CN1833999A - Method for manufacturing micron/nanometer combined structure device - Google Patents
Method for manufacturing micron/nanometer combined structure device Download PDFInfo
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- CN1833999A CN1833999A CN 200510053865 CN200510053865A CN1833999A CN 1833999 A CN1833999 A CN 1833999A CN 200510053865 CN200510053865 CN 200510053865 CN 200510053865 A CN200510053865 A CN 200510053865A CN 1833999 A CN1833999 A CN 1833999A
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 229920005591 polysilicon Polymers 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- 239000011159 matrix material Substances 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 13
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000001962 electrophoresis Methods 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract 2
- 238000010923 batch production Methods 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 6
- 239000002127 nanobelt Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- -1 nanometer band Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a micron/nanometer combined structure device, which comprises the following steps: doping a substrate to form a doped layer serving as a substrate electrode; forming an insulating layer and exposing the substrate electrode; depositing a sacrificial layer and exposing the substrate electrode; depositing a polysilicon layer and doping the polysilicon layer; sputtering a metal layer; forming a mass block, an electrode and a base by using the polycrystalline silicon layer and the metal layer; the base is connected with the mass block through a connecting beam, and the mass block is integrally positioned on the sacrificial layer; corroding and removing the sacrificial layer below the mass block to enable the mass block to be suspended; fixing the one-dimensional nano material on the electrode and the mass block; and etching and removing the connecting beam between the base and the mass block. The invention integrates a mature MEMS process and a nano material assembly technology to manufacture a micron/nano combined structure device, wherein the MEMS microstructure in the combined structure is easy to realize in process, and can be integrated with an IC process to realize batch production.
Description
Technical field
The present invention relates to little/receive Mechatronic Systems (MEMS/NEMS) field, particularly a kind of preparation method of micrometer/nanometer combined structural element.
Background technology
Traditional micro electromechanical structure device usually adopts bridge type beam to support the structure of unsettled mass, and its material adopts little processing material---silicon and compound thereof commonly used substantially, and wherein mass size is the hundreds of micron, and the bridge type beam sectional dimension is also in micron dimension.Under the background of nanometer technology fast development in recent years, the nano material particularly application of one dimension (or accurate one dimension) structure in the micro electromechanical structure device is particularly paid close attention to.Someone proposes to utilize the minimum cross sectional dimensions and the big length dimension of monodimension nanometer material, applies it in the micro electromechanical structure device and forms the micrometer/nanometer combined structural element, can improve the performance of device so to a great extent.
The application number that the applicant submitted on December 24th, 2004 is to provide a kind of like this micrometer/nanometer combined structural element in 200410101600.3 the Chinese patent application " a kind of power sensor based on micro-Nano composite structure ", this sensor comprises bridge type beam, mass, matrix and is arranged on a plurality of electrodes on the matrix, between electrode and matrix, has an insulating barrier, the two ends of bridge type beam are fixed on the electrode, the unsettled centre that is fixed on bridge type beam of mass.Particularly, in this sensor, bridge type beam is a conductor oxidate nanometer band.In fact, the structure that is similar to aforementioned patent not only goes for sensor, also can be used for other application scenario such as detection such as the nano material characteristic.
Therefore, just needing a kind of method can utilize existing MEMS technology and nano material package technique to realize the making of micrometer/nanometer combined structural element.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of micrometer/nanometer combined structural element.
To achieve these goals, the invention provides a kind of preparation method of micrometer/nanometer combined structural element, comprise providing a monocrystalline silicon piece, carry out following processing step along same direction order on described matrix then as matrix:
1) upper surface to described matrix mixes to form a doped layer as base electrode;
2) shaping one insulating barrier, this insulating barrier while is as the layer that stops of sacrifice layer etching; Part in the described insulating barrier is removed, so that expose described base electrode;
3) deposit one sacrifice layer is removed a part of etching in this sacrifice layer then, exposes described base electrode;
4) deposit one polysilicon layer, and described polysilicon layer mixed, make described polysilicon layer to conduct electricity;
5) sputter one metal level;
6) described polysilicon layer of photoetching and etching and described metal level make described polysilicon layer and described metal level be shaped mass, electrode and pedestal; Wherein, be connected by tie-beam between described pedestal and the mass, described mass integral body is positioned on the described sacrifice layer;
7) sacrifice layer corrosion of described mass below is removed, made that described mass is unsettled;
8) monodimension nanometer material is fixed on described electrode and the mass, wherein, the two ends of described monodimension nanometer material are fixed on the electrode, and the intermediate portion is fixed on the described mass;
9) the tie-beam etching between described pedestal and the mass is removed.
