CN1802882A - 用于进行个人身份验证的装置 - Google Patents
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Abstract
本发明涉及一种验证装置,它基于电容指纹传感器。本发明也涉及此类指纹传感器的制造方法。实施本发明的一种基本思路是把电容指纹传感器制作在带有嵌入式集成电路芯片(380)的塑料衬底(363)上。本发明也描述了产生二维或三维形状电极结构(321、322、325、365、366)的方法,它们能够用于优化所述传感器的性能。如果所述三维结构设计为遵从手指的形状,那么在所述手指沿着所述传感器表面滑动时需要的压力非常小。以这种方式使用所述传感器符合人机工程学,使所述测量非常可靠。所发明的制作方法描述了如何对包含测量电子器件的集成电路进行连接和嵌入批量处理的大规模电极结构的方式,后者用于捕获所述指纹的电容影像。
Description
技术领域
本发明涉及用于进行个人身份验证的装置,例如对移动终端的用户进行身份验证。确切地说,本发明涉及指纹传感器装置。本发明也涉及新发明指纹传感器的制造方法。
背景技术
为了使移动终端能够感知其环境条件,在所述移动终端中需要配备传感器。所述信息能够用于若干知晓情景的应用,其中所述环境信息用于控制所述移动终端用户界面的用户界面外观和不同设置。为了对所述终端的用户进行身份验证也需要指纹传感器。
已经有了几种指纹传感器:基于皮肤阻抗的传感器、热传感器和光传感器。为了对小型电器比如移动终端的用户进行身份验证,最实用的解决方案是基于容抗测量。图1A和图1B介绍了所述电容指纹传感器测量皮肤阻抗变化的基本思路。当手指101滑过传感器阵列120时,所述传感器阵列测量皮肤的阻抗值。电极表面和皮肤表面内部的导电含盐层之间的电容量变化是至所述导电层之距离的函数。所述皮肤表面上变化的空气间隙和死亡角质细胞对形成所述电容传感器所述电极的导电层121、122形成了电容125。
图2显示了所述皮肤阻抗的粗略等效电路和所述阻抗测量原理。皮肤具有固定的组织电阻分量202以及固定的表面电阻分量203。所述测量电容也具有固定的分量272和随所述手指表面形状而变化的分量271。所述电容指纹传感器通过改变电极222的驱动电压281并测量来自传感器电极221的信号,测量所述变化的电容分量。所述信号以低噪声放大器282放大,并在283测量驱动和传感电极之间的相位差。干扰可以由保护电极压制,使用缓冲器285使其与所述信号输入保持相同电位。
指纹传感器也需要信号处理电路,优选情况下它是硅集成电路。提供指纹传感器的一种解决方案是使用集成电路,它既用作电容测量电极又用作信号处理电子器件。那么这种集成电路将安装在所述电器的表面。不过,捕获所述指纹之所述电容影像所需的面积大致为一平方厘米的量级。对于使用硅集成电路作为测量电极,这是很大的面积。不仅如此,所述测量包括根据所述测量原理以行或以矩阵排列的数百个电容像素。需要大量的布线,而且所述测量电极需要与所述集成电路绝缘。所以把所述电容电极连接到所述信号处理硅集成电路需要成本效益高的方法。
在专利文献US 5887343和US 6067368中介绍了一种典型的现有技术解决方案。通过使用分离的绝缘平面衬底以形成所述测量电极,解决了所述问题。这种衬底包含互连的布线,若干导孔穿过所述衬底。所述衬底连接到包含所述信号和数据处理功能的所述硅集成电路。不过,这种解决方案制造工艺复杂,因为必须在小空间之内连接大量的互连布线。此类布线也不很稳健,在移动使用中往往使所述结构易于损坏。
另一种现有技术解决方案是在所述硅晶片的顶面上直接产生所述测量电极。这样简化了互连布线的结构,但是所述解决方案需要硅表面大,因为所述电极所需的面积大。
所述现有技术解决方案还具有涉及安全的缺点。有可能对所述电容测量电极和所述集成电路之间的所述布线进行外部连接,并且通过使用这样的连接有可能在测量特定手指时“记录”所述手指所涉及的信号。那么在后来就有可能把这些记录的信号输入所述集成电路,因此无须任何手指就能够以电学方式获得肯定的验证结果。
现有技术解决方案的另一个缺点涉及所述传感器的人机工程学。为了使所述平面传感器和手指之间具有足够的接触面积,手指必须相当用力地压在传感器上。所以在手指没有恰当地压向并沿着传感器表面滑动时,所述测量往往可能失败。
