CN1804572A - Measurement method for reflectivity of high-reflection mirror - Google Patents
Measurement method for reflectivity of high-reflection mirror Download PDFInfo
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- CN1804572A CN1804572A CN 200610011254 CN200610011254A CN1804572A CN 1804572 A CN1804572 A CN 1804572A CN 200610011254 CN200610011254 CN 200610011254 CN 200610011254 A CN200610011254 A CN 200610011254A CN 1804572 A CN1804572 A CN 1804572A
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Abstract
The invention relates to a method for measuring high reflector reflection index which is characterized in that it adopts square wave or sinusoidal wave modulated wide-spectrum continuous laser as light source which enters into the stable resonator formed by two blocks of high reflectors; it uses square wave to modulate the up stage and down stage of the single period wave to obtain the lasting time and the channel reflecting index or uses fixed phase mode to detect the one-time or odd harmonic of light channel output signal; it uses the amplitude and the phase spiked value to modulate the angle frequency changing curve to obtain the lasting time and the channel reflecting index.
Description
Technical field
The present invention relates to a kind of measuring method, a kind of especially measuring method of reflectance ratio of high reflected mirror to optical component parameter.
Background technology
Along with laser power improves constantly, high power laser system is more and more higher to the requirement of the reflectivity of optical resonator chamber mirror; Along with the development of coating technique, the coating process level constantly is improved, and the reflectivity that can be coated with high reflective mirror is also more and more higher, surpasses 99.9%.For the cavity mirror parameter of accurately estimating laser instrument and the process for plating of optimizing high reflective mirror, must accurately measure the reflectivity of high reflective mirror.
The classic method of measurement of reflectivity, as methods such as spectrophotometer, white light ponds, all to measure the ratio of light intensity, error is big, can only provide three position effective digitals at most.When reflectivity was higher than 99.9%, these all can not provide reflectivity result very accurately usually with the method that light intensity ratio is measured as the basis, can't satisfy the requirement to the reflectance ratio of high reflected mirror measuring accuracy." a kind of measuring method of high specular reflectivity of reflector " (Chinese patent application numbers 98114152.8, publication number CN1242516A, open January 26 2000 date) reach " accurately measuring the reflectivity of high reflective mirror with light cavity ring-down spectroscopy method " (Chinese laser, Sun Fuge etc., the 26th volume the 1st phase 35-38 page or leaf, in January, 1999) provide a kind of high reflectivity measurement method, adopt pulse laser system to make light source, incide the straight type optical resonator that two high reflective mirrors are formed, receive optical cavity exponential damping signal, determine straight chamber ring-down time τ-, holding chamber is long constant then, add mirror to be measured and form folded cavity, determine folded cavity ring-down time τ＜, obtain the reflectivity R of mirror to be measured by the difference of two kinds of situations.This method adopts the mode of folded cavity and straight chamber combination, reduced because the measuring error that intracavity gas absorption, scattering and diffraction equal loss cause, but the restriction of factors such as the measuring accuracy of this method is subjected to, and pulsed laser beam is of poor quality, the competition of laser cavity internal schema, and because the pulse laser system of using, cost is not easy to promote the use of more than 1,000,000 yuans.
Summary of the invention
The objective of the invention is to avoid to adopt pulse laser system as the deficiency of light source and provide a kind of with wide range continuous semiconductor laser instrument or other continuous wave lasers method for measuring reflectance ratio of high reflected mirror as light source.
The objective of the invention is to reach by following measure: a kind of measuring method of reflectance ratio of high reflected mirror, its characteristics are:
(1), incides the stable optical resonator cavity that two plano-concave high reflective mirrors are formed with the wide range continuous laser of a branch of square wave or sine wave modulation; Or two plano-concave high reflective mirrors add the stable folded cavity that a plane test mirrors is formed, two plano-concave high reflective mirrors perpendicular to light path, concave surface relatively and laser is passed through from the minute surface center, add test mirrors under the long constant situation of holding chamber, make light path folding become test mirrors angle to be measured; Laser enters resonator cavity or carries out folded cavity through test mirrors from a plano-concave high reflective mirror, repeatedly reflection back and forth in resonator cavity or folded cavity, the part laser beam receives this outgoing laser beam by photodetector (photodiode detector or photomultiplier) and obtains output current or voltage signal from another plano-concave high reflective mirror output;
(2) waveform of record output current or voltage signal, once or odd harmonic amplitude and phase place, thus the reflectivity of ring-down time, chamber mirror and test mirrors obtained.Adopt the waveform of digital oscilloscope record current or voltage signal, with lock-in amplifier write down this signal waveform once or the amplitude of odd harmonic and phase place, by theoretical fitting signal output waveform or match signal waveform once or the frequency variation curve of the amplitude of odd harmonic and phase place all can obtain ring-down time, thereby obtain the reflectivity of ring-down time, chamber mirror and test mirrors.