The present invention has following beneficial effect:
1) the ripe MEMS technology of utilization is made the MEMS micro-structural in the micrometer/nanometer combined structural element, is easy to realize on technology, can be integrated with IC technology, realize producing in batches;
2) the nano material package technique that adopts Nano-technology Development to get up, the assemble nanometer material is on the MEMS micro-structural easily;
3) preparation method of the present invention is that integrated two kinds of mature technique are made a kind of new micrometer/nanometer combined structural element.
Description of drawings
Fig. 1 is the MEMS micro-structural vertical view after the MEMS technical process finishes in preparation method of the present invention;
Fig. 2 is the micrometer/nanometer combined structural element embodiment for preparing according to preparation method of the present invention;
Fig. 3 is according to technological process diagram process chart along the A-A line drawing in Fig. 1.
The specific embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
The preparation method of micrometer/nanometer combined structural element of the present invention comprises three processes generally: MEMS technical process, nano material assembling process and last handling process.The MEMS technical process mainly is to form to form needed electrode of MEMS micro-structural and unsettled mass on a matrix; The nano material assembling process mainly is that nano material is assembled on the MEMS micro-structural for preparing; Last handling process mainly is that the structure after the assembling is carried out last processing, finally obtains the micrometer/nanometer combined structural element for preparing.
In one embodiment of the invention, the structure after the MEMS technical process finishes comprises a matrix 10 as shown in Figure 1, and this matrix 10 is simultaneously also as base electrode.A unsettled mass 11 is arranged on this matrix 10, and the both sides of mass 11 are distributed with four electrodes, and a side is electrode 12 and 13, opposite side is an electrode 12 ' and 13 ', wherein, electrode 12 and 12 ' is symmetrically distributed in mass 11 both sides, and electrode 13 and 13 ' is symmetrically distributed in mass 11 both sides.The both sides in addition of mass 11 are distributed with pedestal 14 and 14 ' respectively, thereby mass 11 is connected unsettled on matrix 10 with pedestal 14 by tie-beam 15 respectively with 15 ' with 14 '.In addition, on matrix 10, also has a bond pad 16, as the joint of drawing of base electrode.
Fig. 3 illustrates an embodiment of MEMS technical process among the present invention by the process sequence details drawing, comprises the steps A)～J), these step numbers A wherein)～J) (a)～(j) with Fig. 3 is corresponding one by one.Specific as follows:
A) provide a monocrystalline silicon piece as matrix 10, the upper surface of matrix 10 is carried out heavy doping phosphorus,, make matrix 10 can be used as base electrode by being mixed in the surface of matrix 10 in other words to form a doped layer (not shown) as base electrode;
B) adopt thermal oxidation method at matrix 10 silicon substrate upper surfaces growth layer of silicon dioxide (SiO
2) 31;
C) adopt Low Pressure Chemical Vapor Deposition (LPCVD) deposit one deck silicon nitride (Si
3N
4) 32; Step B) and step C) in the silicon dioxide layer 31 that obtains and silicon nitride layer 32 as the layer that stops of insulating barrier and sacrifice layer etching;
D), removing the part of insulating barrier, forming an opening area 33, thereby expose base electrode by photoetching, reactive ion etching (RIE) patterned insulator layer (being silicon dioxide layer 31 and silicon nitride layer 32).This opening area 33 preferably is positioned at the position away from central authorities;
E) use LPCVD deposit one deck phosphorosilicate glass (PSG) as sacrifice layer 34;
F) by the graphical sacrifice layer 34 of photoetching, reactive ion etching (RIE), removing a part of sacrifice layer, and residual sacrifice layer 35 down; These residual sacrifice layer 35 both sides preferably expose a part of insulating barrier 36 and 36 ' respectively; After removing a part of sacrifice layer, also exposed the base electrode at opening area 33 places simultaneously;
G) on sacrifice layer 35, use LPCVD deposit one deck polysilicon 37; Then polysilicon layer 37 is carried out heavy doping phosphorus, make this polysilicon layer 37 to conduct electricity.This heavy doping phosphorus can be as follows: deposit one deck phosphorosilicate glass on polysilicon layer 37, and carry out annealing operation, remove residual phosphorosilicate glass at last, the polysilicon layer after obtaining mixing;
H) splash-proofing sputtering metal layer 38 on polysilicon layer 37 is as cadmium/gold (Cr/Au) layer;
I) by graphical polysilicon layer 37 of photoetching, reactive ion etching (RIE) and metal level 38, with polysilicon layer 37 and metal level 38 be shaped mass 11 among Fig. 1, electrode 12,12 ', 13 and 13 ', pedestal 14 and 14 ', tie-beam 15 and 15 ' and bond pad 16; Limit by diagram institute, in Fig. 3-(k), mass 11, electrode 12 and 12 ' only can be shown, and bond pad 16, still be easy to obtain the distribution of each parts in conjunction with Fig. 1; Wherein, mass 11 integral body are positioned on the sacrifice layer 35, and electrode 12,12 ', 13 and 13 ' preferably some is positioned on the insulating barrier outside the sacrifice layer 35 so that after the corrosion sacrifice layer 35, guarantee the fixing of electrode 12,12 ', 13 and 13 ' position;
J) with buffered hydrofluoric acid solution (BHF) corrosion phosphorosilicate glass sacrifice layer 35, wherein the part that is positioned at mass 11 belows in the sacrifice layer 35 to be removed at least, so that mass 11 is unsettled.See clearlyer in Fig. 1, this moment, mass 11 was supported by tie-beam 15 and 15 '.