本发明的目的是提供对上述缺点有改进的电容指纹传感器。所发明的指纹测量装置提供了批量生产的良好适应性、良好的安全性并符合人机工程学。因此,本发明对所述指纹传感器的成本效益和可靠性作出了实质改进,尤其是在移动电器中。
发明内容
根据本发明的指纹传感器装置包括电容测量所用的至少一个驱动电极和至少一个传感器电极,以及测量所述电极发出之信号的集成信号处理电路,以及所述电极与所述集成电路之间的互连布线,其特征在于所述至少一个驱动电极、所述至少一个传感器电极、所述信号集成电路和所述互连布线嵌入在集成模块之内。
本发明也涉及移动终端,它包括根据本发明的指纹传感器装置。
根据本发明用于生产指纹传感器的方法,其特征在于所述方法包括以下步骤:
-提供信号处理集成电路,
-提供至少一个驱动电极,
-提供至少一个传感器电极,
-把所述集成电路、所述至少一个驱动电极和所述至少一个传感器电极封装在集成模块中。
实施本发明的一种基本思路是把电容指纹传感器制作在带有嵌入式集成电路芯片的塑料衬底中。所发明的制作方法描述了如何对包含测量电子器件的集成电路进行连接和嵌入批量处理的大规模电极结构的方式,后者用于捕获所述指纹的电容影像。使用以下技术细节中的一点或几点,能够最有利地理解所发明的概念:
1)把所述硅集成电路安装在带有互连布线的载体衬底上;
2)使所述集成电路电连接到所述载体衬底所用的不同方法:
-丝焊,
-通过使用电镀、无电镀或薄膜喷镀的连接,
-从所述集成电路至所述载体衬底的直接电气接触(激光孔等);
3)把二维或三维塑料结构模压在所述载体和所述IC的顶面上以形成所述测量电极的衬底;
4)在所述三维结构的顶面上沉积电极金属,优选情况下分辨率为5-10μm,以及
5)把所述结构封装在塑料中。
作为替代,如果所述集成电路表面大,也可能使用以下实施例:所述电极和绝缘/保护聚合物层直接沉积在所述集成电路上。
所述指纹传感器单元也可能集成其他类型的传感器。例如在本发明的一个实施例中,发光二极管和光敏探测器置于指槽的相对侧,用于测量光线通过所述手指的吸收。所用光线的波长为使活体手指中血液造成的吸收信号最大。这种方法能够从所述用户的手指检测氧化血色素。因此通过这种方法也能够监视心率。这就使得使用任何假手指对识别弄虚作假极为困难。此外,其他传感器比如温度传感器TS和光线传感器LS也能够集成在所述指槽之内并嵌入到所述指纹传感器模块中。
本发明提供了优于现有技术解决方案的重要优点。所述制作过程非常简单,而且本发明能够应用于现有的指纹测量概念和电子器件,使所述设备的制作成本效益更高。
由于所述嵌入的结构,所述传感器结构非常安全。实际上不可能对所述传感器电极和所述信号处理电路之间的所述布线进行任何外部连接。所以,从实际的手指测量记录信号并使用它们造假的风险最小。
本发明也描述了产生二维或三维电极表面结构(它们能够用于优化所述传感器的性能)的方式。如果所述至少二维形成的结构设计为遵从手指的形状,在所述手指沿着所述传感器表面滑动时需要的压力非常小。以这种方式使用传感器符合人机工程学,使所述测量非常可靠。
优选情况下,通过使用柔性内插件封装技术,把所述传感器电极和所述测量电子器件比如ASIC集成到三维模块中,实现了至少二维形成的所述传感器表面结构。所述柔性内插件封装技术是基于如使用柔性Kapton薄膜作为衬底,进行布线以及安装传感器和ASIC芯片。在顶面上使用模压的聚合物盖层保护所述集成电路和传感器。在使用所述柔性电路板产生2D或3D结构时,所述传感器和电子器件可以是所述设备外壳的一部分。
在附属的权利要求书中介绍了本发明的优选实施例。
附图简要说明
下一步将根据附图,参考示范性实施例更加详细地介绍本发明,其中
图1A展示了使用电容指纹传感器;
图1B展示了现有技术电容指纹传感器的操作原理;
图2展示了一幅框图,描述了使用主动保护的皮肤阻抗测量;
图3展示了根据本发明之示范性装置的横断面,在衬底和ASIC之间应用了丝焊;
图4展示了根据本发明之示范性装置的横断面,在衬底和ASIC之间应用了喷镀连接;
图5展示了根据本发明之示范性装置的横断面,ASIC和电极位于衬底的相对侧面上;
