CN107785443A - Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof - Google Patents

Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof Download PDF

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Publication number
CN107785443A
CN107785443A CN201610738835.6A CN201610738835A CN107785443A CN 107785443 A CN107785443 A CN 107785443A CN 201610738835 A CN201610738835 A CN 201610738835A CN 107785443 A CN107785443 A CN 107785443A
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nano wire
gan nano
polar gan
transparent flexible
ultraviolet detector
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姜辛
刘宝丹
张兴来
刘鲁生
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Institute of Metal Research of CAS
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Institute of Metal Research of CAS
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relates to belong to field of semiconductor devices, and in particular to a kind of transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof, applied to UV detector structure and manufacturing technology.There are non-transparent flexible substrate, non-polar GaN nano wire, transparency electrode successively from bottom to top, transparency electrode is respectively overlay in the both ends of non-polar GaN nano wire, and forms Ohmic contact.First with the method for deposition in Grown non-polar GaN nano wire;Then single non-polar GaN nano wire is transferred on non-transparent flexible substrate;The method of photoetching is recycled to make electrode pattern by lithography;Transparency electrode finally is plated at non-polar GaN nano wire both ends, produces the ultraviolet detector.The present invention realizes the transparent flexible of ultraviolet detector, substantially increases the application field of ultraviolet detector.The transparent flexible ultraviolet light detector of the present invention is fast in ultraviolet light wave band response height, speed, and preparation technology is simple, and material environment friendly is reliable, and cost is low, is advantageous to extensive use.