In the nano material assembling process, the two ends of two monodimension nanometer materials are fixed on the electrode, and mid portion is fixed on the mass 11, the monodimension nanometer material here is meant such as materials such as nanometer band, nano wire and nanotubes.Be that example describes in the embodiment shown in Figure 2 with the zinc oxide nano-belt, the two ends of a zinc oxide nano-belt 21 are separately fixed on electrode 12 and 12 ', and the two ends of another root zinc oxide nano-belt 22 are separately fixed on electrode 13 and 13 ', and two nanometer bands 21 and 22 mid portion all are fixed on the mass 11.
For the assemble nanometer material, at first can adopt AFM operation, fluid arrangement, electrophoresis or growth in situ method that monodimension nanometer material is arranged in relevant position on electrode and the mass, and then nano material is fixed.Can adopt electrophoresis method to arrange monodimension nanometer material in one embodiment, concrete operations are: preparation one is suspended with the solution of many zinc oxide nano-belts; Use a high frequency ac signal generator on electrode 12 and electrode 12 ', to apply a high frequency ac signal; Then MEMS micro structural component shown in Figure 1 is immersed in the solution; Under the effect of electric field that forms between electrode 12 and the electrode 12 ', nanometer band in the solution is polarized, its two ends are oppositely charged respectively, and two ends respectively near with the electrode 12 and 12 ' of its opposite charge polarity, until there being a nanometer band 21 to be adsorbed on electrode 12 and 12 ', thereby finish the layout of nanometer band 21.Profit uses the same method, and another root zinc oxide nano-belt 22 can be arranged on electrode 13 and 13 '.At last, with FIB (FIB) spot welding of nanometer band is fixed on electrode and the mass.
In last handling process, with FIB (FIB) with pedestal 14 and 14 ' and mass 11 between tie-beam 15 and 15 ' etching remove, it is unsettled to make that mass 11 only has nanometer band 21 and 22 to support, and finishes the preparation of whole micrometer/nanometer combined structural element.The micrometer/nanometer combined structural element for preparing as shown in Figure 2, this device can be used as sensor, also can be used for the nanometer band 21 on this device or 22 is carried out Performance Detection.
Claims (10)
1, a kind of preparation method of micrometer/nanometer combined structural element comprises providing a monocrystalline silicon piece as matrix, carries out following processing step along same direction order on described matrix then:
1) upper surface to described matrix mixes to form a doped layer as base electrode;
2) shaping one insulating barrier, this insulating barrier while is as the layer that stops of sacrifice layer etching; Part in the described insulating barrier is removed, so that expose described base electrode;
3) deposit one sacrifice layer is removed a part of etching in this sacrifice layer then, exposes described base electrode;
4) deposit one polysilicon layer, and described polysilicon layer mixed, make described polysilicon layer to conduct electricity;
5) sputter one metal level;
6) described polysilicon layer of photoetching and etching and described metal level make described polysilicon layer and described metal level be shaped mass, electrode and pedestal; Wherein, be connected by tie-beam between described pedestal and the mass, described mass integral body is positioned on the described sacrifice layer;
7) sacrifice layer corrosion of described mass below is removed, made that described mass is unsettled;
8) monodimension nanometer material is fixed on described electrode and the mass, wherein, the two ends of described monodimension nanometer material are fixed on the electrode, and the intermediate portion is fixed on the described mass;
9) the tie-beam etching between described pedestal and the mass is removed.