图6展示了根据本发明之示范性装置的横断面,柔性衬底受到弯曲以用作所述单元电连接的表面;
图7A展示了根据本发明之示范性装置的横断面,所述ASIC和所述电极之间的镀膜位于所述衬底上;
图7B展示了根据本发明之示范性装置的俯视图,所述ASIC和所述电极之间的镀膜位于所述衬底上,并且使用了保护环;
图8展示了根据本发明之示范性装置的横断面,不同的喷镀层用作电极和保护环;
图9展示了根据本发明之示范性装置的更多的横断面和一幅俯视图,不同的喷镀层用作电极和保护环;
图10展示了根据本发明之示范性装置的横断面,柔性衬底受到弯曲用作电极和所述单元电连接的表面;
图11展示了根据本发明另一个示范性装置的横断面,应用了柔性衬底,用作所述单元电连接的表面;
图12展示了根据本发明之示范性装置的横断面,在ASIC上直接提供了电极和外部连接;
图13展示了根据本发明之示范性装置的横断面,在ASIC上直接提供了电极,在所述ASIC和衬底之间使用了丝焊;
图14展示了根据本发明之示范性装置的横断面,在ASIC上直接提供了电极,在所述ASIC和衬底之间使用了喷镀连接;
图15展示了根据本发明之示范性装置的横断面,使用聚合物中沟槽喷镀,在ASIC上直接提供了电极和外部连接;
图16A展示了根据本发明之单元的示范性生产过程中160-164阶段后产品样本的横断面,其中使用了小ASIC;
图16B展示了根据本发明之单元的示范性生产过程中165-169阶段后产品样本的横断面;
图17A展示了根据本发明之单元的示范性生产过程中170-174阶段后产品样本的横断面,其中使用了大ASIC;
图17B展示了根据本发明之单元的示范性生产过程中175-179阶段后产品样本的横断面。
具体实施方式
以上在现有技术的说明中讲解了图1A、图1B和图2。
图3展示了根据本发明一个示范性装置的横断面。所述装置包括衬底363,它是如Kapton薄膜。所述ASIC处理/测量电路380安装在所述载体363上。所述单元通过焊接从其焊球367和368处连接到印刷电路板。所述ASIC电路通过至所述衬底上镀膜375、376的丝焊361、362,电连接到所述焊球。所述驱动电极321和所述传感电极322以喷镀形成的布线以及导孔323和324连接到所述ASIC。通过对缩微复制聚合物层367产生聚合物突起365和366,使所述电极更接近所述单元的所述表面。所述突起的厚度是例如100-200μm。在所述单元的顶面上是封装325。
图4展示了根据本发明另一个示范性装置的横断面。所述装置类似于图3中的前一个实施例,但是以至所述衬底的印刷镀膜475、476的金属膜连接导孔461、462形成了从所述ASIC至所述焊球的接触。这种装置需要减薄的ASIC电路,使得所述导孔461、462不必非常深。
图5展示了根据本发明第三个示范性装置的横断面。所述装置类似于前面的实施例,但是在这个装置中所述ASIC直接电连接到柔性衬底即“柔性板”563。所述电极521、522和所述ASIC 580在所述衬底的相对侧面上。所述电极以导孔523、524(它们通过所述衬底上的孔延伸到所述ASIC的表面)连接到所述ASIC。优选情况下,所述单元以所述柔性板563端部的连接器连接到其他电子器件。优选情况下,所述柔性衬底Kapton薄膜。
图6展示了根据本发明第四个示范性装置的横断面。所述装置类似于图5中前一个实施例,但是在这个装置中所述单元焊接到其他电子器件。实现这一点是通过弯曲669并把所述柔性板663安装在所述单元之下,而且进一步把焊球679连接到所述柔性板663。层625和668由封装产生。
图7A展示了根据本发明第五个示范性装置的横断面。所述装置类似于图5中的前述实施例,但是在这个装置中所述所述ASIC 780和所述电极721、722之间的所述镀膜723、724位于所述柔性衬底763上,因此避免了一层缩微复制聚合物并缩小了所述导孔的深度。图7B展示了图7A所示装置的俯视图,不含顶面封装。图7B显示了所述驱动电极721,它位于所述聚合物层765上。所述驱动电极通过所述导孔723连接到所述ASIC。此图也显示了带有保护环的、传感器电极722的阵列。所述传感器电极和保护环由喷镀连线到所述导孔724的阵列。
