment friendly is reliable, and cost is low, is advantageous to extensive use.
Brief description of the drawings
To further appreciate that structure, feature and its purpose of the present invention, below in conjunction with accompanying drawing and preferred embodiment
Describe in detail as after, wherein:
Fig. 1 is the cross section structure schematic diagram of transparent flexible non-polar GaN nano wire ultraviolet detector;
Fig. 2 is the overlooking the structure diagram of transparent flexible non-polar GaN nano wire ultraviolet detector.
In figure, 1, non-transparent flexible substrate;2nd, non-polar GaN nano wire;3rd, transparency electrode.
Embodiment:
As Figure 1-Figure 2, transparent flexible non-polar GaN nano wire ultraviolet detector of the present invention, including:One transparent flexible
Substrate 1, a non-polar GaN nano wire 2, a transparency electrode 3, have non-transparent flexible substrate 1, non-polar GaN to receive successively from bottom to top
Rice noodles 2, transparency electrode 3, transparency electrode is respectively overlay in the both ends of non-polar GaN nano wire 2, and forms Ohmic contact.
Wherein, non-transparent flexible substrate 1 is polyvinyl chloride film, polypropylene film, polyethylene film, polyurethane film or poly-
Dimethylsilane film, thickness are 500 nanometers to 1 millimeter.Non-polar GaN nano wire 2 is the m faces or a faces along GaN crystal
Growth, a diameter of 50 nanometers to 900 nanometers of non-polar GaN nano wire, length is 1 micron to 1 millimeter.Transparency electrode 3 is oxygen
Change indium tin (ITO) or the tin oxide (FTO) of fluorine doped, thickness is 100 nanometers.
Below, the present invention is further elaborated on by embodiment.
Embodiment 1
As Figure 1-Figure 2, in the present embodiment transparent flexible non-polar GaN nano wire ultraviolet detector preparation method,
Comprise the following steps that:
1) substrate is cleaned by ultrasonic with acetone, absolute ethyl alcohol and deionized water successively, dried up with nitrogen, it is standby;
2) method for using metal-organic chemical vapor deposition equipment (MOCVD), is prepared along m in m surface sapphire substrates
The non-polar GaN nano wire 2 for looking unfamiliar long;
3) method peeled off using physics is stripped down m faces non-polar GaN nano wire 2 from m surface sapphire substrates;
4) the m faces non-polar GaN nano wire 2 stripped down is distributed in alcoholic solution, and ultrasonic vibration;
5) alcoholic solution after will be scattered is dripped on polyvinyl chloride film non-transparent flexible substrate 1;
6) simple rectangular electrode patterns are etched at the single both ends of m faces non-polar GaN nano wire 2 using the method for photoetching;
7) ITO for sputtering one layer of 100 nanometer thickness at m faces non-polar GaN nano wire both ends using the method for magnetron sputtering is saturating
Prescribed electrode 3;
8) spend glue and remove photoresist, obtain resulting devices.
Embodiment 2
As Figure 1-Figure 2, in the present embodiment transparent flexible non-polar GaN nano wire ultraviolet detector preparation method,
Comprise the following steps that:
1) substrate is cleaned by ultrasonic with acetone, absolute ethyl alcohol and deionized water successively, dried up with nitrogen, it is standby;
2) method for using hydride vapor phase epitaxy (HVPE), in (302) LiAlO2A diameter of 500 are prepared on substrate to receive
Rice, length is 20 microns and the non-polar GaN nano wire 2 for looking unfamiliar long along a;
3) using the method that physics is peeled off by a faces non-polar GaN nano wire 2 from (302) LiAlO2Stripped down on substrate;
4) a faces non-polar GaN nano wire 2 stripped down is distributed in alcoholic solution, and ultrasonic vibration;
5) alcoholic solution after will be scattered is dripped on polypropylene film non-transparent flexible substrate 1;
6) simple rectangular electrode patterns are etched at the single both ends of a faces non-polar GaN nano wire 2 using the method for photoetching;
7) it is transparent in the FTO of the m faces non-polar GaN nano wire both ends plating nanometer thickness of last layer 100 using the method for thermal evaporation
Electrode 3;
8) spend glue and remove photoresist, obtain resulting devices.
