CN100428398C - 一种改进的BiInHg汞齐 - Google Patents
一种改进的BiInHg汞齐 Download PDFInfo
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- CN100428398C CN100428398C CNB2005101229841A CN200510122984A CN100428398C CN 100428398 C CN100428398 C CN 100428398C CN B2005101229841 A CNB2005101229841 A CN B2005101229841A CN 200510122984 A CN200510122984 A CN 200510122984A CN 100428398 C CN100428398 C CN 100428398C
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Abstract
本发明公开了汞齐技术领域内的一种改进的BiInHg汞齐，含有Bi、In、Hg，其中Bi、In、Hg质量含量分别为60%-68%、28%-35%、3%-8%，该汞齐中还含有质量含量为0.1%-3.5%的掺杂元素，掺杂元素为Pt、Ir、Pd、Rh、Cu、Ag、Au、Zn、Ni、Mn、Fe、Co、Ti中的至少一种。在汞齐制备过程中直接将掺杂元素熔入汞齐合金中，即可获得本发明所述的汞齐，掺杂元素可与Bi、In形成共晶体，改善了汞齐合金的晶粒结构，可阻止汞原子淅出，避免了汞齐表面粘连；本发明在基本不改变汞齐配比和特性曲线的前提下，使固溶态汞齐变为固态，克服了淅汞粘连现象，方便了灯管的制造，减少了环境污染。
Description
技术领域
本发明涉及一种用于荧光灯及节能灯制造的汞齐。
背景技术
在荧光灯及节能灯的制造中，通常采用汞齐来控制灯管内的汞气压，使汞气压处于最佳值0.8Pa，可获得最高的光效。不同汞齐的元素配比，提供的最佳值0.8Pa的温度区域是不同的。汞齐在常温下可以是固态、固溶态、凝胶态及液态等，大部分汞齐都是固态。现有技术中应用的某些配比的汞齐如：BiInHg，这种汞齐具有的共同特征在于：Bi与In的质量比为2∶1左右，Hg的质量含量为3％-8％，在80℃-100℃附近的温度区域内能提供最佳的汞气压(0.8Pa)，但是这类配比的汞齐在室温下(25℃左右)往往处于固溶态，表面有汞原子淅出，容易产生粘连，这样不利于环境保护，也不便于制灯应用。
发明内容
本发明的目的是提供一种汞齐，使固溶态汞齐常温下为固态，克服淅汞粘连现象。
本发明的目的是这样实现的：一种改进的BiInHg汞齐，含有Bi、In、Hg，其中Bi、In、Hg质量含量分别为60％-68％、28％-35％、3％-8％，该汞齐中还含有质量含量为0.1％-3.5％的掺杂元素，所述掺杂元素为Pt、Ir、Pd、Rh、Cu、Ag、Au、Zn、Ni、Mn、Fe、Co、Ti中的至少一种。
在汞齐制备过程中直接将掺杂元素熔入汞齐合金中，即可获得本发明所述的汞齐，掺杂元素可与Bi、In形成共晶体，改善了汞齐合金的晶粒结构，可阻止汞原子淅出，避免了汞齐表面粘连；本发明在基本不改变汞齐配比，不改变汞齐特性曲线的前提下，使固溶态汞齐变为固态，克服了淅汞粘连现象，方便了灯管的制造，减少了环境污染。
具体实施方式
实施例1
一种BiInHg汞齐，含有Bi、In、Hg和掺杂元素Pd，各组分的质量含量分别为Bi63.9％、In31％、Hg5％、Pd0.1％。
实施例2
一种BiInHg汞齐，含有Bi、In、Hg和掺杂元素Cu，各组分的质量含量分别为Bi60.5％、In31.5％、Hg4.5％、Cu3.5％。
实施例3
一种BiInHg汞齐，含有Bi、In、Hg和掺杂元素Mn，各组分的质量含量分别为Bi68％、In28％、Hg3.5％、Mn0.5％。
实施例4
一种BiInHg汞齐，含有Bi、In、Hg、掺杂元素Zn和Ag，各组分的质量含量分别为Bi60％、In35％、Hg3.5％、Zn0.5％、Ag1％。
实施例5
一种BiInHg汞齐，含有Bi、In、Hg、和掺杂元素Ni，各组分的质量含量分别为Bi68.2％、In25％、Hg6％、Ni0.8％。
实施例6
一种BiInHg汞齐，含有Bi、In、Hg、掺杂元素Ir和Pd，各组分的质量含量分别为Bi69％、In25％、Hg3％、Ir1.2％、Pd1.8％。
实施例7
一种BiInHg汞齐，含有Bi、In、Hg、掺杂元素Zn和Ir，各组分的质量含量分别为Bi66％、In30％、Hg3％、Zn0.8％、Ir0.2％。
实施例8
一种BiInHg汞齐，含有Bi、In、Hg、掺杂元素Pt和Pd，各组分的质量含量分别为Bi70％、In25％、Hg4.5％、Pt0.2％、Pd0.3％。
实施例9
一种BiInHg汞齐，含有Bi、In、Hg、掺杂元素Ag、Pt和Pd，各组分的质量含量分别为Bi60％、In31％、Hg8％、Ag0.5％、Pt0.2％、Pd0.3％。
上述各实施例中的汞齐常温下表面无汞淅出，无粘连，可应用于制造节能灯和荧光灯。
本发明并不局限于上述实施例，掺杂元素为Pt、Ir、Pd、Rh、Cu、Ag、Au、Zn、Ni、Mn、Fe、Co、Ti中的一种或多种，其质量含量为0.1％-3.5％，均可获得常温下呈固态的汞齐。
Claims (1)
1、一种改进的BiInHg汞齐，含有Bi、In、Hg，其中Bi、In、Hg质量含量分别为60％-68％、28％-35％、3％-8％，该汞齐中还含有质量含量为0.1％-3.5％的掺杂元素，所述掺杂元素为Pt、Ir、Pd、Rh、Cu、Ag、Au、Zn、Ni、Mn、Fe、Co、Ti中的至少一种。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101229841A CN100428398C (zh) | 2005-12-09 | 2005-12-09 | 一种改进的BiInHg汞齐 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101229841A CN100428398C (zh) | 2005-12-09 | 2005-12-09 | 一种改进的BiInHg汞齐 |
Publications (2)
| Publication Number | Publication Date |
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| CN1776882A CN1776882A (zh) | 2006-05-24 |
| CN100428398C true CN100428398C (zh) | 2008-10-22 |