图8展示了根据本发明第六个示范性装置的横断面。所述装置类似于图7中的前一个实施例,但是在这个装置中在所述传感器电极镀膜之下有保护电极827、828。所述保护电极和传感器电极都以导孔826、824连接到所述ASIC。
图9展示了衬底963上示范性传感电极922和保护电极928的俯视图和横断面图。所述保护电极928位于所述传感电极922之下,所述电极之间有绝缘层929。在这个实施例中,所述保护电极具有较大的表面。缓冲放大器985使所述保护电极的电位与所述传感器电极相同,因此所述传感器电极承载较少的邻近材料即干扰。
图10展示了装置的进一步修改,通过弯曲柔性印刷电路板(PWB)即薄膜衬底1063至所述单元之下并在所述柔性板上附着焊球1078,连接到其他电子器件。在这个实施例中所述柔性板的另一端弯曲至所述单元之上,以便使用所述柔性板的另一端作为电极。使用所述柔性薄膜的双侧镀膜1030、1034及导孔1023、1024,提供了至所述电极1022和至所述焊球1078的所述布线。在所述柔性板的电极端,一个镀膜表面1030用作传感电极,所述柔性板的第二个镀膜表面1034用作保护电极。这种结构能够形成二维或三维的电极-手指界面。
图11展示了另一个实施例,柔性印刷电路衬底的一端用作电极1122,所述柔性板的其他部分用于外部连接。类似于图10的实施例,可以进行所述镀膜表面与所述ASIC 1180之间的所述连接。这种结构也能够形成二维或三维的电极-手指界面。这种装置能够直接模压成如移动电话的盖板1168。
图12展示了根据本发明又一个示范性装置的横断面。在这种情况下所述ASIC电路1280对于所需的电极结构足够大,所以有可能在所述ASIC上直接产生二维或三维电极结构。在聚合物突起1266上产生所述传感电极1222和所述驱动电极1221。至所述焊球1277和1278的连接也使用类似聚合物突起和镀膜形成。在所述ASIC和电极上有保护聚合物层1225。
图13展示了根据本发明之再一个示范性装置的横断面。这个实施例类似于图12的装置,但是在这个装置中有衬底1363和焊丝1361、1362,用于产生从所述ASIC 1280至所述衬底1363的喷镀焊盘和焊球1377、1378的连接。
图14展示了根据本发明之另一个示范性装置的横断面,这个实施例类似于图13的装置,但是在所述ASIC 1480和所述衬底1463之间不是使用焊丝而是使用喷镀形成连接1461、1462。
图15展示了根据本发明之另一个示范性装置的横断面。这个实施例类似于图12的装置,但是这个实施例包括聚合物层1525,优选情况下带有100-150μm的沟槽1565。所述焊球1577、1578首先安装在所述聚合物的孔中,在所述聚合物对面上的沟槽中作出镀膜1521、1522,它们形成了所述电极。所述聚合物衬底1525然后安装在所述ASIC 1580上。
图16A和图16B展示了根据本发明之图4中单元的示范性生产过程。这些图显示了已经执行了所涉及的制作阶段之后,要制作之所述单元的横断面。首先在160阶段中,把ASIC电路胶结在包括布线的柔性衬底上。优选情况下所述ASIC是薄型组件,厚度仅有50-100μm。所述柔片衬底可以大至安装几个组件。在步骤161中把聚合物层浇铸在所安装的ASIC的顶部。在步骤162中开通若干导孔通过所述聚合物层,直至所述柔性衬底的所述布线并到达所述ASIC焊盘。然后在步骤163中电镀上所述镀膜并形成图案。在步骤164中使用缩微复制模注模所述聚合物层。
下一步在图16B中展示了在步骤165中开通若干导孔通过所述聚合物层到达所述ASIC焊盘。这也可以在前一个步骤期间通过模孔铸型形成。在步骤166中形成电镀镀膜图案以形成电极结构。在步骤167中在所述器件的顶部浇铸保护聚合物层。然后在步骤168中打开所述衬底的焊接区域,最后在步骤169中对所述焊接突起进行处理并切割。
图17A和图17B展示了另一个示范性过程,用于制作根据本发明的、图12的单元。首先在170阶段中在所述ASIC表面的顶部制作二维或三维形成的结构,高度大致为100-200μm。在171阶段中在所述ASIC和所述3D聚合物结构的顶部沉积薄膜喷镀。所述喷镀可以使用如Cr-Au形成。在步骤172中在所述镀膜的顶部电镀上光致抗蚀剂。然后在步骤173中对所述光致抗蚀剂形成图案,并在步骤174中对所述金属层进行蚀刻。