The continuous modulated laser of described wide range adopts the solid state laser of continuous semiconductor laser instrument or diode pumping or fiber laser or gas laser as light source, spectrum width 0.001nm to 50nm, wavelength 0.2 to 11 μ m.
The reflectivity of the ring-down time in the described step (2), chamber mirror and test mirrors is obtained by the change curve match of output amplitude with the modulation angular frequency.
The reflectivity of the ring-down time in the described step (2), chamber mirror and test mirrors by the phase of output signal tangent value with the modulation angular frequency the change curve match obtain, perhaps by single modulation angular frequency place optical cavity output signal once or the phase place of odd harmonic directly obtain.
The reflectivity of the ring-down time in the described step (2), chamber mirror and test mirrors during by square-wave frequency modulation the ascent stage and the decline stage match of single cycle signal output waveform obtain.
Principle of the present invention is: adopt the solid state laser or the gas laser of continuous semiconductor laser instrument or diode pumping to make light source, require spectrum width between 0.001nm to 50nm, make to have in the laser frequency spectrum and severally resonate to several ten thousand longitudinal modes and optical cavity eigenfrequency, guaranteeing has laser energy to be coupled into optical cavity all the time; With square wave or sine wave modulation laser, incide the stable optical resonator cavity that two chamber mirrors are formed, or two chamber mirrors add the stable folded cavity that a test mirrors is formed, and in the chamber, come back reflective, adopt the amplitude and the phase place of phaselock technique recording of output signals first harmonic or odd harmonic, directly obtain ring-down time by amplitude and phase place, the reflectivity of chamber mirror and test mirrors, perhaps obtain ring-down time by amplitude under the different modulating angular frequency and the match of phase place tangent value, the reflectivity of chamber mirror and test mirrors, the ascent stage of single output signal periodic waveform and decline stage match obtain ring-down time during perhaps by square-wave frequency modulation, the reflectivity of chamber mirror and test mirrors.
The present invention compared with prior art has following advantage:
1. measuring accuracy height.With respect to pulsed laser, the solid state laser of semiconductor laser or diode pumping or gas laser output power are stable, and the beam quality height helps improving measuring accuracy.Because the phase potential energy under the single frequency directly calculates ring-down time and reflectivity, the approximating method among the present invention comes down to a kind of average, helps improving measuring accuracy.
2. device is simple, and cost is low.Adopt semiconductor laser or other continuous wave lasers as light source, avoided complicated, expensive pulse laser system.
3. can survey the reflectivity of any wave band high reflective mirror.Since at present semiconductor laser can cover ultraviolet, as seen to infrared band, this method is applicable to the measurement of nearly all wave band reflectance ratio of high reflected mirror.
4. reliability height.Owing to adopt multiple mode to determine the reflectivity of high reflective mirror, can improve the reliability of measurement result.
Description of drawings
Fig. 1 is a straight chamber of the present invention measurement mechanism structural representation;
Fig. 2 is 45 folded cavity measurement structure synoptic diagram when spending for test mirrors angle of the present invention;
Waveform ascent stage fitting result when Fig. 3 is the long 60cm in chamber of the present invention, 100kHz square-wave frequency modulation;
Waveform decline stage fitting result when Fig. 4 is the long 60cm in chamber of the present invention, 100kHz square-wave frequency modulation;
The curve-fitting results that the first harmonic amplitude changed with the modulation angular frequency when Fig. 5 was the long 80cm in chamber of the present invention;
The curve-fitting results that first harmonic phase place tangent value changed with the modulation angular frequency when Fig. 6 was the long 80cm in chamber of the present invention.