Description

Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof
Technical field
The present invention relates to belong to field of semiconductor devices, and in particular to a kind of transparent flexible non-polar GaN nano wire is ultraviolet Detector and preparation method thereof, applied to UV detector structure and manufacturing technology.
Background technology
Because ultraviolet detector can be used for prediction and alarm, the fire of detection, the environmental pollution of ozone layer ultraviolet Detection and prevention, the detection and improvement of plant gas, the sustainable development of protection and the mankind to environment play an important role, Ultraviolet detection technology and the demand of device are also growing.Countries in the world are all classified as ultraviolet detection technology at the emphasis of research and development Problem.U.S. Department of Defense just had been started up Wide Bandgap Semiconductor Technology innovation plan (WBSTI) early in 2001, and emphasis solves material Expect quality and device fabrication techniques problem, promote the progress of such devices engineering application.By contrast, China is to broad stopband half The research of conductor material and device is started late, at present also in inferior position.
Because non-polar GaN base device can eliminate built in field caused by polarity effect, electron hole is overcome to be spatially separating The problem of, the luminous efficiency of device is improved, stabilized illumination wavelength, reduces cut-in voltage.From 2000, nonpolar device obtained prominent Since broken, non-polar GaN sill and device become current study hotspot.However, it is stranded because prepared by non-polar GaN nano wire Difficulty, it yet there are no preparation and technique of the someone to non-polar GaN nano wire UV photodetector and carried out report.In addition, Although GaN is of great interest in ultraviolet photoelectric detection technical elements, photodetector is integrated in wearable Or Foldable on also in the exploratory stage.Want to prepare high-performance, flexibility, transparent ultraviolet detector, not only will be to non- The optically and electrically characteristic of polar nano material is furtherd investigate, will also be to the shifting process and transparency electrode of single nano-wire Preparation technology is constantly groped.Transparent flexible non-polar GaN nano wire UV photodetector is that one kind has application very much The ultraviolet detector of prospect, grasps the preparation method of its material and the technique of device assembling will be helpful to us and further improve Performance and developing application field, promote the fast development of related industry.
The content of the invention
It is an object of the invention to provide a kind of transparent flexible non-polar GaN nano wire ultraviolet detector and its preparation side Method, to improve the performance of ultraviolet detector and application.
In order to achieve the above object, the technical solution adopted by the present invention is:
A kind of transparent flexible non-polar GaN nano wire ultraviolet detector, there is non-transparent flexible substrate, non-pole successively from bottom to top Property GaN nano wire, transparency electrode, transparency electrode is respectively overlay in the both ends of non-polar GaN nano wire, and forms Ohmic contact.
Described transparent flexible non-polar GaN nano wire ultraviolet detector, non-transparent flexible substrate are polyvinyl chloride film, gathered Polypropylene film, polyethylene film, polyurethane film or polydimethylsiloxane film, thickness are 500 nanometers to 1 millimeter.
Described transparent flexible non-polar GaN nano wire ultraviolet detector, non-polar GaN nano wire is along GaN crystal M faces or a look unfamiliar length, a diameter of 50 nanometers to 900 nanometers of non-polar GaN nano wire, the length of non-polar GaN nano wire For 1 micron to 1 millimeter.
Described transparent flexible non-polar GaN nano wire ultraviolet detector, transparency electrode is tin indium oxide ITO or fluorine doped Tin oxide FTO, the thickness of transparency electrode is 100 nanometers.
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, comprises the following steps:
1) substrate is cleaned by ultrasonic with acetone, absolute ethyl alcohol and deionized water successively, dried up with nitrogen, it is standby;
2) using the method for deposition, non-polar GaN nano wire is prepared on substrate;
3) method peeled off using physics is stripped down non-polar GaN nano wire from substrate;
4) the non-polar GaN nano wire stripped down is distributed in solution, and ultrasonic vibration;
5) solution after will be scattered is dripped on non-transparent flexible substrate;
6) electrode pattern is etched at single non-polar GaN nano wire both ends using the method for photoetching;
7) transparency electrode is plated at non-polar GaN nano wire both ends using film deposition techniques;
8) spend glue and remove photoresist.
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, the method for step 2) deposition are: Metal-organic chemical vapor deposition equipment MOCVD, hydride vapor phase epitaxy HVPE or ald ALD or chemical vapor deposition CVD。
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, step 1), 2), 3) substrate is (1-102) sapphire, (11-20) sapphire, (100) LaAlO3、(302)LiAlO2, (10-10) sapphire, (001) MgO, (100)LiGaO2Or (100) LiAlO2
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, step 4) solution be alcohol or Person's acetone.
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, step 6) electrode pattern are square Shape or polygon.