下一步在图17B中展示了在步骤175中去除所述光致抗蚀剂。在步骤176中浇铸保护聚合物层,并在步骤177中为倒装芯片过程打开接触区域。然后在步骤178中利用倒装芯片突起过程安装所述焊球,最后在步骤179中所生产的单元安装在盖板上。
以上通过参考上述实施例已经讲解了本发明,并且已经展示了本发明的几个工业优点。显然本发明不仅仅限于这些实施例,而是包含本发明思想的实质和范围之内所有可能的实施例以及以下的专利权利要求书。例如,本发明验证装置的思路不限于用在移动终端中,而是也能够应用于许多其他组件和目的。本发明也不限于使用所述材料。
Claims (43)
1.一种指纹传感器装置,包括电容测量所用的至少一个驱动电极(321)和至少一个传感器电极(322),以及测量所述电极发出之信号的集成信号处理电路(380),以及所述电极与所述集成电路之间的互连布线(323、324),其特征在于所述至少一个驱动电极、所述至少一个传感器电极、所述信号集成电路和所述互连布线嵌入在集成模块之内。
2.根据权利要求1的装置,其特征在于,所述电极与所述集成电路以衬底(1063、1163)连接,所述衬底包括所述电极和所述集成电路之间的所述布线(1030、1122)。
3.根据权利要求1的装置,其特征在于,所述衬底包括所述至少一个驱动电极和/或所述至少一个传感器电极。
4.根据权利要求1的装置,其特征在于,它包括内含布线的衬底(1063、1163),用于至所述集成电路的外部连接。
5.根据权利要求4的装置,其特征在于,它包括所述集成电路(380)和所述衬底(363)的布线之间的丝焊(361、362)。
6.根据权利要求4的装置,其特征在于,它包括所述集成电路(480)和所述衬底(463)的布线之间的金属膜(461、462)。
7.根据权利要求2或4的装置,其特征在于,所述衬底是柔性薄膜。
8.根据权利要求1的装置,其特征在于,所述互连布线是聚合物层(365、325)之间的金属膜(323、324)。
9.根据权利要求1的装置,其特征在于,所述至少一个驱动电极(321)和/或所述至少一个传感器电极(322)是聚合物层(325、365、366)之间的金属膜(323、324)。
10.根据权利要求1的装置,其特征在于,它包括所述至少一个驱动电极附近和/或所述至少一个传感器电极附近的保护环(827、828)。
11.根据权利要求10的装置,其特征在于,所述保护环是金属膜(928),所述装置包括所述保护环金属膜(928)和所述传感器电极(922)之间的绝缘聚合物层(929)。
12.根据权利要求1的装置,其特征在于,所述集成模块以注模聚合物封装。
13.根据权利要求1的装置,其特征在于,所述传感器的表面具有至少二维的弯曲形状。
14.根据权利要求13的装置,其特征在于,所述形状近似手指的形状。
15.根据权利要求1的装置,其特征在于,所述装置包括升高所述电极(321、322)所用的突起(365、366)。
16.根据权利要求15的装置,其特征在于,所述突起是聚合物层。
17.根据权利要求1的装置,其特征在于,所述传感器包括一个驱动电极(721)和一行传感电极(722)。
18.根据权利要求17的装置,其特征在于,所述测量电路用于在所述手指相对于所述传感电极行在垂直方向上移动时测量连续信号,用于提供所述手指电容测量结果的二维矩阵。
19.根据权利要求1的装置,其特征在于,所述装置进一步包括红外光源、红外光探测器和第二测量装置,用于测量所述手指对红外光的吸收。
20.根据权利要求1的装置,其特征在于,所述装置进一步包括温度传感器,用于测量所述手指的温度。
21.根据权利要求1的装置,其特征在于,所述装置进一步包括湿度传感器,用于测量所述手指的湿度。
22.一种移动终端,其特征在于,它包括根据以上权利要求中任何一条的指纹传感器装置。
23.一种生产指纹传感器的方法,其特征在于所述方法包括以下步骤:
-提供信号处理集成电路(160、170),
-提供至少一个驱动电极(166、171-175),
-提供至少一个传感器电极(166、171-175),