It is described above, it is only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, and is appointed
What be familiar with the people of the technology disclosed herein technical scope in, the conversion or replacement that can readily occur in, should all cover
In the scope of the present invention.Therefore, protection scope of the present invention should be defined by the protection domain of claims.
Claims (10)
1. a kind of transparent flexible non-polar GaN nano wire ultraviolet detector, it is characterised in that have transparent flexible successively from bottom to top
Substrate, non-polar GaN nano wire, transparency electrode, transparency electrode is respectively overlay in the both ends of non-polar GaN nano wire, and is formed
Ohmic contact.
2. transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 1, it is characterised in that transparent soft
Property substrate is polyvinyl chloride film, polypropylene film, polyethylene film, polyurethane film or polydimethylsiloxane film, thickness
For 500 nanometers to 1 millimeter.
3. transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 1, it is characterised in that nonpolar
GaN nano wire is looked unfamiliar length along the m faces of GaN crystal or a, and a diameter of 50 nanometers to 900 of non-polar GaN nano wire are received
Rice, the length of non-polar GaN nano wire is 1 micron to 1 millimeter.
4. transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 1, it is characterised in that transparent electricity
Pole is the tin indium oxide ITO or tin oxide FTO of fluorine doped, and the thickness of transparency electrode is 100 nanometers.
5. a kind of preparation method of the transparent flexible non-polar GaN nano wire ultraviolet detector described in claim 1, its feature exist
In comprising the following steps:
1) substrate is cleaned by ultrasonic with acetone, absolute ethyl alcohol and deionized water successively, dried up with nitrogen, it is standby;
2) using the method for deposition, non-polar GaN nano wire is prepared on substrate;
3) method peeled off using physics is stripped down non-polar GaN nano wire from substrate;
4) the non-polar GaN nano wire stripped down is distributed in solution, and ultrasonic vibration;
5) solution after will be scattered is dripped on non-transparent flexible substrate;
6) electrode pattern is etched at single non-polar GaN nano wire both ends using the method for photoetching;
7) transparency electrode is plated at non-polar GaN nano wire both ends using film deposition techniques;
8) spend glue and remove photoresist.
6. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature exist
In the method for step 2) deposition is:Metal-organic chemical vapor deposition equipment MOCVD, hydride vapor phase epitaxy HVPE or atomic layer
Deposit ALD or chemical vapor deposition CVD.
7. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature exist
In step 1), 2), 3) substrate is (1-102) sapphire, (11-20) sapphire, (100) LaAlO3、(302)LiAlO2、(10-
10) sapphire, (001) MgO, (100) LiGaO2Or (100) LiAlO2。
8. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature exist
In step 4) solution is alcohol or acetone.
9. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature exist
In step 6) electrode pattern is rectangle or polygon.
10. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature
It is, step 7) film deposition techniques are magnetron sputtering, chemical vapor deposition or thermal evaporation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610738835.6A CN107785443A (en) | 2016-08-26 | 2016-08-26 | Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610738835.6A CN107785443A (en) | 2016-08-26 | 2016-08-26 | Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107785443A true CN107785443A (en) | 2018-03-09 |
Family
ID=61440129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610738835.6A Pending CN107785443A (en) | 2016-08-26 | 2016-08-26 | Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107785443A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111029419A (en) * | 2019-12-26 | 2020-04-17 | 东莞东阳光科研发有限公司 | Full-transparent flexible ultraviolet light response switch and preparation method thereof |
CN111509062A (en) * | 2020-04-29 | 2020-08-07 | 华南师范大学 | Micrometer-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure and preparation method thereof |