The preparation method of described transparent flexible non-polar GaN nano wire ultraviolet detector, step 7) film deposition techniques For magnetron sputtering, chemical vapor deposition or thermal evaporation.
Advantages of the present invention and beneficial effect are:
1st, not only optical responsivity is not high enough for traditional GaN ultraviolet detectors, and opaque and inflexibility, and this is limited significantly Application of the ultraviolet detector in terms of the military and people's livelihood.The transparent flexible non-polar GaN nano wire ultraviolet detector of the present invention Can effectively solve the problems, such as that conventional detectors are faced.So huge economic benefit will be created in actual applications.
2nd, the present invention realizes the transparent flexible of ultraviolet detector, substantially increases the application field of ultraviolet detector.
3rd, transparent flexible ultraviolet light detector of the invention is fast in ultraviolet light wave band response height, speed, and preparation technology is simple, Material environment friendly is reliable, and cost is low, is advantageous to extensive use.
Brief description of the drawings
To further appreciate that structure, feature and its purpose of the present invention, below in conjunction with accompanying drawing and preferred embodiment Describe in detail as after, wherein:
Fig. 1 is the cross section structure schematic diagram of transparent flexible non-polar GaN nano wire ultraviolet detector;
Fig. 2 is the overlooking the structure diagram of transparent flexible non-polar GaN nano wire ultraviolet detector.
In figure, 1, non-transparent flexible substrate;2nd, non-polar GaN nano wire;3rd, transparency electrode.
Embodiment:
As Figure 1-Figure 2, transparent flexible non-polar GaN nano wire ultraviolet detector of the present invention, including:One transparent flexible Substrate 1, a non-polar GaN nano wire 2, a transparency electrode 3, have non-transparent flexible substrate 1, non-polar GaN to receive successively from bottom to top Rice noodles 2, transparency electrode 3, transparency electrode is respectively overlay in the both ends of non-polar GaN nano wire 2, and forms Ohmic contact.
Wherein, non-transparent flexible substrate 1 is polyvinyl chloride film, polypropylene film, polyethylene film, polyurethane film or poly- Dimethylsilane film, thickness are 500 nanometers to 1 millimeter.Non-polar GaN nano wire 2 is the m faces or a faces along GaN crystal Growth, a diameter of 50 nanometers to 900 nanometers of non-polar GaN nano wire, length is 1 micron to 1 millimeter.Transparency electrode 3 is oxygen Change indium tin (ITO) or the tin oxide (FTO) of fluorine doped, thickness is 100 nanometers.
Below, the present invention is further elaborated on by embodiment.
Embodiment 1
As Figure 1-Figure 2, in the present embodiment transparent flexible non-polar GaN nano wire ultraviolet detector preparation method, Comprise the following steps that:
1) substrate is cleaned by ultrasonic with acetone, absolute ethyl alcohol and deionized water successively, dried up with nitrogen, it is standby;
2) method for using metal-organic chemical vapor deposition equipment (MOCVD), is prepared along m in m surface sapphire substrates The non-polar GaN nano wire 2 for looking unfamiliar long;
3) method peeled off using physics is stripped down m faces non-polar GaN nano wire 2 from m surface sapphire substrates;
4) the m faces non-polar GaN nano wire 2 stripped down is distributed in alcoholic solution, and ultrasonic vibration;
5) alcoholic solution after will be scattered is dripped on polyvinyl chloride film non-transparent flexible substrate 1;
6) simple rectangular electrode patterns are etched at the single both ends of m faces non-polar GaN nano wire 2 using the method for photoetching;
7) ITO for sputtering one layer of 100 nanometer thickness at m faces non-polar GaN nano wire both ends using the method for magnetron sputtering is saturating Prescribed electrode 3;
8) spend glue and remove photoresist, obtain resulting devices.
Embodiment 2
As Figure 1-Figure 2, in the present embodiment transparent flexible non-polar GaN nano wire ultraviolet detector preparation method, Comprise the following steps that:
1) substrate is cleaned by ultrasonic with acetone, absolute ethyl alcohol and deionized water successively, dried up with nitrogen, it is standby;
2) method for using hydride vapor phase epitaxy (HVPE), in (302) LiAlO2A diameter of 500 are prepared on substrate to receive Rice, length is 20 microns and the non-polar GaN nano wire 2 for looking unfamiliar long along a;
3) using the method that physics is peeled off by a faces non-polar GaN nano wire 2 from (302) LiAlO2Stripped down on substrate;
4) a faces non-polar GaN nano wire 2 stripped down is distributed in alcoholic solution, and ultrasonic vibration;
5) alcoholic solution after will be scattered is dripped on polypropylene film non-transparent flexible substrate 1;
6) simple rectangular electrode patterns are etched at the single both ends of a faces non-polar GaN nano wire 2 using the method for photoetching;
7) it is transparent in the FTO of the m faces non-polar GaN nano wire both ends plating nanometer thickness of last layer 100 using the method for thermal evaporation Electrode 3;
8) spend glue and remove photoresist, obtain resulting devices.
It is described above, it is only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, and is appointed What be familiar with the people of the technology disclosed herein technical scope in, the conversion or replacement that can readily occur in, should all cover In the scope of the present invention.Therefore, protection scope of the present invention should be defined by the protection domain of claims.