-把所述集成电路、所述至少一个驱动电极和所述至少一个传感器电极封装在集成模块中(160-167、170-176)。
24.根据权利要求23的方法,其特征在于,所述封装的步骤包括封装进聚合物的步骤(161、164、167、176)。
25.根据权利要求23的方法,其特征在于,所述提供至少一个驱动电极的步骤包括镀金属膜的步骤(166、171)。
26.根据权利要求23的方法,其特征在于,所述提供至少一个传感电极的步骤包括镀金属膜的步骤(166、171)。
27.根据权利要求23的方法,其特征在于,所述方法包括在所述至少一个传感器电极附近提供至少一个保护环的步骤。
28.根据权利要求27的方法,其特征在于,所述提供至少一个保护环的步骤包括镀金属膜的步骤。
29.根据权利要求27的方法,其特征在于,它包括在所述至少一个保护环和所述至少一个传感电极之间提供绝缘聚合物层的步骤。
30.根据权利要求23的方法,其特征在于,它包括提供衬底以及在所述封装之前在所述衬底上连接所述集成电路的步骤(160)。
31.根据权利要求30的方法,其特征在于,所述方法包括在所述衬底中提供孔径的步骤(168),用于提供通过所述衬底的电连接(169)。
32.根据权利要求23的方法,其特征在于,所述方法包括在所述衬底和所述电极之间提供升高突起的步骤(164、170)。
33.根据权利要求32的方法,其特征在于,所述突起由聚合物层形成。
34.根据权利要求30的方法,其特征在于,所述衬底是柔性的并包括布线。
35.根据权利要求34的方法,其特征在于,所述柔性衬底的一端用于把外部电路电连接到所述指纹传感器。
36.根据权利要求34的方法,其特征在于,所述柔性衬底的布线用于提供所述至少一个传感电极以及/或者用于提供所述至少一个驱动电极。
37.根据权利要求23的方法,其特征在于,所述至少一个传感电极和/或所述至少一个驱动电极在所述集成电路的表面上镀有金属膜。
38.根据权利要求30的方法,其特征在于,通过在所述集成电路和所述衬底的布线之间进行丝焊提供电连接。
39.根据权利要求30的方法,其特征在于,通过在所述集成电路和所述衬底的布线之间镀金属膜(163)提供电连接。
40.根据权利要求23的方法,其特征在于,利用倒装芯片过程使导电突起连接到衬底的金属膜或所述集成电路,用于提供所述集成电路的外部电连接。
41.根据权利要求23的方法,其特征在于,使用缩微复制注模通过注模提供聚合物层(164)。
42.根据权利要求23-41中任何一条的方法,其特征在于,所述过程包括层叠地提供若干聚合物层(161、164、168、170、176)和至少一个金属膜层(163、166、171)的步骤。
43.根据权利要求23的方法,其特征在于,所述指纹传感器嵌入在装备盖板中。
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Publication number | Publication date |
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CA2514067A1 (en) | 2004-08-05 |
KR20050107575A (ko) | 2005-11-14 |
CN1802882B (zh) | 2010-11-10 |
EP1588595B1 (en) | 2011-09-14 |
JP2006517023A (ja) | 2006-07-13 |
CA2514067C (en) | 2010-09-07 |
US20050031174A1 (en) | 2005-02-10 |
US7606400B2 (en) | 2009-10-20 |
KR100759117B1 (ko) | 2007-09-19 |
WO2004066693A1 (en) | 2004-08-05 |
EP1588595A1 (en) | 2005-10-26 |
WO2004066693A8 (en) | 2005-11-03 |
FI20030102A0 (fi) | 2003-01-22 |
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