Embodiment
As shown in Figure 1, measurement mechanism of the present invention is made up of light source 1, catoptron 2, telescopic system 3, double-colored spectroscope 4, helium-neon laser 5, chamber mirror 6, detector 7, function generator 8, lock-in amplifier 9 and digital oscilloscope 10, function generator 8 is connected to light source 1 and makes the light source square-wave frequency modulation, be connected to simultaneously lock-in amplifier 9 as with reference to signal and digital oscilloscope 10 as synchronous triggering signal.The signal of detector 6 outputs is connected to lock-in amplifier 9 and digital oscilloscope 10 simultaneously, with record amplitude and phase place and optical cavity output waveform.As shown in Figure 2, add 45 degree mirror 11 compositions to be measured and stablize folded cavity, can measure the reflectivity of any high reflective mirror.
Light source 1 adopts the semiconductor laser that can modulate, its centre wavelength 828nm, spectrum width 0.03nm, the output of TEM00 mould, power 106mW, Melles Griot, adopt DS335, modulation range 1 μ Hz～3.1MHz, Stanford Research Systems by function generator 8) square-wave frequency modulation; Catoptron 2 makes optical path-deflecting and is convenient to regulate the direction of output laser, telescopic system 3 is complementary the zlasing mode and the intrinsic transverse mode that swings the chamber that declines, double-colored spectroscope makes 828nm laser-transmitting, 632.8nm laser total reflection, and main effect is to introduce He-Ne Lasers auxiliary adjustment light path.Helium-neon laser 5 (output power 5mW, Melles Griot) auxiliary adjustment light path.Two identical plano-concave high reflective mirrors 6, its zone of reflections centre wavelength 828nm, radius-of-curvature 1m form stable declining and swing optical cavity, decline and swing the chamber outgoing laser beam by silicon photodetector 7 (PDA55, Thorlabs) reception.The electric signal waveform of silicon photodetector output is by digital oscilloscope 10 (Tektronix TDS5054B) record.The amplitude of the electric signal first harmonic of silicon photodetector output and phase place are by lock-in amplifier (frequency range 0.5Hz-2.0MHz, Signal Recovery7280) record, and reference signal is provided by function generator 8.In the experiment, by the frequency shift square-wave modulation signal frequency of adjustment function generator.Modulating frequency f scope is got 1kHz～1MHz, and the modulation angular frequency is 2 π f.Need to deduct the influence of system responses in the data processing, the specific practice of measuring system response: in the light path, only put a chamber mirror, the phase place under the record corresponding modulating angular frequency.
For the long 60cm in chamber, 100kHz square-wave frequency modulation waveform ascent stage curve-fitting results constantly, obtain ring-down time 0.692 μ s, cavity mirrors reflectivity 99.711% as Fig. 3.Fig. 4 obtains ring-down time 0.706 μ s, cavity mirrors reflectivity 99.717% for the long 60cm in chamber, 100kHz square-wave frequency modulation waveform decline stage curve-fitting results constantly.
Fig. 5 during for the long 80cm in chamber amplitude obtain ring-down time 0.975 μ s, cavity mirrors reflectivity 99.726% with the curve-fitting results that the modulation angular frequency changes.Fig. 6 during for the long 80cm in chamber the phase place tangent value obtain ring-down time 0.940 μ s, cavity mirrors reflectivity 99.716% with the curve-fitting results that the modulation angular frequency changes.