Claims (10)

1. a kind of transparent flexible non-polar GaN nano wire ultraviolet detector, it is characterised in that have transparent flexible successively from bottom to top Substrate, non-polar GaN nano wire, transparency electrode, transparency electrode is respectively overlay in the both ends of non-polar GaN nano wire, and is formed Ohmic contact.
2. transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 1, it is characterised in that transparent soft Property substrate is polyvinyl chloride film, polypropylene film, polyethylene film, polyurethane film or polydimethylsiloxane film, thickness For 500 nanometers to 1 millimeter.
3. transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 1, it is characterised in that nonpolar GaN nano wire is looked unfamiliar length along the m faces of GaN crystal or a, and a diameter of 50 nanometers to 900 of non-polar GaN nano wire are received Rice, the length of non-polar GaN nano wire is 1 micron to 1 millimeter.
4. transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 1, it is characterised in that transparent electricity Pole is the tin indium oxide ITO or tin oxide FTO of fluorine doped, and the thickness of transparency electrode is 100 nanometers.
5. a kind of preparation method of the transparent flexible non-polar GaN nano wire ultraviolet detector described in claim 1, its feature exist In comprising the following steps:
1) substrate is cleaned by ultrasonic with acetone, absolute ethyl alcohol and deionized water successively, dried up with nitrogen, it is standby;
2) using the method for deposition, non-polar GaN nano wire is prepared on substrate;
3) method peeled off using physics is stripped down non-polar GaN nano wire from substrate;
4) the non-polar GaN nano wire stripped down is distributed in solution, and ultrasonic vibration;
5) solution after will be scattered is dripped on non-transparent flexible substrate;
6) electrode pattern is etched at single non-polar GaN nano wire both ends using the method for photoetching;
7) transparency electrode is plated at non-polar GaN nano wire both ends using film deposition techniques;
8) spend glue and remove photoresist.
6. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature exist In the method for step 2) deposition is:Metal-organic chemical vapor deposition equipment MOCVD, hydride vapor phase epitaxy HVPE or atomic layer Deposit ALD or chemical vapor deposition CVD.
7. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature exist In step 1), 2), 3) substrate is (1-102) sapphire, (11-20) sapphire, (100) LaAlO3、(302)LiAlO2、(10- 10) sapphire, (001) MgO, (100) LiGaO2Or (100) LiAlO2
8. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature exist In step 4) solution is alcohol or acetone.
9. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature exist In step 6) electrode pattern is rectangle or polygon.
10. the preparation method of transparent flexible non-polar GaN nano wire ultraviolet detector according to claim 5, its feature It is, step 7) film deposition techniques are magnetron sputtering, chemical vapor deposition or thermal evaporation.
CN201610738835.6A 2016-08-26 2016-08-26 Transparent flexible non-polar GaN nano wire ultraviolet detector and preparation method thereof Pending CN107785443A (en)

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CN111029419A (en) * 2019-12-26 2020-04-17 东莞东阳光科研发有限公司 Full-transparent flexible ultraviolet light response switch and preparation method thereof
CN111509062A (en) * 2020-04-29 2020-08-07 华南师范大学 Micrometer-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure and preparation method thereof
CN111969075A (en) * 2020-07-15 2020-11-20 中国科学院金属研究所 A wide spectral response GaN: ZnO solid solution nanowire photoelectric detector and preparation method thereof
CN111994866A (en) * 2020-09-08 2020-11-27 中国石油大学(华东) Bending strain enhanced ultraviolet photoelectric position sensor and preparation method thereof
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CN111029419A (en) * 2019-12-26 2020-04-17 东莞东阳光科研发有限公司 Full-transparent flexible ultraviolet light response switch and preparation method thereof
CN111029419B (en) * 2019-12-26 2021-08-31 东莞东阳光科研发有限公司 Full-transparent flexible ultraviolet light response switch and preparation method thereof
CN111509062A (en) * 2020-04-29 2020-08-07 华南师范大学 Micrometer-line ultraviolet light detection device based on gallium nitride-aluminum nitride core-shell structure and preparation method thereof
CN111969075A (en) * 2020-07-15 2020-11-20 中国科学院金属研究所 A wide spectral response GaN: ZnO solid solution nanowire photoelectric detector and preparation method thereof
CN111969075B (en) * 2020-07-15 2024-03-08 中国科学院金属研究所 Broad spectrum response GaN: znO solid solution nanowire photoelectric detector and preparation method thereof
CN111994866A (en) * 2020-09-08 2020-11-27 中国石油大学(华东) Bending strain enhanced ultraviolet photoelectric position sensor and preparation method thereof
CN116519175A (en) * 2023-07-03 2023-08-01 南京邮电大学 Flexible device for growing GaN-based nanowires based on Si substrate and preparation method
CN116519175B (en) * 2023-07-03 2023-11-10 南京邮电大学 Flexible device for growing GaN-based nanowires based on Si substrate and preparation method

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