2, the preparation method of micrometer/nanometer combined structural element according to claim 1 is characterized in that, in step 1) and step 4), and the described heavy doping phosphorus that is doped to.
3, the preparation method of micrometer/nanometer combined structural element according to claim 1, it is characterized in that, in step 2) in, described insulating barrier comprises silicon dioxide layer of growing with thermal oxidation method and the silicon nitride layer of using the Low Pressure Chemical Vapor Deposition deposit on silicon dioxide layer.
4, the preparation method of micrometer/nanometer combined structural element according to claim 1 is characterized in that, in step 3), described sacrificial layer material is a phosphorosilicate glass.
5, the preparation method of micrometer/nanometer combined structural element according to claim 2, it is characterized in that, in step 4), described polysilicon is carried out heavy doping phosphorus comprise: deposit one deck phosphorosilicate glass on described polysilicon layer, and carry out annealing operation, remove residual phosphorosilicate glass at last.
6, the preparation method of micrometer/nanometer combined structural element according to claim 1 is characterized in that, in step 5), described sputtering layer is cadmium/gold layer.
7, the preparation method of micrometer/nanometer combined structural element according to claim 1 is characterized in that, in step 6), described electrode has at least a part to be positioned on the insulating barrier outside the sacrifice layer.
8, the preparation method of micrometer/nanometer combined structural element according to claim 1, it is characterized in that, in step 8), adopt AFM operation, fluid arrangement, electrophoresis or growth in situ method that monodimension nanometer material is arranged on described electrode and the mass, then described monodimension nanometer material is fixed on described electrode and the mass.
9, the preparation method of micrometer/nanometer combined structural element according to claim 8 is characterized in that, with FIB described monodimension nanometer material spot welding is fixed on described electrode and the mass.
10, the preparation method of micrometer/nanometer combined structural element according to claim 8 is characterized in that, in step 9), the tie-beam between described pedestal and the mass adopts the focused particle beam etching to remove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100538655A CN100417587C (en) | 2005-03-14 | 2005-03-14 | Manufacturing method of micro-nano combined structure device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100538655A CN100417587C (en) | 2005-03-14 | 2005-03-14 | Manufacturing method of micro-nano combined structure device |
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| CN1833999A true CN1833999A (en) | 2006-09-20 |
| CN100417587C CN100417587C (en) | 2008-09-10 |
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| CN102502479A (en) * | 2011-11-17 | 2012-06-20 | 上海先进半导体制造股份有限公司 | Composite integrated sensor structure and manufacture method thereof |
| CN102515089A (en) * | 2011-12-21 | 2012-06-27 | 北京大学 | MEMS integration method |
| CN102583224A (en) * | 2012-03-08 | 2012-07-18 | 北京大学 | MEMS (micro-electromechanical system) and IC (integrated circuit) monolithical integration method |
| CN103389428A (en) * | 2013-07-31 | 2013-11-13 | 杭州士兰微电子股份有限公司 | Monitoring structure and monitoring method of micro-electro-mechanical technology |
| CN101849289B (en) * | 2007-07-23 | 2014-02-26 | 维斯普瑞公司 | Methods and devices for fabricating tri-layer beams |
| CN104934294A (en) * | 2014-03-18 | 2015-09-23 | 中国科学院上海微系统与信息技术研究所 | Strain film structure on insulator and method for adjusting stress of strain film |
| CN109437093A (en) * | 2018-10-26 | 2019-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Self-supporting micro nano structure and preparation method thereof |
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- 2005-03-14 CN CNB2005100538655A patent/CN100417587C/en not_active Expired - Fee Related
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| CN102515089A (en) * | 2011-12-21 | 2012-06-27 | 北京大学 | MEMS integration method |
| CN102515089B (en) * | 2011-12-21 | 2014-10-15 | 北京大学 | MEMS integration method |
| CN102583224A (en) * | 2012-03-08 | 2012-07-18 | 北京大学 | MEMS (micro-electromechanical system) and IC (integrated circuit) monolithical integration method |
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| CN103389428A (en) * | 2013-07-31 | 2013-11-13 | 杭州士兰微电子股份有限公司 | Monitoring structure and monitoring method of micro-electro-mechanical technology |
| CN103389428B (en) * | 2013-07-31 | 2016-03-23 | 杭州士兰微电子股份有限公司 | Microelectromechanical processes monitoring structure and method for supervising |
| CN104934294A (en) * | 2014-03-18 | 2015-09-23 | 中国科学院上海微系统与信息技术研究所 | Strain film structure on insulator and method for adjusting stress of strain film |
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|---|---|
| CN100417587C (en) | 2008-09-10 |
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