Claims (9)
1. the measuring method of a reflectance ratio of high reflected mirror is characterized in that:
(1) with the wide range continuous laser of a branch of square wave or sine wave modulation, incide the stable optical resonator cavity that two plano-concave high reflective mirrors are formed, two high reflective mirrors perpendicular to light path, concave surface relatively and laser is passed through from the minute surface center, laser enters resonator cavity from a plano-concave high reflective mirror, repeatedly reflection back and forth in resonator cavity, the part laser beam receives this outgoing laser beam by photodetector and obtains output current or voltage signal from another plano-concave high reflective mirror output;
(2) waveform of record output current or voltage signal, once or odd harmonic amplitude and phase place, thus the reflectivity of ring-down time, chamber mirror and test mirrors obtained;
2. the measuring method of reflectance ratio of high reflected mirror according to claim 1, it is characterized in that: between described two plano-concave high reflective mirrors, can also add test mirrors under the long constant situation of holding chamber, make light path folding become test mirrors angle to be measured, the stable folded cavity of forming, laser enters folded cavity from a plano-concave high reflective mirror, repeatedly reflection back and forth in folded cavity, the part laser beam receives this outgoing laser beam by photodetector and obtains output current or voltage signal from another plano-concave high reflective mirror output.
3. the measuring method of reflectance ratio of high reflected mirror according to claim 1 and 2, it is characterized in that: the solid state laser of continuous modulated laser employing continuous semiconductor laser instrument of described wide range or diode pumping or fiber laser or gas laser are as light source, spectrum width 0.001nm to 50nm, wavelength 0.2 to 11 μ m.
4. the measuring method of reflectance ratio of high reflected mirror according to claim 1 and 2 is characterized in that: the continuous modulated laser of described wide range adopts square wave or sine wave modulation Laser Driven power supply, perhaps adopts the acousto-optic modulator modulating lasering beam.
5. the measuring method of reflectance ratio of high reflected mirror according to claim 1 and 2 is characterized in that: the reflectivity of the ring-down time in the described step (2), chamber mirror and test mirrors is obtained by the change curve match of output amplitude with the modulation angular frequency.
6. the measuring method of reflectance ratio of high reflected mirror according to claim 1 and 2, it is characterized in that: the reflectivity of the ring-down time in the described step (2), chamber mirror and test mirrors by the phase of output signal tangent value with the modulation angular frequency the change curve match obtain, perhaps by single modulation angular frequency place optical cavity output signal once or the phase place of odd harmonic directly obtain.
7. the measuring method of reflectance ratio of high reflected mirror according to claim 1 and 2 is characterized in that: the reflectivity of the ring-down time in the described step (2), chamber mirror and test mirrors during by square-wave frequency modulation the ascent stage and the decline stage match of single cycle signal output waveform obtain.
8. the measuring method of reflectance ratio of high reflected mirror according to claim 1 and 2 is characterized in that: adopt phaselock technique to write down once or odd harmonic amplitude and phase place in the described step (2).
9, the measuring method of reflectance ratio of high reflected mirror according to claim 2 is characterized in that: described test mirrors angle to be measured is the 5-75 degree.
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| CN100559146C (en) * | 2006-11-08 | 2009-11-11 | 中国科学院光电技术研究所 | A kind of method of determining high reflective cavity mirror and test mirrors reflectivity simultaneously |
| CN100559147C (en) * | 2007-04-26 | 2009-11-11 | 中国科学院光电技术研究所 | The high reflectivity measurement method of based semiconductor laser instrument self-mixing effect |
| CN101261181B (en) * | 2008-01-04 | 2010-06-16 | 中国科学院光电技术研究所 | Device for measuring high reflectivity |
| CN101126676B (en) * | 2007-09-25 | 2011-04-06 | 中国科学院光电技术研究所 | Laser beam switching timing optimization method for high reflection rate measurement |
| CN102128715A (en) * | 2010-12-08 | 2011-07-20 | 中国科学院光电技术研究所 | Method for measuring reflectivity of dual-wavelength high reflecting mirror |
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| US4793709A (en) * | 1985-08-16 | 1988-12-27 | Litton Systems, Inc. | Method and apparatus for measuring the losses of an optical cavity |
| US5313270A (en) * | 1992-05-07 | 1994-05-17 | The Board Of Trustees Of The Leland Stanford Junior University | Method and apparatus for measurement of reflectivity for high quality mirrors |
| US5986768A (en) * | 1997-10-31 | 1999-11-16 | The United States Of America, As Represented By The Secretary Of Commerce | Intra-cavity total reflection for high sensitivity measurement of optical properties |
| CN1242516A (en) * | 1998-07-16 | 2000-01-26 | 中国科学院大连化学物理研究所 | Method of measuring high specular reflectivity of reflector |
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