CN111969075A (en) * | 2020-07-15 | 2020-11-20 | 中国科学院金属研究所 | A wide spectral response GaN: ZnO solid solution nanowire photoelectric detector and preparation method thereof |
CN111994866A (en) * | 2020-09-08 | 2020-11-27 | 中国石油大学(华东) | Bending strain enhanced ultraviolet photoelectric position sensor and preparation method thereof |
CN116519175A (en) * | 2023-07-03 | 2023-08-01 | 南京邮电大学 | Flexible device for growing GaN-based nanowires based on Si substrate and preparation method |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005085809A1 (en) * | 2004-03-08 | 2005-09-15 | Korea Institute Of Science And Technology | Nanowire light sensor and kit with the same |
CN1805156A (en) * | 2006-01-13 | 2006-07-19 | 清华大学 | One-dimensional nanometer semiconductor structure based photoelectric sensor and its manufacturing method |
CN101689610A (en) * | 2007-07-02 | 2010-03-31 | 朗讯科技公司 | The photodetector of deflection |
CN102185034A (en) * | 2011-04-21 | 2011-09-14 | 河南大学 | Method for manufacturing single ZnO nanowire schottky barrier ultraviolet detector |
CN104300028A (en) * | 2014-08-08 | 2015-01-21 | 浙江大学 | Ultraviolet avalanche photodetector taking fluorinated graphene as absorbing layer and preparation method |
US20150129743A1 (en) * | 2013-11-12 | 2015-05-14 | The Board Of Trustees Of The University Of Alabama | Pillar array photo detector |
CN104952976A (en) * | 2015-05-13 | 2015-09-30 | 宁波工程学院 | Production method of single-crystal silicon carbide nanowire high-sensitivity purple-light photoelectric detector |
CN105206689A (en) * | 2015-09-18 | 2015-12-30 | 中国科学院上海微系统与信息技术研究所 | Photoelectric detector preparation method based on thin-film semiconductor-graphene heterojunction |
CN105304729A (en) * | 2015-09-08 | 2016-02-03 | 安阳师范学院 | Flexible optoelectronic device based on graphene and II-VI group semiconductor axial p-n junction nanowire array and preparation method thereof |
CN105489693A (en) * | 2015-12-31 | 2016-04-13 | 南京大学 | Two-dimensional layered thin-film material-based p-g-n heterojunction photoelectronic device |
CN105590985A (en) * | 2015-12-31 | 2016-05-18 | 南京大学 | Optoelectronic device based on two-dimensional layered material p-i-n heterojunction |
CN105633220A (en) * | 2016-04-01 | 2016-06-01 | 西南大学 | All printing photoelectric detector on the basis of flexible substrate and preparation method thereof |
-
2016
- 2016-08-26 CN CN201610738835.6A patent/CN107785443A/en active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005085809A1 (en) * | 2004-03-08 | 2005-09-15 | Korea Institute Of Science And Technology | Nanowire light sensor and kit with the same |
CN1805156A (en) * | 2006-01-13 | 2006-07-19 | 清华大学 | One-dimensional nanometer semiconductor structure based photoelectric sensor and its manufacturing method |
CN101689610A (en) * | 2007-07-02 | 2010-03-31 | 朗讯科技公司 | The photodetector of deflection |
CN102185034A (en) * | 2011-04-21 | 2011-09-14 | 河南大学 | Method for manufacturing single ZnO nanowire schottky barrier ultraviolet detector |
US20150129743A1 (en) * | 2013-11-12 | 2015-05-14 | The Board Of Trustees Of The University Of Alabama | Pillar array photo detector |
CN104300028A (en) * | 2014-08-08 | 2015-01-21 | 浙江大学 | Ultraviolet avalanche photodetector taking fluorinated graphene as absorbing layer and preparation method |
CN104952976A (en) * | 2015-05-13 | 2015-09-30 | 宁波工程学院 | Production method of single-crystal silicon carbide nanowire high-sensitivity purple-light photoelectric detector |
CN105304729A (en) * | 2015-09-08 | 2016-02-03 | 安阳师范学院 | Flexible optoelectronic device based on graphene and II-VI group semiconductor axial p-n junction nanowire array and preparation method thereof |
CN105206689A (en) * | 2015-09-18 | 2015-12-30 | 中国科学院上海微系统与信息技术研究所 | Photoelectric detector preparation method based on thin-film semiconductor-graphene heterojunction |
CN105489693A (en) * | 2015-12-31 | 2016-04-13 | 南京大学 | Two-dimensional layered thin-film material-based p-g-n heterojunction photoelectronic device |
CN105590985A (en) * | 2015-12-31 | 2016-05-18 | 南京大学 | Optoelectronic device based on two-dimensional layered material p-i-n heterojunction |
CN105633220A (en) * | 2016-04-01 | 2016-06-01 | 西南大学 | All printing photoelectric detector on the basis of flexible substrate and preparation method thereof |
Non-Patent Citations (6)
Title |
---|
A. V. BABICHEV: ""GaN nanowire ultraviolet photodetector with a graphene transparent contact"", 《APPL. PHYS. LETT.》 * |