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| CNB2005101229841A Expired - Fee Related CN100428398C (zh) | 2005-12-09 | 2005-12-09 | 一种改进的BiInHg汞齐 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITMI20112111A1 (it) * | 2011-11-21 | 2013-05-22 | Getters Spa | Lampada contenente un'amalgama di partenza migliorata |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4157485A (en) * | 1975-06-20 | 1979-06-05 | U.S. Philips Corporation | Low-pressure mercury vapor discharge lamp with indium-bismuth-mercury amalgam |
| US5225157A (en) * | 1989-07-19 | 1993-07-06 | Microelectronics And Computer Technology Corporation | Amalgam composition for room temperature bonding |
| WO2002097858A1 (en) * | 2001-05-25 | 2002-12-05 | Advanced Lighting Technologies, Inc. | Materials and methods for mercury vapor pressure control in discharge devices |
-
2005
- 2005-12-09 CN CNB2005101229841A patent/CN100428398C/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4157485A (en) * | 1975-06-20 | 1979-06-05 | U.S. Philips Corporation | Low-pressure mercury vapor discharge lamp with indium-bismuth-mercury amalgam |
| US5225157A (en) * | 1989-07-19 | 1993-07-06 | Microelectronics And Computer Technology Corporation | Amalgam composition for room temperature bonding |
| WO2002097858A1 (en) * | 2001-05-25 | 2002-12-05 | Advanced Lighting Technologies, Inc. | Materials and methods for mercury vapor pressure control in discharge devices |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITMI20112111A1 (it) * | 2011-11-21 | 2013-05-22 | Getters Spa | Lampada contenente un'amalgama di partenza migliorata |
| WO2013076631A1 (en) * | 2011-11-21 | 2013-05-30 | Saes Getters S.P.A. | Lamp containing an improved starting amalgam |
| US8823253B1 (en) | 2011-11-21 | 2014-09-02 | Saes Getters S.P.A. | Lamp containing an improved starting amalgam |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1776882A (zh) | 2006-05-24 |
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| ASS | Succession or assignment of patent right |
Owner name: GAOYOU GAOHE OPTO-ELECTRICAL APPLIANCES CO., LTD. Free format text: FORMER OWNER: ZHU SHENGHE Effective date: 20080201 |
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Effective date of registration: 20080201 Address after: Room 2, unit 5, wisteria lane, 303 Sunshine City, Jiangsu, Gaoyou Province, China: 225600 Applicant after: Gaoyou Gao He Photoelectric Equipment Co., Ltd. Address before: Room 302, room 16, 2 lane, Fengzhen Road, Shanghai, Hongkou District: 200000 Applicant before: Zhu Shenghe |
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Assignee: Foshan Ke Wei photoelectric Co., Ltd. Assignor: Gaoyou Gao He Photoelectric Equipment Co., Ltd. Contract fulfillment period: 2008.11.1 to 2014.11.1 contract change Contract record no.: 2009440001286 Denomination of invention: Improved Bi Inllg amalgam Granted publication date: 20081022 License type: Exclusive license Record date: 2009.8.21 |
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Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.11.1 TO 2014.11.1; CHANGE OF CONTRACT Name of requester: FOSHAN COMWIN LIGHT AND ELECTRICITY CO., LTD. Effective date: 20090821 |
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