CN1776882A - 一种改进的BiInHg汞齐 - Google Patents

一种改进的BiInHg汞齐 Download PDF

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CN1776882A
CN1776882A CN 200510122984 CN200510122984A CN1776882A CN 1776882 A CN1776882 A CN 1776882A CN 200510122984 CN200510122984 CN 200510122984 CN 200510122984 A CN200510122984 A CN 200510122984A CN 1776882 A CN1776882 A CN 1776882A
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amalgam
biinhg
mass content
doped element
mixes
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CN100428398C (zh
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朱升和
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GAOYOU GAO HE PHOTOELECTRIC EQUIPMENT Co Ltd
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Abstract

本发明公开了汞齐技术领域内的一种改进的BiInHg汞齐,含有Bi、In、Hg,其中Bi、In、Hg质量含量分别为60%-70%、25%-35%、3%-8%,该汞齐中还含有质量含量为0.1%-3.5%的参杂元素,参杂元素为Pt、Ir、Pd、Rh、Cu、Ag、Au、Zn、Ni、Mn、Fe、Co、Ti中的至少一种。在汞齐制备过程中直接将参杂元素熔入汞齐合金中,即可获得本发明所述的汞齐,参杂元素可与Bi、In形成共晶体,改善了汞齐合金的晶粒结构,可阻止汞原子淅出,避免了汞齐表面粘连;本发明在基本不改变汞齐配比和特性曲线的前提下,使固溶态汞齐变为固态,克服了淅汞粘连现象,方便了灯管的制造,减少了环境污染。

Description

一种改进的BiInHg汞齐
技术领域
本发明涉及一种用于荧光灯及节能灯制造的汞齐。
背景技术
在荧光灯及节能灯的制造中,通常采用汞齐来控制灯管内的汞气压,使汞气压处于最佳值0.8Pa,可获得最高的光效。不同汞齐的元素配比,提供的最佳值0.8Pa的温度区域是不同的。汞齐在常温下可以是固态、固溶态、凝胶态及液态等,大部分汞齐都是固态。现有技术中应用的某些配比的汞齐如:BiInHg,这种汞齐具有的共同特征在于:Bi与In的质量比为2∶1左右,Hg的质量含量为3%-8%,在80℃-100℃附近的温度区域内能提供最佳的汞气压(0.8Pa),但是这类配比的汞齐在室温下(25℃左右)往往处于固溶态,表面有汞原子淅出,容易产生粘连,这样不利于环境保护,也不便于制灯应用。
发明内容
本发明的目的是提供一种汞齐,使固溶态汞齐常温下为固态,克服淅汞粘连现象。
本发明的目的是这样实现的:一种改进的BiInHg汞齐,含有Bi、In、Hg,其中Bi、In、Hg质量含量分别为60-70%、25%-35%、3%-8%,该汞齐中还含有质量含量为0.1%-3.5%的参杂元素,所述参杂元素为Pt、Ir、Pd、Rh、Cu、Ag、Au、Zn、Ni、Mn、Fe、Co、Ti中的至少一种。
在汞齐制备过程中直接将参杂元素熔入汞齐合金中,即可获得本发明所述的汞齐,参杂元素可与Bi、In形成共晶体,改善了汞齐合金的晶粒结构,可阻止汞原子淅出,避免了汞齐表面粘连;本发明在基本不改变汞齐配比,不改变汞齐特性曲线的前提下,使固溶态汞齐变为固态,克服了淅汞粘连现象,方便了灯管的制造,减少了环境污染。
具体实施方式
实施例1
一种BiInHg汞齐,含有Bi、In、Hg和参杂元素Pd,各组分的质量含量分别为Bi 63.9%、In 31%、Hg 5%、Pd 0.1%。
实施例2
一种BiInHg汞齐,含有Bi、In、Hg和参杂元素Cu,各组分的质量含量分别为Bi 60.5%、In 31.5%、Hg 4.5%、Cu 3.5%。
实施例3
一种BiInHg汞齐,含有Bi、In、Hg和参杂元素Mn,各组分的质量含量分别为Bi 68%、In 28%、Hg 3.5%、Mn 0.5%。
实施例4
一种BiInHg汞齐,含有Bi、In、Hg、参杂元素Zn和Ag,各组分的质量含量分别为Bi 60%、In 35%、Hg 3.5%、Zn 0.5%、Ag 1%。
实施例5
一种BiInHg汞齐,含有Bi、In、Hg、和参杂元素Ni,各组分的质量含量分别为Bi 68.2%、In 25%、Hg 6%、Ni 0.8%。
实施例6
一种BiInHg汞齐,含有Bi、In、Hg、参杂元素Ir和Pd,各组分的质量含量分别为Bi 69%、In 25%、Hg 3%、Ir 1.2%、Pd 1.8%。
实施例7
一种BiInHg汞齐,含有Bi、In、Hg、参杂元素Zn和Ir,各组分的质量含量分别为Bi 66%、In 30%、Hg 3%、Zn 0.8%、Ir 0.2%。
实施例8
一种BiInHg汞齐,含有Bi、In、Hg、参杂元素Pt和Pd,各组分的质量含量分别为Bi 70%、In 25%、Hg 4.5%、Pt 0.2%、Pd 0.3%。
实施例9
一种BiInHg汞齐,含有Bi、In、Hg、参杂元素Ag、Pt和Pd,各组分的质量含量分别为Bi 60%、In 31%、Hg 8%、Ag 0.5%、Pt 0.2%、Pd 0.3%。
上述各实施例中的汞齐常温下表面无汞淅出,无粘连,可应用于制造节能等和荧光灯。
本发明并不局限于上述实施例,参杂元素为Pt、Ir、Pd、Rh、Cu、Ag、Au、Zn、Ni、Mn、Fe、Co、Ti中的一种或多种,其质量含量为0.1%-3.5%,均可获得常温下呈固态的汞齐。

Claims (1)

1、一种改进的BiInHg汞齐,含有Bi、In、Hg,其中Bi、In、Hg质量含量分别为60-70%、25%-35%、3%-8%,该汞齐中还含有质量含量为0.1%-3.5%的参杂元素,所述参杂元素为Pt、Ir、Pd、Rh、Cu、Ag、Au、Zn、Ni、Mn、Fe、Co、Ti中的至少一种。
CNB2005101229841A 2005-12-09 2005-12-09 一种改进的BiInHg汞齐 Expired - Fee Related CN100428398C (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103988280A (zh) * 2011-11-21 2014-08-13 工程吸气公司 含有改进的起始汞合金的灯

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL168367C (nl) * 1975-06-20 1982-03-16 Philips Nv Lagedrukkwikdampontladingslamp en werkwijze voor de vervaardiging hiervan.
US5225157A (en) * 1989-07-19 1993-07-06 Microelectronics And Computer Technology Corporation Amalgam composition for room temperature bonding
WO2002097858A1 (en) * 2001-05-25 2002-12-05 Advanced Lighting Technologies, Inc. Materials and methods for mercury vapor pressure control in discharge devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103988280A (zh) * 2011-11-21 2014-08-13 工程吸气公司 含有改进的起始汞合金的灯
CN103988280B (zh) * 2011-11-21 2017-04-19 工程吸气公司 含有改进的起始汞合金的灯

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Denomination of invention: Improved Bi Inllg amalgam

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