ABHISHEK MOTAYED: ""Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique"", 《JOURNAL OF APPLIED PHYSICS》 * |
LINBAO LUO: ""Transparent and flexible selenium nanobelt-based visible light photodetector"", 《CRYENGCOMM》 * |
MINGZENG PENG: ""Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio"", 《ACS NANO》 * |
RAFFAELLA CALARCO: ""Size-dependent photoconductivity in MBE-growth GaN-nanowires"", 《NANO LETTERS》 * |
REUI-SAN CHEN: ""Ultrahigh photocurrent gain in m-axial GaN nanowires"", 《APPLIED PHYSICS LETTERS》 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111029419A (en) * | 2019-12-26 | 2020-04-17 | 东莞东阳光科研发有限公司 | Full-transparent flexible ultraviolet light response switch and preparation method thereof |
CN111029419B (en) * | 2019-12-26 | 2021-08-31 | 东莞东阳光科研发有限公司 | Full-transparent flexible ultraviolet light response switch and preparation method thereof |
CN111509062A (en) * | 2020-04-29 | 2020-08-07 | 华南师范大学 | Micrometer-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure and preparation method thereof |
CN111969075A (en) * | 2020-07-15 | 2020-11-20 | 中国科学院金属研究所 | A wide spectral response GaN: ZnO solid solution nanowire photoelectric detector and preparation method thereof |
CN111969075B (en) * | 2020-07-15 | 2024-03-08 | 中国科学院金属研究所 | Broad spectrum response GaN: znO solid solution nanowire photoelectric detector and preparation method thereof |
CN111994866A (en) * | 2020-09-08 | 2020-11-27 | 中国石油大学(华东) | Bending strain enhanced ultraviolet photoelectric position sensor and preparation method thereof |
CN116519175A (en) * | 2023-07-03 | 2023-08-01 | 南京邮电大学 | Flexible device for growing GaN-based nanowires based on Si substrate and preparation method |
CN116519175B (en) * | 2023-07-03 | 2023-11-10 | 南京邮电大学 | Flexible device for growing GaN-based nanowires based on Si substrate and preparation method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107785443A (en) | Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof | |
Rana et al. | Multilayer MgZnO/ZnO thin films for UV photodetectors | |
de Melo et al. | Semi-transparent p-Cu2O/n-ZnO nanoscale-film heterojunctions for photodetection and photovoltaic applications | |
CN106571405B (en) | A kind of ultraviolet detector with GaN nano wire array and preparation method thereof | |
CN101853894B (en) | Nanowire heterojunction array-base ultraviolet light detector and preparation method thereof | |
CN108010996B (en) | A kind of AlGaInP light emitting diode and preparation method thereof | |
US11158763B2 (en) | Integration of III-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices | |
CN104505406B (en) | A kind of GaAs two-side film membranes solar cell | |
CN101488551B (en) | Production method for GaN based LED | |
Sarkar et al. | Enhanced UV–visible photodetection characteristics of a flexible Si membrane-ZnO heterojunction utilizing piezo-phototronic effect | |
Hu et al. | Recent progress in piezo-phototronics with extended materials, application areas and understanding | |
Yin et al. | Enhanced performance of UV photodetector based on ZnO nanorod arrays via TiO2 as electrons trap layer | |
Cai et al. | GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectors | |
Hu et al. | Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD | |
CN102651438A (en) | Substrate, preparation method thereof and chip with substrate | |
CN107863432A (en) | A kind of the LED preparation methods and LED chip of lifting LED performances | |
CN201638834U (en) | Nanowire heterojunction array based ultraviolet light detector | |
CN107731971B (en) | Vertical structure LED chip based on photonic crystal and preparation method thereof | |
CN105470318A (en) | Germanium-silicon photoelectric detector and manufacturing method therefor | |
Liu et al. | Hybrid silicon honeycomb/organic solar cells with enhanced efficiency using surface etching | |
CN107394023A (en) | A kind of preparation method of crystallized nano structure zinc oxide transparent conductive film | |
CN208000918U (en) | Fexible film GaN base nano-pillar LED array micro-display device | |
CN208444854U (en) | A kind of chip epitaxial structure of low-resistance LED | |
Kang et al. | Broadband light-absorption InGaN photoanode assisted by imprint patterning and ZnO nanowire growth for energy conversion | |
Zhao et al. | Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180309 |
|
RJ01 | Rejection of invention patent application after publication |